CN104900628B - A kind of vertical interconnecting structure with electromagnet shield effect and preparation method thereof - Google Patents
A kind of vertical interconnecting structure with electromagnet shield effect and preparation method thereof Download PDFInfo
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- CN104900628B CN104900628B CN201510348146.XA CN201510348146A CN104900628B CN 104900628 B CN104900628 B CN 104900628B CN 201510348146 A CN201510348146 A CN 201510348146A CN 104900628 B CN104900628 B CN 104900628B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a kind of vertical interconnecting structure with electromagnet shield effect and preparation method thereof, the structure includes：Solid metal through post, metal screen layer and metal oxide；Wherein：Solid metal through post is the metallic conductor of any interlayer perpendicular interconnection in package substrate；Metal screen layer is the endless metal screen layer for surrounding solid metal through post；Annular dielectric of the metal oxide between solid metal through post and metal screen layer.This method includes：First time photoetching on a substrate lower surface formed vertical interconnecting structure graphic mask；Carry out dense form anodic oxidation；The graphic mask of vertical interconnecting structure is removed, second of photoetching forms the graphic mask of solid metal through post and the graphic mask of metal screen layer in substrate upper and lower surface；Carry out penetrating type anodic oxidation；Remove the graphic mask of solid metal through post and the graphic mask of metal screen layer.Vertical interconnecting structure of the present invention and preparation method thereof, efficiently solves the problems, such as electromagnetic leakage.
Description
Technical field
The present invention relates to Electronic Packaging field, more particularly to a kind of vertical interconnecting structure with electromagnet shield effect and its
Preparation method.
Background technology
As electronic system continues to develop towards high frequency, high speed, multi-functional, miniaturization, encapsulation interconnection increasingly into
The bottleneck that can be improved for systematic entirety.Vertical interconnecting structure in particularly encapsulating, is resistance important in signal transmission path
Anti- discontinuity point, it is root caused by the problems of Signal Integrity such as reflection, ring, loss, crosstalk.Due to existing processing method
Limitation, current substrate process do not make the shielding construction of perpendicular interconnection.Can be direct by the electromagnetic wave of vertical interconnecting structure
It is coupled to power supply ground level, the temporal synchronization switching noise/ground bounce noise formed in power distribution network, causes power supply ground level
Voltage pulsation, not only influence the level switching of high speed signal, or even cause the resonance of encapsulating structure, cause the failure of product.
At present, the signal quality of perpendicular interconnection is improved using the method at the surrounding of perpendicular interconnection increase ground vias more
And suppress the noise radiation of perpendicular interconnection.But this method considerably increases the layout area of perpendicular interconnection, and can not shield completely
Cover the electromagnetic radiation of perpendicular interconnection.
Patent on perpendicular interconnection is a lot, such as US6893951B2, CN102024801A, CN102437110A, but this
A little structures are mainly used in the perpendicular interconnection of IC chip internal element, it is impossible to vertical interconnecting structure accomplished on substrate,
And do not consider the shielding properties of interconnection.The patent of invention of 2013 applications《A kind of preparation method of coaxial vertical interconnection conductor》
（Application number 201310280690.6）In propose using etching, deposition, plating the methods of made coaxial vertical interconnection structure,
But this method cost is high, and this process only for silicon, sheet glass or other organic materials, i.e., it is applicable
In insulating materials, conductive metallic material is not suitable for.
The content of the invention
The present invention is directed to above-mentioned problems of the prior art, proposes a kind of perpendicular interconnection with capability of electromagnetic shielding
Structure and preparation method thereof, effectively solves the problems, such as electromagnetic leakage existing for existing vertical interconnecting structure.
In order to solve the above technical problems, the present invention is achieved through the following technical solutions：
The present invention provides a kind of vertical interconnecting structure with capability of electromagnetic shielding, and it includes：Solid metal through post, metal
Screen layer and metal oxide；Wherein：
The solid metal through post is the metallic conductor of any interlayer perpendicular interconnection in package substrate；
The metal screen layer is the endless metal screen layer for surrounding the solid metal through post；
Annular dielectric of the metal oxide between the solid metal through post and the metal screen layer.
It is preferred that the material of the material of the solid metal through post and the metal screen layer is same metal material；
The metal material for can anodic oxidation metal material.
It is preferred that the metal oxide that the metal oxide annular medium is formed after being oxidized for the metal material.
Solid metal through post and metal screen layer are same metal material, and metal oxide layer is aoxidized by metal material and formed, structure
Simply, it is easy to make.
It is preferred that the metal material is any one in niobium, tantalum, aluminium, titanium, accordingly,
The metal oxide is any one in niobium oxide, tantalum oxide, aluminum oxide, titanium oxide.
It is preferred that the vertical interconnecting structure is single channel vertical interconnecting structure and/or multichannel interconnection structure and/or difference
Divide vertical interconnecting structure；
Single channel vertical interconnecting structure is used for the transmission of individual signals；
Multichannel interconnection structure is used for the transmission of multiple adjacent signals, and each passage is provided with the metallic shield
Layer, the metal screen layer between two neighboring passage shares, to reduce substrate wiring space.
Differential vertical interconnection structure is used for the transmission of differential signal.
It is preferred that the size of the vertical interconnecting structure is micron order, the perpendicular interconnection knot that existing preparation method makes
It is at least grade that structure, which is, and vertical interconnecting structure of the invention can reach micron order, realizes the perpendicular interconnection of small size, is applied to
The lead of thin space is directly connected to.
The present invention also provides a kind of preparation method of the vertical interconnecting structure with capability of electromagnetic shielding, and it includes following step
Suddenly：
S11：One metal substrate is provided, one layer of light-sensitive material is coated for the first time in the upper and lower surface of the metal substrate, enters
Row first time dual surface lithography, form the graphic mask of vertical interconnecting structure；
S12：By formed vertical interconnecting structure graphic mask after metal substrate carry out dense form anodic oxidation, not by
The region of the graphic mask covering of vertical interconnecting structure forms dense form metal oxide layer；；
S13：The graphic mask of vertical interconnecting structure is removed, it is photosensitive in second of one layer of coating of upper and lower surface of metal substrate
Material, second of dual surface lithography is carried out, form the graphic mask of solid metal through post and metal screen layer；
S14：Metal substrate after the graphic mask of the graphic mask for forming solid metal through post and metal screen layer is entered
Row penetrating type anodic oxidation；
S15：Remove the graphic mask of solid metal through post and the graphic mask of metal screen layer.
It is preferred that S16：Surface metalation processing is carried out to solid metal through post, makes vertical interconnecting structure can be with high density
Planar transmission line, gold thread, salient point, soldered ball etc. be directly connected to.
It is preferred that electrolyte used in dense form anodic oxidation in the step S12 is faintly acid electrolyte；
Electrolyte used in penetrating type anodic oxidation in the step S14 is acidic electrolysis bath.
Compared to prior art, the present invention has advantages below：
（1）Vertical interconnecting structure provided by the invention with electromagnet shield effect and preparation method thereof, in solid metal
The outside of through post sets metal screen layer to be grounded, and efficiently solves the electromagnetic exposure problem of perpendicular interconnection in encapsulating structure；
（2）Using the preparation method of the present invention, vertical interconnecting structure can be fabricated on substrate, substrate uses metal material
Material, good heat dissipation effect；
（3）The solid metal through post of the present invention can directly connect with highdensity planar transmission line, gold thread, salient point, soldered ball etc.
Connect；
（4）The preparation method of the present invention, makes interconnection structure using photoetching technique on metallic substrates, and size can reach
Very little, much smaller than traditional coaxial connector；
（5）Interconnection, gold thread and the package substrate that the vertical interconnecting structure of the present invention can be used between package substrate random layer
Interconnection and flipchip bump and package substrate interconnection etc..
Certainly, any product for implementing the present invention it is not absolutely required to reach all the above advantage simultaneously.
Brief description of the drawings
Embodiments of the present invention are described further below in conjunction with the accompanying drawings：
Fig. 1 is the sectional view of the vertical interconnecting structure of embodiments of the invention 1；
Fig. 2 is the top view of the vertical interconnecting structure of embodiments of the invention 1；
Fig. 3 is the application schematic diagram of the vertical interconnecting structure of embodiments of the invention 1；
Fig. 4 is isolation comparison diagram of the vertical interconnecting structure with existing vertical interconnecting structure of embodiments of the invention 1；
Fig. 5 is the flow chart of the preparation method of the vertical interconnecting structure of embodiments of the invention 2；
Fig. 6 A are the metal substrate schematic diagram after the step S11 of embodiments of the invention 2；
Fig. 6 B are the metal substrate schematic diagram after the step S12 of embodiments of the invention 2；
Fig. 6 C are the metal substrate schematic diagram after the step S13 of embodiments of the invention 2；
Fig. 6 D are the metal substrate schematic diagram after the step S14 of embodiments of the invention 2；
Fig. 6 E are the metal substrate schematic diagram after the step S15 of embodiments of the invention 2.
Label declaration：1- metal substrates, 2- single channel vertical interconnecting structures, 3- multichannel vertical interconnecting structures, 4- difference
Vertical interconnecting structure；
The graphic mask of 11- vertical interconnecting structures, 12- dense form metal oxide layers, the figure of 13- solid metal through posts are covered
Film, the graphic mask of 14- metal screen layers；
101- solid metal through posts, 102- metal screen layers, 103- metal oxides；
111- gold threads, 112- soldered balls, 113- chips.
Embodiment
Embodiments of the invention are elaborated below, the present embodiment is carried out lower premised on technical solution of the present invention
Implement, give detailed embodiment and specific operating process, but protection scope of the present invention is not limited to following implementation
Example.
Embodiment 1：
With reference to Fig. 1-Fig. 4, the vertical interconnecting structure with electromagnet shield effect of the present invention is described in detail in the present embodiment, can
With including any one in single channel vertical interconnecting structure 2, multichannel vertical interconnecting structure 3, differential vertical interconnection structure or
A variety of, the present embodiment is with including 2, multichannel vertical interconnecting structures 3 of a single channel vertical interconnecting structure and a difference
Exemplified by vertical interconnecting structure 4, its structural representation as shown in figure 1, top view as shown in Fig. 2 single channel vertical interconnecting structure 2 wraps
Include solid metal through post 101, be enclosed in solid metal through post 21 outside annular metal screen layer 102, and positioned at reality
Annular dielectric metal oxide 103 between heart metal through post 101 and metal screen layer 102；Multichannel perpendicular interconnection
Structure 3 includes multiple solid metal through posts 101, and exemplified by this sentences three, the outside of each solid metal through post 101 is both provided with
Its coaxial annular metal screen layer 102 is surrounded, is both provided between each solid metal through post 101 and metal screen layer 102
The dielectric metal oxide 103 of annular, the metal screen layer 102 of the adjacent edge of two neighboring solid metal through post 101 can
Share；Differential vertical interconnection structure includes multiple solid metal through posts 101, exemplified by this sentences two, with an oval gold
Belong to screen layer 102 and surround two solid metal through posts 101, the periphery of each solid metal through post 101 is both provided with metal oxidation
Thing 103.
In the present embodiment, solid metal through post 101 and metal screen layer 102 are identical metal material, metal oxide
103 be the metal oxide formed after this metal material aoxidizes；Lead between the metal screen layer of two neighboring vertical interconnecting structure
This metal material is crossed to be connected.
The application schematic diagram of the vertical interconnecting structure of the present embodiment is illustrated in figure 3, the vertical interconnecting structure is used for gold thread
111 with the interconnection of package substrate, soldered ball 112 and package substrate, one end of gold thread 111 is connected in solid metal through post 101, another
End is connected with chip 113；One end connection solid metal through post 101 of soldered ball 112, other end connection chip 113.
It is illustrated in figure 4 the vertical interconnecting structure with electromagnet shield effect of the present embodiment and existing unshielded efficiency
Vertical interconnecting structure isolation comparison diagram, the first isolation is the vertical interconnecting structure of existing unshielded efficiency in figure
Isolation, the second isolation is the isolation of the vertical interconnecting structure with electromagnet shield effect of the present embodiment, from figure
Go out, after the vertical interconnecting structure with electromagnet shield effect of the present embodiment, isolation adds 60dB, efficiently solves
Electromagnetic leakage problem.
In different embodiments, vertical interconnecting structure, which differs, is set to three, not necessarily includes single channel perpendicular interconnection knot simultaneously
Structure 2, multichannel vertical interconnecting structure 3 and differential vertical interconnection structure 4, can only include it is therein a kind of or it is any two kinds or
It is a variety of, it can arbitrarily arrange, set as needed.
In preferred embodiment, metal material is niobium used by solid metal through post 101 and metal screen layer 102（Nb）、
Tantalum（Ta）, aluminium（Al）, titanium（Ti）In any one, accordingly, the metal oxide 23 for aoxidizing formation is niobium oxide（Nb2O5）、
Tantalum oxide（Ta2O5）, aluminum oxide（Al2O3）, titanium oxide（TiO）In any one.
Embodiment 2：
With reference to Fig. 5-Fig. 6, the vertical interconnecting structure with electro-magnetic screen function of the present invention is described in detail in the present embodiment
Preparation method, its flow chart is as shown in figure 5, comprise the following steps：
S11：One metal substrate 1 is provided, one layer of light-sensitive material is coated for the first time in the upper and lower surface of metal substrate 1, carries out
First time dual surface lithography, form the graphic mask 11 of vertical interconnecting structure；
S12：By formed vertical interconnecting structure graphic mask after metal substrate carry out dense form anodic oxidation, not by
The region of the graphic mask covering of vertical interconnecting structure forms dense form metal oxide layer；
S13：The graphic mask of vertical interconnecting structure is removed using chemical etching, ise method, in metal substrate
Upper and lower surface second of coating, one layer of light-sensitive material, carries out second of dual surface lithography, forms solid metal through post and metallic shield
The graphic mask of layer；
S14：Metal substrate after the graphic mask of the graphic mask for forming solid metal through post and metal screen layer is entered
Row penetrating type anodic oxidation；
S15：Using chemical etching, the graphic mask of ise method removal solid metal through post and metal screen layer
Graphic mask.
Wherein：Electrolyte used in dense form anodic oxidation can be the faintly acids such as citric acid, boric acid electricity in step S12
Solve liquid；Electrolyte used in penetrating type anodic oxidation can be the acid such as sulfuric acid, phosphoric acid, chromic acid or oxalic acid in the step S14
Property electrolyte.
In the present embodiment, also include after step S15：
S16：Surface metalation processing is carried out to solid metal through post, surface metalation processing can be surface nickel porpezite work
Skill, deposition UBM layer or turmeric etc., can so make vertical interconnecting structure can with highdensity planar transmission line, gold thread, salient point,
Soldered ball etc. is directly connected to.
During carrying out dense form anodic oxidation, non-perpendicular interconnection structure region, i.e., two adjacent vertical interconnecting structures
Between region metal substrate both sides formed dense form metal oxide layer, carry out penetrating type anodic oxidation during, not
The region covered by the graphic mask of the graphic mask of solid metal through post and metal screen layer starts to aoxidize, by dense form gold
The region of the non-perpendicular interconnection structure of category oxide layer protection is gradually dissolved with penetrating type anode oxidation process, but both not by reality
The graphic mask covering of the graphic mask and metal screen layer of heart metal through post, is not also protected by dense form metal oxide layer
Region first penetrates, and forms annular dielectric metal oxide 23, and when its completion penetrates, metal substrate stops oxidation, therefore,
Non-perpendicular interconnection structure region is that the metal substrate around metal screen layer 22 does not penetrate, by the gold of each vertical interconnecting structure
Category screen layer 22 connect, can common ground play shielding action.
The present embodiment is followed successively by single channel vertical interconnecting structure 2, multichannel hangs down exemplified by making three vertical interconnecting structures
Straight interconnection structure 3, differential vertical interconnection structure 4, are as shown in Figure 6A the schematic diagram of the metal substrate after step S11, three
The region of individual vertical interconnecting structure forms the graphic mask of vertical interconnecting structure respectively；As shown in Figure 6B for after step S12
The structural representation of metal substrate, dense form anodic oxidation is not passed through by the region that the graphic mask of vertical interconnecting structure covers,
Form dense form metal oxide layer 12；It is as shown in Figure 6 C the structural representation of the metal substrate after step S13, is hung down at three
The respective regions of straight interconnection structure form the graphic mask 13 of solid metal through post and the graphic mask 14 of metal oxide respectively；
It is as shown in Figure 6 D the structural representation of the metal substrate after step S14, not by dense form metal oxide layer 12, solid metal
The region that the graphic mask 13 of through post and the graphic mask 14 of metal oxide are protected penetrates, and is formed around solid metal through post
101 metal oxide 103, the region protected by dense form metal oxide layer 12 do not penetrate, make two adjacent perpendicular interconnections
The metal screen layer 102 of structure is connected by metal；The structure for the metal substrate after step S15 is shown as illustrated in fig. 6e
It is intended to, the graphic mask 14 of the graphic mask 13 of solid metal through post and metal oxide is removed, completes perpendicular interconnection knot
The making of structure.
Compared with traditional vertical interconnecting structure made using the methods of etching, deposition, plating, the present invention uses anode
The preparation method of oxidation, vertical interconnecting structure can be fabricated on substrate, and structure is small, size is micron order, Ke Yishi
The miniature vertical interconnection of existing small size, the lead direct interconnection of thin space is applicable to, the salient point connection of thin space can be used for.
Disclosed herein is only the preferred embodiments of the present invention, and this specification is chosen and specifically describes these embodiments, is
It is not limitation of the invention to preferably explain the principle and practical application of the present invention.Any those skilled in the art
The modifications and variations done in the range of specification, it all should fall in the range of the present invention protects.
Claims (8)
- A kind of 1. vertical interconnecting structure with capability of electromagnetic shielding, it is characterised in that including：Solid metal through post, metal screen Cover layer and metal oxide；Wherein：The solid metal through post is the metallic conductor of any interlayer perpendicular interconnection in package substrate；The metal screen layer is the endless metal screen layer for surrounding the solid metal through post；Annular dielectric of the metal oxide between the solid metal through post and the metal screen layer；The material of the solid metal through post and the material of the metal screen layer are same metal material；The metal material for can anodic oxidation metal material.
- 2. vertical interconnecting structure according to claim 1, it is characterised in that the metal oxide annular medium is described The metal oxide that metal material is formed after being oxidized.
- 3. vertical interconnecting structure according to claim 2, it is characterised in that the metal material is in niobium, tantalum, aluminium, titanium Any one, accordingly,The metal oxide is any one in niobium oxide, tantalum oxide, aluminum oxide, titanium oxide.
- 4. vertical interconnecting structure according to claim 1, it is characterised in that the vertical interconnecting structure is that single channel is vertical Interconnection structure and/or multichannel interconnection structure and/or differential vertical interconnection structure；Single channel vertical interconnecting structure is used for the transmission of individual signals；Multichannel interconnection structure is used for the transmission of multiple adjacent signals, and each passage is provided with the metal screen layer, phase The metal screen layer between adjacent two passages shares；Differential vertical interconnection structure is used for the transmission of differential signal.
- 5. vertical interconnecting structure according to claim 1, it is characterised in that the size of the vertical interconnecting structure is micron Level.
- 6. a kind of preparation method of the vertical interconnecting structure with electromagnet shield effect, it is characterised in that comprise the following steps：S11：One metal substrate is provided, one layer of light-sensitive material is coated for the first time in the upper and lower surface of the metal substrate, carries out the Dual surface lithography, form the graphic mask of vertical interconnecting structure；S12：Metal substrate after the graphic mask for forming vertical interconnecting structure is subjected to dense form anodic oxidation, not vertical The region of the graphic mask covering of interconnection structure forms dense form metal oxide layer；S13：The graphic mask of vertical interconnecting structure is removed, in upper and lower surface second of coating, one layer of photosensitive material of metal substrate Material, second of dual surface lithography is carried out, form the graphic mask of solid metal through post and metal screen layer；S14：Metal substrate after the graphic mask of the graphic mask for forming solid metal through post and metal screen layer is worn Saturating type anodic oxidation；S15：Remove the graphic mask of solid metal through post and the graphic mask of metal screen layer.
- 7. preparation method according to claim 6, it is characterised in that also include after the step S15：S16：Surface metalation processing is carried out to solid metal through post.
- 8. preparation method according to claim 6, it is characterised in that the dense form anodic oxidation institute in the step S12 The electrolyte used is faintly acid electrolyte；Electrolyte used in penetrating type anodic oxidation in the step S14 is acidic electrolysis bath.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262477B1 (en) * | 1993-03-19 | 2001-07-17 | Advanced Interconnect Technologies | Ball grid array electronic package |
| CN103199079A (en) * | 2012-05-30 | 2013-07-10 | 珠海越亚封装基板技术股份有限公司 | Multilayer electronic structure with a through-thickness coaxial structure |
| CN204696113U (en) * | 2015-06-23 | 2015-10-07 | 上海航天测控通信研究所 | A kind of vertical interconnecting structure with electromagnet shield effect |
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| JP3982876B2 (en) * | 1997-06-30 | 2007-09-26 | 沖電気工業株式会社 | Surface acoustic wave device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6262477B1 (en) * | 1993-03-19 | 2001-07-17 | Advanced Interconnect Technologies | Ball grid array electronic package |
| CN103199079A (en) * | 2012-05-30 | 2013-07-10 | 珠海越亚封装基板技术股份有限公司 | Multilayer electronic structure with a through-thickness coaxial structure |
| CN204696113U (en) * | 2015-06-23 | 2015-10-07 | 上海航天测控通信研究所 | A kind of vertical interconnecting structure with electromagnet shield effect |
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