CN104779306A - Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure - Google Patents
Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure Download PDFInfo
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- CN104779306A CN104779306A CN201510189172.2A CN201510189172A CN104779306A CN 104779306 A CN104779306 A CN 104779306A CN 201510189172 A CN201510189172 A CN 201510189172A CN 104779306 A CN104779306 A CN 104779306A
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- 230000003667 anti-reflective effect Effects 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 42
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000005540 biological transmission Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000010023 transfer printing Methods 0.000 claims description 6
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000000609 electron-beam lithography Methods 0.000 claims description 3
- 238000004049 embossing Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 230000001965 increasing effect Effects 0.000 abstract description 4
- 230000035699 permeability Effects 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 206010018325 Congenital glaucomas Diseases 0.000 description 3
- 206010012565 Developmental glaucoma Diseases 0.000 description 3
- 208000007157 Hydrophthalmos Diseases 0.000 description 3
- 201000001024 buphthalmos Diseases 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a solar cell grid with an umbrella-shaped plug sub-wavelength anti-reflective structure. The solar cell grid adopts the structure that a silicon dioxide substrate is arranged at the upper part of the solar cell grid , silicon dioxide bulges are arranged on the silicon dioxide substrate, each silicon dioxide bulge is hollow cylindrical, and the inside of each silicon dioxide bulge is a cylindrical cavity; metal films cover the upper surfaces of other positions of the silicon dioxide substrate, except the silicon dioxide bulges; metal umbrella-shaped plugs are arranged on the solar cell grid, each metal umbrella-shaped plug comprises an umbrella handle and an umbrella cover, and each umbrella handle is positioned in the cylindrical cavity of the corresponding silicon dioxide bulge. The solar cell grid disclosed by the invention is provided with the umbrella-shaped plugs, a metal strip which is completely light-tight is replaced by the structure with high light permeability, so that the area of the incident light is increased, and the photo-electro transition rate is further increased.
Description
Technical field
The present invention relates to a kind of solar cell grid with the anti-reflection structure of sub-wavelength of umbrella plug, the abnormal transmission of light can be realized, thus strengthen light through efficiency, belong to nanosecond science and technology field.
Background technology
According to diffraction theory, if the diameter of aperture is less than the wavelength of light on opaque mask, light will be diffracted into all directions and get on.People wish the sub-wavelength light beam that can not only be obtained more multi-energy by aperture, and these light beams are not diffracted into all directions again simultaneously, namely realize sub-wavelength collimated light beam.
Since 1998 the optical transport that notes abnormalities (EOT), just attract the sight of a lot of scholar by the optical transport of golden film nano-pore or cycle slit, become the hot issue of research field.2002, the so-called buphthalmos structure of the people such as Lezec design, namely with diffraction aperture for the center of circle, around it, add the groove structure of a circle circle, meet two above requirements, this is because emergent light is coupled with the surface plasma of metal surface groove enhance aperture transmission.Optical property due to this structure uniqueness causes the vast interest of people, so also following based on the various Study on Deformation of this structure.Single slit is one of them by the structure that periodic grooves is surrounded, and we can regard this structure as the distortion of " buphthalmos " structure, namely become parallel construction by loop configuration.Specially designed buphthalmos structure can suppress light ground to be used for the microscope of dark field detection and imaging in addition.If be Bragg reflector groove design, the eye splice is configured to phasmon microcavity aperture, and it stores huge potentiality etc. in photoetching and data.Within 2006, Lalanne is studied single groove and narrow slit structure according to the microcosmic understanding of SPP Mode Coupling and scattering, and it is theoretical basically identical with numerical computations.
Hole array can strengthen Transmission light, this is because when electromagnetic transmission is to golden film surface, surface charge redistributes, and forms surface plasmons (SPP) phenomenon, add transmission potential with external electric field.Hole array is divided into one dimension hole array and two-dimensional array of apertures, and two-dimentional hole can be circle, triangle or rectangle.What is interesting is, One Dimension Periodic hole array is more more complex than two-dimensional array of apertures.Surface plasmons (SPP) resonance is divided into three kinds.
Closing tapered gaps, as metal V-shaped groove, is also a study hotspot.Correlative study finds, because the gap electricity propagated in the other direction starches the interference of son, partial groove is inner by resonant check.Analyze this phenomenon theoretically, researcher obtains the analysis expression of resonance condition, and prediction can resonant check 550 times, and they are by TPL microscopic examination then, confirms that v-depression can realize the intensity enhancing of 100 times.
The metal surface slit of sub-micron is that its edge is not sharp keen usually, often forms tapered slot structure with electron beam or focused ion beam processing, and the optical transmission properties of research tapered slot metal structure has more actual meaning.When aperture two wall of hole array is all parallel time (straight slits), it may not be so satisfactory that such transmission strengthens effect.To this, we consider that tapered slot is on light transmissive impact.Our problem is intended to the geometry of cone-shaped metal slit research cycle specifically, and namely thickness of metal film h, inclined angle alpha, periods lambda and lower bottom width g are on light transmissive impact.
Many optical systems, as transducer, nanoimprinting technology etc., have a common understanding: if an aperture is by opaque plated words, will hinder the propagation of light.It is believed that, even if film has aperture, and aperture has been covered by opaque metal, and in this case, the propagation of light also can be hindered.But, some scholar find, by specific structure, the aperture be blocked not only can not block the propagation of light, can strengthen greatly on the contrary light through.By mock inspection, can find, when aperture is covered by sheet metal completely, see by the angle of geometric optics, without any the possibility that light transmission goes, but light transmission rate adds on the contrary, has people to ascribe this phenomenon the antenna effect of barrier metal sheet to.
Based on the research of antenna effect, emerge again much new anti-reflection structure in recent years.As directly above the array of hole (not diameter contact aperture) add that size is greater than the rosette of bore dia, add the metallic media of below gold film at rosette edge, rosette is made semielliptical shape etc., the highest light transmission rate can reach 64%.But this is not the light transmissive limit, by certain improvement, light transmission rate can be improved further.How more effectively to improve the key subject that light transmission rate has become this field.
Summary of the invention
The present invention proposes a kind of solar cell grid that can improve light transmission rate further, that a kind of utilization has the anti-reflection structure of the sub-wavelength of umbrella plug and increases solar cell grid through light, have umbrella plug hide hole, ideal symmetrical, high light transmission, periodic two-dimensional structure.
Technical scheme of the present invention is:
Have a solar cell grid for the anti-reflection structure of sub-wavelength of umbrella plug, solar cell grid is provided with the anti-reflection structure of sub-wavelength of metal umbrella plug; The top of solar cell grid is silicon dioxide substrate, and described silicon dioxide substrate is provided with silicon dioxide projection, and described silicon dioxide projection is hollow cylinder, and inside is cylindrical cavity; Except silicon dioxide boss, the upper surface of other positions of silicon dioxide substrate is all attached with metal film; The anti-reflection structure of sub-wavelength of metal umbrella plug comprises umbrella handle and canopy, and described umbrella handle is positioned at the cylindrical cavity of silicon dioxide projection.
Solar cell grid being distributed with multiple metal umbrella plug, is the periodic two-dimensional battle array structure of 200nm*200nm when overlooking.
The thickness of described metal film is less than the height of silicon dioxide projection.
Preferably, described umbrella handle radius is the half of the radius of cylindrical cavity.
Preferably, the thickness of described metal film is 30nm.
Preferably, the height of described silicon dioxide projection is 40nm, and the radius of described cylindrical cavity is 35nm.
Preferably, described umbrella handle height 40nm, radius 25nm.
Preferably, the circle of described canopy height 40nm, to be radius be in bottom surface 70nm.
The maximum transmission rate of the solar cell grid of the described anti-reflection structure of the sub-wavelength with umbrella plug can reach 87%.
The present invention also provides the manufacture method of the solar cell grid of the anti-reflection structure of the sub-wavelength with umbrella plug, adopt nanometer embossing, be installed with standby by the programme controlled electron beam of computer nanometer of writing direct, the coining plate of the designed pattern of preparation, the template of the metal film part of first preparation except silicon dioxide projection and umbrella plug, the rear template preparing silicon dioxide projection, prepare independent umbrella plug template again, then by graph transfer printing to being coated on suprabasil photoresist, etch on substrate finally by ion milling, form a kind of anti-reflection solar cell grid structure of sub-wavelength umbrella that there is umbrella and live.
Another kind method is, first the mask plate with layout is made by computer-controlled electron beam lithography, utilize photoetching technique by mask exposure by graph transfer printing to being coated on on-chip photoresist, by ion beam etching, photoengraving glue pattern is successively shifted again, form a kind of anti-reflection structure of sub-wavelength period with umbrella plug.
When the structural parameters of the anti-reflection structure of sub-wavelength of umbrella plug change, the transmitance of light also can change thereupon.
By regulating the radius of umbrella handle and the size of cylindrical cavity radius, the transmitance of light can change, and when the size of the radius of umbrella handle is a half of the radius of cylindrical cavity, transmitance is maximum, and namely in cavity, duty ratio is 1:1.The radius increasing cylindrical cavity can improve the transmitance of light significantly, but, the size of cylindrical cavity is not be the bigger the better, consider the conductivity as solar energy grid, if expand the size of cylindrical cavity simply, reduce the area of metal umbrella handle, then resistance can be increased, side effect is played to solar cell, therefore, need to consider, the silicon dioxide projection choosing suitable size makes grid, after determining the radius of cylindrical cavity, then determine the size of radius of umbrella handle of umbrella plug.
Equally, by changing the thick of metal film, the transmitance of light changes, and thickness is less, and transmitance is larger, but still considers the conductivity problems of solar cell grid, is not get over Bao Yuehao, should chooses suitable thickness.
The present invention's distinguishing feature is: be the reduction of transmission area on the surface, actually increase transmitance.The canopy of umbrella plug covers cylindrical cavity completely, and umbrella handle occupies the portion of cylindrical cavity.From the angle of geometric optics, when cylindrical cavity is covered, through light should be reduce, or even completely light tight (supposing that only vertical irradiation is on sensitive surface).And through the new construction designed by the present invention, the transmitance of light does not only reduce, considerably increase on the contrary, when not having umbrella handle, transmitance is approximately 64%, and after namely increase umbrella handle reduces the area of printing opacity cylindrical cavity, transmitance rises on the contrary.
Existing solar energy grid is mostly silk screen printing and makes, and grid part is full wafer metal, completely light tight, utilizes the anti-reflection structure of sub-wavelength with umbrella plug, grid is made the good part of light transmission, then can improve photoelectric conversion rate.Owing to adding umbrella plug, from strict simulation result, anti-reflection structure tool of the present invention has the following advantages:
1, transmitance is compared and is improve about 20% without umbrella post (transmitance 64%);
2, metal volume increases, and improves conductance;
3, periodicity repetitive structure, cylindric aperture and principal column, be easy to processing.
This structure is used for solar cell grid, and this structure higher by light transmission replaces complete lighttight bonding jumper, improves the area of incident light, thus improves photoelectric conversion rate.
Accompanying drawing explanation
Fig. 1: the structural representation with a metal umbrella plug of the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug of the present invention.
Fig. 2: the vertical view of solar cell grid.
Fig. 3: the relation of pore radius and max transmissive peak (wavelength and transmissivity).
Fig. 4: the relation at golden film thickness and max transmissive peak.
Fig. 5: the relation at top " canopy " and max transmissive peak.
Fig. 6: the field pattern of the anti-reflection structure of sub-wavelength at transmitted light peak value place with umbrella plug of the present invention.
Embodiment
embodiment one
A kind of solar cell grid with the anti-reflection structure of sub-wavelength of umbrella plug, the top of solar cell grid is silicon dioxide substrate 1, described silicon dioxide substrate 1 is provided with silicon dioxide projection 2, and described silicon dioxide projection 2 is hollow cylinders, and inside is cylindrical cavity 3; Except protruding 2 positions of silicon dioxide, the upper surface of other positions of silicon dioxide substrate is all attached with metal film 4; Solar cell grid is also provided with metal umbrella plug 5, and described metal umbrella plug comprises umbrella handle 51 and canopy 52, and described umbrella handle is positioned at the cylindrical cavity of silicon dioxide projection.Solar cell grid being distributed with multiple metal umbrella plug, is the periodic two-dimensional battle array structure of 200nm*200nm when overlooking.The thickness of described metal film is less than the height of silicon dioxide projection.Described umbrella handle radius is the half of the radius of cylindrical cavity.The thickness of described metal film is 30nm.The height of described silicon dioxide projection is 40nm, and the radius of described cylindrical cavity is 35nm.Described umbrella handle height 40nm, radius 25nm.The circle of described canopy height 40nm, to be radius be in bottom surface 70nm.The maximum transmission rate of the solar cell grid of the described anti-reflection structure of the sub-wavelength with umbrella plug can reach 87%.
embodiment two
Adopt nanometer embossing, be installed with standby by the programme controlled electron beam of computer nanometer of writing direct, the coining plate of the designed pattern of preparation, the template of the metal film part of first preparation except silicon dioxide projection and umbrella plug, the rear template preparing silicon dioxide projection, prepare independent umbrella plug template again, then by graph transfer printing to being coated on suprabasil photoresist, etch on substrate finally by ion milling, form a kind of anti-reflection solar cell grid structure of sub-wavelength umbrella that there is umbrella and live.
embodiment three
First the mask plate with layout is made by computer-controlled electron beam lithography, utilize photoetching technique by mask exposure by graph transfer printing to being coated on on-chip photoresist, by ion beam etching, photoengraving glue pattern is successively shifted again, form a kind of anti-reflection structure of sub-wavelength period with umbrella plug.
Claims (10)
1. there is a solar cell grid for the anti-reflection structure of sub-wavelength of umbrella plug, it is characterized in that: solar cell grid is provided with the anti-reflection structure of sub-wavelength of metal umbrella plug; The top of solar cell grid is silicon dioxide substrate, and described silicon dioxide substrate is provided with silicon dioxide projection, and described silicon dioxide projection is hollow cylinder, and inside is cylindrical cavity; Except silicon dioxide boss, the upper surface of other positions of silicon dioxide substrate is all attached with metal film; The anti-reflection structure of sub-wavelength of metal umbrella plug comprises umbrella handle and canopy, and described umbrella handle is positioned at the cylindrical cavity of silicon dioxide projection.
2. having the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug as claimed in claim 1, it is characterized in that: solar cell grid is distributed with multiple metal umbrella plug, is the periodic two-dimensional battle array structure of 200nm*200nm when overlooking.
3. there is the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug as claimed in claim 1, it is characterized in that: the thickness of described metal film is less than the height of silicon dioxide projection.
4. there is the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug as claimed in claim 1, it is characterized in that: described umbrella handle radius is the half of the radius of cylindrical cavity.
5. there is the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug as claimed in claim 1, it is characterized in that: the thickness of described metal film is 30nm, the height of described silicon dioxide projection is 40nm, and the radius of described cylindrical cavity is 35nm.
6. there is the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug as claimed in claim 1, it is characterized in that: described umbrella handle height 40nm, radius 25nm.
7. there is the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug as claimed in claim 1, it is characterized in that: described canopy height 40nm, the circle of to be radius be in bottom surface 70nm.
8. there is the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug as claimed in claim 1, it is characterized in that: maximum transmission rate can reach 87%.
9. one kind has the manufacture method of the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug, it is characterized in that: adopt nanometer embossing, be installed with standby by the programme controlled electron beam of computer nanometer of writing direct, the coining plate of the designed pattern of preparation, the template of the metal film part of first preparation except silicon dioxide projection and umbrella plug, the rear template preparing silicon dioxide projection, prepare independent umbrella plug template again, then by graph transfer printing to being coated on suprabasil photoresist, etch on substrate finally by ion milling, form a kind of anti-reflection solar cell grid structure of sub-wavelength umbrella that there is umbrella and live.
10. one kind has the manufacture method of the solar cell grid of the anti-reflection structure of sub-wavelength of umbrella plug, it is characterized in that: first made the mask plate with layout by computer-controlled electron beam lithography, utilize photoetching technique by mask exposure by graph transfer printing to being coated on on-chip photoresist, by ion beam etching, photoengraving glue pattern is successively shifted again, form a kind of anti-reflection structure of sub-wavelength period with umbrella plug.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510189172.2A CN104779306B (en) | 2015-04-21 | 2015-04-21 | Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510189172.2A CN104779306B (en) | 2015-04-21 | 2015-04-21 | Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure |
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| CN104779306A true CN104779306A (en) | 2015-07-15 |
| CN104779306B CN104779306B (en) | 2017-02-01 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655719A (en) * | 2016-01-07 | 2016-06-08 | 内蒙古科技大学 | Electromagnetic wave transmission enhancement device |
| CN112802913A (en) * | 2021-01-11 | 2021-05-14 | 浙江师范大学 | Surface-textured solar glass self-cleaning anti-reflection structure and method |
| CN112968293A (en) * | 2021-03-16 | 2021-06-15 | 山东大学 | Terahertz device based on enhanced abnormal optical transmission and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184995A (en) * | 2011-03-23 | 2011-09-14 | 东南大学 | Long-range plasmon waveguide array synergy unit for solar cell |
| CN102612754A (en) * | 2009-11-18 | 2012-07-25 | 国际商业机器公司 | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
| CN104198434A (en) * | 2014-08-20 | 2014-12-10 | 中山大学 | Vertical transmission type localized plasma resonance refractive index sensor and preparation method thereof |
| CN104485366A (en) * | 2014-11-28 | 2015-04-01 | 瑞德兴阳新能源技术有限公司 | Metal electrode for solar cell |
-
2015
- 2015-04-21 CN CN201510189172.2A patent/CN104779306B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102612754A (en) * | 2009-11-18 | 2012-07-25 | 国际商业机器公司 | Holey electrode grids for photovoltaic cells with subwavelength and superwavelength feature sizes |
| CN102184995A (en) * | 2011-03-23 | 2011-09-14 | 东南大学 | Long-range plasmon waveguide array synergy unit for solar cell |
| CN104198434A (en) * | 2014-08-20 | 2014-12-10 | 中山大学 | Vertical transmission type localized plasma resonance refractive index sensor and preparation method thereof |
| CN104485366A (en) * | 2014-11-28 | 2015-04-01 | 瑞德兴阳新能源技术有限公司 | Metal electrode for solar cell |
Non-Patent Citations (2)
| Title |
|---|
| 刘瑞宏: "基于纳米压印技术的亚波长抗反射结构的工艺研究", 《上海交通大学硕士学位论文》 * |
| 薛静: "亚波长金属孔阵表面等离子体增强透射现象的研究", 《复旦大学硕士学位论文》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105655719A (en) * | 2016-01-07 | 2016-06-08 | 内蒙古科技大学 | Electromagnetic wave transmission enhancement device |
| CN112802913A (en) * | 2021-01-11 | 2021-05-14 | 浙江师范大学 | Surface-textured solar glass self-cleaning anti-reflection structure and method |
| CN112968293A (en) * | 2021-03-16 | 2021-06-15 | 山东大学 | Terahertz device based on enhanced abnormal optical transmission and preparation method thereof |
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| CN104779306B (en) | 2017-02-01 |
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