CN104828774A - P-type silicon microchannel based surface uniform nano modification method - Google Patents
P-type silicon microchannel based surface uniform nano modification method Download PDFInfo
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Abstract
The invention relates to the technical field of nano-grade material and microstructure, and discloses a method for uniformly growing a nanostructured material on a uniform chemically nickel-plated silicon microchannel substrate structure. The method comprises the following steps: silicon microchannels with a needed shape and separated from a silicon substrate are cut with laser; a uniform nickel conductive layer is grown on the surfaces of the microchannels with a chemical nickel-plating method; a nickel deposition time is adjusted, such that the resistance of the nickel-plated silicon microchannels is lower than 2ohm; a layer of nanostructure is grown on the surfaces of the nickel-plated microchannels with a hydrothermal method, wherein the nanostructure is composed of a composite metal oxide CoMoO4. According to the invention, the nanostructure is grown on the surfaces and insides of the nickel-plated silicon microchannels with micron-grade pore sizes with the hydrothermal method, such that the uniformity and stability of the structure are improved, and a problem of severe microchannel blockage caused by physically delivering materials to the inner sides of the microchannels is avoided. The material has good electrochemical activity, and has certain potential to be used in the field of new energy.
Description
Technical field
The invention belongs to micro-electromechanical system field, relate to a kind of method nano-modified based on p-type silicon micro-channel surface uniform particularly.
Background technology
Nano-modifiedly entering the problem extensively studied in material science decades, be characterized at silicon, metal surface, metal oxide, the surface such as carbon-coating makes the decorative material of one deck yardstick at Nano grade.This decorative layer has a wide range of applications, and comprises lithium ion battery, sensor, super capacitor etc.The making of nano material makes the specific area of the active material being deposited on nano-material surface be greatly improved, and active material usefulness is fully utilized, and then improves the performance of device.So far, most of nano material is all based upon on irregular structure, such as nickel foam, carbon cloth, or even on the material of sheet metal and so on, seldom has Fabrication of nanostructures on the silicon micro-channel of rule.So this patent has very large realistic meaning.
Nanometer molybdenum science and technology comprises three research fields: the detection of nanoscale Mo, nanoscale molybdenum device, molybdenum materials and aluminium device nano-scale dimension and sign.Nanometer Mo is the basis of nanometer molybdenum science and technology; The Development Level of nanometer molybdenum device and level of application weigh the important symbol whether we enter nanometer era; The detection of nanoscale is the indispensable means of nanometer molybdenum Technological research with characterizing.Therefore, nanometer Mo synthesis, detect and be characterized in nanometer molybdenum sciemtifec and technical sphere and seem particularly important.
By the molybdate that high temperature solid state reaction or high-energy ball milling method obtain, there is good degree of crystallinity, as optical material, demonstrate good luminescent properties.But solid phase reaction exists the shortcoming of inevitable high temperature, high energy consumption, complex process, and the particle size of preparation is comparatively large, shape irregularity.With the main development direction that Liquid preparation methods molybdate nano material is current, mainly contain hard template method, soft template method, the precipitation method, hydro-thermal method, microemulsion method, organic composite precursor process etc.
Summary of the invention
The object of the invention is to provide a kind of method nano-modified based on p-type silicon micro-channel surface uniform; To solve the problems referred to above of prior art.
The object of the invention is to be achieved through the following technical solutions:
Based on the method that p-type silicon micro-channel surface uniform is nano-modified, the steps include:
(1) chemical nickel plating: ready-made silicon micro-channel version is cut into required size, shape by the mode of laser cutting; By the silicon micro-channel physics of well cutting and chemical method cleaning, put into the nickel plating solution configured, under the water bath of 40 ~ 90 DEG C, carry out electrochemistry nickel plating;
(2) electrochemistry nickel plating: in order to improve the thickness of surperficial nickel dam, improves the electric conductivity of sample, needs the electrochemical method of the sample surfaces after chemical nickel plating to deposit the nickel dam of one deck 10 ~ 300nm thickness;
(3) growth of nanostructures: the silicon micro-channel processed is put into the reaction solution configured and use Hydrothermal Growth petal-shaped material, the ambient deposition CoMoO of this HTHP
4nanostructured shows good uniformity and uniformity.
The process met certain requirements to be carried out in step (1) after silicon micro-channel and substrate separation, comprise steps such as cutting cleaning, be deposited on the catalyst of microchannel surface as nano material grown using metallic nickel equilibrium after these steps.The method of process, by the mixed liquor organics removal of sulfuric acid and hydrogen peroxide, uses concentrated hydrochloric acid heavy-metal ion removal, makes to spend and draw logical solution to carry out surface-active-treatment to microchannel surface.
Wherein,
In step (1), described chemical sinking effusion is the NiCl containing 0.1 ~ 2mol/L
26H
2the Na of O, 0.1 ~ 2mol/L
2hPO
47H
2the NH of O, 0.1 ~ 2mol/L
4cl, and use ammoniacal liquor to regulate solution ph to 6 ~ 9.Through the row chemical nickel plating of 1 ~ 40 minute under 90 C water bath's environment.
In step (2), described electrochemical deposition liquid is the Ni (NO containing 0.05 ~ 2mol/L
3)
26H
2the mixed liquor of O and boric acid; At room temperature will adjust distance to electrode and sample electrode is 0.1 ~ 2cm, and deposition current 10 ~ 200mA, electrodeposition time is 50 ~ 300 seconds.
In step (3), described hydro-thermal reaction solution is the (NH of 10 ~ 100mmol/L
4) 6Mo
7o
244H
2the CoCl of O and 10 ~ 100mmol/L
26H
2the mixed liquor of O, and by hydro-thermal method hydro-thermal 0.5 ~ 2.5 hour at 120 ~ 220 DEG C of temperature.The density of control surface nano material is carried out by the length and temperature controlling the above-mentioned hydro-thermal time.
The present invention, in conjunction with the actual features of nickel plating silicon microchannel plate, prepares CoMoO with hydro-thermal method
4nano material.Utilize the nickel particle on nickel plating silicon microchannel plate surface as nucleation metallic particles, under the condition of HTHP, particle purity high, good dispersion, the good crystalline produced by hydro-thermal method and can control, the CoMoO that production cost is low
4/ Ni/Si-MCPs composite nano materials.The powder prepared by hydro-thermal method is generally without the need to sintering, and this just can be avoided crystal grain in sintering process to grow up and impurity such as to be easily mixed at the shortcoming.So, the CoMoO that the present invention obtains
4the good crystalline form of nano material and excellent chemical property.
This material itself is that good nanometer supporting construction can be used for manufacturing liquid sensor etc. and self also has electro-chemical activity simultaneously and can use as new energy materials.
Accompanying drawing explanation
Fig. 1 a is the microchannel surface pattern without any process after laser cutting;
Fig. 1 b is the microchannel interior pattern without any process after laser cutting;
Fig. 2 a is the microchannel surface pattern after chemical nickel plating;
Fig. 2 b is the pattern of the microchannel sidewall after chemical nickel plating,
Fig. 3 a is that the microchannel surface after Nickel Plating Treatment grows one deck CoMoO
4appearance of nano material figure;
Fig. 3 b is the CoMoO on single microchannel pore
4appearance of nano material figure;
Fig. 4 a is that the microchannel surface after Nickel Plating Treatment grows one deck CoMoO
4appearance of nano material figure;
Fig. 4 b is the CoMoO on single microchannel pore
4appearance of nano material figure;
Fig. 5 a is the microchannel sidewall growth one deck CoMoO after Nickel Plating Treatment
4appearance of nano material figure;
Fig. 5 b is the CoMoO on the sidewall of single microchannel
4appearance of nano material figure
The RXD of the nano material of Fig. 6 made by the present invention, the material CoMoO just synthesized by calibration experiment checking such as Raman, TEM
4.Wherein, (a) XRD; (b) Raman; (c) high-resolution and electronic diffraction; D () high-resolution lattice structure characterizes.
Fig. 7 a is prepared CoMoO
4the cyclic voltammetric electro-chemical test curve map that material carries out in 2M KOH solution;
Fig. 7 b is prepared CoMoO
4the discharge and recharge electro-chemical test curve map that material carries out in 2M KOH solution.
Detailed description of the invention
The present invention is described in further detail for specific embodiments and the drawings, and protection content of the present invention is not limited to following examples.Under the spirit and scope not deviating from inventive concept, the change that those skilled in the art can expect and advantage are all included in the present invention, and are protection domain with appending claims.
This method uses the silicon microchannel plate made of MEMS technology, be laser-cut into required shape and clean, surperficial attached nickel, hydrothermal deposition CoMoO
4, electro-chemical activity test.
1, pretreatment, chooses the silicon microchannel plate prepared, by Fig. 1 a and Fig. 1 b, surface topography as illustrated in figs. ia and ib, can see that there are the structure of rule and large specific area in microchannel:
1) silicon microchannel plate is through the regular shape needed for laser cutting acquisition, silicon microchannel plate is cut into the disk that diameter is 12mm here.
2) silicon microchannel plate of well cutting is removed heavy metal ion and the organic matter on surface through RC cleaning.
3) cleaned silicon microchannel plate is put into draw water flowing solution to soak 10min.
2, the attached nickel of electrode surface:
In order to provide CoMoO
4nanostructure growth provides good basis for nucleation, by cleaned silicon microchannel plate surface and inwall uniform electroless deposition layer of metal nickel particle.Deposit the silicon microchannel plate shape characteristic of nano nickle granules as shown in Fig. 2 a, 2b and Fig. 3 a, 3b.By Fig. 2 a and can see that nickel covers the surface of microchannel uniformly; Fig. 2 b can see that nickel covers the inside of microchannel uniformly.Can be seen by Fig. 3 a, Fig. 3 b and again deposit layer of metal nickel by electro-deposition on the silicon micro-channel surface of uniform deposition nickel, this layer has compared with heavy thickness and higher electric conductivity, improves the actual use value of nanostructured microchannel.
2, the process of electroless deposition is as follows:
Embodiment 1:
1) configure electroless nickel plating solutions, solution composition comprises the NiCl of 2mol/L
26H
2the Na of O, 2mol/L
2hPO
47H
2the NH of O, 2mol/L
4cl.
2) by step 1) solution that configures instills the pH value that a certain amount of ammoniacal liquor regulates solution, makes its pH value 9.
3) by step 2) electroplate liquid after adjustment pH value puts into water-bath and is heated to 90 DEG C, put into by silicon microchannel plate cleaned in 1 and keep 40 minutes.The sample surface morphology obtained is as Fig. 2 a, 2b; By Fig. 2 a and can see that nickel covers the surface of microchannel uniformly; Fig. 2 b can see that nickel covers the inside of microchannel uniformly.
4) by step 3) sample of electroless deposition nickel carries out electrochemical deposition nickel dam to strengthen sample electric conductivity, and deposit fluid is the Ni (NO containing 2mol/L
3)
26H
2the mixed liquor of O and boric acid; At room temperature will adjust distance to electrode and sample electrode is 2cm, deposition current 200mA, and electrodeposition time is 300 seconds.The sample surface morphology obtained as shown in Figure 3 a, 3 b.Can be seen by Fig. 3 a, Fig. 3 b and again deposit layer of metal nickel by electro-deposition on the silicon micro-channel surface of uniform deposition nickel, this layer has compared with heavy thickness and higher electric conductivity, improves the actual use value of nanostructured microchannel.
5) silicon microchannel plate of Ni plated being put into vacuum drying chamber keeps temperature to be 90 DEG C, dries after two hours and takes out.
Embodiment 2:
1) configure electroless nickel plating solutions, solution composition comprises the NiCl of 0.1mol/L
26H
2the Na of O, 0.1mol/L
2hPO
47H
2the NH of O, 0.1mol/L
4cl.
2) by step 1) solution that configures instills the pH value that a certain amount of ammoniacal liquor regulates solution, makes its pH value 7.
3) by step 2) electroplate liquid after adjustment pH value puts into water-bath and is heated to 50 DEG C, put into by silicon microchannel plate cleaned in 1 and keep 10 minutes.The sample surface morphology obtained is as Fig. 2 a, 2b; By Fig. 2 a and can see that nickel covers the surface of microchannel uniformly; Fig. 2 b can see that nickel covers the inside of microchannel uniformly.
4) by step 3) sample of electroless deposition nickel carries out electrochemical deposition nickel dam to strengthen sample electric conductivity, and deposit fluid is the Ni (NO containing 0.05mol/L
3)
26H
2the mixed liquor of O and boric acid; At room temperature will adjust distance to electrode and sample electrode is 0.1cm, deposition current 10mA, and electrodeposition time is 300 seconds.The sample surface morphology obtained as shown in Figure 3 a, 3 b.Can be seen by Fig. 3 a, Fig. 3 b and again deposit layer of metal nickel by electro-deposition on the silicon micro-channel surface of uniform deposition nickel, this layer has compared with heavy thickness and higher electric conductivity, improves the actual use value of nanostructured microchannel.
5) silicon microchannel plate of Ni plated being put into vacuum drying chamber keeps temperature to be 90 DEG C, dries after two hours and takes out.
Embodiment 3:
1) configure electroless nickel plating solutions, solution composition comprises the NiCl of 1mol/L
26H
2the Na of O, 1mol/L
2hPO
47H
2the NH of O, 1.5mol/L
4cl.
2) by step 1) solution that configures instills the pH value that a certain amount of ammoniacal liquor regulates solution, makes its pH value be 8.
3) by step 2) electroplate liquid after adjustment pH value puts into water-bath and is heated to 70 DEG C, put into by silicon microchannel plate cleaned in 1 and keep 30 minutes.The sample surface morphology obtained is as Fig. 2 a, 2b; By Fig. 2 a and can see that nickel covers the surface of microchannel uniformly; Fig. 2 b can see that nickel covers the inside of microchannel uniformly.
4) by step 3) sample of electroless deposition nickel carries out electrochemical deposition nickel dam to strengthen sample electric conductivity, and deposit fluid is the Ni (NO containing 1mol/L
3)
26H
2the mixed liquor of O and boric acid; At room temperature will adjust distance to electrode and sample electrode is 1cm, deposition current 100mA, and electrodeposition time is 200 seconds.The sample surface morphology obtained as shown in Figure 3 a, 3 b.Can be seen by Fig. 3 a, Fig. 3 b and again deposit layer of metal nickel by electro-deposition on the silicon micro-channel surface of uniform deposition nickel, this layer has compared with heavy thickness and higher electric conductivity, improves the actual use value of nanostructured microchannel.
5) silicon microchannel plate of Ni plated being put into vacuum drying chamber keeps temperature to be 90 DEG C, dries after two hours and takes out.
3, hydrothermal deposition CoMoO
4:
Embodiment 4:
1) in order to the petal-like CoMoO of silicon microchannel plate surface deposition one deck nanometer at Ni plated
4, first configure the solution of hydro-thermal, solution is the (NH of 10mmol/L by component
4) 6Mo
7o
244H
2the CoCl of O and 10mmol/L
26H
2o forms.
2) sample and the solution that configures are put into reactor in the lump, and at 120 DEG C of temperature hydro-thermal 2.5 hours.The sample obtained after reaction is put into deionized water repeatedly clean, put into beaker and add the pink colour accessory substance that appropriate water ultrasonic vibration 20min removes surface.
3) sample handled well being put into vacuum drying chamber keeps temperature to be 90 DEG C, dries after two hours and takes out.
Embodiment 5:
1) in order to the petal-like CoMoO of silicon microchannel plate surface deposition one deck nanometer at Ni plated
4, first configure the solution of hydro-thermal, solution is the (NH of 100mmol/L by component
4) 6Mo
7o
244H
2the CoCl of O and 100mmol/L
26H
2o forms.
2) sample and the solution that configures are put into reactor in the lump, and at 120 DEG C of temperature hydro-thermal 0.5 hour.The sample obtained after reaction is put into deionized water repeatedly clean, put into beaker and add the pink colour accessory substance that appropriate water ultrasonic vibration 2min removes surface.
3) sample handled well being put into vacuum drying chamber keeps temperature to be 90 DEG C, dries after two hours and takes out.
Embodiment 6:
1) in order to the petal-like CoMoO of silicon microchannel plate surface deposition one deck nanometer at Ni plated
4, first configure the solution of hydro-thermal, solution is the (NH of 60mmol/L by component
4) 6Mo
7o
244H
2the CoCl of O and 60mmol/L
26H
2o forms.
2) sample and the solution that configures are put into reactor in the lump, and at 180 DEG C of temperature hydro-thermal 1.5 hours.The sample obtained after reaction is put into deionized water repeatedly clean, put into beaker and add the pink colour accessory substance that appropriate water ultrasonic vibration 10min removes surface.
3) sample handled well being put into vacuum drying chamber keeps temperature to be 90 DEG C, dries after two hours and takes out.
The sample surface morphology that embodiment 4-6 obtains as shown in Fig. 4 a, Fig. 4 b, by Fig. 4 a, Fig. 4 b can see by hydro-thermal method on nickel plating silicon micro-channel surface all and deposited one deck CoMoO
4nanostructured, can find out that this layer of nanostructured drastically increases the specific area of silicon micro-channel.
Sample inside microchannels as shown in Fig. 5 a, 5b, by Fig. 5 a and Fig. 5 b can see by hydro-thermal method nickel plating silicon micro-channel inwall also all and deposited one deck CoMoO
4nanostructured, can find out that the structure of this similar nano-pillar is distributed in the inside of microchannel widely, contribute to the raising of nano-device performance.The sign of sample as shown in Figure 6.
Electro-chemical activity is tested:
By the sample for preparing in 2M KOH solution through row electro-chemical test, content measurement comprises cyclic voltammetry curve and discharge and recharge.As can be seen from Fig. 7 a and Fig. 7 b, the area of the cyclic voltammetric parcel of sample is large, even if under high sweep speed 120mV/s, also can see obvious redox peak.Can be found out by charging and discharging curve, sample high rate during charging-discharging is good, at 2mA/cm
2electric current under capacity can reach 5.08F/cm
2.Can prove that the sample prepared has good electro-chemical activity and surface topography, have certain application prospect at new energy field and sensor field.
Claims (4)
1., based on the method that p-type silicon micro-channel surface uniform is nano-modified, it is characterized in that: the steps include:
(1) chemical nickel plating: ready-made silicon micro-channel version is cut into required size, shape by the mode of laser cutting; By the silicon micro-channel physics of well cutting and chemical method cleaning, put into the nickel plating solution configured, under the water bath of 90 DEG C, carry out electrochemistry nickel plating;
(2) electrochemistry nickel plating: in order to improve the thickness of surperficial nickel dam, improves the electric conductivity of sample, needs the electrochemical method of the sample surfaces after chemical nickel plating to deposit the nickel dam of one deck 100nm thickness;
(3) growth of nanostructures: the silicon micro-channel processed is put into the reaction solution configured and use Hydrothermal Growth petal-shaped material, the ambient deposition CoMoO of this HTHP
4nanostructured shows good uniformity and uniformity.
2. a kind of method nano-modified based on p-type silicon micro-channel surface uniform according to claim 1, is characterized in that: in step (1), and described chemical sinking effusion is the NiCl containing 0.1 ~ 2mol/L
26H
2the Na of O, 0.1 ~ 2mol/L
2hPO
47H
2the NH of O, 0.1 ~ 2mol/L
4cl, and use ammoniacal liquor to regulate solution ph to 6 ~ 9.Through the row chemical nickel plating of 1 ~ 40 minute under 40 ~ 90 DEG C of water bath.
3. a kind of method nano-modified based on p-type silicon micro-channel surface uniform according to claim 1, is characterized in that: in step (2), and described electrochemical deposition liquid is the Ni (NO containing 0.05 ~ 2mol/L
3)
26H
2the mixed liquor of O and boric acid; At room temperature will adjust distance to electrode and sample electrode is 0.1 ~ 2cm, and deposition current 10 ~ 200mA, electrodeposition time is 50 ~ 300 seconds.
4. a kind of method nano-modified based on p-type silicon micro-channel surface uniform according to claim 1, it is characterized in that: in step (3), described hydro-thermal reaction solution is the (NH of 10 ~ 100mmol/L
4) 6Mo
7o
244H
2the CoCl of O and 10 ~ 100mmol/L
26H
2the mixed liquor of O, and by hydro-thermal method hydro-thermal 0.5 ~ 2.5 hour at 120 ~ 220 DEG C of temperature.The density of control surface nano material is carried out by the length and temperature controlling the described hydro-thermal time.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105502283A (en) * | 2015-12-07 | 2016-04-20 | 华东师范大学 | Method for depositing three-dimensional nano-film structure on side wall of microchannel plate by hydrothermal method |
| CN108411286A (en) * | 2018-01-31 | 2018-08-17 | 华东师范大学 | The manufacturing method of arbitrary configuration three-dimensional conductive metal micro-nanostructure |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009208A (en) * | 2014-05-29 | 2014-08-27 | 中国科学院过程工程研究所 | Method for synthesizing nanometer Ni2O3/Co3O4 cathode material on copper sheet current collector through two-step method |
-
2015
- 2015-03-20 CN CN201510122203.2A patent/CN104828774B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009208A (en) * | 2014-05-29 | 2014-08-27 | 中国科学院过程工程研究所 | Method for synthesizing nanometer Ni2O3/Co3O4 cathode material on copper sheet current collector through two-step method |
Non-Patent Citations (3)
| Title |
|---|
| MAI LI ET AL.: "Electrochemically-deposited nanostructured Co(OH)2 flakes on three-dimensional ordered nickel/silicon microchannel plates for miniature supercapacitors", 《JOURNAL OF MATERIALS CHEMISTRY A》 * |
| MAI LI ET AL.: "Three-dimensional nanoscale Co3O4 electrode on ordered Ni/Si microchannel plates for electrochemical supercapacitors", 《MATERIALS LETTERS》 * |
| 刘涛等: "覆镍硅微通道板用于三维超级电容器的研究", 《华东师范大学学报（自然科学版）》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105502283A (en) * | 2015-12-07 | 2016-04-20 | 华东师范大学 | Method for depositing three-dimensional nano-film structure on side wall of microchannel plate by hydrothermal method |
| CN108411286A (en) * | 2018-01-31 | 2018-08-17 | 华东师范大学 | The manufacturing method of arbitrary configuration three-dimensional conductive metal micro-nanostructure |
| CN108411286B (en) * | 2018-01-31 | 2023-11-24 | 华东师范大学 | Manufacturing method of three-dimensional conductive metal micro-nano structure with arbitrary configuration |
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Address after: 200062 Putuo District, Zhongshan North Road, No. 3663, Co-patentee after: Shanghai Putai technology venture Limited by Share Ltd Patentee after: East China Normal University Address before: 200062 Putuo District, Zhongshan North Road, No. 3663, Co-patentee before: Shanghai Optech Technology Carve Out Co., Ltd. Patentee before: East China Normal University |