CN104821343B - There is cadmium telluride diaphragm solar battery and the manufacture method thereof of quantum well structure - Google Patents
There is cadmium telluride diaphragm solar battery and the manufacture method thereof of quantum well structure Download PDFInfo
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- CN104821343B CN104821343B CN201510076551.0A CN201510076551A CN104821343B CN 104821343 B CN104821343 B CN 104821343B CN 201510076551 A CN201510076551 A CN 201510076551A CN 104821343 B CN104821343 B CN 104821343B
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 229910004613 CdTe Inorganic materials 0.000 claims abstract 12
- 239000000463 material Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005516 engineering process Methods 0.000 claims description 16
- 229910052753 mercury Inorganic materials 0.000 claims description 15
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 229910052717 sulfur Inorganic materials 0.000 claims description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 208000036626 Mental retardation Diseases 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 11
- 229910021641 deionized water Inorganic materials 0.000 claims description 11
- 238000002360 preparation method Methods 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 239000001307 helium Substances 0.000 claims description 8
- 229910052734 helium Inorganic materials 0.000 claims description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000004531 microgranule Substances 0.000 claims description 4
- -1 at CO Inorganic materials 0.000 claims description 3
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- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 5
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
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- 230000005693 optoelectronics Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
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- 239000010959 steel Substances 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- YKYOUMDCQGMQQO-UHFFFAOYSA-L Cadmium chloride Inorganic materials Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 1
- 229910018030 Cu2Te Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
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- 206010054949 Metaplasia Diseases 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- 229910006990 Si1-xGex Inorganic materials 0.000 description 1
- 229910007020 Si1−xGex Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 229910007667 ZnOx Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- RJCQBQGAPKAMLL-UHFFFAOYSA-N bromotrifluoromethane Chemical compound FC(F)(F)Br RJCQBQGAPKAMLL-UHFFFAOYSA-N 0.000 description 1
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- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of cadmium telluride diaphragm solar battery with quantum well structure and manufacture method thereof, this battery includes the pn-junction formed by CdTe absorbed layer and CdS Window layer, and the CdTe absorbed layer in the pn-junction structure of described cadmium telluride diaphragm solar battery includes the quantum well structure formed by multiple cycles.This SQW can separate and catch free electron, under the exciting of sunlight, forms larger current and improves the efficiency of thin-film solar cells.This quantum well structure avoids the abnormal growth of crystal grain and hole and the formation in crack, be prepared for densification, grain size uniformly, the high-quality thin film of energy gap coupling, meanwhile, quantum well structure is conducive to fully absorbing sunlight.Thus, further increase the efficiency of cadmium telluride diaphragm solar battery.
Description
Technical field
The present invention relates to solaode and have quantum well structure thin-film solar cells and
Its manufacture method, particularly have quantum well structure cadmium telluride diaphragm solar battery structure and
Its manufacture method.
Background technology
Since French scientist AE.Becquerel 1839 find opto-electronic conversion phenomenon with
After, within 1883, first solaode with semiconductor selenium as substrate is born.Nineteen forty-six
Russell obtains the patent (US.2,402,662) of first solaode, its photoelectricity
Conversion efficiency is only 1%.Until 1954, the research of AT&T Labs is just found that doping
Silica-base material has high photoelectric transformation efficiency.This research is established for modern sun energy battery industry
Determine basis.In 1958, Haffman Utilities Electric Co. of the U.S. was that the satellite of the U.S. is loaded onto
First piece of solar panel, its photoelectric transformation efficiency is about 6%.From this, monocrystal silicon and many
The solaode research of crystalline silicon substrate and production have had quick development, solar energy in 2006
The yield of battery has reached 2000 megawatts, the photoelectric transformation efficiency of monocrystaline silicon solar cell
Reaching 24.7%, commercial product reaches 22.7%, the opto-electronic conversion effect of polysilicon solar cell
Rate reaches 20.3%, and commercial product reaches 15.3%.
On the other hand, the Zhores Alferov of the Soviet Union in 1970 have developed first GaAs base
High efficiency III-V race's solaode.Owing to preparing the key technology of III-V race's thin-film material
MOCVD (metal organic chemical vapor deposition) is until about 1980 are just successfully researched and developed, beautiful
The applied solar energy Battery Company of state was successfully applied to this technology and prepares photoelectricity and turn in 1988
Change III-V race's solaode of the GaAs base that efficiency is 17%.Thereafter, with GaAs base
The doping techniques of III-V race's material of sheet, the technology of preparing of plural serial stage solaode obtains
Research and development widely, its photoelectric transformation efficiency reached 19% in 1993,2000
Reach 24%, within 2002, reach 26%, within 2005, reach 28%, within 2007, reach 30%.2007
Year, big III-V solaode company of race Emcore and SpectroLab of the U.S. two produces
High efficiency III-V race solar energy commercial product, its photoelectric conversion rate reaches 38%, this two company
Occupy the 95% of III-V race's solaode market, the whole world, nearest American National Energy Research Institute
Announce, they successfully have developed its photoelectric transformation efficiency be up to 50% plural serial stage III-
V race's solaode.Owing to the substrate of this kind of solaode is expensive, equipment and process costs
Height, is mainly used in the fields such as Aeronautics and Astronautics, national defence and military project.
External solaode research and production, substantially can be divided into three phases, i.e. have three
For solaode.
First generation solaode, with the silica-based single constituent element of monocrystal silicon and polycrystalline the most too
Sun can battery be representative.Only pay attention to improve photoelectric transformation efficiency and large-scale production, also exist
The problems such as high energy consumption, labour intensive, and high cost unfriendly to environment, it produces the valency of electricity
Lattice are about 2～3 times of coal electricity；Until 2014, the yield of first generation solaode is still
Account for the 80-90% of global solar battery total amount.
Second filial generation solaode is thin-film solar cells, is grew up in recent years new
Technology, it pays attention to reduce the energy consumption in production process and process costs, and brainstrust is called green
Color photovoltaic industry.Compared with monocrystal silicon and polysilicon solar cell, the use of its thin film HIGH-PURITY SILICON
Amount is its 1%, meanwhile, low temperature (about about 200 DEG C) plasma enhanced chemical gas
Depositing deposition technique, electroplating technology mutually, printing technology is extensively studied and is applied to thin film too
The production of sun energy battery.Owing to using the glass of low cost, rustless steel thin slice, macromolecule substrate
As baseplate material and low temperature process, greatly reduce production cost, and be conducive to large-scale
Produce.The material of the thin-film solar cells that success is researched and developed the most is: CdTe, its photoelectricity turns
Changing efficiency is 16.5%, and commercial product is about about 12%；CulnGaSe (CIGS), its light
Photoelectric transformation efficiency is 19.5%, and commercial product is about 12%；Non-crystalline silicon and microcrystal silicon, its light
Photoelectric transformation efficiency is 8.3～15%, and commercial product is 7～12%, in recent years, due to liquid crystal electricity
Depending on the research and development of thin film transistor (TFT), non-crystalline silicon and microcrystalline silicon film technology had significant progress,
And it has been applied to silicon-based film solar cells.Focus around thin-film solar cells research
It is that exploitation is efficient, low cost, long-life photovoltaic solar cell.They should have as follows
Feature: low cost, high efficiency, long-life, material source are abundant, nontoxic, scientists ratio
Relatively have an optimistic view of amorphous silicon thin-film solar cell.Account for the thin-film solar cells of lion's share at present
Being non-crystal silicon solar cell, usually pin structure battery, Window layer is that the p-type of boron-doping is non-
Crystal silicon, then one layer of unadulterated i layer of deposition, the N-type non-crystalline silicon of redeposited one layer of p-doped,
And plated electrode.Brainstrust is it is expected that owing to thin-film solar cells has low cost, high effect
Rate, the ability of large-scale production, at following 10～15 years, thin-film solar cells will become
Main product for global solar battery.
Amorphous silicon battery typically uses PECVD (Plasma Enhanced Chemical Vapor
Deposition plasma enhanced chemical vapor deposition) method makes the gases such as high purity silane
Decompose deposition.This kind of processing technology, can be aborning continuously in multiple vacuum moulding machines
Room completes, to realize producing in enormous quantities.Owing to deposition decomposition temperature is low, can be at glass, stainless
Thin film is deposited, it is easy to large area metaplasia is produced, and cost is relatively on steel plate, ceramic wafer, flexible plastic sheet
Low.The structure of the non-crystalline silicon based solar battery prepared on a glass substrate is:
Glass/TCO/p-a-SiC/i-a-Si/n-a-Si/TCO, at the bottom of stainless steel lining, preparation is non-
The structure of crystal silicon based solar battery is: SS/ZnO/n-a-Si/i-a-Si/p-na-Si/ITO.
Internationally recognized amorphous silicon/microcrystalline silicon tandem solaode is next of silicon-base thin-film battery
Generation technique, is the important technology approach realizing high efficiency, low cost thin-film solar cells, is thin film
The industrialization direction that battery is new.Microcrystalline silicon film is since nineteen sixty-eight is by Veprek and Maracek
Having used hydrogen PCVD since 600 DEG C are prepared first, people start it
Potential premium properties has had Preliminary study, until 1979, Usui and Kikuchi of Japan
Strengthen chemical gaseous phase by the process and low-temperature plasma using high hydrogen silicon ratio to deposit
Technology, prepares doped microcrystalline silicon, and people are the most gradually to microcrystalline silicon materials and in solar-electricity
Application in pond is studied.1994, SwitzerlandM.J.Williams and
M.Faraji team proposes with microcrystal silicon for end battery first, and non-crystalline silicon is the lamination electricity of top battery
The concept in pond, this battery combines non-crystalline silicon good characteristic and the long-wave response of microcrystal silicon and steady
Qualitative good advantage.Mitsubishi heavy industrys in 2005 and the non-crystalline silicon/crystallite of Zhong Yuan chemical company
Silicon laminated cell assembly sample efficiencies respectively reach 11.1% (40cm × 50cm) and
13.5% (91cm × 45cm).Japanese Sharp company in JIUYUE, 2007 realizes non-crystalline silicon/microcrystal silicon and folds
Layer solar cell industrialization produces (25MW, efficiency 8%-8.5%), Oerlikon (Europe, Europe
Rui Kang) company's in JIUYUE, 2009 announces its amorphous/the highest turn of crystallite lamination solar cell laboratory
Change efficiency reach 11.9%, at 2010 6 in the solaode exhibition " PVJapan of Yokohama opening
2010 ", on, Applied Materials (AMAT) announce the conversion efficiency of 0.1m × 0.1m module
Having reached 10.1%, the conversion efficiency of 1.3m × 1.1m module has reached 9.9%.Improve battery
The maximally effective approach of efficiency is to try to improve the efficiency of light absorption of battery.For silica-base film,
Using low bandgap material is inevitable approach.The low bandgap material used such as Uni-Solar company is
A-SiGe (amorphous silicon germanium) alloy, their a-Si/a-SiGe/a-SiGe three-knot laminated battery is little
Area cells (0.25cm2) efficiency reaches 15.2%, stabilization efficiency reaches 13%, 900cm2Assembly is imitated
Rate reaches 11.4%, and stabilization efficiency reaches 10.2%, and product efficiency reaches 7%-8%.
For thin-film solar cells, a unijunction, there is no the silion cell of optically focused, reason
In opinion, maximum electricity conversion is 31% (Shockley Queisser restriction).According to band gap
What energy reduced order, the silion cell not having optically focused of binode, in theory maximum photoelectric conversion
Efficiency rises to 41%, and three knots can reach 49%.Therefore, development multi-knot thin film is too
Sun energy battery is an up the important channel of solar battery efficiency.For cadmium telluride diaphragm solar
Battery, the fusing point of the high or low band gap material matched with cadmium telluride is the lowest, and unstable, difficult
To form the efficient series-connected solar cells of many knots.For CIGS thin film solaode, with
The high or low band gap material that CIGS matches is difficult to prepare, and is not easy to form the efficiently series connection of many knots
Solaode.Band gap for silicon-based film solar cells, crystalline silicon and non-crystalline silicon is
1.1eV's and 1.7eV, and the big I of the band gap of nano-silicon foundation crystallite dimension is at 1.1eV
And change between 1.7eV.Si based compound, such as crystal Si1-xGex band gap (0≤X≤1)
0.7eV can be changed to from 1.1eV according to the concentration of Ge, and amorphous SiGe can be 1.4, amorphous
SiC about 1.95eV, the spectrum that this combination is exactly with the sun matches.
On the other hand, absorb luminous energy the most fully, improve the photoelectric conversion of solaode
Efficiency, allows electronic energy as much as possible be optically excited and to be changed into electric energy, so, and battery material
Level-density parameter and few defect be of crucial importance.For technological layer, thin film deposition
Technological difficulties ensure high-quality and the uniformity of thin film while being to realize high speed deposition, because
The base material of thin film crystallite dimension, Growing Process of Crystal Particles and growth is all to the quality of thin film and all
Even property has strong impact, thus affects the performance of whole battery performance.In thin film grain growth
Cheng Zhong, due to the abnormal growth of crystal grain, causes grain size uneven, easily formed hole and
Crack.The hole being full of in thin film and crack add the compound of carrier, and cause leakage
Electric current, seriously reduces Voc and FF value.Therefore, solve this technical barrier, be to prepare
The important channel of efficient thin-film solar cell.
We are in patent ZL200910043930-4, ZL200910043931-9 and
From technical elements in ZL200910226603-2, manufacture high efficiency a-Si/ μ C-Si,
With a-Si/nC-Si/ μ C-Si binode and three knot silicon-based film solar cells, high density (HD)
Develop and be used for high-quality with hyperfrequency (VHF)-PECVD technique, large scale
A-Si, a-SiGe, nC-Si, μ C-Si, A-SiC thin film deposition.Using a-SiC as Window layer,
And p-type doping Si-rich silicon oxide film is between top a-Si and bottom μ c-Si battery
Between reflecting layer be used for increasing a-Si/ μ C-Si binode and a-Si/nC-Si/ μ C-Si tri-ties silica-based
The efficiency of thin-film solar cells.The CVD process optimization of high-quality B doping ZnOx,
Improve its mist degree and electrical conductivity, and have studied other light capture technique.Three knot silica-base films
The laboratory sample efficiency of solaode can reach 15%, has stabilization efficiency more than 10%
Solar module is for business-like a-Si/ μ C-Si (1.1 meters of x1.3 rice) more than and
Preparation.
The application in patent ZL200910043930-4, ZL200910043931-9 and
Research is continued, it is desirable to provide one has SQW knot on the basis of ZL200910226603-2
The cadmium telluride diaphragm solar battery of structure and manufacture method thereof.
Cadmium telluride (CdTe) thin-film solar cells is a kind of with p-type CdTe with N-shaped CdS
Thin-film solar cells based on hetero-junctions.In recent years, CdTe thin film solaode with
Its optoelectronic transformation efficiency is high, production cost is low, high stability, absorbing light spectrum width, life cycle knot
The advantage such as recyclable after bundle, extremely China and foreign countries are paid close attention to.
CdTe thin film solaode be sequentially depositing on glass or other flexible substrate many
Layer film and the photovoltaic device that constitutes.The CdTe thin film solaode of general standard is by five layers
Structure forms, and as shown in Figure 1, wherein the direction of arrow is direction of illumination.
(English name is the transparent conductive oxide that ground floor is deposited in transparent substrates
Transparent andConductive Oxide, is called for short TCO) layer, act primarily as printing opacity and lead
The effect of electricity；The second layer is CdS Window layer, and this layer is n-type semiconductor；Third layer is CdTe
Absorbed layer, for p-type semiconductor, the N-shaped CdS of this layer and Window layer forms p-n junction, and the 4th
Layer is at CdTe absorbed layer back contacts (English name is back contact) deposited above
Layer, the effect of this layer is to reduce CdTe and the contact berrier of metal electrode, make metal electrode with
CdTe forms Ohmic contact；Finally be deposited on back contact is back electrode (English name
For back electrode) layer, this layer is metal material layer, with tco layer by external circuit even
Connect, for electric current is drawn.There is the CdTe thin film solaode of said structure in work
Time, penetrate transparent substrates when there being light to wear and tco layer is irradiated to p-n junction, and photon energy is more than p
During type CdTe energy gap, the electrons gain energy in absorbed layer valence band transits to conduction band, with
Time in valence band, produce hole, electron-hole pair can be produced near p-n junction, generation non-
The built in field effect that equilbrium carrier is formed due to n-type semiconductor to p-type semiconductor is to sky
Between charged region two ends drift thus produce photovoltaic electric potential.When p-n junction is turned on external circuit, electricity
Road there will be electric current.
Summary of the invention
The technical problem to be solved in the present invention is, for prior art exist thin-film material with too
The problem of the defect that sun can produce in spectrum energy gap coupling, grain formation and growth course, and
How to fully absorb sunlight and improve electricity conversion, proposing the tellurium with quantum well structure
Cadmium thin-film solar cells and manufacture method thereof.
For achieving the above object, the technical scheme is that
A kind of cadmium telluride diaphragm solar battery with quantum well structure, inhales including by CdTe
The pn-junction that receipts layer and CdS Window layer are formed；The pn of described cadmium telluride diaphragm solar battery
CdTe absorbed layer in structure includes the SQW knot formed by multiple cycles, one of them
Cycle includes the two-layer up and down that crystal structure is identical and energy gap is different, and upper strata is high energy gap layer, under
Layer is mental retardation gap layer；Described high energy gap layer is energy gap doping between 1.4-1.6eV or non-
The Cd of dopingxTeyLayer, described mental retardation gap layer be energy gap doping between 1.3-1.5eV or
The Cd of undopedxTeyLayer, wherein 0≤x≤1, y=2-x.
Described high energy gap layer can be Cd miscellaneous for CuxTeyLayer, 0≤x≤1, y=2-x, Cu
Doping be 0.1% to 25%.Described doping is atomic ratio.
Described mental retardation gap layer can be the Cd of dopingxTeyLayer, doped chemical is Cu, Zn, Hg
With one or more in S, wherein 0≤x≤1, y=2-x, the doping of miscellaneous element is
0.1% to 25%.
The barrier height of described quantum well structure is poor by the energy gap of composition quantum well structure material
Regulating, energy gap difference is preferably 0.1 0.5eV.
The barrier width of described quantum well structure by the thickness of high energy gap layer and mental retardation gap layer is
Regulation, the thickness of described high energy gap layer is preferably 1-10nm, and the thickness of described mental retardation gap layer is
Preferably 10 100nm.
Described CdTe absorbed layer preferably includes the quantum well structure formed by 5 20 cycles.
The preparation method of the described cadmium telluride diaphragm solar battery with quantum well structure, described
The CdTe absorbed layer with quantum well structure uses co-evaporation method to prepare, and concrete technology controls ginseng
Number includes: controls the pressure that vacuum is 0.01-0.03 Torr of reative cell, then passes to helium
Gas, when helium reaches the pressure of 10-20 Torr, starts plated film, substrate temperature is raised to 600
650 DEG C, CdTe and Zn, Hg and the miscellaneous CdTe graphite boat source temperature of S are
650-750 DEG C, Cu raw graphite boat source temperature 1100-1400 DEG C prepares cadmium telluride amount
Sub-well structure；Often plated a tunic, with the nitrogen being dried remove loose attachment oxide or
CdTe microgranule.
After completing CdTe quantum well structure deposition, it is preferred to use Caddy (Cleary) makes annealing treatment,
Before annealing processes, CdTe quantum well structure is placed in the 60%-of a saturated Caddy (Cleary)
80% methanol solution；The substrate of CdTe quantum well structure is soaked 15 points at 50 DEG C-70 DEG C
Zhong Hou, takes out with the N being dried2Dry up.Put in oven 100sccm helium stream and
The O of 25sccm2Toast 40-45 minute under air-flow and at a temperature of 360 DEG C-450 DEG C. cooling
After 45 DEG C-50 DEG C, remove the cadmium of excess with deionized water rinsing.
Below the present invention it is further explained and illustrates:
The described cadmium telluride diaphragm solar battery with quantum well structure includes unijunction or ties more
Cadmium telluride diaphragm solar battery.
For cadmium telluride diaphragm solar battery, its quantum well structure is by following match materials
Combination is formed: CdxTey(1.4-1.6eV) Cd that/Cu, Zn, Hg and S is miscellaneousxTey(1.3
-1.5eV) (1 >=x >=0,1 >=y >=0) by change Cu, Zn, Hg and S miscellaneous amount (
Miscellaneous amount is from 0 to 25%), the ratio of x and y and grain size regulate cadmium telluride material
Energy gap coupling.For Cu adulterates, when Cu doping increases to 25% from 0, telluride
The crystal structure of cadmium is become the hexagonal structure of Cu2Te form from CdTe form hexagonal structure, its
Optical band gap is increased to 1.62 electron-volts by 1.48 electron-volts.For S adulterates,
Work as CdTe1-xSxMolecular formula in, when the doping of S increases to 25% from 0, its optical band gap
It is reduced to 1.41 electron-volts by 1.51 electron-volts.It addition, experiment proves Zn, Hg,
The doping of the elements such as Mg, Se can cause the change of CdTe optical band gap (or energy gap).
Many knots of the present invention have in the thin-film solar cells of quantum well structure, utilize wide gap material
The quantum well structure of material does top electricity knot, and the luminous energy of short wavelength is converted into electric energy；Utilize narrow strip
The quantum well structure of material does end electricity knot, speciality wavelength luminous energy can be converted into electric energy.Due to more
Taking full advantage of the spectral domain of sunlight, the thin-film solar cells that many knots have quantum well structure has
Higher photoelectric transformation efficiency.
Compared with prior art, present invention have an advantage that
Quantum well structure of the present invention can separate and catch free electron, swashing at sunlight
Give, form larger current and improve the efficiency of thin-film solar cells.The potential barrier of SQW is high
Degree can be regulated by the energy gap of its material that matches.The barrier width of SQW can pass through its phase
The thickness of matching materials regulates.Described quantum well structure avoids abnormal growth and the hole of crystal grain
Hole and the formation in crack, be prepared for densification, and grain size is uniform, the height of energy gap coupling
The thin film of quality, meanwhile, quantum well structure is conducive to fully absorbing sunlight.Thus,
Further increase the efficiency of thin-film solar cells.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing CdTe thin film solaode.
Fig. 2 is the cadmium telluride diaphragm solar battery structural representation with quantum well structure；
Fig. 3 is that the cupra cadmium telluride diaphragm solar battery structure with quantum well structure is shown
It is intended to；
Fig. 4 is the cadmium telluride diaphragm solar battery structural representation with three knot quantum well structures
Figure；
Fig. 5 is the cadmium telluride diaphragm solar battery structural representation with binode quantum well structure
Figure；
Fig. 6 is the cadmium telluride diaphragm solar battery preparation technology flow process with quantum well structure
Figure.
Detailed description of the invention
Below in conjunction with embodiment, the present invention is described further.
As shown in Figures 2 and 3, a kind of cadmium telluride diaphragm solar with quantum well structure
Battery, according to incident illumination direction, includes electrode, CdS window before glass substrate, TCO successively
Layer, CdTe absorbed layer, back contact, metal back electrode, back reflection encapsulating material and the back of the body
Glass sheet, wherein CdTe absorbed layer (p layer) and CdS Window layer (i layer) form pn-junction.
CdTe absorbed layer in the pn-junction structure of described cadmium telluride diaphragm solar battery include by
The quantum well structure that multiple cycles are formed, one of them cycle includes that crystal structure is identical and energy
The two-layer up and down that gap is different, upper strata is high energy gap layer, and lower floor is mental retardation gap layer；Its SQW is tied
Structure is formed by the combination of following match materials: the Cd that Cu is miscellaneousxTey(1.4-1.6eV)/Cu,Zn,
The Cd that Hg and S is miscellaneousxTey(1.3-1.5eV) (0≤x≤1, y=2-x), by changing Cu,
The miscellaneous amount of Zn, Hg and S (miscellaneous amount from 0 to 25%), the ratio of x and y and crystal grain
Size regulates the energy gap coupling of cadmium telluride material.And the order preparation fallen progressively as energy level is many
Knot has the thin-film solar cells of quantum well structure.The thickness of usual high gap material is 1-
10nm, the thickness of low band gap material is 10 100nm, and the structural cycle of SQW is 5-20.
As shown in Figure 6, there is described in the cadmium telluride diaphragm solar battery of quantum well structure
Manufacture method includes:
(1) glass substrate is carried out；Glass substrate is first with the deionized water containing 1% soap
(DI) solution carries out processing 5 20 minutes at 60-80 DEG C, then uses ultrasound wave and 60-
The deionized water of 80 DEG C is carried out further, and dries.
(2) on substrate, electrode before TCO is prepared；
Nesa coating SnO2: F layer is by low-pressure chemical vapor phase deposition (LPCVD)
Prepared by method, deposition gross pressure is at 60torr, and underlayer temperature is 550 DEG C.Tetramethyl
Stannum (TMT) is as the presoma of stannum, and CBrF3 is the doped source as F.i-SnO2
The thickness of thin layer of layer is 0.5-2 μm, and resistivity is about 1 ohmcm.As used ITO to make
For electrode before TCO, use ITO to be target and be prepared by magnetically controlled sputter method.
(3) use 355nm long wavelength laser that electrode segmentation before TCO is formed the electrode of sub-battery；
(4) glass substrate after scribing is carried out again；
(5) on the glass substrate with conducting film, CdS film is prepared with chemical solution reaction method；
The raw material of cadmium uses 0.02-0.05 molar concentration cadmium acetate (CdAc2), 0.5-2
Ammonium acetate (the NH of molar concentration4Ac), the ammonia (NH of 10-20 molar concentration4OH)
Thiourea (CS (NH with 0.05 0.1 molar concentration3)2) as sulfur source.Chemical solution is anti-
The method depositing temperature of answering is 80-95 DEG C, and CdS film deposit thickness is 80 200 nanometers.Plating mould
After completing, then substrate takes out from bath, puts into warm deionized water, and uses supersound process
(about 2 minutes), to remove the CdS microgranule of loose attachment, then use the N being dried2Dry up.
(6) preparation of cadmium telluride quantum well structure:
Cadmium telluride quantum well structure uses co-evaporation method to prepare, and prepares front concentrated hydrochloric acid and removes base
Back CdS layer, deionized water (the 1:40 hydrochloric acid: deionization in dilute hydrochloric acid solution
Water) 5 seconds, then clean with deionized water and be dried.After substrate is loaded in settling chamber, at 400 DEG C
With under the atmosphere of CO and CO2 or H2, pretreatment 15 minutes.Time after cooling to 200 DEG C,
The vacuum of reative cell is extracted into the pressure of 0.02 Torr, then passes to helium, reaches 10-20 Torr
Pressure time, start to plate buffer layer thin film, then substrate temperature is raised to as 600-650 DEG C,
The CdTe graphite boat source temperature that CdTe and Zn, Hg and S are miscellaneous is 650-750 DEG C, Cu
Raw graphite 1100-1400 DEG C of preparation of boat source temperature carrys out cadmium telluride quantum well structure.
The cadmium telluride raw material of evaporation source is according to the miscellaneous Cd of Cu in cadmium telluride quantum well structurexTey
(1.4-1.6eV) Cd that/Cu, Zn, Hg and S is miscellaneousxTey(1.3-1.5eV)(1≥x≥0,1≥y≥0)
By changing the miscellaneous amount (miscellaneous amount from 0 to 25%) of Cu, Zn, Hg and S, and to x
It is adjusted with the ratio of y, and adjusts grain size and regulate to 6 μm from 0.5 μm
The energy gap coupling of cadmium telluride material, by adjustment substrate temperature from 500 to 650 DEG C, Cu, Zn,
CdTe graphite boat source temperature miscellaneous for Hg and S is from 600 to 750 DEG C, and deposition speed
Rate controls CdTe grain size and reaches the adjustment of CdTe energy gap.Often plate a tunic,
Oxide or the CdTe microgranule of any loose attachment is removed with dry nitrogen.
(7)CdCl2Annealing
After completing CdTe quantum well structure deposition, Caddy (Cleary) is used to make annealing treatment.Not yet
There is the photoelectric conversion typically only 6% and 10% of the cadmium telluride solaode of annealed process
Between, and the optoelectronic transformation efficiency after Caddy (Cleary) makes annealing treatment can reach 12%-15%.
Before annealing processes, CdTe quantum well structure is placed in the 75% of a saturated Caddy (Cleary)
Methanol solution (saturated solution: 500 ml methanol contain 7.5 grams of Caddy (Clearyies).CdTe quantum
After the substrate of well structure is soaked 15 minutes at 50-70 DEG C, take out the N2 with being dried and blow
Dry.Put into helium stream and the O of 25sccm at 100sccm in oven2With 360 DEG C under air-flow
Toast 40 minutes at a temperature of-450 DEG C.After being cooled to 50 DEG C, go with deionized water rinsing
Cadmium except any excess.
(8 use machinery and laser technology scribing film plating layer, it is simple to metal back electrode connects as wire
Sub-battery；
(9) back-contact electrode is prepared
Employing 88:1:35 phosphoric acid: nitric acid: CdTe SQW is tied by the solution of deionized water
The substrate of structure is carried out and etches, and is about the 30-60 second total time of etching, forms one
The surface of the rich Te of cleaning.
4 grams of HgTe:Cu (Cu of the atomic ratio of about 2%) are doped in 10g graphite powder row
Become graphite paste as back electrode raw material.Back electrode is prepared, in baking by the method for mould printing
In stove in the helium stream of 100sccm, at 250 350 DEG C, 30 minutes, then template print
The method preparation of brush stamps the silver slurry of thin layer, and toasts 12 in 100 DEG C of baking boxs
Hour.Also employing is had to use magnetron sputtering to prepare metal back electrode；
(10) use machinery and laser technology scribing Cadimium telluride thin film and metal back electrode, formed single
Sub-battery；
(11) battery edge is carried out laser scribing；
(12) battery is carried out circuit connection and encapsulation.
Claims (8)
1. a cadmium telluride diaphragm solar battery with quantum well structure, including the pn-junction formed by CdTe absorbed layer and CdS Window layer, it is characterized in that, CdTe absorbed layer in the pn-junction of described cadmium telluride diaphragm solar battery includes the quantum well structure formed by multiple cycles, one of them cycle includes the two-layer up and down that crystal structure is identical and energy gap is different, upper strata is high energy gap layer, and lower floor is mental retardation gap layer；Described high energy gap layer is the Cd of energy gap Cu doping between 1.4-1.6eVxTeyLayer, described mental retardation gap layer is the energy gap Cd adulterated by Cu, Zn, Hg, and S between 1.3-1.5eVxTeyLayer, wherein 0≤x≤1, y=2-x；By changing Cu, Zn, Hg, and S doping, the ratio of x and y, grain size regulates the level-density parameter of cadmium telluride material.
The most according to claim 1, have the cadmium telluride diaphragm solar battery of quantum well structure, it is characterized in that, described high energy gap layer is Cd miscellaneous for CuxTeyLayer, the doping of Cu is 0.1% to 25%, and described doping is atomic ratio.
The most according to claim 1, have the cadmium telluride diaphragm solar battery of quantum well structure, it is characterized in that, described mental retardation gap layer is the Cd of dopingxTeyLayer, doped chemical is one or more in Cu, Zn, Hg and S, and the doping of miscellaneous element is 0.1% to 25%, and described doping is atomic ratio.
The cadmium telluride diaphragm solar battery with quantum well structure the most according to claim 1 or claim 2, is characterized in that, the barrier height of described quantum well structure is regulated by the energy gap difference of composition quantum well structure material, and energy gap difference is 0.1 0.5 eV.
The cadmium telluride diaphragm solar battery with quantum well structure the most according to claim 1 or claim 2, it is characterized in that, the barrier width of described quantum well structure is regulation by the thickness of high energy gap layer and mental retardation gap layer, the thickness of described high energy gap layer is 1-10 nm, and the thickness of described mental retardation gap layer is 10 100 nm.
The most according to claim 1, have the cadmium telluride diaphragm solar battery of quantum well structure, it is characterized in that, described CdTe absorbed layer includes the quantum well structure formed by 5 20 cycles.
7. the method preparing the cadmium telluride diaphragm solar battery as described in arbitrary in claim 1-6 with quantum well structure, it is characterized in that, the described CdTe absorbed layer with quantum well structure uses co-evaporation method to prepare, concrete technology controls parameter and includes: remove the CdS layer of substrate back before preparation with concentrated hydrochloric acid, the deionized water 3-5 second in dilute hydrochloric acid solution, then clean with deionized water and be dried；After substrate is loaded in settling chamber, at a temperature of 380 DEG C-420 DEG C, at CO, CO2Or H2Atmosphere under, pretreatment 15-20 minute；When being cooled to 150 DEG C-200 DEG C, the vacuum of reative cell is extracted into the pressure of 0.01-0.03 Torr, then pass to helium, when reaching the pressure of 10-20 Torrs, start to plate buffer layer thin film, then substrate temperature is raised to be 600 DEG C-650 DEG C, CdTe and Zn, CdTe graphite boat source temperature miscellaneous for Hg and S is 650 DEG C-750 DEG C, Cu 1100 DEG C of-1400 DEG C of preparations of raw graphite boat source temperature carry out cadmium telluride quantum well structure, often plate a tunic, remove oxide or the CdTe microgranule of loose attachment with the nitrogen being dried.
8. the method preparing the cadmium telluride diaphragm solar battery with quantum well structure as claimed in claim 7, it is characterized in that, after completing CdTe quantum well structure deposition, Caddy (Cleary) is used to make annealing treatment: CdTe quantum well structure is placed in 60%-80% methanol solution of a saturated Caddy (Cleary)；After the substrate of CdTe quantum well structure is soaked 15 minutes at 50 DEG C-70 DEG C, take out with the N being dried2Dry up, put into helium stream and the O of 25 sccm at 100 sccm in oven2Toast 40-45 minute under air-flow and at a temperature of 360 DEG C-450 DEG C. after being cooled to 45 DEG C-50 DEG C, remove the cadmium of excess with deionized water rinsing.
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