CN104781920A - Bonding wire for semiconductor device and manufacturing method therefor - Google Patents

Bonding wire for semiconductor device and manufacturing method therefor Download PDF

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Publication number
CN104781920A
CN104781920A CN201380057629.3A CN201380057629A CN104781920A CN 104781920 A CN104781920 A CN 104781920A CN 201380057629 A CN201380057629 A CN 201380057629A CN 104781920 A CN104781920 A CN 104781920A
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CN
China
Prior art keywords
coating
metal
closing line
core material
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380057629.3A
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Chinese (zh)
Inventor
金相烨
文晶琸
洪性在
金承贤
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MK Electron Co Ltd
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MK Electron Co Ltd
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Filing date
Publication date
Application filed by MK Electron Co Ltd filed Critical MK Electron Co Ltd
Publication of CN104781920A publication Critical patent/CN104781920A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B23K35/0238—Sheets, foils layered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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    • B23K35/302—Cu as the principal constituent
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/40—Making wire or rods for soldering or welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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  • Engineering & Computer Science (AREA)
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  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

The present invention relates to a bonding wire for a semiconductor device and a manufacturing method therefor and, more particularly, to a method for manufacturing a bonding wire for a semiconductor device, comprising the steps of: forming a first coating layer having a second metal as a main component on a core material having a first metal as a main component; wire-drawing the core material on which the first coating layer is formed; and forming a second coating layer having a third metal as a main component on the core material and the first coating layer for which the wire drawing has been completed. When a bonding wire and a manufacturing method therefor of the present invention are used, damage to a chip can be reduced while preventing the exposure of the core material, and the acid resistance and bonding properties of a second side can be improved.

Description

Semiconductor device closing line and manufacture method thereof
Technical field
Design of the present invention relates to semiconductor device closing line and manufacture method thereof, and more specifically relate to semiconductor device closing line and manufacture method thereof, the infringement to chip can be reduced, prevent core material from exposing simultaneously, and improve acid resistance and the zygosity at the second side place.
Background technology
Various structures is there is in for the packaging part of mounting semiconductor.Closing line is widely used in connection substrate with semiconductor device or be connected multiple semiconductor device.Widely use golden closing line as closing line.But, because high and its price of golden closing line price escalates recently, to the increase in demand of closing line that can replace golden closing line.
In order to replace golden closing line, much research and effort are completed.Copper (Cu) closing line has been given very high expectation.Because the surface of individual layer Cu closing line is easily oxidized in atmosphere, may be deteriorated to the zygosity of pad or lead-in wire.In order to solve this problem, propose the multi-layer C u closing line that the surface by covering individual layer Cu closing line with another kind of metal obtains.
When forming dissimilar metal and carry out repeatedly bracing wire so that when manufacturing multi-layer C u closing line in Cu core material, dissimilar metal may cancellation thus Cu core material may be made to expose.When making Cu core material expose, the problem identical with the problem of individual layer Cu closing line may be there is.Therefore, when by this multi-layer C u bondwire applications in semiconductor device time, may defect be there is.
In addition, the zygosity improving multi-layer C u closing line and pad or lead-in wire is needed.
Inventive concept is described in detail
Technical problem
Design of the present invention provides the manufacture method of semiconductor device closing line, and it can reduce the infringement to chip, prevents core material from exposing simultaneously, and improves acid resistance and the zygosity at the second side place.
Design of the present invention also provides semiconductor device closing line, and it can reduce the infringement to chip, prevents core material from exposing simultaneously, and improves acid resistance and the zygosity at the second side place.
Technical scheme
According to an aspect of design of the present invention, provide a kind of manufacture method of semiconductor device closing line, described manufacture method comprises: have the first metal as in the core material of key component formed there is first coating of the second metal as key component; Bracing wire is carried out to the described core material defining described first coating thereon; And after described bracing wire in described core material and described first coating formed there is second coating of the 3rd metal as key component.
Here, described first metal is Cu, Ag or their alloy, and described second metal is Au, Ag, Pt, Pd or their alloy, and described 3rd metal is Au, Ag, Pt, Pd or their alloy.Described first metal can be different from described second metal.
The bracing wire of no more than twice can be carried out after the formation of described second coating.Bracing wire can not be carried out after the formation of described second coating.
Described manufacture method can also be included in the formation of described second coating after by the surface roughening of described second coating.Now, the described roughening on the surface of described second coating can comprise the second coating described in plasma treatment.The surface of described second coating can have the roughness of about 1nm to about 6nm.
According to another aspect of design of the present invention, provide a kind of semiconductor device closing line, described closing line comprises: core material, and described core material has the first metal as key component; First coating, described first coating formation on the surface of described core material, and has the second metal as key component, described bimetallic component and composition and the component of described first metal with form different; With the second coating, described second coating surrounds described core material and described first coating, and has the 3rd metal as key component, the component of described 3rd metal and composition and described bimetallic component with form different.
Here, described first metal is Cu, Ag or their alloy, described second metal is Au, Ag, Pt, Pd or their alloy, and described 3rd metal is Au, Ag, Pt, Pd or their alloy, and the surface of described second coating has the roughness of about 1nm to about 6nm.
Now, the thickness of the combination of described first coating and described second coating can be about 30nm to about 100nm.The thickness of described first coating can be about 25nm to about 85nm.
The cross-sectional area of the combination of described first coating and described second coating can be about 0.597% of the cross-sectional area of described closing line to about 1.97%.The cross-sectional area of the combination of described first coating and described second coating can be about 0.993% of the cross-sectional area of described closing line to about 1.97%.The cross-sectional area of the combination of described first coating and described second coating can be about 1.189% of the cross-sectional area of described closing line to about 1.581%.
According to another aspect of design of the present invention, provide a kind of semiconductor device closing line, described closing line comprises: core material, and described core material has the first metal as key component; And coating, described coating formation on the surface of described core material, and has the second metal as key component, described bimetallic component and composition and the component of described first metal with form different.The surface of described coating has the roughness of about 1nm to about 6nm.
Here, described first metal can be Cu, Ag or their alloy, and described second metal can be Au, Ag, Pt, Pd or their alloy.
Beneficial effect
By use according to the closing line of design of the present invention and manufacture method thereof, the infringement to chip can be reduced, prevent core material from exposing simultaneously, and improve acid resistance and the zygosity at the second side place.
Accompanying drawing describes
Fig. 1 and 2 is the concept map of the cross section of the closing line of the exemplary illustrated according to design of the present invention; And
Fig. 3 is the flow chart of the manufacture method of the closing line of the exemplary illustrated in order according to design of the present invention.
Best mode
Now with reference to accompanying drawing, design of the present invention is more completely described, the exemplary of design of the present invention shown in the drawings.Element identical in accompanying drawing is represented by identical Reference numeral, and will not provide the explanation of their repetition.But design of the present invention can be implemented in many different forms, and should not be construed as limited to the exemplary provided in this article.On the contrary, these embodiments be provided thus make the disclosure be abundant and complete, and fully passing on the scope of design of the present invention to those of ordinary skill in the art.
Although it should be understood that and term first and second grade can be used in this article to describe multiple element, these elements should not be limited to these terms.These terms are only for distinguishing an element and another element.Such as, by the first element called after second element, and similarly, by the second element called after first element, and the scope of design of the present invention can not deviated from.
Unless otherwise defined, singular references can represent plural term.The term that can use in multiple embodiments of design of the present invention represents the corresponding function disclosed in existing, operation or element as " comprising " or " can comprise " and does not limit one or more extra functions, operation or element.Unless otherwise defined, exist for represent describe in specification feature, quantity, step, operation, element and part or more the term of combination as " comprising " and " having ".Accountable, the combination of one or more other features, quantity, step, operation, element and part or more can be increased.
Unless otherwise defined, the whole terms (comprising technology and scientific terminology) used in this article have and the identical implication conceived one skilled in the art and usually understand of the present invention.
Fig. 1 is the concept map of the cross section of the semiconductor device closing line of the exemplary illustrated according to design of the present invention.
With reference to Fig. 1, three layers can be comprised according to the semiconductor device closing line 100 of the exemplary of design of the present invention, namely there is the core material 110 of the first metal as key component, the surface being formed in core material 110 has first coating 120 of the second metal as key component, and to surround the first coating 120 and core material 110 and there is second coating 130 of the 3rd metal as key component.
Here, the concentration that " key component " means respective metal is not less than 50 % by mole.
First metal can be the alloy of Cu, silver (Ag) or more.Second metal and the 3rd metal can be the alloy of Au, Ag, platinum (Pt), palladium (Pd) or more at least two independently.In addition, the first metal has the component different from bimetallic component or composition or composition.Second metal can have from the component of the 3rd metal with form identical component and composition or with the component of the 3rd metal with form different components and composition.When the second metal has with the component of the 3rd metal with when forming identical component and form, can interface between uncertain first coating 120 and the second coating 130.In this case, the first coating 120 and the second coating 130 are called as coating 140.
First coating 120 can surround core material 110 completely, or can partly there is the part of not surrounding core material 110.Fig. 2 is the concept map of the cross section that closing line 100a is described, wherein part exists the part that the first coating 120 does not surround core material 110.With reference to Fig. 2, the first coating 120 does not cover the whole periphery of core material 110 and core material 110 part is exposed to the outside of the first coating 120.But, because covered the expose portion of core material 110 by the second coating 130, core material 110 can be prevented to be oxidized in atmosphere and to prevent oxidation film.
Can be about 30nm to about 100nm at the thickness of first coating 120 at the arbitrfary point place on the surface of core material 110 and the combination of the second coating 130.When the thickness of the combination of the first coating 120 and the second coating 130 is too little, the zygosity of carrying out the second side place of stitch bonding (stitch bonding) thereon may be deteriorated.In addition, when the thickness of the combination of the first coating 120 and the second coating 130 is too large, ball bonding portion may be damaged.Here, " the second side " refers to the side being connected to closing line after a while between two terminals being connected to closing line, and is usually connected with closing line by stitch welding method.
Especially, the thickness of the first coating 120 can be about 25nm to about 85nm.When the first coating 120 in uneven thickness, the thickness of thick can be about 25nm to about 85nm.When the thickness of the first coating 120 is too little, the first coating 120 from cancellation core material in bracing wire process, and may be formed after a while the second coating 130 potentially unstable.In addition, when the thickness of the first coating 120 is too large, ball bonding portion may be damaged.
Can by surface 132 roughening of the second coating 130.When by surface 132 roughening of the second coating 130, especially can improve the zygosity of the second side.By the degree of surface 132 roughening of the second coating 130, i.e. roughness can be about 1nm to about 6nm or about 1nm to about 4nm.When roughness is too little, the effect improving zygosity is very weak.On the contrary, when roughness is too large, the second coating 130 is damaged, thus the first coating 120 or core material 110 may be made to expose.
As mentioned above, core material 110 can be the alloy of Cu, Ag or more.The characteristic of closing line can be improved by the alloying element adding trace.Such as, core material 110 can comprise with the concentration of about 0.002 % by mole to about 0.05 % by mole one or more elements being selected from the group be made up of the following: zirconium (Zr), bismuth (Bi), phosphorus (P), boron (B), iridium (Ir), tin (Sn), molybdenum (Mo) and rare earth element.
Wherein component phase counterdiffusion can be formed in around the interface that core material 110, first coating 120 of closing line 100 or 100a and the second coating 130 contact with each other wherein thus the region of concentration gradient can be formed.The diffusion layer with concentration gradient can be produced by bracing wire or heat treatment.As mentioned above, because the concentration rate that " key component " means respective metal is not less than 50 % by mole, in diffusion layer, when the concentration of the first metal is not less than 50 % by mole, think that the first metal belongs to heart yearn district, and when bimetallic concentration is not less than 50 % by mole, think that the second metal belongs to the first coating.When the concentration of the 3rd metal is not less than 50 % by mole, think that the 3rd metal belongs to the second coating.
Therefore, can determine any specific point of the cross section of closing line 100 or 100a belongs to which region of core material 110, first coating 120 and the second coating 130.In order to determine any specific point of the cross section of closing line 100 or 100a belongs to which region of core material 110, first coating 120 and the second coating 130, can well known to a person skilled in the art that any means analyzes component and the concentration of respective specific point by using.Such as, can analyze while borehole (digging) the surface of closing line 100 or 100a by sputter in the depth direction, or the line analysis that can carry out in the cross section of closing line or point analysis.
When the first coating 120 and the second coating 130 thin time, sputtering method is effective.But, when the first coating 120 and the second coating 130 thick time, Measuring Time may be long.When the first coating 120 and the second coating 130 thin time, the line analysis in the cross section of closing line or the accuracy of point analysis may be deteriorated.But, when the first coating 120 and the second coating 130 thick time, easily can check the CONCENTRATION DISTRIBUTION of whole cross section or the reproducibility in multiple part.Device for analytical concentration can use electro-probe micro analyzer (EPMA), energy dispersion X-ray analysis of spectral method (EDS), auger electron spectroscopy method (AES) and transmission electron microscope (TEM).Especially, because AES has high spatial resolution, AES is applicable to the thin region analyzing outmost surface.
Can by the thickness using said method to measure the first coating 120 and the second coating 130.In addition, the first coating 120 and the cross-sectional area of the second coating 130 and total cross-sectional area of closing line can be obtained by using the thickness measured.
The cross-sectional area of the combination of the first coating 120 and the second coating 130 can be about 0.597% of the cross-sectional area of closing line 100 or 100a to about 1.97%.Especially, the cross-sectional area of the combination of the first coating 120 and the second coating 130 can be about 0.993% of the cross-sectional area of closing line 100 or 100a to about 1.97%.Alternatively, the cross-sectional area of the combination of the first coating 120 and the second coating 130 can be about 1.189% of the cross-sectional area of closing line 100 or 100a to about 1.581%.
Fig. 3 is the flow chart of the manufacture method of the closing line of the exemplary illustrated in order according to design of the present invention.Hereinafter, with reference to Fig. 3, the manufacture method according to the closing line of the exemplary of design of the present invention is described.First, provide there is the core material of the first metal as key component.As mentioned above, the first metal can be the alloy of Cu, Ag or more.Carrying out bracing wire and/or heat treatment to having the core material of the first metal as key component, making core material have the diameter of such as about 100 μm.
Afterwards, operation S1 in, have the first metal as in the core material of key component formed there is first coating of the second metal as key component.The first coating can be formed in core material by using such as plating method, sedimentation and fusion method.Plating method can be plating or electroless plating.Plating especially can be strike plating (strike plating) or flash plating (flash plating).In plating, plating speed is high and high to the adhesiveness of bottom.Displaced type and reduced form can be divided into for electroless solution.When forming film, displaced type plating is enough.But, when forming thick film, after displaced type plating, additionally reduced form plating can be carried out.
Sedimentation can be that physical vaporous deposition is if sputtering method, ion plating method and vacuum moulding machine or chemical vapour deposition technique are as plasma enhanced chemical vapor deposition.When using sedimentation, because need not wash after formation film, do not occur by washing the pollution caused.
In fusion method, one in melting curtain coating/cast coating (the first coating and/or the second coating) or core material.Can by forming coating and manufacture closing line around core material that the coating metal curtain coating of melting is manufactured above.On the contrary, closing line can be manufactured in the heart by the hollow peripheral that core material is poured into the coating manufactured in advance.
Afterwards, in operation S2, bracing wire is carried out to the core material defining the first coating 120 thereon.Bracing wire can be carried out through multiple stage, make core material have the diameter of such as about 20 μm.Can according to circumstances need to heat-treat while carrying out bracing wire.About 0.001 second to about 5 seconds can be heat-treated at the temperature of about 400 DEG C to about 600 DEG C.In addition, only can carry out once or can more than twice heat treatment be carried out.
Owing to heat treatment, phase counterdiffusion can be there is in the interface between core material 110 and the first coating 120, thus can adhesiveness be improved.In addition, when higher than core material 110 recrystallization temperature and when heat-treating at temperature lower than the recrystallization temperature of the first coating 120, the physical characteristic of obtained closing line can be improved.
Afterwards, core material 110 and the first coating 120 form the second coating 130.As mentioned above, the component of the first coating 120 and can form identical or different with the component of the second coating 130 with composition.The thickness of the second coating 130 can be about 5nm to about 25nm.When the thickness of the second coating 130 is too little, may not the part be eliminated of full remuneration first coating while carrying out bracing wire.As a result, the zygosity possible deviation at the second side place and the sphericity possible deviation of free air balls (free air ball) by using closing line to be formed, thus may eccentric sphere be produced.In addition, when the thickness of the second coating 130 is too large, the processing characteristics possible deviation of closing line and the sphericity possible deviation of the ball formed during ball bonding.
Because can by method known concerning any person skilled in the art as plating method, sedimentation or fusion method manufacture the second coating 130, before describe these methods in detail, so it will not be provided to describe.
After formation second coating 130, can heat-treat further.Can heat-treat, make closing line have the percentage elongation of about 9%.For this purpose, about 0.001 second to about 5 seconds or about 0.05 second to about 3 seconds can be heat-treated at the temperature of about 400 DEG C to about 600 DEG C.
In addition, after formation second coating 130, can according to circumstances need to carry out bracing wire.But, when carrying out repeatedly bracing wire, because possibility cancellation second coating 130, the bracing wire of no more than twice can be carried out.After formation second coating 130, bracing wire can not be carried out.
Roughness process can be carried out to the surface of the second coating 130 formed as mentioned above.The roughness of the second coating 130 of roughening can be about 1nm to about 6nm.The roughness of the second coating 130 of roughening can be about 1nm to about 4nm.Roughness process can be carried out by such as atmospheric pressure plasma jet treatment.Can by using Ar gas or Ar+H2 admixture of gas to carry out atmospheric pressure plasma jet treatment while the power applying about 40W to about 60W.
The order of the heat treatment carried out after formation second coating 130 and roughness process is not limited, and any process can carried out before.Repeatedly heat treatment can be carried out before and after roughness process.
The mode of inventive concept
Hereinafter, structure and the effect of design of the present invention will be described in detail by exemplary and comparative example.But exemplary is used for making design of the present invention be clearly understood, instead of for limiting the scope of design of the present invention.
The manufacture > of < closing line
Preparation formed by Cu or Ag and after there is the core material of the diameter of about 100 μm, on the surface of core material, form the first metal by plating method and carry out bracing wire process thus obtain the closing line that core material wherein has the diameter of 20 μm.Afterwards, after forming the second metal by plating method on the surface of closing line, heat-treat thus make percentage elongation be about 9%.Heat-treat condition can change a little according to exemplary.About 0.001 second to about 5 seconds can be heat-treated at the temperature of about 400 DEG C to about 600 DEG C.After heat-treating, by using atmospheric plasma by the surface roughening of closing line.The power of atmospheric plasma is controlled for about 40W to about 60W, to control roughness.
The analysis > of < coating layer thickness
In order to measure the thickness of the coating on the surface of closing line, being used in and wherein carrying out by Ar ion the AES that sputters.
< acid resistance >
Closing line to be immersed in the nitric acid of 30% five minutes, to take out, and washed by deionized water.When the mass change before and after flooding is within 10% of initial engagement line mass, be defined as height (●).When the mass change before and after flooding is about 10% to about 25% of initial engagement line mass, be defined as general when the mass change before and after flooding is greater than 25% of initial engagement line mass, be defined as low (zero).
< bondwire applications test >
By using manufactured closing line, by K & S Maxum Ultra device, to carry out ball bonding/stitch bond by ultrasonic thermocompression contracting method bonding.
At shaping gas (N 2+ 5%H 2) form ball by arc discharge in the end of closing line in atmosphere, thus make closing line first be bonded to aluminium (Al) pad of 1 μm on silicon substrate, and closing line is extended and with the lead frame wedge bond of 220 DEG C by Ag or the Pd plating of 2 μm.
Bonding closing line is carried out to test and chip crater test (chip cratermg test) of the zygosity at the second side place.
chip crater
As mentioned above, by aqueous slkali by the melting of Al pad and from after bonding closing line removes Al pad, whether the silicon substrate observed on the position that there is Al pad damages.When silicon substrate does not damage, be defined as height (●).When silicon substrate damages, be defined as low (zero).
in the zygosity at the second side place
By using Dage 4000 device, stretching measurement is carried out to stitch bond.Carry out the test of the zygosity at the second side place 15 positions up and down, and obtain error rate (error rate) and Cpk value based on the value obtained.
In each exemplary, show the area ratio of the metal component of core material, the first coating and the second coating, the surface roughness of measurement, the thickness of each coating and the thickness according to each coating in Table 1.
[table 1]
In addition, in each comparative example, the area ratio of the metal component of core material, the first coating and the second coating, the surface roughness of measurement, the thickness of each coating and the thickness according to each coating is shown in table 2.
[table 2]
In each exemplary and comparative example, measure chip crater, acid resistance, zygosity at the second side place and error rate and be summarised in table 3 and 4.
[table 3]
[table 4]
With reference to above exemplary and comparative example, when the roughness on the surface of closing line is about 1nm to about 6nm, represent chip crater, acid resistance and high in the zygosity at the second side place.Especially, when the cross-sectional area of the combination of the first coating and the second coating is about 0.597% to about 1.97% of the cross-sectional area of closing line, the zygosity of the second side is higher.
Although specifically illustrate with reference to its exemplary and describe design of the present invention, it should be understood that and can make the change in various forms and details wherein and the spirit and scope not deviating from following claim.
Industrial applicibility
Design of the present invention may be used for semicon industry.

Claims (14)

1. a semiconductor device closing line, described closing line comprises:
Core material, described core material has the first metal as key component;
First coating, described first coating formation on the surface of described core material, and has the second metal as key component, described bimetallic component and composition and the component of described first metal with form different; With
Second coating, described second coating surrounds described core material and described first coating, and has the 3rd metal as key component, the component of described 3rd metal and composition and described bimetallic component with form different,
Wherein said first metal is Cu, Ag or their alloy,
Described second metal is Au, Ag, Pt, Pd or their alloy,
Described 3rd metal is Au, Ag, Pt, Pd or their alloy, and
The surface of described second coating has the roughness of about 1nm to about 6nm.
2. semiconductor device closing line according to claim 1, the thickness of the combination of wherein said first coating and described second coating is about 30nm to about 100nm.
3. semiconductor device closing line according to claim 2, the thickness of wherein said first coating is about 25nm to about 85nm.
4. semiconductor device closing line according to claim 1, the cross-sectional area of the combination of wherein said first coating and described second coating is about 0.597% of the cross-sectional area of described closing line to about 1.97%.
5. semiconductor device closing line according to claim 1, the cross-sectional area of the combination of wherein said first coating and described second coating is about 0.993% of the cross-sectional area of described closing line to about 1.97%.
6. semiconductor device closing line according to claim 1, the cross-sectional area of the combination of wherein said first coating and described second coating is about 1.189% of the cross-sectional area of described closing line to about 1.581%.
7. a semiconductor device closing line, described closing line comprises:
Core material, described core material has the first metal as key component; With
Coating, described coating formation on the surface of described core material, and has the second metal as key component, described bimetallic component and composition and the component of described first metal with form different,
Wherein said first metal is Cu, Ag or their alloy,
Described second metal is Au, Ag, Pt, Pd or their alloy, and
The surface of described coating has the roughness of about 1nm to about 6nm.
8. a manufacture method for semiconductor device closing line, described manufacture method comprises:
Have the first metal as in the core material of key component formed there is first coating of the second metal as key component;
Bracing wire is carried out to the described core material defining described first coating thereon; And
Formed in described core material and described first coating after described bracing wire and there is second coating of the 3rd metal as key component,
Wherein said first metal is Cu, Ag or their alloy,
Described second metal is Au, Ag, Pt, Pd or their alloy, and
Described 3rd metal is Au, Ag, Pt, Pd or their alloy.
9. manufacture method according to claim 8, wherein said first metal is different from described second metal.
10. manufacture method according to claim 8, described manufacture method is also included in the bracing wire after the formation of described second coating,
Described bracing wire wherein after the formation of described second coating carries out no more than twice.
11. manufacture methods according to claim 8, wherein do not carry out bracing wire after the formation of described second coating.
12. manufacture methods according to claim 8, described manufacture method be also included in the formation of described second coating after by the surface roughening of described second coating.
13. manufacture methods according to claim 12, the described roughening on the surface of wherein said second coating comprises the second coating described in plasma treatment.
14. manufacture methods according to claim 12, the surface of wherein said second coating has the roughness of about 1nm to about 6nm.
CN201380057629.3A 2012-09-05 2013-09-04 Bonding wire for semiconductor device and manufacturing method therefor Pending CN104781920A (en)

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