CN104868207A - Back gold deposition method of passive microstrip circuit board - Google Patents

Back gold deposition method of passive microstrip circuit board Download PDF

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Publication number
CN104868207A
CN104868207A CN201510194337.5A CN201510194337A CN104868207A CN 104868207 A CN104868207 A CN 104868207A CN 201510194337 A CN201510194337 A CN 201510194337A CN 104868207 A CN104868207 A CN 104868207A
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China
Prior art keywords
passive
microstrip circuit
gold
passive microstrip
circuit
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Pending
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CN201510194337.5A
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Chinese (zh)
Inventor
陈晓娟
袁婷婷
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority to CN201510194337.5A priority Critical patent/CN104868207A/en
Publication of CN104868207A publication Critical patent/CN104868207A/en
Pending legal-status Critical Current

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Abstract

The invention brings forward a back gold deposition method of a passive microstrip circuit board. The method comprises the following steps: a, providing a passive microstrip circuit board to be deposited with gold at a back surface; b, designing a layout for performing back gold deposition on the passive microstrip circuit board, wherein the pattern of the layout is an area where a blocking capacitance line is disposed in the passive microstrip circuit board; and c, performing the back gold deposition on the passive microstrip circuit board by taking the layout as a mask, wherein a back gold area is an area apart from the area where the blocking capacitance line is disposed in the passive microstrip circuit board. According to the invention, through isolating a grounding base plate between microstrip lines, i.e., the back gold portion of a passive substrate, the coupling effect of microwave signals is effectively inhibited, introduction of more parasitic parameters in a circuit is avoided, and the performance of a broadband microwave power module is finally improved.

Description

A kind of Passive Microstrip Circuit backboard gold method
Technical field
The present invention relates to microwave circuit field, concrete, the present invention relates to a kind of Passive Microstrip Circuit backboard gold method.
Technical background
In radar transmitter system, satellite communication and various communication and navigation electronic warfare system, extensively adopt microwave broadband power amplifier.In order to make electronic warfare system rapid conversion operating frequency at any time to reach the object of gaining mastery over the enemy, require that the operating frequency of system covers the whole frequency range of enemy's electronic system.Broadband can the work of entertaining be the important technology feature of electronic warfare system.The bandwidth of operation that the electronic station of radar frequency band requires is mainly 1-18GHz at present, until 40GHz, expands to more than 100GHz in the future.For the bandwidth performance requirement of more than many times to ten octaves, microwave hybrid integrated circuit is helpless, most employing MMIC microwave monolithic integrated circuit has come, Here it is, and ultra-wideband microwave power model makes, although use MMIC to make the usage quantity of device greatly reduce, but due to each circuit element interconnect cause ghost effect, coupling effect and microwave crosstalk, the bandwidth performance of wideband circuit and stability are all restricted, cause wide-band microwave power model performance to meet with bottleneck, be difficult to increase.
At present when the wide-band microwave power model based on MMIC monolithic integrated microwave circuit is applied to microwave frequency band, due to high-frequency microwave signal and frequency low exchange or direct current signal has significant difference, there are some coupling effects caused by microwave signal radiation, and along with the raising of frequency, this effect will be more and more large on the impact of circuit performance, make wideband circuit Theoretical Design larger with actual gap of debugging.
In broadband microwave circuits, microstrip line, as element connecting line each other, plays impedance simultaneously and connects the two-stage even effect of multi-mode microwave monolithic integrated circuit, needed the isolation of electric capacity, the tasks such as the superposition of gain.Microstrip line by conductor belt, dielectric material and base plate three part form, the usual ground connection of base plate is to reduce electromagnetic field leakage and microwave signal radiation loss.Although the geometry of microstrip line is also uncomplicated, its electromagnetic field is but quite complicated.Gold is all carried on the back as ground connection base plate in the usual passive base board back side, but the microstrip line ground connection base plate being positioned at circuit element both sides like this will link together, and can cause the coupling effect of microwave signal, microwave circuit isolation be reduced, introduce electromagnetic crosstalk.
Summary of the invention
For the problems referred to above, the present invention proposes a kind of Passive Microstrip Circuit backboard gold method, ground connection base plate between microstrip line and passive base board are carried on the back golden partial partition, thus effectively suppress the coupling effect of microwave signal, avoid in circuit, introducing more parasitic parameter, final raising wide-band microwave power model performance.Concrete, the method comprises:
A., the Passive Microstrip Circuit plate waiting to carry on the back gold is provided;
B. be designed for the domain carrying out carrying on the back gold to described Passive Microstrip Circuit plate, the figure of described domain is the region at capacitance line place in this Passive Microstrip Circuit plate;
C. with described domain for mask, to described Passive Microstrip Circuit plate carry out the back of the body gold; Wherein, carrying on the back golden region is other regions in this Passive Microstrip Circuit plate except the region at capacitance line place.
Wherein, described Passive Microstrip Circuit plate comprises:
Monolithic integrated microwave circuit, for realizing the electrical functions of Passive Microstrip Circuit plate;
Microstrip line, for connecting adjacent monolithic integrated microwave circuit;
Passive base board, for carrying described microstrip line;
Capacitance, for eliminating the direct current signal between monolithic integrated microwave circuit;
Metallic cavity, for carrying all parts in Passive Microstrip Circuit plate.
Wherein, in step c, the method for described Passive Microstrip Circuit plate being carried out carrying on the back to gold comprises:
D. at described Passive Microstrip Circuit back coating photoresist;
E. for described Passive Microstrip Circuit plate is carried out carry on the back gold domain be mask, by described photoetching offset plate figure;
F. at described Passive Microstrip Circuit back electrogilding;
G. photoresist is removed.
Wherein, after step e, also step h is comprised: form furling plating metal in described Passive Microstrip Circuit back.
Wherein, the method for furling plating metal is formed for sputtering.
According to the technical scheme that the present invention proposes, selectively back of the body gold is carried out to microstrip line passive base board, ground connection base plate between microstrip line and passive base board are carried on the back golden partial partition, thus effectively suppress the coupling effect of microwave signal, avoid in circuit, introducing more parasitic parameter, final stability and the power characteristic improving wide-band microwave amplification module.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is Passive Microstrip Circuit plate structure schematic diagram in an embodiment provided by the invention;
Fig. 2 (a) and 2 (b) are microstrip line construction schematic diagram in Passive Microstrip Circuit plate in an embodiment provided by the invention;
Fig. 3 (a) and 3 (b) are for carrying on the back golden structural representation in Passive Microstrip Circuit plate front and the back side in an embodiment provided by the invention;
Fig. 4 (a)-4 (f) carries on the back golden flow chart for a Passive Microstrip Circuit back provided by the invention;
Fig. 5 be in an embodiment in the present invention back of the body gold complete after the vertical view of described passive base board circuit board.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
The present invention proposes a kind of Passive Microstrip Circuit backboard gold method, ground connection base plate between microstrip line and passive base board are carried on the back golden partial partition, thus effectively suppress the coupling effect of microwave signal, avoid in circuit, introducing more parasitic parameter, final raising wide-band microwave power model performance.For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the invention provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.It should be noted that parts illustrated in the accompanying drawings are not necessarily drawn in proportion.Present invention omits the description of known assemblies and treatment technology and process to avoid unnecessarily limiting the present invention.
Be Passive Microstrip Circuit plate structure schematic diagram in an embodiment provided by the invention with reference to figure 1, Fig. 1.As shown in Figure 1, described Passive Microstrip Circuit plate comprises: monolithic integrated microwave circuit 103, for realizing the electrical functions of Passive Microstrip Circuit plate; Microstrip line 105, for connecting adjacent monolithic integrated microwave circuit; Passive base board 102, for carrying described microstrip line; Capacitance 104, for eliminating the direct current signal between monolithic integrated microwave circuit; Metallic cavity 101, for carrying all parts in Passive Microstrip Circuit plate.This Passive Microstrip Circuit plate can be used in any wide-band microwave power stage gang mould block.Wherein, monolithic integrated microwave circuit 103 and passive base board are welded on metallic cavity by solder, and capacitance 104 attaches to the effect reaching isolated DC point in the middle of microstrip line 105 by conducting resinl.Passive base board is attached in metallic cavity 101 by conducting resinl, in fixing by screw.In microwave link, use bonding line to be connected with microstrip line 105 by monolithic integrated microwave circuit 103, finally become cascaded structure.
As shown in Figure 2, wherein, microstrip line 105 is made up of conductor belt 201, dielectric material 202 and base plate 203 3 part, and the usual ground connection of base plate is to reduce electromagnetic field leakage and microwave signal radiation loss.Usual passive base board back of circuit board all carries on the back the ground connection base plate of gold as microstrip line, as shown in Fig. 2 (a), but the microstrip line ground connection base plate being positioned at circuit element both sides like this will link together, the coupling effect of microwave signal can be caused, microwave link isolation is reduced, form electromagnetic crosstalk, easy self-oscillation.So, the present invention selectively carries out back of the body gold to passive base board circuit board, ground connection base plate between microstrip line and passive base board are carried on the back golden partial partition, as shown in Fig. 2 (b), thus effectively suppress the coupling effect of microwave signal, avoid in circuit, introducing more parasitic parameter, the final stability improving wide-band microwave power model.
The specific design flow process of Passive Microstrip Circuit backboard gold process of the present invention is as follows:
1. select suitable microwave monolithic integrated circuit MMIC PA according to index request, mainly pay close attention to the parameters such as its power output, gain and input and output standing wave; Select microwave link topological structure according to index request, namely adopt cascaded structure, need 2 grades, 3 grades even multi-stage power amplifier to touch the mark requirement; In one embodiment of the invention, as shown in Figure 1,2 stage power amplifiers are needed.
2. the microwave line circuit plate of AutoCAD tool design passive base board is used according to the topological structure of selected microwave broadband module.
3. according to the front topological structure of the microwave line circuit plate of passive base board, selectively back of the body gold is carried out to the microwave line circuit plate of passive base board, do not carry on the back gold process by the ground connection baseplate zone between microstrip line, final realization is applied to the passive base board microstrip circuitry backboard gold method of wide-band microwave power model.
4. test analysis.
Experiment finds, in passive base board microstrip circuitry plate, selectively back of the body gold is carried out to passive base board microstrip circuitry plate, ground connection base plate between microstrip line and circuit printing plate are carried on the back golden partial partition, its structure as shown in Figure 3, be the back of the body gold structure corresponding with passive base board microstrip circuitry plate front topological structure, gold process is not carried on the back to the region at capacitance place, effectively can suppress the coupling effect of microwave signal, avoid introducing more parasitic parameter in circuit, final raising wide-band microwave power model stability.Through experimental verification, adopt back of the body gold method proposed by the invention, make microwave broadband power module circuit equal energy steady operation in DC-60GHz frequency range, produce without self-excitation phenomena, meet the gain superposition of power link, achieve the performance of microwave amplification module.
Concrete back of the body gold flow process as shown in Figure 4, first, provide the passive base board microstrip circuitry plate 401 needing back of the body gold, and as shown in Fig. 4 (a), the front mask 402 of this passive base board microstrip circuitry plate is protected, avoids it sustain damage in the golden process of the back of the body and pollute; Secondly, as shown in Fig. 4 (b), at this passive base board microstrip circuitry back coating photoresist 403, and by graphical for photoresist 403.
Concrete, comprised the following steps by described photoetching offset plate figure: first, be designed for the domain carrying out carrying on the back gold to described Passive Microstrip Circuit plate, the figure of described domain is the region at capacitance line place in this Passive Microstrip Circuit plate; Secondly, described domain is made as mask plate, and with described mask plate described photoresist 4.3 is developed and the step such as etching, by the Graphic transitions on mask plate on photoresist, as shown in Fig. 4 (c); Wherein, after photoetching completes, not by other regions that the region that photoresist 4.3 covers is in this Passive Microstrip Circuit plate except the region at capacitance line place on circuit board 401.
Next, furling plating metal 404 is formed, as shown in Fig. 4 (d) at described passive base board microstrip circuitry plate 401 back side; The effect of described furling plating metal 404 is the Seed Layer forming electrogilding in subsequent step.Wherein, the method for furling plating metal is formed for sputtering.Next, at described Passive Microstrip Circuit back electrogilding 405, as shown in Fig. 4 (e), in the process, due to the existence of photoresist 403, by photoresist 403 furling plating metal 404 on the region that covers and gold 405 be all formed at above photoresist 403.Finally, as shown in Fig. 4 (f), remove photoresist 403, meanwhile, the furling plating metal 404 and golden 405 be positioned at above described photoresist 403 also peels off thereupon, completes selectivity back of the body gold.
Fig. 5 be in an embodiment in the present invention back of the body gold complete after the vertical view of described passive base board circuit board, can find out, unlike the prior art, carry on the back golden region and all do not cover, but optionally covering board back, expose the ground connection base plate between capacitance.By the present invention, technical scheme is proposed, selectively back of the body gold is carried out to passive base board circuit board, by the back of the body of the ground connection base plate between capacitance and passive base board gold partial partition, the isolation of microwave broadband power circuit is significantly improved, module achieves 2 grades of circuit even cascade of 3 grades of power links, and circuit performance is stablized, and produces without self-excitation phenomena, suppress the coupling effect of microwave signal, and then improve the performance of wide-band microwave power model.
Although describe in detail about example embodiment and advantage thereof, being to be understood that when not departing from the protection range of spirit of the present invention and claims restriction, various change, substitutions and modifications can being carried out to these embodiments.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
In addition, range of application of the present invention is not limited to the technique of the specific embodiment described in specification, mechanism, manufacture, material composition, means, method and step.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique existed at present or be about to develop, mechanism, manufacture, material composition, means, method or step later, wherein their perform the identical function of the corresponding embodiment cardinal principle that describes with the present invention or obtain the identical result of cardinal principle, can apply according to the present invention to them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection range.

Claims (5)

1. a Passive Microstrip Circuit backboard gold method, is characterized in that, comprising:
A., the Passive Microstrip Circuit plate waiting to carry on the back gold is provided;
B. be designed for the domain carrying out carrying on the back gold to described Passive Microstrip Circuit plate, the figure of described domain is the region at capacitance line place in this Passive Microstrip Circuit plate;
C. with described domain for mask, to described Passive Microstrip Circuit plate carry out the back of the body gold; Wherein, carrying on the back golden region is other regions in this Passive Microstrip Circuit plate except the region at capacitance line place.
2. Passive Microstrip Circuit backboard gold method according to claim 1, is characterized in that, described Passive Microstrip Circuit plate comprises:
Monolithic integrated microwave circuit, for realizing the electrical functions of Passive Microstrip Circuit plate;
Microstrip line, for connecting adjacent monolithic integrated microwave circuit;
Passive base board, for carrying described microstrip line;
Capacitance, for eliminating the direct current signal between monolithic integrated microwave circuit;
Metallic cavity, for carrying all parts in Passive Microstrip Circuit plate.
3. Passive Microstrip Circuit backboard gold method according to claim 1, is characterized in that, in step c, the method for described Passive Microstrip Circuit plate being carried out carrying on the back to gold comprises:
D. at described Passive Microstrip Circuit back coating photoresist;
E. for described Passive Microstrip Circuit plate is carried out carry on the back gold domain be mask, by described photoetching offset plate figure;
F. at described Passive Microstrip Circuit back electrogilding;
G. photoresist is removed.
4. Passive Microstrip Circuit backboard gold method according to claim 3, is characterized in that, after step e, also comprise step h: form furling plating metal in described Passive Microstrip Circuit back.
5. Passive Microstrip Circuit backboard gold method according to claim 4, is characterized in that, forms the method for furling plating metal for sputtering.
CN201510194337.5A 2015-04-22 2015-04-22 Back gold deposition method of passive microstrip circuit board Pending CN104868207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510194337.5A CN104868207A (en) 2015-04-22 2015-04-22 Back gold deposition method of passive microstrip circuit board

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510194337.5A CN104868207A (en) 2015-04-22 2015-04-22 Back gold deposition method of passive microstrip circuit board

Publications (1)

Publication Number Publication Date
CN104868207A true CN104868207A (en) 2015-08-26

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040075967A1 (en) * 2002-10-21 2004-04-22 Hrl Laboratories, Llc Variable capacitance membrane actuator for wide band tuning of microstrip resonators and filters
CN101662885A (en) * 2008-08-28 2010-03-03 中国科学院微电子研究所 Method for performing gold backing on printed circuit board of Ku waveband microstrip type switch circuit
JP2010258868A (en) * 2009-04-27 2010-11-11 New Japan Radio Co Ltd High-frequency oscillator
CN103346094A (en) * 2013-06-21 2013-10-09 中国电子科技集团公司第四十一研究所 Etching method of microwave membrane circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040075967A1 (en) * 2002-10-21 2004-04-22 Hrl Laboratories, Llc Variable capacitance membrane actuator for wide band tuning of microstrip resonators and filters
CN101662885A (en) * 2008-08-28 2010-03-03 中国科学院微电子研究所 Method for performing gold backing on printed circuit board of Ku waveband microstrip type switch circuit
JP2010258868A (en) * 2009-04-27 2010-11-11 New Japan Radio Co Ltd High-frequency oscillator
CN103346094A (en) * 2013-06-21 2013-10-09 中国电子科技集团公司第四十一研究所 Etching method of microwave membrane circuit

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