CN104809983A - Pixel unit driving circuit, pixel unit driving method and pixel unit - Google Patents
Pixel unit driving circuit, pixel unit driving method and pixel unit Download PDFInfo
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- CN104809983A CN104809983A CN201510229135.XA CN201510229135A CN104809983A CN 104809983 A CN104809983 A CN 104809983A CN 201510229135 A CN201510229135 A CN 201510229135A CN 104809983 A CN104809983 A CN 104809983A
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Abstract
The invention provides a pixel unit driving circuit which is used for driving an organic light-emitting device and comprises a first thin film transistor, a second thin film transistor, a third thin film transistor and a storage capacitor. The first thin film transistor is used for being turned on or off under the control of a first scanning signal and charging the storage capacitor via a data signal when turned on, the second thin film transistor is used for being turned on under the effect of the storage capacitor and driving an organic light-emitting diode to emit light, and the third thin film transistor is used for being turned on under the control of a second scanning signal when the first thin film transistor is turned off and charging the storage capacitor via a charge signal. The pixel unit driving circuit has the advantage that splash screens due to charge leakage of the storage capacitor can be effectively prevented. The invention further provides a pixel unit and a pixel unit driving method.
Description
Technical field
The present invention relates to technical field of liquid crystal display, particularly relate to a kind of pixel unit drive circuit, a kind of driving method and a kind of pixel cell.
Background technology
Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) display screen, also referred to as organic EL display panel, is a kind of emerging flat-panel display device.OLED display screen has the features such as preparation technology is simple, cost is low, low in energy consumption, luminosity is high, operating temperature range is wide, volume is frivolous, fast response time, and be easy to realize colored display, large screen display, Flexible Displays and match with driver ic, be thus widely used in flat display field.
Pixel cell in OLED display screen generally arranges in a matrix fashion, and OLED is according to the difference of type of drive, passive matrix OLED (Passive-Matrix OLED can be divided into, PM-OLED) display screen and Activematric OLED (Active-Matrix OLED, AM-OLED) is driven to drive display screen two kinds.Wherein, although PM-OLED drives display screen technique simple, cost is lower, because there is the shortcomings such as cross-talk, high power consumption, low life-span, cannot meet the needs of high resolving power, large scale display.By contrast, AM-OLED drives display screen in each pixel cell, to be integrated with one group by thin film transistor (TFT) (Thin FilmTransistor, TFT) and memory capacitance composition pixel unit drive circuit, by to the conducting of TFT or the control of cut-off, can realize the control to the electric current by OLED, thus it is luminous to control this OLED.Because driving circuit adds TFT and memory capacitance, make the OLED in each pixel cell can both be luminous in a controlled frame time, and required drive current be little, low in energy consumption, life-span is longer, can meet the needs of high resolving power, many gray scales, large scale display.
Figure 1 shows that a pixel unit drive circuit in prior art in OLED display screen.Wherein, T1 is switching thin-film transistor, and T2 is for driving thin film transistor (TFT), C
sfor memory capacitance, sweep trace is used for providing sweep signal, and data line is used for providing data-signal.When the sweep signal that sweep trace provides is in high level, the grid g1 of switching thin-film transistor T1 is applied in certain voltage, and then make switching thin-film transistor T1 enter conducting state, pressure reduction between the source electrode s1 of switching thin-film transistor T1 and drain electrode d1 drops to a small value, and now switching thin-film transistor T1 is approximate can regard short-circuit condition as.The data-signal that data line provides is stored into memory capacitance C by switching thin-film transistor T1
son, be memory capacitance C
scharging.Thin film transistor (TFT) T2 is connected to this memory capacitance C
sone end, as this memory capacitance C
swhen the voltage of one end reaches the cut-in voltage driving thin film transistor (TFT) T2, drive thin film transistor (TFT) T2 conducting, and driving OLED is luminous.When the sweep signal that sweep trace provides is in low level, then switching thin-film transistor T1 is in cut-off state, but, because switching thin-film transistor T1 exists leakage current, then memory capacitance C
son electric charge can leak to described data line when switching thin-film transistor T1 is in cut-off state along switching thin-film transistor T1, cause memory capacitance C
svoltage declines gradually, namely there is leaping voltage (as Fig. 2), thus the voltage of the grid g2 of described driving thin film transistor (TFT) T2 is significantly declined when described switching thin-film transistor T1 is in cut-off state, and then causes OLED display screen to glimmer.
Summary of the invention
The invention provides a kind of pixel unit drive circuit, by increasing by a charging signals, and for charging to memory capacitance between the switching thin-film transistor off period, causing to prevent from causing memory capacitance voltage instability because of charge leakage dodging screen.
Separately, the present invention also provides a kind of pixel cell of this pixel unit drive circuit of application, described charging signals is provided by increasing by a charging wire, and for charging to memory capacitance between the switching thin-film transistor off period, cause to prevent from causing memory capacitance voltage instability because of charge leakage dodging screen, promote the stability of pixel cell.
Separately, the present invention also provides a kind of pixel cell driving method of this pixel unit drive circuit of application, by providing described charging signals, and for charging to memory capacitance between the switching thin-film transistor off period, cause to prevent from causing memory capacitance voltage instability because of charge leakage dodging screen, promote display quality.
A kind of pixel unit drive circuit, for driving organic electroluminescence device, described pixel unit drive circuit comprises the first film transistor, second thin film transistor (TFT), 3rd thin film transistor (TFT) and memory capacitance, described the first film transistor is used for conducting or cut-off under the control of one first sweep signal, and give the charging of described memory capacitance when conducting by a data-signal, described second thin film transistor (TFT) is used for conducting under the effect of described memory capacitance and drives an Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) luminous, described 3rd thin film transistor (TFT) is used for when described the first film transistor cutoff, conducting under the control of one second sweep signal, and give the charging of described memory capacitance by a charging signals.
Wherein, described the first film transistor comprises first grid, first source electrode and the first drain electrode, described second thin film transistor (TFT) comprises second grid, second source electrode and the second drain electrode, described 3rd thin film transistor (TFT) comprises the 3rd grid, 3rd source electrode and the 3rd drain electrode, described first grid is for receiving described first sweep signal, described first source electrode is for receiving described data-signal, described first drain electrode and described second grid, one end of described 3rd drain electrode and described memory capacitance connects, the other end and described second of described memory capacitance drains and is connected, described second source electrode is connected with one end of described OLED, the other end ground connection of described OLED, described 3rd drain electrode is connected with one end of described second grid and described memory capacitance, described 3rd grid is for receiving described second sweep signal, described 3rd source electrode is for receiving described charging signals.
Wherein, described pixel unit drive circuit also comprises a power supply, and described power supply and described second drains and is connected, for providing driving voltage for described pixel unit drive circuit.
A kind of pixel cell, comprise the first sweep trace, the second sweep trace, data line, charging wire and described pixel unit drive circuit, described first sweep trace is used for providing the first sweep signal, described second sweep trace is used for providing the second sweep signal, described data line is used for providing data-signal, described charging wire is used for providing charging signals, described second sweep signal had for one first time delay relative to described first sweep signal, and described charging signals had for one second time delay relative to described data-signal.
Wherein, described first sweep signal and described data-signal synchronizing signal each other, described second sweep signal and described charging signals synchronizing signal each other, and the cycle of described first sweep signal, the second sweep signal, data-signal and charging signals be a frame period of described pixel cell.
Wherein, described first time delay equals described second time delay, and is all less than or equal to described first time delay and the second time delay 3/4 frame period of described pixel cell.
A kind of pixel cell driving method, comprising:
First sweep signal, the second sweep signal, data-signal and charging signals are provided;
The conducting under the effect of described first sweep signal of the first film transistor, is charged to memory capacitance by described the first film transistor to make described data-signal;
When the voltage that described memory capacitance is connected to second grid one end of the second thin film transistor (TFT) reaches the cut-in voltage of described second thin film transistor (TFT), described second thin film transistor (TFT) conducting, to drive an Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) luminous;
Described the first film transistor ends under the effect of described first sweep signal, and described memory capacitance continues to maintain described second thin film transistor (TFT) conducting, to drive described OLED luminous;
When after described the first film transistor cutoff one schedule time, the conducting under the effect of described second sweep signal of the 3rd thin film transistor (TFT), and described charging signals is charged to described memory capacitance by described 3rd thin film transistor (TFT).
Wherein, described first sweep signal and described data-signal synchronizing signal each other, described second sweep signal and described charging signals synchronizing signal each other, described second sweep signal had for one first time delay relative to described first sweep signal, described charging signals had for one second time delay relative to described data-signal, and the cycle of described first sweep signal, the second sweep signal, data-signal and charging signals is a frame period of described pixel cell.
Wherein, described first time delay equals described second time delay, and is all less than or equal to described first time delay and the second time delay 3/4 frame period of described pixel cell.
Wherein, the described schedule time equals described first time delay or the second time delay.
Pixel unit drive circuit of the present invention, the charging signals in 3/4 frame period is delayed relative to data-signal by providing one, and provide second sweep signal in 3/4 frame period relative to described first scanning signal delay controlling described 3rd thin film transistor (TFT) conducting or cut-off, with when described the first film transistor cutoff, described 3rd thin film transistor (TFT) conducting is controlled by described second sweep signal, thus make described charging signals be the charging of described memory capacitance by described 3rd thin film transistor (TFT), during preventing described the first film transistor cutoff, cause because charge leakage makes described memory capacitance voltage instability dodging screen.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a pixel unit drive circuit schematic diagram of OLED display screen in prior art.
Fig. 2 is the voltage jump schematic diagram of memory capacitance within a frame period of pixel unit drive circuit shown in Fig. 1.
Fig. 3 is the pixel unit drive circuit structural representation of first embodiment of the invention.
Fig. 4 is the first sweep signal of pixel unit drive circuit shown in Fig. 3 and the relation schematic diagram of the second sweep signal.
Fig. 5 is the data-signal of pixel unit drive circuit shown in Fig. 3 and the relation schematic diagram of charging signals.
Fig. 6 is the structural representation of the pixel cell of second embodiment of the invention.
Fig. 7 is the schematic flow sheet of the pixel cell driving method of third embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 3, first embodiment of the invention provides a kind of pixel unit drive circuit 30, and for driving organic electroluminescence device, it comprises power supply V
dD, the first film transistor (Thin Film Transistor, TFT) T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3 and memory capacitance C
s.Described the first film transistor T1 is switching TFT, at one first sweep signal V
s1control under conducting or cut-off, and when conducting by a data-signal V
datato described memory capacitance C
scharging.Described second thin film transistor (TFT) T2 is drive TFT, at described memory capacitance C
seffect under conducting drive an Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) luminous.Described 3rd thin film transistor (TFT) T3 is used at one second sweep signal V
s2control under conducting or cut-off, and when conducting by a charging signals V
cto described memory capacitance C
scharging.Described power vd D is used for providing driving voltage for this pixel unit drive circuit 30.
Described the first film transistor T1 comprises first grid g1, the first source electrode s1 and the first drain electrode d1.Described second thin film transistor (TFT) T2 comprises second grid g2, the second source electrode s2 and the second drain electrode d2.Described 3rd thin film transistor (TFT) T3 comprises the 3rd grid g3, the 3rd source electrode s3 and the 3rd drain electrode d3.Described first grid g1 is for receiving described first sweep signal V
s1.Described first source electrode s1 is for receiving described data-signal V
data.Described first drain electrode d1 and described second grid g2, the 3rd drains d3 and described memory capacitance C
sone end connect, described memory capacitance C
sthe other end and described power supply V
dDand described second drain electrode d2 connects, that is, this memory capacitance C
sbe connected to described second grid g2 and second to drain between d2.Described second source electrode s2 is connected with one end of described OLED, the other end ground connection of described OLED.Described 3rd drain electrode d3 and described second grid g2 and described memory capacitance C
sone end connect, described 3rd grid g3 is for receiving described second sweep signal V
s2.Described 3rd source electrode s3 is for receiving described charging signals V
c.
Refer to Fig. 4, described first sweep signal V
s1with described second sweep signal V
s2for having the periodic signal of same waveform, and described second sweep signal V
s2relative to described first sweep signal V
s1there is one first time delay.In the present embodiment, described first sweep signal V
s1with the second sweep signal V
s2cycle be a frame period, and there is identical peak value V
1, described first time delay was 3/4 frame period.Be appreciated that described first time delay can also be less than for 3/4 frame period, e.g., 2/3 frame period, 3/5 frame period, 1/2 frame period etc.
Refer to Fig. 5, described data-signal V
datawith described charging signals V
cfor having the periodic signal of same waveform, and described charging signals V
crelative to described data-signal V
datathere is one second time delay.In the present embodiment, described data-signal V
datawith charging signals V
ccycle be a frame period, and there is identical peak value V
2, described second time delay was 3/4 frame period.Be appreciated that described second time delay can also be less than for 3/4 frame period, e.g., 2/3 frame period, 3/5 frame period, 1/2 frame period etc.
In the present embodiment, described first sweep signal V
s1with described data-signal V
datasynchronizing signal each other, described second sweep signal V
s2with described charging signals V
csynchronizing signal each other.That is, equal described second time delay, and the two all can be set to be less than or equal to 3/4 frame period described first time delay.
Further illustrate the principle of work of described pixel unit drive circuit 30 below in conjunction with Fig. 3 to Fig. 5, this sentences described first time delay was 3/4 frame period, and the second time delay was 3/4 frame period is that example is illustrated.
As described first sweep signal V
s1during for high level, described the first film transistor T1 is at the first sweep signal V
s1effect under conducting, described data-signal V
databy described the first film transistor T1 to described memory capacitance C
scharge.Described 3rd thin film transistor (TFT) T3 is at described second sweep signal V
s2effect under end.As described memory capacitance C
swhen the voltage being connected to described second grid g2 one end reaches the cut-in voltage of described second thin film transistor (TFT) T2, then this second thin film transistor (TFT) T2 conducting, and then drive described OLED luminous.
As described first sweep signal V
s1during for low level, described the first film transistor T1 is at described first sweep signal V
s1effect under end.Described second thin film transistor (TFT) T2 is at memory capacitance C
seffect under conducting, and then drive described OLED luminous.Because described the first film transistor T1 exists leakage current, described memory capacitance C
son electric charge can at the first sweep signal V
s1for leaking to described data line along the first film transistor T1 between low period, cause described memory capacitance C
svoltage decline gradually.For preventing because of described memory capacitance C
svoltage drop excessive and cause OLED to glimmer, after described the first film transistor T1 ends a schedule time, described 3rd thin film transistor (TFT) T3 is at described second sweep signal V
s2effect under conducting, make described charging signals V
cby described 3rd thin film transistor (TFT) T3 to described memory capacitance C
scharge, thus ensure described memory capacitance C
senough voltage can be provided to drive described OLED luminous continually and steadily, and last till described first sweep signal V
s1become high level, and then repeat said process.Wherein, the described schedule time is less than or equal to 3/4 frame period of pixel cell.
Described pixel unit drive circuit 30 is by providing one relative to data-signal V
databe delayed the charging signals V in 3/4 frame period
c, and provide one relative to described first sweep signal V
s1be delayed the second sweep signal V in 3/4 frame period
s2control described 3rd thin film transistor (TFT) T3 conducting or cut-off, with at described first sweep signal V
s1during for low level, by described second sweep signal V
s2control described 3rd thin film transistor (TFT) T3 conducting, thus make described charging signals V
cbe described memory capacitance C by described 3rd thin film transistor (TFT) T3
scharging, when being in cut-off state to prevent described the first film transistor T1, because charge leakage makes described memory capacitance C
svoltage instability and cause dodge screen.
Refer to Fig. 6, second embodiment of the invention provides a kind of pixel cell 60 applying above-mentioned pixel unit drive circuit 30.Described pixel cell 60 comprises the first sweep trace 61, second sweep trace 63, data line 65, charging wire 67, power supply V
dD, the first film transistor (Thin Film Transistor, TFT) T1, the second thin film transistor (TFT) T2, the 3rd thin film transistor (TFT) T3, memory capacitance C
sand Organic Light Emitting Diode (OrganicLight-Emitting Diode, OLED).Described first sweep trace 61 is for providing the first sweep signal V
s1.Described second sweep trace 63 is for providing the second sweep signal V
s2.Described data line 65 is for providing data-signal V
data.Described charging wire 67 is for providing charging signals V
c.Described power supply V
dDfor providing driving voltage for this pixel cell 60.Described the first film transistor T1 is switching TFT, and it is connected with the first sweep trace 61 and data line 65, at described first sweep signal V
s1control under conducting or cut-off, and make described data-signal V when conducting
datadescribed memory capacitance C is given by this first film transistor T1
scharging.Described second thin film transistor (TFT) T2 is drive TFT, itself and described the first film transistor T1, power supply V
dDand memory capacitance C
sconnect, at described memory capacitance C
seffect under conducting drive described OLED luminous.Described 3rd thin film transistor (TFT) T3 is connected with described the first film transistor T1, the second thin film transistor (TFT) T2, charging wire 67 and described second sweep trace 63, at described second sweep signal V
s2control under conducting or cut-off, and make described charging signals V when conducting
cdescribed memory capacitance C is given by the 3rd thin film transistor (TFT) T3
scharging.
Described the first film transistor T1 comprises first grid g1, the first source electrode s1 and the first drain electrode d1.Described second thin film transistor (TFT) T2 comprises second grid g2, the second source electrode s2 and the second drain electrode d2.Described 3rd thin film transistor (TFT) T3 comprises the 3rd grid g3, the 3rd source electrode s3 and the 3rd drain electrode d3.Described first grid g1 connects described first sweep trace 61.Described first source electrode s1 connects described data line 65.Described first drain electrode d1 and described second grid g2, the 3rd drains d3 and described memory capacitance C
sone end connect, described memory capacitance C
sthe other end and described power supply V
dDand described second drain electrode d2 connects, that is, this memory capacitance C
sbe connected between described second drain electrode d2 and second grid g2.Described second source electrode s2 for connecting one end of described OLED, the other end ground connection of described OLED.Described 3rd drain electrode d3 and described second grid g2 and described memory capacitance C
sone end connect, described 3rd grid g3 connect described second sweep trace 63, described 3rd source electrode s3 connects described charging wire 67.
Wherein, described first sweep signal V
s1with described second sweep signal V
s2for having the periodic signal of same waveform, and described second sweep signal V
s2relative to described first sweep signal V
s1there is one first time delay.In the present embodiment, described first sweep signal V
s1with the second sweep signal V
s2cycle be frame period of described pixel cell 60, and there is identical peak value V
1, described first time delay was 3/4 frame period.Be appreciated that described first time delay can also be less than for 3/4 frame period, e.g., 2/3 frame period, 3/5 frame period, 1/2 frame period etc.
Wherein, described data-signal V
datawith described charging signals V
cfor having the periodic signal of same waveform, and described charging signals V
crelative to described data-signal V
datathere is one second time delay.In the present embodiment, described data-signal V
datawith charging signals V
ccycle be frame period of described pixel cell 60, and there is identical peak value V
2, described second time delay was 3/4 frame period.Be appreciated that described second time delay can also be less than for 3/4 frame period, e.g., 2/3 frame period, 3/5 frame period, 1/2 frame period etc.
In the present embodiment, described first sweep signal V
s1with described data-signal V
datasynchronizing signal each other, described second sweep signal V
s2with described charging signals V
csynchronizing signal each other, that is, equal described second time delay described first time delay, and the two all can be set to be less than or equal to 3/4 frame period.
Further illustrate the principle of work of described pixel cell 60 below, this sentences described first time delay was 3/4 frame period, and the second time delay was 3/4 frame period is that example is illustrated.
As described first sweep signal V
s1during for high level, the first film transistor T1 is at the first sweep signal V
s1effect under conducting, described data-signal V
databy described the first film transistor T1 to described memory capacitance C
scharge.3rd thin film transistor (TFT) T3 is at the second sweep signal V
s2effect under end.As described memory capacitance C
swhen the voltage being connected to described second grid g2 one end reaches the cut-in voltage of described second thin film transistor (TFT) T2, the second thin film transistor (TFT) T2 conducting, and then drive described OLED luminous.
As described first sweep signal V
s1during for low level, the first film transistor T1 is at the first sweep signal V
s1effect under end.Second thin film transistor (TFT) T2 is at memory capacitance C
seffect under conducting, and then drive described OLED luminous.Because the first film transistor T1 exists leakage current, memory capacitance C
son electric charge can at the first sweep signal V
s1for leaking to described data line 65 along the first film transistor T1 between low period, cause memory capacitance C
svoltage declines gradually.For preventing because of described memory capacitance C
svoltage drop excessive and cause OLED to glimmer, after described the first film transistor T1 ends a schedule time, described 3rd thin film transistor (TFT) T3 is at described second sweep signal V
s2effect under conducting, make described charging signals V
cby described 3rd thin film transistor (TFT) T3 to described memory capacitance C
scharge, thus ensure described memory capacitance C
senough voltage can be provided to drive described OLED luminous continually and steadily, and last till described first sweep signal V
s1become high level, and then repeat said process.Wherein, the described schedule time is less than or equal to 3/4 frame period of pixel cell.
Described pixel cell 60 provides charging signals V by increasing described charging wire 67
c, and by described charging signals V
cbe set to the data-signal V in delay 3/4 frame period
data, and by providing one relative to described first sweep signal V
s1be delayed the second sweep signal V in 3/4 frame period
s2control described 3rd thin film transistor (TFT) T3 conducting or cut-off, with at described first sweep signal V
s1during for low level, by described second sweep signal V
s2control described 3rd thin film transistor (TFT) T3 conducting, thus make described charging signals V
cbe described memory capacitance C by described thin film transistor (TFT) T3
scharging, when being in cut-off state to prevent described the first film transistor T1, because charge leakage makes described memory capacitance C
svoltage instability and cause dodge screen.
See also Fig. 6 and Fig. 7, third embodiment of the invention provides a kind of pixel cell driving method applying above-mentioned pixel unit drive circuit 30.Described pixel cell driving method at least comprises the following steps.
Step S1: the first sweep signal V is provided
s1, the second sweep signal V
s2, data-signal V
dataand charging signals V
c.
Particularly, described first sweep signal V
s1thered is provided by the first sweep trace 61, described second sweep signal V
s2thered is provided by the second sweep trace 63, described data-signal V
datathered is provided by data line 65, described charging signals V
cthered is provided by charging wire 67.
Wherein, described first sweep signal V
s1with described second sweep signal V
s2for having the periodic signal of same waveform, and described second sweep signal V
s2relative to described first sweep signal V
s1there is one first time delay.In the present embodiment, described first sweep signal V
s1with the second sweep signal V
s2cycle be a frame period, and there is identical peak value V
1, described first time delay was 3/4 frame period.Be appreciated that described first time delay can also be less than for 3/4 frame period, e.g., 2/3 frame period, 3/5 frame period, 1/2 frame period etc.
Wherein, described data-signal V
datawith described charging signals V
cfor having the periodic signal of same waveform, and described charging signals V
crelative to described data-signal V
datathere is one second time delay.In the present embodiment, described data-signal V
datawith charging signals V
ccycle be a frame period, and there is identical peak value V
2, described second time delay was 3/4 frame period.Be appreciated that described second time delay can also be less than for 3/4 frame period, e.g., 2/3 frame period, 3/5 frame period, 1/2 frame period etc.
In the present embodiment, described first sweep signal V
s1with described data-signal V
datasynchronizing signal each other, described second sweep signal V
s2with described charging signals V
csynchronizing signal each other, that is, equal described second time delay described first time delay, and the two all can be set to be less than or equal to 3/4 frame period.
Step S2: the first film transistor T1 is at described first sweep signal V
s1effect under conducting, to make described data-signal V
databy described the first film transistor T1 to memory capacitance C
scharging.
Particularly, as described first sweep signal V
s1during for high level, described the first film transistor T1 is at the first sweep signal V
s1effect under conducting, meanwhile, the 3rd thin film transistor (TFT) T3 is at described second sweep signal V
s2effect under end.Described data-signal V
databy described the first film transistor T1 to described memory capacitance C
scharge.
Step S3: as described memory capacitance C
swhen the voltage being connected to second grid g2 one end of the second thin film transistor (TFT) T2 reaches the cut-in voltage of described second thin film transistor (TFT) T2, described second thin film transistor (TFT) T2 conducting, luminous with driving OLED.
Step S4: described the first film transistor T1 is at described first sweep signal V
s1effect under end, and described memory capacitance C
scontinue to maintain described second thin film transistor (TFT) T2 conducting, to drive described OLED luminous.
Particularly, as described first sweep signal V
s1during for low level, described the first film transistor T1 is at described first sweep signal V
s1effect under end.Described second thin film transistor (TFT) T2 is at memory capacitance C
seffect under conducting, and then drive described OLED luminous.Because the first film transistor T1 exists leakage current, described memory capacitance C
son electric charge can at the first sweep signal V
s1for leaking to described data line 65 along the first film transistor T1 between low period, cause memory capacitance C
svoltage declines gradually.
Step S5: after described the first film transistor T1 ends a schedule time, the 3rd thin film transistor (TFT) T3 is at described second sweep signal V
s2effect under conducting, and make described charging signals V
cby described 3rd thin film transistor (TFT) T3 to described memory capacitance C
scharging.Wherein, the described schedule time is less than or equal to 3/4 frame period of pixel cell.
Particularly, for preventing because of described memory capacitance C
svoltage drop excessive and cause OLED to glimmer, after described the first film transistor T1 ends the described schedule time, described 3rd thin film transistor (TFT) T3 is at described second sweep signal V
s2effect under conducting, make described charging signals V
cby described 3rd thin film transistor (TFT) T3 to described memory capacitance C
scharge, thus ensure described memory capacitance C
senough voltage can be provided to drive described OLED luminous continually and steadily, and last till described first sweep signal V
s1become high level, and then repeat above-mentioned steps S1-S5.
Above disclosedly be only preferred embodiment of the present invention, certainly the interest field of the present invention can not be limited with this, one of ordinary skill in the art will appreciate that all or part of flow process realizing above-described embodiment, and according to the equivalent variations that the claims in the present invention are done, still belong to the scope that invention is contained.
Claims (10)
1. a pixel unit drive circuit, for driving organic electroluminescence device, it is characterized in that, described pixel unit drive circuit comprises the first film transistor, second thin film transistor (TFT), 3rd thin film transistor (TFT) and memory capacitance, described the first film transistor is used for conducting or cut-off under the control of one first sweep signal, and give the charging of described memory capacitance when conducting by a data-signal, described second thin film transistor (TFT) is used for conducting under the effect of described memory capacitance and drives an Organic Light Emitting Diode (Organic Light-EmittingDiode, OLED) luminous, described 3rd thin film transistor (TFT) is used for when described the first film transistor cutoff, conducting under the control of one second sweep signal, and give the charging of described memory capacitance by a charging signals.
2. pixel unit drive circuit as claimed in claim 1, it is characterized in that, described the first film transistor comprises first grid, first source electrode and the first drain electrode, described second thin film transistor (TFT) comprises second grid, second source electrode and the second drain electrode, described 3rd thin film transistor (TFT) comprises the 3rd grid, 3rd source electrode and the 3rd drain electrode, described first grid is for receiving described first sweep signal, described first source electrode is for receiving described data-signal, described first drain electrode and described second grid, one end of described 3rd drain electrode and described memory capacitance connects, the other end and described second of described memory capacitance drains and is connected, described second source electrode is connected with one end of described OLED, the other end ground connection of described OLED, described 3rd drain electrode is connected with one end of described second grid and described memory capacitance, described 3rd grid is for receiving described second sweep signal, described 3rd source electrode is for receiving described charging signals.
3. pixel unit drive circuit as claimed in claim 2, it is characterized in that, described pixel unit drive circuit also comprises a power supply, and described power supply and described second drains and is connected, for providing driving voltage for described pixel unit drive circuit.
4. a pixel cell, comprise the first sweep trace and data line, it is characterized in that, described pixel cell also comprises the second sweep trace, charging wire and the pixel unit drive circuit as described in claim 1-3 any one, described first sweep trace is used for providing the first sweep signal, described second sweep trace is used for providing the second sweep signal, described data line is used for providing data-signal, described charging wire is used for providing charging signals, described second sweep signal had for one first time delay relative to described first sweep signal, described charging signals had for one second time delay relative to described data-signal.
5. pixel cell as claimed in claim 4, it is characterized in that, described first sweep signal and described data-signal synchronizing signal each other, described second sweep signal and described charging signals synchronizing signal each other, and the cycle of described first sweep signal, the second sweep signal, data-signal and charging signals be a frame period of described pixel cell.
6. pixel cell as claimed in claim 5, it is characterized in that, described first time delay equals described second time delay, and is all less than or equal to described first time delay and the second time delay 3/4 frame period of described pixel cell.
7. a pixel cell driving method, is characterized in that, described method comprises:
First sweep signal, the second sweep signal, data-signal and charging signals are provided;
The conducting under the effect of described first sweep signal of the first film transistor, is charged to memory capacitance by described the first film transistor to make described data-signal;
When the voltage that described memory capacitance is connected to second grid one end of the second thin film transistor (TFT) reaches the cut-in voltage of described second thin film transistor (TFT), described second thin film transistor (TFT) conducting, to drive an Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) luminous;
Described the first film transistor ends under the effect of described first sweep signal, and described memory capacitance continues to maintain described second thin film transistor (TFT) conducting, to drive described OLED luminous;
When after described the first film transistor cutoff one schedule time, the conducting under the effect of described second sweep signal of the 3rd thin film transistor (TFT), and described charging signals is charged to described memory capacitance by described 3rd thin film transistor (TFT).
8. pixel cell driving method as claimed in claim 7, it is characterized in that, described first sweep signal and described data-signal synchronizing signal each other, described second sweep signal and described charging signals synchronizing signal each other, described second sweep signal had for one first time delay relative to described first sweep signal, described charging signals had for one second time delay relative to described data-signal, and the cycle of described first sweep signal, the second sweep signal, data-signal and charging signals is a frame period of described pixel cell.
9. pixel cell driving method as claimed in claim 8, it is characterized in that, described first time delay equals described second time delay, and is all less than or equal to described first time delay and the second time delay 3/4 frame period of described pixel cell.
10. pixel cell driving method as claimed in claim 9, it is characterized in that, the described schedule time equals described first time delay or the second time delay.
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| CN201510229135.XA CN104809983B (en) | 2015-05-07 | 2015-05-07 | Pixel unit drive circuit, driving method and pixel cell |
| US14/761,344 US9779660B2 (en) | 2015-05-07 | 2015-05-12 | Pixel unit driving circuit, driving method and pixel cell |
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| CN201510229135.XA CN104809983B (en) | 2015-05-07 | 2015-05-07 | Pixel unit drive circuit, driving method and pixel cell |
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| CN104809983B CN104809983B (en) | 2017-07-04 |
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