CN104865695A - THz wave communication frequency switching device based on prism structure and switching method - Google Patents
THz wave communication frequency switching device based on prism structure and switching method Download PDFInfo
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Abstract
本发明提供了一种基于棱镜结构的太赫兹波通信频率切换装置及切换方法，包括太赫兹波发射部、棱镜部、光栅部以及位移台部，太赫兹发射部和棱镜部的入射面相对，发射的太赫兹波平行入射于棱镜部的入射面，太赫兹波以横磁模经棱镜部的底面反射，以消逝波的形式耦合进位于棱镜部反射面下方的光栅部中，在光栅表面形成表面等离子体波。通过检测棱镜出射面的反射光，可以发现在某一频率处的反射率急剧下降，形成吸收峰。光栅部与棱镜部之间的间隙构成表面等离子体波的传输通道，通过人为改变间隙厚度达到控制通信频率切换的目的。
The present invention provides a terahertz wave communication frequency switching device and switching method based on a prism structure, comprising a terahertz wave emitting part, a prism part, a grating part and a displacement stage part, the incident surfaces of the terahertz wave emitting part and the prism part are opposite, The emitted terahertz wave is incident on the incident surface of the prism part in parallel, and the terahertz wave is reflected by the bottom surface of the prism part in the transverse magnetic mode, and is coupled into the grating part under the reflective surface of the prism part in the form of evanescent wave, forming a surface plasmon waves. By detecting the reflected light on the exit surface of the prism, it can be found that the reflectivity drops sharply at a certain frequency, forming an absorption peak. The gap between the grating part and the prism part constitutes the transmission channel of the surface plasmon wave, and the purpose of controlling the switching of the communication frequency is achieved by artificially changing the thickness of the gap.
Description
Technical field
The invention belongs to the THz wave communications field, be specifically related to a kind of THz wave communication frequency switching device shifter based on prism structure and changing method.
Background technology
Terahertz (THz) ripple is the electromagnetic wave between microwave and far infrared.In recent years, along with the development of ultrafast laser technique, that the generation of terahertz pulse is had is stable, excitation source reliably, from then on makes people to study Terahertz.Terahertz has a wide range of applications in biomedicine, safety monitoring, nondestructive detecting, uranology, spectrum and the field such as imaging technique and information science.And the development and utilization of terahertz wave band be unable to do without Terahertz function element, it is a kind of basic function element that Terahertz is applied that Terahertz band wave arrestment is led, and is also one of important devices of Terahertz detection field.Good filter effect represents high s/n ratio and high sensitivity.
Surface plasma provides great possibility (J.Appl.Phys.107 (11), 111101,2010) in the application that the extensive research of terahertz wave band is high-performance terahertz filter part.But the surface plasma excimer excited in metal surface is very faint, cannot satisfy the demands (Progress in quantum electronics, 32 (1), 1-41,2008).2014, the people such as Chen Lin (Opt.Lett.39 (15), 4541-4544,2014) propose the Terahertz bandreject filtering device of single groove parallel plate structure, utilize the high-order chamber mould of single groove to achieve high-performance Terahertz hyperchannel bandreject filtering device.But its deficiency is, it can not realize the switching of frequency filtering.
Summary of the invention
The present invention, for solving the problem and carrying out, by providing a kind of THz wave communication frequency switching device shifter based on prism structure, realizes the saltus step of frequency filtering.
Present invention employs following technical scheme:
THz wave communication frequency switching device shifter based on prism structure provided by the invention, has such technical characteristic, comprising: THz wave emission part, for launching THz wave; Prism portion, is arranged in the light path of THz wave, and the plane of incidence is relative with THz wave emission part, for receiving THz wave, and conducts THz wave; Grating department, is arranged at the below of prism portion reflecting surface, and prism portion is spaced in intervals, and for the THz wave that is coupled, comprises a plurality of the first groove alternately and the second groove; Displacement platform portion, is connected with prism portion and grating department respectively, for regulating the spacing between prism portion and grating department; And THz wave acceptance division, relative with the exit facet in prism portion, for receiving the THz wave through this inclined-plane.Wherein, the first groove is different with the groove depth of the second groove; THz wave is coupled in grating department with the form of evanescent waves; Displacement platform portion regulates the spacing between prism portion and grating department, and the evanescent waves for different frequency is coupled in grating department, realizes the switching of THz wave communication frequency.
THz wave communication frequency switching device shifter based on prism structure provided by the invention, can also have such technical characteristic: prism portion is Dove prism.
THz wave communication frequency switching device shifter based on prism structure provided by the invention, can also have such technical characteristic: the depth ratio of the first groove and the second groove is 1.5:1 ~ 5:1.
THz wave communication frequency switching device shifter based on prism structure provided by the invention, can also have such technical characteristic: the spacing between prism portion and grating department 70 μm ~ 700 μm.
THz wave communication frequency switching device shifter based on prism structure provided by the invention, such technical characteristic can also be had: the surface of the first groove and the second groove is metal film, metal film is any one in aluminium, copper, silver, iron, nickel, titanium, gold, zinc and alloy thereof, and the thickness of metal film is greater than 400nm.
THz wave communication frequency switching device shifter based on prism structure provided by the invention, can also have such technical characteristic: fill in the first groove and the second groove: any one in non-conductive gas, liquid, colloid and powder.
THz wave communication frequency switching device shifter based on prism structure provided by the invention, such technical characteristic can also be had: displacement platform portion comprises the first displacement platform portion and second moving stage portion, first displacement platform portion is connected with prism portion, for regulating the position in prism portion, second moving stage portion is connected with grating department, for regulating the spacing between grating department and prism portion.First displacement platform portion is identical with the structure in second moving stage portion, includes horizontal position moving stage and vertical displacement platform.
Further, present invention also offers a kind of method that THz wave communication frequency switching device shifter based on prism structure carries out communication frequency switching, it is characterized in that, comprise the following steps:
Step one, adopt THz wave emission part to launch THz wave to the surface of emission in prism portion, it is inner that THz wave is refracted into prism portion by the surface of emission; Step 2, the reflecting surface in prism portion is adopted to reflect THz wave, THz wave is coupled in grating department with the form of evanescent waves, surface plasma wave is formed on grating department surface, and transmit in groove array, adopt THz wave acceptance division the THz wave be not coupled in grating department to be received; Step 3, adopts the spacing between displacement platform portion adjustment lens section and grating department, realizes the switching of THz wave communication frequency.
Invention effect and effect
According to the THz wave communication frequency switching device shifter based on prism structure provided by the invention, due to the certain spacing of grating department and interval, prism portion, this spacing is as the transmission channel of evanescent waves, the THz wave that can realize different frequency by the size of spacing is coupled to the surface of grating department with the form of evanescent waves, and form surface plasma wave on this surface, make THz wave communication frequency switching device shifter provided by the invention can realize the saltus step of frequency filtering.Simultaneously, because grating department is provided with the first groove and second groove of different groove depth, surface plasma wave is when groove array transmits, by the coupling of two kinds of grooves, the surface plasma wave of two kinds of different frequency ranges can be formed, the surface plasma wave of corresponding frequencies can be selected according to practical situations.
Accompanying drawing explanation
Fig. 1 is the structural representation of the THz wave communication frequency switching device shifter based on prism structure of the present invention;
Fig. 2 is the schematic diagram of the THz wave communication frequency switching device shifter based on prism structure of the present invention;
Fig. 3 is the structural representation of grating department of the present invention;
Fig. 4 is the process flow diagram that the THz wave communication frequency switching device shifter based on prism structure of the present invention carries out the switching of THz wave communication frequency;
Fig. 5 is a transport property design sketch based on the THz wave communication frequency switching device shifter of prism structure of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of the THz wave communication frequency switching device shifter based on prism structure of the present embodiment.
Fig. 2 is the schematic diagram of the THz wave communication frequency switching device shifter based on prism structure of the present embodiment.
As depicted in figs. 1 and 2, the THz wave communication frequency switching device shifter 100 based on prism structure comprises prism portion 1, grating department 2, THz wave emission part 3, THz wave acceptance division 4 and displacement platform portion 5.Grating department 2 is positioned at the below in prism portion 1, and terahertz sources portion 3 and Terahertz acceptance division 4 lay respectively at the left and right sides in prism portion 1; Displacement platform portion 5 is connected with grating department 2 with prism portion 1 respectively, for regulating spacing therebetween.
Prism portion 1 is Dove prism, comprise the plane of incidence, exit facet and reflecting surface, the reflecting surface in grating department 2 and prism portion 1 is spaced in intervals, terahertz sources portion 3 and Terahertz acceptance division 4 are relative with the plane of incidence in prism portion 1 and exit facet respectively, for launching terahertz wave signal to prism portion 1 and receiving the THz wave of passing from prism portion.In the present embodiment, the spacing between prism portion 1 and grating department 2 is of a size of 70 ~ 700 μm.
Fig. 3 is the structural representation of the present embodiment grating department.
As shown in Figures 2 and 3, grating department 2 is for having the photoresistance plate of groove structure, photoresistance plate is provided with alternately and different the first groove 21 and the second groove 22 of the degree of depth, the surface of two grooves is all coated with the metal film that a layer thickness is greater than 400nm, for realizing the transmission of THz wave in groove array.In the present embodiment, metal film is by any one film made in aluminium, copper, silver, iron, nickel, titanium, gold, zinc and alloy thereof.
First groove 21 and the second adjacent with it groove 22 constitute a conduction unit of grating department jointly.Spacing between the width of conduction unit, the groove width of two grooves, groove depth and two grooves is all in micron order.In the present embodiment, the width P of conduction unit is 50 μm ~ 300 μm, and the groove width of two grooves is 20 ~ 280 μm, and the groove depth ratio of the first groove and the second groove is 1.5:1 ~ 5:1, and the scope of groove depth size is 20 ~ 280 μm.
Meanwhile, can be filled with in non-conductive gas, liquid, colloid and powder in the first groove and the second groove any one.
The principle that the THz wave communication frequency switching device shifter based on prism structure in the present embodiment carries out the switching of THz wave communication frequency is: THz wave is with the reflective surface of transverse magnetic wave through prism portion 1, be coupled into the grating department 2 be arranged in below prism portion with the form of evanescent waves, form surface plasma wave at grating surface.By detecting the reflected light in prismatic reflection face, can find sharply to decline at the reflectivity at a certain frequency place, forming absorption peak.Gap between grating department and prism portion forms the transmission channel of surface plasma wave, by people for a change gap thickness reach control communication frequency switch object.
Prism portion in the present embodiment and the preparation method of grating department are: make a Dove prism with teflon.Make a series of groove with on traditional ultra-violet lithography photoresist on a glass substrate, then on groove, plate the gold of one deck 600nm, thus make pseudo-surface plasma body grating.
Fig. 4 is the process flow diagram that the THz wave communication frequency switching device shifter based on prism structure in the present embodiment carries out the switching of THz wave communication frequency.
As shown in Figure 4, the method for carrying out the switching of THz wave communication frequency based on the THz wave communication frequency switching device shifter of prism structure comprises the following steps:
Step one, is placed in time-domain spectroscopy system by prism portion and grating department, and is installed in displacement platform portion respectively;
Step 2, regulates the horizontal position moving stage that is connected with prism portion and vertical displacement platform, makes THz wave can from the parallel plane of incidence being injected into prism portion of THz wave emission part, and the THz wave that major part is injected by the plane of incidence is refracted into prism inside;
Step 3, THz wave, at the reflective surface in prism portion, is coupled in grating department with the form of evanescent waves, form surface plasma wave on grating department surface, be not coupled into the THz wave in grating department, by the exit facet of prism, received by THz wave acceptance division, realize filtering;
Step 4, surface plasma wave transmits in the groove array of grating department, under the coupling of the first groove and the second groove, form two unifrequent THz wave;
Step 5, regulate the horizontal position moving stage and vertical displacement platform that are connected with grating, change the spacing between prism portion and grating department, along with the change of spacing, in prism portion, the THz wave of different frequency is filtered, and realizes the switching of THz wave communication frequency.
Fig. 5 is a transport property design sketch based on the THz wave communication frequency switching device shifter of prism structure.
Switching device shifter used in Fig. 5 is of a size of: the conduction unit width P of groove is 60 μm, and the width of groove is 20 μm, the groove depth h of the first groove
1be 100 μm, the groove depth h of the second groove
2it is 80 μm.Spacing between prism portion and concave part is respectively 100 μm and 400 μm.
As shown in Figure 5, when the spacing g between prism and grating is 400um, in the place of about 0.49THz, this device is very little at characteristic frequency reflectivity, shields the signal of 0.49THz frequency.And when g is 100um, in the place of about 1.91THz, this device is very little at characteristic frequency reflectivity, shield the signal of 1.91THz frequency.Thus, the switching of frequency filtering is achieved.
Embodiment effect and effect
According to the THz wave communication frequency switching device shifter based on prism structure that the present embodiment provides, due to the certain spacing of grating department and interval, prism portion, this spacing is as the transmission channel of evanescent waves, the THz wave that can realize different frequency by the size of spacing is coupled to the surface of grating department with the form of evanescent waves, and form surface plasma wave on this surface, make THz wave communication frequency switching device shifter provided by the invention can realize the saltus step of frequency filtering.Simultaneously, because grating department is provided with the first groove and second groove of different groove depth, surface plasma wave is when groove array transmits, by the coupling of two kinds of grooves, the surface plasma wave of two kinds of different frequency ranges can be formed, the surface plasma wave of corresponding frequencies can be selected according to practical situations.
The invention is not restricted to the scope of embodiment; to those skilled in the art; as long as various change to limit and in the spirit and scope of the present invention determined in described claim; these changes are apparent, and all innovation and creation utilizing the present invention to conceive are all at the row of protection.
Claims (8)
1., based on a THz wave communication frequency switching device shifter for prism structure, it is characterized in that having:
THz wave emission part, for launching THz wave;
Prism portion, is arranged in the light path of described THz wave, and the plane of incidence is relative with described THz wave emission part, for receiving described THz wave, and conducts described THz wave;
Grating department, is arranged at the below of described prism portion reflecting surface, and described prism portion is spaced in intervals, and for the described THz wave that is coupled, comprises a plurality of the first groove alternately and the second groove;
Displacement platform portion, is connected with described prism portion and grating department respectively, for regulating the spacing between described prism portion and described grating department; And
THz wave acceptance division, relative with the exit facet in described prism portion, for receiving the described THz wave through this inclined-plane,
Wherein, described first groove is different with the groove depth of described second groove,
Described THz wave is coupled in described grating department with the form of evanescent waves,
Described displacement platform portion regulates the spacing between described prism portion and described grating department, and the described evanescent waves for different frequency is coupled in described grating department, realizes the switching of described THz wave communication frequency.
2. the THz wave communication frequency switching device shifter based on prism structure according to claim 1, is characterized in that:
Wherein, described prism portion is Dove prism.
3. the THz wave communication frequency switching device shifter based on prism structure according to claim 1, is characterized in that:
Wherein, the depth ratio of described first groove and described second groove is 1.5:1 ~ 5:1.
4. the THz wave communication frequency switching device shifter based on prism structure according to claim 1, is characterized in that:
Wherein, the spacing between described prism portion and described grating department is 70 μm ~ 700 μm.
5. the THz wave communication frequency switching device shifter based on prism structure according to claim 1, is characterized in that:
Wherein, the surface of described first groove and described second groove is metal film, and described metal film is any one in aluminium, copper, silver, iron, nickel, titanium, gold, zinc and alloy thereof,
The thickness of described metal film is greater than 400nm.
6. the THz wave communication frequency switching device shifter based on prism structure according to claim 1, is characterized in that:
Wherein, fill in described first groove and described second groove: any one in non-conductive gas, liquid, colloid and powder.
7. the THz wave communication frequency switching device shifter based on prism structure according to claim 1, is characterized in that:
Wherein, described displacement platform portion comprises the first displacement platform portion and second moving stage portion, described first displacement platform portion is connected with described prism portion, for regulating the position in described prism portion, described second moving stage portion is connected with described grating department, for regulating the spacing between described grating department and described prism portion
Described first displacement platform portion is identical with the structure in described second moving stage portion, includes horizontal position moving stage and vertical displacement platform.
8. use the THz wave communication frequency switching device shifter based on prism structure described in claim 1 to carry out the method for communication frequency switching, it is characterized in that, comprise the following steps:
Step one, adopts described THz wave emission part to launch described THz wave to the surface of emission in described prism portion, and it is inner that described THz wave is refracted into described prism portion by the described surface of emission;
Step 2, the bottom surface in described prism portion is adopted to reflect described THz wave, described THz wave is coupled in described grating department with the form of evanescent waves, surface plasma wave is formed on described grating department surface, and transmit in groove array, adopt described THz wave acceptance division the described THz wave be not coupled in described grating department to be received;
Step 3, adopts described displacement platform portion to regulate spacing between described lens section and described grating department, realizes the switching of THz wave communication frequency.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106066303A (en) * | 2016-05-24 | 2016-11-02 | 中国科学院重庆绿色智能技术研究院 | A kind of strengthen biomolecule Terahertz characteristic signal in solution receive runner prisms waveguide and preparation method thereof |
| CN108088810A (en) * | 2017-12-11 | 2018-05-29 | 上海理工大学 | A kind of humidity sensor and its system based on Terahertz plasma enhancement effect |
| CN111141686A (en) * | 2020-01-02 | 2020-05-12 | 上海理工大学 | Substance fingerprint spectrum sensing device and measuring method |
| WO2021134750A1 (en) * | 2020-01-02 | 2021-07-08 | 上海理工大学 | Substance fingerprint spectrum sensing device and measuring method |
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| CN103217739A (en) * | 2013-04-22 | 2013-07-24 | 上海理工大学 | Three-channel terahertz metal grating waveguide with compound period and application method |
| CN103576228A (en) * | 2013-11-14 | 2014-02-12 | 上海理工大学 | Non-periodic surface plasma grating type terahertz filter |
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| CN103217739A (en) * | 2013-04-22 | 2013-07-24 | 上海理工大学 | Three-channel terahertz metal grating waveguide with compound period and application method |
| CN103576228A (en) * | 2013-11-14 | 2014-02-12 | 上海理工大学 | Non-periodic surface plasma grating type terahertz filter |
Non-Patent Citations (8)
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106066303A (en) * | 2016-05-24 | 2016-11-02 | 中国科学院重庆绿色智能技术研究院 | A kind of strengthen biomolecule Terahertz characteristic signal in solution receive runner prisms waveguide and preparation method thereof |
| CN106066303B (en) * | 2016-05-24 | 2019-04-19 | 中国科学院重庆绿色智能技术研究院 | Nano-channel prism waveguide for enhancing terahertz characteristic signal of biomolecules in solution and preparation method thereof |
| CN108088810A (en) * | 2017-12-11 | 2018-05-29 | 上海理工大学 | A kind of humidity sensor and its system based on Terahertz plasma enhancement effect |
| CN108088810B (en) * | 2017-12-11 | 2020-12-01 | 上海理工大学 | A Humidity Sensor Based on Terahertz Plasma Enhancement Effect and Its System |
| CN111141686A (en) * | 2020-01-02 | 2020-05-12 | 上海理工大学 | Substance fingerprint spectrum sensing device and measuring method |
| WO2021134750A1 (en) * | 2020-01-02 | 2021-07-08 | 上海理工大学 | Substance fingerprint spectrum sensing device and measuring method |
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