CN104835717A - Pre-cleaning process before texturing process - Google Patents
Pre-cleaning process before texturing process Download PDFInfo
- Publication number
- CN104835717A CN104835717A CN201510129057.6A CN201510129057A CN104835717A CN 104835717 A CN104835717 A CN 104835717A CN 201510129057 A CN201510129057 A CN 201510129057A CN 104835717 A CN104835717 A CN 104835717A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- silicon slices
- cleaning
- air knife
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 238000005530 etching Methods 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000008216 herbs Nutrition 0.000 claims description 13
- 210000002268 wool Anatomy 0.000 claims description 13
- 235000012431 wafers Nutrition 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000011324 bead Substances 0.000 claims description 6
- 239000006260 foam Substances 0.000 claims description 6
- 210000005056 cell body Anatomy 0.000 claims description 5
- 230000005856 abnormality Effects 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims 1
- 238000005336 cracking Methods 0.000 abstract 1
- 239000003814 drug Substances 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000428 dust Substances 0.000 description 4
- 235000013312 flour Nutrition 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention discloses a pre-cleaning process before a texturing process. The process comprises the steps that (1) an automatic feeding machine transmits silicon slices to five rails separately; (2) the silicon slices enter a pre-cleaning water tank for cleaning according to the set speeds under the driving of rollers; (3) after cleaning, the residual water on the silicon slices is extruded by a soft roller at the tail end of the water tank; (4) the silicon slices are fed to an air knife groove, so that the silicon slices of which the surfaces are wet are dried under N2 atmosphere; (5) the silicon slices having hidden cracking severely in the step (4) are blown to crack, and the small broken silicon slices drop into an air knife groove body, and the large broken silicon slices enter a next slice pickup groove under the driving of the rollers; (6) cleaning and picking out the broken silicon slices in the step (5), and feeding the pre-cleaned silicon slices to the etching groove to carry out the cleaning and texturing. The silicon slices of the present invention is washed in the pre-cleaning water tank, then are dried in the air knife groove, so that the surfaces of the silicon slices entering the etching groove are guaranteed to be dry and clean, and the water is prevented from being brought to the etching groove to reduce the concentration of the medicine liquid in the etching groove.
Description
Technical field
The present invention relates to pre-cleaning processes before a kind of making herbs into wool operation, belong to solar cell fabrication process field.
Background technology
Nowadays silicon chip is transported to the process of battery Workshop Production from silicon chip factory, some silicon chip can affect cracked by external force, have some silicon chips not have cracked, but occurs hidden splitting, and between battery car when producing, silicon chip is directly taken out, and does not do any surface treatment and just carry out sour process for etching, when material loading, some hidden former silicon chips split are not separated in time, through each cell body or blanking air knife place, easily cracked, add fragment rate and lamination rate.Meanwhile, silicon chip is attached with a lot of silica flour, dust and foam beads.These spin offs can enter etching groove along with silicon chip, and liquid will be polluted, and have a strong impact on cleaning and texturing effect, finally affect conversion efficiency.
The traditional processing technology flow process of crystal-silicon solar cell is divided into 7 steps now, and its flow process is as follows:
Silicon chip → cleaning and texturing → diffusion → etching edge removes PSG → PECVD → silk screen printing → oven dry sintering → testing, sorting.
Existing technology fails to carry out preliminary treatment before silicon chip enters etching groove, make some silica flours, dust and foam beads be brought into etching groove liquid by silicon chip, pollute liquid, and foam beads is getting lodged on circulation filter screen, time has been grown and will have a strong impact on the circulation of etching groove liquid, causes concentration unstable; Simultaneously when material loading, some hidden former silicon chips split are not separated in time, and through each cell body or blanking air knife place, easily cracked, the probability of fragment rate and lamination is all very high, are unfavorable for improving qualification rate.
Summary of the invention
In order to overcome above-mentioned defect, the invention provides and a kind ofly effectively can be separated pre-cleaning processes before the hidden making herbs into wool operation split silicon chip and effectively know silicon chip surface foreign material.
The present invention in order to the technical scheme solving its technical problem and adopt is: pre-cleaning processes before a kind of making herbs into wool operation, comprises the following steps:
(1) silicon chip is sent to five tracks by automatic charging machine respectively;
(2) silicon chip enters prerinse tank clean according to the speed of setting under the drive of roller;
(3) after cleaned, silicon chip is transported to effluent trough, water residual on silicon chip squeezes out by the soft roller of effluent trough end, and the number of described soft roller is one;
(4) after, silicon chip sends into air knife groove, makes surperficial still moister silicon chip at N
2be dried under atmosphere;
(5) in step (4), seriously the hidden silicon chip split will be blown and split, and little broken silicon wafers will fall into air knife cell body, and large broken silicon wafers will enter next and pick up film trap under roller drives;
(6) examine sheet personnel clear up the broken silicon wafers in step (5) and choose, silicon chip good for prerinse is sent into etching groove and carries out cleaning and texturing.
As a further improvement on the present invention, in step (4), the operational environment of air knife groove can set according to needs of production, and its air knife nitrogen flow rate is 100m
3/ min ~ 200m
3/ min, bake out temperature is 50 DEG C ~ 85 DEG C, as long as within the scope of this.
As a further improvement on the present invention, in step (5), next picks up film trap is the dead slot body not reacting liquid, and Manufacturing Worker picks up the silicon chip on film trap both sides monitoring roller at this, avoids entering etching groove if the silicon chip noted abnormalities can be chosen in time.
The invention has the beneficial effects as follows: the rinsing bowl of this patent, surperficial prerinse is carried out to the silicon chip preparing to carry out sour making herbs into wool, removes surperficial silica flour, dust and foam beads, decrease the pollution of silicon chip attachment to etching groove liquid, improve making herbs into wool quality; After rinsing bowl, air knife is installed simultaneously, dries up the water of silicon chip surface, effectively separated hidden sliver, reduce board lamination probability, improve and produce line qualification rate.
Embodiment
Below in conjunction with embodiment, the present invention will be further elaborated.
Pre-cleaning processes before a kind of making herbs into wool operation, comprises the following steps:
(1) silicon chip is sent to five tracks by automatic charging machine respectively;
(2) silicon chip enters prerinse tank clean according to the speed of setting under the drive of roller;
(3) after cleaned, silicon chip is transported to effluent trough, the soft roller installed by effluent trough end squeezes out by water residual on silicon chip, and described soft roller is one;
(4) after, silicon chip sends into air knife groove, makes surperficial still moister silicon chip at N
2be dried under atmosphere;
(5) in step (4), seriously the hidden silicon chip split will be blown and split, and little broken silicon wafers will fall into air knife cell body, and large broken silicon wafers will enter next and pick up film trap under roller drives;
(6) examine sheet personnel clear up the broken silicon wafers in step (5) and choose, silicon chip good for prerinse is sent into etching groove and carries out cleaning and texturing.
In step (4), the operational environment of air knife groove can set according to needs of production, and its air knife nitrogen flow rate is 100 ~ 200m
3/ min, bake out temperature is 50 ~ 85 DEG C.
In step (5), next picks up film trap is the dead slot body not reacting liquid, and Manufacturing Worker picks up the silicon chip on film trap both sides monitoring roller at this, avoids entering etching groove if the silicon chip noted abnormalities can be chosen in time.
The rinsing bowl of this patent, carries out surperficial prerinse to the silicon chip preparing to carry out sour making herbs into wool, removes surperficial silica flour, dust and foam beads, decrease the pollution of silicon chip attachment to etching groove liquid, improve making herbs into wool quality; After rinsing bowl, air knife is installed simultaneously, dries up the water of silicon chip surface, effectively separated hidden sliver, reduce board lamination probability, improve and produce line qualification rate;
Silicon chip of the present invention first crosses the washing of prerinse tank, then dries up through air knife groove, and ensure that the silicon chip surface not only drying but also clean entering etching groove, anti-sealing is brought into etching groove and reduces etching groove liquor strength; Also be specially provided with an inspection film trap monitored for employee, for picking cracked silicon chip simultaneously.
Claims (4)
1. a pre-cleaning processes before making herbs into wool operation, is characterized in that: comprise the following steps:
(1) silicon chip is sent to five tracks by automatic charging machine respectively;
(2) silicon chip enters prerinse tank clean according to the speed of setting under the drive of roller;
(3) after cleaned, silicon chip is transported to effluent trough, water residual on silicon chip will be squeezed out;
(4) after, silicon chip sends into air knife groove, makes surperficial still moister silicon chip at N
2be dried under atmosphere;
(5) in step (4), seriously the hidden silicon chip split will be blown and split, and little broken silicon wafers will fall into air knife cell body, and large broken silicon wafers will enter next and pick up film trap under roller drives;
(6) examine sheet personnel clear up the broken silicon wafers in step (5) and choose, silicon chip good for prerinse is sent into etching groove and carries out cleaning and texturing.
2. pre-cleaning processes before making herbs into wool operation according to claim 1, is characterized in that: the end of described effluent trough is provided with a soft roller, and soft roller dewaters to silicon chip in rolling process, and washes away some dusts and the foam beads of silicon chip surface.
3. pre-cleaning processes before making herbs into wool operation according to claim 1 and 2, it is characterized in that: in step (5), next picks up film trap is the dead slot body not reacting liquid, Manufacturing Worker picks up the silicon chip on film trap both sides monitoring roller at this, avoids entering etching groove if the silicon chip noted abnormalities can be chosen in time.
4. pre-cleaning processes before making herbs into wool operation according to claim 3, is characterized in that: in step (4), the operational environment of air knife groove is: air knife nitrogen flow rate is 100m
3/ min ~ 200m
3/ min, bake out temperature is 50 DEG C ~ 85 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510129057.6A CN104835717B (en) | 2015-03-23 | 2015-03-23 | Pre-cleaning processes before a kind of making herbs into wool process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510129057.6A CN104835717B (en) | 2015-03-23 | 2015-03-23 | Pre-cleaning processes before a kind of making herbs into wool process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104835717A true CN104835717A (en) | 2015-08-12 |
| CN104835717B CN104835717B (en) | 2018-04-17 |
Family
ID=53813526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510129057.6A Active CN104835717B (en) | 2015-03-23 | 2015-03-23 | Pre-cleaning processes before a kind of making herbs into wool process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104835717B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068802A (en) * | 2016-12-29 | 2017-08-18 | 中建材浚鑫科技股份有限公司 | Improve the pretreatment unit and its processing method of polysilicon chip etching matte uniformity |
| CN108155118A (en) * | 2017-12-06 | 2018-06-12 | 中建材浚鑫科技有限公司 | A kind of polysilicon chip cleaning system and its cleaning method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276856A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for etching and drying silicon solar cell |
| CN101950779A (en) * | 2010-09-07 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing solar cell in situ |
| CN102507440A (en) * | 2011-10-20 | 2012-06-20 | 高佳太阳能股份有限公司 | Method for detecting surface subfissure of silicon wafers |
| CN202940263U (en) * | 2012-10-31 | 2013-05-15 | 广东爱康太阳能科技有限公司 | Spray velvet preparation system |
| CN203648868U (en) * | 2013-12-30 | 2014-06-18 | 西安隆基硅材料股份有限公司 | Silicon slice detection device |
| CN203674239U (en) * | 2013-11-28 | 2014-06-25 | 合肥海润光伏科技有限公司 | Wet etching water-draining device |
-
2015
- 2015-03-23 CN CN201510129057.6A patent/CN104835717B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101276856A (en) * | 2008-04-30 | 2008-10-01 | 苏州纳米技术与纳米仿生研究所 | Process and equipment for etching and drying silicon solar cell |
| CN101950779A (en) * | 2010-09-07 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing solar cell in situ |
| CN102507440A (en) * | 2011-10-20 | 2012-06-20 | 高佳太阳能股份有限公司 | Method for detecting surface subfissure of silicon wafers |
| CN202940263U (en) * | 2012-10-31 | 2013-05-15 | 广东爱康太阳能科技有限公司 | Spray velvet preparation system |
| CN203674239U (en) * | 2013-11-28 | 2014-06-25 | 合肥海润光伏科技有限公司 | Wet etching water-draining device |
| CN203648868U (en) * | 2013-12-30 | 2014-06-18 | 西安隆基硅材料股份有限公司 | Silicon slice detection device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068802A (en) * | 2016-12-29 | 2017-08-18 | 中建材浚鑫科技股份有限公司 | Improve the pretreatment unit and its processing method of polysilicon chip etching matte uniformity |
| CN108155118A (en) * | 2017-12-06 | 2018-06-12 | 中建材浚鑫科技有限公司 | A kind of polysilicon chip cleaning system and its cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104835717B (en) | 2018-04-17 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 214400 No. 1011 Chengcheng Road, Shengang Town, Jiangyin City, Wuxi City, Jiangsu Province Patentee after: In building materials jetion science and Technology Co Ltd Address before: 214400 No. 1011 Chengcheng Road, Shengang Town, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: China National Building Materials Group Corporation Jetion Solar (China) Co., Ltd. |
|
| CP01 | Change in the name or title of a patent holder |