CN104795497A - Insulating layer modifying method for ink-jet printing of organic thin film transistor - Google Patents
Insulating layer modifying method for ink-jet printing of organic thin film transistor Download PDFInfo
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Abstract
The invention discloses an insulating layer modifying method for ink-jet printing of an organic thin film transistor. The method comprises the steps of forming a hydrophilic area on a gate insulating layer of a substrate, synthesizing an atom transfer radical polymerization (ATRP) silane end initiator, and growing the ATRP silane end initiator on the insulating layer of the substrate to form an ATRP initiator monomolecular layer. The ATRP initiator monomolecular layer initiates atom transfer radical polymerization of a monomer on the surface of the substrate, and a layer of polymer molecule brush is formed on the surface of the substrate through a polymerization reaction and used as a modifying layer for ink-jet printing of a gate insulating layer of an organic thin film transistor. By controlling the polymerization time, the film thickness of the polymer molecule brush modifying layer is changed to different degrees so as to adjust and control the size, shape and crystal habit of a semiconductor ink droplet single-point film for ink-jet printing and to adjust and control the electrical properties of an ink-jet printing single-point device.
Description
Technical field
The present invention relates to technical field of liquid crystal display, particularly relate to a kind of insulating barrier method of modifying for inkjet printing OTFT.
Background technology
Because organic semiconductor thin-film all has larger body conductance usually, if the organic semiconductor thin-film of film transistor device is connected to each other in integrated circuit, one side is easy produces crosstalk between adjacent devices, also the leakage current of device can be made greatly to increase on the other hand, cause switch current ratio to reduce.The existence of these problems seriously hinders the application of OTFT device in large area array and integrated circuit, and therefore the patterning of active layer is especially important.
Inkjet printing patterning process has incomparable advantage in all patterning methods.First it can realize from writing in patterning.Only need to control at on-chip coordinate print nozzles, set the spacing distance between two print points, just can not rely on the film preparation that other factors (as masterplate, design etc.) carry out patterning.And ink-jet printing process can also prepare insulating layer material and the electrode material of patterning.The mechanization of ink jet printing device and intelligence degree are extremely advanced, and especially when preparing large-area organic thin film transistor array, multiple black head cooperating can the preparation of finishing patterns film in a short period of time.But ink-jet printing process exists fatal defect, organic thin film transistor device performance prepared by its method is also poor.The film that main because ink jet printing device prints is uneven, and especially single-point prints, and ink droplet easily occurs coffee toroidal effect in dry run, and form surrounding thick, the film of intermediate thin, the interface topography of film is not good, the very large transmission affecting charge carrier.Single droplet volume is little, can form the very thin fluid film of one deck after spreading over substrate surface, and its dry run and dried semiconductor layer pattern and crystal habit affect by the surface nature of substrate to a great extent.In order to improve single-point film morphology and crystal habit, current utilization is more to be had by regulating and controlling substrate surface energy, changing interfacial property in methods such as substrate surface growth organic supramolecular decorative layer, spin-coated polymer layers, thus realizes the regulation and control to film morphology and crystallization.
Summary of the invention
The object of this invention is to provide a kind of insulating barrier method of modifying for inkjet printing OTFT, the pattern of the semiconductive thin film printed in order to regulation and control and crystal habit, to regulate and control the electric property of device.
The technical solution used in the present invention is:
For the insulating barrier method of modifying of inkjet printing OTFT, it is characterized in that, comprise the following steps:
(1) synthesize ATRP ATRP silane end initator, the synthesis of described silane end initator comprises the following steps:
Getting the oxolane mixing of dry triethylamine 7.2ml and 80ml respectively, is a liquid; 2-bromo-2-methyl-propionyl bromide 5.92ml and the mixing of 40ml oxolane are b liquid; Slow dropping b liquid is in a liquid, sediment after stirring at room temperature 3.8-4.1h in elimination reactant liquor, pour in the carrene of 100ml by after oxolane evaporate to dryness, mixed liquor aqueous hydrochloric acid solution extracts, and with anhydrous magnesium sulfate drying, finally vacuumize dry oily liquids, i.e. silane end initator (3-aminopropyl)-triethoxysilane;
(2) by solwution method, above ATRP silane end initator is grown on the insulating barrier of substrate, form ATRP initator monolayer, described solwution method comprises the following steps: get the above-mentioned silane end initator of 0.3ml and be dissolved in the dry toluene of 60-62ml, silicon chip is dipped in above-mentioned solution and is heated to 50 DEG C, heating 3.9-4.1h, under moving to room temperature after stirring, silicon chip is dipped in solution and keeps 12-12.5h, the ultrasonic 9-10min of toluene of 25-26ml is put into after taking out silicon chip, use acetone and each ultrasonic 4-5min of methyl alcohol more successively, finally dry up silicon chip with nitrogen;
(3) by ATRP initator monolayer trigger monomer at substrate surface generation ATRP, form the one layer of polymeric molecular brush decorative layer as inkjet printing OTFT gate insulation layer by polymerization reaction at substrate surface; Concrete technology step is: will prepare surperficial ATRP(ATRP above by solwution method) silicon chip of initator monolayer puts into flask with diaphragm of rubber, extraction nitrogen 3 times, and nitrogen atmosphere is protected; Respectively get the styrene of 54ml, 220mg copper bromide and 66ml anhydrous anisole are in the flask of another band diaphragm of rubber, and inflated with nitrogen 1h; The PMDETA getting 628 μ L adds in this mixed system, mixed liquor stirs until become even at 100 DEG C, with syringe, mixed liquor is injected the last flask being placed with initator silicon chip, 12h is polymerized at 100 DEG C, and add 92 μ L radical initiator ethyl-2-bromo acid esters, polymerization terminates rear dichloromethane rinse silicon chip and ATRP crystal grain, then by silicon chip oxolane surname extraction 24H;
(4) by controlling polymerization time, the thickness of change polymer molecule brush decorative layer in various degree, to regulate and control the size of the semiconductor ink droplet single-point film of inkjet printing, pattern and crystal habit, thus the electric property of regulation and control inkjet printing single-point device.
2, the described insulating barrier method of modifying for inkjet printing OTFT, is characterized in that, described substrate is silicon chip and glass substrate.
3, the described insulating barrier method of modifying for inkjet printing OTFT, is characterized in that, described polymerization is ATRP polymerization.
4, the described insulating barrier method of modifying for inkjet printing OTFT, it is characterized in that, the thickness of polymer insulation layer can be controlled by polymerization time, described polymerization time is 6-24h, and described polymer insulation layer thickness is 4-16nm.
6, the described insulating barrier method of modifying for inkjet printing OTFT, it is characterized in that, described insulating polymer molecular brush material is the block copolymer of polystyrene, poly-(methyl) esters of acrylic acid, polyacrylonitrile, polydiene hydrocarbon rubbers and above polymer, preferred polystyrene.
7, the described insulating barrier method of modifying for inkjet printing OTFT, is characterized in that, the solvent of described semiconductor ink droplet solution is dichloro-benzenes, tetrahydronaphthalene or methyl phenyl ethers anisole.
8, the described insulating barrier method of modifying for inkjet printing OTFT, it is characterized in that, comprise the gate electrode, gate insulation layer, polymer molecule brush decorative layer, source-drain electrode and the organic semiconductor layer that are arranged in order, wherein, described polymer molecule brush decorative layer is namely by method preparation described in claim 1, and organic semiconductor layer is obtained by inkjet printing.
9, the described insulating barrier method of modifying for inkjet printing OTFT, it is characterized in that, the semi-conducting material of described organic semiconductor layer is Small molecular type semiconductor, preferably 6, two (the tri isopropyl silane ethyl-acetylene base) pentacene (TIPS-pentacene), 2 of 13-, 7-didecyl-[1] benzothiophene [3,2-b] [1]-benzothiophene (BTBT).
10, the described insulating barrier method of modifying for inkjet printing OTFT, it is characterized in that, described source-drain electrode is obtained by gold, silver, aluminium or Graphene.
11, the described insulating barrier method of modifying for inkjet printing OTFT, the solution quality percentage concentration of semiconductive small molecule/ink droplet solvent is 2%.
Advantage of the present invention is:
Adopt technical solution of the present invention, polymer insulation layer surface uniform is smooth, inside is the polymer chain segment structure that chain length is different, with grafting, the substrate of PS insulating barrier is prepared organic thin film transistor device and is improved the size of the interfacial property of substrate and organic semiconductor layer and semiconductor single-point and film, pattern and crystal habit within the specific limits, improves the electric property of organic thin film transistor device.
Accompanying drawing explanation
Fig. 1 is the synthesis equation of ATRP silane end initator.
Fig. 2 is the synthesis equation of substrate surface initator monolayer.
Fig. 3 is the synthesis equation of substrate surface polystyrene molecular brush decorative layer.
In Fig. 4, (a) schemes for silicon chip surface ATRP initator monolayer XPS, and (b) is XPS figure after grafting PS.
The contact angle that in Fig. 5, (a) is silicon chip surface initator monolayer water changes, and the contact angle that (b) is water after grafting PS changes.
Fig. 6 is TIPS-BEN single-point and UV/O3(UV ozone cleaning apparatus that silicon chip surface PS molecular brush decorative layer prints), HMDS(hexamethyldisiloxane), ODTS(octadecyl trichlorosilane alkane) the petrographic microscope figure of TIPS-BEN single-point that treatment surface prints, the single-point array wherein a) b) printed for UV/O3 process is lower and single-point, c) single-point array and the single-point of printing under HMDS process d) is respectively, e) single-point array and the single-point of printing under ODTS process f) is respectively, g) h) i) PS thickness 4nm is respectively, 10nm, the single-point printed under 16nm.
Fig. 7 is that the XRD of the TIPS-BEN single-point array that TIPS-BEN single-point array and UV/O3, HMDS, ODTS treatment surface that silicon chip surface PS molecular brush decorative layer prints print characterizes comparison diagram.
Fig. 8 is at silicon chip surface PS molecular brush decorative layer and UV/O3, HMDS, the TIPS-BEN single-point machine film transistor device optics that ODTS treatment surface prints and petrographic microscope figure, a) be wherein UV/O3 process, b) be HMDS process, c) being ODTS process, d) is PS thickness 16nm.
Fig. 9 is the TIPS-BEN single-point machine film transistor device performance map printed on the PS molecular brush decorative layer and UV/O3 treatment surface of the different thickness 4-16nm of silicon chip surface, a) be wherein the device performance figure under UV/O3 process, b) be the device performance figure of PS thickness 4nm, c) be device performance figure, the d of PS thickness 10nm) be the device performance figure of PS thickness 16nm.
Embodiment
(1) ATRP (ATRP) silane end initator is synthesized;
(2) solwution method is by above ATRP silane end initator growth on the insulating barrier of substrate, forms ATRP initator monolayer.
(3) ATRP initator monolayer trigger monomer is at substrate surface generation ATRP, forms the decorative layer of one layer of polymeric molecular brush as inkjet printing OTFT gate insulation layer by polymerization reaction at substrate surface;
(4) by controlling polymerization time, the thickness of change polymer molecule brush decorative layer in various degree, to regulate and control the size of the semiconductor ink droplet single-point film of inkjet printing, pattern and crystal habit, thus the electric property of regulation and control inkjet printing single-point device.
Embodiment
1. the synthesis of silane end initator
Get dry triethylamine (7.2ml respectively, 52mmol) with the mixing of 80ml oxolane, the bromo-2-methyl-propionyl bromide of 2-(5.92ml, 48mmol) with the mixing of 40ml oxolane, slow dropping 2-bromo-2-methyl-propionyl bromide mixed liquor is in last mixed liquor, sediment in elimination reactant liquor after stirring at room temperature 4h, 100ml carrene is poured into by after oxolane evaporate to dryness, mixed liquor aqueous hydrochloric acid solution extracts, and with anhydrous magnesium sulfate drying, finally vacuumize dry oily liquids, i.e. silane end initator (3-aminopropyl)-triethoxysilane
2. the cleaning of substrate
Heat growth there is is the silicon chip of 300nm SiO2, successively through acetone and each ultrasonic 10min of ethanol, then use a large amount of pure water rinsing, and after nitrogen dries up, with UV-ozone cleaning apparatus cleaning 15min.
3.ATRP surface aggregate
By solwution method, above ATRP silane end initator is grown on the insulating barrier of substrate, form ATRP initator monolayer, described solvent method comprises the following steps: get 0.3ml initator and be dissolved in dry toluene 60ml, be dipped in by silicon chip in solution and be heated to 50 DEG C, heating 4h, under moving to room temperature after stirring, now silicon chip is still dipped in 12h in solution, put into the ultrasonic 10min of 25ml toluene after taking out silicon chip, then use acetone and each ultrasonic 5min of methyl alcohol successively, finally dry up silicon chip with nitrogen.
4. the modification of surface insulation layer
By ATRP initator monolayer trigger monomer at substrate surface generation ATRP, form the decorative layer of one layer of polymeric molecular brush as inkjet printing OTFT gate insulation layer by polymerization reaction at substrate surface; Concrete technology step is: will prepare surperficial ATRP(ATRP above by solwution method) silicon chip of initator monolayer puts into flask with diaphragm of rubber, and extraction nitrogen 3 times, nitrogen atmosphere is protected.Respectively get the styrene of 54ml, 220mg copper bromide and 66ml anhydrous anisole are with in the flask of diaphragm of rubber in another, nitrogen bubble 1h.The PMDETA getting 628 μ L adds in this mixed system, mixed liquor stirs until become even at 100 DEG C, with syringe, mixed liquor is injected the last flask being placed with initator silicon chip, and add 92 μ L radical initiator ethyl-2-bromo acid esters, be polymerized at 100 DEG C, polymerization time is that 6h to 24h does not wait with the polystyrene molecular brush thin layer preparing different thickness.Polymerization terminates rear dichloromethane rinse silicon chip and ATRP crystal grain, then by silicon chip oxolane surname extraction 24h.
5. the preparation of single-point OTFT device
The gold electrode of hot evaporation 40nm as source, drain electrode, and at electrode position inkjet printing 20mg/mL TIPS pentacene/naphthane ink single-point, obtains the OTFT device of bottom gate top contact.
Principle of the present invention is:
Silane end ATRP(ATRP is prepared by methodology of organic synthesis) initator (reaction equation is as Fig. 1), by solwution method, this silane initator is chemically bonded to silicon chip surface again, prepare silicon chip surface ATRP monolayer initator (reaction equation is as Fig. 2), 100 DEG C are caused styrene silicon chip surface generation ATRP polymerization again, prepare silicon chip surface polystyrene molecular brush (reaction equation is as Fig. 3), polystyrene molecular brush thickness regulates and controls by polymerization time, polymerization time is longer within the specific limits, molecular brush thin layer is thicker: long is upon polymerization 6h, polystyrene molecular brush thickness is 4nm, polymerization duration 16h, polystyrene molecular brush thickness is 10nm, polymerization duration is 24h, and molecular brush thickness is 16nm.Along with the growth of ATRP polymerization time, the PS chain length obtained changes, and the PS thickness of silicon chip surface grafting is also different.The silicon chip surface of grafting PS changes compared with the contact angle of UV/O3 surface treatment water, and situation as shown in Figure 5.The silicon chip surface of polymerization reaction molecular brush is had in synthesis, through UV/O3, or the non-crystallizable not orientation of ink single-point of silicon chip inkjet printing after ODTS, HMDS surface treatment, situation is as shown in Figure 6.Can find out from Fig. 6 and 8, at the silicon chip surface ink-jet printing ink single-point of grafting PS chain, the feature of obvious generation crystalline orientation, and along with the increase of PS thickness, the pattern situation of crystallization and orientation changes, the crystallinity of the single-point TIPS pentacene in certain film thickness range has greatly improved, if thickness is that the single-point that the PS molecular brush film of 4nm and 10nm prints has obvious crystalline orientation, the film printed also has continuous print crystalline orientation, when PS molecular brush thickness is 16nm, single-point crystallization presents continuous sheet pattern.Such orientation or continuous print crystal habit are conducive to, the transmission of charge carrier and the raising of device electric property.As can be seen here, by regulating and controlling polymerization time thus regulation and control PS thickness, can realize single-point in inkjet printing and film dimensions, pattern and crystalline regulation and control.
As can be seen from Figure 9, device average mobility that one layer of polymeric molecular brush prepared as the silicon chip surface inkjet printing of the decorative layer of inkjet printing OTFT gate insulation layer is formed in certain film thickness range apparently higher than the device average mobility 3.76e-4 printed by means of only surface-treated silicon chips such as UV/O3 at substrate surface by polymerization reaction, the increase of thickness, be conducive to improving device mobility in right amount, device average mobility as obtained when PS thickness is 4nm is 1.68e-3, and the device average mobility obtained when thickness is 16nm is 9.47e-3.
Claims (9)
1., for an insulating barrier method of modifying for inkjet printing OTFT, it is characterized in that comprising the following steps:
(1) synthesize ATRP ATRP silane end initator, the synthesis of described silane end initator comprises the following steps:
Getting the oxolane mixing of dry triethylamine 7.2ml and 80ml respectively, is a liquid; 2-bromo-2-methyl-propionyl bromide 5.92ml and the mixing of 40ml oxolane are b liquid; Slow dropping b liquid is in a liquid, sediment after stirring at room temperature 3.8-4.1h in elimination reactant liquor, pour in the carrene of 100ml by after oxolane evaporate to dryness, mixed liquor aqueous hydrochloric acid solution extracts, and with anhydrous magnesium sulfate drying, finally vacuumize dry oily liquids, i.e. silane end initator (3-aminopropyl)-triethoxysilane;
(2) by solwution method, above ATRP silane end initator is grown on the insulating barrier of substrate, form ATRP initator monolayer, described solwution method comprises the following steps: get the above-mentioned silane end initator of 0.3ml and be dissolved in the dry toluene of 60-62ml, silicon chip is dipped in above-mentioned solution and is heated to 50 DEG C, heating 3.9-4.1h, under moving to room temperature after stirring, silicon chip is dipped in solution and keeps 12-12.5h, the ultrasonic 9-10min of toluene of 25-26ml is put into after taking out silicon chip, use acetone and each ultrasonic 4-5min of methyl alcohol more successively, finally dry up silicon chip with nitrogen;
(3) by ATRP initator monolayer trigger monomer at substrate surface generation ATRP, form the one layer of polymeric molecular brush decorative layer as inkjet printing OTFT gate insulation layer by polymerization reaction at substrate surface; Concrete technology step is: will prepare surperficial ATRP(ATRP above by solwution method) silicon chip of initator monolayer puts into flask with diaphragm of rubber, extraction nitrogen 3 times, and nitrogen atmosphere is protected; Respectively get the styrene of 54ml, 220mg copper bromide and 66ml anhydrous anisole are in the flask of another band diaphragm of rubber, and inflated with nitrogen 1h; The PMDETA getting 628 μ L adds in this mixed system, mixed liquor stirs until become even at 100 DEG C, with syringe, mixed liquor is injected the last flask being placed with initator silicon chip, 12h is polymerized at 100 DEG C, and add 92 μ L radical initiator ethyl-2-bromo acid esters, polymerization terminates rear dichloromethane rinse silicon chip and ATRP crystal grain, then by silicon chip oxolane surname extraction 24H;
(4) by controlling polymerization time, the thickness of change polymer molecule brush decorative layer in various degree, to regulate and control the size of the semiconductor ink droplet single-point film of inkjet printing, pattern and crystal habit, thus the electric property of regulation and control inkjet printing single-point device.
2. the insulating barrier method of modifying for inkjet printing OTFT according to claim 1, is characterized in that, described substrate is silicon chip and glass substrate.
3. the insulating barrier method of modifying for inkjet printing OTFT according to claim 1, is characterized in that, described polymerization is ATRP polymerization.
4. the insulating barrier method of modifying for inkjet printing OTFT according to claim 1, it is characterized in that, the thickness of polymer insulation layer can be controlled by polymerization time, and described polymerization time is 6-24h, and described polymer insulation layer thickness is 4-16nm.
5. the insulating barrier method of modifying for inkjet printing OTFT according to claim 1, it is characterized in that, described insulating polymer molecular brush material is the block copolymer of polystyrene, poly-(methyl) esters of acrylic acid, polyacrylonitrile, polydiene hydrocarbon rubbers and above polymer, preferred polystyrene.
6. the insulating barrier method of modifying for inkjet printing OTFT according to claim 1, is characterized in that, the solvent of described semiconductor ink droplet solution is dichloro-benzenes, tetrahydronaphthalene or methyl phenyl ethers anisole.
7. the OTFT based on claim 1, it is characterized in that, comprise the gate electrode, gate insulation layer, polymer molecule brush decorative layer, source-drain electrode and the organic semiconductor layer that are arranged in order, wherein, described polymer molecule brush decorative layer is namely by method preparation described in claim 1, and organic semiconductor layer is obtained by inkjet printing.
8. OTFT according to claim 8, it is characterized in that, the semi-conducting material of described organic semiconductor layer is Small molecular type semiconductor, preferably 6, two (the tri isopropyl silane ethyl-acetylene base) pentacene (TIPS-pentacene), 2 of 13-, 7-didecyl-[1] benzothiophene [3,2-b] [1]-benzothiophene (BTBT).
9. OTFT according to claim 8, is characterized in that, described source-drain electrode is obtained by gold, silver, aluminium or Graphene.
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Cited By (2)
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| CN105932156A (en) * | 2016-05-03 | 2016-09-07 | 南京邮电大学 | Method for manufacturing organic field effect transistor (OFET) through printing |
| CN107195781A (en) * | 2017-05-24 | 2017-09-22 | 华南师范大学 | A kind of high mobility transistor for small molecule of being adulterated based on PMMA and preparation method thereof |
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| US20100230662A1 (en) * | 2009-03-13 | 2010-09-16 | National Tsing Hua University | Organic Thin Film Transistor, Method of Fabricating the Same, and Gate Insulating Layer Used in the Same |
| CN102623639A (en) * | 2012-04-10 | 2012-08-01 | 合肥工业大学 | Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step |
| CN103762314A (en) * | 2013-12-31 | 2014-04-30 | 合肥工业大学 | Insulating layer decorating method for printing organic thin-film transistor in ink jet mode |
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| CN101267020A (en) * | 2008-04-29 | 2008-09-17 | 友达光电股份有限公司 | Organic film transistor and its making method |
| US20100230662A1 (en) * | 2009-03-13 | 2010-09-16 | National Tsing Hua University | Organic Thin Film Transistor, Method of Fabricating the Same, and Gate Insulating Layer Used in the Same |
| CN102623639A (en) * | 2012-04-10 | 2012-08-01 | 合肥工业大学 | Method for manufacturing organic thin film transistor realizing patterning and automatic-modification interface in one step |
| CN103762314A (en) * | 2013-12-31 | 2014-04-30 | 合肥工业大学 | Insulating layer decorating method for printing organic thin-film transistor in ink jet mode |
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| CN105932156A (en) * | 2016-05-03 | 2016-09-07 | 南京邮电大学 | Method for manufacturing organic field effect transistor (OFET) through printing |
| CN107195781A (en) * | 2017-05-24 | 2017-09-22 | 华南师范大学 | A kind of high mobility transistor for small molecule of being adulterated based on PMMA and preparation method thereof |
| CN107195781B (en) * | 2017-05-24 | 2020-07-07 | 华南师范大学 | PMMA-doped small molecule-based high-mobility transistor and preparation method thereof |
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