CN104844197B - A kind of method for growing (100) preferred orientation bismuth titanate sodium base film on a silicon substrate - Google Patents
A kind of method for growing (100) preferred orientation bismuth titanate sodium base film on a silicon substrate Download PDFInfo
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Abstract
The invention belongs to electronic functional material field, and in particular to a kind of method for growing (100) preferred orientation bismuth titanate sodium base film on a silicon substrate.The chemical general formula of the series thin film is Na0.5Bi0.5Ti1‑yXyO3‑δ, wherein X is doped chemical；Y is the doping of doped chemical；δ is to maintain the number of oxygen atom that charge balance lost.The present invention on a silicon substrate, is prepared for the bismuth-sodium titanate base film with (100) preferred orientation using the chemical solution deposition technology of preparing of optimization.Whole preparation process of the invention is simple, easily-controllable, with low cost, and the film crystalline phase prepared is single, and preferred orientation degree is high.
Description
Technical field
The invention belongs to electronic functional material and devices field, and in particular to be one kind grow on a silicon substrate
(100) method of preferred orientation bismuth titanate sodium base film.
Background technology
It is difficult to sink in the ferro-electric device based on ferroelectricity-semiconductor heterostructure by perovskite structure, on silicon chip
The single Perovskite Phase of product.For example, Kumar et al. deposition growing PMN-PT film [bibliography on different substrates：P.
Kumar, Sonia, R.K. Patel, C. Prakash, T.C. Goel, Effect of substrates on
phase formation in PMN-PT 68/32 thin films by sol-gel process, Mater. Chem. Phys, 2008,110(1):7-10.].The result of research finds that the Perovskite Phase being deposited directly on silicon has only reached 49%.Together
Sample, to the bismuth-sodium titanate (Na of unleaded perovskite structure0.5Bi0.5TiO3) for film, due to silicon chip and Na0.5Bi0.5TiO3It is thin
The mistake matching degree of film is up to 40% so that pure Perovskite Phase is grown on monocrystalline silicon substrate extremely difficult.Gong et al. has found straight
Meet (the Na being grown on silicon0.8K0.2)0.5Bi0.5TiO3Almost without Perovskite Phase, Jiao Lvshi phase [bibliography is all： Y.Q.
Gong, R.J. Huang, X.J. Li, X.J. Zheng, Effects of lattice and thermal
mismatch induced by different seed layerson (Na0.8K0.2)0.5Bi0.5TiO3 ferroelectric
thin film, Appl. Mach. Mater, 2013, 291-294: 2636-2640].Although Kim et al. has grown many
Brilliant Perovskite Phase Na0.5Bi0.5TiO3Film, but still there is burnt green stone phase (at 30 ° of peak positions) [bibliography：C.Y. Kim,
The synthesis of lead-free ferroelectric Bi1/2Na1/2TiO3 thin film by solution
Sol-gel method,J. Sol-Gel. Sci. Tech, 2005, 33, 307-314] .As can be seen here, in monocrystalline silicon substrate
It is difficult to the Na for growing pure perovskite phase on piece0.5Bi0.5TiO3Film.
In addition, the miniaturization for realizing device using film, it is necessary to the uniformity of holding structure.Structure it is uneven
Property will cause the inhomogeneities of performance, and then directly influence the stability and reliability of device.But the film of mono-crystalline structures
High cost is prepared, technique is harsh.And the polycrystal film of preferred orientation has the performance for being similar to monocrystalline.Selected therefore, it is necessary to prepare
The film of excellent orientation realizes the optimization of performance.
The present invention grows bismuth-sodium titanate by the chemical solution deposition and Technology for Heating Processing of optimization on monocrystalline silicon substrate
Base film, the Na prepared0.5Bi0.5TiO3Base film has pure perovskite phase and with (100) preferred orientation.
The content of the invention
It is an object of the invention to provide a kind of Na of oriented growth0.5Bi0.5TiO3The preparation method of base film, more specifically
It is to disclose a kind of growth (100) preferred orientation Na on a silicon substrate0.5Bi0.5TiO3The method of base film.Prepared
Na0.5Bi0.5TiO3Base film has (100) preferred orientation, and good crystallinity, consistency are high.
Above-mentioned Na0.5Bi0.5TiO3The chemical general formula of base film is Na0.5Bi0.5Ti1-yXyO3-δ, wherein X is doped chemical；y
For the doping of doped chemical；δ is to maintain the number of oxygen atom that charge balance lost.
Above-mentioned Na0.5Bi0.5TiO3Doped chemical X is manganese ion, zirconium ion, zinc ion and iron ion in base film.
Above-mentioned Na0.5Bi0.5TiO3The preparation method of base film includes following steps：
(1) preparation of bismuth-sodium titanate base film precursor solution
1. it is raw material to choose sodium acetate, bismuth nitrate, manganese acetate, zirconium nitrate, zinc acetate, ferric nitrate and tetra-n-butyl titanate.
According to Na0.5Bi0.5Ti1-yXyO3-δStoichiometric proportion, accurately weigh raw material.Appropriate polyethylene glycol 20,000 is separately weighed, it is standby
Use
2. weigh a certain amount of acetylacetone,2,4-pentanedione the tetra-n-butyl titanate of equivalent is weighed in beaker, then and acetyl is added dropwise
In acetone.At room temperature, the chelating for completing titanium for 4-8 hours is stirred on magnetic stirring apparatus.It is defined as solution 1.
3. the dissolving of sodium, bismuth, manganese, zirconium, zinc and iron material can be one kind of following situations：
A is by the sodium acetate weighed, bismuth nitrate and manganese acetate（Or zinc acetate, ferric nitrate）It is dissolved in appropriate acetic acid 40
~ 60 °C of lower heating stirrings are defined as solution 2 up to being completely dissolved；
The sodium acetate weighed, bismuth nitrate are dissolved in appropriate acetic acid in 40 ~ 60 °C of lower heating stirrings until completely molten by b
Solution；The zirconium nitrate weighed is dissolved in 40 ~ 60 °C of lower heating stirrings in ethylene glycol monomethyl ether, does not wait solution cooling to be added dropwise appropriate
Acetylacetone,2,4-pentanedione to clarify.Two kinds of solution are mixed and are defined as solution 2.
4. the polyethylene glycol 20,000 weighed is dissolved in ethylene glycol monomethyl ether, in 50 ~ 70 °C of heating stirrings until completely molten
Solution, is defined as solution 3.
5. after after the cooling of all solution, solution 2, solution 3 are gradually added in solution 1, and is stirred on magnetic stirring apparatus
8 ~ 14 hours are mixed to being well mixed, the concentration of precursor solution is controlled in 0.2 ~ 0.4mol/L.
(2) cleaning of monocrystalline silicon substrate
1. acetone is cleaned by ultrasonic；2. absolute ethyl alcohol is cleaned by ultrasonic；3. the concentrated sulfuric acid:Hydrogen peroxide=1:1 boils and keeps 15min；
4. 10min is rinsed in the deionized water boiled；5. infrared lamp dry for standby；
(3) preparation of thin-film material：Annealing process layer by layer is combined with spin-coating method and prepares film
1. precursor solution is evenly coated on silicon chip using the method for spin coating, is then placed on electric boiling plate
It is upper to be pre-processed, then it is put into progress annealing in RTA stove
2. the film after annealing is repeated into said process, until the thickness of film reaches that 300~500nm thickness will
Ask.
In above-mentioned preparation process, heat treatment process is：Pre-processed 2 ~ 3 minutes at 250-300 °C, 120s be incubated at 300 °C,
Then 20s is incubated at 450 °C, is finally incubated 600s at 500 ~ 600 °C.
The present invention is prepared for the Na of preferred orientation on a silicon substrate first0.5Bi0.5TiO3Base film.The film of preparation has
(100) preferred orientation.
Brief description of the drawings
Fig. 1 is the Na grown on a silicon substrate0.5Bi0.5TiO3The X ray diffracting spectrum of film.Wherein, abscissa is to spread out
The θ of firing angle 2, ordinate is diffracted intensity.(100) degree of orientation is 93%.
Fig. 2 is the Na grown on a silicon substrate0.5Bi0.5TiO3The scanning electron microscope (SEM) photograph of film.
Fig. 3 is the Na grown on a silicon substrate0.5Bi0.5Ti0.98Mn0.02O3-δThe X ray diffracting spectrum of film.Wherein, it is horizontal
Coordinate is the θ of the angle of diffraction 2, and ordinate is diffracted intensity.(100) degree of orientation is 88%.
Fig. 4 is the Na grown on a silicon substrate0.5Bi0.5Ti0.98Mn0.02O3-δThe scanning electron microscope (SEM) photograph of film.
Fig. 5 is the Na grown on a silicon substrate0.5Bi0.5Ti0.98Zr0.02O3-δThe X ray diffracting spectrum of film.Wherein, it is horizontal
Coordinate is the θ of the angle of diffraction 2, and ordinate is diffracted intensity.(100) degree of orientation is 91%.
Fig. 6 is the Na grown on a silicon substrate0.5Bi0.5Ti0.98Zr0.02O3-δThe scanning electron microscope (SEM) photograph of film.
Fig. 7 is the Na grown on a silicon substrate0.5Bi0.5Ti0.99Zn0.01O3-δThe X ray diffracting spectrum of film.Wherein, it is horizontal
Coordinate is the θ of the angle of diffraction 2, and ordinate is diffracted intensity.(100) degree of orientation is 94%.
Fig. 8 is the Na grown on a silicon substrate0.5Bi0.5Ti0.99Zn0.01O3-δThe scanning electron microscope (SEM) photograph of film.
Fig. 9 is the Na grown on a silicon substrate0.5Bi0.5Ti0.99Fe0.01O3-δThe X ray diffracting spectrum of film.Wherein, it is horizontal
Coordinate is the θ of the angle of diffraction 2, and ordinate is diffracted intensity.(100) degree of orientation is 86%.
Figure 10 is the Na grown on a silicon substrate0.5Bi0.5Ti0.99Fe0.01O3-δThe scanning electron microscope (SEM) photograph of film.
Embodiment
With reference to specific embodiment, the present invention will be further elaborated, it is necessary to illustrate, the description below is only
In order to explain the present invention, its content is not limited.
Embodiment 1
(1) according to Na0.5Bi0.5TiO3Stoichiometric proportion, 0.3446g CH is weighed exactly3COONa (excessive 4 %),
2.1167g Bi (NO3)3·5H2O (excessive 8 %) and 0.3g polyethylene glycol 20,000, it is standby.2.78ml second is measured exactly
The tetra-n-butyl titanate that acyl acetone measures 2.78ml in beaker, then is added dropwise in acetylacetone,2,4-pentanedione, on magnetic stirring apparatus
Stirring completes the chelating of titanium for 4 hours, is defined as solution 1.By load weighted CH3COONa、Bi(NO3)3·5H2O, which is added to, to be filled
In the beaker of 15ml glacial acetic acid, in 40 °C of lower heating stirrings, until all dissolvings, are adding 5ml ethylene glycol monomethyl ether, definition
For solution 2.Load weighted polyethylene glycol 20,000 is added in the beaker for filling 5ml ethylene glycol monomethyl ethers, it is straight in 50 °C of heating stirrings
To whole dissolvings, solution 3 is defined as.After after the cooling of all solution, solution 2 and 3 is respectively added slowly in solution 1.Will be mixed
The solution got togather is positioned on magnetic stirring apparatus and stirred 8 hours.Obtain concentration uniform and stable for 0.23mol/L
Na0.5Bi0.5TiO3Precursor solution
(2) with sol evenning machine using the method for spin-coating by Na0.5Bi0.5TiO3Precursor solution is deposited on a silicon substrate.
The rotating speed of sol evenning machine is 4000r/min, and spin coating time is 30s.Then film is placed on electric boiling plate and pre-processed, pretreatment
Temperature is 250 °C, and the time of pretreatment is 2min or so.Finally film is placed in RTA stove and carried out at annealing
Reason.The technical process of annealing is：It is incubated under 300 °C under 120s, 450 °C and is incubated 20s, is incubated under certain annealing temperature
600s.First 6 layers of annealing temperature is that 550-570 °C, latter two layers of annealing temperature is 540-550 °C.Above-mentioned technical process is repeated,
Until film thickness reaches about 280nm.
Embodiment 2
(1) according to Na0.5Bi0.5Ti0.98Mn0.02O3-δStoichiometric proportion, 0.3446g CH is weighed exactly3COONa
(excessive 4 %), 2.1167g Bi (NO3)3·5H2O (excessive 8 %), 0.0396g C4H6MnO4·4H2O and 0.3g poly- second
Glycol 20,000, it is standby.The tetra-n-butyl titanate that 2.72ml acetylacetone,2,4-pentanedione measures 2.72ml in beaker, then is measured exactly
It is added dropwise in acetylacetone,2,4-pentanedione, the chelating for completing titanium for 6 hours is stirred on magnetic stirring apparatus, solution 1 is defined as.Will be load weighted
CH3COONa、Bi(NO3)3·5H2O、C4H6MnO4·4H2O is added in the beaker for the glacial acetic acid for filling 15ml to be heated under 50 °C
Stirring, until all dissolvings, are adding 5ml ethylene glycol monomethyl ether, be defined as solution 2.Load weighted polyethylene glycol 20,000 is added
Into the beaker for filling 5ml ethylene glycol monomethyl ethers, in 70 °C of heating stirrings until all dissolving, solution 3 is defined as.Treat all solution
After cooling, solution 2 and 3 is respectively added slowly in solution 1.The solution mixed is positioned on magnetic stirring apparatus and stirs 10
Hour.It is Na uniform and stable 0.23mol/L to obtain concentration0.5Bi0.5Ti0.98Mn0.02O3-δPrecursor solution
(2) with sol evenning machine using the method for spin-coating by Na0.5Bi0.5Ti0.98Mn0.02O3-δPrecursor solution is deposited on silicon
On substrate.The rotating speed of sol evenning machine is 4000r/min, and spin coating time is 30s.Then film is placed on electric boiling plate and pre-processed,
The temperature of pretreatment is 300 °C, and the time of pretreatment is 2min or so.Finally film is placed in RTA stove and carried out
Annealing.The technical process of annealing is：It is incubated under 300 °C under 120s, 450 °C and is incubated 20s, under certain annealing temperature
It is incubated 600s.Annealing temperature is 550 °C.Above-mentioned technical process is repeated, until film thickness reaches about 500nm.
Embodiment 3
(1) according to Na0.5Bi0.5Ti0.98Zr0.02O3Stoichiometric proportion, 0. 3446g CH is weighed exactly3COONa
(excessive 4 %), 2.1167g Bi (NO3)3·5H2O (excessive 8 %), 0.0639g Zr (NO3)4·5H2O and 0.3g poly- second
Glycol 20,000, it is standby.The tetra-n-butyl titanate that 2.72ml acetylacetone,2,4-pentanedione measures 2.72ml in beaker, then is measured exactly
It is added dropwise in acetylacetone,2,4-pentanedione, the chelating for completing titanium for 6 hours is stirred on magnetic stirring apparatus, solution 1 is defined as.Will be load weighted
Zr(NO3)4·5H2O adds 5ml ethylene glycol monomethyl ether heating stirring, does not wait solution cooling that 5ml acetylacetone,2,4-pentanedione is added dropwise extremely
Clarification.By load weighted CH3COONa、Bi(NO3)3·5H2O is added in the beaker for the glacial acetic acid for filling 15ml to be added under 50 °C
Thermal agitation, until all dissolvings.Above two solution is mixed and is defined as solution 2.Load weighted polyethylene glycol 20,000 is added to
In the beaker for filling 5ml ethylene glycol monomethyl ethers, in 60 °C of heating stirrings until all dissolving, solution 3 is defined as.Treat that all solution are cold
But after, solution 2 and 3 is respectively added slowly in solution 1.The solution mixed is positioned over stirring 12 on magnetic stirring apparatus small
When.It is Na uniform and stable 0.23mol/L to obtain concentration0.5Bi0.5Ti0.98Zr0.02O3Precursor solution
(2) with sol evenning machine using the method for spin-coating by Na0.5Bi0.5Ti0.98Zr0.02O3Precursor solution is deposited on silicon
On substrate.The rotating speed of sol evenning machine is 4000r/min, and spin coating time is 30s.Then film is placed on electric boiling plate and pre-processed,
The temperature of pretreatment is 250 °C, and the time of pretreatment is 2min or so.Finally film is placed in RTA stove and carried out
Annealing.The technical process of annealing is：It is incubated under 280 °C under 120s, 450 °C and is incubated 20s, under certain annealing temperature
It is incubated 600s.First 9 layers of annealing temperature is that 570-580 °C, latter 5 layers of annealing temperature is 560-570 °C.Repeat above-mentioned technique mistake
Journey, until film thickness reaches about 470nm.
Embodiment 4
(1) according to Na0.5Bi0.5Ti0.99Zn0.01O3-δStoichiometric proportion, 0.3446g CH is weighed exactly3COONa
(excessive 4 %), 2.1167g Bi (NO3)3·5H2O (excessive 8 %), 0.0177g C4H6ZnO4·4H2O and 0.3g poly- second
Glycol 20,000, it is standby.The tetra-n-butyl titanate that 2.75ml acetylacetone,2,4-pentanedione measures 2.75ml in beaker, then is measured exactly
It is added dropwise in acetylacetone,2,4-pentanedione, the chelating for completing titanium for 6 hours is stirred on magnetic stirring apparatus, solution 1 is defined as.Will be load weighted
CH3COONa、Bi(NO3)3·5H2O、C4H6ZnO4·4H2O is added in the beaker for the glacial acetic acid for filling 15ml to be heated under 40 °C
Stirring, until all dissolvings, are adding 5ml ethylene glycol monomethyl ether, be defined as solution 2.Load weighted polyethylene glycol 20,000 is added
Into the beaker for filling 5ml ethylene glycol monomethyl ethers, in 50 °C of heating stirrings until all dissolving, solution 3 is defined as.Treat all solution
After cooling, solution 2 and 3 is respectively added slowly in solution 1.The solution mixed is positioned on magnetic stirring apparatus and stirs 10
Hour.It is Na uniform and stable 0.23mol/L to obtain concentration0.5Bi0.5Ti0.99Zn0.01O3-δPrecursor solution
(2) with sol evenning machine using the method for spin-coating by Na0.5Bi0.5Ti0.99Zn0.01O3-δPrecursor solution is deposited on silicon
On substrate.The rotating speed of sol evenning machine is 4000r/min, and spin coating time is 30s.Then film is placed on electric boiling plate and pre-processed,
The temperature of pretreatment is 250 °C, and the time of pretreatment is 3min or so.Finally film is placed in RTA stove and carried out
Annealing.The technical process of annealing is：It is incubated under 260 °C under 120s, 450 °C and is incubated 20s, under certain annealing temperature
It is incubated 600s.First 7 layers of annealing temperature is that 560 °C, latter 6 layers of annealing temperature is 550 °C.Above-mentioned technical process is repeated, until
Film thickness reaches about 440nm.
Embodiment 5
(1) according to Na0.5Bi0.5Ti0.99Fe0.01O3-δStoichiometric proportion, 0.3446g CH is weighed exactly3COONa
(excessive 4 %), 2.1167g Bi (NO3)3·5H2O (excessive 8 %), 0.0177g C4H6ZnO4·4H2O and 0.3g poly- second
Glycol 20,000, it is standby.The tetra-n-butyl titanate that 2.75ml acetylacetone,2,4-pentanedione measures 2.75ml in beaker, then is measured exactly
It is added dropwise in acetylacetone,2,4-pentanedione, the chelating for completing titanium for 4 hours is stirred on magnetic stirring apparatus, solution 1 is defined as.Will be load weighted
CH3COONa、Bi(NO3)3·5H2O、C4H6ZnO4·4H2O is added in the beaker for the glacial acetic acid for filling 15ml to be heated under 50 °C
Stirring, until all dissolvings, are adding 5ml ethylene glycol monomethyl ether, be defined as solution 2.Load weighted polyethylene glycol 20,000 is added
Into the beaker for filling 5ml ethylene glycol monomethyl ethers, in 60 °C of heating stirrings until all dissolving, solution 3 is defined as.Treat all solution
After cooling, solution 2 and 3 is respectively added slowly in solution 1.The solution mixed is positioned on magnetic stirring apparatus and stirs 8
Hour.It is Na uniform and stable 0.23mol/L to obtain concentration0.5Bi0.5Ti0.99Fe0.01O3-δPrecursor solution
(2) with sol evenning machine using the method for spin-coating by Na0.5Bi0.5Ti0.99Fe0.01O3-δPrecursor solution is deposited on silicon
On substrate.The rotating speed of sol evenning machine is 4000r/min, and spin coating time is 30s.Then film is placed on electric boiling plate and pre-processed,
The temperature of pretreatment is 250 °C, and the time of pretreatment is 2min or so.Finally film is placed in RTA stove and carried out
Annealing.The technical process of annealing is：It is incubated under 270 °C under 120s, 450 °C and is incubated 20s, under certain annealing temperature
It is incubated 600s.First 4 layers of annealing temperature is that 560-570 °C, latter 4 layers of annealing temperature is 540-560 °C.Repeat above-mentioned technique mistake
Journey, until film thickness reaches about 300nm.
Claims (3)
1. a kind of method for growing (100) preferred orientation bismuth titanate sodium base film on a silicon substrate；The method of preparation is optimization
Chemical solution deposition and Technology for Heating Processing；It is characterized in that：With chemical general formula Na0.5Bi0.5Ti1-yXyO3-δ, wherein X is doping
Element；Y is the doping of doped chemical；δ is to maintain the number of oxygen atom that charge balance lost；Wherein, the titanium
The preparation technology of sour bismuth sodium base film includes following steps：
(1) preparation of bismuth-sodium titanate base film precursor solution
1) it is raw material to choose sodium acetate, bismuth nitrate, manganese acetate, zirconium nitrate, zinc acetate, ferric nitrate and tetra-n-butyl titanate；According to
Na0.5Bi0.5Ti1-yXyO3-δStoichiometric proportion, accurately weigh raw material；Appropriate polyethylene glycol 20,000 is separately weighed, it is standby；
2) weigh a certain amount of acetylacetone,2,4-pentanedione the tetra-n-butyl titanate of equivalent is weighed in beaker, then and acetylacetone,2,4-pentanedione is added dropwise
In；At room temperature, the chelating for completing titanium for 4-8 hours is stirred on magnetic stirring apparatus；It is defined as solution 1;
3) dissolving of sodium, bismuth, manganese, zirconium, zinc and iron material can be one kind of following situations：
A weighs any of sodium acetate and bismuth nitrate, and manganese acetate, zinc acetate, ferric nitrate raw material respectively, is dissolved in appropriate
In acetic acid, in 40 ~ 60 °C of lower heating stirrings until being completely dissolved, solution 2 is defined as;
The sodium acetate weighed, bismuth nitrate are dissolved in appropriate acetic acid by b, in 40 ~ 60 °C of lower heating stirrings until being completely dissolved；
The zirconium nitrate weighed is dissolved in 40 ~ 60 °C of lower heating stirrings in ethylene glycol monomethyl ether, does not wait solution cooling to be added dropwise appropriate
Acetylacetone,2,4-pentanedione is extremely clarified；Two kinds of solution are mixed and are defined as solution 2;
4) polyethylene glycol 20,000 weighed is dissolved in ethylene glycol monomethyl ether, it is fixed in 50 ~ 70 °C of heating stirrings until being completely dissolved
Justice is solution 3;
5) after all solution cooling after, solution 2, solution 3 are gradually added in solution 1, and on magnetic stirring apparatus stirring 8 ~
To being well mixed, the concentration of precursor solution is controlled in 0.2 ~ 0.4mol/L within 14 hours;
(2) cleaning of monocrystalline silicon substrate
1) acetone is cleaned by ultrasonic；2) absolute ethyl alcohol is cleaned by ultrasonic；3) concentrated sulfuric acid:Hydrogen peroxide=1:1 boils and keeps 15min；4) exist
10min is rinsed in the deionized water boiled；5) infrared lamp dry for standby；
(3) preparation of thin-film material：Annealing process layer by layer is combined with spin-coating method and prepares film
1) precursor solution is evenly coated on silicon chip using the method for spin coating, is then placed on electric boiling plate enterprising
Row pretreatment, then be put into RTA stove and made annealing treatment;
2) film after annealing is repeated into said process, until the thickness of film reaches 300 ~ 500nm thickness requirements.
2. one kind grows the method for (100) preferred orientation bismuth titanate sodium base film on a silicon substrate as described in the appended claim 1, its
It is characterized in：Doped chemical X is manganese ion, zirconium ion, zinc ion and iron ion.
3. one kind grows the method for (100) preferred orientation bismuth titanate sodium base film on a silicon substrate as described in claim 1,
It is characterized in that：Pre-processed 2 ~ 3 minutes at 250-300 °C, 120s is incubated at 300 °C, be then incubated 20s at 450 °C, finally exist
500-600 °C of insulation 600s.
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| CN104496468A (en) * | 2014-11-27 | 2015-04-08 | 济南大学 | Method for realizing coercive field reduction and pressure resistance improvement of sodium bismuth titanate-based film |
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| CN104496468A (en) * | 2014-11-27 | 2015-04-08 | 济南大学 | Method for realizing coercive field reduction and pressure resistance improvement of sodium bismuth titanate-based film |
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