CN104899152A - Storage method for storage - Google Patents
Storage method for storage Download PDFInfo
- Publication number
- CN104899152A CN104899152A CN201510300234.2A CN201510300234A CN104899152A CN 104899152 A CN104899152 A CN 104899152A CN 201510300234 A CN201510300234 A CN 201510300234A CN 104899152 A CN104899152 A CN 104899152A
- Authority
- CN
- China
- Prior art keywords
- interval
- pointer
- write
- storage
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The invention discloses a storage method for a storage. The storage method comprises the following steps: (1) continuously opening up K continuous intervals in the storage, wherein each interval is composed of a plurality of continuous addresses; (2) setting a pointer and directing the pointer to the first interval; (3) reading and writing the first interval for N times and backwards moving the pointer to point to the second interval; reading and writing the second interval for N times and backwards moving the pointer to point to the third interval; and reading and writing the Kth interval for N times and backwards moving the pointer to point to the first interval; and (4) reading and writing the first interval for N times and backwards moving the pointer to point to the second interval and the like. The method disclosed by the invention can be used for preventing one or more addresses from being repeatedly read and written, so that the storage life of the storage is guaranteed.
Description
Technical field
The present invention relates to the technical field of memory of electric energy meter, is specifically a kind of memory storage methods.
Background technology
The storer (EEPROM, FLASH) of prior art generally all has certain reading-writing life-span.If repeatedly use one of them address or multiple address for a long time, be then easy to the damage causing this address or multiple address, namely cannot read and write again.Therefore, for these reasons, urgently need an a kind of address or multiple address can avoided by the memory storage methods of repetitive read-write, the method can improve the reading-writing life-span of storer to a certain extent, to solve the problem.
Summary of the invention
The technical problem to be solved in the present invention is, provides an a kind of address or multiple address can avoided by the memory storage methods of repetitive read-write.
Technical scheme of the present invention is, provides a kind of memory storage methods, comprises the following steps:
(1), in storer, open up K continuum continuously, each interval forms by several continuation addresses;
(2), a pointer is set, and this pointed first is interval;
(3), by first interval read-write N time, sensing second interval after pointer, is moved; By second interval read-write N time, after pointer, move sensing the 3rd interval; By K interval read-write N time, after pointer, move sensing first interval;
(4), by first interval read-write N time, sensing second interval after pointer, is moved, the like.
Described N=5, K=3.
After adopting above method, the present invention compared with prior art, has the following advantages:
Memory storage methods of the present invention can repeatedly utilize multiple address, repeatedly use to avoid one of them address or multiple address, so not only can not cause the damage of this address or multiple address, and also provide certain use interval, thus the reading-writing life-span of storer can be improved to a certain extent.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
The present invention (1), in storer, open up K continuum continuously, each interval forms by several continuation addresses;
(2), a pointer is set, and this pointed first is interval;
(3), by first interval read-write N time, after pointer, move sensing second interval, be equivalent to first interval multiple continuation address substantially to read and write 5 times; By second interval read-write N time, after pointer, move sensing the 3rd interval; By K interval read-write N time, after pointer, move sensing first interval;
(4), by first interval read-write N time, sensing second interval after pointer, is moved, the like.By first interval read-write 5 times, after pointer, move sensing second interval, be equivalent to first interval multiple continuation address substantially to read and write 5 times; By second interval read-write 5 times, after pointer, move sensing the 3rd interval; By the 3rd interval read-write 5 times, move sensing first interval after pointer, circulate so always.
(4), by first interval read-write N time, sensing second interval after pointer, is moved, the like.
Described N=5, k=3.
Below only just most preferred embodiment of the present invention is described, but can not be interpreted as it is limitations on claims.The present invention is not limited only to above embodiment, and its concrete structure allows to change.In every case the various change done in the protection domain of independent claims of the present invention is all in protection scope of the present invention.
Claims (2)
1. a memory storage methods, is characterized in that: comprise the following steps:
(1), in storer, open up K continuum continuously, each interval forms by several continuation addresses;
(2), a pointer is set, and this pointed first is interval;
(3), by first interval read-write N time, sensing second interval after pointer, is moved; By second interval read-write N time, after pointer, move sensing the 3rd interval; By K interval read-write N time, after pointer, move sensing first interval;
(4), by first interval read-write N time, sensing second interval after pointer, is moved, the like.
2. memory storage methods according to claim 1, is characterized in that: described N=5, K=3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510300234.2A CN104899152A (en) | 2015-06-05 | 2015-06-05 | Storage method for storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510300234.2A CN104899152A (en) | 2015-06-05 | 2015-06-05 | Storage method for storage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104899152A true CN104899152A (en) | 2015-09-09 |
Family
ID=54031827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510300234.2A Pending CN104899152A (en) | 2015-06-05 | 2015-06-05 | Storage method for storage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104899152A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030163633A1 (en) * | 2002-02-27 | 2003-08-28 | Aasheim Jered Donald | System and method for achieving uniform wear levels in a flash memory device |
| CN102789423A (en) * | 2012-07-11 | 2012-11-21 | 山东华芯半导体有限公司 | Four-pool flash wear leveling method |
| CN102841852A (en) * | 2011-06-24 | 2012-12-26 | 华为技术有限公司 | Wear leveling method, storing device and information system |
-
2015
- 2015-06-05 CN CN201510300234.2A patent/CN104899152A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030163633A1 (en) * | 2002-02-27 | 2003-08-28 | Aasheim Jered Donald | System and method for achieving uniform wear levels in a flash memory device |
| CN102841852A (en) * | 2011-06-24 | 2012-12-26 | 华为技术有限公司 | Wear leveling method, storing device and information system |
| CN102789423A (en) * | 2012-07-11 | 2012-11-21 | 山东华芯半导体有限公司 | Four-pool flash wear leveling method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102306125B (en) | A kind of data erasing-writing method of FLASH memory | |
| US20150186261A1 (en) | Data storage device and flash memory control method | |
| CN103489479B (en) | Semiconductor storage unit and its operating method | |
| SG11201806099WA (en) | Method and apparatus for accessing flash memory device | |
| WO2010144587A3 (en) | Memory system having persistent garbage collection | |
| WO2012082656A3 (en) | Universal timing waveforms sets to improve random access read and write speed of memories | |
| WO2012100730A3 (en) | Method and device for secure data erasure | |
| MX2019002948A (en) | Method and device for writing stored data into storage medium based on flash memory. | |
| ATE546782T1 (en) | STORAGE SYSTEM | |
| WO2015047962A8 (en) | Volatile memory architecture in non-volatile memory devices and related controllers | |
| CN105659329B (en) | Programming scheme for improved voltage's distribiuting in solid-state memory | |
| TW200834304A (en) | Non-volatile semiconductor memory system and data write method thereof | |
| WO2017111798A8 (en) | High retention time memory element with dual gate devices | |
| TW200737182A (en) | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof | |
| WO2008050337A3 (en) | Erase history-based flash writing method | |
| TWI512609B (en) | Methods for scheduling read commands and apparatuses using the same | |
| WO2015020900A3 (en) | Method and device for error correcting code (ecc) error handling | |
| WO2011087952A3 (en) | Non-volatile memory device and method therefor | |
| JP2016186828A5 (en) | Storage device and storage control method | |
| CN102792381A (en) | Protection against data corruption for multi-level memory cell (MLC) flash memory | |
| WO2007143398A3 (en) | Verify operation for non-volatile storage using different voltages | |
| CN104361907B (en) | A kind of method of counting of FLASH memory | |
| WO2016174521A8 (en) | Multiple read and write port memory | |
| EP3176789A1 (en) | Memory control method and apparatus | |
| ATE378683T1 (en) | COMPENSATION OF A LONG READ TIME OF A MEMORY DEVICE IN DATA COMPARE AND WRITE OPERATIONS |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20160129 Address after: 315191 Yinzhou Industrial Park, Zhejiang, Ningbo, Yinzhou District, Ningbo Applicant after: NINGBO SANXING MEDICAL ELECTRIC CO., LTD. Address before: 315034 Ningbo, Jiangbei District, Zhejiang City, the town of Maple Bay Road, No. 26 Applicant before: Ningbo Samsung intelligent electric company limited |
|
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150909 |
|
| RJ01 | Rejection of invention patent application after publication |