CN104787765A - Method for preparing super-long SiC nanowire from inorganic powder - Google Patents
Method for preparing super-long SiC nanowire from inorganic powder Download PDFInfo
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Abstract
The invention provides a method for preparing a super-long SiC nanowire from inorganic powder, relates to a preparation method of the super-long SiC nanowire, and aims to solve the technical problems such as high equipment requirements, complex operation process, low safety and high cost of the conventional method for preparing the super-long SiC nanowire. The method provided by the invention comprises the following steps: (1) taking raw materials and catalysts proportionally; (2) mechanically mixing the powder bodies, and putting the mixture into a porcelain square ship; (3) pushing the porcelain square ship to the center of a pipe furnace, and carrying out heating and cooling under the protection of argon gas and a normal pressure condition according to a certain procedure, so as to obtain the super-long SiC nanowire. The method provided by the invention has the advantages that the equipment requirements are low, the operation process is simple, the safety factor is high, and the production cost is low. The SiC nanowire not only can be used for preparation of nano electronic components such as light emitting diodes and laser diodes, but also can serve as a reinforced-phase material of composite materials such as metal-based composite materials, ceramic-based composite materials and polymer. The method provided by the invention belongs to the field of nanowire preparation.
Description
Technical field
The present invention relates to a kind of with carbon black, silica flour and silicon-dioxide for the method for ultralong SiC nanowires prepared by raw material.The method equipment requirements is low, safety coefficient is high, preparation technology is simple, cost is low.
Background technology
Relevant report according to early stage is known, one dimension SiC nano material has excellent mechanical property, special optical property, excellent field emission characteristic, also there is the radar-wave absorbing performance that the efficient photochemical catalysis of storage hydrogen is become reconciled simultaneously, have boundless application prospect in fields such as composite material reinforcement body, nanometer components and parts, energy storage photochemical catalysis and stealth materials.
One dimension SiC nano material has multiple preparation method, five classes can be divided into: (1) carbon nanotube template based on different starting material and technique its preparation method, (2) chemical Vapor deposition process, (3) laser ablation and arc discharge method, (4) Low Temperature Solid-Phase diffusion growth method, (5) sol-gel and carbothermic method.But these method ubiquity complex process, wayward, cost is higher, and only can synthesize and prepare the one dimension SiC nano material that length is tens to hundred microns, relative to the nano material of these microscopic dimensions, the application prospect more Worth Expecting of overlength (reach several millimeters or even centimetre) SiC nanowire, it not only as research microcosmic and macroscopical connection bridge, and can be able to directly apply in nanoelectronic components and parts.
But the report prepared about ultralong SiC nanowires is at present less, the Chinese patent " application number is 201010193671.6 " of 2010 disclose a kind of with expanded graphite and silica flour or silicon-dioxide powdery for raw material is to prepare the method for ultralong SiC nanowires.Specific practice is: adopt industrial expansible black lead to be carbon source; with silica flour or silicon dioxide powder for silicon source; above powder is loaded plumbago crucible and is placed in high-temperature atmosphere furnace; vacuumize rear applying argon gas as protection gas; then 1300 ~ 1700 DEG C are warming up to; insulation 1 ~ 8h; result can obtain the ultralong SiC nanowires reaching several millimeters under condition of negative pressure; need in the method to vacuumize equipment, and the overlong nanowire of several millimeters can be prepared under needing to be incubated long period and higher temperature of reaction under condition of negative pressure." application number is 201010154550.0 " disclose a kind of with the mixed powder of carbonaceous gas and silicon monoxide powder or silicon and silicon oxide for raw material is to prepare the method for ultralong SiC nanowires.Specific practice is: adopt carbonaceous gas methane to be carbon source; with silicon monoxide or silicon and silicon oxide for silicon source; above powder is placed in vacuum tube furnace or chemical vapor deposition stove; vacuumize rear applying argon gas or nitrogen as protection gas; then 1350 ~ 1600 DEG C are warming up to; insulation 1 ~ 6h; result can obtain and reach several millimeters of ultralong SiC nanowires even centimetre under 1.1 ~ 1.5atm condition; relate to inflammable gas methane in the method, and can overlong nanowire be prepared under needing to be incubated long period and higher temperature of reaction under an increased pressure.Adopt ultralong SiC nanowires ubiquity two subject matters prepared by aforesaid method: (1) experiment condition is harsher and safety coefficient is low; (2) experiment to the requirement of equipment higher and technique relative complex, be unfavorable for that experimental implementation controls.Ultralong SiC nanowires prepared by the present invention take carbon black as carbon source, and silica flour and silicon-dioxide are silicon source, has that cost is low, technique is simple, safety coefficient is high and the advantage such as equipment requirements is low, is expected to realize scale operation.
Summary of the invention
The object of the invention is to prepare the technical problems such as ultralong SiC nanowires equipment requirements is high, security is low, operating process is complicated to solve existing method, providing a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires.
A kind of method utilizing inorganic powder to prepare ultralong SiC nanowires of the present invention, it carries out according to following steps:
One, be 1:(1 ~ 3 according to the mol ratio of silicon-carbon) ratio take raw material, then take catalyzer with 10 ~ 30% of element silicon massfraction; Wherein, described raw material is carbon black, silica flour and silicon-dioxide, and described silica flour is equal with the mole number of silicon-dioxide;
Two, raw material step one taken and catalyzer with 100 ~ 300r/min rotating speed mechanically mixing 10min, obtain the carbon black-silicon-silicon-dioxide experiment powder containing catalyzer in mixing tank;
Three, the carbon black-silicon containing catalyzer step 2 obtained-silicon-dioxide experiment powder loads in porcelain Noah's ark, is pushed in tube furnace, then under argon shield, condition of normal pressure, rises to 200 DEG C with the heat-up rate of 5 DEG C/min, insulation 20min by porcelain Noah's ark; 800 DEG C are risen to the heat-up rate of 10 DEG C/min again, insulation 120min under argon shield, condition of normal pressure; 1250 ~ 1450 DEG C are risen to the heat-up rate of 5 DEG C/min again, insulation 1 ~ 4h under argon shield, condition of normal pressure; 700 DEG C are down to the cooling rate of 5 DEG C/min again under argon shield, condition of normal pressure; and then room temperature is down to the cooling rate of 10 DEG C/min under argon shield, condition of normal pressure; namely obtain ultralong SiC nanowires at porcelain Noah's ark wall or powder surface, complete the described inorganic powder that utilizes and prepare ultralong SiC nanowires.
The present invention comprises following beneficial effect:
Overlong nanowire diameter Distribution prepared by the present invention is even, and mainly exists with linearity.
Product prepared by the present invention mainly comprises silicon, carbon, oxygen and a small amount of catalyst alloy element aluminum.
The present invention mainly with carbon black, silica flour and silicon-dioxide for raw material, just prepared in atmospheric conditions reach several millimeters or even centimetre ultralong SiC nanowires.Operating process is simple, safety coefficient is high, cost and equipment requirements low.This nano wire is not only expected to be applied to the fields such as nanoelectronic components and parts and Flied emission such as photodiode, simultaneously can also as the wild phase material of the matrix materials such as metal matrix.
Accompanying drawing explanation
Fig. 1 is the scanning electron microscope (SEM) photograph of the SiC nanowire of experiment preparation;
Fig. 2 is the energy spectrum analysis figure of the SiC nanowire of experiment preparation.
Embodiment
Technical solution of the present invention is not limited to following cited embodiment, also comprises the arbitrary combination between each embodiment.
Embodiment one: a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires of present embodiment, it carries out according to following steps:
One, be 1:(1 ~ 3 according to the mol ratio of silicon-carbon) ratio take raw material, then take catalyzer with 10 ~ 30% of element silicon massfraction; Wherein, described raw material is carbon black, silica flour and silicon-dioxide, and described silica flour is equal with the mole number of silicon-dioxide;
Two, raw material step one taken and catalyzer with 100 ~ 300r/min rotating speed mechanically mixing 10min, obtain the carbon black-silicon-silicon-dioxide experiment powder containing catalyzer in mixing tank;
Three, the carbon black-silicon containing catalyzer step 2 obtained-silicon-dioxide experiment powder loads in porcelain Noah's ark, is pushed in tube furnace, then under argon shield, condition of normal pressure, rises to 200 DEG C with the heat-up rate of 5 DEG C/min, insulation 20min by porcelain Noah's ark; 800 DEG C are risen to the heat-up rate of 10 DEG C/min again, insulation 120min under argon shield, condition of normal pressure; 1250 ~ 1450 DEG C are risen to the heat-up rate of 5 DEG C/min again, insulation 1 ~ 4h under argon shield, condition of normal pressure; 700 DEG C are down to the cooling rate of 5 DEG C/min again under argon shield, condition of normal pressure; and then room temperature is down to the cooling rate of 10 DEG C/min under argon shield, condition of normal pressure; namely obtain ultralong SiC nanowires at porcelain Noah's ark wall or powder surface, complete the described inorganic powder that utilizes and prepare ultralong SiC nanowires.
Through dehydrated alcohol wiping and seasoning before porcelain Noah's ark used in present embodiment step 3 uses.
Embodiment two: present embodiment and embodiment one unlike: the catalyzer described in step one is aluminum oxide, iron nitrate or nickelous nitrate.Other is identical with embodiment one.
Embodiment two: one of present embodiment and embodiment one to two unlike: the material of the mixing tank described in step 2 is agate or SiC.Other is identical with one of embodiment one to two.
Embodiment four: one of present embodiment and embodiment one to three unlike: in step 3, the flow velocity of argon gas is: be pushed into after in tube furnace by porcelain Noah's ark, it is 300 ~ 500ml/min that intensification starts argon gas flow velocity in half an hour, after half an hour, coutroi velocity remains on 100 ~ 200ml/min, after temperature reaches 800 DEG C, flow velocity is adjusted to 400ml/min, until temperature is down to room temperature, close argon gas.Other is identical with one of embodiment one to three.
Embodiment five: one of present embodiment and embodiment one to four unlike: the ratio being 1:2 according to the mol ratio of silicon-carbon takes raw material, then takes catalyzer with 15% of element silicon massfraction; Wherein, described raw material is carbon black, silica flour and silicon-dioxide, and described silica flour is equal with the mole number of silicon-dioxide.Other is identical with one of embodiment one to four.
Embodiment six: one of present embodiment and embodiment one to five unlike: under argon shield, condition of normal pressure, keep the temperature 2h of 1250 DEG C in step 3.Other is identical with one of embodiment one to five.
Embodiment seven: one of present embodiment and embodiment one to six unlike: under argon shield, condition of normal pressure, keep the temperature 2h of 1300 DEG C in step 3.Other is identical with one of embodiment one to six.
Embodiment eight: one of present embodiment and embodiment one to seven unlike: under argon shield, condition of normal pressure, keep the temperature 2h of 1350 DEG C in step 3.Other is identical with one of embodiment one to seven.
Embodiment nine: one of present embodiment and embodiment one to eight unlike: under argon shield, condition of normal pressure, keep the temperature 2h of 1400 DEG C in step 3.Other is identical with one of embodiment one to eight.
Embodiment ten: one of present embodiment and embodiment one to nine unlike: under argon shield, condition of normal pressure, keep the temperature 2h of 1450 DEG C in step 3.Other is identical with one of embodiment one to nine.
By following experimental verification effect of the present invention:
Experiment one:
A kind of method utilizing inorganic powder to prepare ultralong SiC nanowires:
One, take raw material and catalyzer in proportion: convert out the mass ratio (wherein silicon is equal with silicon-dioxide mole number) of required carbon black, silica flour and silicon-dioxide according to the mol ratio of carbon silicon 1:1 and weigh, then weigh catalyzer with 30% of element silicon massfraction;
Two, raw material step one taken and catalyzer with 100r/min rotating speed mechanically mixing 10min, obtain the homogeneous carbon black-silicon containing catalyzer of color-silicon-dioxide experiment powder in mixing tank;
Three, the carbon black-silicon containing catalyzer step 2 obtained-silicon-dioxide experiment powder loads in porcelain Noah's ark, is pushed in tube furnace, then under argon shield, condition of normal pressure, rises to 200 DEG C with the heat-up rate of 5 DEG C/min, insulation 20min by porcelain Noah's ark; 800 DEG C are risen to the heat-up rate of 10 DEG C/min again, insulation 120min under argon shield, condition of normal pressure; 1250 DEG C are risen to the heat-up rate of 5 DEG C/min again, insulation 2h under argon shield, condition of normal pressure; 700 DEG C are down to the cooling rate of 5 DEG C/min again under argon shield, condition of normal pressure; and then room temperature is down to the cooling rate of 10 DEG C/min under argon shield, condition of normal pressure; namely obtain ultralong SiC nanowires at porcelain Noah's ark wall or powder surface, obtain ultralong SiC nanowires.
Catalyzer described in step one is aluminum oxide.
The material of the mixing tank described in step 2 is agate.
The process of argon shield of flowing in step 3 is as follows:
Argon gas flow velocity starts in half an hour be 500mL/min in intensification, and after rising above half an hour, flow velocity is 200mL/min, when heating up from 800 DEG C, flow velocity is adjusted to 400mL/min, until after temperature is down to room temperature, and closedown argon gas.
Experiment two:
A kind of method utilizing inorganic powder to prepare ultralong SiC nanowires:
One, take raw material and catalyzer in proportion: convert out the mass ratio (wherein silicon is equal with silicon-dioxide mole number) of required carbon black, silica flour and silicon-dioxide according to the mol ratio of carbon silicon 1.5:1 and weigh, then weigh catalyzer with 30% of element silicon massfraction;
Two, raw material step one taken and catalyzer with 150r/min rotating speed mechanically mixing 10min, obtain the homogeneous carbon black-silicon containing catalyzer of color-silicon-dioxide experiment powder in mixing tank;
Three, the carbon black-silicon containing catalyzer step 2 obtained-silicon-dioxide experiment powder loads in porcelain Noah's ark, is pushed in tube furnace, then under argon shield, condition of normal pressure, rises to 200 DEG C with the heat-up rate of 5 DEG C/min, insulation 20min by porcelain Noah's ark; 800 DEG C are risen to the heat-up rate of 10 DEG C/min again, insulation 120min under argon shield, condition of normal pressure; 1300 DEG C are risen to the heat-up rate of 5 DEG C/min again, insulation 2h under argon shield, condition of normal pressure; 700 DEG C are down to the cooling rate of 5 DEG C/min again under argon shield, condition of normal pressure; and then room temperature is down to the cooling rate of 10 DEG C/min under argon shield, condition of normal pressure; namely obtain ultralong SiC nanowires at porcelain Noah's ark wall or powder surface, obtain ultralong SiC nanowires.
Catalyzer described in step one is iron nitrate.
The material of the mixing tank described in step 2 is agate.
The process of argon shield of flowing in step 3 is as follows:
Argon gas flow velocity starts in half an hour be 500mL/min in intensification, and after rising above half an hour, flow velocity is 200mL/min, when heating up from 800 DEG C, flow velocity is adjusted to 400mL/min, until after temperature is down to room temperature, and closedown argon gas.
Experiment three:
A kind of method utilizing inorganic powder to prepare ultralong SiC nanowires:
One, take raw material and catalyzer in proportion: convert out the mass ratio (wherein silicon is equal with silicon-dioxide mole number) of required carbon black, silica flour and silicon-dioxide according to the mol ratio of carbon silicon 2:1 and weigh, then weigh catalyzer with 30% of element silicon massfraction;
Two, raw material step one taken and catalyzer with 200r/min rotating speed mechanically mixing 10min, obtain the homogeneous carbon black-silicon containing catalyzer of color-silicon-dioxide experiment powder in mixing tank;
Three, the carbon black-silicon containing catalyzer step 2 obtained-silicon-dioxide experiment powder loads in porcelain Noah's ark, is pushed in tube furnace, then under argon shield, condition of normal pressure, rises to 200 DEG C with the heat-up rate of 5 DEG C/min, insulation 20min by porcelain Noah's ark; 800 DEG C are risen to the heat-up rate of 10 DEG C/min again, insulation 120min under argon shield, condition of normal pressure; 1350 DEG C are risen to the heat-up rate of 5 DEG C/min again, insulation 2h under argon shield, condition of normal pressure; 700 DEG C are down to the cooling rate of 5 DEG C/min again under argon shield, condition of normal pressure; and then room temperature is down to the cooling rate of 10 DEG C/min under argon shield, condition of normal pressure; namely obtain ultralong SiC nanowires at porcelain Noah's ark wall or powder surface, obtain ultralong SiC nanowires.
Catalyzer nickelous nitrate described in step one.
The material of the mixing tank described in step 2 is SiC.
The process of argon shield of flowing in step 3 is as follows:
Argon gas flow velocity starts in half an hour be 500mL/min in intensification, and after rising above half an hour, flow velocity is 200mL/min, when heating up from 800 DEG C, flow velocity is adjusted to 400mL/min, until after temperature is down to room temperature, and closedown argon gas.
Experiment four:
A kind of method utilizing inorganic powder to prepare ultralong SiC nanowires:
One, take raw material and catalyzer in proportion: convert out the mass ratio (wherein silicon is equal with silicon-dioxide mole number) of required carbon black, silica flour and silicon-dioxide according to the mol ratio of carbon silicon 3:1 and weigh, then weigh catalyzer with 30% of element silicon massfraction;
Two, raw material step one taken and catalyzer with 300r/min rotating speed mechanically mixing 10min, obtain the homogeneous carbon black-silicon containing catalyzer of color-silicon-dioxide experiment powder in mixing tank;
Three, the carbon black-silicon containing catalyzer step 2 obtained-silicon-dioxide experiment powder loads in porcelain Noah's ark, is pushed in tube furnace, then under argon shield, condition of normal pressure, rises to 200 DEG C with the heat-up rate of 5 DEG C/min, insulation 20min by porcelain Noah's ark; 800 DEG C are risen to the heat-up rate of 10 DEG C/min again, insulation 120min under argon shield, condition of normal pressure; 1400 DEG C are risen to the heat-up rate of 5 DEG C/min again, insulation 2h under argon shield, condition of normal pressure; 700 DEG C are down to the cooling rate of 5 DEG C/min again under argon shield, condition of normal pressure; and then room temperature is down to the cooling rate of 10 DEG C/min under argon shield, condition of normal pressure; namely obtain ultralong SiC nanowires at porcelain Noah's ark wall or powder surface, obtain ultralong SiC nanowires.
Catalyzer described in step one is aluminum oxide.
The material of the mixing tank described in step 2 is SiC.
The process of argon shield of flowing in step 3 is as follows:
Argon gas flow velocity starts in half an hour be 500mL/min in intensification, and after rising above half an hour, flow velocity is 200mL/min, when heating up from 800 DEG C, flow velocity is adjusted to 400mL/min, until after temperature is down to room temperature, and closedown argon gas.
As shown in Figure 1, can find out that the overlong nanowire purity prepared by this experiment is very high, diameter Distribution even, and product mainly exists with linearity.
As shown in Figure 2, the result according to energy spectrum analysis shows, the product prepared by this experiment mainly comprises silicon, carbon, oxygen and a small amount of catalyst alloy element aluminum.
Claims (10)
1. utilize inorganic powder to prepare a method for ultralong SiC nanowires, it is characterized in that it carries out according to following steps:
One, the ratio being 1 ﹕ (1 ~ 3) according to the mol ratio of silicon-carbon takes raw material, then takes catalyzer with 10 ~ 30% of element silicon massfraction; Wherein, described raw material is carbon black, silica flour and silicon-dioxide, and described silica flour is equal with the mole number of silicon-dioxide;
Two, raw material step one taken and catalyzer with 100 ~ 300r/min rotating speed mechanically mixing 10min, obtain the carbon black-silicon-silicon-dioxide experiment powder containing catalyzer in mixing tank;
Three, the carbon black-silicon containing catalyzer step 2 obtained-silicon-dioxide experiment powder loads in porcelain Noah's ark, is pushed in tube furnace, then under argon shield, condition of normal pressure, rises to 200 DEG C with the heat-up rate of 5 DEG C/min, insulation 20min by porcelain Noah's ark; 800 DEG C are risen to the heat-up rate of 10 DEG C/min again, insulation 120min under argon shield, condition of normal pressure; 1250 ~ 1450 DEG C are risen to the heat-up rate of 5 DEG C/min again, insulation 1 ~ 4h under argon shield, condition of normal pressure; 700 DEG C are down to the cooling rate of 5 DEG C/min again under argon shield, condition of normal pressure; and then room temperature is down to the cooling rate of 10 DEG C/min under argon shield, condition of normal pressure; namely obtain ultralong SiC nanowires at porcelain Noah's ark wall or powder surface, complete the described inorganic powder that utilizes and prepare ultralong SiC nanowires.
2. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 1, is characterized in that the catalyzer described in step one is aluminum oxide, iron nitrate or nickelous nitrate.
3. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 1, is characterized in that the material of the mixing tank described in step 2 is agate or SiC.
4. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 1, it is characterized in that the flow velocity of argon gas in step 3 is: be pushed into after in tube furnace by porcelain Noah's ark, it is 300 ~ 500ml/min that intensification starts argon gas flow velocity in half an hour, after half an hour, coutroi velocity remains on 100 ~ 200ml/min, after temperature reaches 800 DEG C, flow velocity is adjusted to 400ml/min, until temperature is down to room temperature, closes argon gas.
5. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 1, is characterized in that the ratio being 1 ﹕ 2 according to the mol ratio of silicon-carbon in step one takes raw material, then takes catalyzer with 15% of element silicon massfraction; Wherein, described raw material is carbon black, silica flour and silicon-dioxide, and described silica flour is equal with the mole number of silicon-dioxide.
6. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 1, is characterized in that the temperature 2h keeping 1250 DEG C in step 3 under argon shield, condition of normal pressure.
7. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 6, is characterized in that the temperature 2h keeping 1300 DEG C in step 3 under argon shield, condition of normal pressure.
8. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 7, is characterized in that the temperature 2h keeping 1350 DEG C in step 3 under argon shield, condition of normal pressure.
9. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 8, is characterized in that the temperature 2h keeping 1400 DEG C in step 3 under argon shield, condition of normal pressure.
10. a kind of method utilizing inorganic powder to prepare ultralong SiC nanowires according to claim 9, is characterized in that the temperature 2h keeping 1450 DEG C in step 3 under argon shield, condition of normal pressure.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115716759A (en) * | 2022-10-26 | 2023-02-28 | 南京工业大学 | Porous SiC nanowire film with high flexibility and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101812730A (en) * | 2010-04-23 | 2010-08-25 | 中南大学 | Preparation method of ultralong monocrystal beta-SiC nanowire metal-free catalyst |
| CN101850971A (en) * | 2010-06-04 | 2010-10-06 | 浙江理工大学 | Method for preparing high-yield SiC nanowire |
| CN104445200A (en) * | 2014-11-17 | 2015-03-25 | 哈尔滨工业大学 | Method for preparing super-long silicon carbide nano-wires |
-
2015
- 2015-04-15 CN CN201510178022.1A patent/CN104787765A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101812730A (en) * | 2010-04-23 | 2010-08-25 | 中南大学 | Preparation method of ultralong monocrystal beta-SiC nanowire metal-free catalyst |
| CN101850971A (en) * | 2010-06-04 | 2010-10-06 | 浙江理工大学 | Method for preparing high-yield SiC nanowire |
| CN104445200A (en) * | 2014-11-17 | 2015-03-25 | 哈尔滨工业大学 | Method for preparing super-long silicon carbide nano-wires |
Non-Patent Citations (2)
| Title |
|---|
| GONG-YI LI ET AL.: "Large Areas of Centimeters-Long SiC Nanowires Synthesized by Pyrolysis of a Polymer Precursor by a CVD Route", 《J.PHYS.CHEM.C》 * |
| 董顺: "SiC纳米线的制备和微结构控制及激励研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115716759A (en) * | 2022-10-26 | 2023-02-28 | 南京工业大学 | Porous SiC nanowire film with high flexibility and preparation method thereof |
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