CN104866834A - Capacitive fingerprint sensor and fingerprint imaging module - Google Patents
Capacitive fingerprint sensor and fingerprint imaging module Download PDFInfo
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- CN104866834A CN104866834A CN201510291763.0A CN201510291763A CN104866834A CN 104866834 A CN104866834 A CN 104866834A CN 201510291763 A CN201510291763 A CN 201510291763A CN 104866834 A CN104866834 A CN 104866834A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
Abstract
A capacitive fingerprint sensor and a fingerprint imaging module are provided, comprising: a base board; and pixel units that are on a surface of the base board and are arranged in an array, wherein each pixel unit comprises an amorphous switching element and a first pole plate connected to the amorphous switching element, and the first pole plate is used to form a capacitor structure with a fingerprint and output an electrical signal when the amorphous switching element is conducted. According to the invention, the amorphous switching element and the first pole plate connected to the amorphous switching element are arranged, the electrical signal with fingerprint information are obtained by using the first pole plate, and a fingerprint image is obtained according to the electrical signal. The amorphous switching element and the first pole plate are integrated by using an amorphous silicon technology, and a crystalline silicon technology in the prior art is avoided, so that element manufacturing process difficulty can be effectively reduced, process complexity is reduced, an element manufacturing yield is improved, and element manufacturing costs are reduced.
Description
Technical field
The present invention relates to fingerprint recognition field, particularly a kind of capacitive fingerprint sensing device and fingerprint imaging module.
Background technology
Fingerprint identification technology collects the fingerprint image of human body by fingerprint sensor, then with fingerprint recognition system in existing fingerprint imaging information compare, to realize identification.Because fingerprint has unchangeable, the feature such as uniqueness and portability, fingerprint identification technology is widely used in every field, such as: the field of safety check such as public security bureau, customs, the gate control system of building, and the consumer product area such as PC and mobile phone etc.
Current fingerprint sensor is mainly divided into optical fingerprint sensor and capacitive fingerprint sensing device.Wherein, the principle of the capacitive fingerprint sensing device in semiconductor fingerprint sensor is: the sensing face forming sensor by a large amount of pixel cell is a pole plate of electric capacity; Finger plaster is combined in sensing face, forms a pole plate of electric capacity.Uneven due to finger watch cortex, finger surface diverse location is different from the distance between sense plane.Between finger watch cortex and sense plane, form the electric capacity differed in size thus, according to the capacitance profile situation obtained, obtain the image of reaction finger print information.
With reference to figure 1, show the sensing schematic diagram of a kind of capacitive fingerprint sensing device in prior art.This sentences CMOS capacitive fingerprint sensing device is that example is described.
Wherein finger contacts with the sense plane 10 of sensor, and the fluctuating of finger watch cortex 11, makes the distance between finger watch cortex 11 different parts from described sense plane 10 different.Electric capacity c1, c2, c3 of being formed between described finger watch cortex 11 different parts and the sensing pole plate 13 forming in the pixel of sense plane 10 thus ... size be also different.By detecting described finger watch cortex 11 different parts electric capacity c1, c2, c3 ... size, obtain the distribution situation of electric capacity, the image of reaction finger print information can be obtained.
In order to detect described finger watch cortex 11 different parts electric capacity c1, c2, c3 ... size, the method of only depositing use is at present emitting radio frequency signal rf, described radiofrequency signal rf is communicated to the skin corium 14 with conductive capability through epidermal area, in skin corium 14, form planar transmit electric field, described planar transmit electric field is by electric capacity c1, c2, c3 of different size ... enter CMOS receiving circuit 15.Due to electric capacity c1, c2, c3 ... vary in size, therefore, the signal intensity of the planar transmit electric field that described CMOS receiving circuit 15 receives is also different, by detecting the signal of sense plane 10 different parts that described CMOS receiving circuit 15 receives, described electric capacity c1, c2, c3 can be obtained ... size distribution situation, thus also just can obtain reaction finger print information image.
With reference to figure 2, show the structural representation of a kind of capacitive fingerprint sensing device in prior art.
Sensing pole plate 23 and receiving circuit 25 are arranged at upper surface and the lower surface of chip 20 respectively, the sensing pole plate 23 of each pixel is connected by through hole 26 with corresponding receiving circuit 25, therefore receiving circuit 25 can be arranged with sensing substrate 23 in layering, so the area of sensing pole plate 23 can not be taken, the area of sensing pole plate 23 is made to reach maximum to improve the degree of accuracy that fingerprint image obtains.But because sensing pole plate 23 is connected with via through holes 26 between receiving circuit 25, so need to form through hole 26 in the process manufacturing corresponding capacitance formula fingerprint sensor, form the complex process of through hole 26, cost is higher.
With reference to figure 3, show the structural representation of another kind of capacitive fingerprint sensing device in prior art.In this capacitive fingerprint sensing device, sensing pole plate 33 and receiving circuit 35 are all arranged at the same face of chip 30, although can avoid the formation of through hole, can reduce costs, but receiving circuit 35 has tied up the area of sensing pole plate 33, be unfavorable for that fingerprint image obtains the raising of degree of accuracy.
But fingerprint sensor complex process of the prior art, cost is higher.
Summary of the invention
The problem that the present invention solves is to provide a kind of capacitive fingerprint sensing device and fingerprint imaging module, with Simplified flowsheet, reduces costs.
For solving the problem, the invention provides a kind of capacitive fingerprint sensing device, comprising:
Substrate;
Be positioned at the pixel cell that described substrate surface is arranged in array, described pixel cell comprises amorphous switching device, and described amorphous switching device comprises control end, first end and the second end, the conducting or block under described control end controls of described first end and the second end;
Described pixel cell also comprises the first pole plate be connected with described amorphous switching device first end, for forming capacitance structure with fingerprint, also for when described amorphous switch device conductive by electric signal transmission to the second end corresponding with the electric capacity of described capacitance structure, to export described electric signal.
Optionally, described substrate is glass substrate.
Optionally, described first plate material is metal or oxide conductor.
Optionally, described capacitive fingerprint sensing device also comprises: be positioned at drive wire in the row direction on described substrate, described drive wire is connected with the control end of described pixel cell amorphous switching device, for transmitting the start signal that can make described amorphous switch device conductive, described control end makes described amorphous switching device realize conducting when receiving described start signal; Be positioned at the signal wire along column direction on described substrate, described signal wire is connected with amorphous switching device second end of described pixel cell, for transmitting the described electric signal that described first pole plate obtains when described amorphous switch device conductive.
Optionally, described amorphous switching device comprises: be positioned at described substrate surface, the grid be connected with described drive wire, and described grid is the control end of described amorphous switching device; Cover the first insulation course of described substrate, described grid and described drive wire; Be formed at the semiconductor layer that described first surface of insulating layer is corresponding with described gate location; Be formed at described semiconductor layer surface, and be positioned at source electrode and the drain electrode of described grid both sides, described source electrode is the first end of the amorphous switching device be connected with described first pole plate, and described drain electrode is the second end of the amorphous switching device be connected with described signal wire.
Optionally, the semiconductor layer material of described amorphous switching device is amorphous silicon.
Optionally, described grid and described drive wire are same layer metal.
Optionally, described drain electrode and described signal wire are same layer metal.
Optionally, described source electrode and described first pole plate are same layer metal.
Optionally, described first pole plate is positioned on described first insulation course; Described pixel cell also comprises: the second insulation course covering amorphous switching device; Be positioned at described second surface of insulating layer for blocking the light shield layer of described amorphous switching device; Cover the protective seam on described light shield layer surface.
Optionally, described light shield layer also covers described first polar board surface, is electrically connected with between described first pole plate.
Optionally, described pixel cell also comprises: the second pole plate, and for loading pumping signal, described pumping signal can increase the electric capacity between described first pole plate and fingerprint.
Optionally, the material of described second pole plate is metal or oxide conductor.
Optionally, the area of described second pole plate is equal with described first polar plate area.
Optionally, described pixel cell also comprises the second pole plate for loading pumping signal, and described pumping signal can increase the electric capacity between described first pole plate and fingerprint.
Optionally, described second pole plate is between described second insulation course and described first insulation course.
Optionally, described second pole plate and described first pole plate are same layer metal.
Optionally, described second pole plate is between described second insulation course and described protective seam.
Optionally, described second pole plate and described light shield layer are same layer metal.
Optionally, described second pole plate comprises the first conductor being positioned at described first surface of insulating layer and the second conductor being positioned at described first conductive surface, is electrically connected between described first conductor and described second conductor.
Optionally, described first conductor and described first pole plate are same layer metal, and described second conductor and described light shield layer are same layer metal.
Optionally, described capacitive fingerprint sensing device also comprises: driver element, for providing the start signal making described amorphous switch device conductive; Sensing element, for reading the described electric signal that described first pole plate obtains after described amorphous switch device conductive.
Optionally, be positioned at the pixel cell that substrate is arranged in array and form pel array; Described driver element be positioned at described pel array capable to one end.
Optionally, described driver element is amorphous silicon driving circuit.
Optionally, described amorphous silicon driving circuit and described pixel cell are formed by same manufacturing process.
Optionally, be positioned at the pixel cell that substrate is arranged in array and form pel array; Described reading unit be positioned at described pel array arrange to one end.
Optionally, described capacitive fingerprint sensing device also comprises: exciting unit, for generation of pumping signal, described pumping signal can make the electric capacity between described first pole plate and fingerprint increase, described pumping signal comprises the first pumping signal and the second pumping signal, and described first pumping signal is different from described second excitation signal voltage value; Described exciting unit produces the first pumping signal in the first moment, produces the second pumping signal in the second moment, and described second moment is later than described first moment; Described sensing element, between the first moment and the second moment, reads background electric signal; Described driver element produces described start signal in the 3rd moment, and described 3rd moment is later than described second moment; Described reading unit reads the sampling electric signal of described first pole plate acquisition in the 4th moment, and described 4th moment is later than described 3rd moment; Capacitive fingerprint sensing device also comprises fingerprint acquiring unit, and described fingerprint acquiring unit obtains fingerprint image based on the difference of sampling electric signal and described background electric signal.
Optionally, described capacitive fingerprint sensing device also comprises: exciting unit, is connected with described second pole plate, for providing described pumping signal to described second pole plate.
Optionally, described exciting unit comprises radio circuit, and described pumping signal is the radiofrequency signal that radio circuit sends.
Optionally, be positioned at the pixel cell that substrate is arranged in array and form pel array; Described capacitive fingerprint sensing device also comprises: driver element, for providing the start signal making described amorphous switch device conductive; Described exciting unit and described driver element lay respectively at described pel array capable to two ends.
Accordingly, the present invention also provides a kind of fingerprint imaging module, comprising:
Capacitive fingerprint sensing device provided by the present invention;
Be covered in the cover sheet on described capacitive fingerprint sensing device.
Optionally, described cover sheet is protection panel or protective coating.
Optionally, described cover sheet is high dielectric constant material.
Optionally, the material of described cover sheet is pottery, sapphire or glass.
Compared with prior art, technical scheme of the present invention has the following advantages:
The present invention, by the first pole plate arranging amorphous switching device and be connected with amorphous switching device, obtains the electric signal with finger print information by described first pole plate, and obtains fingerprint image according to described electric signal.It is integrated that described amorphous switching device and described first pole plate pass through amorphous silicon technology, avoid crystalline silicon technique of the prior art, device fabrication difficulty can be effectively reduced, reduce process complexity, improve device and manufacture yields, reduce device manufacturing cost.
Optionally, in possibility of the present invention, by arranging light shield layer on described amorphous switching device, to block the raceway groove of described amorphous switching device, avoid described raceway groove to be subject to illumination to penetrate, avoid penetrating because raceway groove is subject to illumination and produces influence of leakage current signal, reduce the leakage current of described amorphous switching device, improve the signal quality that described capacitive fingerprint sensing device obtains.
Optionally, in possibility of the present invention, by arranging the second pole plate for launching pumping signal, described pumping signal makes to form planar transmit electric field between skin corium and sense plane, external drive signal source is combined with pixel cell, avoids adding miscellaneous part to realize the transmitting of pumping signal, simplify described fingerprint sensor structure, reduce device manufacture difficulty, reduce device manufacturing cost.
Optionally, in possibility of the present invention, described second pole plate can between described second insulation course and described first insulation course, by realizing with the metal of described first pole plate with layer; Or described second pole plate also can between described second insulation course and described light shield layer, by realizing with the metal of described light shield layer with layer; Or, described second pole plate can also comprise the internal polar plate between described second insulation course and described first insulation course and the external polar plate between described second insulation course and described light shield layer, described internal polar plate is by realizing with the metal of described first pole plate with layer, and described external polar plate is by realizing with the metal of described light shield layer with layer.Therefore technical scheme of the present invention can complete manufacture, also without the need to increasing additional technique and cost without the need to carrying out larger change to existing product line.
Accompanying drawing explanation
Fig. 1 is the sensing schematic diagram of a kind of capacitive fingerprint sensing device in prior art;
Fig. 2 is the structural representation of a kind of capacitive fingerprint sensing device in prior art;
Fig. 3 is the structural representation of another kind of capacitive fingerprint sensing device in prior art;
Fig. 4 to Fig. 7 is the schematic diagram of capacitive fingerprint sensing device first embodiment of the present invention;
Fig. 8 to Figure 11 is the schematic diagram of capacitive fingerprint sensing device second embodiment of the present invention;
Figure 12 to Figure 14 is the schematic diagram of capacitive fingerprint sensing device of the present invention 3rd embodiment;
Figure 15 and Figure 16 is the schematic diagram of capacitive fingerprint sensing device of the present invention 4th embodiment;
Figure 17 is the schematic diagram of fingerprint imaging module one embodiment of the present invention.
Embodiment
From background technology, capacitive fingerprint sensing device of the prior art, mostly based on the integrated circuit on silicon chip, often needs to relate to crystalline silicon technique, therefore there is complex process, the problem that cost is higher.
For solveing the technical problem, the invention provides a kind of capacitive fingerprint sensing device, comprising:
Substrate; Be positioned at the pixel cell that described substrate surface is arranged in array, described pixel cell comprises amorphous switching device, and described amorphous switching device comprises control end, first end and the second end, the conducting or block under described control end controls of described first end and the second end; Described pixel cell also comprises the first pole plate be connected with described amorphous switching device first end, for forming capacitance structure with fingerprint, also for when described amorphous switch device conductive by electric signal transmission to the second end corresponding with the electric capacity of described capacitance structure, to export described electric signal.
The present invention, by the first pole plate arranging amorphous switching device and be connected with amorphous switching device, obtains the electric signal with finger print information by described first pole plate, and obtains fingerprint image according to described electric signal.It is integrated that described amorphous switching device and described first pole plate pass through amorphous silicon technology, avoid crystalline silicon technique of the prior art, device fabrication difficulty can be effectively reduced, reduce process complexity, improve device and manufacture yields, reduce device manufacturing cost.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiments of the invention below in conjunction with accompanying drawing.
With reference to figure 4 to Fig. 7, show the schematic diagram of capacitive fingerprint sensing device first embodiment of the present invention.
With reference to figure 4, show the circuit diagram of capacitive fingerprint sensing device first embodiment of the present invention.
Institute's capacitive fingerprint sensing device comprises: substrate 1000.
Described substrate 1000 is the workbench of Subsequent semiconductor technique.Concrete, the material of described substrate 1000 is insulating material, to improve the isolation between pixel cell.In the present embodiment, described substrate 1000 is glass substrate.The benefit adopting glass substrate to form described capacitive fingerprint sensing device is, can reduce the manufacturing cost of described capacitive fingerprint sensing device.
Be positioned at the pixel cell 1100 that described substrate 1000 surface is arranged in array, described pixel cell 1100 comprises amorphous switching device 1110, described amorphous switching device 1110 comprises control end 1112, first end 1111 and the second end 1113, the conducting or block under described control end 1112 controls of described first end 1111 and the second end 1113.
Described pixel cell 1100 also comprises the first pole plate 1120 be connected with described amorphous switching device 1110 first end 1111, for forming capacitance structure with fingerprint, also for when 1110 conducting of described amorphous switching device by electric signal transmission to the second end 1113 corresponding with the electric capacity of described capacitance structure, to export described electric signal.
It should be noted that, in the present embodiment, be positioned at the sense plane that pixel cell 1100 that described substrate 1000 surface is arranged in array forms described capacitive fingerprint sensing device, planar transmit electric field is formed between described sense plane and the finger skin corium that can conduct electricity, described first pole plate 1120 is relevant with the distance between described sense plane and fingerprint to the electric capacity of the capacitance structure that fingerprint is formed in described planar transmit electric field, and described capacitive fingerprint sensing device obtains corresponding finger print information according to the electric signal relevant to described electric capacity.Concrete, described amorphous switching device 1110 is for controlling the output of the described electric signal that the first pole plate 1120 obtains in described pixel cell 1100.When 1110 conducting of described amorphous switching device, described pixel cell 1100 exports described electric signal.In the present embodiment, described amorphous switching device 1110 is the film transistor device (Thin Film Transistor, TFT) formed based on amorphous silicon technology.Adopt the film transistor device formed based on amorphous silicon technology to avoid crystalline silicon technique of the prior art, effectively can reduce the technology difficulty that device manufactures, reduce process complexity, improve device and manufacture yields, reduce device manufacturing cost.
Described first pole plate 1120 is for forming capacitance structure with fingerprint, and the capacitance size of described capacitance structure is relevant to the distance between described first pole plate 1120 and fingerprint.Therefore the electric signal corresponding to described electric capacity obtained by described first pole plate 1120 can obtain corresponding finger print information.In the present embodiment, described first pole plate 1120 material is conductive material, concrete, can be metal or oxide conductor (such as Indium Tin Oxide, ITO).
Described capacitive fingerprint sensing device also comprises:
Be positioned at drive wire 1200 in the row direction on described substrate 1000, described drive wire 1200 is connected with the control end 1112 of described pixel cell 1100 amorphous switching device 1110, for transmitting the start signal that can make the conducting of described amorphous switching device 1110, described control end 1112 makes described amorphous switching device 1110 realize conducting when receiving described start signal;
Be positioned at the signal wire 1300 along column direction on described substrate 1000, described signal wire 1300 is connected with amorphous switching device 1,110 second end 1113 of described pixel cell 1100, and realizes coupling by described amorphous switching device 1110 and described first pole plate 1120, for transmitting the described electric signal of described first pole plate 1120 acquisition when 1110 conducting of described amorphous switching device.
In conjunction with the vertical view showing pixel cell 1100 in Fig. 4 with reference to figure 5 and Fig. 6, Fig. 5, Fig. 6 is the cut-open view along A-A ' line in Fig. 5.(it should be noted that, in order to make accompanying drawing succinct, Fig. 5 and Fig. 6 does not illustrate substrate 1000)
Concrete, described amorphous switching device 1110 comprises:
Be positioned at described substrate 1000 surface, the grid 1112G be connected with described drive wire 1200, described grid 1112G are the control end of described amorphous switching device 1110.
It should be noted that, in order to Simplified flowsheet structure, avoid adopting complicated via hole technique to realize the electrical connection between described grid 1112G and described drive wire 1200, in the present embodiment, described grid 1112G and described drive wire 1200 are same layer metal, can make simultaneously, therefore, it is possible to reduce step, reduce costs.
Cover the first insulation course 1114 of described substrate 1000, described grid 1112G and described drive wire 1200.
Described first insulation course 1114 is for realizing the source electrode of described grid 1112G and described amorphous switching device 1110 and the electric isolution between draining.Concrete, in the present embodiment, the material of described first insulation course 1114 is silicon nitride.Be formed at the semiconductor layer 1110C that described first insulation course 1114 surface is corresponding with described grid 1112G position.
Form the raceway groove of described amorphous switching device 1110 in described semiconductor layer 1110C, therefore semiconductor layer 1110C is positioned at the top of described grid 1112G.Because described amorphous switching device 1110 is the film transistor device formed based on amorphous silicon technology.Therefore, in the present embodiment, the material of described semiconductor layer 1110C is amorphous silicon.
It should be noted that, in order to simplify structure, reducing technology difficulty, avoid adopting complicated via hole technique to realize electrical connection, in the present embodiment, described first pole plate 1120 is positioned on described first insulation course 1114, is same layer metal with described source electrode 1111S; Described signal wire 1300 is also positioned on described first insulation course 1114, is same layer metal with the described 1113D of drain electrode.So described first pole plate 1120 can make with described source electrode 1111S, and described signal wire 1300 can make with the described 1113D that drains, and reduces step, reduce costs with this simultaneously simultaneously.
Described source electrode 1111S and described drain electrode 1113D and described semiconductor layer 1110C and described grid 1112G transistor formed.In the present embodiment, described transistor is described amorphous switching device 1110, in order to control the output of the electric signal that described first pole plate 1120 obtains.
It should be noted that, described first pole plate 1120 is for obtaining the electric signal with finger print information.In order to improve the precision of obtained fingerprint image, in the present embodiment, described first pole plate 1120 is paved with the area in described pixel cell 1100 except amorphous switching device 1110 as far as possible.But adopt the way of the first pole plate 1120 of larger area to be only an example, the area of the present invention to the first pole plate 1120 does not limit.In other embodiments of the present invention, the size of described first pole plate 1120 can be changed according to the specific design of described capacitive fingerprint sensing device.
Described pixel cell also comprises:
Cover the second insulation course 1115 of amorphous switching device 1110.
Described second insulation course 1115, for the protection of the channel region of described amorphous switching device 1110, protects described semiconductor layer 1110C from the impact of Subsequent semiconductor technique.Concrete, in the present embodiment, described second insulation course 1115 material is silicon nitride.Be positioned at described second insulation course 1115 surface for blocking the light shield layer 1116 of described amorphous switching device 1110.
Concrete, described light shield layer 1116 is subject to illumination for avoiding described semiconductor layer 1110C.Described light shield layer 116 is corresponding with the position of amorphous silicon switch, because described semiconductor layer 1110C is for the formation of the raceway groove of amorphous switching device 1110, after the raceway groove of amorphous switching device 1110 is irradiated by light, can produces larger leakage current, thus affect signal.Therefore the setting of described light shield layer 1116, the raceway groove of described amorphous switching device 1110 can be blocked, avoid described raceway groove to be subject to illumination, the influence of leakage current signal produced due to illumination, the leakage current of described amorphous switching device 1110 can be reduced, improve the signal quality obtained.
In addition, it should be noted that, described light shield layer 1116 also covers described first pole plate 1120 surface, is electrically connected with between described first pole plate 1120.To expand the sensing area of described pixel cell 1100, increase effective distributed capacitance of the capacitance structure that described first pole plate 1120 is formed with fingerprint, reduce the interference of stray capacitance, increase sensing precision.Cover the protective seam 1117 on described light shield layer 1116 surface.
Described protective seam 1117 avoids sustaining damage for the protection of the semiconductor devices that it covers.In the present embodiment, the material of described protective seam 1117 is silicon nitride.
Continue with reference to figure 4, described capacitive fingerprint sensing device also comprises:
Driver element 1400, for providing the start signal making the conducting of described amorphous switching device 1110.
In the present embodiment, described driver element 1400 is amorphous silicon driving circuit (Amorphous SiliconGate Driving, ASG).Therefore, described driver element 1400 can be formed by same amorphous silicon technology processing procedure with described pixel cell 1100, thus can reach Simplified flowsheet step, reduces the object of manufacturing cost.
Sensing element 1500, for reading the described electric signal that described first pole plate 1120 obtains after the conducting of described amorphous switching device 1110.
In the present embodiment, described sensing element 1500 is for reading chip (Read Out IC), the electric signal with finger print information that each pixel cell 1100 obtains reads and converts digital signal to by described reading chip, finally according to the gray scale image of described digital signal forming reactions finger print information, i.e. fingerprint image.
It should be noted that, be positioned at the pixel cell 1100 that substrate 1000 is arranged in array and form pel array, in the present embodiment, described driver element 1400 be positioned at described pel array capable to one end; Described sensing element 1500 be positioned at described pel array arrange to one end.But described driver element 1400 is arranged at pel array capable to one end, described sensing element 1500 is arranged at pel array arrange to the way of one end be only an example, the concrete setting position of the present invention to described driver element 1400 and described sensing element 1500 does not limit.
With reference to figure 7, show the circuit theory schematic diagram of capacitive fingerprint sensing device shown in Fig. 4.
Along with finger and the contact of described capacitive fingerprint sensing device, form planar transmit electric field between described sense plane and skin corium and change.Different pixels unit 1100a, 1100b, 1100c ... first pole plate 1120a, 1120b, 1120c above can form induced charge Q
a, Q
b, Q
cUnder the control of the amorphous switching device in each pixel cell, described induced charge Q
a, Q
b, Q
cbe read out unit 1500 through signal wire 1300 to detect, and be converted to voltage signal, finally change digital signal into.
In fingerprint sensing process, different pixels unit 1110a, 1100b, 1100c ... middle formed induced charge Q
a, Q
b, Q
cnumber and electric capacity C
a, C
b, C
csize be correlated with, and due to electric capacity C
a, C
b, C
csize relevant to the distance between epidermal area 1600 and sense plane.Therefore according to obtained different pixels unit 1110a, 1100b, 1100c ... middle formed induced charge Q
a, Q
b, Q
cthe fingerprint image of sensed finger can be obtained in the distribution of sense plane.
With reference to figure 8 to Figure 11, show the schematic diagram of capacitive fingerprint sensing device second embodiment of the present invention.(it should be noted that, in order to make accompanying drawing succinct, in Fig. 8 to Figure 10, not illustrating substrate)
With reference to figure 8, show the circuit diagram of capacitive fingerprint sensing device second embodiment of the present invention.
The pixel cell 2100 of described capacitive fingerprint sensing device also comprises:
Second pole plate 2130, for loading pumping signal, described pumping signal can increase the electric capacity between described first pole plate 2120 and fingerprint.
Concrete, described second pole plate 2130 is for loading pumping signal, described pumping signal, by changing skin corium current potential, changes the planar transmit electric field between skin corium and sense plane, thus increases described first pole plate 2120 and the electric capacity of fingerprint in described planar transmit electric field.In the present embodiment, the material of described second pole plate 2130 is conductive material, can be metal or oxide conductor.
It should be noted that, in order to improve the quality of the described electric signal that described first pole plate 2120 obtains, in the present embodiment, the area equation of described second pole plate 2130 and described first pole plate 2120, and described second pole plate 2130 is together with described first pole plate 2120, be paved with the area except amorphous switching device 2110 in described pixel cell 2100 as far as possible.
In conjunction with the vertical view showing pixel cell 2100 in Fig. 8 with reference to figure 9 and Figure 10, Fig. 9, Figure 10 is the cut-open view of B-B ' line in Fig. 9.
Concrete, in the present embodiment, described second pole plate 2130 is between described second insulation course 2115 and described first insulation course 2114.In addition, be Simplified flowsheet, reduce costs, described second pole plate 2130 is same layer metal with described first pole plate 2120.
Described second pole plate 2130 is same layer metal with described first pole plate 2120, can make simultaneously.Therefore described capacitive fingerprint sensing device can produce making, also without the need to increasing additional technology cost without the need to strengthening the existing product line of change.
Continue with reference to figure 8, described pixel cell 2100 is arranged in array formation pel array.In the present embodiment, the second pole plate 2130 in each pixel cell 2100 runs through whole pixel cell 2100, and the second pole plate 2130 being positioned at the pixel cell 2100 of same row is connected, to realize the transmission of pumping signal.
In addition, described capacitive fingerprint sensing device also comprises exciting unit 260, for generation of pumping signal, is connected with described second pole plate 2130, for improving described pumping signal to described second pole plate, described pumping signal makes the electric capacity between described first pole plate and fingerprint increase.
It should be noted that, in the present embodiment, described exciting unit 260 comprises radio circuit, and therefore described pumping signal is radiofrequency signal RF.Described radiofrequency signal RF reaches the skin corium with conductive capability through epidermal area, by changing skin corium current potential, change the planar transmit electric field between skin corium and sense plane, thus increase described first pole plate 2120 and the electric capacity of fingerprint in described planar transmit electric field.
In the present embodiment, described pumping signal comprises the first pumping signal V1 and the second pumping signal V2, and described first pumping signal V1 is different from described second pumping signal V2 magnitude of voltage; Described exciting unit 260 produces the first pumping signal V1 at the first moment T1, produces the second pumping signal V2 at the second moment T2, and described second moment T2 is later than described first moment T1; Described sensing element 2500, between the first moment T1 and the second moment T2, reads background electric signal S1; Described driver element 2400 produces described start signal K at the 3rd moment T3, and described 3rd moment T3 is later than described second moment T2; Described reading unit 2500 reads the sampling electric signal S2 of described first pole plate 2120 acquisition at the 4th moment T4, and described 4th moment T4 is later than described 3rd moment T3; Capacitive fingerprint sensing device also comprises fingerprint acquiring unit, and described fingerprint acquiring unit obtains fingerprint image based on the difference of described sampling electric signal S2 and described background electric signal S1.
Concrete, with reference to Figure 11, show the circuit theory schematic diagram of capacitive fingerprint sensing device shown in Fig. 8.
Described pixel cell 2100a, 2100b ... in first pole plate 2120a, 2120b ... and second pole plate 2130a, 2130b ... between form the internal capacitance C of described capacitive fingerprint sensing device
a0, C
b0......
Along with finger and the contact of described capacitive fingerprint sensing device, as earth conductor, between the first pole plate 2120 in finger and pixel cell and the second pole plate 2130, form external capacitive.Concrete, epidermal area 2700 and pixel cell 2100a, 2100b ... in first pole plate 2120a, 2120b ... and second pole plate 2130a, 2130b ... between form external capacitive: C
a1and C
a2, C
b1and C
b2......
It should be noted that, in general, the spacing of epidermal area fingerprint texture is for being about 200 μm, and the size of pixel cell is about about 50 μm, be less than the spacing of epidermal area fingerprint texture, therefore, can think equal for the first pole plate in same pixel cell and the distance between the second pole plate with epidermal area 2700.So the first pole plate and the external capacitive that formed between the second pole plate with epidermal area 2700 are equal in same pixel cell: C
a1=C
a2=C
a, C
b1=C
b2=C
b......
After finger contacts with described capacitive fingerprint sensing device, first make amorphous switching device 2110 block, described signal wire 2300 is reset, and the current potential of described signal wire 2300 is set to the first current potential V1.Exciting unit 260 produces the first pumping signal V1 in the T1 moment simultaneously.Under the effect of described first pumping signal V1, described second pole plate 2130a, 2130b ... also the first current potential V1 is arranged at.
Then, under the state that maintenance amorphous switching device 2110 blocks, carry out first time signal sampling, described sensing element 2500 obtains background electric signal S1.Because described background electric signal S1 is in gatherer process, described amorphous switching device 2110 maintains and blocks state, and therefore, the information that described background electric signal S1 comprises is the floor information in signal wire 2300 and sensing element 2500.
Afterwards, described exciting unit 260 produces the second pumping signal V2 at the second moment T2.Described second pole plate 2130a, 2130b ... the second current potential V2 is arranged under the effect of described exciting unit 260.
Along with second pole plate 2130a, 2130b ... be arranged at the second current potential V2, first by internal capacitance C
a0, C
b0coupling, first pole plate 2120a, 2120b can be caused ... upper induced charge amount changes Δ Q
a1, Δ Q
b1secondly due to second pole plate 2130a, 2130b ... be arranged at the second current potential V2, by second pole plate 2130a, 2130b ... and the external capacitive C formed between finger
a2, C
b2coupling, can cause finger skin corium current potential change, then by finger with first pole plate 2120a, 2120b ... between formed external capacitive C
a1, C
b1coupling, first pole plate 2120a, 2120b can be caused further ... upper induced charge amount changes Δ Q
a2, Δ Q
b2......
Then, described driver element 2400 produces start signal K, to open amorphous switching device 2110 at the 3rd moment T3.Then, carry out second time signal sampling, described reading circuit 2500 reads the sampling electric signal S2 of described first pole plate 2120 acquisition in the T4 moment.
Due to when second time signal sampling, amorphous switching device 2110 realizes conducting.Therefore described sampling electric signal S2 is except including the floor information in background electric signal S1, also include first pole plate 2120a, 2120b ... the change of upper induced charge, the summation of the variable quantity of the induced charge namely caused by internal capacitance and external capacitive: Δ Q
a1+ Δ Q
a2, Δ Q
b1+ Δ Q
b2......
The change of the electric capacity two ends induced charge caused due to potential change is relevant to the size of electric capacity.Therefore, the variation delta Q of the induced charge caused by internal capacitance
a1, Δ Q
a2... with described internal capacitance C
a0, C
b0size be correlated with, for pixel cells all in pel array, due to internal capacitance C
a0, C
b0all equal, the therefore variation delta Q of induced charge
a1, Δ Q
a2... all equal, i.e. Δ Q
a1=Δ Q
a2=And the variation delta Q of the induced charge caused by external capacitive
a1, Δ Q
a2... with external capacitive C
a, C
bsize be correlated with, concerning the pixel cell of diverse location in pel array, external capacitive C
a, C
bsize relevant to the distance between epidermal area and sense plane.
Finally, capacitance signal S is obtained according to described background electric signal S1 and described sampling electric signal S2
c, and according to described capacitance signal S
cobtain fingerprint image.Concrete, described fingerprint acquiring unit, described fingerprint acquiring unit obtains fingerprint image based on the difference of described sampling electric signal S2 and described background electric signal S1.
Concrete, namely the difference of described background electric signal S1 and described sampling electric signal S2 can remove local information from described sampling electric signal S2, therefore obtained described capacitance signal S
cthere is better signal to noise ratio (S/N ratio), according to described capacitance signal S
cthe fingerprint image of better quality can be obtained.
Owing to including the variation delta Q of the induced charge relevant to the spacing of epidermal area and sense plane in described electric signal S2
a1, Δ Q
a2... therefore, described capacitance signal S
cin also include the information relevant to the spacing of epidermal area and sense plane, according to described capacitance signal S
cthe fingerprint image of institute's sensing finger can be obtained in the distribution of sense plane.
In the present embodiment, the second pole plate 2130 in different lines is connected with same peripheral wire, and is connected with the exciting unit 260 be positioned on peripheral circuit.Described exciting unit 260 provides identical pumping signal by same peripheral wire to the second pole plate 2130 in different lines, thus ensure that the electric signal that described sensing element 2500 obtains is only relevant to fingerprint.
But it should be noted that, described second pole plate 2130 one end is connected, then the way be connected with same peripheral wire is only an example.In other embodiments of the present invention, described second pole plate 2130 can also be made to divide into groups to be connected, described second pole plate 2130 of different group is connected with described exciting unit 260 by different peripheral wires.The connected mode of the present invention to described second pole plate 2130 does not limit.
Referring to figs 12 to Figure 14, the schematic diagram of capacitive fingerprint sensing device of the present invention 3rd embodiment is shown.(it should be noted that, in order to make accompanying drawing succinct, in Figure 12 to Figure 14, not illustrating substrate)
With reference to Figure 12, show the circuit diagram of capacitive fingerprint sensing device of the present invention 3rd embodiment.
Described in the present embodiment and Fig. 4 to Figure 11, embodiment something in common repeats no more.A difference of the present embodiment and previous embodiment be described exciting unit 3600 be positioned at the pel array be made up of pixel cell 3100 capable to one end, be connected with described second pole plate 3130, provide described pumping signal to described second pole plate 3130.
It should be noted that, described driver element 3400 be also positioned at described pel array capable to, therefore, in the present embodiment, described exciting unit 3600 and described driver element 3400 lay respectively at described pel array capable to two ends, to avoid described capacitive fingerprint sensing device one side frame excessive too complicated.
In addition, pel array capable to one end described exciting unit 3600 is set described exciting unit 3600 and pixel cell 3100 can also be made to be formed by same amorphous silicon technology processing procedure, thus reach Simplified flowsheet step, the object of reduction manufacturing cost.
With reference to Figure 13 and Figure 14, show the structural representation of pixel cell 3100 in Figure 12.Wherein Figure 13 is the vertical view of described pixel cell 3100, and Figure 14 is the cut-open view along C-C ' line in Figure 13.
Another difference of the present embodiment and previous embodiment is that described second pole plate 3130 is between described second insulation course 3115 and described protective seam 3117.
In addition, in the present embodiment, described light shield layer 3116 is covered on the second insulation course 3115 and the first pole plate 3120, and described protective seam 3117 covers described light shield layer 3116 surface.Therefore, described second pole plate 3130 can be same layer metal with described light shield layer 3116, can make simultaneously.
In addition, the second pole plate of described capacitive fingerprint sensing device can also adopt other materials to combine realization.
With reference to Figure 15 and Figure 16, show the structural representation of capacitive fingerprint sensing device of the present invention 4th embodiment.(it should be noted that, in order to make accompanying drawing succinct, in Figure 15 and Figure 16, not illustrating substrate)
Wherein, Figure 15 is the vertical view of pixel cell 4100 in described capacitive fingerprint sensing device the 4th embodiment, and Figure 16 is the cut-open view along D-D ' line in Figure 15.
The present embodiment and previous embodiment something in common repeat no more herein, the difference of the present embodiment is: described second pole plate 4130 comprises the first conductor 4130i being positioned at described first insulation course 4114 surface and the second conductor 4130u being positioned at described first conductor 4130i surface, is electrically connected between described first conductor 4130i and described second conductor 4130u.Described protective seam 4117 also covers described second conductor 4130u, is subject to the impact of subsequent technique to prevent described second conductor 4130u.The multiple set-up mode of described second pole plate 4130, reduces the manufacture difficulty of described capacitive fingerprint sensing device, reduces manufacturing cost.
In the present embodiment, described first pole plate 4120 is positioned on described first insulation course 4114; Described light shield layer 4116 is covered on described second insulation course 4115 and described first pole plate 4120.
Therefore, in the present embodiment, described first conductor 4130i and the same layer of described first pole plate 4120, be positioned on the first insulation course 4114; Described second conductor 4130u and the same layer of described light shield layer 4116, be covered in described first conductor 4130i surface, and be electrically connected with described first conductor 4130i.Therefore, described first conductor 4130i and described first pole plate 4120 can be same layer metal, can be formed simultaneously; Described second conductor 4130u and described light shield layer 4116 can be same layer metal, can be formed simultaneously, can simplify manufacture process thus, reduce manufacturing cost.
Accordingly, the present invention also provides a kind of fingerprint imaging module, comprising:
Capacitive fingerprint sensing device provided by the present invention; Be covered in the cover sheet on described capacitive fingerprint sensing device.
With reference to Figure 17, show the schematic diagram of fingerprint imaging module one embodiment of the present invention.
Described fingerprint imaging module comprises:
Capacitive fingerprint sensing device 5000 provided by the present invention, in order to obtain fingerprint image.Concrete scheme, with reference to the embodiment of aforementioned capacitive fingerprint sensing device, does not repeat them here.
Described fingerprint imaging module also comprises the cover sheet 110 be covered on described capacitive fingerprint sensing device 5000.
Described cover sheet 110, for the protection of described capacitive fingerprint sensing device 5000, prevents described capacitive fingerprint sensing device 5000 to be worn.
In order to improve the signal intensity that described capacitive fingerprint sensing device 5000 obtains, improve signal quality, in the present embodiment, described cover sheet 110 material is high dielectric constant material.Concrete, in the present embodiment, described cover sheet 110 is the protection panel of hard or covers the protective coating of described capacitive fingerprint sensing device 5000, and wherein protective surface plate material comprises pottery, sapphire or glass.
To sum up, the present invention, by the first pole plate arranging amorphous switching device and be connected with amorphous switching device, obtains the electric signal with finger print information by described first pole plate, and obtains fingerprint image according to described electric signal.It is integrated that described amorphous switching device and described first pole plate pass through amorphous silicon technology, avoid crystalline silicon technique of the prior art, device fabrication difficulty can be effectively reduced, reduce process complexity, improve device and manufacture yields, reduce device manufacturing cost.In addition, in possibility of the present invention, by arranging light shield layer on described amorphous switching device, to block the raceway groove of described amorphous switching device, avoid described raceway groove to be subject to illumination to penetrate, avoid penetrating because raceway groove is subject to illumination and produces influence of leakage current signal, reduce the leakage current of described amorphous switching device, improve the signal quality that described capacitive fingerprint sensing device obtains.Further, in possibility of the present invention, by arranging the second pole plate for launching pumping signal, described pumping signal makes to form planar transmit electric field between skin corium and sense plane, external drive signal source is combined with pixel cell, avoids adding miscellaneous part to realize the transmitting of pumping signal, simplify described fingerprint sensor structure, reduce device manufacture difficulty, reduce device manufacturing cost.And in possibility of the present invention, described second pole plate can between described second insulation course and described first insulation course, by realizing with the metal of described first pole plate with layer; Or described second pole plate also can between described second insulation course and described light shield layer, by realizing with the metal of described light shield layer with layer; Or, described second pole plate can also comprise the internal polar plate between described second insulation course and described first insulation course and the external polar plate between described second insulation course and described light shield layer, described internal polar plate is by realizing with the metal of described first pole plate with layer, and described external polar plate is by realizing with the metal of described light shield layer with layer.Therefore technical scheme of the present invention can complete manufacture, also without the need to increasing additional technique and cost without the need to carrying out larger change to existing product line.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (34)
1. a capacitive fingerprint sensing device, is characterized in that, comprising:
Substrate;
Be positioned at the pixel cell that described substrate surface is arranged in array, described pixel cell comprises amorphous switching device, and described amorphous switching device comprises control end, first end and the second end, the conducting or block under described control end controls of described first end and the second end;
Described pixel cell also comprises the first pole plate be connected with described amorphous switching device first end, for forming capacitance structure with fingerprint, also for when described amorphous switch device conductive by electric signal transmission to the second end corresponding with the electric capacity of described capacitance structure, to export described electric signal.
2. capacitive fingerprint sensing device as claimed in claim 1, it is characterized in that, described substrate is glass substrate.
3. capacitive fingerprint sensing device as claimed in claim 1, it is characterized in that, described first plate material is metal or oxide conductor.
4. capacitive fingerprint sensing device as claimed in claim 1, it is characterized in that, described capacitive fingerprint sensing device also comprises:
Be positioned at drive wire in the row direction on described substrate, described drive wire is connected with the control end of described pixel cell amorphous switching device, for transmitting the start signal that can make described amorphous switch device conductive, described control end makes described amorphous switching device realize conducting when receiving described start signal;
Be positioned at the signal wire along column direction on described substrate, described signal wire is connected with amorphous switching device second end of described pixel cell, for transmitting the described electric signal that described first pole plate obtains when described amorphous switch device conductive.
5. capacitive fingerprint sensing device as claimed in claim 4, it is characterized in that, described amorphous switching device comprises:
Be positioned at described substrate surface, the grid be connected with described drive wire, described grid is the control end of described amorphous switching device;
Cover the first insulation course of described substrate, described grid and described drive wire;
Be formed at the semiconductor layer that described first surface of insulating layer is corresponding with described gate location;
Be formed at described semiconductor layer surface, and be positioned at source electrode and the drain electrode of described grid both sides, described source electrode is the first end with described amorphous switching device, and described drain electrode is the second end with described amorphous switching device.
6. capacitive fingerprint sensing device as claimed in claim 5, it is characterized in that, the semiconductor layer material of described amorphous switching device is amorphous silicon.
7. capacitive fingerprint sensing device as claimed in claim 5, it is characterized in that, described grid and described drive wire are same layer metal.
8. capacitive fingerprint sensing device as claimed in claim 5, it is characterized in that, described drain electrode and described signal wire are same layer metal.
9. capacitive fingerprint sensing device as claimed in claim 5, it is characterized in that, described source electrode and described first pole plate are same layer metal.
10. capacitive fingerprint sensing device as claimed in claim 5, it is characterized in that, described first pole plate is positioned on described first insulation course;
Described pixel cell also comprises:
Cover the second insulation course of amorphous switching device;
Be positioned at described second surface of insulating layer for blocking the light shield layer of described amorphous switching device;
Cover the protective seam on described light shield layer surface.
11. capacitive fingerprint sensing devices as claimed in claim 10, it is characterized in that, described light shield layer also covers described first polar board surface, is electrically connected with between described first pole plate.
12. capacitive fingerprint sensing devices as claimed in claim 1, it is characterized in that, described pixel cell also comprises: the second pole plate, and for loading pumping signal, described pumping signal can increase the electric capacity between described first pole plate and fingerprint.
13. capacitive fingerprint sensing devices as claimed in claim 12, is characterized in that, the material of described second pole plate is metal or oxide conductor.
14. capacitive fingerprint sensing devices as claimed in claim 12, is characterized in that, the area of described second pole plate is equal with described first polar plate area.
15. capacitive fingerprint sensing devices as claimed in claim 10, is characterized in that, described pixel cell also comprises the second pole plate for loading pumping signal, and described pumping signal can increase the electric capacity between described first pole plate and fingerprint.
16. capacitive fingerprint sensing devices as claimed in claim 15, it is characterized in that, described second pole plate is between described second insulation course and described first insulation course.
17. capacitive fingerprint sensing devices as claimed in claim 16, is characterized in that, described second pole plate and described first pole plate are same layer metal.
18. capacitive fingerprint sensing devices as claimed in claim 15, it is characterized in that, described second pole plate is between described second insulation course and described protective seam.
19. capacitive fingerprint sensing devices as claimed in claim 18, is characterized in that, described second pole plate and described light shield layer are same layer metal.
20. capacitive fingerprint sensing devices as claimed in claim 15, it is characterized in that, described second pole plate comprises the first conductor being positioned at described first surface of insulating layer and the second conductor being positioned at described first conductive surface, is electrically connected between described first conductor and described second conductor.
21. capacitive fingerprint sensing devices as claimed in claim 20, it is characterized in that, described first conductor and described first pole plate are same layer metal, described second conductor and described light shield layer are same layer metal.
22. capacitive fingerprint sensing devices as claimed in claim 1, it is characterized in that, described capacitive fingerprint sensing device also comprises:
Driver element, for providing the start signal making described amorphous switch device conductive;
Sensing element, for reading the described electric signal that described first pole plate obtains after described amorphous switch device conductive.
23. capacitive fingerprint sensing devices as claimed in claim 22, is characterized in that, are positioned at the pixel cell that substrate is arranged in array and form pel array; Described driver element be positioned at described pel array capable to one end.
24. capacitive fingerprint sensing devices as claimed in claim 22, it is characterized in that, described driver element is amorphous silicon driving circuit.
25. capacitive fingerprint sensing devices as claimed in claim 24, it is characterized in that, described amorphous silicon driving circuit and described pixel cell are formed by same manufacturing process.
26. capacitive fingerprint sensing devices as claimed in claim 22, is characterized in that, are positioned at the pixel cell that substrate is arranged in array and form pel array; Described reading unit be positioned at described pel array arrange to one end.
27. capacitive fingerprint sensing devices as claimed in claim 22, it is characterized in that, described capacitive fingerprint sensing device also comprises:
Exciting unit, for generation of pumping signal, described pumping signal can make the electric capacity between described first pole plate and fingerprint increase, and described pumping signal comprises the first pumping signal and the second pumping signal, and described first pumping signal is different from described second excitation signal voltage value;
Described exciting unit produces the first pumping signal in the first moment, produces the second pumping signal in the second moment, and described second moment is later than described first moment;
Described sensing element, between the first moment and the second moment, reads background electric signal;
Described driver element produces described start signal in the 3rd moment, and described 3rd moment is later than described second moment;
Described reading unit reads the sampling electric signal of described first pole plate acquisition in the 4th moment, and described 4th moment is later than described 3rd moment;
Capacitive fingerprint sensing device also comprises fingerprint acquiring unit, and described fingerprint acquiring unit obtains fingerprint image based on the difference of sampling electric signal and described background electric signal.
28. capacitive fingerprint sensing devices as described in claim 12 or 15, it is characterized in that, described capacitive fingerprint sensing device also comprises: exciting unit, is connected with described second pole plate, for providing described pumping signal to described second pole plate.
29. capacitive fingerprint sensing devices as described in claim 27 or 28, it is characterized in that, described exciting unit comprises radio circuit, and described pumping signal is the radiofrequency signal that radio circuit sends.
30. capacitive fingerprint sensing devices as claimed in claim 28, is characterized in that, are positioned at the pixel cell that substrate is arranged in array and form pel array;
Described capacitive fingerprint sensing device also comprises: driver element, for providing the start signal making described amorphous switch device conductive;
Described exciting unit and described driver element lay respectively at described pel array capable to two ends.
31. 1 kinds of fingerprint imaging modules, is characterized in that, comprising:
By the capacitive fingerprint sensing device as described in any one of claims 1 to 30 claim;
Be covered in the cover sheet on described capacitive fingerprint sensing device.
32. fingerprint imaging modules as claimed in claim 31, is characterized in that, described cover sheet is protection panel or protective coating.
33. fingerprint imaging modules as claimed in claim 32, it is characterized in that, described cover sheet is high dielectric constant material.
34. fingerprint imaging modules as claimed in claim 33, is characterized in that, the material of described cover sheet is pottery, sapphire or glass.
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