CN104822502B - Device for the temperature through heat cure period analog composite material structure - Google Patents
Device for the temperature through heat cure period analog composite material structure Download PDFInfo
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- CN104822502B CN104822502B CN201380061320.1A CN201380061320A CN104822502B CN 104822502 B CN104822502 B CN 104822502B CN 201380061320 A CN201380061320 A CN 201380061320A CN 104822502 B CN104822502 B CN 104822502B
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- wafer module
- stacked wafer
- otch
- temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
- B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
- B29C35/0288—Controlling heating or curing of polymers during moulding, e.g. by measuring temperatures or properties of the polymer and regulating the process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49004—Electrical device making including measuring or testing of device or component part
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
- Y10T29/49366—Sheet joined to sheet
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Oral & Maxillofacial Surgery (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
- Fire-Detection Mechanisms (AREA)
Abstract
Temperature simulator (10) may include stacked wafer module (12), the stacked wafer module (12) has the end plate being placed at the highest and lowest position of stacked wafer module (12) to (14), the end plate is arranged in the multiple heat sinks (16) between (14), each heat sink (16) is with multiple radiating otch, separate adjacent pairs of multiple backing plates (18) of end plate (14) and heat sink (16), each backing plate (18) is with pad otch (36), the open cavity (40) formed by multiple adjacent heat radiation otch and pad otch (36), the insulator (42) being arranged in chamber (40), and at least one temperature sensor (20) of at least one coupled to multiple heat sink (16).
Description
Background technology
Autoclave process produces still most important for composite structure.One main target of the process is to pass through
Cause and maintain the specified chemical reaction relevant with final resin system solidified, be fully cured pre-preg thermosetting polymer base
Body.The solidification of composite material component generally needs monitoring component temperature accurate through solidification process.Manufacturer's general execution one is big
The pre-manufactured test of series changes the change over time and sends out when a temperature increases to summarize the complexity of viscoelastic property
Raw, ramp rate (ramp rate) is reduced to, keeping temperature and stop are soaked the duration.
In autoclave, when the time for reaching some regulations and temperature objectives, it is assumed that part reaches and is fully cured.Cause
This, it is necessary to safety margin is built in time and temperature computation to ensure to be fully cured, and must be very strictly controlled the process.Often
Rule autoclave control system hardware is connected to equipment and is operated by technical staff, and technical staff must pass through each cure cycle
Monitoring data reads.
Generally use and be placed in part or the various temperature sensors of surrounding and feedback-type algorithm determine temperature survey
And control.For the temperature through the close tracking component of the process, temperature sensor such as thermocouple can be placed in
Some positions of the associated tool or fixing equipment being close to the part are pruned in area or be can be placed in the superfluous area of part
Put.
It is multiple unfavorable all to exist in both the method for temperature sensor and position.Any one method needs to calculate heat song
Line, for representational position on identification component, which includes important repetition test, and may result in defect and the event of part
Barrier.Heating curve is used for characterizing part temperatures and mating those temperature at the position of nature simulation part temperatures, and does not disturb
The process produces defect in part.Unit failure can be caused by the failure of the position for recognizing appropriate tracking component temperature.
Further, temperature sensor is accurately placed in precalculated position and checks that each part for making is a time and labor
The process of power dense.Additionally, pruning the part installation for positioning in area that temperature sensor needs just be cured for each in part
Sensor, its can be introduced a defect in part.
Content of the invention
In one embodiment, disclosed temperature simulator may include stacked wafer module with multiple heat-conducting plates, arrangement
Thermal insulation layer between the phase adjacency pair of multiple heat-conducting plates and at least one temperature sensor coupled to stacked wafer module.
In another embodiment, disclosed temperature simulator may include stacked wafer module, and which has and is placed in the stacked
A pair of end plate at the position of component highest and lowest, the multiple heat sinks being arranged between this pair of end plate, each heat sink have
Multiple radiating otch, separate adjacent pairs of multiple backing plates of end plate and heat sink, and each backing plate has pad otch, by multiple phases
The open cavity that adjacent radiating otch and pad otch are formed, the insulator being arranged in the chamber, and coupled to multiple heat sinks
At least one at least one temperature sensor.
In another embodiment again, the method that discloses the thermal inertia gradient of analog composite material components, the party
Method may include the following steps:(1) a pair of end plate is provided, each has multiple heat sinks of multiple radiating otch and each has
Multiple backing plates of pad otch, (2) stacked assemble the plurality of heat sink, at least one separation heat sink of plurality of backing plate
Phase adjacency pair so that multiple adjacent heat radiation otch and pad otch form chamber, and (3) assemble this pair of end plate to form stacked wafer module, (4)
Apply insulator in chamber, (5) produce the thermal model of stacked wafer module, and (6) recognize the heating curve of the stacked wafer module.
In terms of detailed description below, accompanying drawing and appended claim, other of disclosed temperature simulator
Will be apparent from.
Brief description
Fig. 1 is the front perspective view of an embodiment of disclosed temperature simulator;
Fig. 2 is the top view of the end plate of disclosed temperature simulator;
Fig. 3 is the top view of the heat sink of disclosed temperature simulator;
Fig. 4 is the top view of the backing plate of disclosed temperature simulator;
Fig. 5 is the sectional view of temperature simulator disclosed in Fig. 1;And
Fig. 6 is the flow process of an embodiment of the open method of the thermal inertia gradient for describing analog composite material components
Figure.
Specific embodiment
Accompanying drawing with reference to the specific embodiment for illustrating the disclosure described in detail below.With different structure and operation
Other embodiment is without departing from the scope of the present disclosure.Similar reference number may refer to identical element or structure in different accompanying drawings
Part.
Disclosed temperature simulator is generally designated as 10, can be passive device (that is, without electronics or move portion
Part), its simulation comes the temperature of self-curing material heat release behavior and the composite portion solidified in autoclave or baking oven
The thermograde of part.Through the disclosure, temperature simulator 10 may be commonly referred to as simulator, simulator apparatus or device.
Generally, one or more simulators 10 can be placed, and the corresponding of (for example, solidifying) being processed is close to in autoclave
Part.Simulator 10 can be with part directly contact.Can use from simulator 10 for the control system of autoclave
Output through regulation heat cycle regulating member temperature.
With reference to Fig. 1, simulator 10 may include the stacked wafer module 12 with a series of stacking plates 14,16,18.Each plate 14,
16th, 18 can be by Heat Conduction Material such as metal (for example, steel) or the nonmetallic making of heat conduction.Simulator 10 may include shape
Become at least two end plates 14 of the highest and lowest layer of stacked wafer module 12.Simulator 10 can be additionally included in 14 He of the top plate
The multiple heat sinks 16 being layered between bottom plate 14.The phase adjacency pair of plate 14,16 can be spaced apart preset distance and is located at which
Between backing plate 18 separate.As will be described in more detail herein, backing plate 18 can be used as end plate 14 and heat sink 16 phase adjacency pair it
Between thermal insulation layer.
For example, as shown in fig. 1, the top plate 14 can be spaced apart with adjacent heat sink 16 by backing plate 18.Heat sink
16 each phase adjacency pair also can be spaced apart by backing plate 18.Bottom plate 14 can also pass through between backing plate 18 and adjacent heat sink 16
Separate.The thickness of backing plate 18 can change to provide the heating curve needed for simulator 10.For example, with 0.010 inch, 0.060
The backing plate 18 of inch and 0.0125 inch thickness can be used for the required interval of the plate 14,16 for realizing adjacent.Can be using thermal model simultaneously
Plate 14,16 is spaced apart preset distance calibrated analog device 10 by using backing plate 18.
Simulator 10 may include the multiple temperature sensors 20 coupled to one or more heat sinks 16.In order to through solidification
The temperature curve of process compatible part, temperature sensor 20 can lag behind the predetermined amount of air themperature in autoclave.Temperature
Sensor 20 can be thermocouple, thermistor or other suitable temperature sensors.Thermal model can be used for calibrated analog device
10 required or selected lag time amount or temperature.Simulator 10 can be accommodated or replicate multiple temperature paths so as to simulate
Most hot (that is, advanced (leading)) the temperature path and most cold (that is, delayed) temperature path two of part or multiple parts
Person.This can allow the relatively quick any thermal characteristics for calibrating the autoclave and mould for using in the curing process.
With reference to Fig. 2, each end plate 14 can be formed (for example, cutting) by plate such as steel plate.End plate 14 concrete
Size can change according to the type of required actual temp curve and the composite material laminated board being just cured or flaggy.?
In Example embodiments, end plate 14 can be 15.24 centimetres (6.0 inches) with 0.3175 centimetre of (0.125 inch) thickness
Square plate.It will be appreciated by persons skilled in the art that the overall dimension of end plate 14 can change and be not intended to appoint
Where formula is limited.Each end plate 14 may also comprise multiple fastener holes 22.In embodiment illustrated, end plate 14 may include positioning
Four fastener holes 22 of areas adjacent in every nook and cranny.
With reference to Fig. 3, each heat sink 16 can be formed (for example, cutting) by plate such as steel plate.Heat sink 16
Concrete size can become according to the type of required actual temp curve and the composite material laminated board being just cured or flaggy
Change.For example, in plan view, heat sink 16 can be square, rectangle, circular or oval, and can have substantially equal
Even tranverse sectional thickness.In Example embodiments, heat sink 16 can be with 0.3175 centimetre of (0.125 inch) thickness
The square plate of 15.24 centimetres (6.0 inches), which can mate the size of end plate 14.It will be appreciated by those skilled in the art that
It is that the overall dimension of heat sink 16 can change and be not intended to limit by any way.Each heat sink 16 may also comprise many
Individual fastener hole 24.In embodiment illustrated, heat sink 16 may include to be positioned at four fastenings of every nook and cranny areas adjacent
Hole 24.
Each heat sink 16 may also comprise arrange through which multiple otch 26A1,26A2,26A3,26B1,26B2,
26B3.Otch 26A1,26A2,26A3,26B1,26B2,26B3 can reduce the heat transfer in the heat sink 16.For example, such as following
Discussed in detail, otch 26A1,26A2,26A3,26B1,26B2,26B3 can be filled with insulator 42 (Fig. 5).
For example otch 26A1,26A2,26A3,26B1,26B2,26B3 can be formed using jet cutter.Graphic
In embodiment, heat sink 16 may include external undercut 26A1,26A2,26A3 of three generally arcuates and three generally arcuates
Internal incision 26B1,26B2,26B3.One external undercut 26A1 may include about 90 degree of radian and two external undercuts
26A2,26A3 may include about 135 degree of radian.Each internal incision 26B1,26B2,26B3 may include about 120 degree of arc
Degree.The core 28 of heat sink 16 can be solid, and may remain in the approximate straight of 8.89 centimetres (3.5 inches)
In internal incision 26B1,26B2 and 26B3 in footpath.
The end of each external undercut 26A1,26A2,26A3 is adjacent with adjacent external undercut 26A1,26A2,26A3's
End can be by a part for heat sink 16 for example by between about 0.254 centimetre of (0.1 inch) part of heat sink 16
Separate.The medial surface of each external undercut 26A1,26A2,26A3 and the adjacent outer of adjacent inner otch 26B1,26B2,26B3
Face for example can be spaced by about 0.254 centimetre (0.1 inch) part of heat sink 16 by a part for heat sink 16
Open.The Adjacent circumferential edge of the lateral surface of each external undercut 26A1,26A2,26A3 and heat sink 16 for example can be radiated
About 0.254 centimetre of (0.1 inch) part spaced apart of plate 16.Each internal incision 26B1,26B2, the end of 26B3 with
The abutting end of adjacent inner otch 26B1,26B2,26B3 can be by a part for heat sink 16 for example by the big of heat sink 16
About 0.254 centimetre of (0.1 inch) part spaced apart.It will be appreciated by persons skilled in the art that otch 26A1,26A2,
The total number, shape, size of 26A3,26B1,26B2,26B3 and position can change and be not intended to limit by any way
System.
Heat sink 16 may also comprise path 30, and which is extended internally from neighboring 32, for inserting, or otherwise will
Temperature sensor 20 is coupled to heat sink 16.For example, temperature sensor 20 can be slidably insert into associated path 30.
In embodiment illustrated, path 30 extends to the center of the core 28 for being close to heat sink 16 and with about
The thickness of 0.1524 centimetre (0.06 inch).It will be appreciated by persons skilled in the art that the shape of path 30, size and position
(for example, can be according to the shape of temperature sensor 20 and construction change) can be changed and be not intended to limit by any way.
With reference to Fig. 4, each backing plate 18 can be formed (for example, cutting) by plate such as steel plate.The tool of backing plate 18
The size (discussed below) of body size (size of population and thickness) and center cut 36 can be according to required actual temp
The type of curve and the composite material laminated board being just cured or flaggy and change.In Example embodiments, backing plate 18 can
To be the square plate of 15.24 centimetres (6.0 inches), which can mate the external dimensions of end plate 14 and heat sink 18.Backing plate 18
Thickness can change according to the concrete thermal gradient run through needed for stacked wafer module 12.For example, stacked wafer module 12 may include have
0.0254 centimetre (0.010 inch), 0.1524 centimetre (0.060 inch) and 0.3175 centimetre of (0.125 inch) thickness multiple
Backing plate.Each backing plate 18 may also comprise multiple fastener holes 34.In embodiment illustrated, backing plate 18 may include to be positioned at each
Four fastener holes 34 near corner regions.
Each backing plate 18 may also comprise the center cut 36 that arranges through which.Center cut 36 for example can be cut using water spray
Cutting mill is formed.In embodiment illustrated, center cut 36 can be (5.25 inches) square openings.People in the art
Member is it is understood that the overall dimension of center cut 36 can change and be not intended to limit by any way.
With reference to Fig. 14, when plate 14,16,18 is configured to stacked wafer module 12 (Fig. 1), fastener hole 22,24,34 (Fig. 2 4) can
With alignment, and size can be suitably set multiple securing members 38 (Fig. 1) are received so as to lock stacked wafer module 12 securely
Tightly together.Fastener hole 22,24,34 may include smooth hole or the screwed hole formed through plate 14,16,18.Securing member 38 can
To be any suitable machanical fastener, for example, have the partly or completely axle of full thread those.Those skilled in the art are permissible
It is understood by, plate 14,16,18 can also be tightened together by additive method to form stacked wafer module 12, the additive method
Including chemical bonding, welding or the like.
With reference to Fig. 5, the stacked wafer module 12 of simulator 10 may include multiple phases that the heat sink 16 for stacking and backing plate 18 are combined
The open cavity 40 limited by adjacent otch 26A1,26A2,26A3,26B1,26B2,26B3,36.Can be (that is, in radiating in the chamber 40
In otch 26A1,26A2,26A3,26B1,26B2,26B3 and pad otch 36) insulator 42 is provided, heat-insulated so as to will be filled with
The backing plate 18 of body 42 is manufactured into thermal insulation layer 44.Insulator 42 can be any suitable heat-barrier material.In a concrete structure,
Insulator 42 can be the form of powder insulation body, due to the fluid properties of powder, its can be injected in stacked wafer module 12 with
Filling otch 26A1,26A2,26A3,26B1,26B2,26B3,36.The insulator 42 of powder can be by based on silica
The compressing granular structure of primary granule is formed.Used as specific, nonrestrictive example, insulator 42 can be silica gas
Gel powder.The insulator 42 being included in chamber 40 can allow simulator 10 produce within many autoclave cycles accurate and
Repeatable output result.
All sides of the plate 14,16,18 itself except side (that is, outer surface) outward can be heat-insulated with environment, so as to
Predictable mode controls the heat transfer by stacked wafer module 12.In fact, insulator 42 can be substantially surrounded by each heat sink
16 core 28, so as to limit the direction of heat transfer through stacked wafer module 12.Alternating series of heat sink 16 and thermal insulation layer
44 (that is, backing plate otch 36 is filled with the layer of the backing plate 18 of insulator 42) can produce staged pattern that is stable and well controlling
Thermograde, its can more accurately capture the shape of temperature hysteresis sensor curve than simple radiator.Change backing plate 18
Thickness can correspondingly change the thickness of thermal insulation layer 44 because backing plate otch 36 can accommodate different amounts of insulator 42.
Thus, the lead and lag temperature of the composite material component of simulation can be replicated by calibrated analog device 10.Simulator
10 by adding heat sink 16 and backing plate 18 to stacked wafer module 12 or can reduce heat sink 16 and backing plate 18 from stacked wafer module 12
Calibrated.For example, during first calibrates, temperature sensor 20 is coupled to each heat sink 16.After the calibration, exist
Ad-hoc location on stacked wafer module 12 is that specific heat sink 18 can be selected for coupling temperature sensor 20.?
After identification heating curve, it is possible to use heat modeling or other analyses determine the specific configuration of stacked wafer module 12, so as to simulator
10 independently of the specific heat monitoring simulation of part or can replicate the corresponding composite of heating through the heat cycle of solidification process
The thermal inertia gradient of laminate member.
With reference to Fig. 6, the method 100 of the thermal inertia gradient of analog composite material components is also disclosed.Method 100 can be
Start from the step of end plate, heat sink and backing plate are provided at square frame 102.At square frame 104, end plate, heat sink and backing plate are permissible
It is assembled into stacked wafer module.Stacked wafer module can limit one or more open cavities.At square frame 106, insulator can be incorporated into
Stacked wafer module is to fill (at least in part) open cavity.At square frame 108, the thermal model of stacked wafer module can be produced.In square frame
At 110, the heating curve of stacked wafer module can be recognized.
Thus, the heating curve of stacked wafer module can be compared with the heating curve of composite material component.User then can
To determine the construction of stacked wafer module, the stacked wafer module has the heating curve of close match composite material component heating curve.Based on really
Fixed construction, can add backing plate and/or heat sink to stacked wafer module or reduce backing plate and/or heat sink from stacked wafer module.
Temperature sensor can be thermally coupled at least one heat sink of stacked wafer module.For example, temperature sensor can be inserted
Enter in the path 30 in a heat sink.Then, stacked wafer module can be placed in autoclave, close to the heat with coupling
At least one composite material component of curve.Therefore, it can monitor the thermal inertia gradient of stacked wafer module (i.e., it is possible to execute monitoring
The step of thermal inertia gradient).Through heat cure period, the thermal inertia gradient in response to stacked wafer module can adjust the control of autoclave
Set up and put.
In another application, it is possible to use exothermal event simulated by disclosed simulator.
Following clause provides illustrative, the non exhaustive example of the theme according to the disclosure, the example may call for protection or
Failed call is protected:
A kind of temperature simulator of clause 1., which includes:
Stacked wafer module including multiple heat-conducting plates;
The thermal insulation layer being arranged between the phase adjacency pair of the plurality of heat-conducting plate;With
It is thermally coupled to the temperature sensor of the stacked wafer module.
Temperature simulator described in 2. clause 1 of clause, wherein the plurality of heat-conducting plate include:
It is placed at the uppermost position in fig-ure of the stacked wafer module and the end plate pair at place is put in lowermost position;With
The multiple heat sinks being arranged between the end plate pair.
Temperature simulator described in 3. clause 2 of clause, wherein described temperature sensor are thermally coupled to the plurality of heat sink
At least one.
Temperature simulator described in 4. clause 2 of clause, each of wherein the plurality of heat sink include to arrange through which
Multiple otch and core, wherein the plurality of otch are filled with insulator.
Temperature simulator described in 5. clause 4 of clause, wherein described temperature sensor are coupled to the core.
Temperature simulator described in 6. clause 4 of clause, wherein described insulator include powder.
Temperature simulator described in 7. clause 1-6 any one of clause, wherein described thermal insulation layer include at least one backing plate,
The backing plate includes the otch that arranges through which, and the otch is filled with insulator.
Temperature simulator described in 8. clause 7 of clause, wherein described backing plate separate the described adjacent of the plurality of heat-conducting plate
Right.
A kind of method of the thermal inertia gradient of analog composite material components of clause 9., methods described comprise the following steps:
There is provided end plate to, each include multiple radiating multiple heat sinks of otch and each include multiple pads of pad otch
Plate;
Stacked assembles the plurality of heat sink, and at least one of wherein the plurality of backing plate separates the phase adjacency pair of heat sink,
Chamber is formed so as to multiple adjacent heat radiation otch and pad otch;
The end plate is assembled to form stacked wafer module;
Apply insulator in the chamber;
Produce the thermal model of the stacked wafer module;With
Recognize the heating curve of the stacked wafer module.
Method described in 10. clause 9 of clause, further includes the following steps:
Recognize the heating curve of the composite material component;
The heating curve of the heating curve of the stacked wafer module with the composite material component is compared;
Determine the construction of the stacked wafer module, the heat that the stacked wafer module has the coupling composite material component is bent
The heating curve of line;
Based on the construction, add backing plate to the stacked wafer module or reduce backing plate from the stacked wafer module;And
Based on the construction, add heat sink to the stacked wafer module or reduce heat sink from the stacked wafer module.
Method described in 11. clause 10 of clause, further includes the following steps:
At least one temperature sensor is coupled at least one of the heat sink;
At least one composite material component placement of the heating curve being close in autoclave with coupling has at least one
The stacked wafer module of temperature sensor;With
Monitor the thermal inertia gradient of the stacked wafer module.
Method described in 12. clause 11 of clause, further includes through heat cure period in response to the stacked wafer module
The step of control of the thermal inertia gradient adjustment autoclave is arranged.
A kind of temperature simulator of clause 13., which includes:
Stacked wafer module, it include:
The end plate pair being placed at the highest and lowest position of the stacked wafer module;
The multiple heat sinks being arranged between the end plate pair, each described heat sink include multiple radiating otch;And
Adjacent pairs of multiple backing plates of the end plate and the heat sink are separated, each described backing plate includes pad otch,
Wherein described pad otch and the radiating otch limit open cavity;
The insulator being arranged in the open cavity;With
Coupled at least one of the plurality of heat sink temperature sensor.
Temperature simulator described in 14. clause 13 of clause, wherein the plurality of radiating otch are limited in the heat sink
Center portion is divided.
Temperature simulator described in 15. clause 14 of clause, wherein described temperature sensor are coupled to the core.
Temperature simulator described in 16. clause 15 of clause, each of wherein the plurality of heat sink are included from neighboring
The center of the core is extended close to receive the path of the temperature sensor.
Temperature simulator described in 17. clause 15-16 any one of clause, wherein the plurality of radiating otch include multiple
The external undercut of generally arcuate and the internal incision of the multiple generally arcuates being spaced apart with the external undercut.
Temperature simulator described in 18. clause 13-17 any one of clause, wherein described stacked wafer module is by multiple fastenings
Part is fixed together.
Temperature simulator described in 19. clause 13-18 any one of clause, wherein described temperature sensor include thermoelectricity
Even.
Temperature simulator described in 20. clause 13-19 any one of clause, wherein described insulator include powder insulation
Body.
Although the various aspects of disclosed temperature simulator are had been shown and described, after reading this specification, this
Skilled person is contemplated that change.The application includes this kind of change and is only limited by the scope of claims.
Claims (11)
1. a kind of temperature simulator (10), which includes:
Stacked wafer module (12) including multiple heat-conducting plates;The plurality of heat-conducting plate includes:
It is placed at the uppermost position in fig-ure of the stacked wafer module (12) and the end plate at place is put to (14) in lowermost position;With
The end plate is arranged in the multiple heat sinks (16) between (14);
The thermal insulation layer (44) being arranged between the phase adjacency pair of the plurality of heat-conducting plate;With
It is thermally coupled to the temperature sensor (20) of the stacked wafer module (12).
2. temperature simulator (10) described in claim 1, wherein described temperature sensor (20) be thermally coupled to the plurality of dissipate
At least one of hot plate (16).
3. temperature simulator (10) described in claim 1, wherein each the plurality of heat sink (16) are included through its cloth
The multiple otch that puts and core (28), wherein the plurality of otch (26A1,26A2,26A3,26B1,26B2,26B3)
It is filled with insulator (42).
4. temperature simulator (10) described in claim 3, wherein described temperature sensor (20) coupled to the core
(28).
5. claim 3 or the temperature simulator (10) described in 4 any one, wherein described insulator (42) include powder.
6. temperature simulator (10) described in any one of claim 1-4, wherein described thermal insulation layer (44) including at least one pad
Plate (18), backing plate (18) include the otch that arranges through which, and the otch is filled with insulator (42).
7. temperature simulator (10) described in claim 6, wherein the plurality of heat-conducting plate of described backing plate (18) separation is described
Phase adjacency pair.
8. a kind of method of the thermal inertia gradient of analog composite material components, methods described comprise the following steps:
There is provided end plate to (14), each include multiple radiating multiple heat sinks (16) of otch and each include pad otch (36)
Multiple backing plates (18);
Stacked assembles the plurality of heat sink (16), wherein the plurality of backing plate (18) at least one separation heat sink (16)
Phase adjacency pair, forms chamber (40) so as to multiple adjacent heat radiation otch and pad otch (36);
The end plate is assembled to (14) to form stacked wafer module (12);
Apply insulator (42) in the chamber (40);
Produce the thermal model of the stacked wafer module (12);With
Recognize the heating curve of the stacked wafer module (12).
9. the method described in claim 8, further includes the following steps:
Recognize the heating curve of the composite material component;
The heating curve of the heating curve of the stacked wafer module (12) with the composite material component is compared;
Determine the construction of the stacked wafer module (12), described stacked wafer module (12) have the described of the coupling composite material component
The heating curve of heating curve;
Based on the construction, add backing plate (18) to stacked wafer module (12) or reduce backing plate from the stacked wafer module (12)
(18);And
Based on the construction, add heat sink (16) to stacked wafer module (12) or reduce from the stacked wafer module (12) scattered
Hot plate (16).
10. the method described in claim 9, further includes the following steps:
Couple at least one of at least one temperature sensor (20) extremely heat sink (16);
At least one composite material component placement of the heating curve being close in autoclave with coupling has at least one temperature
The stacked wafer module (12) of sensor (20);With
Monitor the thermal inertia gradient of the stacked wafer module (12).
Method described in 11. claims 10, further includes through heat cure period in response to the stacked wafer module (12)
The step of control of the thermal inertia gradient adjustment autoclave is arranged.
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US13/684,694 | 2012-11-26 | ||
US13/684,694 US9068894B2 (en) | 2012-11-26 | 2012-11-26 | Device for emulating temperature of a composite structure through a thermal cure cycle |
PCT/US2013/063798 WO2014081510A1 (en) | 2012-11-26 | 2013-10-08 | Device for emulating temperature of a composite structure through a thermal cure cycle |
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KR (1) | KR101983879B1 (en) |
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CN104568718B (en) * | 2014-12-31 | 2017-07-07 | 浙江华电器材检测研究所 | Insulator temperature cycling test machine |
CA2979337C (en) * | 2015-03-10 | 2020-06-02 | Hubbell Incorporated | Temperature monitoring of high voltage distribution system components |
US10800072B2 (en) | 2017-04-24 | 2020-10-13 | The Boeing Company | Apparatus and method for emulating temperature during a thermal cure cycle |
CN113639898A (en) * | 2021-09-10 | 2021-11-12 | 上海烟草集团有限责任公司 | Simulated oral cavity temperature measuring device for measuring flue gas temperature |
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US3263485A (en) * | 1964-01-30 | 1966-08-02 | Minnesota Mining & Mfg | Apparatus for determining thermal conductivity |
US3531996A (en) * | 1968-10-23 | 1970-10-06 | Monsanto Co | Cure simulator |
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US4140050A (en) | 1977-10-27 | 1979-02-20 | Formica Corporation | Method and apparatus for controlling rate related manufacturing operations using a reaction simulation technique |
US4624582A (en) * | 1984-02-29 | 1986-11-25 | Banda Lionel A | Multi-wire mineral insulated cable thermocouple reference junction |
US5770155A (en) | 1995-11-21 | 1998-06-23 | United Technologies Corporation | Composite structure resin cure monitoring apparatus using an optical fiber grating sensor |
DE29621637U1 (en) * | 1996-12-13 | 1997-02-13 | Pause, Barbara, Dr., 04207 Leipzig | Device for measuring the heat transfer through a layer structure of plate-shaped material samples under different test conditions |
US6142662A (en) * | 1998-06-16 | 2000-11-07 | New Jersey Institute Of Technology | Apparatus and method for simultaneously determining thermal conductivity and thermal contact resistance |
CA2265014A1 (en) | 1999-03-05 | 2000-09-05 | Labplas Inc. | Device for blending contents of a bag |
US6490501B1 (en) | 1999-10-06 | 2002-12-03 | Bell Helicopter Textron Inc. | Cure monitoring and control system |
JP3858660B2 (en) * | 2001-10-10 | 2006-12-20 | 株式会社日立製作所 | Measuring method of thermal resistance of resin |
ES2335635B2 (en) * | 2008-02-04 | 2011-01-17 | Universidad Politecnica De Valencia | METHOD FOR NON-INVASIVE MONITORING OF THE CURING OF A THERMOSTABLE PLASTIC MATERIAL THROUGH THE USE OF MICROWAVES AND MICROWAVE DEVICE FOR THE APPLICATION OF SUCH METHOD. |
US8196452B2 (en) * | 2008-03-27 | 2012-06-12 | The Boeing Company | Collection of process data using in-situ sensors |
CN201583362U (en) * | 2010-02-04 | 2010-09-15 | 国家海洋技术中心 | High pressure resistant rapid response temperature sensor |
US9304048B2 (en) * | 2012-11-26 | 2016-04-05 | The Boeing Company | Device for emulating temperature of an exothermic composite structure through a thermal cure cycle |
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KR20150088999A (en) | 2015-08-04 |
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