CN104915558B - MEMS reliability estimation methods - Google Patents
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Abstract
The present invention relates to a kind of MEMS reliability estimation methods, above-mentioned MEMS reliability estimation methods, include the following steps：Obtain cantilever beam crash rate, chip failure rate and the package failure rate of MEMS；Component in MEMS is measured, obtains Oscillating Coefficients, temperature coefficient, temperature amplitude coefficient, the circulation rate coefficient of the MEMS；The reliability of the assessment models acquisition MEMS of setting is substituted into according to the cantilever beam crash rate, chip failure rate, package failure rate, Oscillating Coefficients, temperature coefficient, temperature amplitude coefficient, circulation rate coefficient.MEMS reliability estimation methods provided by the invention, by the cantilever beam crash rate, chip failure rate and package failure rate that obtain MEMS；And the component in MEMS is measured, obtain Oscillating Coefficients, temperature coefficient, temperature amplitude coefficient, the circulation rate coefficient of the MEMS, the reliability of MEMS is further assessed, the assessment of MEMS reliabilities is needed not move through by a large number of experiments, the efficiency of assessment can be effectively improved.
Description
Technical field
The present invention relates to integrated system assessment technology field, more particularly to a kind of MEMS reliability estimation methods.
Background technology
MEMS (Micro-Electro-Mechanical System, microelectromechanical systems) combine electronics, machinery or
Other (magnetic, liquid and heat etc.) elements, generally use conventional semiconductors batch process technology manufacture, its characteristic size is across micro-
Rice and two small fields of adjoining of nanometer, not only with being miniaturized, is inexpensive, is integrated, is low in energy consumption in general sense, performance
The features such as excellent, also acquire a special sense on high sensitivity sensing etc. excellent properties.Continuous with technical merit breaks through, mesh
Before, MEMS product has been widely used in each field.
The advantages of MEMS product is incomparable makes it in modern weapons equipment build-up, especially military equipment it is information-based with
Highly important critical support effect is played in information weapon equipmentization.In recent years, the Military Application of MEMS product is mainly concentrated
：(ammunition guides and individual soldier leads for micro electronmechanical command control system (safety of weapons, insurance and igniting), minitype inertial guidance system
The on piece inertial navigation of boat), it is miniature space attitude determination and control system (guided missile, minitype spacecraft, aircraft etc.), miniature
In the equipment such as power, Miniaturized Communications, just so, go out to require MEMS performance functions advanced outer, its reliability it is also proposed
Higher requirement.Therefore, reliability prediction is carried out to MEMS product to be just particularly important.
Currently, the external reliability estimation method for MEMS product is still based on reliability test, such as：U.S. sandia
Laboratory utilizes SHiMMer test platforms, drives 870 MEMS product failures, and fail data is fitted to Weibull distribution
Accumulative failure curve is drawn by variable of integration period with log series model function, so that it is determined that the service life of MEMS product.
MEMS industrial organizations mechanism carries out MEMS product the reliability index that quantitative accelerated life test (QALT) obtains MEMS product.
Method company as one wishes of foreign countries etc., obtains the reliability indexs such as MEMS service lifes by reliability test, but by a large number of experiments into
Row MEMS reliability assessments may cause the efficiency of related evaluation low.
The content of the invention
Based on this, it is necessary to for the low technical problem of assessment efficiency in the prior art, there is provided a kind of MEMS reliabilities are commented
Estimate method.
A kind of MEMS reliability estimation methods, include the following steps：
Obtain cantilever beam crash rate, chip failure rate and the package failure rate of MEMS；
Component in MEMS is measured, obtains the Oscillating Coefficients, temperature coefficient, temperature amplitude system of the MEMS
Number, circulation rate coefficient；
According to the cantilever beam crash rate, chip failure rate, package failure rate, Oscillating Coefficients, temperature coefficient, temperature amplitude
Coefficient, circulation rate coefficient substitute into the reliability of the assessment models acquisition MEMS of setting.
Above-mentioned MEMS reliability estimation methods, by the cantilever beam crash rate, chip failure rate and encapsulation that obtain MEMS
Crash rate；And the component in MEMS is measured, obtain the Oscillating Coefficients, temperature coefficient, temperature amplitude system of the MEMS
Number, circulation rate coefficient, further assess the reliability of MEMS, the assessment of MEMS reliabilities is needed not move through by a large number of experiments,
The efficiency of assessment can be effectively improved.
Brief description of the drawings
Fig. 1 is the MEMS reliability estimation method flow charts of one embodiment.
Embodiment
The embodiment of MEMS reliability estimation methods provided by the invention is retouched in detail below in conjunction with the accompanying drawings
State.
With reference to figure 1, Fig. 1 show the MEMS reliability estimation method flow charts of one embodiment, includes the following steps：
S10, obtains the cantilever beam crash rate, chip failure rate and package failure rate of MEMS；
In above-mentioned steps S10, cantilever beam crash rate, chip failure rate and the package failure rate of MEMS can pass through MEMS
Acquired in the local test test of appropriate section.
S20, measures the component in MEMS, obtains the Oscillating Coefficients, temperature coefficient, temperature amplitude of the MEMS
Coefficient, circulation rate coefficient；
In one embodiment, the measurement process of above-mentioned temperature coefficient can include：
According to the circuit package base temperature of MEMS, the first Thermal Stress Coefficient is measured；
According to the maximum temperature in MEMS package, second temperature stress coefficient is measured；
The temperature coefficient of MEMS is determined according to the first Thermal Stress Coefficient, second temperature stress coefficient.
In the present embodiment, under different temperature condition, the first measured Thermal Stress Coefficient πT1, second temperature stress system
Number πT2, can be as shown in table 1, measure under different temperature condition, the first Thermal Stress Coefficient π of MEMST1, second temperature should
Force coefficient πT2Afterwards, can be by the first whole Thermal Stress Coefficient πT1, second temperature stress coefficient πT2Average with true
Determine the temperature coefficient of MEMS, in table 1, T represents temperature, and unit is degree Celsius (DEG C).
1 first Thermal Stress Coefficient π of tableT1, second temperature stress coefficient πT2Measurement table
| T/℃ | πT1 | πT2 | T/℃ | πT1 | πT2 |
| 35 | 0.81 | 0.31 | 110 | 7.11 | 3.41 |
| 40 | 0.97 | 0.37 | 115 | 7.97 | 3.87 |
| 45 | 1.15 | 0.45 | 120 | 8.91 | 4.39 |
| 50 | 1.36 | 0.54 | 125 | 9.94 | 4.95 |
| 55 | 1.60 | 0.65 | 130 | - | 5.57 |
| 60 | 1.87 | 0.77 | 135 | - | 6.26 |
| 65 | 2.17 | 0.91 | 140 | - | 7.00 |
| 70 | 2.52 | 1.07 | 145 | - | 7.81 |
| 75 | 2.90 | 1.26 | 150 | - | 8.70 |
| 80 | 3.33 | 1.47 | 155 | - | 9.66 |
| 85 | 3.82 | 1.71 | 160 | - | 10.70 |
| 90 | 4.35 | 1.98 | 165 | - | 11.83 |
| 95 | 4.94 | 2.28 | 170 | - | 13.04 |
| 100 | 5.60 | 2.61 | 175 | - | 14.35 |
| 105 | 6.32 | 2.99 | - | - | - |
In one embodiment, the measurement process of above-mentioned circulation rate coefficient can include：
The temperature cycle times of MEMS inner setting times are obtained, cycling rate system is determined according to the temperature cycle times
Number.
The temperature cycle times of above-mentioned MEMS inner settings time can be read from the specification of MEMS, ordinary circumstance
Under, above-mentioned setting time could be provided as 1 year.
S30, according to the cantilever beam crash rate, chip failure rate, package failure rate, Oscillating Coefficients, temperature coefficient, temperature
Amplitude coefficient, circulation rate coefficient substitute into the reliability of the assessment models acquisition MEMS of setting.
In one embodiment, the assessment models of above-mentioned setting can be：λP=λxblπv+λchipπT+λpackageπΔTπN, its
In, λPRepresent the reliability prediction crash rate of MEMS, λxblRepresent cantilever beam crash rate, πvRepresent Oscillating Coefficients；λchipRepresent core
Piece basic failure rate, πTRepresent temperature coefficient, λpackageRepresent package failure rate, πΔTRepresent warm luffing value coefficient, πNExpression follows
Ring rate coefficient.
MEMS reliability estimation methods provided in this embodiment, by the cantilever beam crash rate, the chip failure that obtain MEMS
Rate and package failure rate；And the component in MEMS is measured, obtain the Oscillating Coefficients of the MEMS, temperature coefficient,
Temperature amplitude coefficient, circulation rate coefficient, further assess the reliability of MEMS, need not move through the assessment of MEMS reliabilities and pass through
A large number of experiments, can effectively improve the efficiency of assessment.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, its description is more specific and detailed, but simultaneously
Cannot therefore it be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (3)
1. a kind of MEMS reliability estimation methods, it is characterised in that include the following steps：
Obtain cantilever beam crash rate, chip failure rate and the package failure rate of MEMS；
Component in MEMS is measured, the Oscillating Coefficients of the MEMS, temperature coefficient is obtained, temperature amplitude coefficient, follows
Ring rate coefficient；
According to the cantilever beam crash rate, chip failure rate, package failure rate, Oscillating Coefficients, temperature coefficient, temperature amplitude system
Number, circulation rate coefficient substitute into the reliability of the assessment models acquisition MEMS of setting；The assessment models set as：λP=λxblπv
+λchipπT+λpackageπΔTπN, wherein, λPRepresent the reliability prediction crash rate of MEMS, λxblRepresent cantilever beam crash rate, πvTable
Show Oscillating Coefficients；λchipRepresent chip basic failure rate, πTRepresent temperature coefficient, λpackageRepresent package failure rate, πΔTRepresent
Warm luffing value coefficient, πNRepresent circulation rate coefficient.
2. MEMS reliability estimation methods according to claim 1, it is characterised in that the measurement process of the temperature coefficient
Including：
According to the circuit package base temperature of MEMS, the first Thermal Stress Coefficient is measured；
According to the maximum temperature in MEMS package, second temperature stress coefficient is measured；
After measuring the first Thermal Stress Coefficient of MEMS under different temperature condition, second temperature stress coefficient, by whole
The first Thermal Stress Coefficient, second temperature stress coefficient average with determine MEMS temperature coefficient.
3. MEMS reliability estimation methods according to claim 1, it is characterised in that the measurement of the circulation rate coefficient
Journey includes：
The temperature cycle times of MEMS inner setting times are obtained, circulation rate coefficient is determined according to the temperature cycle times.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102945315A (en) * | 2012-10-25 | 2013-02-27 | 华北电力大学 | Fully-digital relay protection reliability system based on software failure and human failure, and evaluation method of system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102945315A (en) * | 2012-10-25 | 2013-02-27 | 华北电力大学 | Fully-digital relay protection reliability system based on software failure and human failure, and evaluation method of system |
Non-Patent Citations (2)
| Title |
|---|
| A Reliability Methodology for Electronic Systems;FIDES Group;《FIDES Guide 2004 issue》;20041231;第68-70页 * |
| 电子设备可靠性预计手册;中国人民解放军总装备部;《中华人民共和国国家军用标准 GJB/Z 299C-2006》;20070101;第14-15页 * |
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