CN104900737B - The thin-film solar cells of spelling formula can be cut - Google Patents
The thin-film solar cells of spelling formula can be cut Download PDFInfo
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- CN104900737B CN104900737B CN201510318730.0A CN201510318730A CN104900737B CN 104900737 B CN104900737 B CN 104900737B CN 201510318730 A CN201510318730 A CN 201510318730A CN 104900737 B CN104900737 B CN 104900737B
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- thin
- film
- battery
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- cut
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- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010408 film Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000005520 cutting process Methods 0.000 claims abstract description 9
- 239000000178 monomer Substances 0.000 claims abstract description 9
- 239000004642 Polyimide Substances 0.000 claims abstract description 5
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims abstract description 5
- 229920001721 polyimide Polymers 0.000 claims abstract description 5
- 238000002485 combustion reaction Methods 0.000 claims abstract description 3
- 239000003960 organic solvent Substances 0.000 claims abstract description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 101000651021 Homo sapiens Splicing factor, arginine/serine-rich 19 Proteins 0.000 abstract description 2
- 102100027779 Splicing factor, arginine/serine-rich 19 Human genes 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 description 49
- 238000005516 engineering process Methods 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000010248 power generation Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 210000003850 cellular structure Anatomy 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention discloses a kind of thin-film solar cells for cutting spelling formula, battery is using polyimides as flexible substrate material, Kapton high temperature resistant, without organic solvent, infusibility, resistance to combustion, also fabulous radioresistance, dimensional stability, excellent tension failure and the mechanical performance such as lightweight, battery has physical characteristics that are rollable, folding, cut, and high gravimetric specific power.Battery employs " SCAF " (perforation series connection is formed on film substrate) this originality cascaded structure, the characteristics of freely being cut off by unit with solar cell monomer, not only dimensionally, can flexible design and within output voltage is from the three ten-day period of hot season to the wide scope of hundreds of volts.Give full play to these features, can develop with it is lightweight, can wind feature carry power supply.
Description
Technical field
The present invention relates to a kind of thin-film solar cells, more particularly to a kind of thin-film solar cells for cutting spelling formula.
Background technology
Photovoltaic industry just progressively moves towards technology diversification, and crystal silicon, film, the game of light condensing technology are no longer limited to cost
Compare with, each technology can open up a market space in respective advantageous field of application.
Meet following huge electric power and energy demand, while be sufficiently minimized cost, silicon-base thin-film battery technology without
It is suspected to be real promising developing direction, and the industrialization technology of microcrystal silicon, polysilicon thin-film solar battery is still remote immature, because
This current amorphous silicon film solar battery is optimal developing direction, and flexible amorphous silicon thin-film solar cell is also undoubtedly flexible electrical
Developing direction optimal at present in pond.
And monocrystaline silicon solar cell, thin-film solar cells also has some shortcomings.One is short life, in light not
Can occur so-called Staebler-Wronski effects under disconnected irradiation, electricity conversion can drop to original 25%, this essence
On exactly have the too many defect using dangling bond as representative in non-crystalline silicon, cause structural instability;Two be that electricity conversion compares
Low, monocrystaline silicon solar cell, monomer efficiency is 15%-20%, and (about 1000 is flat for flexible substrate amorphous silicon solar cell component
Square centimetre) efficiency be 10-13%, identical output electricity needed for solar-electricity pool area increase.
Thin-film solar cells for especially suitable to the not high occasion of solar cell floor area requirement, such as rural area and
West area.China still has about up to ten thousand villages, the people in the countryside of up to ten million people ten thousand not to have access to electricity also at present, many You electricity counties and townships
Severe Power Shortage, thin-film solar cells has met meter Xin opportunity to develop.
In future market, the proportion shared by thin-film solar cells will be continuously increased, and thin-film solar cells is ground
Hair will continue to raise speed.The popularization of following BIPV (BIPV) and the policy land of help from government solar cell development
It is continuous to put into effect, the high speed development of China's thin-film solar cells new round will be promoted.
With becoming increasingly conspicuous for energy problem, solar cell photovoltaic power generation technology development in recent years is swift and violent.Polymer substrate
Flexible thin-film solar cell is by its consumptive material is few, cost is low, rollable (flexibility), gravimetric specific power are high, it is light the features such as turn into
The focus of current solar cell research field.
The content of the invention
The present invention is intended to provide a kind of thin-film solar cells for cutting spelling formula.
The thin-film solar cells that spelling formula can be cut uses polyimides as flexible substrate material, the resistance to height of Kapton
Temperature, without organic solvent, infusibility, resistance to combustion, also with fabulous radioresistance, dimensional stability and excellent tension failure etc.
Mechanical performance.The thickness of effective battery device layer of amorphous silicon film solar battery is in the micron order of magnitude, and this give non-crystalline silicon
The characteristics of film layer larger toughness and amount of deflection, fragmentation easy different from body silicon materials, the bending of amorphous silicon membrane appropriateness can't
Too big influence is brought to battery performance.Therefore amorphous silicon membrane is deposited on the backing material of Kapton, battery is just
Possesses the good characteristic that can be bent or even fold, with physical characteristics that are rollable, folding, cut.
Due to battery using polyimides as flexible substrate material, backing material is lightweight, substantially increases unit electricity
The power that pond quality is produced, with high gravimetric specific power.Can be light negative in many needs by battery applications using this characteristic
Carry high-power use occasion.By contrast, body silion cell, although the current conversion ratio of glass substrate thin film amorphous silicon solar cell
It is higher, but the weight of the battery required for generation unit power is much bigger.
The thin-film solar cells that spelling formula can be cut employs " SCAF " (on film substrate formed perforation series connection) this is only
Invasive cascaded structure, the characteristics of monomer is freely cut can be pressed with solar cell monomer.Using this feature, not only in size
On, and within output voltage is from the three ten-day period of hot season to the wide scope of hundreds of volts, can flexible design.This feature is given full play to, can be with
The carrying power supply of feature can be wound by developing.
Battery uses cascaded structure, and the structure of battery cell is as shown in Figure 1.Film substrate is using polyimides as substrate
Material;The one side of film substrate is the thin-film device formed by transparency electrode, non-crystalline silicon (α-Si) layer, metal electrode;And film
The another side of substrate then forms backplate.Each free laser in two faces of film substrate makes wiring (patterning
Line) and separate.Being connected in series for cell, employs current collection holes and the class connecting hole of series of holes two.In addition, in thin-film device
Surface, one layer of resin film is covered with comprehensively, to prevent surface damage.
Compared with common power generation application, the power generation performance of low-light (level) is extremely important in industry and product for civilian use purposes.
This is due to that takeup type and portable product are mostly used in the environment of sunshine condition rather harsh, also at the cloudy day
Seek a certain degree of power generation performance.Thin-film solar cells and crystal silicon solar batteries generating efficiency drop under 1KW/m2 illumination
It is low, 0.1~0.2KW/m2 illumination area thin-film solar cells power generation performance than crystal silicon solar batteries improve 10% or so.
The thin-film solar cells of spelling formula can be cut using battery cell as the basic demand applied and combine client, weight is given full play to
Gently, these high features of rollable, flexibility ratio, exploitation has unique products that are lightweight, can winding feature.Product can be used in agriculture
Village and west area are to floor area requirement is not high and electricity consumption is deficient region;Apply to industrial products field simultaneously, such as too
Positive energy aircraft, solar telephone;Further it is widely used in civilian place and the product for civilian use, such as solar energy clothes, sleeping bag, hand
Table, calculator, curtain, and building roof and metope.The thin-film solar cells of spelling formula can be cut because its preparation technology is relative
Simply, material is relatively cheap, possesses low-cost advantage, can be with large-scale production, with very big capability of industrialization.
Brief description of the drawings
Fig. 1 is battery cell structure chart.
In figure:1- element cell monomers;2- transparency electrodes;3- amorphous silicon layers;4- metal electrodes;5- film substrates;6- is carried on the back
Face electrode;7- makes wiring route;8- current collection holes;9- is connected in series hole.
Fig. 2 is that battery module reconstructs figure.
In figure:10th, 10W battery cells;11st, 5W battery cells;12nd, 10W battery modules.
Embodiment
Solar cell can develop into 2.5W and 10W cell, and other specifications can also be developed as needed
Cell.
Table 1:The parameter of solar battery cell
Based on the design of above cell, this is estimable with that freely can reconstruct voltage for solar cell
Feature, be free to constitute new module, is combined into the solar cell of big voltage, and be that one kind can cut spelling formula solar energy
Battery unit, combination is flexible, spelling is cut conveniently, the need for disclosure satisfy that a variety of application places.Module is reconstructed such as Fig. 2.First, it is electric
The voltage of 1 series connection cell is 1.17V in pond, the need for purposes, determines the serial number of solar cell monomer.Its
It is secondary, battery cell is cut along back side electroplax, the battery cell series connection hop count after now cutting is n, and backplate number is m,
Then n=m-1.Battery cell after cutting is connected in parallel using electric conductivity tape as required, with resin seal, is consequently formed mould
Block.Table 2 provides 10W battery cells and can cut the comparison of the 10W modules of spelling formula solar battery cell, is found, can cut by contrasting
Spelling formula battery module, relative to normal cell monomer, is low-voltage, the battery component of high current type constituted again.
Table 2:Battery cell is contrasted with modular structure
Title | 10W monomers | 10W modules |
Structure | 30 series connection x2 are in parallel | 15 series connection x4 are in parallel |
Rated maximum power (W) | 10.12 | 10.12 |
Loaded load voltage (V) | 35.1 | 17.55 |
Nominal load current (A) | 0.288 | 0.576 |
Short circuit current flow (A) | 0.379 | 0.758 |
Open-circuit voltage (V) | 47.8 | 23.9 |
Because the train of modules such as cutting and conductive strips distribution are turned into industry, it can be carried out from backplate side, therefore, realize mould
Blocking structure has very strong operability.
Claims (3)
1. a kind of thin-film solar cells for cutting spelling formula, including transparency electrode, amorphous silicon layer, metal electrode, film substrate, the back of the body
Face electrode, make wiring route, current collection holes, be connected in series hole, it is characterised in that:Film substrate is using polyimides as substrate
Material, amorphous silicon membrane is deposited on the backing material of Kapton;The one side of film substrate is by transparency electrode, amorphous
Silicon (α-Si) layer, the thin-film device of metal electrode formation;And the another side of film substrate then forms backplate;Film substrate
Each free laser in two faces makes wiring (patterning line) and separated;Battery, which has, can freely reconstruct voltage
The characteristics of, monomer can be pressed and freely cut, be free to constitute new battery module, be combined into the solar cell of big voltage,
It is that one kind can cut spelling formula thin-film solar cells.
2. a kind of thin-film solar cells for cutting spelling formula according to claim 1, it is characterised in that:Kapton
With high temperature resistant, without organic solvent, infusibility, also resistance to combustion, the machinery with radioresistance, dimensional stability and tension failure
Performance;Battery possesses the characteristic that can be bent.
3. a kind of thin-film solar cells for cutting spelling formula according to claim 1, it is characterised in that:Employ " thin
It is attached between the cascaded structure of perforation series connection in ilm substrate ", cell with current collection holes and series of holes, in thin-film device
Surface, is covered with one layer of resin film, to prevent surface damage comprehensively.
Priority Applications (1)
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CN201510318730.0A CN104900737B (en) | 2015-06-12 | 2015-06-12 | The thin-film solar cells of spelling formula can be cut |
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CN201510318730.0A CN104900737B (en) | 2015-06-12 | 2015-06-12 | The thin-film solar cells of spelling formula can be cut |
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CN104900737B true CN104900737B (en) | 2017-09-12 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR102206858B1 (en) * | 2015-09-22 | 2021-01-22 | 코오롱인더스트리 주식회사 | Flexible device, and method for manufacturing the same |
US10693027B2 (en) * | 2016-01-13 | 2020-06-23 | Alta Devices, Inc. | Method for interconnecting solar cells |
CN105576050B (en) * | 2016-04-06 | 2018-02-13 | 江西共青城汉能薄膜太阳能有限公司 | A kind of flexible solar battery pack and preparation method thereof |
CN209104165U (en) * | 2018-11-19 | 2019-07-12 | 上海质卫环保科技有限公司 | Solar battery sheet and solar cell module |
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CN101483204B (en) * | 2009-02-13 | 2012-09-19 | 苏州富能技术有限公司 | Thin-film solar cell module in series parallel connection structure and processing method thereof |
EP2573821A4 (en) * | 2010-05-21 | 2014-03-19 | Fuji Electric Co Ltd | Thin film solar cell |
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