CN104900550B - The monitoring domain and monitoring method of grid technology - Google Patents
The monitoring domain and monitoring method of grid technology Download PDFInfo
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- CN104900550B CN104900550B CN201410077173.3A CN201410077173A CN104900550B CN 104900550 B CN104900550 B CN 104900550B CN 201410077173 A CN201410077173 A CN 201410077173A CN 104900550 B CN104900550 B CN 104900550B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The monitoring domain and monitoring method of a kind of grid technology, wherein, the monitoring domain of grid technology includes the first monitoring domain and the second monitoring domain, and the first monitoring domain includes：First substrate；First initial gate；Cover first mask layer on the first initial gate surface；Cover the first pattern transfer layer of the first mask layer surface；Cover the first photoresist layer with the first figure of the first pattern transfer layer surface；Second monitoring domain includes：Second substrate；Second initial gate；The second mask layer with second graph positioned at the second initial gate surface；The second graph transfer layer on the second initial gate surface for covering the second mask layer surface and exposing；Cover the second photoresist layer with the 3rd figure of second graph transfer layer surface.The ADI monitoring results and can that the present invention can obtain grid technology obtains AEI monitoring results, adjusts grid technology in time by ADI monitoring results and AEI monitoring results, improves semiconductor production yield.
Description
Technical field
The present invention relates to field of semiconductor manufacture technology, the monitoring domain of more particularly to a kind of grid technology and monitoring side
Method.
Background technology
Due to the fast development of integrated circuit technique, the integrated level for improving device is a popular tendency.When the collection of device
Into when spending constantly improve, the distance between the size of device and device can synchronously shorten.
With the continuous diminution of device size, the technique for forming device is faced with increasing challenge, for example, with device
The continuous diminution of part size, there is deviation in the gate CDs and alignment feature for easily causing the device to be formed, for example, grid
Tail end pulled back（Shorten）, cause the edge of grid not cover active area all, cause the ability of device control voltage low, and
And cause occur larger leakage current in device.Therefore, in order to improve the performance of device while integrated level is improved, grid are monitored
The characteristic size of pole technical process（CD：Critical Dimension）It is one of particularly important processing step.
The method of existing monitoring feature size has ESEM（CDSEM）Technology and optical measurement（OCD：Optical
Critical Dimension）Technology.It is longer by being monitored the spent time using CDSEM technologies, and with device
The continuous reduction of part characteristic size, the reliability and accuracy of CDSEM technologies have much room for improvement；And it can be avoided using OCD technologies
The problem of CDSEM technologies have, therefore, prior art carry out the monitoring of technique using OCD technologies more, to improve semiconductor life
Produce yield.
However, in the prior art, the characteristic size of grid technology process is monitored in the presence of monitoring knot using OCD technologies
The problem of fruit poor reliability, it is difficult to judge whether grid technology meets technological standards and judge which road work in grid technology
There is deviation in skill step, causes semiconductor production yield low.
The content of the invention
The present invention solves the problems, such as the monitoring domain and the monitoring method that are to provide a kind of grid technology, in grid technology process
In, after being developed monitoring can also perform etching after monitor, by monitoring result after development and etching after monitoring result,
Find the processing step of deviation occur in grid technology in time, so as to adjusting process parameter, improve semiconductor production yield.
To solve the above problems, the invention provides a kind of monitoring domain of grid technology, including the first monitoring domain and
Second monitoring domain, the first monitoring domain include：First substrate；It is covered in the first initial grid of first substrate surface
Pole；It is covered in first mask layer on the first initial gate surface；It is covered in the first figure of the first mask layer surface
Transfer layer；It is covered in the first photoresist layer with the first figure of the first pattern transfer layer surface, first photoresist layer
It is spaced with the first line width and first；The second monitoring domain includes：Second substrate；It is covered in second substrate surface
Second initial gate；The second mask layer with second graph positioned at the second initial gate surface, second mask
Layer has the second line width and the second interval；The the second initial gate table for being covered in the second mask layer surface and exposing
The second graph transfer layer in face；The second photoresist layer with the 3rd figure of the second graph transfer layer surface is covered in,
Second photoresist layer has the 3rd line width and the 3rd interval.
Optionally, the lenth ratio at first line width and the first interval is 1:2 to 1:10；3rd line width and the 3rd
The lenth ratio at interval is 1:2 to 1:10.
Optionally, the length at first interval or the 3rd interval is 50 nanometers to 100 nanometers.
Optionally, the second graph and the 3rd figure are flagpole pattern, and the second graph and the 3rd figure phase
It is mutually parallel.
Optionally, second line width and the length sum at the second interval and the 3rd line width and the length sum at the 3rd interval
It is equal.
Optionally, the lenth ratio of second interval and the second line width is 1:2 to 1:5.
Optionally, the 3rd interval and the position relationship of the second line width are：3rd is located at interval at the top of the second line width,
And the 3rd interval overlapped with the center line of the second line width.
Optionally, the second graph and the 3rd figure are flagpole pattern, and the second graph and the 3rd figure phase
It is mutually vertical.
Optionally, the lenth ratio of second interval and the second line width is 1:2 to 1:10.
Optionally, the length at second interval is 30 nanometers to 100 nanometers.
Optionally, the size of the first monitoring domain and the second monitoring domain is 5 μm of 5 μ m to 150 μm of 150 μ m.
Optionally, first figure is the figure that is not covered by the first photoresist layer, the First Line a width of adjacent the
The distance between one figure, described first at intervals of the first figure width；The second graph is not covered by the second mask layer
The figure of lid, second line width are the distance between adjacent second graph, described second at intervals of second graph width；Institute
The figure for stating the 3rd figure not covered by the second photoresist layer, the 3rd line width are the distance between adjacent 3rd figure,
Described 3rd at intervals of the 3rd figure width.
Optionally, the material of first mask layer and the second mask layer is silicon nitride.
Accordingly, the present invention also provides a kind of monitoring method, including：The monitoring domain of grid technology is provided；Obtain first
Monitoring Data after the development of photoresist layer, as judging whether grid technology meets the reference frame of technological standards；With the second light
Photoresist layer is mask, is sequentially etched second graph transfer layer, the second mask layer and the second initial gate, forms grid, is obtained
Monitoring Data after the etching of grid, as judging whether grid technology meets the reference frame of technological standards.
Optionally, Monitoring Data after Monitoring Data after developing is obtained using optical measuring technique and is etched.
Optionally, forming the processing step of grid includes：Using second photoresist layer as mask, using the first etching work
Until exposing the second mask layer surface, the second graph that being formed has the 3rd figure shifts skill etching second graph transfer layer
Layer；Using the second graph transfer layer with the 3rd figure as mask, it is straight that the second mask layer is etched using the second etching technics
To the second initial gate surface is exposed, the second mask layer with the 3rd figure is formed；Using second mask layer as mask,
Second initial gate is etched using the 3rd etching technics until exposing the second substrate surface, forms grid.
Optionally, after the second mask layer with the 3rd figure is formed, number is monitored after obtaining the etching of the second mask layer
According to.
Optionally, in addition to：Obtain Monitoring Data after the development of the second photoresist layer.
Compared with prior art, technical scheme provided by the invention has advantages below：
The embodiment of the present invention provides a kind of monitoring domain of grid technology, including the first monitoring domain and the second monitoring version
Figure, wherein, the first monitoring domain includes：First substrate；It is covered in the first initial gate of the first substrate surface；It is covered in first
First mask layer on initial gate surface；It is covered in the first pattern transfer layer of the first mask layer surface；It is covered in the first figure
Shift the first photoresist layer with the first figure of layer surface.Monitored after developing to the first monitoring domain, obtain first
The feature dimension data of photoresist layer, judges whether the exposure imaging technique of grid technology meets technological standards.
Second monitoring domain includes：Second substrate；It is covered in the second initial gate of the second substrate surface；It is covered in second
Second mask layer with second graph on initial gate surface；It is covered in the second mask layer surface and expose second
The second graph transfer layer on initial gate surface；It is covered in the second photoetching with the 3rd figure of second graph transfer layer surface
Glue-line.Because the second mask layer has second graph, second graph transfer layer has filling perforation（gap filling）Characteristic, because
To the distance at the top of the second mask layer, less than the first pattern transfer layer top to the first mask layer at the top of this second graph transfer layer
The distance at top, when the second monitoring domain is on semiconductor production line, when the mask layer top of grid technology on production line
When being exposed, it will be also exposed at the top of the second mask layer of the second monitoring domain so that grid work on a production line
When the etching gas of skill change into the etching gas of etching mask layer, the etching gas will also etch the of the second monitoring domain
Two mask layers；Likewise, after the completion of grid technology on production line, the second initial gate of the second monitoring domain is etched completely
Open form is into grid, enabling is monitored after being performed etching to the grid of the second monitoring domain, passes through monitoring after etching and obtain second
The characteristic size and alignment feature of the grid of domain are monitored, so as to which whether the grid for judging to be formed in grid technology on production line accords with
Close technological standards.
Further, second graph and the 3rd figure are orthogonal, most the second initial grid at last in the second monitoring domain
Pole cuts into a section gate patterns so that the quantity of gate patterns is more, and the quantity of figure is more, is supervised after the etching of acquisition
Survey data reliability and accuracy it is higher, more can be true and reliable reflect whether grid technology meets technique mark on production line
It is accurate.
Accordingly, the embodiment of the present invention also provides a kind of monitoring method, and knot is monitored after obtaining the development of the first monitoring domain
Fruit, judges whether exposure imaging technique meets technological standards, and monitoring result is also used as judging grid after the development obtained
There is one of reference frame of deviation in which road processing step of pole technique；After the completion of grid technology, the grid of formation is obtained
Etching after monitoring result, judge whether the grid that ultimately forms meets work by monitoring result after the etching of the second monitoring domain
Skill standard.
Further, after the second mask layer with the 3rd figure is formed, number is monitored after obtaining the etching of the second mask layer
According to using Monitoring Data after the etching as judging whether grid technology meets one of reference frame of technological standards：If etching
Afterwards Monitoring Data deviate technological standards, then explanation etching the second mask layer etch process parameters do not meet technological standards, it is necessary to
Adjustment etch process parameters in time, so as to further improve semiconductor production yield.
Brief description of the drawings
Fig. 1 is the structural representation for the monitoring domain for being used for OCD monitorings that an embodiment provides；
Fig. 2 is the structural representation of the provided in an embodiment of the present invention first monitoring domain；
Fig. 3 and Fig. 4 is the structural representation for the second monitoring domain that one embodiment of the invention provides；
Fig. 5 to Fig. 7 is the structural representation for the second monitoring domain that another embodiment of the present invention provides；
Fig. 8 to Figure 10 is the structural representation that the second monitoring domain provided using an embodiment is monitored process；
Figure 11 to Figure 13 is the structural representation that the second monitoring domain provided using another embodiment is monitored process.
Embodiment
From background technology, prior art is poor to the monitoring reliability of grid technology, it is difficult to whether judges grid technology
There is deviation, cause semiconductor production yield low.
Studied for the characteristic size OCD monitoring methods of grid technology process, the monitoring of grid technology includes development
After monitor（ADI：After Develop Inspection）Monitored with after etching（AEI：After Etch Inspection）,
Wherein, monitoring refers to after development：After forming the photoresist with figure, characteristic size to the photoresist with figure and
The monitoring of alignment feature, monitor after etching and refer to：After the completion of etching technics, to etching formed figure characteristic size with
And the monitoring of alignment feature.By the analysis to ADI Monitoring Datas and AEI Monitoring Datas, it can interpolate that whether grid technology accords with
Close technological standards, and if formed gate CDs do not meet technological standards, by analyzing ADI and AEI monitoring results, judge
There is deviation in which road processing step of grid technology.If ADI monitoring results deviate technological standards, illustrate patterned light
There is deviation, it is necessary to adjust photoresist exposure imaging technological parameter in the formation process of photoresist layer；If AEI monitoring results deviate work
Skill standard, then illustrate that etching technics deviation occurs, it is necessary to adjust etch process parameters in time, to ensure most end form in actual process
Into grid characteristic size and alignment feature meet technological standards, improve semiconductor production yield.
In order to obtain the ADI of grid technology monitorings and AEI Monitoring Datas, as one embodiment, there is provided one kind is used for OCD
The monitoring domain of monitoring, refer to Fig. 1, and monitoring domain includes：Substrate 100, the initial gate 101 positioned at the surface of substrate 100；Position
Mask layer 102 in the surface of initial gate 101, and mask layer 102 includes graphics field I and without graphics field II；Position
Pattern transfer layer 103 in the surface of mask layer 102；Patterned photoresist positioned at the surface of pattern transfer layer 103
Layer 104.
On production line is carried out during grid technology, make above-mentioned monitoring domain with forming the semiconductor of grid on production line
Domain carries out grid technology simultaneously, carries out OCD monitorings to monitoring domain, the characteristic size in monitoring domain is obtained, so as to reflect
Go out whether grid technology on production line meets technological standards.Specifically, carrying out OCD monitorings to the monitoring domain includes ADI prisons
Survey and AEI is monitored：
ADI monitorings are carried out to patterned photoresist layer 104 using OCD technologies, obtain patterned photoresist layer 104
Characteristic size and alignment feature（overlay）, the characteristic size and alignment feature that judge patterned photoresist layer 104 are
It is no to meet technological standards；It is mask with patterned photoresist layer 104, etched features transfer layer 103, by photoresist layer 104
Pattern transfer is to pattern transfer layer 103；It is mask with the patterned pattern transfer layer 103, etching mask layer 102, by light
The pattern transfer of photoresist layer 104 is to mask layer 102, after patterned mask layer 102 is formed, using OCD technologies to graphical
Mask layer 102 carry out AEI monitorings, obtain the characteristic size and alignment feature of patterned mask layer 102；With patterned
Mask layer 102 is mask, etches initial gate 101 until exposing the surface of substrate 100, forms grid, after the gate formation,
AEI monitorings are carried out to grid using OCD technologies, obtain the characteristic size and alignment feature of grid.
However, using above-mentioned monitoring domain when carrying out OCD monitorings, it is difficult to carry out AEI monitorings, only monitored and tied by ADI
Fruit is difficult to reliably reflect whether grid technology occurs process deviation comprehensively, causes technique occur during grid technology
Deviation and can not detect come, reduce semiconductor production yield.Further research hair is carried out for the monitoring domain of above-mentioned offer
It is existing, cause to be the reason for being difficult to AEI monitorings：
Because mask layer 102 includes graphics field I and without graphics field II, the pattern transfer on graphics field I surfaces
Distance h1 at the top of layer 103 to mask layer 102, in the pattern transfer layer 103 without graphics field II surfaces to the top of mask layer 102
Distance be h2, because pattern transfer layer 103 has the characteristic filled and led up, cause much bigger than h1 of h2；With patterned photoetching
When glue-line 104 is mask etching pattern transfer layer 103, etching stopping position is the position for exposing the top of mask layer 102, and h2
Bigger than h1 is more；Therefore, after graphics field I mask layer 102 is exposed, etching stopping, but without graphics field II
The mask layer 102 that is exposed of expectation still covered by pattern transfer layer 103, therefore, it is impossible to which the figure being patterned turns
Move the AEI monitorings of layer 103.After graphics field I mask layer 102 is opened, change etching gas to carry out mask layer 102
Etching, the etching gas should be the etching big and small to the etch rate of pattern transfer layer 103 to the etch rate of mask layer 102
Gas so that the thickness that patterned sections I and the mask layer 102 without graphics field II are etched；When patterned sections I mask
After layer 102 is patterned immediately, no graphics field II's still has segment thickness mask layer 102 not to be patterned immediately, therefore, also can not be to nothing
Graphics field II mask layer 102 carries out AEI monitorings；Likewise, after the etching gas of etching initial gate 101 are changed into,
Graphics field I initial gate 101 is by completely graphical, and the initial gate 101 for still having segment thickness without graphics field II
It is not patterned immediately, the AEI monitorings for the grid that can not be also ultimately formed.
Therefore, a kind of monitoring domain of offer of the embodiment of the present invention, including the first monitoring domain and the second monitoring domain, first
First mask layer of monitoring domain is completely covered on the first initial gate surface, and the second mask layer of the second monitoring domain has the
Two figures, the second initial gate surface are not completely covered；ADI monitorings, the second monitoring version can be carried out using the first monitoring domain
Figure can both carry out ADI monitorings or carry out AEI monitorings, according to the monitoring result of the first monitoring domain and the second monitoring domain, prison
Whether the technique during survey grid technology meets standard, judges which road technique of grid technology not by ADI testing results
Meet standard, so as to adjust non-compliant technique in time, improve production yield.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Fig. 2 is the structural representation for the first monitoring domain that one embodiment of the invention provides, and the first monitoring domain includes：
First substrate 200；
It is covered in first initial gate 201 on the surface of the first substrate 200；
It is covered in first mask layer 202 on the surface of the first initial gate 201；
It is covered in the first pattern transfer layer 203 on the surface of the first mask layer 202；
It is covered in first photoresist layer 205 with the first figure 204 on the surface of the first pattern transfer layer 203, described
One photoresist layer 205 has the intervals of the first line width L1 and first S1.
The first monitoring domain will be described in detail below：
If the first monitoring domain is oversized, the data that ADI monitoring needs acquisitions are carried out to the first monitoring domain are believed
Breath amount is excessive, is unfavorable for improving monitoring efficiency；If the first monitoring domain is undersized, ADI is carried out to the first monitoring domain
It is very few to monitor the data message amount obtained so that the ADI monitoring results of acquisition are not accurate enough.Therefore, in the present embodiment, the first prison
The size of domain is surveyed as 5 μm of 5 μ m to 150 μm of 150 μ m.
First substrate 200 is silicon substrate, germanium substrate, gallium arsenide substrate, silicon-Germanium substrate, the silicon substrate on insulator or exhausted
Germanium substrate on edge body.One or more layers interlayer dielectric layer and interlayer metal layer can also be formed in first substrate 200.
First substrate 200 can also be the substrate for including semiconductor devices, it may for example comprise：PMOS transistor, NMOS crystal
Pipe, capacitor or fin field effect pipe；First substrate 200 can also be to include the substrate formed with patterned structures.
In order to improve the accuracy of monitoring result, the unnecessary influence that avoids different factors from bringing, in the present embodiment,
One substrate 200 is identical with the backing material in grid technology on production line, and first substrate 200 is silicon substrate.
The material of first initial gate 201 is polysilicon, the polysilicon or conducting metal of doping.
In the present embodiment, the material of the initial gate on the material and production line of the first initial gate 201 in grid technology
Identical, the material of the first initial gate 201 is polysilicon.
First mask layer 202 is completely covered on the surface of the first initial gate 201, the thickness of the first mask layer 202 and production
The material and thickness of mask layer on line in grid technology are identical.
The material of first mask layer 202 is silica or silicon oxynitride.
In the present embodiment, the first mask layer 202 is single layer structure, and the material of the first mask layer 202 is silicon nitride.
First pattern transfer layer 203 is single layer structure or sandwich construction；The first pattern transfer layer 203 is single layer structure
When, the first pattern transfer layer 203 is bottom antireflective coating；When first pattern transfer layer 203 is sandwich construction, the first figure turns
Move the laminated construction that layer 203 is organic coat layer and bottom antireflective coating.
In the present embodiment, the material of the first pattern transfer layer 203 and the pattern transfer layer in grid technology on production line with
And thickness all same.
First photoresist layer 205 has the first figure 204, first photoresist layer 205 with the first figure 204 with
The figure of photoresist layer on production line in grid technology is identical.
First photoresist layer 205 has the intervals of the first line width L1 and first S1.First figure 204 is by the
The figure of one photoresist layer 203 covering；The first line width L1 is the distance between adjacent first figure 204, between described first
Every the width that S1 is the first figure 204.
The lenth ratio of the first interval S1 and the first line width L1 is 1:2 to 1:10, the length of the first interval S1
For 50 nanometers to 100 nanometers.
In the present embodiment, the lenth ratio of the first interval S1 and the first line width L1 is 1:3, the first interval S1 length
For 60 nanometers, the first line width L1 length is 180 nanometers.
First photoresist layer 205 defines position and the size of the figure formed after the first pattern transfer layer 203 of etching.
During the grid technology of reality, ADI monitorings are carried out to the first photoresist layer 205, sentenced by ADI monitoring results
Whether the figure of the photoresist layer formed in disconnected actual process meets technological standards；And ADI monitoring results are recorded, if most end form
Into grid do not meet technological standards, then the ADI monitoring results recorded are also used as judging which road work in grid technology
There is the reference frame of deviation in skill.
On a production line in grid technology, mask layer includes graphics field and without graphics field, the mask in graphics field
Layer surface forms pattern transfer layer, while forms pattern transfer layer in the mask layer surface without graphics field, due to forming figure
The technique of transfer layer has filling perforation（gap filling）Characteristic, therefore, to mask at the top of the pattern transfer layer of no graphics field
The distance at layer top, more than at the top of the pattern transfer layer of graphics field to the distance at the top of mask layer, that is to say, that without graph area
The thickness of the pattern transfer layer of domain mask layer surface is more than the thickness of the pattern transfer layer of graphics field mask layer surface.
And in the present embodiment, the first mask layer 202 is to be completely covered on the table of the first initial gate 201 in the first monitoring domain
Face, the first mask layer 202 is equivalent to the mask layer without graphics field in grid technology on production line, the first pattern transfer layer
Without at the top of the pattern transfer layer of graphics field in grid technology in 203 tops to the distance and production line at the top of the first mask layer 202
Distance at the top of to mask layer is identical, i.e. the distance at the top of the first pattern transfer layer 203 to the top of the first mask layer 202, is more than
On production line in grid technology at the top of graphics field pattern transfer layer to the distance at the top of mask layer.
On a production line during grid technology, etching exposes the work for stopping etched features transfer layer at the top of mask layer
Skill, i.e., after being exposed at the top of the mask layer of graphics field, still by the figure of segment thickness at the top of the mask layer of no graphics field
Shape transfer layer covers, likewise, for the first monitoring domain, when the work of grid technology etched features transfer layer on production line
After the completion of skill, the top of the first mask layer 202 still suffers from the first pattern transfer layer 203 of segment thickness, causes grid on a production line
After the completion of the technique of pole, the first initial gate 201 in the first monitoring domain is not by completely graphical, so as to be difficult to monitor to first
Domain carries out AEI monitorings.
Because the first photoresist layer 205 of the first monitoring domain has the first figure 204 repeat, regularly arranged, because
This can obtain the ADI Monitoring Datas of the first photoresist layer 205 from the first monitoring domain；Also, due to the first photoresist layer 205
Bottom is the first mask layer 202, and 205 each region of the first photoresist layer is influenceed all same by the first mask layer 202, avoided
Due to there is materials variances in the bottom of the first photoresist layer 205 and caused by ADI monitoring results there is deviation, therefore, using this
The ADI monitoring results reliability that the first monitoring domain that embodiment provides is carried out is high.
Fig. 3 and Fig. 4 is the structural representation for the second monitoring domain that one embodiment of the invention provides, and Fig. 3 is the second monitoring
The cross-sectional view of domain, Fig. 4 show the position relationship of second graph and the 3rd figure, and the second monitoring domain includes：
Second substrate 300；
It is covered in second initial gate 301 on the surface of the second substrate 300；
The second mask layer 303 with second graph 302 positioned at the surface of the second initial gate 301, described second
Figure 302 is flagpole pattern, and second mask layer 303 has the intervals of the second line width L31 and second S31；
The second graph on the surface of the second initial gate 301 for being covered in the surface of the second mask layer 303 and exposing
Transfer layer 304；
It is covered in second photoresist layer 306 with the 3rd figure 305 on the surface of second graph transfer layer 304, institute
It is flagpole pattern to state the 3rd figure 305, and the 3rd figure 305 is parallel to each other with second graph 302, the second photoresist layer
306 have the intervals of the 3rd line width L32 and the 3rd S32.
It should be noted that Fig. 4 purpose is to show the position relationship between the figure 305 of second graph 302 and the 3rd, figure
4 can be considered Fig. 3 overlooking the structure diagram, and the figure that adjacent solid line surrounds is the 3rd figure 305, the figure of adjacent dotted line
For second graph 302, in the overlooking the structure diagram of reality, second graph 302 can't see.
The provide the present embodiment second monitoring domain is elaborated below：
If the second monitoring domain is undersized, it is not enough to reflect grid technology on production line, if the second monitoring domain
It is oversized, then need the signal that gathers excessive when OCD is monitored, be unfavorable for improving monitoring efficiency；Therefore, in summary examine
Consider, the size of the second monitoring domain is 5 μm of 5 μ m to 150 μm of 150 μ m.
Second substrate 300, the material of the second initial gate 301 can accordingly refer to the first substrate 200 of the first monitoring domain
（It refer to Fig. 2）, the first initial gate 201（It refer to Fig. 2）Material and structure, will not be repeated here.
Unlike the first monitoring domain, there is second graph 302, the second graph 302 in the second mask layer 303
The surface of the second initial gate of part 301 is exposed, second graph 302 is the figure not covered by the second mask layer 303；Described
Two line width L31 are the distance between adjacent second graph 302, and the second interval S31 is the width of second graph 302；It is described
Second interval S31 and the second line width L31 lenth ratio is 1:2 to 1:5.
3rd figure 305 is the figure not covered by the second photoresist layer 306, that is to say, that the second photoresist layer 306 has
The 3rd figure 305 having exposes the surface of part second graph transfer layer 304；The 3rd line width L32 is adjacent 3rd figure
The distance between 305, the 3rd interval S32 are the width of the 3rd figure 305；The intervals of the 3rd line width L32 and the 3rd S32
Lenth ratio be 1:2 to 1:10, the length of the 3rd interval S32 is 50 nanometers to 100 nanometers.
The figure 305 of second graph 302 and the 3rd is is parallel to each other, and the intervals of the second line width L31 and second S31 length
It is equal with the intervals of the 3rd line width L32 and the 3rd S32 length sum to spend sum；Also, in order to after the second mask layer 303 is etched
Obtain the second mask layer 303 for having well-regulated repetitive pattern, the position relationship of the 3rd interval S32 and the second line width L31
Should be：3rd interval S32 is located at the second line width L31 top, and the 3rd interval S32 and the second line width L31 center line weight
Close.
The reason for using the second mask layer 303 with second graph 302 in the second monitoring domain is：With
When the surfaces of the second mask layer 303 of two figures 302 forms second graph transfer layer 304, the top of second graph transfer layer 304 to the
The distance at the top of two mask layer 303, with graphics field pattern transfer layer in grid technology on production line to mask layer distance from top
Identical, therefore, when being exposed in grid technology on production line at the top of the mask layer of graphics field, the second mask layer 303 pushes up
Portion can be also exposed；, also will the monitoring of etching second while grid technology performs etching the technique of mask layer on production line
The second mask layer 303 in domain, when the photoetching offset plate figure of grid technology on production line is transferred in mask layer, the second photoetching
3rd figure 305 of glue-line 306 is transferred in the second mask layer 303, so that the second mask layer 303 has well-regulated repetition
Figure, enabling the AEI Monitoring Datas of the second mask layer 303 with the 3rd figure 305 are obtained, according to AEI Monitoring Datas
It may determine that whether the technique of etching mask layer meets technological standards；When the photoetching offset plate figure of grid technology on production line is transferred to
When initial gate forms the grid of semiconductor devices, the 3rd figure 305 of the second photoresist layer 306 is transferred to the second initial gate
In 301, the grid for having well-regulated repetitive pattern is formed, enabling obtain the AEI monitorings of the grid with the 3rd figure 305
Whether data, the technique that may determine that etching initial gate according to AEI Monitoring Datas meet standard.Also, pass through the second mask
The layer 303 AEI Monitoring Datas and AEI Monitoring Datas of grid, it can be determined which road processing step in grid technology with
There is deviation in technological standards, so as to adjust grid technology parameter in time, improve semiconductor production yield.
Fig. 5, Fig. 6 and Fig. 7 are the structural representation for the second monitoring domain that another embodiment of the present invention provides, Fig. 5 the
The overlooking the structure diagram of two monitoring domains, Fig. 6 be cross-sectional views of the Fig. 5 along AA1 directions, and Fig. 7 is Fig. 5 along BB1 side
To cross-sectional view, second monitoring domain include：
Second substrate 400；
It is covered in second initial gate 401 on the surface of the second substrate 400；
The second mask layer 403 with second graph 402 positioned at the surface of the second initial gate 401, second graph
402 be flagpole pattern, and second mask layer 403 has the intervals of the second line width L41 and second S41；
The second graph on the surface of the second initial gate 401 for being covered in the surface of the second mask layer 403 and exposing
Transfer layer 404；
Second photoresist layer 406 with the 3rd figure 405 on the surface of second graph transfer layer 404 is covered in, the
Three figures 405 are flagpole pattern, and the 3rd figure 405 is mutually perpendicular to second graph 402, and second photoresist layer 406 has
There is the intervals of the 3rd line width L42 and second S42.
It should be noted that Fig. 5 purpose is to show the position relationship between the figure 405 of second graph 402 and the 3rd, phase
The packless figure of adjacent dotted line is second graph 402, and the figure that adjacent solid line surrounds is the 3rd figure 405, in reality
Overlooking the structure diagram in, the mask layer 403 of second graph 402 and second can not be seen, second graph 402 and second are covered
Film layer 402 is covered by the second photoresist layer 406.
The provide the present embodiment second monitoring domain is elaborated below：
Second substrate 400, the second initial gate 401, the material of the second mask layer 403 and second graph transfer layer 404
The second substrate 300 that accordingly can be provided with structure with reference to a upper embodiment（It refer to Fig. 3）, the second initial gate 301（It refer to
Fig. 3）, the second mask layer 303（It refer to Fig. 3）And second graph transfer layer 304（It refer to Fig. 3）Material and structure,
This is repeated no more.
Unlike previous embodiment, in the present embodiment, the figure of the second photoresist layer 406 and the second mask layer 303
Figure be mutually perpendicular to.
The intervals of second line width L41 and second S41 lenth ratio is 1:2 to 1:10, the second interval S41 length is received for 30
Rice is to 100 nanometers；The intervals of 3rd line width L42 and the 3rd S42 lenth ratio is 1:2 to 1:10, the 3rd interval S42 length be
50 nanometers to 100 nanometers.In the present embodiment, the intervals of the second line width L41 and second S41 lenth ratio is 1:3, the second interval
S41 length is 50 nanometers；The intervals of 3rd line width L42 and the 3rd S42 lenth ratio is 1:3, the 3rd interval S42 length be
50 nanometers.
Because in grid technology on a production line, the photoresist layer for forming grid is to etch initial gate to be formed one by one
The figure separated, that is to say, that the figure of the figure of the second mask layer and the second photoresist layer is orthogonal, therefore, is adopted
When the second monitoring domain provided with the present embodiment carries out the monitoring of grid technology, due to the figure 405 of second graph 402 and the 3rd
It is mutually perpendicular to, more can really reflects characteristic size and alignment feature on production line during grid technology.It is also, right
For same size, in the second monitoring domain that the present embodiment provides, the quantity relatively upper one of the gate patterns of formation is implemented
The quantity for the gate patterns that example is formed is more so that the data that AEI monitorings obtain are more, more can really reflect shape on production line
Into grid characteristic size, further improve monitoring result reliability and accuracy.
To sum up, the technical scheme of monitoring domain provided by the invention has advantages below：
First, the present invention provides a kind of monitoring domain of grid technology, including the first monitoring domain and the second monitoring domain,
Wherein, the first monitoring domain includes：First substrate；It is covered in the first initial gate of the first substrate surface；It is covered at the beginning of first
First mask layer of beginning gate surface；It is covered in the first pattern transfer layer of the first mask layer surface；The first figure is covered in turn
Move the first photoresist layer with the first figure of layer surface.ADI monitorings are carried out to the first monitoring domain, obtain the first photoresist
The feature dimension data of layer, judges whether the exposure imaging technique of grid technology meets technological standards.
Second monitoring domain includes：Second substrate；It is covered in the second initial gate of the second substrate surface；It is covered in second
Second mask layer with second graph on initial gate surface；It is covered in the second mask layer surface and expose second
The second graph transfer layer on initial gate surface；It is covered in the second photoetching with the 3rd figure of second graph transfer layer surface
Glue-line.Because the second mask layer has second graph, second graph transfer layer has filling perforation（gap filling）Characteristic, because
To the distance at the top of the second mask layer, less than the first pattern transfer layer top to the first mask layer at the top of this second graph transfer layer
The distance at top, when the second monitoring domain is on production line on the production line of grid technology, grid technology on production line
When being exposed at the top of mask layer, it will be also exposed at the top of the second mask layer of the second monitoring domain so that producing
When the etching gas of grid technology change into the etching gas of etching mask layer on line, the second monitoring of etching gas etching version
Second mask layer of figure；Likewise, after the completion of grid technology on production line, the second initial gate of the second monitoring domain is complete
Full etching open form is into grid, enabling the AEI of the grid of the second monitoring domain is monitored, passes through AEI monitorings and obtains the second prison
The characteristic size and alignment feature of the grid of domain are surveyed, so as to obtain whether the grid formed on production line in grid technology meets
Technological standards.
Secondly, second graph and the 3rd figure are orthogonal, most the second initial gate at last in the second monitoring domain
Cut into a section gate patterns so that the quantity of gate patterns is more, and the quantity of figure is more, the AEI monitoring numbers of acquisition
According to reliability and accuracy it is higher, more can be true and reliable reflect whether grid technology meets technological standards on production line.
Accordingly, the present invention also provides a kind of monitoring method, including：The monitoring domain of foregoing grid technology is provided；Obtain
The ADI Monitoring Datas of first photoresist layer；Using the second photoresist layer as mask, it is sequentially etched second graph transfer layer, second covers
Film layer and the second initial gate form grid, obtain the AEI Monitoring Datas of grid.
Monitoring method provided by the invention is described in detail below with reference to accompanying drawing.
It refer to Fig. 2, there is provided the first monitoring domain, obtain the ADI of the first photoresist layer 205 with the first figure 204
Monitoring Data, as judging whether grid technology meets the reference frame of technological standards.
Using optical measuring technique（OCD）ADI Monitoring Datas are obtained, the ADI Monitoring Datas mainly include characteristic size
Data and alignment feature data.When carrying out ADI monitorings using OCD technologies, not only monitoring velocity is fast, and avoids and supervised to first
The semiconductor junction for surveying domain periphery is configured to damage.
Because the first photoresist layer 205 with the first figure 204 reflects the patterned of grid technology on production line
The quality of photoresist layer, for example, the characteristic size and alignment feature of patterned photoresist layer, therefore obtain the first photoresist layer
205 characteristic size and alignment feature, it can interpolate that whether is the patterned photoresist layer that is formed on production line in grid technology
Meet technological standards.If there is deviation between the ADI Monitoring Datas and technological standards that obtain, illustrate that the exposure of grid technology shows
Shadow technique does not meet technological standards, it is necessary to adjust the exposure imaging technique of grid technology in time.
Also, because the first mask layer 202 in the first monitoring domain is all covered in the surface of the first initial gate 201,
When carrying out ADI monitorings using OCD technologies, hot spot is radiated at each region of the first photoresist layer 205, and to carry out diffraction, reflection equivalent
Should, influence all same of first mask layer 202 to the hot spot positioned at each region in the bottom of the first photoresist layer 205 so that adopt
It is higher that the monitoring result reliability of ADI monitoring acquisitions is carried out with OCD technologies, there is higher reference value.
It refer to Fig. 3 and Fig. 4, there is provided the second monitoring domain, obtain the second photoresist layer 306 with the 3rd figure 305
ADI Monitoring Datas.
The ADI Monitoring Datas of the second photoresist layer 306 are obtained using OCD e measurement technologies.Specifically, hot spot is radiated at second
306 each region of photoresist layer carries out the effects such as diffraction, reflection, collects the data such as diffraction effect and reflection effect and carries out data point
Analysis, so as to obtain the ADI Monitoring Datas of the second photoresist layer 306, the feature dimension data of the second photoresist layer 306 is obtained, is made
To judge whether grid technology meets one of basis for estimation of technological standards.
Fig. 8 is refer to, with second photoresist layer 306（It refer to Fig. 3）For mask, etched using the first etching technics
Until exposing the surface of the second mask layer 303, the second graph that being formed has the 3rd figure 305 turns second graph transfer layer 304
Move layer 304.
The etching technics of first etching technics and etched features transfer layer in grid technology on production line is carried out simultaneously,
And technological parameter is identical between the two.
As one embodiment, formed after the second graph transfer layer 304 with the 3rd figure 305, monitored to second
Domain carries out AEI monitorings, carries out the AEI monitorings using OCD e measurement technologies, obtains AEI Monitoring Datas, predominantly characteristic size
Data and alignment feature data.If deviation occurs between the AEI Monitoring Datas and technological standards, and pass through the first monitoring domain
The ADI monitoring results of acquisition are consistent with technological standards, then the technological parameter for illustrating the first etching technics there is deviation, it is necessary to and
When adjust the technological parameter of the first etching technics, to obtain the second graph with the 3rd figure 305 turn for meeting technological standards
Move layer 304.
As another embodiment, it can also omit and AEI is carried out to the second graph transfer layer 304 with the 3rd figure 305
The step of monitoring.
Fig. 9 is refer to, there is the 3rd figure 305 with described（It refer to Fig. 8）Second graph transfer layer 304（It refer to
Fig. 8）For mask, the second mask layer 303 is etched until exposing the surface of the second initial gate 301, shape using the second etching technics
Into the second mask layer 303 with the 3rd figure 305.
The etching technics of second etching technics and etching mask layer in grid technology on production line is carried out simultaneously, and two
Technological parameter is identical between person.
As one embodiment, formed after the second mask layer 303 with the 3rd figure 305, to the second monitoring domain
AEI monitorings are carried out, the AEI monitorings are carried out using OCD e measurement technologies, obtain the second mask layer 303 with the 3rd figure 305
Characteristic size and alignment feature.If deviation occurs between the AEI Monitoring Datas and technological standards, illustrate the second etching
There is deviation, it is necessary to adjust the technological parameter of the second etching technics in time in the technological parameter of technique, meets technique mark to obtain
Accurate the second mask layer 303 with the 3rd figure 305.
As another embodiment, it can also save and AEI monitorings are carried out to the second mask layer 303 with the 3rd figure 305
The step of.
Figure 10 is refer to, with second mask layer 303 with the 3rd figure 305 for mask, using the 3rd etching work
Until exposing the surface of the second substrate 300, formation grid 310, the AEI for obtaining grid 310 is supervised the second initial gate of skill etching 301
Data are surveyed, as judging whether grid technology meets the reference frame of technological standards.
3rd etching technics is carried out simultaneously with etching the etching technics of initial gate in grid technology on production line, and
Technological parameter is identical between the two.
After the completion of the 3rd etching technics, AEI monitorings are carried out using OCD e measurement technologies, the grid 310 of formation is carried out
AEI is monitored, and obtains the characteristic size and alignment feature of grid 310；By the characteristic size and alignment feature of grid 310, judge
Whether the grid 310 of formation meets technological standards.
If there is deviation between the grid 310 and technological standards that are formed, with reference to the ADI monitorings with reference to the first monitoring domain
As a result, the ADI monitoring results of the second monitoring domain, judgement is that deviation occurs in the exposure imaging technique of photoetching or etching technics goes out
Existing deviation.Specifically：
If the ADI monitoring results of the second monitoring domain are consistent with technological standards, illustrate that the etching technics of grid occurs
Deviation, it is necessary to adjust etch process parameters, to obtain the grid being consistent with technological standards in time.If the ADI of the second monitoring domain
Monitoring result is not inconsistent with technological standards, then needs to be judged according to the ADI monitoring results of the first monitoring domain：If the first monitoring
The ADI monitoring results of domain are consistent with technological standards, then illustrate the exposure imaging technique zero deflection of photoetching, the etching technics of grid
There is deviation, it is necessary to adjust etching technics in time；If occur between the ADI monitoring results and technological standards of the first monitoring domain
Deviation, then illustrate that the exposure imaging technique of photoetching deviation occurs, it is necessary to adjust exposure imaging technique in time, meet work to obtain
The grid of skill standard.
Above provide the monitoring that the second monitoring domain being parallel to each other using second graph and the 3rd figure is monitored
Method, it is monitored below with reference to brief description of the drawings using the orthogonal second monitoring domain of second graph and the 3rd figure
Monitoring method.
It refer to Fig. 2, there is provided the first monitoring domain, obtain the ADI of the first photoresist layer 205 with the first figure 204
Monitoring Data, as judging whether grid technology meets the reference frame of technological standards.
The method for obtaining the ADI Monitoring Datas of the first photoresist layer 205 with the first figure 204 refers to an implementation
The method that example provides, will not be repeated here.
Fig. 5 be refer to Fig. 7, there is provided the second monitoring domain, obtain the second photoresist layer 406 with the 3rd figure 405
ADI Monitoring Datas.
The method for obtaining the ADI Monitoring Datas of the second photoresist layer 406 with the 3rd figure 405 refers to an implementation
The method that example provides, will not be repeated here.
Figure 11 is refer to, Figure 11 is the overlooking the structure diagram on the basis of Fig. 7, with second photoresist layer 406
（It refer to Fig. 7）For mask, second graph transfer layer 404 is etched using the first etching technics（It refer to Fig. 7）Until exposing
Second mask layer 403（It refer to Fig. 7）Surface, form the second graph transfer layer 404 with the 3rd figure 405.
First etching technics refers to the first etching technics of embodiment offer, will not be repeated here.Need
Illustrate, Figure 11 shows the position relationship between the 3rd figure 405 and second graph 402, and the figure of filling is shown not
The surface of the second mask layer 403 covered by the second graph transfer layer 404 with the 3rd figure 405.
As one embodiment, after the completion of the first etching technics, obtain the second graph with the 3rd figure 405 and turn
The AEI Monitoring Datas of layer 404 are moved, judge whether the AEI Monitoring Datas meet technological standards, and the AEI monitoring numbers obtained
Judge that the reference frame of deviation occurs in which road processing step of grid technology according to that can also be used as.
As another embodiment, in order to improve the monitoring efficiency of grid technology, second with the 3rd figure 405 is being formed
After pattern transfer layer 404, the monitoring step that AEI monitorings are carried out to second graph transfer layer 404 is omitted.
Figure 12 is refer to, Figure 12 is the overlooking the structure diagram on the basis of Figure 11, has the 3rd figure 405 with described
Second graph transfer layer 404（It refer to Fig. 7）For mask, the second mask layer 403 is etched using the second etching technics until sudden and violent
Expose the second initial gate 401（It refer to Fig. 7）Surface, form the second mask layer 403 with the 3rd figure 405.
Second etching technics refers to the second etching technics of embodiment offer, will not be repeated here.Need
Illustrate, Figure 12 shows the position relationship of the figure 405 of second graph 402 and the 3rd.
As one embodiment, after the completion of the second etching technics, the second mask layer with the 3rd figure 405 is obtained
403 AEI Monitoring Datas, judge whether the AEI Monitoring Datas meet technological standards, and the AEI Monitoring Datas obtained
Can be as judging that the reference frame of deviation occurs in which road processing step of grid technology.
,, can also after the completion of the second etching technics in order to improve the monitoring efficiency of grid technology as another embodiment
Omit the processing step for the AEI Monitoring Datas for obtaining the second mask layer 403 with the 3rd figure 405.
Figure 13 is refer to, Figure 13 is the overlooking the structure diagram on the basis of Figure 12, with second mask layer 403
（It refer to Figure 12）For mask, the second initial gate 401 is etched using the 3rd etching technics（It refer to Fig. 7）Until expose the
Two substrates 400（It refer to Fig. 7）Surface, grid 410 is formed, the AEI Monitoring Datas of grid 410 are obtained, as judging grid work
Whether skill meets the reference frame of technological standards.
3rd etching technics refers to the 3rd etching technics of embodiment offer, will not be repeated here.
After grid 410 is formed using the 3rd etching technics, AEI monitorings are carried out to the grid 410 of formation, using OCD
Technology carries out the AEI monitorings, obtains the feature dimension data and alignment feature data of grid 410.
If the feature dimension data of grid 410 and alignment feature data fit technological standards that obtain, illustrate grid technology
Meet technological requirement；If the feature dimension data of grid 410 and alignment feature data that obtain deviate technological standards, illustrate grid
Technique does not meet technological requirement；When grid technology does not meet technological requirement, sentenced by the ADI Monitoring Datas of the first monitoring domain
Disconnected is that exposure imaging technique does not meet technological requirement, or etching technics does not meet technological requirement, specifically：If the first monitoring version
The ADI Monitoring Datas of figure show that exposure imaging technique meets technological standards, then illustrate that exposure imaging technique meets technological requirement, carve
There is deviation between etching technique and technological requirement, it is necessary to adjust etch process parameters in time；If the ADI prisons of the first monitoring domain
Survey data show exposure imaging technique do not meet technological standards, then illustrate exposure imaging technique do not meet technological requirement, it is necessary to and
When adjust exposure imaging technological parameter, meet the grid of technological requirement to obtain.
To sum up, the technical scheme of monitoring method provided by the invention has advantages below：
First, the ADI monitoring results of the first monitoring domain are obtained, judge whether exposure imaging technique meets technological standards,
And the ADI monitoring results obtained are also used as judging that the reference frame of deviation occurs in which road processing step of grid technology
One of；After the completion of grid technology, the AEI monitoring results of the grid of formation are obtained, knot is monitored by the AEI of the second monitoring domain
Whether the grid that fruit judges to ultimately form meets technological standards.
Secondly, after the second mask layer with the 3rd figure is formed, the AEI Monitoring Datas of the second mask layer are obtained, will
The AEI Monitoring Datas are as judging whether grid technology meets one of reference frame of technological standards：If AEI Monitoring Datas are inclined
Separating process standard, then illustrate that the etch process parameters of the second mask layer of etching do not meet technological standards, it is necessary to which adjustment etches in time
Technological parameter, so as to further improve semiconductor production yield.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (17)
- A kind of 1. monitoring method of grid technology, it is characterised in that including：First monitoring domain and the second monitoring domain are provided；The first monitoring domain includes：First substrate；It is covered in the first initial gate of first substrate surface；It is covered in the first initial gate surface The first mask layer；It is covered in the first pattern transfer layer of the first mask layer surface；It is covered in the first pattern transfer layer table First photoresist layer with the first figure in face, first photoresist layer have the first line width and the first interval；The second monitoring domain includes：Second substrate；It is covered in the second initial gate of second substrate surface；Positioned at the second initial gate surface The second mask layer with second graph, second mask layer have the second line width and the second interval；It is covered in described second Mask layer surface and the second graph transfer layer on the second initial gate surface exposed；The second graph is covered in turn The second photoresist layer with the 3rd figure of layer surface is moved, second photoresist layer has the 3rd line width and the 3rd interval；First monitoring domain is provided, Monitoring Data after the development of the first photoresist layer is obtained using optical measuring technique, as sentencing Whether disconnected grid technology meets the reference frame of technological standards；Second monitoring domain is provided, Monitoring Data after the development of the second photoresist layer is obtained using optical measuring technique, as sentencing Whether disconnected grid technology meets the reference frame of technological standards；Using the second photoresist layer as mask, second graph transfer layer, the second mask layer and the second initial gate are sequentially etched, Form grid；Second monitoring domain is provided, Monitoring Data after the etching of grid is obtained using optical measuring technique, as judging grid work Whether skill meets the reference frame of technological standards；If there is deviation between the grid and technological standards that are formed, tied with reference to being monitored after the development with reference to the first monitoring domain Fruit, second monitoring domain development after monitoring result, judgement is that the exposure imaging technique of photoetching deviation or etching technics occurs There is deviation.
- 2. the monitoring method of grid technology according to claim 1, it is characterised in that first line width and first interval Lenth ratio is 1:2 to 1:10；The lenth ratio at the 3rd line width and the 3rd interval is 1:2 to 1:10.
- 3. the monitoring method of grid technology according to claim 2, it is characterised in that first interval or the 3rd interval Length is 50 nanometers to 100 nanometers.
- 4. the monitoring method of grid technology according to claim 1, it is characterised in that the second graph and the 3rd figure are equal For flagpole pattern, and the second graph and the 3rd figure are parallel to each other.
- 5. the monitoring method of grid technology according to claim 4, it is characterised in that second line width and second interval Length sum is equal with the 3rd line width and the 3rd length sum being spaced.
- 6. the monitoring method of grid technology according to claim 4, it is characterised in that second interval and the second line width Lenth ratio is 1:2 to 1:5.
- 7. the monitoring method of grid technology according to claim 4, it is characterised in that the 3rd interval and the second line width Position relationship is：3rd is located at interval at the top of the second line width, and the 3rd interval overlaps with the center line of the second line width.
- 8. the monitoring method of grid technology according to claim 1, it is characterised in that the second graph and the 3rd figure are equal For flagpole pattern, and the second graph and the 3rd figure are mutually perpendicular to.
- 9. the monitoring method of grid technology according to claim 8, it is characterised in that second interval and the second line width Lenth ratio is 1:2 to 1:10.
- 10. the monitoring method of grid technology according to claim 8, it is characterised in that the length at second interval is 30 Nanometer is to 100 nanometers.
- 11. the monitoring method of grid technology according to claim 1, it is characterised in that the first monitoring domain and second The size of domain is monitored as 5 μm of 5 μ m to 150 μm of 150 μ m.
- 12. the monitoring method of grid technology according to claim 1, it is characterised in that first figure is not by first The distance between the figure, a width of adjacent first figure of First Line of photoresist layer covering, described first at intervals of the first figure The width of shape；The second graph for not by the second mask layer cover figure, second line width be adjacent second graph it Between distance, described second at intervals of second graph width；3rd figure is by the figure of the second photoresist layer covering Shape, the 3rd line width are the distance between adjacent 3rd figure, the described 3rd at intervals of the 3rd figure width.
- 13. the monitoring method of grid technology according to claim 1, it is characterised in that first mask layer and second is covered The material of film layer is silicon nitride.
- 14. the monitoring method of grid technology according to claim 1, it is characterised in that obtained using optical measuring technique aobvious Monitoring Data after movie queen's Monitoring Data and etching.
- 15. the monitoring method of grid technology according to claim 1, it is characterised in that forming the processing step of grid includes： Using second photoresist layer as mask, second graph transfer layer is etched using the first etching technics until exposing the second mask Layer surface, form the second graph transfer layer with the 3rd figure；Using the second graph transfer layer with the 3rd figure as Mask, the second mask layer is etched using the second etching technics until exposing the second initial gate surface, formation has the 3rd figure Second mask layer of shape；Using second mask layer as mask, the second initial gate is etched using the 3rd etching technics until sudden and violent Expose the second substrate surface, form grid.
- 16. the monitoring method of grid technology according to claim 15, it is characterised in that forming the with the 3rd figure After two mask layers, Monitoring Data after the etching of the second mask layer is obtained.
- 17. the monitoring method of grid technology according to claim 1, it is characterised in that also include：Obtain the second photoresist layer Development after Monitoring Data.
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| CN101989047A (en) * | 2009-07-30 | 2011-03-23 | 上海华虹Nec电子有限公司 | Method for detecting pattern topography of maskplate by dual exposure method |
| TW201140255A (en) * | 2009-12-29 | 2011-11-16 | Hitachi Ltd | Method and apparatus for pattern position and overlay measurement |
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| JP5168190B2 (en) * | 2009-03-02 | 2013-03-21 | 大日本印刷株式会社 | Method for producing photomask having pattern on both sides and photomask |
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