CN104834477B - Method for writing data and device based on flash memory - Google Patents
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Abstract
The present invention provides a kind of method for writing data based on flash memory, which comprises receives initial data write request；It polymerize multiple initial data write requests according to the data volume of the corresponding data to be written of the initial data write request, matches the data volume total amount of the corresponding data to be written of data write request of polymerization with the positive integer times of block capacity；According to the data write request of the polymerization, the free physical block of quantity corresponding with the multiple of the matched piece of capacity is determined in a flash memory, the corresponding data to be written of the data write request of the polymerization are written to the free physical block of the determination.Method for writing data provided by the invention based on flash memory, it is all to carry out in blocks that data and erasing data, which are written, ensure that the consistent of write-in and erasing, can effectively avoid write-in scale-up problem.The present invention also provides a kind of data transfer apparatus based on flash memory.
Description
Technical field
The present invention relates to field of computer technology, more particularly to a kind of method for writing data and device based on flash memory.
Background technique
Flash memory is a kind of widely used storage medium, wherein Nand Flash(Nand type flash memory, a kind of non-volatile sudden strain of a muscle
Deposit) it is a kind of novel flash memory, have read or write speed fast, vibrationless with solid state hard disk, the storage card etc. of Nand type flash memory production
Advantage is widely used in the fields such as military, vehicle-mounted, industry control, video monitoring, electric power, medical treatment, internet.
The basic structure of Nand type flash memory includes several pieces, and each piece includes several pages again.The size of block is greater than the ruler of page
Very little, by taking current typical case's Nand type flash memory as an example, block size is generally 2M byte, and page size is generally 8K byte.
Nand type flash memory can repeat to write, but repeat to have to carry out erasing operation before writing, and to Nand type flash memory
Erasing operation will affect its service life.Wherein, the erasing of Nand type flash memory is in blocks, and to Nand type flash memory
Read-write is usually as unit of page.If repeating to write to the same address of Nand type flash memory, need in corresponding piece of the address
Data are read out, and after data content to be written more new data, then execute erasing operation, then again by updated data
In block after write-in erasing.This process leads to very slow repetition writing rate, while also bringing the problem of write-in is amplified.It writes
Enter scale-up problem refer to be written into data write-in Nand type flash memory in during, the data volume of write-in, than data to be written
The data volume of itself is more.
To solve the problems, such as write-in amplification in traditional technology, using Nand type flash memory as the solid state hard disk of storage medium and storage
Card design scheme introduces hardware mapping layer.The read/write address of Nand type flash memory is divided into two kinds of addresses, physics by hardware mapping layer
Address and logical address.The read/write address of user's triggering is logical address, and logical address passes through the conversion of hardware mapping layer, from patrolling
It collects address and switchs to physical address, just really execute read-write.The same logical address is write in repetition, by the conversion of hardware mapping layer
Afterwards, different physical address can be write, and is invalid data by the corresponding data markers of physical address before, therefore avoid
Erasing operation, can reduce write-in scale-up problem.
But Nand type flash memory is after multiple read-write operation, and in the same in Nand type flash memory, part is significant figure
According to part is invalid data, and empty block is no or seldom, just needs to carry out garbage reclamation at this time.Garbage reclamation needs to read
Valid data in multiple pieces are integrated into the redundant space reserved in Nand type flash memory by the valid data in multiple pieces
Then block is wiped the block of only invalid data, to discharge the block of invalid data occupancy.But the process of garbage reclamation introduces
The write operation of Nand type flash memory internal, is exaggerated the number write, and may cause the lost of life of Nand type flash memory.And reserved
Redundant space causes the memory space for user storage data to reduce, and redundant space is bigger, easier to store in user
Garbage reclamation is carried out in the case that space is full, write-in scale-up problem is more serious.
Summary of the invention
Based on this, it is necessary to there are problems that write-in amplification Nand type flash memory, provide a kind of data based on flash memory
Wiring method and device.
A kind of method for writing data based on flash memory, which comprises
Receive initial data write request；
It polymerize multiple initial data according to the data volume of the corresponding data to be written of the initial data write request
Write request makes the data volume total amount of the corresponding data to be written of data write request of polymerization and the positive integer times of block capacity
Match；
According to the data write request of the polymerization, the determining multiple with the matched piece of capacity in Nand type flash memory
The determination is written in the corresponding data to be written of the data write request of the polymerization by the free physical block of corresponding quantity
Free physical block.
A kind of data transfer apparatus based on flash memory, described device include:
Data write request receiving module, for receiving initial data write request；
Aggregation module, it is multiple for being polymerize according to the data volume of the corresponding data to be written of the initial data write request
The initial data write request makes the data volume total amount and block capacity of the corresponding data to be written of data write request of polymerization
Positive integer times matching；
Data write. module, for the data write request according to the polymerization, determined in Nand type flash memory with it is described
The free physical block of the corresponding quantity of the multiple of matched piece of capacity, the data write request of the polymerization is corresponding to be written
The free physical block of the determination is written in data.
Multiple initial data write requests polymerize by the above-mentioned method for writing data based on flash memory, and the data polymerizeing are write
Enter and the data volume total amount of corresponding data to be written requested to match with the positive integer times of block capacity, then to matched piece of capacity
The corresponding quantity of multiple free physical block in data to be written corresponding to the data write request of polymerization are written.It is every in this way
It is secondary that data, the data volume total amount energy of the corresponding data to be written of the data write request of the polymerization of write-in is written to free physical block
It is enough to cover one or more physical blocks, the operation such as movement and erasing of data is not needed, realizes and is write in blocks
Enter.It is all to carry out in blocks that data and erasing data, which are written, ensure that the consistent of write-in and erasing, can effectively avoid write-in
Scale-up problem.
Detailed description of the invention
Fig. 1 is the flow diagram of the method for writing data based on flash memory in one embodiment；
Fig. 2 is the data write request in one embodiment according to polymerization, is determined and matched piece in Nand type flash memory
The free physical block of the corresponding quantity of the multiple of capacity determines the corresponding data write-in to be written of the data write request of polymerization
Free physical block the step of process；
Fig. 3 is the structural block diagram of the data writing systems based on flash memory in one embodiment；
Fig. 4 is the structural block diagram of the data transfer apparatus based on flash memory in one embodiment；
Fig. 5 is the structural block diagram of one embodiment of the Data write. module in Fig. 4；
Fig. 6 is the structural block diagram of one embodiment of the block mapping block in Fig. 5；
Fig. 7 is the structural block diagram of the data transfer apparatus based on flash memory in another embodiment；
Fig. 8 is the structural block diagram of the data transfer apparatus based on flash memory in one embodiment.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The description of specific distinct unless the context otherwise, the present invention in element and component, the shape that quantity both can be single
Formula exists, and form that can also be multiple exists, and the present invention is defined not to this.Although step in the present invention with label into
It has gone arrangement, but is not used to limit the precedence of step, unless expressly stated the order of step or holding for certain step
Based on row needs other steps, otherwise the relative rank of step is adjustable.It is appreciated that used herein
Term "and/or" one of is related to and covers associated listed item or one or more of any and all possible groups
It closes.
As shown in Figure 1, in one embodiment, provide a kind of method for writing data based on flash memory, the present embodiment with
This method is applied to Nand type flash memory and illustrates, it is to be appreciated that this method can be applied to it is any in blocks into
The flash memory of row erasing.This method comprises:
Step 102, initial data write request is received.
When user is intended to that data are written into Nand type flash memory, initial data write-in is triggered by preset data-interface of writing
Request, write-in request of data correspond to data to be written.Terminal receive the initial data request and with write-in request of data it is corresponding
Data to be written.
Step 104, multiple initial data are polymerize according to the data volume of the corresponding data to be written of initial data write request
Write request makes the data volume total amount of the corresponding data to be written of data write request of polymerization and the positive integer times of block capacity
Match.
Terminal pre-set buffer area, the size of buffer area are set according to actual needs, herein without limitation.Terminal exists
Multiple write-in request of data and corresponding data to be written are buffered in buffer area, thus according to corresponding to initial data write request
Data to be written data volume, multiple initial data write requests are polymerize, it is desirable that the data write request pair of polymerization
The data volume total amount for the data to be written answered is matched with the positive integer times of block capacity.
Wherein, block capacity refers to the data volume that a physical block or logical block can accommodate, such as a block institute energy
The data volume of receiving is 2M byte, then block capacity is 2M byte.The positive integer times of block capacity such as can be 2M byte, 4M word
Section, 6M byte, 8M byte etc..
The data volume total amount of the corresponding data to be written of the data write request of polymerization is matched with the positive integer times of block capacity,
It can be the positive integer times that above-mentioned data volume total amount is equal to block capacity；Or above-mentioned data volume total amount be greater than the total amount of data
The deviation of the block capacity of immediate positive integer times is in default value range.Here the deviation of two values can refer to two values
Difference or difference absolute value, be also possible to the ratio of two values.
For example, another is former if the data volume of the corresponding data to be written of an initial data write request is 1M
The data volume of the corresponding data to be written of beginning data write request is 0.9M, it is assumed that when data volume total amount and is greater than the total amount of data
The ratio of block capacity of immediate positive integer times polymerize when [0.9,1] is interior.Then since the ratio of 1.9M and 2M exist
Within [0.9,1], so two initial data write requests can polymerize, and the data volume total amount of corresponding data to be written
For 1.9M.For another example, if the data volume of the corresponding data to be written of three initial data write requests be respectively 1.5M, 1.5M and
0.8M, due to total amount of data and be 3.8M, with the block capacity, that is, 4M for being greater than the total amount of data and immediate positive integer times
Ratio is within [0.9,1], so three initial data write requests can polymerize.
Step 106, according to the data write request of polymerization, determination is corresponding with the multiple of matched piece of capacity in a flash memory
The free physical block of quantity, by the determining free physical block of the corresponding data write-in to be written of the data write request of polymerization.
Specifically, according to the data write request of polymerization, respective numbers need to be determined according to the multiple of matched piece of capacity
Free physical block.It, can be by the data write request of polymerization when data to be written are written into determining multiple free physical blocks
After corresponding data to be written are divided equally according to the quantity of determining free physical block, it is respectively written into the free physical of each determination
Block；Or can write it is full a free physical block is subsequent continues next physical block, here with no restrictions.
For example, if the data volume of the corresponding data to be written of three initial data write requests be respectively 1.5M,
1.5M and 0.8M, then the multiple of matched piece of capacity is 2 times, needs to determine 2 free physical blocks in Nand type flash memory at this time,
The total 3.8M of data is written into again to be bisected into 2 free physical blocks of data write-in determination of two 1.9M.
Multiple initial data write requests polymerize by the above-mentioned method for writing data based on flash memory, and the data polymerizeing are write
Enter and the data volume total amount of corresponding data to be written requested to match with the positive integer times of block capacity, then to matched piece of capacity
The corresponding quantity of multiple free physical block in data to be written corresponding to the data write request of polymerization are written.It is every in this way
It is secondary that data, the data volume total amount energy of the corresponding data to be written of the data write request of the polymerization of write-in is written to free physical block
It is enough to cover one or more physical blocks, the operation such as movement and erasing of data is not needed, realizes and is write in blocks
Enter.It is all to carry out in blocks that data and erasing data, which are written, ensure that the consistent of write-in and erasing, can effectively avoid write-in
Scale-up problem.
Erasing to Nand type flash memory physical block is the process to charge to physical block, and physical structure causes erasing to be grasped
The minimum operation unit of work must be physical block.It is wiped in traditional technology by page read-write, by block, reads and writes the size with erasing in this way
It is inconsistent, be cause write-in amplify basic reason.The present embodiment is realized from software level guarantees that write-in is consistent with erasing,
Cost of implementation is low.And will not cause to generate junk data because of multiple write operations are carried out to same, it does not need to set
Redundant space is set to carry out garbage reclamation, the memory space so as to which these are originally used for garbage reclamation releases, and is used to
Storing data enhances the performance of Nand type flash memory.And under the mixed mode of read-write, garbage reclamation is avoided, it will not be because of
Nand type flash memory carries out garbage reclamation and corresponding block unit is prevented to ensure that readwrite performance from responding read-write requests, even if
Reusability will not cause performance to decline.
As shown in Fig. 2, in one embodiment, step 106 specifically includes:
Step 202, corresponding for the data write request of polymerization as unit of logical block according to the data write request of polymerization
Data to be written distribute continuous logical address；The quantity of the corresponding logical block of the logical address of distribution and matched piece of capacity
Multiple it is consistent.
It take basic unit as the data write request pair of polymerization of logical block after terminal obtains the data write request of polymerization
The data to be written answered distribute continuous logical address.Wherein logical block is virtual block, virtual capacity and physical block one
It causes.Logical address is virtual address, can be a binary sequence, can determine the position in logical block according to logical address
It sets.Logical address can specifically include logical block address, logical page address and logic column address, and wherein logical row address indicates to patrol
Collect specific byte location in page；Or logical address may include logical block address, logical block bias internal amount.
The corresponding data to be written of data write request as unit of logical block for polymerization distribute continuous logical address,
The logical address for referring to the corresponding data to be written of the data write request of polymerization is at least continuous in logical block.It is multiple to patrol
The logical address collected between block is also possible to continuously, indicates that write a full logical block writes next logical block again at this time.Such as
The corresponding logical address of data to be written is 1000-2000 in the corresponding data to be written of the data write request of polymerization,
The corresponding logical address of so next data to be written just must be since 2001.
The quantity of the corresponding logical block of the logical address of distribution is consistent with the multiple of matched piece of capacity, so that distribution is patrolled
The quantity for collecting the corresponding logical block in address is equal with the multiple of block capacity, to guarantee to have enough spaces that data to be written are written.
Step 204, the free physical block by the corresponding logical block maps of the logical address of distribution into flash memory, is corresponded to
The physical address of the corresponding data to be written of the data write request of polymerization, and the corresponding logical block of logical address for recording distribution
With the mapping relations of the physical block of mapping.
Specifically, its corresponding logical block can be determined according to the logical address of distribution, by the corresponding logical block maps
To the free physical block in Nand type flash memory, and then obtain physical address.
Physical address may include physical block address, physical page address and physics column address, wherein the object in physical address
Manage page address and physics column address can in the logical address of distribution logical page address and logic column address it is consistent, only need true
Determine physical block address, and physical block address can be determined according to the block identification of the physical block of mapping.
After completing mapping, the mapping for needing to record the corresponding logical block of logical address of distribution and the physical block of mapping is closed
System, or can recorde the mapping relations of logical address and physical address, according to the data to be read when in order to read data
Logical address determine its physical address in Nand type flash memory, thus complete read data operation.
Step 206, the data write request of polymerization is written into the free physical block of mapping according to the physical address of acquisition
Corresponding data to be written.
Physical address can be accurately located at the specific location in free physical block, can be according to the physical address directly to sky
Data to be written corresponding to the data write request of polymerization are written in not busy physical block.
Even if being written by block, but data are repeatedly written to same physical block and also result in write-in scale-up problem.Therefore,
In the present embodiment, by step 202~step 206, logical address is first distributed as unit of logical block, then by the logic of distribution
For the corresponding logical block maps in address to the free physical block in Nand type flash memory, the data write request for obtaining corresponding polymerization is corresponding
Data to be written physical address, and the data write-in of polymerization is written according to the physical address into the free physical block of mapping
The corresponding data to be written of request.It can avoid directly being repeatedly written data to same physical block by mapping block in this way and lead
Cause write-in scale-up problem.
And the problem of due to production technology, Nand type flash memory can all have bad object when leaving the factory or in subsequent use
Block is managed, if directly may result in write-in failure to physical block write-in data, therefore can avoid by mapping block because of bad physical block
Caused write-in failure problem.
In one embodiment, in step 204, by sky of the corresponding logical block maps of the logical address of distribution into flash memory
The step of not busy physical block, including step 11)~step 12):
Step 11) obtains the erasing of idle physical block in flash memory or has been written into number.
Each physical block of Nand type flash memory can correspond to a block message, wiped or had been written into including the physical block
Number can also include indicating whether the data in the physical block information such as effectively mark.Or it can be by real time to object
The erase or write operation of reason block is counted to obtain the erasing of idle physical block in Nand type flash memory or have been written into number.
Step 12) will according to the preferential mapping order for having wiped or having had been written into number ascending order of physical block idle in flash memory
Free physical block of the corresponding logical block maps of the logical address of distribution into flash memory.
Since the service life of flash memory is limited, it cannot wipe or be written infinitely, so certain mechanism should be used, with
Guarantee that each physical block approximate equalization uses, avoids certain physical blocks from reaching service life in advance, to influence entire flash memory
Use.
Therefore, specifically, in the present embodiment, free physical block chained list can be established, it is corresponding every in free physical block chained list
A physical block has wiped or has had been written into the sequence arrangement of number ascending order according to it.When the physical block that selection needs to map every time, root
It is preferentially chosen according to free physical block chained list and has currently wiped or had been written into the least free physical block of number and mapped
In the present embodiment, by step 11)~step 12), by the wiping for obtaining idle physical block in Nand type flash memory
Number is removed or has been written into, to wipe or have been written into preferentially reflecting for number ascending order according to physical block idle in Nand type flash memory
It penetrates sequence and carries out block mapping, preferentially used so that wiping or being written the few physical block of number, made with reaching the equilibrium of physical block
With avoiding the use that a small number of physical blocks reach service life in advance and influence entire Nand type flash memory.
In one embodiment, being somebody's turn to do the method for writing data based on flash memory further includes step 21)~step 22):
Step 21) receives data read request, according to the mapping relations of the logical block and physical block that have recorded, and number
According to the logical address of data to be read corresponding to read requests, the physical address of data to be read in a flash memory is determined.
It according to the logical address of distribution when write-in data, is mapped by block, is finally single with physical block according to physical address
Data are written into Nand type flash memory in position, and have recorded the mapping relations of logical block and physical block.It, can root when therefore reading data
Corresponding logical block is determined according to the logical address of data to be read, to close according to the mapping of the logical block and physical block recorded
System determines the physical block in the Nand type flash memory where data to be read, so as to according to determining physics block identification and to
The logical address for reading data determines the physical address of data to be read.
Step 22) reads unit by preset data according to determining physical address and reads data；The default unit that reads is less than
Or it is equal to a block capacity.
Unit is read according to preset data and reads data, is referred to and is read the data that preset data reads unit-sized every time,
The default unit that reads can be a byte, perhaps can be a page capacity or is also possible to a block capacity, can basis
Need to set suitable default reading unit.
In the present embodiment, above-mentioned steps 21) in~step 22), it not will lead to write-in scale-up problem when reading data, because
This is not limited to read data by page, in fact data can be read according to any default unit that reads, to guarantee to read data
Flexibility.
It in one embodiment, should method for writing data based on flash memory further include: every prefixed time interval or every
Preset time point obtains the erasing for having the physical block of data in Nand type flash memory or has been written into number, will wipe or
Write-in number is transferred to lower than the data of frequency threshold value having in the physical block of data and has currently wiped or had been written into number most
Few free physical block, and the mapping relations of the logical block of more new record and physical block.
According to active degree difference, the data stored in Nand type flash memory can be divided into dynamic data and static data, wherein
Dynamic data refers to the data often operated, and static data refers to the lower data of operating frequency.Static number is stored in this way
According to physical block seldom carry out erase or write operation so that these physical blocks erasing or write-in number be far below other physics
The erasing of block or write-in number, cause each physical block using unbalanced.
Therefore, in the present embodiment, every prefixed time interval or every preset time point, such as at interval of 1 day or January,
Or 9 points etc. at night of every Friday, it obtains the erasing for having the physical block of data in Nand type flash memory or has been written into number.So
It is static data that number, which will have been wiped or had been written into afterwards, lower than the data judging in the physical block for having data of frequency threshold value, from
And static data is transferred to and has currently wiped or had been written into the least free physical block of number, to reach the equal of each physical block
Weighing apparatus uses, and guarantees the service life of Nand type flash memory.
Wherein, frequency threshold value can be the use with Nand type flash memory and dynamic change, for example frequency threshold value can be with
It is positively correlated with the average value for having wiped or having had been written into number of free physical blocks all in Nand type flash memory or frequency threshold value can
To be the difference for currently having wiped or having had been written into number at least value and a preset constant.
In one embodiment, the above-mentioned method for writing data based on flash memory can be applied to a kind of data based on flash memory and write
Enter system, is somebody's turn to do the structure of the data writing systems based on flash memory as shown in figure 3, including application layer module, software image layer
Module and hardware flash memory device layer module.
Specifically, application layer module is asked for receiving initial data write request, and then according to initial data write-in
It asks the data volume of corresponding data to be written to polymerize multiple initial data write requests, keeps the data write request of polymerization corresponding
The data volume total amount of data to be written is matched with the positive integer times of block capacity.It is subsequently used for the data write request according to polymerization,
The corresponding data to be written of data write request as unit of logical block for polymerization distribute continuous logical address；Wherein, divide
The quantity of the corresponding logical block of the logical address matched is consistent with the multiple of matched piece of capacity.
Software image layer module, for obtaining the erasing of idle physical block in Nand type flash memory or having been written into number；It presses
According to the preferential mapping order for having wiped or having had been written into number ascending order of physical block idle in Nand type flash memory, logically by distribution
For the corresponding logical block maps in location to the free physical block in Nand type flash memory, the data write request for obtaining corresponding polymerization is corresponding
The physical address of data to be written, and the mapping of the corresponding logical block of logical address for recording distribution and the physical block of mapping is closed
System.
Polymerization is written for the physical address according to acquisition into the free physical block of mapping for hardware flash memory device layer module
Data write request corresponding to data to be written.
As shown in figure 4, in one embodiment, providing a kind of data transfer apparatus based on flash memory, which includes:
Data write request receiving module 420, aggregation module 440 and Data write. module 460.
Data write request receiving module 420, for receiving initial data write request.
Aggregation module 440, it is multiple for being polymerize according to the data volume of the corresponding data to be written of initial data write request
Initial data write request, the data volume total amount for making the corresponding data to be written of data write request of polymerization and block capacity are just
Integral multiple matching.
Aggregation module 440 is used to buffer multiple write-in request of data and corresponding data to be written in pre-set buffer area,
To the data volume of the data to be written according to corresponding to initial data write request, multiple initial data write requests are carried out
Polymerization, wherein the positive integer times of the data volume total amount of the corresponding data to be written of the data write request polymerizeing and block capacity
Match.
The data volume total amount of the corresponding data to be written of the data write request of polymerization is matched with the positive integer times of block capacity,
It can be the positive integer times that above-mentioned data volume total amount is equal to block capacity；Or above-mentioned data volume total amount be greater than the total amount of data
The deviation of the block capacity of immediate positive integer times is in default value range.Here the deviation of two values can refer to two values
Difference or difference absolute value, be also possible to the ratio of two values.
Data write. module 460 determines and matched piece of capacity in a flash memory for the data write request according to polymerization
The corresponding quantity of multiple free physical block, by the determining sky of the corresponding data to be written write-in of the data write request of polymerization
Not busy physical block.
Specifically, Data write. module 460 is used for the data write request according to polymerization, according to times of matched piece of capacity
Number determines the free physical block of respective numbers.When the data write request institute that polymerization is written into determining multiple free physical blocks
When corresponding data to be written, the corresponding data to be written of the data write request that Data write. module 460 can be used for polymerize
After dividing equally according to the quantity of determining free physical block, it is respectively written into the free physical block of each determination；Or full one can write
A free physical block is subsequent to continue next physical block, here with no restrictions.
Multiple initial data write requests polymerize by the above-mentioned data transfer apparatus based on flash memory, and the data polymerizeing are write
Enter and the data volume total amount of corresponding data to be written requested to match with the positive integer times of block capacity, then to matched piece of capacity
The corresponding quantity of multiple free physical block in data to be written corresponding to the data write request of polymerization are written.It is every in this way
It is secondary that data, the data volume total amount energy of the corresponding data to be written of the data write request of the polymerization of write-in is written to free physical block
It is enough to cover one or more physical blocks, the operation such as movement and erasing of data is not needed, realizes and is write in blocks
Enter.It is all to carry out in blocks that data and erasing data, which are written, ensure that the consistent of write-in and erasing, can effectively avoid write-in
Scale-up problem.
Erasing to Nand type flash memory physical block is the process to charge to physical block, and physical structure causes erasing to be grasped
The minimum operation unit of work must be physical block.It is wiped in traditional technology by page read-write, by block, reads and writes the size with erasing in this way
It is inconsistent, be cause write-in amplify basic reason.It will not cause to generate rubbish because of multiple write operations are carried out to same
Rubbish data, therefore setting redundant space is not needed to carry out garbage reclamation, so as to which these are originally used for depositing for garbage reclamation
Storage space releases, and is used to storing data, enhances the performance of Nand type flash memory.And read and write under mixed mode, it avoids
Garbage reclamation will not prevent corresponding block unit from responding read-write requests because Nand type flash memory carries out garbage reclamation,
It ensure that readwrite performance, performance will not be caused to decline Reusability.
As shown in figure 5, in one embodiment, Data write. module 460 includes: that logical address distribution module 462, block reflect
Penetrate module 464 and write-in execution module 466.
Logical address distribution module 462 is polymerization as unit of logical block for the data write request according to polymerization
The corresponding data to be written of data write request distribute continuous logical address；The number of the corresponding logical block of the logical address of distribution
It measures consistent with the multiple of matched piece of capacity.
After logical address distribution module 462 is used to obtain the data write request of polymerization, it is by basic unit of logical block
The corresponding data to be written of the data write request of polymerization distribute continuous logical address.Wherein logical block is virtual block,
Virtual capacity is consistent with physical block.Logical address is virtual address, can be a binary sequence, can according to logical address
To determine the position in logical block.Logical address can specifically include logical block address, logical page address and logic column address,
Wherein logical row address indicates specific byte location in logical page (LPAGE)；Or logical address may include logical block address, logic
Block bias internal amount.
Data write request of the logical address distribution module 462 for as unit of logical block for polymerization is corresponding to be written
Data distribute continuous logical address, refer to that the logical address of the corresponding data to be written of the data write request of polymerization at least exists
It is continuous in logical block.Logical address between multiple logical blocks is also possible to continuously, indicates to write a full logic at this time
Block writes next logical block again.
The quantity of the corresponding logical block of the logical address of distribution is consistent with the multiple of matched piece of capacity, so that distribution is patrolled
The quantity for collecting the corresponding logical block in address is equal with the multiple of block capacity, to guarantee that the data for having enough space write-in polymerizations are write
Enter the corresponding data to be written of request.
Block mapping block 464, free physical of the corresponding logical block maps of logical address into flash memory for that will distribute
Block, obtains the physical address of the corresponding data to be written of data write request of corresponding polymerization, and records the logical address of distribution
The mapping relations of corresponding logical block and the physical block of mapping.
Specifically, block mapping block 464 is used to determine its corresponding logical block according to the logical address of distribution, by this
Corresponding logical block maps obtain physical address to the free physical block in Nand type flash memory.
Physical address may include physical block address, physical page address and physics column address, wherein the object in physical address
Manage page address and physics column address can in the logical address of distribution logical page address and logic column address it is consistent, only need true
Determine physical block address, and physical block address can be determined according to the block identification of the physical block of mapping.
Block mapping block 464 is used for after completing mapping, records the corresponding logical block of logical address and the mapping of distribution
The mapping relations of physical block, or can recorde the mapping relations of logical address and physical address, root when in order to read data
Its physical address in a flash memory is determined according to the logical address for the data to be read, to complete the operation of reading data.
Execution module 466 is written, polymerization is written into the free physical block of mapping for the physical address according to acquisition
Data to be written corresponding to data write request.
The specific position that write-in execution module 466 is used to be accurately located at according to determining physical address in free physical block
It sets, so that number to be written corresponding to the data write request of polymerization directly be written into free physical block according to the physical address
According to.
Even if being written by block, but data are repeatedly written to same physical block and also result in write-in scale-up problem.Therefore,
In the present embodiment, logical address is first distributed as unit of logical block, then by the corresponding logical block maps of the logical address of distribution
To the free physical block in Nand type flash memory, the corresponding data to be written of data write request of corresponding polymerization are obtained physically
Location, and number to be written corresponding to the data write request of polymerization is written into the free physical block of mapping according to the physical address
According to.Data can be avoided directly being repeatedly written by mapping block in this way to same physical block leads to that scale-up problem is written.
And the problem of due to production technology, Nand type flash memory can all have bad object when leaving the factory or in subsequent use
Block is managed, if directly may result in write-in failure to physical block write-in data, therefore can avoid by mapping block because of bad physical block
Caused write-in failure problem.
As shown in fig. 6, in one embodiment, block mapping block 464 includes: to have wiped or had been written into number to obtain module
464a and mapping execution module 464b.
It has wiped or has had been written into number and obtained module 464a, for obtaining the erasing of idle physical block in flash memory or having write
Indegree.
Each physical block of Nand type flash memory can correspond to a block message, wiped or had been written into including the physical block
Number can also include indicating whether the data in the physical block information such as effectively mark.Or it wipes or has had been written into and is secondary
Number acquisition module 464a can be used for hollow to obtain flash memory by being counted in real time to the erase or write operation of physical block
The erasing of not busy physical block has been written into number.
Execution module 464b is mapped, for having wiped or having had been written into the excellent of number ascending order according to physical block idle in flash memory
Free physical block of the corresponding logical block maps of the logical address of distribution into flash memory is obtained corresponding polymerization by first mapping order
The corresponding data to be written of data write request physical address, and the corresponding logical block of logical address for recording distribution with reflect
The mapping relations for the physical block penetrated.
In the present embodiment, free physical block chained list can be established, in free physical block chained list corresponding each physical block according to
Its sequence arrangement for having wiped or having had been written into number ascending order.Mapping execution module 464b can be used for the object for selecting to need to map every time
When managing block, is preferentially chosen according to free physical block chained list and current wiped or had been written into the least free physical block of number and reflected
It penetrates.
In the present embodiment, by obtaining the erasing of idle physical block in Nand type flash memory or having been written into number, to press
Block mapping is carried out according to the preferential mapping order for having wiped or having had been written into number ascending order of physical block idle in Nand type flash memory, so that
It wipes or is written the few physical block of number preferentially to be used, used with reaching the balanced of physical block, avoid a small number of physical blocks and mention
Before reach service life and influence the use of entire Nand type flash memory.
As shown in fig. 7, in one embodiment, which further includes data read module 480, comprising: physical address is true
Cover half block 482 and reading execution module 484.
Physical address determining module 482, read requests for receiving data, according to the logical block and physical block recorded
The logical address of data to be read corresponding to mapping relations and data read request, determines data to be read in a flash memory
Physical address.
It according to the logical address of distribution when write-in data, is mapped by block, is finally single with physical block according to physical address
Data are written into Nand type flash memory in position, and have recorded the mapping relations of logical block and physical block.When therefore reading data, physics
Address determination module 482 can be used for determining corresponding logical block according to the logical address of data to be read, thus according to having recorded
Logical block and the mapping relations of physical block determine the physical block in the Nand type flash memory where data to be read, so as to
In the physical address for determining data to be read according to the logical address of determining physics block identification and data to be read.
Execution module 484 is read, reads data for reading unit by preset data according to determining physical address；It is default
It reads unit and is less than or equal to a block capacity.
Unit is read according to preset data and reads data, is referred to and is read the data that preset data reads unit-sized every time,
The default unit that reads can be a byte, perhaps can be a page capacity or is also possible to a block capacity, can basis
Need to set suitable default reading unit.
In the present embodiment, write-in scale-up problem not will lead to when reading data, therefore be not limited to read number by page
According in fact data can be read according to any default unit that reads, to guarantee to read the flexibility of data.
As shown in figure 8, in one embodiment, which further includes data migration module 490, for every preset time
Interval or every preset time point obtain the erasing for having the physical block of data in Nand type flash memory or have been written into number, will
It has wiped or has had been written into number and be transferred to lower than the data of frequency threshold value having in the physical block of data and currently wiped or
The least free physical block of number, and the mapping relations of the logical block of more new record and physical block are written.
In the present embodiment, data migration module 490 is used for every prefixed time interval or every preset time point, it obtains
There is the erasing of the physical block of data in Nand type flash memory or has been written into number.Then number will have been wiped or has had been written into be lower than
The data judging of frequency threshold value having in the physical block of data is static data, has currently been wiped so that static data is transferred to
The least free physical block of number is removed or had been written into, is used with reaching the balanced of each physical block, guarantees making for Nand type flash memory
Use the service life.
Wherein, frequency threshold value can be the use with Nand type flash memory and dynamic change, for example frequency threshold value can be with
It is positively correlated with the average value for having wiped or having had been written into number of free physical blocks all in Nand type flash memory or frequency threshold value can
To be the difference for currently having wiped or having had been written into number at least value and a preset constant.
Those of ordinary skill in the art will appreciate that realizing all or part of the process in above-described embodiment method, being can be with
Relevant hardware is instructed to complete by computer program, the program can be stored in a computer-readable storage and be situated between
In matter, the program is when being executed, it may include such as the process of the embodiment of above-mentioned each method.Wherein, the storage medium can be
Magnetic disk, CD, read-only memory (Read-Only Memory, ROM) or random access memory (Random Access
Memory, RAM) etc..
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (5)
1. a kind of method for writing data based on flash memory, which comprises
Receive initial data write request；
According to the multiple initial data write-ins of the data volume of the corresponding data to be written of initial data write request polymerization
Request matches the data volume total amount of the corresponding data to be written of data write request of polymerization with the positive integer times of block capacity；
According to the data write request of the polymerization, quantity corresponding with the multiple of the matched piece of capacity is determined in a flash memory
Free physical block, the corresponding data to be written of the data write request of the polymerization are written to the free physical of the determination
Block；
Wherein, the data write request according to the polymerization determines the multiple with the matched piece of capacity in a flash memory
The determination is written in the corresponding data to be written of the data write request of the polymerization by the free physical block of corresponding quantity
Free physical block, comprising:
According to the data write request of the polymerization, as unit of logical block be the polymerization data write request it is corresponding to
Data are written and distribute continuous logical address；The quantity of the corresponding logical block of the logical address of the distribution with described matched piece
The multiple of capacity is consistent；
By free physical block of the corresponding logical block maps of the logical address of the distribution into flash memory, the corresponding polymerization is obtained
The corresponding data to be written of data write request physical address, and the corresponding logical block of logical address for recording the distribution
With the mapping relations of the physical block of the mapping, the free physical block is to have wiped or had been written into number lower than preset threshold
The least non-bad physical block of number has currently been wiped or had been written into free physical block, and the preset threshold is to make with flash memory
With and the frequency threshold value of dynamic change, physical address include physical block address, physical page address and physics column address, wherein physics
Physical page address and physics column address in address in the logical address of distribution logical page address and logic column address it is consistent；
Every prefixed time interval or every preset time point, obtain the physical block for having data in the flash memory erasing or
Number is had been written into, will wipe or had been written into number and be transferred to lower than the data in the physical block for having data of frequency threshold value and worked as
It is preceding to have wiped or had been written into the least free physical block of number, and the mapping for updating the logical block and physical block of the record is closed
System；
The data write request of the polymerization is written into the free physical block of the mapping according to the physical address of the acquisition
Corresponding data to be written；
Data read request is received, according to the mapping relations of the logical block and physical block recorded and data read request institute
The logical address of corresponding data to be read determines the physical address of the data to be read in a flash memory；
Unit, which is read, by preset data according to the physical address of the determination reads data；The default reading unit is less than or waits
In a block capacity, including a byte perhaps a page capacity or a block capacity.
2. the method according to claim 1, wherein the corresponding logical block of the logical address by the distribution
The free physical block being mapped in flash memory obtains the physics of the corresponding data to be written of data write request of the corresponding polymerization
Address, and the mapping relations of the corresponding logical block of logical address for recording the distribution and the physical block of the mapping, comprising:
It obtains the erasing of idle physical block in the flash memory or has been written into number；
According to the preferential mapping order for having wiped or having had been written into number ascending order of physical block idle in the flash memory, by the distribution
Free physical block of the corresponding logical block maps of logical address into flash memory, obtain the data write request of the corresponding polymerization
The physical address of corresponding data to be written, and the object for the logical address corresponding logical block and the mapping for recording the distribution
Manage the mapping relations of block.
3. a kind of data transfer apparatus based on flash memory, which is characterized in that described device includes:
Data write request receiving module, for receiving initial data write request；
Aggregation module, for multiple described according to the polymerization of the data volume of the corresponding data to be written of the initial data write request
Initial data write request, the data volume total amount for making the corresponding data to be written of data write request of polymerization and block capacity are just
Integral multiple matching；
Data write. module determines and described matched piece appearance in a flash memory for the data write request according to the polymerization
Institute is written in the corresponding data to be written of the data write request of the polymerization by the free physical block of the corresponding quantity of the multiple of amount
State determining free physical block；
Wherein, the Data write. module includes:
Logical address distribution module is the polymerization as unit of logical block for the data write request according to the polymerization
The corresponding data to be written of data write request distribute continuous logical address；The corresponding logic of the logical address of the distribution
The quantity of block is consistent with the multiple of the matched piece of capacity；
Block mapping block, for the free physical block by the corresponding logical block maps of the logical address of the distribution into flash memory,
The physical address of the corresponding data to be written of data write request of the corresponding polymerization is obtained, and records the logic of the distribution
The mapping relations of the corresponding logical block in address and the physical block of the mapping, the free physical block are secondary to have wiped or having had been written into
Number is current lower than in the free physical block of preset threshold to have wiped or has had been written into the least non-bad physical block of number, the default threshold
Value is the use with flash memory and the frequency threshold value of dynamic change, physical address include physical block address, physical page address and object
Column address is managed, wherein the logical page address in the physical page address in physical address and physics column address and the logical address of distribution
It is consistent with logic column address；
Data migration module, for obtaining in the flash memory and having data every prefixed time interval or every preset time point
Physical block erasing or have been written into number, will wipe or had been written into number be lower than frequency threshold value the physics for having data
Data in block, which are transferred to, has currently wiped or has had been written into the least free physical block of number, and updates the logical block of the record
With the mapping relations of physical block；
Execution module is written, is written for the physical address according to the acquisition into the free physical block of the mapping described poly-
The corresponding data to be written of the data write request of conjunction；
Data read module, comprising:
Physical address determining module, read requests, are closed according to the mapping of the logical block and physical block recorded for receiving data
The logical addresses of data to be read corresponding to system and data read request determines the data to be read in a flash memory
Physical address；
Execution module is read, reads data for reading unit by preset data according to the physical address of the determination；It is described pre-
If reading unit is less than or equal to a block capacity, including a byte perhaps a page capacity or a block capacity.
4. device according to claim 3, which is characterized in that described piece of mapping block include:
It has wiped or has had been written into number and obtained module, for obtaining the erasing of idle physical block in the flash memory or having been written into secondary
Number；
Execution module is mapped, for having wiped or having had been written into preferentially reflecting for number ascending order according to physical block idle in the flash memory
Penetrate sequence, by free physical block of the corresponding logical block maps of the logical address of the distribution into flash memory, corresponded to described in
The physical address of the corresponding data to be written of the data write request of polymerization, and the logical address that records the distribution is corresponding patrols
Collect the mapping relations of the physical block of block and the mapping.
5. a kind of computer readable storage medium, which is characterized in that be stored with computer program, the meter in the storage medium
Calculation machine program is loaded by processor and is executed to realize the data write-in side based on flash memory as described in claim 1 to 2 is any
Method.
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| CN106294195B (en) * | 2016-07-19 | 2019-06-21 | 深圳市领存技术有限公司 | A kind of control method and system of 3D flash memory |
| CN108089822A (en) * | 2017-12-20 | 2018-05-29 | 北京京存技术有限公司 | Management method, system, equipment and the storage medium of storage chip |
| CN108959517B (en) * | 2018-06-28 | 2021-06-01 | 河南思维轨道交通技术研究院有限公司 | File management method and device and electronic equipment |
| WO2020000480A1 (en) * | 2018-06-30 | 2020-01-02 | 华为技术有限公司 | Data storage method and data storage device |
| CN111949560B (en) * | 2019-05-16 | 2024-01-23 | 兆易创新科技集团股份有限公司 | Data writing method and device and storage equipment |
| US11556275B2 (en) | 2021-05-18 | 2023-01-17 | Micron Technology, Inc. | Techniques for page line filler data |
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| CN103324273A (en) * | 2012-03-19 | 2013-09-25 | 联想(北京)有限公司 | Electronic equipment and control method thereof |
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