CN104894639B - 一种基于石墨烯场效应管微区加热的原位生长材料的方法 - Google Patents

一种基于石墨烯场效应管微区加热的原位生长材料的方法 Download PDF

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CN104894639B
CN104894639B CN201510316129.8A CN201510316129A CN104894639B CN 104894639 B CN104894639 B CN 104894639B CN 201510316129 A CN201510316129 A CN 201510316129A CN 104894639 B CN104894639 B CN 104894639B
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graphene
micro
narrow
field effect
effect tube
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CN104894639A (zh
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王浩敏
谢红
李蕾
王慧山
贺立
陈令修
吴天如
邓联文
谢晓明
江绵恒
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Shanghai Institute of Microsystem and Information Technology of CAS
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CN201510316129.8A 2015-06-10 2015-06-10 一种基于石墨烯场效应管微区加热的原位生长材料的方法 Active CN104894639B (zh)

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CN108070903A (zh) * 2016-11-16 2018-05-25 北京大学 一种对衬底加电调控薄膜材料生长的装置
CN108646793B (zh) * 2018-04-04 2020-12-25 山西大学 一种二维材料三维化形貌控制的装置及方法
CN115274889B (zh) * 2022-06-17 2024-10-11 中国科学院半导体研究所 石墨烯器件及其制备方法、光电探测器

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CN103607795A (zh) * 2013-11-29 2014-02-26 中国科学院金属研究所 一种石墨烯发热膜的制备方法
CN103794469A (zh) * 2012-10-30 2014-05-14 北京北方微电子基地设备工艺研究中心有限责任公司 一种氮化镓薄膜层的制备方法及衬底
CN103839835A (zh) * 2014-03-25 2014-06-04 中国科学院上海微系统与信息技术研究所 一种基于石墨烯场效应管的微区加热方法及结构

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US7436044B2 (en) * 2006-01-04 2008-10-14 International Business Machines Corporation Electrical fuses comprising thin film transistors (TFTS), and methods for programming same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103794469A (zh) * 2012-10-30 2014-05-14 北京北方微电子基地设备工艺研究中心有限责任公司 一种氮化镓薄膜层的制备方法及衬底
CN103607795A (zh) * 2013-11-29 2014-02-26 中国科学院金属研究所 一种石墨烯发热膜的制备方法
CN103839835A (zh) * 2014-03-25 2014-06-04 中国科学院上海微系统与信息技术研究所 一种基于石墨烯场效应管的微区加热方法及结构

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