CN104882484A - Tunneling field effect device for channel potential barrier height control - Google Patents
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- CN104882484A CN104882484A CN201510257549.3A CN201510257549A CN104882484A CN 104882484 A CN104882484 A CN 104882484A CN 201510257549 A CN201510257549 A CN 201510257549A CN 104882484 A CN104882484 A CN 104882484A
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- 230000005641 tunneling Effects 0.000 title claims abstract description 44
- 230000005669 field effect Effects 0.000 title claims abstract description 39
- 238000005036 potential barrier Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000002041 carbon nanotube Substances 0.000 claims description 8
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000004088 simulation Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract 2
- 238000005457 optimization Methods 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 description 10
- 230000033228 biological regulation Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
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- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention belongs to the field of semiconductor integrated circuits, and specifically relates to a tunneling field effect device for channel potential barrier height control. The center of the device is provided with a channel, two ends of the channel are provided with a source terminal and a drain terminal of different conductive types, a tunneling junction is formed between the source terminal and the channel, the channel is formed by the adoption of three or more than three potential barrier areas, the energy band of the potential barrier area at the middle section is higher than the energy bands of the channel close to the drain terminal and the source terminal, the device also comprises a gate oxide layer fully covering the channel, and the gate oxide layer is fully covered by a gate electrode. The portion of the channel of the device employs materials of different doping concentrations or types, and three sections or more sections of the potential barrier structures are formed in the channel. According to the simulation research result of the tunneling device structure for channel potential barrier height control, the off-state leakage current of the device can be effectively reduced, the sub-threshold slope is reduced, the short-channel effect and the DIBL effect are suppressed, the transconductance characteristic is good, and comprehensive optimization of the performance of the device is realized.
Description
Technical field
The invention belongs to semiconductor integrated circuit field, be specifically related to a kind of tunneling field-effect device of channel barrier Altitude control.
Background technology
Tunnelling type field effect transistor is based on the energy interband tunneling transmission of charge carrier, have employed the working mechanism different from INVENTIONConventional metal-oxide semiconductor field device architecture, there is superior Sub-Threshold Characteristic, at room temperature lower than the physics limit of INVENTIONConventional metal-oxide semiconductor field device 60 mV/dec, low-down leakage current can be had.But because tunnelling type field effect transistor is based on the quantum tunneling of interband charge carrier realizing carrier transport, its ON state current is less than normal, driving force is more weak, on the other hand, except can realize transporting by interband at the charge carrier of source, also can realize transporting by interband at the charge carrier of drain terminal, and the doping type of source and leakage is contrary, just define the Bipolar current of conducting simultaneously, this bipolarity is unfavorable factor.
In order to improve the structure of tunnelling type fieldtron, there is bi-material layers grid tunnelling type fieldtron structure, adopt the tunnelling type fieldtron structure of two sections of doping to be suggested in channels, these two kinds of structures improve the characteristic of tunnelling type fieldtron all to a certain extent, but to the modulation of electric current still mainly through the control realization of tunnel junctions thickness.Traditional metal oxide semiconductor field-effect device belongs to the structure of channel barrier Altitude control, has larger ON state current, but its charge carrier is based on thermal excitation, and its sub-threshold slope at room temperature can not lower than the physics limit of 60 mV/dec.
Summary of the invention
Technical problem to be solved by this invention is for providing a kind of tunneling field-effect device having large ON state current and little bipolarity On current characteristic.
The technical solution used in the present invention is as follows:
A kind of tunneling field-effect device of channel barrier Altitude control, its center is raceway groove, raceway groove two ends are the different source of conduction type and drain terminal, tunnel junctions is formed between source and raceway groove, described raceway groove adopts the barrier region of more than three sections or three sections to form, wherein interlude barrier region can be with higher than can be with near drain terminal and source in raceway groove; Also have grid oxide layer all standing raceway groove, grid oxide layer is again by gate electrode all standing.
The doping content of source and drain terminal is adjustable, and in raceway groove, doping type and doping content are all adjustable.
Described source and drain terminal adopt same material.
Described source and drain terminal can adopt the carbon nano-tube material of doping.
The different barrier region of channel part of this device adopts the material of different levels of doping or type, in channels the barrier structure of formation three sections or more section.Described raceway groove can adopt the carbon nano-tube material of doping.
Described grid oxide layer can adopt silica.
Device source of the present invention and raceway groove, near the place of source, form tunnelling carrier injection district, realize the cold injection of charge carrier of common tunnelling type field effect transistor device, ensure the physics limit of sub-threshold slope lower than 60 mV/dec under normal temperature of device.
Near the part of drain terminal in the potential barrier of raceway groove interlude and raceway groove, formation control district, for the switch state of control device.Under ON state, load the voltage of grid, the potential barrier entirety in raceway groove is reduced, makes the charge carrier between source, leakage realize tunnelling; Under OFF state, because the barrier height in raceway groove is overall higher than the forbidden band in source, leakage, block the charge carrier tunnelling between source, leakage.The potential barrier in raceway groove is used to realize, to the adjustment of source, leakage energy interband tunnelling in device, by regulating the channel segments near source to adulterate, can ON state current being regulated; By regulating the doping of barrier region and adulterating near the channel segments of drain terminal, off-state current can be controlled; Thus obtain the tunnelling type semiconductor device of high switch current ratio.
Numerous Parameter adjustable of the channel barrier Altitude control tunneling field-effect device of described multistage doping:
1, total length, the width-adjustable of its raceway groove;
2, the adjustable length of the different segmentation of its raceway groove;
3, the semi-conducting material of its raceway groove is adjustable;
4, its source dopant material, doping content, doping type is adjustable;
5, its channel region different segmentation, dopant material, doping content, doping type is adjustable;
6, its drain terminal dopant material, doping content, doping type (contrary with source) is adjustable;
7, the material of its grid oxide layer is adjustable;
8, the thickness of its grid oxide layer is adjustable;
9, the adjustable length of its metal gate;
10, the work function of its metal gate is adjustable;
The channel barrier Altitude control tunneling field-effect device of the multistage doping that the present invention proposes, compares under the condition that source and drain end is consistent with channel region width, raceway groove total length, gate insulator layer material and the tunneling field-effect device that the tunneling field-effect device that thickness, source and drain end doping content etc. and raceway groove one section adulterates, raceway groove two sections adulterate etc.The introducing of the channel barrier of multistage doping makes tunneling field-effect device off-state current diminish, and ON state current becomes large, and switch current ratio increases.Therefore the present invention optimizes the combination property of tunneling field-effect device further, has promoted the development of channel doping engineering.
The present invention is on existing tunnelling type fieldtron Research foundation, by three sections or multistage doping in raceway groove, form barrier structure in channels, wherein being with of barrier segment is significantly higher than adjacent area, tunnelling type fieldtron and traditional channel barrier Altitude control device principle are combined, regulate the barrier height in raceway groove by grid, control source and drain tunnelling current, obtain the complex optimum of device performance.The present invention can increase the ON state current of tunnelling type fieldtron and suppress bipolarity On current, and the sub-threshold slope at room temperature obtained lower than 60 mV/dec physics limits, to improving SNR, minification, promote the development of semiconductor integrated circuit, there is positive role.
Accompanying drawing explanation
Fig. 1, the channel barrier Altitude control tunneling field-effect device schematic cross-section of multistage of the present invention doping, and potential barrier schematic diagram in the raceway groove that brings of adulterating;
Fig. 2, changes tunneling device grid voltage, on the impact that electromotive force in raceway groove causes;
Fig. 3, under same structure parameter, distribution map can be with in the channel barrier Altitude control tunneling field-effect device of multistage doping and the single hop channel doping tunneling field-effect device of correspondence, the device channel region of two sections of channel doping tunneling field-effect devices;
Fig. 4, under same structure parameter, the channel barrier Altitude control tunneling field-effect device of multistage doping and the single hop channel doping tunneling field-effect device of correspondence, the transfer characteristic curve of two sections of channel doping tunneling field-effect devices;
Fig. 5, fixing other parameters of tunneling device, change the impact on device band structure when channel segments one is adulterated;
Fig. 6, fixing other parameters of tunneling device, change the impact on device band structure when channel segments three is adulterated;
Fig. 7, fixing other parameters of tunneling device, in raceway groove three sections of doping device architectures, adopt two sections of doping to channel segments one, are formed in raceway groove, more (four sections) doping device architecture than three sections.
Fig. 8, fixing other parameters of tunneling device, in raceway groove three sections of doping device architectures, adopt two sections of doping to channel segments three, are formed in raceway groove, more (four sections) doping device architecture than three sections.
Embodiment
Below in conjunction with concrete embodiment (channel barrier of N-shaped raceway groove multistage doping controls tunneling field-effect device), the present invention is further elaborated, but the present invention is not limited to following embodiment.
As shown in Figure 1, the channel barrier of multistage doping of the present invention controls tunneling field-effect device and comprises source 1, near the channel segments 1 in source, and raceway groove mid portion channel segments 23, near the channel segments 34 of leaking, drain terminal 5, gate electrode 6, grid oxide layer 7.This device architecture presents symmetry with axle center, and center is raceway groove 2, and 3,4, raceway groove two ends are the source and drain end 1 and 5 of same material, and the source 1 of this device is p-type heavy doping, drain terminal 2 is N-shaped heavy doping, and channel segments 1 and channel segments 34 are N-shaped light dope, and channel segments 34 is intrinsic region; Gate oxide 7 all standing raceway groove 2,3,4, again by gate electrode 6 all standing on oxide.Wherein fixing parameter is as follows: source 1 is the carbon nano-tube material of certain doping content, and drain terminal 5 is the carbon nano-tube material of certain doping content, raceway groove 2,3, and 4 is the carbon nano-tube material of certain doping content; Device widths is 2 nm, and the silica of grid oxide layer 7 to be thickness be 1nm, gate electrode 6 is metal, and the energy gap of carbon nano-tube material is 0.7 eV.It is obtain based on the NanoTCAD ViDES software simulation research of three-dimensional that the channel barrier of multistage of the present invention doping controls tunneling field-effect device performance.
Embodiment 1: channel length is 60 nanometers, source, leakage length are each 20 nanometers, the band structure of the channel barrier Altitude control tunneling field-effect device of multistage doping, the change produced with gate voltage.
As shown in Figure 2, the doping that in channel region, three ends are different, makes electromotive force in channel segments one, and being with of channel segments two and channel segments three is highly different, and wherein the channel segments two in raceway groove centre position can be with higher than channel segments one and channel segments three, formation potential barrier; Along with gate voltage increases to 0.4 volt from 0 volt, this potential barrier exists always, but height change along with gate voltage, be subject to the regulation and control of grid, can be used for regulation and control source and drain between tunnelling current.
Embodiment 2: channel length is 60 nanometers, source, leakage length are each 20 nanometers, the impact that the tunneling field-effect device of multistage channel doping and corresponding single hop channel doping, two sections of channel doping tunneling field-effect tube devices can be with channel region.
As the band structure in Fig. 3, and shown in transfer characteristic curve in Fig. 4, compared with traditional single hop channel doping device, the doping in channel segments one makes the slope of source-channel junction increase, add the charge carrier tunnelling between source-raceway groove, thus increase the ON state current of device; On the other hand, compared with two sections of channel doping devices, the doping in channel segments two, makes the slope of raceway groove-drain junction reduce, reduces the charge carrier tunnelling between raceway groove-leakage, inhibit two-way admittance characteristic, thus reduces off-state current.Analyzed by simulation comparison, under certain parameter is rationally arranged, carry out the balance being with distribution, good device synthesis performance can be obtained.
Embodiment 3: channel length is 60 nanometers, source, leakage length are each 20 nanometers, change the doping content of channel segments one to the impact of band structure.
As shown in Figure 5, along with the increase of channel segments one doping content, the doping content of itself and source and channel segments two changes aggravates, and adds the band curvature of channel segments one correspondence.
Embodiment 4: channel length is 60 nanometers, source, leakage length are each 20 nanometers, change the doping content of channel segments three to the impact of band structure.
As shown in Figure 6, along with the increase of channel segments three doping content, its with to leak and the doping content of channel segments two changes and aggravates, add the band curvature of channel segments three correspondence.
Embodiment 5: channel length is 60 nanometers, source, leakage length are each 20 nanometers, and the highest section of potential barrier is near the side in source in channels, adopts two sections of doping.
As shown in Figure 7, potential barrier most significant end is near the side in source in channels, and two sections of doping define vicissitudinous band structure, in whole raceway groove, and the channel structure that (more than three sections) that form four sections adulterate.
Embodiment 6: channel length is 60 nanometers, source, leakage length are each 20 nanometers, and the highest section of potential barrier is near the side of leaking in channels, adopts two sections of doping.
As shown in Figure 8, potential barrier most significant end is near the side of leaking in channels, and two sections of doping define vicissitudinous band structure, in whole raceway groove, and the channel structure that (more than three sections) that form four sections adulterate.
From above example 1-6, the present invention's three sections of proposing or the channel barrier Altitude control tunneling field-effect device of multistage channel doping can build a potential barrier in channels, this potential barrier can increase the band curvature of source-channel junction, regulation and control source and drain tunnelling current, increase the ON state current of device, the two-way admittance characteristic of suppression device, improve switch current ratio, improve device synthesis performance, strengthen the competitiveness of tunneling field-effect device.
Claims (8)
1.
a kind of tunneling field-effect device of channel barrier Altitude control, it is characterized in that, its center is raceway groove, raceway groove two ends are the different source of conduction type and drain terminal, tunnel junctions is formed between source and raceway groove, described raceway groove adopts the barrier region of more than three sections or three sections to form, wherein interlude barrier region can be with higher than can be with near drain terminal and source in raceway groove; Also have grid oxide layer all standing raceway groove, grid oxide layer is again by gate electrode all standing.
2. tunneling field-effect device according to claim 1, is characterized in that, described source and drain terminal adopt same material.
3. tunneling field-effect device according to claim 2, is characterized in that, described source and drain terminal adopt the carbon nano-tube material adulterated.
4. tunneling field-effect device according to claim 1, is characterized in that, the different barrier region of described channel part adopts the material of different levels of doping or type.
5. tunneling field-effect device according to claim 4, is characterized in that, described raceway groove adopts the carbon nano-tube material of doping.
6. tunneling field-effect device according to claim 1, is characterized in that, described grid oxide layer adopts silica.
7. tunneling field-effect device according to claim 1, is characterized in that, described source and raceway groove, near the place of source, form tunnelling carrier injection district.
8. tunneling field-effect device according to claim 1, is characterized in that, near the part of drain terminal in the potential barrier of described raceway groove interlude and raceway groove, and formation control district.
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| CN201510257549.3A CN104882484A (en) | 2015-05-19 | 2015-05-19 | Tunneling field effect device for channel potential barrier height control |
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| CN201510257549.3A CN104882484A (en) | 2015-05-19 | 2015-05-19 | Tunneling field effect device for channel potential barrier height control |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789442A (en) * | 2016-05-23 | 2016-07-20 | 京东方科技集团股份有限公司 | Thin film transistor as well as manufacturing method and corresponding device thereof |
| CN108733940A (en) * | 2018-05-28 | 2018-11-02 | 复旦大学 | A kind of high-performance silicon-based ellipse grid tunneling field-effect transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094349A (en) * | 2013-01-31 | 2013-05-08 | 南京邮电大学 | Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings |
| EP2775529A2 (en) * | 2013-03-06 | 2014-09-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Tunnel-effect transistor |
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2015
- 2015-05-19 CN CN201510257549.3A patent/CN104882484A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094349A (en) * | 2013-01-31 | 2013-05-08 | 南京邮电大学 | Three-material heterogeneous grid carbon nano tube field-effect tube with owe gratings |
| EP2775529A2 (en) * | 2013-03-06 | 2014-09-10 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Tunnel-effect transistor |
Non-Patent Citations (1)
| Title |
|---|
| HAO WANG ET AL.: "A Novel Barrier Controlled Tunnel FET", 《IEEE ELECTRON DEVICE LETTERS》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789442A (en) * | 2016-05-23 | 2016-07-20 | 京东方科技集团股份有限公司 | Thin film transistor as well as manufacturing method and corresponding device thereof |
| CN105789442B (en) * | 2016-05-23 | 2018-12-18 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), its production method and related device |
| CN108733940A (en) * | 2018-05-28 | 2018-11-02 | 复旦大学 | A kind of high-performance silicon-based ellipse grid tunneling field-effect transistor |
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Application publication date: 20150902 |