CN104868458A - Induced voltage absorption device and method thereof - Google Patents
Induced voltage absorption device and method thereof Download PDFInfo
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- CN104868458A CN104868458A CN201510279593.4A CN201510279593A CN104868458A CN 104868458 A CN104868458 A CN 104868458A CN 201510279593 A CN201510279593 A CN 201510279593A CN 104868458 A CN104868458 A CN 104868458A
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Abstract
The invention provides an induced voltage absorption device and a method thereof. The device comprises a shell and an induced voltage absorption circuit which is arranged in the internal part of the shell. The shell is a cuboid hollow sealed shell. The upper surface of the shell is provided with a high-voltage conductive wire connecting terminal Main, a switching feature instrument connecting terminal Osc and a grounding terminal E. The induced voltage absorption circuit is connected between the switching feature instrument connecting terminal Osc and the grounding terminal E. Both of the high-voltage conductive wire connecting terminal Main and the switching feature instrument connecting terminal Osc are a three-phase connecting terminal. The circuit structure of the induced voltage absorption circuit is that the switching feature instrument connecting terminal Osc is connected with the grounding terminal E through a three-phase switch SW and a resistor R1 in turn. Each phase of the connecting terminal of the switching feature instrument connecting terminal Osc is connected with the grounding terminal through a low-voltage capacitor. The capacitance value of the low-voltage capacitor is not less than 0.045 microfarad, and the low-voltage capacitance values on the three phases are equal. Induced voltage of a short circuit plate can be absorbed so that personal and equipment safety can be guaranteed.
Description
Technical field
The present invention relates to electric field, particularly relate to a kind of induced voltage absorption plant and method thereof.
Background technology
Gas-insulated closed metal switchgear (be called for short GIS) is made up of circuit breaker, isolating switch, earthed switch, bus, voltage transformer, current transformer and control, subsidiary loop, it is the important primary equipment of transformer station, have the advantages that battlefield area is little, easy to maintenance, current 550kV and following electric pressure product widely use, 1100kV GIS also has two circuits to put into operation, and two circuits are built.
Different according to transformer station, there is available for different connection modes, wherein, 550kV and above GIS is generally 3/2 mode of connection (namely two circuits have three circuit breakers, are called a string, and middle circuit breaker is two line sharings), a string typical wiring mode is as Fig. 1, and wherein, CB is circuit breaker, DS is isolating switch, ES is earthed switch, and HSES is high speed grounding switch, and CT is current transformer, VT is voltage transformer, and BG is sleeve pipe.
According to operation, the service regulations of GIS, need to carry out periodic inspection, maintenance to relevant device, and overhaul, safeguard that the most of the time separately carries out each circuit breaker in a string, as in Fig. 1, circuit breaker in the middle of maintenance, the normal charging operation of both sides circuit breaker.According to regulations stipulate, the circuit breaker after maintenance needs to carry out the feature measurement such as closing time, opening time, to determine whether the correlation properties of circuit breaker meet technical requirement.When measuring circuit breaker characteristic, need the on-off logical signal obtaining circuit breaker both sides, this signal obtains from the earthed switch (ES) of circuit breaker both sides, closed a floodgate by both sides earthed switch during method, at least the ground short circuit plate of the earthed switch of one end dismantles to obtain major loop signal simultaneously.But because both sides circuit is charged, if after the ground short circuit plate of earthed switch dismantles, have very high induced voltage herein, if directly measurement can bring very major injury to the person, equipment.
Summary of the invention
In order to solve the problems of the technologies described above, the present invention proposes a kind of induced voltage absorption plant, and it can absorb the induction high pressure at short board place in earthed switch, and is reduced within the scope of human safety voltage, ensure that the safety of the person, equipment.
To achieve these goals, the technical solution used in the present invention is:
A kind of induced voltage absorption plant, comprises housing and is placed in the induced voltage absorbing circuit of enclosure interior, described housing is cuboid hollow closed shell, described housing upper surface is provided with high-voltage conducting wires binding post Main, switch characteristic instrument binding post Osc and earth terminal E, induced voltage absorbing circuit is connected between described switch characteristic instrument binding post Osc and earth terminal, described high-voltage conducting wires binding post Main and switch characteristic instrument binding post Osc is three-phase terminal, the circuit structure of described induced voltage absorbing circuit is, switch characteristic instrument binding post Osc is connected earth terminal E by threephase switch SW with resistance R1 successively, every phase connection terminal of described switch characteristic instrument binding post Osc connects earth terminal respectively by a low-voltage capacitance, the capacitance of described low-voltage capacitance is for being not less than 0.045uF, low tension capacitance on described three-phase is equal.
Described enclosure interior also comprises anti-misoperation control circuit, and described anti-misoperation control circuit comprises A phase anti-misoperation control circuit, B phase anti-misoperation control circuit and C phase anti-misoperation control circuit.
Described A phase anti-misoperation control circuit structure is, the input coil of transformer T1 is connected with between the A phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of described transformer T1 has a1, b1, c1 tri-nodes, wherein a1 and b1 is two end nodes, c1 is the mid point of two end nodes, described node a1 is by diode D1 connected node d1, described node b1 is by diode D2 connected node d1, described node c1 ground connection, described node d1 be connected the resistance R2 and electric capacity C4 that are connected in series between ground, node d1 is successively by resistance R3, resistance R4 is connected earth terminal E with resistance R5, described resistance R3 is connected the source electrode of metal-oxide-semiconductor M1 with the node between resistance R4, described resistance R4 is connected the grid of metal-oxide-semiconductor M1 with the node between resistance R5, the grounded drain of described metal-oxide-semiconductor M1, the coil of relay switch K1 is connected with between described node d1 and the source electrode of metal-oxide-semiconductor M1, between the A phase connection terminal that the plug-in strip of described relay switch K1 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the A phase connection terminal that the plug-in strip of described relay switch K1 is connected to switch characteristic instrument binding post Osc and electric capacity C1.
Described B phase anti-misoperation control circuit structure is, the input coil of transformer T2 is connected with between the B phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of described transformer T1 has a2, b2, c2 tri-nodes, wherein a2 and b2 is two end nodes, c2 is the mid point of two end nodes, described node a2 is by diode D3 connected node d2, described node b2 is by diode D4 connected node d2, node c2 ground connection, described node d2 be connected the resistance R22 and electric capacity C42 that are connected in series between ground, described node d2 is successively by resistance R32, resistance R42 is connected earth terminal E with resistance R52, described resistance R32 is connected the source electrode of metal-oxide-semiconductor M2 with the node between resistance R42, described resistance R42 is connected the grid of metal-oxide-semiconductor M2 with the node between resistance R52, the grounded drain of described metal-oxide-semiconductor M2, the coil of relay switch K2 is connected with between described node d2 and the source electrode of metal-oxide-semiconductor M2, between the B phase connection terminal that the plug-in strip of described relay switch K2 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the B phase connection terminal that the plug-in strip of described relay switch K2 is connected to switch characteristic instrument binding post Osc and electric capacity C2.
Described C phase anti-misoperation control circuit structure is, the input coil of transformer T3 is connected with between the C phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of described transformer T3 has a3, b3, c3 tri-nodes, wherein a3 and b3 is two end nodes, c3 is the mid point of two end nodes, described node a3 is by diode D5 connected node d3, described node b3 is by diode D6 connected node d3, described node c3 ground connection, described node d3 be connected the resistance R23 and electric capacity C43 that are connected in series between ground, described node d3 is successively by resistance R33, resistance R43 is connected earth terminal E with resistance R53, described resistance R33 is connected the source electrode of metal-oxide-semiconductor M3 with the node between resistance R43, described resistance R43 is connected the grid of metal-oxide-semiconductor M3 with the node between resistance R53, the grounded drain of described metal-oxide-semiconductor M3, the coil of relay switch K3 is connected with between described node d3 and the source electrode of metal-oxide-semiconductor M3, between the C phase connection terminal that the plug-in strip of described relay switch K3 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the C phase connection terminal that the plug-in strip of described relay switch K3 is connected to switch characteristic instrument binding post Osc and electric capacity C3.
Described low tension capacitance is 0.1 μ F, and the resistance of described resistance R1 is 300 Ω.
A kind of induced voltage absorption process, comprises step:
1), by wire, by switch characteristic instrument binding post Osc and the main fracture expanding channels of switch characteristic instrument, during connection, A phase, B phase and C mutual reinforcement between connect one to one;
2), by wire, be connected by high-voltage conducting wires binding post Main with wire, during connection, A phase, B phase and C mutual reinforcement between connect one to one;
3), by wire, by earth terminal E ground connection, the ground short circuit plate of earthed switch is removed;
4), utilize switch characteristic instrument measurement characteristics, during measurement, threephase switch SW separating brake, measure after terminating, threephase switch SW closes a floodgate.
Beneficial effect of the present invention is:
1, because wire produces gap capacitance with between high pressure and metal shell, this gap capacitance is not really exist but the equivalent capacity that judged by practical experience and theory analysis of technical staff, utilize low-voltage capacitance voltage divider principle, get low tension capacitance for being not less than 0.045uF, make the voltage control of switch characteristic instrument fracture passage within human safety voltage, ensure that personal safety and instrument safety;
2, anti-misoperation control circuit is added, when staff's misoperation, personal safety can't be caused to endanger, have employed automatic earthing conducting simultaneously and control whole circuit, this design just serves protective effect relative to not having anti-misoperation control circuit not increase any operation;
3, a kind of induced voltage absorption process is provided, the method utilizes capacitance partial pressure, and anti-misoperation control circuit guarantees that staff does not have life danger when removing short board, and the method is simple to operate simultaneously, effectively can absorb induced voltage, make whole feature measurement process safety convenient.
Accompanying drawing explanation
The wiring schematic diagram that Fig. 1 is a string;
The concrete connection layout of Fig. 2 earthed switch and GIS;
The equivalent circuit diagram of Fig. 3 earthed switch and GIS;
Fig. 4 vertical view of the present invention;
Fig. 5 induced voltage absorbing circuit;
Fig. 6 anti-misoperation control circuit, wherein 6a is A phase anti-misoperation control circuit, and 6b is B phase anti-misoperation control circuit, and 6c is C phase anti-misoperation control circuit.
Embodiment
In order to better understand technical scheme of the present invention, below in conjunction with accompanying drawing, the invention will be further described.
As shown in Figure 1, when overhauling circuit breaker, the earthed switch of these circuit breaker both sides is needed to close a floodgate, (earthed switch could ground connection by ground short circuit plate for the ground short circuit plate of the simultaneously at least earthed switch of one end, remove ground short circuit plate and mean the unsettled instead of ground connection of earthed switch, therefore, this place has very high induced voltage) dismantle, the on-off logical signal of circuit breaker both sides could be obtained like this.
Fig. 2 is the concrete connection layout of earthed switch and GIS.Because wire is with high pressure, and housing is metal shell, there is gap simultaneously, cause there is gap capacitance between the wire in GIS and earthed switch between wire and earthed switch, and this gap capacitance is also the factor producing induction high pressure.Its equivalent circuit diagram as shown in Figure 3.Wherein the value of gap capacitance C0 is 5PF.
As shown in figs. 4 and 5, a kind of induced voltage absorption plant, comprise housing, the upper surface of housing is provided with high-voltage conducting wires binding post Main, switch characteristic instrument binding post Osc and earth terminal E, induced voltage absorbing circuit is connected between switch characteristic instrument binding post Osc and earth terminal, high-voltage conducting wires binding post Main and switch characteristic instrument binding post Osc is three-phase terminal, namely have three ports respectively correspondence meet A, B, C phase circuit, the circuit structure of induced voltage absorbing circuit is, switch characteristic instrument binding post Osc is connected earth terminal by threephase switch SW with resistance R1 successively, every phase connection terminal of switch characteristic instrument binding post Osc connects earth terminal respectively by a low-voltage capacitance, the capacitance of low-voltage capacitance is for being not less than 0.045uF.Housing is cuboid hollow closed shell, built-in sensitive voltage absorpting circuit.Low-voltage capacitance is respectively C1, C2, C3.The capacitance of C1, C2 and C3 is equal.
Utilize series capacitance voltage divider principle, with gap capacitance C0 for high-voltage capacitance, about 5PF capacitance; Choose low-voltage capacitance again, one end of low-voltage capacitance is connected with earth terminal, other end ground connection, voltage capacitor as chosen is 0.1 μ F, the words (that is: 550/1.732=318kV) that electrification in high voltage position induced voltage is equal with working voltage, so now the voltage at earth terminal position is about: 318*10
3/ (0.1*10
6/ 5) ≈ 16V.This voltage is safe voltage (safe voltage that people can contact is 36V), can meet the requirement of circuit breaker characteristic tester Logic judgment completely.Consider safety requirements, select 0.1 μ F 4000V capacitor.Meanwhile, be safe handling, to set up after interrupteur SW and 300 Ω resistant series again with the connected mode of Capacitance parallel connection.
Anti-misoperation control circuit is also provided with in housing.
As shown in Figure 6, the circuit structure of anti-misoperation control circuit comprises A phase anti-misoperation control circuit, B phase anti-misoperation control circuit and C phase anti-misoperation control circuit.
A phase anti-misoperation control circuit structure is, the input coil of transformer T1 is connected with between the A phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of transformer T1 has a1, b1, c1 tri-nodes, wherein a1 and b1 is two end nodes, c1 is the mid point of two end nodes, node a1 is by diode D1 connected node d1, node b1 is by diode D2 connected node d1, node c1 ground connection, node d1 be connected the resistance R2 and electric capacity C4 that are connected in series between ground, node d1 is successively by resistance R3, resistance R4 is connected earth terminal E with resistance R5, node between resistance R3 with resistance R4 is connected the source electrode of metal-oxide-semiconductor M1, node between resistance R4 with resistance R5 is connected the grid of metal-oxide-semiconductor M1, the grounded drain of metal-oxide-semiconductor M1, the coil of relay switch K1 is connected with between the source electrode of node d1 and metal-oxide-semiconductor M1, between the A phase connection terminal that the plug-in strip of relay switch K1 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the A phase connection terminal that the plug-in strip of relay switch K1 is connected to switch characteristic instrument binding post Osc and electric capacity C1.
B phase anti-misoperation control circuit structure is, the input coil of transformer T2 is connected with between the B phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of transformer T1 has a2, b2, c2 tri-nodes, wherein a2 and b2 is two end nodes, c2 is the mid point of two end nodes, node a2 is by diode D3 connected node d2, node b2 is by diode D4 connected node d2, node c2 ground connection, node d2 be connected the resistance R22 and electric capacity C42 that are connected in series between ground, node d2 is successively by resistance R32, resistance R42 is connected earth terminal E with resistance R52, node between resistance R32 with resistance R42 is connected the source electrode of metal-oxide-semiconductor M2, node between resistance R42 with resistance R52 is connected the grid of metal-oxide-semiconductor M2, the grounded drain of metal-oxide-semiconductor M2, the coil of relay switch K2 is connected with between the source electrode of node d2 and metal-oxide-semiconductor M2, between the B phase connection terminal that the plug-in strip of relay switch K2 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the B phase connection terminal that the plug-in strip of relay switch K2 is connected to switch characteristic instrument binding post Osc and electric capacity C2.
C phase anti-misoperation control circuit structure is, the input coil of transformer T3 is connected with between the C phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of transformer T3 has a3, b3, c3 tri-nodes, wherein a3 and b3 is two end nodes, c3 is the mid point of two end nodes, node a3 is by diode D5 connected node d3, node b3 is by diode D6 connected node d3, node c3 ground connection, node d3 be connected the resistance R23 and electric capacity C43 that are connected in series between ground, node d3 is successively by resistance R33, resistance R43 is connected earth terminal E with resistance R53, node between resistance R33 with resistance R43 is connected the source electrode of metal-oxide-semiconductor M3, node between resistance R43 with resistance R53 is connected the grid of metal-oxide-semiconductor M3, the grounded drain of metal-oxide-semiconductor M3, the coil of relay switch K3 is connected with between the source electrode of node d3 and metal-oxide-semiconductor M3, between the C phase connection terminal that the plug-in strip of relay switch K3 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the C phase connection terminal that the plug-in strip of relay switch K3 is connected to switch characteristic instrument binding post Osc and electric capacity C3.
Based on an induced voltage absorption process for induced voltage absorption plant, comprise the following steps:
1), by wire, by switch characteristic instrument binding post Osc and the main fracture expanding channels of switch characteristic instrument, during connection, A phase, B phase and C mutual reinforcement between connect one to one;
2), by wire, be connected by high-voltage conducting wires binding post Main with wire, during connection, A phase, B phase and C mutual reinforcement between connect one to one;
3), by wire, by earth terminal E ground connection, the ground short circuit plate of earthed switch is removed;
4), utilize switch characteristic instrument measurement characteristics, during measurement, threephase switch SW separating brake, measure after terminating, threephase switch SW closes a floodgate.
Switch characteristic instrument fracture passage is the signal sampling channel of switch characteristic instrument, is used to gather the required signal measured.
The effect of anti-misoperation control circuit directly carries out feature measurement under preventing the earth-free situation of earth terminal E, because circuit does not form path so induced voltage now will not caused the person by this misoperation of absorption, measuring instrument is subject to serious harm, so with the addition of anti-misoperation control circuit.
The operation principle of anti-misoperation control circuit is, first transformer is utilized to be reduced by the voltage of induced voltage, recycle two diodes and intermediate node plays rectified action, then by capacitance resistance filtering, finally utilize series resistance dividing potential drop, utilize the second resistor in series resistance to control metal-oxide-semiconductor simultaneously, when earth terminal E ground connection, series resistance circuit turn-on, the voltage difference conducting metal-oxide-semiconductor at second resistor two ends, the conducting of metal-oxide-semiconductor makes relay switch coil electricity produce magnetic force, and adhesive plug-in strip, makes the conducting of whole induced voltage absorbing circuit.If misoperation, the connection performance measuring instrument when earth terminal does not have ground connection, causes whole measuring circuit to be that open circuit now effectively also can not can not cause the harm of the person and instrument by measurement characteristics because switch relay is not closed.
By reference to the accompanying drawings the specific embodiment of the present invention is described although above-mentioned; but not limiting the scope of the invention; one of ordinary skill in the art should be understood that; on the basis of technical scheme of the present invention, those skilled in the art do not need to pay various amendment or distortion that creative work can make still within protection scope of the present invention.
Claims (7)
1. an induced voltage absorption plant, is characterized in that, comprises housing and is placed in the induced voltage absorbing circuit of enclosure interior, described housing is cuboid hollow closed shell, described housing upper surface is provided with high-voltage conducting wires binding post Main, switch characteristic instrument binding post Osc and earth terminal E, induced voltage absorbing circuit is connected between described switch characteristic instrument binding post Osc and earth terminal, described high-voltage conducting wires binding post Main and switch characteristic instrument binding post Osc is three-phase terminal, the circuit structure of described induced voltage absorbing circuit is, described switch characteristic instrument binding post Osc is connected earth terminal E by threephase switch SW with resistance R1 successively, every phase connection terminal of described switch characteristic instrument binding post Osc connects earth terminal respectively by a low-voltage capacitance, the capacitance of described low-voltage capacitance is for being not less than 0.045uF, low tension capacitance on described three-phase is equal.
2. a kind of induced voltage absorption plant according to claim 1, it is characterized in that, described enclosure interior also comprises anti-misoperation control circuit, and described anti-misoperation control circuit comprises A phase anti-misoperation control circuit, B phase anti-misoperation control circuit and C phase anti-misoperation control circuit.
3. a kind of induced voltage absorption plant according to claim 2, it is characterized in that, described A phase anti-misoperation control circuit structure is, the input coil of transformer T1 is connected with between the A phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of described transformer T1 has a1, b1, c1 tri-nodes, wherein a1 and b1 is two end nodes, c1 is the mid point of two end nodes, described node a1 is by diode D1 connected node d1, described node b1 is by diode D2 connected node d1, described node c1 ground connection, described node d1 be connected the resistance R2 and electric capacity C4 that are connected in series between ground, node d1 is successively by resistance R3, resistance R4 is connected earth terminal E with resistance R5, described resistance R3 is connected the source electrode of metal-oxide-semiconductor M1 with the node between resistance R4, described resistance R4 is connected the grid of metal-oxide-semiconductor M1 with the node between resistance R5, the grounded drain of described metal-oxide-semiconductor M1, the coil of relay switch K1 is connected with between described node d1 and the source electrode of metal-oxide-semiconductor M1, between the A phase connection terminal that the plug-in strip of described relay switch K1 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the A phase connection terminal that the plug-in strip of described relay switch K1 is connected to switch characteristic instrument binding post Osc and electric capacity C1.
4. a kind of induced voltage absorption plant according to claim 2, it is characterized in that, described B phase anti-misoperation control circuit structure is, the input coil of transformer T2 is connected with between the B phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of described transformer T1 has a2, b2, c2 tri-nodes, wherein a2 and b2 is two end nodes, c2 is the mid point of two end nodes, described node a2 is by diode D3 connected node d2, described node b2 is by diode D4 connected node d2, node c2 ground connection, described node d2 be connected the resistance R22 and electric capacity C42 that are connected in series between ground, described node d2 is successively by resistance R32, resistance R42 is connected earth terminal E with resistance R52, described resistance R32 is connected the source electrode of metal-oxide-semiconductor M2 with the node between resistance R42, described resistance R42 is connected the grid of metal-oxide-semiconductor M2 with the node between resistance R52, the grounded drain of described metal-oxide-semiconductor M2, the coil of relay switch K2 is connected with between described node d2 and the source electrode of metal-oxide-semiconductor M2, between the B phase connection terminal that the plug-in strip of described relay switch K2 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the B phase connection terminal that the plug-in strip of described relay switch K2 is connected to switch characteristic instrument binding post Osc and electric capacity C2.
5. a kind of induced voltage absorption plant according to claim 2, it is characterized in that, described C phase anti-misoperation control circuit structure is, the input coil of transformer T3 is connected with between the C phase connection terminal of high-voltage conducting wires binding post Main and ground, the output winding of described transformer T3 has a3, b3, c3 tri-nodes, wherein a3 and b3 is two end nodes, c3 is the mid point of two end nodes, described node a3 is by diode D5 connected node d3, described node b3 is by diode D6 connected node d3, described node c3 ground connection, described node d3 be connected the resistance R23 and electric capacity C43 that are connected in series between ground, described node d3 is successively by resistance R33, resistance R43 is connected earth terminal E with resistance R53, described resistance R33 is connected the source electrode of metal-oxide-semiconductor M3 with the node between resistance R43, described resistance R43 is connected the grid of metal-oxide-semiconductor M3 with the node between resistance R53, the grounded drain of described metal-oxide-semiconductor M3, the coil of relay switch K3 is connected with between described node d3 and the source electrode of metal-oxide-semiconductor M3, between the C phase connection terminal that the plug-in strip of described relay switch K3 is connected to switch characteristic instrument binding post Osc and threephase switch SW, between the C phase connection terminal that the plug-in strip of described relay switch K3 is connected to switch characteristic instrument binding post Osc and electric capacity C3.
6., according to the arbitrary described a kind of induced voltage absorption plant of claim 1-5, it is characterized in that, described low tension capacitance is 0.1 μ F, and the resistance of described resistance R1 is 300 Ω.
7., based on an induced voltage absorption process for the arbitrary described device of claim 1-6, it is characterized in that, comprise step:
1), by wire, by switch characteristic instrument binding post Osc and the main fracture expanding channels of switch characteristic instrument, during connection, A phase, B phase and C mutual reinforcement between connect one to one;
2), by wire, be connected by high-voltage conducting wires binding post Main with wire, during connection, A phase, B phase and C mutual reinforcement between connect one to one;
3), by wire, by earth terminal E ground connection, the ground short circuit plate of earthed switch is removed;
4), utilize switch characteristic instrument measurement characteristics, during measurement, threephase switch SW separating brake, measure after terminating, threephase switch SW closes a floodgate.
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Cited By (1)
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|---|---|---|---|---|
| CN107332543A (en) * | 2016-04-28 | 2017-11-07 | 中兴通讯股份有限公司 | The protection circuit and system of a kind of electronic contactor |
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