CN104867868A - Method of transversely growing nanonet circuit without catalyst - Google Patents
Method of transversely growing nanonet circuit without catalyst Download PDFInfo
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- CN104867868A CN104867868A CN201510291933.5A CN201510291933A CN104867868A CN 104867868 A CN104867868 A CN 104867868A CN 201510291933 A CN201510291933 A CN 201510291933A CN 104867868 A CN104867868 A CN 104867868A
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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Abstract
The invention provides a method of transversely growing a nanonet circuit without a catalyst, which can be applied to the field of semiconductors. The method comprises steps: 1) a silicon substrate whose surface is provided with periodic nano silicon pillars and a ship for accommodating chemical reactants are provided; 2) one face, provided with the periodic nano silicon pillars, of the silicon substrate is placed towards the ship for accommodating the chemical reactants; 3) a high-temperature chemical vapor deposition is adopted for preparing a transversely-growing zinc oxide nanonet at an edge corner of the side surface of each nano silicon pillar. The growing surface of the silicon electrode substrate whose surface is prepared with the periodic nano pillars is downwardly placed on the ship for accommodating chemical reactants, the transversely-growing zinc oxide nanonets are then controlled to form a nanonet bridge circuit, a gold-plating film does not need to serve as the catalyst, steps are saved, and the cost is reduced.
Description
Technical field
The present invention relates to one, particularly relate to a kind of method of catalyst-free cross growth nanowire mesh circuit.
Background technology
Scientific research shows, nanowire mesh can improve specific area and the electric property of semi-conducting material, therefore is also constantly studying for the research how preparing nanowire mesh.The existing technology about preparing nanowire mesh mainly contains two kinds:
One, in document 1 disclosed in (specifically seeing the end of writing), disclose a kind of method utilizing the method for reprocessing to prepare horizontal single armed carbon nano-tube network (Carbon nanotube nanonets) circuit, can see Fig. 1, the method is surface of silicon nanotube being distributed in silicon dioxide, then utilize the technical method of method metal-coated membrane as grid, drain electrode, gate electrode of uv-exposure photoetching, prepare the triode electronic device based on carbon nano-tube network.
Although said method can obtain nanowire mesh, there is certain defect in it.The shortcoming of above-mentioned prior art one is: need in photoetching processes such as nanowire surface whirl coating, uv-exposures in preparation technology, complex process, the multi-step process of process, the density of the nano wire comprised between two grids and drain electrode is difficult to control, and cannot ensure the homogeneity of the nanometer netting twine that the nano net electronic device of each preparation comprises.
They are two years old, in relate art literature (2) disclosed in, disclosing one utilizes the method for electrostatic spinning (electro-netting) to prepare the polyacrylic acid nano net (polyacrylic acid nano-nets) of class soap blister, and it has huge specific area.
Although nanowire mesh obtained in said method two has larger specific area, need to add various additive in preparation technology, but also need various soda acid chemical environment, thus be unfavorable for the application of silica-based nanometer electronic device.
In sum, via the nanowire mesh prepared by prior art, not only comparatively complicated in preparation technology, step is various, needs various additive, and for the density of nanometer netting twine and all bad control of last homogeneity in manufacturing process.Therefore, necessary this to be improved.
Attached: existing open source literature:
Document 1, [Ninad Pimparkar and Muhammad Ashraful Alam, IEEE ELECTRON DEVICELETTERS, VOL.29, NO.9,1036-1039,2008];
Document 2, [Shangbin Yang et al, Nanoscale, 2011,3,564 – 568].
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of method of catalyst-free cross growth nanowire mesh circuit, for solving the nanowire mesh prepared by prior art, not only comparatively complicated in preparation technology, step is various, need various additive, and for the problem of the density of nanometer netting twine and all bad control of last homogeneity in manufacturing process.
For achieving the above object and other relevant objects, the invention provides following solution:
A method for catalyst-free cross growth nanowire mesh circuit, described method comprises: 1) provide a surface preparation to have the silicon substrate of periodically nano-silicon post and supply to hold the boat of chemical reactant; 2) one of periodically nano-silicon post there is is to place facing to the boat filling chemical reactant described silicon substrate preparation; 3) high temperature chemical vapor deposition method is adopted to prepare the zinc-oxide nano gauze of cross growth in edges and corners, each nano-silicon post side.
As the optimal way of the method for above-mentioned catalyst-free cross growth nanowire mesh circuit, the step 3 in described method) specifically comprise: 3-1) boat and silicon substrate placed thereon that fill chemical reactant are together put into a high-temperature tubular vacuum furnace; 3-2) maintain described high-temperature tubular vacuum furnace be vacuum and vacuum tube is wherein heated to 900-1000 DEG C; 3-3) pass into 100-150sccm inertia current-carrying gas and 1-2sccm oxygen, and control pressure to 300mbar; 3-4) keep growth time to be 30-35 minute, then allow described high-temperature tubular vacuum furnace Temperature fall, to prepare the zinc-oxide nano gauze of cross growth in the edges and corners, nano-pillar side of silicon substrate.
Further optimization preferably, described inertia current-carrying gas is nitrogen or argon gas.
Further optimization preferably, the volume flow ratio of described inertia current-carrying gas and oxygen is 100:1.5.
As the above-mentioned method of catalyst-free cross growth nanowire mesh circuit and the further optimization of preferred version thereof, described chemical reactant is oxide powder and zinc and graphite powder.
As the optimal way of the method for above-mentioned catalyst-free cross growth nanowire mesh circuit, described periodicity nano-silicon post is the multiple polygon silicon posts of etching forming on described silicon substrate.
Further optimization preferably, the height of each described polygon silicon post is 500-800 μm, and the mutual spacing range of described multiple polygon silicon post is 50-200 μm.
As mentioned above, of the present invention have following beneficial effect: the boat that surface preparation has the silicon electrode substrate growth of cycle nano-pillar to face down to be placed on and to fill chemical reactant by the present invention is placed, and then cross growth nanowire mesh formation nano net bridgt circuit can be controlled, do not need gold-plated film as catalyst, save operation and reduce costs.
Accompanying drawing explanation
Fig. 1 is shown as this and utilizes the method for reprocessing to prepare the design sketch of horizontal single armed carbon nano-tube network circuit.
Fig. 2 is shown as the realization flow figure of the method for a kind of catalyst-free cross growth nanowire mesh circuit provided by the invention.
Fig. 3 is shown as the embodiment flow chart in above-mentioned Fig. 1 step S50.
Drawing reference numeral explanation
S10-S50 method step
S501-S507 method step
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.It should be noted that, when not conflicting, the feature in following examples and embodiment can combine mutually.
It should be noted that, the diagram provided in following examples only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Before method about catalyst-free cross growth nanowire mesh circuit provided by the present invention is first specifically provided, inventor additionally provides a kind of method (referring to CN103966662A) of locating cross growth zinc oxide nanowire on silicon electrode, the method discloses a kind of method that can obtain separately the zinc oxide nanowire of cross growth on silicon electrode, inventor on its basis, again through experiment and research, again propose a kind of method of catalyst-free cross growth nanowire mesh circuit, detailed protocol please refer to following examples.
Embodiment 1
Refer to Fig. 2, the method for a kind of catalyst-free cross growth nanowire mesh circuit provided by the invention, the method at least comprises the following steps:
Step S10, provides a surface preparation to have the silicon substrate of periodically nano-silicon post and supply to hold the boat of chemical reactant;
Step S30, has one of periodically nano-silicon post to place facing to the boat filling chemical reactant described silicon substrate preparation;
Step S50, adopts high temperature chemical vapor deposition method to prepare the zinc-oxide nano gauze of cross growth in edges and corners, each nano-silicon post side.
Particularly, in above-mentioned steps S10, provide one of silicon substrate on the surface preparation have periodically nano-silicon post, this periodicity nano-silicon post is specially the multiple polygon silicon posts etched on described silicon substrate, described polygon silicon post both can be square column or the rectangle cylinder of rule, also can be irregular polygon cylinder, such as trapezoid cylinder, triangle cylinder etc.And, the end face of same silicon substrate also can comprise multiple different polygon silicon post, or only include multiple a kind of polygon silicon post.That is to say, as long as described periodicity nano-pillar has corner angle, and pay no attention to its concrete shape.
In further detail, although have various selection for the shape of periodicity nano-pillar, the spacing range between each polygon silicon post in described periodicity nano-pillar has a definite limitation, is generally all good by spacing anti-counterfeiting design at 50-200 μm.If by unsatisfactory for the narrow so preparation-obtained nano wire effect of line space design, but also need more strict or the better reaction condition of specification, be so unfavorable for the condition of simple preparation; And if spacing is excessive, so likely by unavailable nanometer netting twine, and preparation time also can increase accordingly.
Further, the height of each described polygon silicon post be generally 500-800 μm all good, if excessive height so reacting gas effectively can not contact with periodicity nano-pillar and reflect, and then cause obtaining nanometer netting twine; And if highly too low, be so also unfavorable for that reacting gas passes through glibly, thus also cannot obtain longer horizontal nano wire.
Further, in above-mentioned steps S30, facing down to be placed on by surface preparation there being the silicon electrode substrate growth of cycle nano-pillar fills on the boat of chemical reactant, cross growth nanowire mesh can be controlled and form nano net bridgt circuit, do not need gold-plated film as catalyst, save operation and reduce costs.
Further, Fig. 3 is referred to., in described step S50, utilize high temperature chemical vapor intermediate processing to prepare the concrete grammar of zinc-oxide nano gauze to be:
Step S501, together puts into a high-temperature tubular vacuum furnace by the boat and silicon substrate placed thereon that fill chemical reactant;
Step S503, maintains described high-temperature tubular vacuum furnace and is vacuum and vacuum tube is wherein heated to 900-1000 DEG C, usually, is heated to about 950 DEG C for all good;
Step S505, passes into 100-150sccm inertia current-carrying gas and 1-2sccm oxygen, and controls pressure to 300mbar, usually, the inert gas such as nitrogen or argon gas can be adopted as described current-carrying gas;
Step S507, maintenance growth time is 30-35 minute, then allows described high-temperature tubular vacuum furnace Temperature fall, to prepare the zinc-oxide nano gauze of cross growth in the edges and corners, nano-pillar side of silicon substrate.
Method in above-described embodiment 1 provided by the invention, by there is no plating catalyst, the silicon substrate that is carved with cycle silicon nano-pillar is towards on the boat of chemical reactant, the object of cross growth nanowire mesh is achieved in the edges and corners, side of silicon substrate nano-pillar, this kind of method can utilize the multiple silicon electrode preparations of nanowire mesh bridge joint nanometric circuit truly, and the preparation of nano net circuit is carried out on the silicon microelectrode of etching, provide a succinct method for realizing nano net circuit truly and nanometer electronic device.
Can know from above-mentioned execution mode, key point of the present invention be not metal-coated membrane, surface etch has the silicon electrode aufwuchsplate of period profile nano-pillar to be directly placed on towards chemical reactant to fill on the boat of reactant, carry out chemical reaction.
Embodiment 2
Further, the present embodiment is according to the zinc-oxide nano gauze being prepared cross growth by above-described embodiment 1 method in edges and corners, each nano-silicon post side.Obtain zinc-oxide nano gauze, the chemical reactant so held in boat is oxide powder and zinc and graphite powder, and using nitrogen as inertia current-carrying gas, then according to the preparation process provided in above-described embodiment 1, can obtain zinc-oxide nano gauze.
Preferably, in the present embodiment, the volume flow ratio of described inertia current-carrying gas and oxygen is set to 100:1.5, and in holding tube, nitrogen and oxygen atmosphere pressure, at 300mbar, thus can obtain zinc-oxide nano gauze quickly.
In sum, principle of the present invention is, according to crystal growth principle, because the combination of electrode rim edges and corners can be low, utilization is placed the silicon electrode aufwuchsplate that cycle nano-pillar is carved with on surface towards chemical reaction raw material, and pass through controlled atmospher flow distribution thus realize only in nano-pillar electrode rim cross growth nano net bridged electrodes, not in epontic result, decrease on process electrode surface and utilize the unnecessary zinc oxide nanowire grown during conventional growth method.Innovative point of the present invention is: boat surface preparation had the silicon electrode substrate growth of cycle nano-pillar to face down to be placed on and to fill chemical reactant being placed, and then cross growth nanowire mesh formation nano net bridgt circuit can be controlled, do not need gold-plated film as catalyst, save operation and reduce costs.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (7)
1. a method for catalyst-free cross growth nanowire mesh circuit, is characterized in that, described method comprises:
1) a surface preparation is provided to have the silicon substrate of periodically nano-silicon post and supply to hold the boat of chemical reactant;
2) one of periodically nano-silicon post there is is to place facing to the boat filling chemical reactant described silicon substrate preparation;
3) high temperature chemical vapor deposition method is adopted to prepare the zinc-oxide nano gauze of cross growth in edges and corners, each nano-silicon post side.
2. the method for catalyst-free cross growth nanowire mesh circuit according to claim 1, is characterized in that: the step 3 in described method) specifically comprise:
3-1) boat and silicon substrate placed thereon that fill chemical reactant are together put into a high-temperature tubular vacuum furnace;
3-2) maintain described high-temperature tubular vacuum furnace be vacuum and vacuum tube is wherein heated to 900-1000 DEG C;
3-3) pass into 100-150sccm inertia current-carrying gas and 1-2sccm oxygen, and control pressure to 300mbar;
3-4) keep growth time to be 30-35 minute, then allow described high-temperature tubular vacuum furnace Temperature fall, to prepare the zinc-oxide nano gauze of cross growth in the edges and corners, nano-pillar side of silicon substrate.
3. the method for catalyst-free cross growth nanowire mesh circuit according to claim 2, is characterized in that: described inertia current-carrying gas is nitrogen or argon gas.
4. the method for catalyst-free cross growth nanowire mesh circuit according to claim 2, is characterized in that: the volume flow ratio of described inertia current-carrying gas and oxygen is 100:1.5.
5. the method for the catalyst-free cross growth nanowire mesh circuit according to any one of claim 1-4, is characterized in that: described chemical reactant is oxide powder and zinc and graphite powder.
6. the method for catalyst-free cross growth nanowire mesh circuit according to claim 1, is characterized in that: described periodicity nano-silicon post is the multiple polygon silicon posts of etching forming on described silicon substrate.
7. the method for catalyst-free cross growth nanowire mesh circuit according to claim 5, is characterized in that: the height of each described polygon silicon post is 500-800 μm, and the mutual spacing range of described multiple polygon silicon post is 50-200 μm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845714A (en) * | 2016-02-27 | 2016-08-10 | 黄辉 | Nanowire device based on bridging growth and manufacturing method thereof |
| CN109490262A (en) * | 2018-10-23 | 2019-03-19 | 中国科学院重庆绿色智能技术研究院 | Microcystin sensor and preparation method, application based on zinc oxide nanowire |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1727524A (en) * | 2004-11-30 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | The method for preparing low temperature catalyst-free needle-like Zn0 nano wire |
| CN101281133A (en) * | 2008-05-12 | 2008-10-08 | 中国科学院合肥智能机械研究所 | Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array |
| CN103296141A (en) * | 2013-06-03 | 2013-09-11 | 厦门大学 | Method for producing dendritic heterojunction nanowire array structural materials |
| CN103303967A (en) * | 2012-03-08 | 2013-09-18 | 国家纳米科学中心 | Tower-shaped layered zinc oxide nanometer rod, and preparation method and application thereof |
| CN103966662A (en) * | 2014-04-01 | 2014-08-06 | 中国科学院重庆绿色智能技术研究院 | Method for positioning transversely-growing zinc oxide nanowires on silicon electrode |
-
2015
- 2015-06-01 CN CN201510291933.5A patent/CN104867868B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1727524A (en) * | 2004-11-30 | 2006-02-01 | 中国科学院长春光学精密机械与物理研究所 | The method for preparing low temperature catalyst-free needle-like Zn0 nano wire |
| CN101281133A (en) * | 2008-05-12 | 2008-10-08 | 中国科学院合肥智能机械研究所 | Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array |
| CN103303967A (en) * | 2012-03-08 | 2013-09-18 | 国家纳米科学中心 | Tower-shaped layered zinc oxide nanometer rod, and preparation method and application thereof |
| CN103296141A (en) * | 2013-06-03 | 2013-09-11 | 厦门大学 | Method for producing dendritic heterojunction nanowire array structural materials |
| CN103966662A (en) * | 2014-04-01 | 2014-08-06 | 中国科学院重庆绿色智能技术研究院 | Method for positioning transversely-growing zinc oxide nanowires on silicon electrode |
Non-Patent Citations (1)
| Title |
|---|
| 王伶俐: "生长于硅纳米孔柱阵列衬底上氧化锌的场发射和气体传感器性能研究", 《中国博士学位论文全文数据库》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845714A (en) * | 2016-02-27 | 2016-08-10 | 黄辉 | Nanowire device based on bridging growth and manufacturing method thereof |
| CN105845714B (en) * | 2016-02-27 | 2019-12-03 | 黄辉 | A kind of nano-wire devices and preparation method thereof based on bridge joint growth |
| CN109490262A (en) * | 2018-10-23 | 2019-03-19 | 中国科学院重庆绿色智能技术研究院 | Microcystin sensor and preparation method, application based on zinc oxide nanowire |
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