CN104779136A - Method and equipment for removing photoresist - Google Patents
Method and equipment for removing photoresist Download PDFInfo
- Publication number
- CN104779136A CN104779136A CN201410012432.4A CN201410012432A CN104779136A CN 104779136 A CN104779136 A CN 104779136A CN 201410012432 A CN201410012432 A CN 201410012432A CN 104779136 A CN104779136 A CN 104779136A
- Authority
- CN
- China
- Prior art keywords
- photoresist
- stripping
- remove
- atmospheric plasma
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
Abstract
The invention provides a method for removing photoresist, comprising the following steps: applying photoresist to perform channel doping on low-temperature polycrystalline silicon; bubbling in gas to form a plasma by an atmospheric plasma processing device, and ashing the photoresist; removing organic residues; and stripping the photoresist by a stripping device. The invention further provides a piece of equipment for removing photoresist. By adopting the method of the invention, the time for photoresist removing can be effectively reduced, the process can be simplified, the production efficiency can be improved, the purchase cost and maintenance cost of equipment can be reduced, and the production cost can be lowered.
Description
Technical field
The present invention relates to semiconductor applications, particularly a kind of method and apparatus removing photoresist.
Background technology
Need to carry out channel doping in the manufacturing process of low temperature polycrystalline silicon (LTPS), in channel doping process, due to high-octane impact when photoresist is subject to ion implantation, some that can cause chemical property change, and are difficult to removal when causing photoresist to be peeled off.
Usually needed to carry out ashing process to photoresist, to remove the photoresist of certain thickness envenomation before stripping.
Ashing process is carried out usually in Drycorrosion apparatus, passes into a small amount of gas and carry out ashing under independently airtight vacuum.So not only increase by one technique, make technique become complicated, and can take Drycorrosion apparatus production capacity, even need to set up chamber and the increase that causes equipment purchase expense.In addition, in Drycorrosion apparatus, carry out ashing process need to carry out under vacuum conditions, the vacuum degree reaching regulation needs the longer time, has thus added the time (process added the time of transmission more than 2 hours usually) of operation, has reduced production efficiency.
Therefore, need a kind of method efficiently removing photoresist, simplify ashing treatment process, save the time needed for vacuum degree reaching regulation, thus enhance productivity and reduce production cost.
Utilize Drycorrosion apparatus to carry out ashing process in prior art, have that the processing time is long, technological process is complicated, device acquisition expenses and the problem such as maintenance cost is higher, therefore ashing processing and utilizing atmospheric plasma processes device of the present invention carries out.
Plasma is called again electricity slurry, the ionized gas shape material that the positron-electron that atom after being deprived of by portions of electronics and atom are ionized rear generation forms, it is extensively present in universe, is often considered to be outside removing solid, liquid, gas, the 4th state that material exists.Plasma is a kind of well electric conductor, utilize can catch through the magnetic field of ingehious design, mobile and accelerate plasma.Plasma physics develop into material, the energy, information, environment space, space physics, new technology and technique are put forward in further developing of the science such as geophysics.
The basic discharge type of atmosphere plasma jet is dielectric barrier discharge, simultaneously because there is quick flow to blow, the existence of air-flow can suppress the problem that in discharge process, issuable discharge channel is too concentrated further, is conducive to producing one and stablizes and uniform discharge type; In addition, blowing of air-flow can derive discharge space region some active components of discharge space generation, excited state particle, even charged particle, so just can realize being separated of region of discharge and working region, make this discharge plasma generator have larger practicality.
The inventive method atmospheric plasma processes device used comprises gas flow controller, top electrode, bottom electrode, plasma jet and conveyer belt.
Gas flow controller, for controlling the flow of gas, makes gas pass between top electrode and bottom electrode with predetermined flow.
Top electrode and bottom electrode are connected RF (radio frequency) power supply respectively, for forming stable plasma, usually be 13.56MHz by the frequency setting of top electrode, be 3.2MHz by the frequency setting of bottom electrode, by applying certain radio-frequency power at upper/lower electrode thus be plasma by the gas transition passed into, the radio-frequency power of top electrode is set greater than 1000KW, and the radio-frequency power of bottom electrode is set greater than 500KW.
Plasma jet is arranged on the bottom electrode, for the gas of plasmoid being ejected into the substrate above conveyer belt, thus carries out ashing process.
Conveyer for transmitting substrate, and is connected with the conveyer of stripping off device, makes substrate can incessantly by atmospheric plasma processes device and stripping off device.
Need improve the pressure of plasma system to improve cleaning effect, the operating pressure of atmospheric plasma processes device of the present invention and the pressure of device internal cavity are not less than 10
-3holder, is preferably 10
-3~ 10
-2holder, obtains better treatment effect with this.
If Power supply is smooth, the gas of any kind can form atmosphere plasma, just under the condition of the energy limited, how to form stable plasma and be only key, other necessary performance will be considered in addition, as hydrophily etc., with the surface treatment effect shown for benchmark, and then selected gas used.
Mainly use the inert gas such as argon gas (Ar) or helium (He) in many gases of vacuum plasma system, its reason is that low-voltage/power conditions can create stable plasma.Atmospheric pressure plasma has different pressure with vacuum system plasma, so the use amount of gas is a lot, uses merely argon gas (Ar) or helium (He) significantly to raise the cost.
In the present invention, the gas for the formation of atmosphere plasma can be selected from hydrogen, oxygen, nitrogen or its combination in any, usually selects lower-cost hydrogen and oxygen.
When gas used is the mist of hydrogen and oxygen, its reaction mechanism is as follows: the electronics in accelerate plasma, makes electronics and oxygen, hydrogen reaction produce oxygen atom, ozone and hydrogen atom, such as formula (1) ~ (3).The reactivity of these particles is very strong, collides and namely reacts, and generate stable hydrocarbon molecules, carbon oxygen molecule or hydrone, such as formula (4), (5) with the organic molecule of body surface.The reactivity of oxygen atom is stronger than hydrogen atom, therefore can prioritizing selection oxygen plasma in the clean applications of major part.
e
-+H
2→2H (1)
e
-+O
2→2O (2)
O+O
2→O
3(3)
H(g)+CnH
2n+2(s)→CH
4(g) (4)
O(g)+CnH
2n+2(s)→CO(g)+CH
xO
y(g)+H
2O(g) (5)
In addition, in atmospheric plasma process process, can ultraviolet light be produced simultaneously, in conjunction with above-mentioned chemical reaction, there is good surface cleaning effect.
In the mist of hydrogen and oxygen, the flow of hydrogen is preferably 500 ~ 1000sccm, and the flow of oxygen is preferably 1000 ~ 2000sccm, and flow is too low, is not enough to provide enough plasmas.
Method of the present invention also comprises and utilizes stripping off device, carries out lift-off processing, to remove photoresist completely to the photoresist after ashing.
In order to obtain stable good peeling effect, in current industry, the main solvent system stripper that uses is peeled off.Due to the composition containing ammonium general in solvent system stripper, and OH-(basic ion) meeting that ammonium hydrolysis generates and the metal reaction in grid, cause corrosion of metals, affect product quality, therefore general stripping technology usually all can use isopropyl alcohol (IPA) to carry out the displacement of stripper after stripping unit, peel off to remove the organic principle that glass baseplate surface is remaining afterwards, and prevent the stripper on substrate in the corrosion of metals that rinsing bowl is hydrolyzed afterwards and metal reaction causes.
Stripping off device of the present invention can comprise peel groove, isopropanol bath, rinsing bowl and dry slot.Peel groove is used for providing stripper, and to remove photoresist, stripper wherein used comprises MEA and BDG; Isopropanol bath, for replacing stripper, peels off the remaining organic principle of rear glass baseplate surface to remove; Rinsing bowl for cleaning glass substrate, to remove remaining isopropyl alcohol; Dry slot is used for dry glass substrate and removes moisture.
In the technique of removal photoresist known at present, Drycorrosion apparatus need be first utilized to carry out ashing, then substrate is taken out from Drycorrosion apparatus, put into stripping off device again, such meeting is carried out taking-up repeatedly and is put into action in multiple chamber, and technique is comparatively loaded down with trivial details, utilizes the ashing of Drycorrosion apparatus to carry out under vacuum conditions simultaneously, greatly extend the time of ashing process, and be equipped with the acquisition expenses of vacuum system and maintenance cost higher.
Method of the present invention adopts atmospheric plasma processes device alternative dry etching device to carry out ashing, and middle atmospheric plasma processes device can be connected with stripping off device, same conveyer is utilized to make glass substrate carry out ashing and lift-off processing continuously, thus the artificial transfer avoided between chamber, reduce technological process, improve the continuity of technique, enhance productivity, method of the present invention does not need vacuum system simultaneously, substantially reduce the time of ashing process, and decrease equipment purchasing expense and maintenance cost, reduce production cost.
Unless otherwise defined, term used herein is the implication that those skilled in the art understand usually.
By the following examples the present invention is described in further detail.
Summary of the invention
On the one hand, the invention provides a kind of method removing photoresist, comprising:
Painting photoresist carries out channel doping to low temperature polycrystalline silicon;
Utilize atmospheric plasma processes device, pass into gas and form plasma, ashing process is carried out to described photoresist;
Remove organic remains; And
Utilize stripping off device, lift-off processing is carried out to photoresist.
In a preferred implementation of the inventive method, described atmospheric plasma processes device comprises top electrode and bottom electrode, and the frequency of described top electrode is 13.56MHz, and the frequency of described bottom electrode is 3.2MHz.
In another preferred implementation of the inventive method, the RF power setting of described top electrode is at more than 1000KW, and the RF power setting of described bottom electrode is at more than 500KW.
In another preferred implementation of the inventive method, the operating air pressure of described atmospheric plasma processes device is set as 10
-3~ 10
-2holder.
In another preferred implementation of the inventive method, the time of carrying out ashing process is 25 ~ 300 seconds.
In another preferred implementation of the inventive method, the time of carrying out ashing process is 120 ~ 200 seconds.
In another preferred implementation of the inventive method, described gas is the mist of hydrogen and oxygen.
In another preferred implementation of the inventive method, in the mist of described hydrogen and oxygen, the flow of hydrogen is 500sccm, and the flow of oxygen is 1000sccm.
On the other hand, the present invention also provides a kind of equipment removing photoresist, comprises for the formation of plasma and carries out the atmospheric plasma processes device of ashing process and the stripping off device for carrying out lift-off processing to the photoresist after ashing to photoresist.
In a preferred implementation of present device, described stripping off device comprises peel groove, isopropanol bath, rinsing bowl and dry slot.
Adopt method of the present invention, effectively can reduce the time of removing photoresist, simplification of flowsheet, enhances productivity, and reduces equipment purchasing expense and maintenance cost simultaneously, reduces production cost.
Embodiment
According to specific embodiment, technical scheme of the present invention is described further below.Protection scope of the present invention is not limited to following examples, enumerates these examples and does not only limit the present invention in any way for exemplary purpose.
In a preferred embodiment of the present invention, a kind of method removing photoresist is provided, comprises: painting photoresist carries out channel doping to low temperature polycrystalline silicon; Utilize atmospheric plasma processes device, pass into gas and form plasma, ashing process is carried out to described photoresist; Remove organic remains; And utilize stripping off device, lift-off processing is carried out to photoresist.
In channel doping process, due to high-octane impact when photoresist is subject to ion implantation, some that can cause chemical property change, and namely can go bad in photoresist surface.The method of removal photoresist of the present invention first carries out ashing process, to remove the photoresist of certain thickness envenomation, carries out lift-off processing more afterwards, to remove remaining photoresist.
At painting photoresist and carry out exposing, in the process of developing, substrate surface can leave organic remains, and the such as oxygen radical of plasma generation can be utilized while ashing process to remove above-mentioned organic remains.
Embodiment
Embodiment 1
Chemical vapour deposition technique is adopted to form the resilient coating of silica and silicon nitride layer stack structure on the glass substrate.
Chemical vapour deposition technique is adopted to form amorphous silicon layer on the buffer layer.
Utilize quasi-molecule laser annealing (ELA) to change amorphous silicon layer into polysilicon layer, and patterning is carried out to polysilicon layer.
Painting photoresist on polysilicon layer after patterning, carries out exposing, developing and channel doping, forms source area and drain region.
Then remove photoresist, first set the parameter of atmospheric plasma processes device, be 13.56MHz by the frequency setting of top electrode, radio-frequency power is set as 1000W; Be 3.2MHz by the frequency setting of bottom electrode, radio-frequency power is set as 500W; Operating pressure is adjusted to 10 simultaneously
-3holder.
In atmospheric plasma processes device, the hydrogen of 500sccm and the oxygen of 1000sccm is passed into by gas flow controller.
Be positioned on conveyer belt by substrate afterwards, slowly through atmospheric plasma processes device, carry out ashing process, remove the photoresist of certain thickness envenomation, remove the organic remains on substrate, the time of ashing process is 120 seconds simultaneously.
Finally direct substrate transmission is entered stripping off device, successively by peel groove, isopropanol bath, rinsing bowl and dry slot, carry out lift-off processing, remove remaining photoresist, thus remove photoresist completely.
Embodiment 2
Chemical vapour deposition technique is adopted to form the resilient coating of silica and silicon nitride layer stack structure on the glass substrate.
Chemical vapour deposition technique is adopted to form amorphous silicon layer on the buffer layer.
Utilize quasi-molecule laser annealing (ELA) to change amorphous silicon layer into polysilicon layer, and patterning is carried out to polysilicon layer.
Painting photoresist on polysilicon layer after patterning, carries out exposing, developing and channel doping, forms source area and drain region.
Then remove photoresist, first set the parameter of atmospheric plasma processes device, be 13.56MHz by the frequency setting of top electrode, radio-frequency power is set as 1000W; Be 3.2MHz by the frequency setting of bottom electrode, radio-frequency power is set as 500W; Operating pressure is adjusted to 10 simultaneously
-2holder.
In atmospheric plasma processes device, the hydrogen of 500sccm and the oxygen of 1000sccm is passed into by gas flow controller.
Be positioned on conveyer belt by substrate afterwards, slowly through atmospheric plasma processes device, carry out ashing process, remove the photoresist of certain thickness envenomation, remove the organic remains on substrate, the time of ashing process is 200 seconds simultaneously.
Finally direct substrate transmission is entered stripping off device, successively by peel groove, isopropanol bath, rinsing bowl and dry slot, carry out lift-off processing, remove remaining photoresist, thus remove photoresist completely.
In sum, adopt method of the present invention, effectively can reduce the time of removing photoresist, simplification of flowsheet, enhances productivity, and reduces equipment purchasing expense and maintenance cost simultaneously, reduces production cost.
Those skilled in the art it should be noted that execution mode described in the invention is only exemplary, can make other replacements various, changes and improvements within the scope of the invention.Thus, the invention is not restricted to above-mentioned execution mode, and be only defined by the claims.
Claims (10)
1. remove a method for photoresist, comprising:
Painting photoresist carries out channel doping to low temperature polycrystalline silicon;
Utilize atmospheric plasma processes device, pass into gas and form plasma, ashing process is carried out to described photoresist;
Remove organic remains; And
Utilize stripping off device, lift-off processing is carried out to photoresist.
2. method according to claim 1, wherein said atmospheric plasma processes device comprises top electrode and bottom electrode, and the frequency of described top electrode is 13.56MHz, and the frequency of described bottom electrode is 3.2MHz.
3. method according to claim 2, the RF power setting of wherein said top electrode is at more than 1000KW, and the RF power setting of described bottom electrode is at more than 500KW.
4. method according to claim 3, the operating air pressure of wherein said atmospheric plasma processes device is set as 10
-3~ 10
-2holder.
5. method according to claim 4, the time of wherein carrying out ashing process is 25 ~ 300 seconds.
6. method according to claim 5, the time of wherein carrying out ashing process is 120 ~ 200 seconds.
7. the method any one of claim 1 to 6, wherein said gas is the mist of hydrogen and oxygen.
8. method according to claim 7, in the mist of described hydrogen and oxygen, the flow of hydrogen is 500sccm, and the flow of oxygen is 1000sccm.
9. remove an equipment for photoresist, comprise for the formation of plasma and the atmospheric plasma processes device of ashing process and the stripping off device for carrying out lift-off processing to the photoresist after ashing are carried out to photoresist.
10. equipment according to claim 9, wherein said stripping off device comprises peel groove, isopropanol bath, rinsing bowl and dry slot.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410012432.4A CN104779136A (en) | 2014-01-10 | 2014-01-10 | Method and equipment for removing photoresist |
| TW103105079A TW201527906A (en) | 2014-01-10 | 2014-02-17 | Method and apparatus for removing photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410012432.4A CN104779136A (en) | 2014-01-10 | 2014-01-10 | Method and equipment for removing photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104779136A true CN104779136A (en) | 2015-07-15 |
Family
ID=53620547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410012432.4A Pending CN104779136A (en) | 2014-01-10 | 2014-01-10 | Method and equipment for removing photoresist |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104779136A (en) |
| TW (1) | TW201527906A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000030165A1 (en) * | 1998-11-13 | 2000-05-25 | Mitsubishi Denki Kabushiki Kaisha | Method and device for removing photoresist film |
| CN1720349A (en) * | 2002-12-02 | 2006-01-11 | 希姆科技有限公司 | Apparatus for treating surfaces of a substrate with atmospheric pressure plasma |
| CN101331594A (en) * | 2006-06-22 | 2008-12-24 | 里巴贝鲁株式会社 | Processing device, processing method, and plasma source |
| US20100071718A1 (en) * | 2008-09-19 | 2010-03-25 | Imec | Method for Removing a Hardened Photoresist |
| JP2011008848A (en) * | 2009-06-24 | 2011-01-13 | Hitachi Global Storage Technologies Netherlands Bv | Method for removing resist and method for manufacturing magnetic recording medium |
-
2014
- 2014-01-10 CN CN201410012432.4A patent/CN104779136A/en active Pending
- 2014-02-17 TW TW103105079A patent/TW201527906A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000030165A1 (en) * | 1998-11-13 | 2000-05-25 | Mitsubishi Denki Kabushiki Kaisha | Method and device for removing photoresist film |
| CN1720349A (en) * | 2002-12-02 | 2006-01-11 | 希姆科技有限公司 | Apparatus for treating surfaces of a substrate with atmospheric pressure plasma |
| CN101331594A (en) * | 2006-06-22 | 2008-12-24 | 里巴贝鲁株式会社 | Processing device, processing method, and plasma source |
| US20100071718A1 (en) * | 2008-09-19 | 2010-03-25 | Imec | Method for Removing a Hardened Photoresist |
| JP2011008848A (en) * | 2009-06-24 | 2011-01-13 | Hitachi Global Storage Technologies Netherlands Bv | Method for removing resist and method for manufacturing magnetic recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201527906A (en) | 2015-07-16 |
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Application publication date: 20150715 |
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