CN104894639B - 一种基于石墨烯场效应管微区加热的原位生长材料的方法 - Google Patents
一种基于石墨烯场效应管微区加热的原位生长材料的方法 Download PDFInfo
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- CN104894639B CN104894639B CN201510316129.8A CN201510316129A CN104894639B CN 104894639 B CN104894639 B CN 104894639B CN 201510316129 A CN201510316129 A CN 201510316129A CN 104894639 B CN104894639 B CN 104894639B
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CN108070903A (zh) * | 2016-11-16 | 2018-05-25 | 北京大学 | 一种对衬底加电调控薄膜材料生长的装置 |
CN108646793B (zh) * | 2018-04-04 | 2020-12-25 | 山西大学 | 一种二维材料三维化形貌控制的装置及方法 |
CN115274889B (zh) * | 2022-06-17 | 2024-10-11 | 中国科学院半导体研究所 | 石墨烯器件及其制备方法、光电探测器 |
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CN103607795A (zh) * | 2013-11-29 | 2014-02-26 | 中国科学院金属研究所 | 一种石墨烯发热膜的制备方法 |
CN103794469A (zh) * | 2012-10-30 | 2014-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种氮化镓薄膜层的制备方法及衬底 |
CN103839835A (zh) * | 2014-03-25 | 2014-06-04 | 中国科学院上海微系统与信息技术研究所 | 一种基于石墨烯场效应管的微区加热方法及结构 |
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CN103794469A (zh) * | 2012-10-30 | 2014-05-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种氮化镓薄膜层的制备方法及衬底 |
CN103607795A (zh) * | 2013-11-29 | 2014-02-26 | 中国科学院金属研究所 | 一种石墨烯发热膜的制备方法 |
CN103839835A (zh) * | 2014-03-25 | 2014-06-04 | 中国科学院上海微系统与信息技术研究所 | 一种基于石墨烯场效应管的微区加热方法及结构 |
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