CN104795104A - Flash memory device and erase method thereof - Google Patents
Flash memory device and erase method thereof Download PDFInfo
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- CN104795104A CN104795104A CN201410022779.7A CN201410022779A CN104795104A CN 104795104 A CN104795104 A CN 104795104A CN 201410022779 A CN201410022779 A CN 201410022779A CN 104795104 A CN104795104 A CN 104795104A
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- memory block
- erasing instruction
- wiped free
- flash memory
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Abstract
The invention discloses a flash memory device and its erase method. According to the invention, whether a memory block corresponding to an erase instruction has already been erased is detected; and if the memory block corresponding to the erase instruction has not been erased, the memory block is pre-programmed. By the erase method, service life of the flash memory device can be prolonged.
Description
Technical field
The present invention relates to a kind of storage arrangement, and in particular to a kind of tandem parallel interface (SerialParallel Interface, SPI) flash memory device and method for deleting thereof.
Background technology
Non-volatile memory device (as flash memory) has the characteristic not needing power supply can preserve data, and has erasing and the function of write, is therefore widely used on various electronic product.
The method for deleting of known flash memory includes pre-programmed (pre-program), erasing (erase), step with rear sequencing (post-program) etc.Preprogrammed step can by the storage unit of the flash memory for erasing write 0, to be adjusted to identical voltage by for the critical voltage of storage unit in erase blocks, improve the stability of erasing flash memory data, storage unit can be write 1 by erase step, the critical voltage of storage unit too low for critical voltage then can improve, so that the storage unit of too wiping is returned to normal threshold voltage ranges by the step of then sequencing.Though known method for deleting effectively can improve the situation that storage unit is too wiped, the steps such as the pre-program that all must perform when so at every turn carrying out memory erase, erasing and rear sequencing, so will significantly reduce the serviceable life of flash memory.
Summary of the invention
The invention provides a kind of flash memory device and method for deleting thereof, significantly can improve the serviceable life of flash memory.
Flash memory device of the present invention, comprises memory cell, sensing amplifier and control module.Wherein memory cell comprises multiple memory block.Sensing amplifier coupled memory cells, senses and amplifies the data stored by memory cell.Control module coupled memory cells and sensing amplifier, whether the memory block detecting corresponding erasing instruction according to erasing instruction is wiped free of, if the memory block of corresponding erasing instruction is not wiped free of just pre-programmed memory block.
In one embodiment of this invention, above-mentioned control module also reads the memory block of corresponding erasing instruction, to judge whether the memory block of corresponding erasing instruction is wiped free of.
In one embodiment of this invention, above-mentioned control module is that the memory block of mode to corresponding erasing instruction read with order reads.
In one embodiment of this invention, if control module detects that the memory block of corresponding erasing instruction is wiped free of, control module makes the memory block of corresponding erasing instruction enter standby condition or tenth skill.
The method for deleting of flash memory device of the present invention, comprises the following steps.Receive erasing instruction.Whether the memory block detecting corresponding erasing instruction according to erasing instruction is wiped free of.If the memory block of corresponding erasing instruction is not wiped free of, pre-programmed memory block.
In one embodiment of this invention, the step whether memory block of the corresponding erasing instruction of above-mentioned detection has been wiped free of comprises, read the memory block of corresponding erasing instruction, and judge whether the memory block of corresponding erasing instruction is wiped free of according to the reading result of the memory block of corresponding erasing instruction.
In one embodiment of this invention, the reading manner of the memory block of above-mentioned corresponding erasing instruction is read in the mode of order read-write.
In one embodiment of this invention, if the memory block of corresponding erasing instruction is wiped free of, the memory block of corresponding erasing instruction is made to enter standby condition or tenth skill.
Based on above-mentioned, whether embodiments of the invention are wiped free of by first detecting memory block before wiping memory block, can avoid carrying out unnecessary sequencing and erasing move to memory cell, thus can extend the serviceable life of flash memory device.
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Fig. 1 illustrates the schematic diagram of the flash memory device of one embodiment of the invention.
Fig. 2 illustrates the schematic flow sheet of the method for deleting of the flash memory device of one embodiment of the invention.
Wherein, description of reference numerals is as follows:
102: memory cell
104: sensing amplifier
106: control module
S202 ~ S212: the process step of the method for deleting of flash memory device
Embodiment
Fig. 1 illustrates the schematic diagram of the flash memory device of one embodiment of the invention, please refer to Fig. 1.Wherein flash memory device can be such as tandem parallel interface (Serial Parallel Interface, SPI) flash memory device, flash memory device comprises memory cell 102, sensing amplifier 104 and control module 106, wherein control module 106 coupled memory cells 102 and sensing amplifier 104, and sensing amplifier 104 is also coupled to memory cell 102.Memory cell 102 comprises multiple memory block, and each memory block comprises multiple page be made up of storage unit.Under the structure of flash memory, memory block is the least unit of erasing, and the page in memory block is the minimum unit of sequencing (also known as write), and the page being written into data could write data after must being first wiped free of again, therefore storer be erased to 10 points of actions frequently.Sensing amplifier 104 coupled memory cells 102, in order to sense and to amplify the data stored by memory cell 102.Control module 106 then can carry out the actions such as sequencing, reading or erasing according to steering order (such as programmed instructions, reading command and erasing instruction) to memory cell 102.
Specifically, each storage unit has control gate (Control Gate) and floating gate (FloatingGate), and wherein control gate is connected to control module 106 through character line.The data of storage unit are determined by electronics number stored in floating gate.When storing more electronics in floating gate, want conducting storage unit must the voltage giving control gate higher (general definition data are now 0), and when storing less electronics in floating gate, conducting storage unit must the voltage giving control gate lower (general definition data are now 1).To write to storage unit the voltage that data 0 or data 1 can be provided to control gate by adjustment control, when control module 106 gives the control gate of positive voltage to storage unit through character line, can by electron injection floating gate, and make storage unit storage data 0, now storage unit has higher critical voltage.And when control module 106 gives the control gate of negative voltage to storage unit through character line, electronics can be driven out of floating gate, and make storage unit storage data 1, now storage unit has lower critical voltage.
When control module 106 receives erasing instruction, control module 106 first can carry out blank to the memory block of corresponding erasing instruction and detect (blank check), that is whether the memory block detecting corresponding erasing instruction was wiped free of.The mode whether memory block detecting corresponding erasing instruction had been wiped free of can such as read the memory block of corresponding erasing instruction, such as, control module 106 can pass through character line and sends the control gate reading storage unit in voltage to memory block, sensing amplifier 104 then senses the electric current on the bit line that is connected with storage unit, and sensed electric current and reference current are compared, use and learn data stored by storage unit according to comparative result.
Wherein, the mode that the mode that control module 106 reads the memory block of corresponding erasing instruction can such as read with order is carried out, any storage unit is had to be written into data (that is storage unit storage data 0) when control module 106 detects in the memory block of corresponding erasing instruction, then represent this memory block not to be wiped free of, and the action of pre-programmed, erasing and rear sequencing must be carried out.On the contrary, if control module 106 to read in the memory block of corresponding erasing instruction after all storage unit, all be not found to storage unit and be written into data, then represent this memory block to be wiped free of, therefore do not need again to the action that it is wiped, control module 106 can skip and carries out the actions such as pre-programmed, erasing and rear sequencing to this memory block, and makes the memory block of corresponding erasing instruction enter standby condition also or tenth skill.Wherein above-mentioned standby condition can be such as sequencing standby condition, after unit 106 to be controlled receives programmed instructions, then the memory block entering sequencing standby condition is carried out to the action of sequencing.
As mentioned above, whether be wiped free of by first detecting memory block before wiping memory block, can avoid carrying out unnecessary sequencing and erasing move to memory cell 102, thus can extend the serviceable life of flash memory device, and reduce power attenuation.In addition, due to read memory block institute must time be shorter than erasing memory block institute must time of action of execution, therefore also can improve the efficiency of wiping storer.
Fig. 2 illustrates the schematic flow sheet of the method for deleting of the flash memory device of one embodiment of the invention, please refer to Fig. 2.The method for deleting of concluding above-mentioned flash memory device can comprise the following steps, first, receives erasing instruction (step S202).Then, whether the memory block detecting corresponding erasing instruction according to erasing instruction is wiped free of (step S204), the mode whether memory block wherein detecting corresponding erasing instruction has been wiped free of can be such as, read the memory block of corresponding erasing instruction, and judge that to should the memory block of erasing instruction whether be wiped free of, the reading manner of above-mentioned memory block can such as the mode read and write with order reads according to the reading result of memory block.When there being any storage unit to be written into data (that is storage unit storage data 0) in the memory block detecting corresponding erasing instruction, representing this memory block and not being wiped free of.And if read in the memory block of corresponding erasing instruction after all storage unit, be not all found to storage unit and be written into data, then represented this memory block and be wiped free of.
If the memory block of corresponding erasing instruction is not wiped free of, then can start pre-programmed memory block (step S206), to carry out follow-up action, such as then carry out the step such as erasing memory block (step S208) and rear programmed memory block (step S210), then enter standby condition or tenth skill (step S212) again.On the contrary, if the memory block of corresponding erasing instruction is wiped free of, then the memory block of corresponding erasing instruction can be made directly to enter standby condition or tenth skill (step S212).Wherein standby condition can such as sequencing standby condition, waiting receive programmed instructions after, then according to programmed instructions, the memory block entering sequencing standby condition is carried out to the sequencing of memory block.
In sum, whether the present invention was wiped free of by first detecting memory block before wiping memory block, just carried out the action of follow-up pre-programmed when memory block is not wiped free of.So can avoid carrying out unnecessary sequencing and erasing move to memory cell, thus can extend the serviceable life of flash memory device, reduce power attenuation, and improve the efficiency of erasing storer.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.The technical staff in the technical field of the invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on the appended claim person of defining.
Claims (8)
1. a flash memory device, comprising:
One memory cell, comprises multiple memory block;
One sensing amplifier, couples this memory cell, senses and amplifies the data stored by this memory cell; And
Whether one control module, couples this memory cell and this sensing amplifier, detect should the memory block of erasing instruction be wiped free of according to an erasing instruction, if to the memory block of erasing instruction should not being wiped free of just this memory block of pre-programmed.
2. flash memory device as claimed in claim 1, whether wherein this control module also reads should the memory block of erasing instruction, to judge should the memory block of erasing instruction be wiped free of.
3. flash memory device as claimed in claim 2, wherein this control module is the mode that reads with order to reading the memory block of erasing instruction.
4. flash memory device as claimed in claim 1, if this control module detects should the memory block of erasing instruction be wiped free of, this control module makes the memory block of erasing instruction entering a standby condition or tenth skill.
5. a method for deleting for flash memory device, comprising:
Receive an erasing instruction;
Detect should the memory block of erasing instruction whether be wiped free of according to this erasing instruction; And
If to should the memory block of erasing instruction not be wiped free of, this memory block of pre-programmed.
6. the method for deleting of flash memory device as claimed in claim 5, wherein detects should the step that whether has been wiped free of of the memory block of erasing instruction comprise:
Read should the memory block of erasing instruction; And
According to should the reading result of memory block of erasing instruction judge should the memory block of erasing instruction whether be wiped free of.
7. the method for deleting of flash memory device as claimed in claim 6, wherein to should the reading manner of memory block of erasing instruction be read in the mode of order read-write.
8. the method for deleting of flash memory device as claimed in claim 5, if to should the memory block of erasing instruction be wiped free of, makes the memory block of erasing instruction entering standby condition or tenth skill.
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| CN201410022779.7A CN104795104B (en) | 2014-01-17 | 2014-01-17 | Flash memory device and its method for deleting |
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| CN201410022779.7A CN104795104B (en) | 2014-01-17 | 2014-01-17 | Flash memory device and its method for deleting |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113448496A (en) * | 2020-03-25 | 2021-09-28 | 旺宏电子股份有限公司 | Erasing method of multi-layer three-dimensional memory |
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| CN101178937A (en) * | 2006-11-06 | 2008-05-14 | 海力士半导体有限公司 | Flash memory device and method for controlling the same |
| US20090244980A1 (en) * | 2008-03-25 | 2009-10-01 | Samsung Electronics Co., Ltd. | Method for reducing lateral movement of charges and memory device thereof |
| US20110063917A1 (en) * | 2009-09-16 | 2011-03-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
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| US7079424B1 (en) * | 2004-09-22 | 2006-07-18 | Spansion L.L.C. | Methods and systems for reducing erase times in flash memory devices |
| CN101178937A (en) * | 2006-11-06 | 2008-05-14 | 海力士半导体有限公司 | Flash memory device and method for controlling the same |
| US20090244980A1 (en) * | 2008-03-25 | 2009-10-01 | Samsung Electronics Co., Ltd. | Method for reducing lateral movement of charges and memory device thereof |
| US20110063917A1 (en) * | 2009-09-16 | 2011-03-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113448496A (en) * | 2020-03-25 | 2021-09-28 | 旺宏电子股份有限公司 | Erasing method of multi-layer three-dimensional memory |
| CN113448496B (en) * | 2020-03-25 | 2024-05-28 | 旺宏电子股份有限公司 | Erasing method of multi-level three-dimensional memory |
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| CN104795104B (en) | 2018-07-06 |
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