CN104779518A - Lateral multi-end symmetry pumped alkali vapor laser MOPA (master oscillator power amplifier) system - Google Patents
Lateral multi-end symmetry pumped alkali vapor laser MOPA (master oscillator power amplifier) system Download PDFInfo
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Abstract
The invention discloses a lateral multi-end symmetry pumped alkali vapor laser MOPA (master oscillator power amplifier system). A tunable semiconductor laser power amplification system comprises a semiconductor laser, an amplifier, two isolators, two planar total reflective mirrors, two half wave plates, two half-transparent half-reflecting mirrors, a high-transparent low-reflecting mirror, a rubidium vapor saturation absorbing tank and an optical detector; a seed light system comprises a focusing lens, a polarization splitting lens, a temperature control box, a rubidium vapor tank, a concave full-reflecting mirror and a planar output coupling mirror; the master oscillator power amplifier MOPA system comprises a planar full-reflecting mirror, a laser diode array, a beam expanding mirror, a transparent quartz tube and a rubidium vapor tank. The one-way absorption efficiency of alkali metal vapor to pumping light is improved, and stable output of seed light can be ensured due to a stable plano-concave resonant cavity; vapor deposition can be avoided, and the service life of the vapor tank is prolonged; by adopting a lateral multi-end symmetry beam coupling mode, a high matching degree of pumping light and an expanded seed light mode can be ensured, and high-quality and high-efficiency amplification light can be obtained.
Description
Technical field
The present invention relates to a kind of vapor laser MOPA system, especially relate to a kind of side multiterminal symmetric pump alkali metal vapour laser MOPA(master oscillator power amplifier) system.
Background technology
Semiconductor laser pumping alkali metal vapour laser DPALs (diode-pumped alkali vopor lasers) is the new pattern laser device that the high-efficiency high power near-infrared laser with high light beam quality exports, these near-infrared lasers have wide practical use in laser cooling, oriented energy transmission, material processed etc., cause great interest and the further investigation of researcher in the last few years, and achieve major progress.Adopt MOPA system to be guarantee beam quality while of improving alkali metal vapour laser power, avoid the effective way of thermal effect, experimentally obtained a series of progress in longitudinal pumping and horizontal single-ended pumping alkali metal vapour laser MOPA system aspects at present, and horizontal multiterminal symmetric pump not yet there is related experiment achievement.In order to obtain stable, efficient, high power and high-quality alkali metal vapour Laser output, except needs reach Threshold pumped power and threshold temperature, the also following condition of demand fulfillment: one is the pump light that wavelength and alkali metal atom D2 Absorption Line centre wavelength will be had to coincide, by alkali metal atom from ground state pumping to Absorption Line energy level, and need the output wavelength of pumping source without drift without mode hopping; Two is will have high-quality and the stable seed light exported, and meet that chamber mirror is coaxial, the resonant cavity of chamber mould and pump beam higher mode coupling; Three is to have the MOPA system providing laser amplifier, and seed light and pump light also will have higher pattern matching in amplification pond; Four is that seed light steam pond and amplification light steam pond will have appropriate buffer gas and temperature control system, while preventing alkali metal atom and buffer gas from producing chemical reaction, ensure that steam pond window temperature is higher than its medium temperature to avoid alkali metal vapour in the deposition of window.The satisfied of these conditions is restriction side multiterminal symmetric pump alkali metal vapour laser MOPA system bright dipping and the stable technical barrier exported.
Summary of the invention
For solving Problems existing in background technology, the object of the present invention is to provide a kind of side multiterminal symmetric pump alkali metal vapour laser MOPA(master oscillator power amplifier) system, power adjustable, beam quality are high, thermal effect is low, this system uses the pump light source of narrow line width regulatable, by the wavelength precision regulating of pump light source seed laser to the absorbent core wavelength 780.24nm of rubidium atom, lock current of trying one's best when harmonic is long module, is convenient to the stable output of pump light like this; In rubidium pond, be filled with the ethane gas of 600Torr, increase rubidium atom from energy level pumping to the relaxation rate of upper laser level; By adding quarter wave plate between concave mirror and temperature-controlled box, by extremely coaxial to concave mirror and plane output coupling mirror precision regulating, form stable plano-concave resonant cavities; Use high precision temperature control device, make the temperature of rubidium steam pond window higher than its middle 5 degree, avoid the deposition of rubidium steam at window.Adopt the transparent quartz tube of temperature control box and band temperature control as temperature control system respectively, to meet the needs of vertical and horizontal two kinds of pump modes to seed light and amplification light steam pond.Adopt side multiterminal symmetric pump structure, to make pump light mate with seed light mode height, specifically can use two ends, four ends, six ends and even eight end pumpings, pumping terminal number is higher, and pump light distributes more even in amplification pond, and pattern matching is also higher.
The technical solution adopted for the present invention to solve the technical problems is:
The seed laser that semiconductor laser sends incides on the first plane total reflective mirror after the first isolator, the reverberation of the first plane total reflective mirror is divided into transmitted light and reverberation by the first semi-transparent semi-reflecting lens after the first half-wave plate, and the transmitted light of the first semi-transparent semi-reflecting lens is divided into through Beam and two bundle reverberation again through the saturating low anti-mirror of height;
The transmitted light of high saturating low anti-mirror to shine on the second semi-transparent semi-reflecting lens reflection again and by the central shaft of rubidium saturated with vapor absorption cell through total reflective mirror, wherein arbitrary a branch of reverberation is by the outgoing of rubidium saturated with vapor absorption cell central shaft to select high saturating low anti-mirror, and this bundle reverberation from the saturating low anti-mirror of height incides photo-detector after rubidium saturated with vapor absorption cell;
The reverberation of the first semi-transparent semi-reflecting lens amplifies through semiconductor laser amplifier successively, second isolator, second half-wave plate, incide transmission on polarizing beam splitter mirror after condenser lens and form the pump light of horizontal polarization, the transmitted light of polarizing beam splitter mirror incides in the rubidium steam pond of temperature control box and absorbs and produce the rubidium vapor laser of vertical polarization, the rubidium vapor laser of unabsorbed pump light and generation reflects through concave mirror to be got back to polarizing beam splitter mirror through rubidium steam pond again after outgoing and is divided into through Beam and a branch of reverberation: this bundle transmitted light of polarizing beam splitter mirror is the pump light of horizontal polarization, through polarizing beam splitter mirror successively line focus lens, second half-wave plate shines the second isolator place and is isolated, this bundle reverberation of polarizing beam splitter mirror is the rubidium vapor laser of vertical polarization, incide on plane total reflective mirror through plane output coupling mirror and reflect, the rubidium steam entered after beam expanding lens expands again in transparent quartz tube amplifies pond and finally exports amplification light, and the side in rubidium steam amplification pond is provided with the multiple semiconductor laser arrays for sending pump light.
The reflectivity of described plane output coupling mirror is 22%, and the transmissivity of high saturating low anti-mirror is 92%, and reflectivity is 8%.
Described concave mirror and plane output coupling mirror form " L " type plano-concave resonant cavities, and the distance between concave mirror and polarizing beam splitter mirror adds that the distance between polarizing beam splitter mirror and plane output coupling mirror is less than the focal length 50cm of concave mirror.
The pump light that described semiconductor laser array sends enters rubidium steam through light beam coupling system and amplifies pond.
Described transparent quartz tube is with temperature control system, and transparent quartz tube is tied with temp. control belt and amplifies pond temperature-controllable to make rubidium steam.
Described all semiconductor laser arrays send the hot spot after pump light superposition and the facular model matched expanding rear seed light.
Described semiconductor laser exports the seed laser that light is tunable wave length, live width is less than 1MHz, and absorbent core wavelength is 780.24nm, and the polarization state of outgoing seed laser is horizontal polarization.
Described multiple semiconductor laser arrays uniformly at intervals symmetry are positioned at around rubidium steam amplification side, pond.
The first described plane total reflective mirror is vertical with the first semi-transparent semi-reflecting lens, and the focal length of condenser lens is 15cm.
Described rubidium steam pond is placed in temperature control box, is filled with the ethane gas of 600Torr in described rubidium steam pond; Center, rubidium steam pond is placed in the focus place of condenser lens.
The beneficial effect that the present invention has is:
1, the present invention uses the pump light source of narrow line width regulatable, its wavelength is adjusted to the centre wavelength of rubidium vapor adsorption line, and is locked by frequency locking technology, and rubidium steam is absorbed up to 95% the one way of pump light.
2, the present invention is filled with the ethane gas of 600Torr in rubidium pond, increases rubidium atom from energy level pumping to the relaxation rate of upper laser level, has ensured the condition that rubidium vapor laser produces.
3, the present invention by adding quarter wave plate between concave mirror and temperature-controlled box, by extremely coaxial to concave mirror and plane output coupling mirror precision regulating, forms stable plano-concave resonant cavities.
4, the present invention uses controlled temperature-controlled process, makes the temperature of rubidium steam pond window higher than in the middle of it 5 degree, avoids the deposition of rubidium steam at window, extends the useful life in rubidium pond while minimally power loss.
5, the present invention adopts the transparent quartz tube of band temp. control belt as the temperature control system amplifying pond, ensureing that the pumping luminous energy that the multiple LDAs in side produces is coupled into the temperature-controllable ensureing to amplify pond while rubidium steam amplifies pond, side multiterminal symmetric pump structure makes pump light more uniformly distribute in amplification pond, make itself and seed luminous energy produce higher pattern matching, ensure that the high-quality amplifying light is stable and export.
Accompanying drawing explanation
Accompanying drawing is index path of the present invention.
In figure: 1, semiconductor laser, 2, first isolator, 3, first plane total reflective mirror, 4, first half-wave plate, 5, first semi-transparent semi-reflecting lens, 6, semiconductor laser amplifier, 7, second isolator, 8, second half-wave plate, 9, high saturating low anti-mirror, 10, second plane total reflective mirror, 11, rubidium saturated with vapor absorption cell, 12, second semi-transparent semi-reflecting lens, 13, photo-detector, 14, condenser lens, 15, polarizing beam splitter mirror, 16, temperature control box, 17, rubidium steam pond, 18, quarter wave plate, 19, concave mirror, 20, plane output coupling mirror, 21, 3rd plane total reflective mirror, 22, semiconductor laser array, 23, beam expanding lens, 24, transparent quartz tube, 25, rubidium steam amplifies pond.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the present invention are described further.
As shown in Figure 1, the concrete light channel structure of the present invention is as follows: the seed laser that semiconductor laser 1 sends incides on the first plane total reflective mirror 3 after the first isolator 2, the reverberation of the first plane total reflective mirror 3 is divided into transmitted light and reverberation by the first semi-transparent semi-reflecting lens 5 after the first half-wave plate 4, the transmitted light of the first semi-transparent semi-reflecting lens 5 is divided into through Beam and two bundle reverberation again through the saturating low anti-mirror 9 of height, and the two bundle reverberation that high saturating low anti-mirror 9 reflects are produced by the forward and backward minute surface of the saturating low anti-mirror 9 of height respectively.
As shown in Figure 1, the transmitted light of high saturating low anti-mirror 9 to shine on the second semi-transparent semi-reflecting lens 12 reflection again and by the central shaft of rubidium saturated with vapor absorption cell 11 through total reflective mirror 10, the high saturating low anti-mirror 9 of selection wherein arbitrary a branch of reverberation passes through the outgoing of rubidium saturated with vapor absorption cell 11 central shaft, this bundle reverberation from the saturating low anti-mirror 9 of height incides photo-detector 13 after rubidium saturated with vapor absorption cell 11, by frequency locking technology, semiconductor pumped center wavelength of light is locked in the absorbent core wavelength of alkali metal atom, thus pump light is stablized in generation.
As shown in Figure 1, the reverberation of the first semi-transparent semi-reflecting lens 5 amplifies through semiconductor laser amplifier 6 successively, incide transmission on polarizing beam splitter mirror 15 after the second isolator 7, second half-wave plate 8, condenser lens 14 forms the pump light of horizontal polarization, the transmitted light of polarizing beam splitter mirror 15 incides in the rubidium steam pond 17 of temperature control box 16 and absorbs and produce the rubidium vapor laser of vertical polarization, energy level in pumping is excited to after ground state rubidium Atomic absorption pump light in rubidium steam pond 17, collide with the ethane in rubidium steam pond 17 again and be transferred to upper laser level, produce rubidium vapor laser; The rubidium vapor laser of unabsorbed pump light and generation reflects through concave mirror 19 to be got back to polarizing beam splitter mirror 15 through rubidium steam pond 17 again after outgoing and is divided into through Beam and a branch of reverberation: this bundle transmitted light of polarizing beam splitter mirror 15 is the pump light of horizontal polarization, shines the second isolator 7 place be isolated through polarizing beam splitter mirror 15 successively line focus lens 14, second half-wave plate 8; This bundle reverberation of polarizing beam splitter mirror 15 is the rubidium vapor laser of vertical polarization, incide on plane total reflective mirror 21 through plane output coupling mirror 20 and reflect, the rubidium steam entered after beam expanding lens 23 expands again in transparent quartz tube 24 amplifies pond 25 and finally exports amplification light, rubidium steam amplifies pond 25 and is placed in transparent quartz tube 24, and the side in rubidium steam amplification pond 25 is provided with the multiple semiconductor laser arrays 22 for sending pump light.
The center of the present invention's each optical element is on the same line on same optical axis: semiconductor laser 1 and the first isolator 2 are on same optical axis, semiconductor laser amplifier 6, second isolator 7, second half-wave plate 8, condenser lens 14, polarizing beam splitter mirror 15, rubidium steam pond 17 and concave mirror 19 are on same optical axis, rubidium saturated with vapor absorption cell 11, second semi-transparent semi-reflecting lens 12 and photo-detector 13 are on same optical axis, and plane total reflective mirror 21, beam expanding lens 23, transparent quartz tube 24 and rubidium steam amplify pond 25 on same optical axis.
The reflectivity of plane output coupling mirror 20 is 22%, and the transmissivity of high saturating low anti-mirror 9 is 92%, and reflectivity is 8%.
Concave mirror 19 and plane output coupling mirror 20 form " L " type plano-concave resonant cavities, distance between concave mirror 19 and polarizing beam splitter mirror 15 adds that the distance between polarizing beam splitter mirror 15 and plane output coupling mirror 20 is less than the focal length 50cm of concave mirror 19, and namely the total length of plano-concave resonant cavities " L " is less than the focal length 50cm of concave mirror 19.
The pump light that semiconductor laser array 22 sends enters rubidium steam through light beam coupling system and amplifies pond 25, and its light beam coupling system can adopt set of lenses.
Transparent quartz tube 24 is with temperature control system, and transparent quartz tube 24 is tied with temp. control belt and amplifies pond 25 temperature-controllable to make rubidium steam.
Beam expanding lens 23 pairs of seed light expand, it is made efficiently to be amplified by gain media, all semiconductor laser arrays 22 send the hot spot after pump light superposition and the facular model matched expanding rear seed light, and namely its with a tight waist girdling the waist with seed light matches, thus carries out efficient pumping to seed light.
Semiconductor laser 1 exports the seed laser that light is tunable wave length, live width is less than 1MHz, and absorbent core wavelength is 780.24nm, and the polarization state of outgoing seed laser is horizontal polarization.The wavelength of seed laser, by regulating the Piezoelectric Ceramic module in semiconductor laser power supply, is adjusted to the absorbent core wavelength 780.24nm of rubidium atom, and carries out frequency locking by frequency stabilization light path 9-13 by the seed laser that semiconductor laser 1 exports; The laggard semiconductor laser amplifier 6 of seed laser horizontal exit carries out power amplification, by regulating the operating current regulation output pumping light power of laser amplifier.
Multiple semiconductor laser array 22 uniformly at intervals symmetry is positioned at rubidium steam and amplifies around side, pond 25, and the quantity of semiconductor laser array 22 can be even number, namely 2,4,6 ... Deng.
First plane total reflective mirror 3 is vertical with the first semi-transparent semi-reflecting lens 5, and the focal length of condenser lens 14 is 15cm.
Rubidium steam pond 17 is placed in temperature control box 16, is filled with the ethane gas of 600Torr in described rubidium steam pond 17; Center, rubidium steam pond 17 is placed in the focus place of condenser lens 14.
Preferred semiconductor laser 1 can adopt ECL801 type narrow linewidth Littrow structure external-cavity semiconductor laser 1, semiconductor laser amplifier 6 can adopt TAL100 type semiconductor laser amplifier, when adopting above-mentioned laser and amplifier, the isolation >60 dB in concrete enforcement between the first isolator 2 and the second isolator 7.
The light path system of the longitudinal single-ended pumping rubidium vapor laser of narrow line width regulatable semiconductor of the present invention, comprises tunable semiconductor power amplification laser system, seed light system, side multiterminal symmetric pump MOPA system, wherein:
1) tunable semiconductor power amplification laser system: form primarily of semiconductor laser 1, first isolator 2, plane total reflective mirror 3, first half-wave plate 4, first semi-transparent semi-reflecting lens 5, semiconductor laser amplifier 6, second isolator 7, second half-wave plate 8, high saturating low anti-mirror 90, second plane total reflective mirror 10, rubidium saturated with vapor absorption cell 11, second semi-transparent semi-reflecting lens 12 and photo-detector 13.
ECL801 type Littrow structure external-cavity semiconductor laser 1 can be selected in concrete enforcement, the laser that its output wavelength is tunable, live width is less than 1MHz also carries out power amplification through TAL100 type semiconductor laser amplifier 6, by regulating the operating current regulation output pump laser power of laser amplifier, by Locking System by its wavelength locking at rubidium vapor core wavelength, stable center spectral line, thus the stability ensureing rubidium steam seed laser.
2) seed light system: the plane output coupling mirror 20 being 22% primarily of condenser lens 14, polarizing beam splitter mirror 15, temperature control box 16, rubidium steam pond 17, quarter wave plate 18, concave mirror 19 and reflectivity forms.Can the focal length of condenser lens 14 of choice for use be 15cm in concrete enforcement, rubidium steam pond 17 be placed in temperature control box 16, and center is placed in the focus place of condenser lens 14.Concave mirror 19 is placed in temperature control box 16 right-hand member nearby to provide good pattern matching.This seed light system can not only ensure good seed light beam quality, and power adjustable.
3) side multiterminal symmetric pump MOPA system: primarily of transparent quartz tube 24 and the rubidium steam pond 25 of the 3rd plane total reflective mirror 21, semiconductor laser array 22, beam expanding lens 23, band temperature control system.Beam expanding lens 23 will expand with by gain media efficient absorption to seed light, the multiple semiconductor laser array 22 in side the pump light sent out enter rubidium steam by the transparent quartz tube 24 of light beam coupling system, coupled band temperature control system and amplify pond 25, transparent quartz tube 24 does not affect its light distribution, and side multiterminal symmetric pump structure can make pump light and seed light hot spot match, and it is simpler, easy to adjust than longitudinal pumping light path.
Specific embodiment of the invention process and principle as follows:
Tunable semiconductor power amplification laser system: ECL801 type Littrow structure external-cavity semiconductor laser 1 utilizes the dispersion selection index system of grating, the a part of emission spectra making laser gain medium frequency very narrow feeds back in laser tube, add the competitiveness of shoot laser pattern, make laser more easily be operated in single longitudinal mode and narrow linewidth state.Wave-length coverage is 780 ~ 785nm, Output of laser live width <1MHz, and tuning without mode skip scope is 12GHz, quality for outputting laser beam M
2<1.5, side mode suppression ratio is 40 ~ 50dB, and working temperature is at 20 ~ 30 DEG C.Laser head be fixed on heat radiation good heat sink on, the polarization state of outgoing seed laser is horizontal polarization, through the first semi-transparent semi-reflecting lens 5, half enters frequency stabilization light path, half enters TAL100 type tunable semiconductor laser amplifier 6, this amplifier is the stimulated radiation amplification principle utilizing semi-conducting material, realize the device that coherent light amplifies, form primarily of semiconductor laser amplifier chip and driving power, can amplify the power of the semiconductor laser of multiple wavelength, one way maximum amplification is about 67.Output of laser live width <1MHz, tuning without mode skip scope is 12GHz, quality for outputting laser beam M
2<1.5, side mode suppression ratio is 40 ~ 50dB, and working temperature is at 21 ~ 25 DEG C.For preventing the pump light reflected from causing damage to laser, before seed laser and amplifier, place the isolator 2,7 of a 60dB respectively to isolate reverberation.
In order to prevent the drift of machinery from making injection deleterious, so that amplification efficiency reduces, and regularly can be optimized adjustment, to keep maximum coupling efficiency to the first plane total reflective mirror 3, first semi-transparent semi-reflecting lens 5 and the first half-wave plate 4.Regulate the second half-wave plate 8 that outgoing pump light transmitance can be made the highest.Second half enters the semiconductor seed laser of frequency stabilization light path, 4% passes through by rubidium saturated with vapor absorption cell 11 and enters photo-detector 13, oscilloscope can obtain its saturated absorption spectrum, and 92% enters steam pond 11 as compensation light beam through the second plane total reflective mirror 10, second semi-transparent semi-reflecting lens 12.By the saturated absorption spectrum on observation oscilloscope, error signal and PZT sweep signal, regulate the PZT(piezoelectric ceramic in semiconductor laser power supply) driver module, the wavelength of seed laser is adjusted to the absorbent core wavelength 780.24nm of rubidium atom, lock current of trying one's best when harmonic is long module and only adjust PZT module, is convenient to the stable output of pump light like this.
Seed light system: polarizing beam splitter mirror 15 reflective vertical polarization s component, but allow parallel polarization p component to pass through, thus be separated s and p polarized light component, for transmitted light beam, having the highest polarization extinction ratio is T
p: T
s>1000:1, as a comparison, the extinction ratio of folded light beam is 100:1, and wavelength is the pump light of 780.24nm is orthogonal with the polarization direction of the rubidium laser of 795nm, and therefore polarizing beam splitter mirror can by both beam splitting, steam pond 17 is fixed with two annular iron rings in temperature-controlled box 16 inside, iron ring position is as far as possible near the two ends in steam pond 17, thus make the temperature at two ends, steam pond 17 higher 5 degree than middle temperature, prevent steam in the deposition of steam pond window, the window pollution brought for avoiding the chemical reaction of buffer gas ethane and rubidium atom and the loss of rubidium and ethane, heating maximum temperature is no more than 130 DEG C, steam pond is the cylinder of 2.5cm × 2.5cm, and window is coated with the anti-film of 780.24nm, and the ethane gas being filled with 600Torr in pond is to accelerate in pumping energy level to the relaxation rate of upper laser level, concave mirror 19 focal length is 50cm, and the reflectivity of plane output coupling mirror 20 is 22%, both composition " L " type plano-concave resonant cavities, whether two chamber mirrors are coaxially most important, only have coaxial, just likely shoot laser, when adjusting coaxial, quarter wave plate 18 is added between concave mirror 19 and temperature-controlled box 16, pump light first time is changed into elliptically polarized light after quarter wave plate 18, after arrival concave mirror 19 is reflected, second time is through quarter wave plate 18, due to the optical axis of quarter wave plate 18 selected and the main shaft of elliptically polarized light not parallel, so second time is after quarter wave plate 18, the pump light being reflected 19 by concave mirror is still elliptically polarized light, then can be reflected onto plane output coupling mirror in the vertical component of polarizing beam splitter mirror 15 place elliptically polarized light, still steam pond can be reflected onto after being arrived polarizing beam splitter mirror by the pump light that plane output coupling mirror reflects, now between polarizing beam splitter mirror 20 and temperature-controlled box 16, there are 3 hot spots, be respectively launching spot, the flare of concave mirror 19 and the flare of plane output coupling mirror 20, this 3 spot is adjusted to inregister, then two chamber mirrors are coaxially, and it is all coaxial with incident light, the length of plano-concave resonant cavities " L " is less than the focal length of concave mirror 19.
Side multiterminal symmetric pump MOPA system: seed light is girdled the waist and expanded and fully can be absorbed to obtain higher amplification efficiency by gain media by beam expanding lens 23, rubidium steam amplification pond 25 is placed in and is tied with in the transparent quartz tube 24 of temp. control belt, the multiple semiconductor laser array 22 in side the pump light sent out entered by light beam coupling system, coupled and amplify pond 25, making it girdle the waist is positioned on central shaft, transparent quartz tube 24 does not affect its light distribution, and side multiterminal symmetric pump structure can make pump light and seed light hot spot match, because temp. control belt can occupy quartz ampoule part surface area, 360 can not be carried out from the side
oomnirange pumping, but the semiconductor laser array of varying number can be selected as required, place to amplify pond central shaft for symmetrical centre, two ends, four ends, six ends and even eight end symmetric pump structures are adopted to carry out efficient pumping to seed light, now seed light is also without the need to expanding to whole steam pond, account for 1/2 to 5/7 greatly, mainly make it be distributed in all pump beam intersections.Light is exported by the high-quality regulating seed light and profile pump luminous power can obtain different capacity.
Thus, the present invention uses the frequency stabilization pump light source of narrow line width regulatable, its wavelength is adjusted to the centre wavelength of alkali metal vapour Absorption Line and frequency locking, and alkali metal vapour is absorbed up to more than 95% the one way of pump light.In steam pond, be filled with appropriate ethane gas, increase alkali metal atom from energy level pumping to the relaxation rate of upper laser level, ensure the condition that laser produces.By adding quarter wave plate between concave mirror and temperature-controlled box, concave mirror and plane output coupling mirror being adjusted to coaxial, forming stable plano-concave resonant cavities.
Use controlled temperature-controlled process in addition, make the temperature of steam pond window higher 5 degree than middle, avoid the deposition of steam at window, while minimally power loss, extend the useful life in steam pond, the stable output of guarantee seed laser.
Alkali metal vapour laser amplifier pond is placed in transparent quartz tube and temperature control system, side adopts multiple semiconductor laser array LDAs (laser diode arrays) to carry out pumping symmetrically and evenly by light beam coupling system to seed light, transparent quartz tube with temp. control belt can ensure the temperature-controllable ensureing steam pond while the multiterminal of pump light enter, seed light is efficiently amplified by gain media after beam expanding lens expands, the matched of the seed light pattern after multiterminal symmetric pump ensure that pump light and expands, to obtain the amplification light of high quality and high efficiency.
As can be seen here, the present invention can improve the one way absorption efficiency of alkali metal vapour to pump light, adds alkali metal atom relaxation rate, has stable plano-concave resonant cavities, has ensured the stable output of seed light; Avoid the deposition of steam at window, extend the useful life in steam pond; Adopt side multiterminal symmetrical beam coupled modes, ensure that pump light and the matched expanding rear seed light pattern, obtain the amplification light of high quality and high efficiency, there is significant technique effect.
Above-mentioned embodiment is used for explaining and the present invention is described, instead of limits the invention, and in the protection range of spirit of the present invention and claim, any amendment make the present invention and change, all fall into protection scope of the present invention.
Claims (10)
1. a side multiterminal symmetric pump alkali metal vapour laser MOPA system, is characterized in that:
The seed laser that semiconductor laser (1) sends incides on the first plane total reflective mirror (3) after the first isolator (2), the reverberation of the first plane total reflective mirror (3) is divided into transmitted light and reverberation by the first semi-transparent semi-reflecting lens (5) after the first half-wave plate (4), and the transmitted light of the first semi-transparent semi-reflecting lens (5) is divided into through Beam and two bundle reverberation again through the saturating low anti-mirror (9) of height;
The transmitted light of high saturating low anti-mirror (9) shines through total reflective mirror (10) and the second semi-transparent semi-reflecting lens (12) to reflect and by the central shaft of rubidium saturated with vapor absorption cell (11) again, wherein arbitrary a branch of reverberation is by rubidium saturated with vapor absorption cell (11) central shaft outgoing to select high saturating low anti-mirror (9), and this bundle reverberation from the saturating low anti-mirror (9) of height incides photo-detector (13) after rubidium saturated with vapor absorption cell (11);
The reverberation of the first semi-transparent semi-reflecting lens (5) amplifies through semiconductor laser amplifier (6) successively, second isolator (7), second half-wave plate (8), the pump light that the upper transmission of polarizing beam splitter mirror (15) forms horizontal polarization is incided after condenser lens (14), the transmitted light of polarizing beam splitter mirror (15) incides in the rubidium steam pond (17) of temperature control box (16) and absorbs and produce the rubidium vapor laser of vertical polarization, the rubidium vapor laser of unabsorbed pump light and generation is got back to polarizing beam splitter mirror (15) through rubidium steam pond (17) again and is divided into through Beam and a branch of reverberation after concave mirror (19) reflects outgoing:
This bundle transmitted light of polarizing beam splitter mirror (15) is the pump light of horizontal polarization, shines the second isolator (7) place be isolated through polarizing beam splitter mirror (15) successively line focus lens (14), the second half-wave plate (8); This bundle reverberation of polarizing beam splitter mirror (15) is the rubidium vapor laser of vertical polarization, incide on plane total reflective mirror (21) through plane output coupling mirror (20) and reflect, the rubidium steam entered after beam expanding lens (23) expands again in transparent quartz tube (24) amplifies pond (25) and finally exports amplification light, and the side of rubidium steam amplification pond (25) is provided with the multiple semiconductor laser arrays (22) for sending pump light.
2. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, it is characterized in that: the reflectivity of described plane output coupling mirror (20) is 22%, the transmissivity of high saturating low anti-mirror (9) is 92%, and reflectivity is 8%.
3. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, it is characterized in that: described concave mirror (19) and plane output coupling mirror (20) form " L " type plano-concave resonant cavities, and the distance between concave mirror (19) and polarizing beam splitter mirror (15) adds that the distance between polarizing beam splitter mirror (15) and plane output coupling mirror (20) is less than the focal length 50cm of concave mirror (19).
4. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, is characterized in that: the pump light that described semiconductor laser array (22) sends enters rubidium steam through light beam coupling system and amplifies pond (25).
5. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, it is characterized in that: described transparent quartz tube (24) is with temperature control system, and transparent quartz tube (24) is tied with temp. control belt and amplifies pond (25) temperature-controllable to make rubidium steam.
6. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, is characterized in that: described all semiconductor laser arrays (22) send the hot spot after pump light superposition and the facular model matched expanding rear seed light.
7. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, it is characterized in that: described semiconductor laser (1) exports the seed laser that light is tunable wave length, live width is less than 1MHz, absorbent core wavelength is 780.24nm, and the polarization state of outgoing seed laser is horizontal polarization.
8. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, is characterized in that: described multiple semiconductor laser arrays (22) uniformly at intervals symmetry are positioned at around rubidium steam amplification pond (25) side.
9. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, it is characterized in that: the first described plane total reflective mirror (3) is vertical with the first semi-transparent semi-reflecting lens (5), and the focal length of condenser lens (14) is 15cm.
10. a kind of side according to claim 1 multiterminal symmetric pump alkali metal vapour laser MOPA system, it is characterized in that: described rubidium steam pond (17) is placed in temperature control box (16), in described rubidium steam pond (17), be filled with the ethane gas of 600Torr; Rubidium steam pond (17) center is placed in the focus place of condenser lens (14).
Priority Applications (1)
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106932318A (en) * | 2015-12-30 | 2017-07-07 | 中国科学院电子学研究所 | The diagnostic device and method of semiconductor pumped alkali metal vapour laser |
| CN108007901A (en) * | 2017-11-30 | 2018-05-08 | 南昌航空大学 | A kind of method and apparatus for detecting multicomponent trace gas concentration |
| CN108039641A (en) * | 2017-11-07 | 2018-05-15 | 西南技术物理研究所 | A kind of alkali metal vapour laser of dual wavelength double modulation |
| CN109273979A (en) * | 2018-11-23 | 2019-01-25 | 中国人民解放军国防科技大学 | Alkali metal vapor laser based on circularly polarized light polarization pumping and light emitting method |
| CN109921281A (en) * | 2019-02-13 | 2019-06-21 | 中国科学院上海光学精密机械研究所 | The saturated absorption frequency stabilization device that single beam expands |
| CN111855579A (en) * | 2019-04-28 | 2020-10-30 | 核工业理化工程研究院 | Alkali metal atom vapor absorption cell and spectral measurement method thereof |
| CN112098330A (en) * | 2020-09-22 | 2020-12-18 | 中国人民解放军国防科技大学 | Atomic concentration measuring device and method for alkali metal vapor laser |
| CN113131336A (en) * | 2021-04-09 | 2021-07-16 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking method for semiconductor laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324686A (en) * | 2011-09-02 | 2012-01-18 | 浙江大学 | Semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor |
| CN103036139A (en) * | 2012-12-17 | 2013-04-10 | 浙江大学 | Narrow-linewidth tunable semiconductor longitudinal single-ended pump rubidium steam laser optical path system |
| CN104393483A (en) * | 2014-11-24 | 2015-03-04 | 浙江大学城市学院 | 728nm frequency stabilized laser standard generation device and method thereof |
| CN204481322U (en) * | 2015-03-14 | 2015-07-15 | 浙江大学 | A kind of side multiterminal symmetric pump alkali metal vapour laser MOPA system |
-
2015
- 2015-03-14 CN CN201510110737.3A patent/CN104779518A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324686A (en) * | 2011-09-02 | 2012-01-18 | 浙江大学 | Semiconductor laser MOPA (Master Oscillator Power Amplifier) system for pumping alkali metal vapor |
| CN103036139A (en) * | 2012-12-17 | 2013-04-10 | 浙江大学 | Narrow-linewidth tunable semiconductor longitudinal single-ended pump rubidium steam laser optical path system |
| CN104393483A (en) * | 2014-11-24 | 2015-03-04 | 浙江大学城市学院 | 728nm frequency stabilized laser standard generation device and method thereof |
| CN204481322U (en) * | 2015-03-14 | 2015-07-15 | 浙江大学 | A kind of side multiterminal symmetric pump alkali metal vapour laser MOPA system |
Non-Patent Citations (3)
| Title |
|---|
| ZINING YANG等: "Modeling of an optically side-pumped alkali vapor amplifier with consideration of amplified spontaneous emission", 《OPTICS EXPRESS》 * |
| 杨静: "横向泵浦的DPALs的特性、机理与热管理研究", 《中国博士学位论文全文数据库信息科技辑》 * |
| 钱爱青: "横向泵浦艳蒸气激光MOPA系统的动力学模型研究", 《中国优秀硕士学位论文全文数据库信息利技辑》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106932318A (en) * | 2015-12-30 | 2017-07-07 | 中国科学院电子学研究所 | The diagnostic device and method of semiconductor pumped alkali metal vapour laser |
| CN108039641A (en) * | 2017-11-07 | 2018-05-15 | 西南技术物理研究所 | A kind of alkali metal vapour laser of dual wavelength double modulation |
| CN108007901A (en) * | 2017-11-30 | 2018-05-08 | 南昌航空大学 | A kind of method and apparatus for detecting multicomponent trace gas concentration |
| CN109273979A (en) * | 2018-11-23 | 2019-01-25 | 中国人民解放军国防科技大学 | Alkali metal vapor laser based on circularly polarized light polarization pumping and light emitting method |
| CN109273979B (en) * | 2018-11-23 | 2019-07-30 | 中国人民解放军国防科技大学 | Alkali metal vapor laser based on circularly polarized light polarization pumping and light emitting method |
| CN109921281A (en) * | 2019-02-13 | 2019-06-21 | 中国科学院上海光学精密机械研究所 | The saturated absorption frequency stabilization device that single beam expands |
| CN111855579A (en) * | 2019-04-28 | 2020-10-30 | 核工业理化工程研究院 | Alkali metal atom vapor absorption cell and spectral measurement method thereof |
| CN112098330A (en) * | 2020-09-22 | 2020-12-18 | 中国人民解放军国防科技大学 | Atomic concentration measuring device and method for alkali metal vapor laser |
| CN112098330B (en) * | 2020-09-22 | 2021-05-18 | 中国人民解放军国防科技大学 | Atomic concentration measuring device and method for alkali metal vapor laser |
| CN113131336A (en) * | 2021-04-09 | 2021-07-16 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking method for semiconductor laser |
| CN113131336B (en) * | 2021-04-09 | 2022-04-15 | 苏州长光华芯光电技术股份有限公司 | Wavelength locking method for semiconductor laser |
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