CN104767488A - Frequency doubling device based on crystal oscillator circuit - Google Patents
Frequency doubling device based on crystal oscillator circuit Download PDFInfo
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- CN104767488A CN104767488A CN201510213811.4A CN201510213811A CN104767488A CN 104767488 A CN104767488 A CN 104767488A CN 201510213811 A CN201510213811 A CN 201510213811A CN 104767488 A CN104767488 A CN 104767488A
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Abstract
The invention discloses a frequency doubling device based on a crystal oscillator circuit. The frequency doubling device further comprises inductors, capacitors and a plurality of cascaded transistor circuits besides an existing crystal oscillator circuit structure, wherein the inductors and the capacitors can achieve frequency selection, and the transistor circuits can achieve the frequency doubling effect. According to the frequency doubling device, appropriate active devices, the capacitors and the inductors are additionally arranged in the crystal oscillator circuit, frequency output of any multiple of the crystal fundamental frequency can be obtained, phase noise of high-frequency time base signals or high-frequency reference clock signals output by the frequency doubling device is basically identical to the phase noise of a fundamental crystal oscillator, and the requirement of a high-performance system for the phase noise of the time base signals or the phase noise of the high-frequency reference clock signals can be met.
Description
Technical field
The present invention relates to pierce circuit field, in particular, relate to a kind of frequency doubling device based on crystal-oscillator circuit.
Background technology
Base or reference clock signal when pierce circuit can produce stable, produce or system clock for the local oscillation signal in communicating.Fig. 1 is a kind of general integrated crystal oscillator circuit structure figure, and as shown in Figure 1, it comprises P-type crystal pipe M1, N-type transistor M2, load capacitance C1 and C2, resistance R0 and crystal, and the two ends of crystal are respectively X1 and X2.Its operation principle is: the transistor circuit that N-type transistor M2 and P-type crystal pipe M1 forms is by the feedback of resistance R0, form amplifier, for the loop of active circuit and crystal composition provides the gain requirement met needed for crystal oscillation, also be vibration and energy is provided, and load capacitance C1 and C2 meets the phase requirements needed for crystal oscillation by travel(l)ing phase.Wherein, the N-type transistor M2 in transistor circuit with the connected mode of P-type crystal pipe M1 is: the source of P-type crystal pipe M1 is connected supply voltage with substrate, and grid end connects the X1 end of crystal, and drain terminal connects the X2 end of crystal; The source of N-type transistor M2 is connected ground with substrate, grid end connects the X1 end of crystal, and drain terminal connects the X2 end of crystal.
Crystal oscillating circuit shown in Fig. 1 can only produce the fundamental oscillation signal that crystal self character determines, usually all can only produce about 50MHz or following time-base signal or reference clock signal.And in optical communication and high-speed communication, in order to ensure better communication performance, often need time-base signal or the reference clock signal of higher frequency (such as more than 100MHz).Because the cost of high-frequency fundamental crystal own is very high, therefore in prior art, in order to obtain reference clock or the time-base signal of higher frequency, the mode of usual employing frequency synthesis, but, the high-frequency time-base signal adopting the mode of frequency synthesis to obtain or the phase noise of reference clock signal larger, the requirement of high performance system to time-base signal or reference clock signal can not be met.
Summary of the invention
In view of this, the invention provides a kind of frequency doubling device based on crystal-oscillator circuit, with the problem that the phase noise overcoming the high-frequency time-base signal got or the reference clock signal caused owing to adopting the method for frequency synthesis to obtain high-frequency signal in prior art is high.
For achieving the above object, the invention provides following technical scheme:
Based on a frequency doubling device for crystal-oscillator circuit, comprise the transistor circuit of crystal, the first resistance, the first electric capacity, the second electric capacity, the 3rd electric capacity, the first inductance and K cascade; K be not less than 2 positive integer;
Wherein, the first end of described first resistance connects the first end of crystal, and the second end connects the second end of crystal; The first end of described first electric capacity connects the first end of crystal, the second end ground connection; The first end of described second electric capacity connects the second end of crystal, the second end ground connection; The first end of described first inductance connects supply voltage, and the second end connects the output of described frequency doubling device; The first end of described 3rd electric capacity connects supply voltage, and the second end connects the output of described frequency doubling device; The output of described frequency doubling device is in the K transistor circuit the longest apart from described crystal circuit, the line end be connected with the source of P-type crystal pipe;
Described transistor circuit comprises: P-type crystal pipe and N-type transistor; Described P-type crystal pipe is connected with the first end of described crystal with the grid end of N-type transistor, and drain terminal is connected with the second end of described crystal;
In active situation, each transistor circuit, by the feedback of described first resistance, forms amplifier, the transistor circuit of K cascade is by the cascade of K group amplifier, realize the mixing operations of signal, obtain K frequency-doubled signal, described K frequency-doubled signal is exported by the output of described frequency doubling device.
Optionally, in the first transistor circuit that described in the transistor circuit middle distance of a described K cascade, crystal circuit is the shortest, the source of P-type crystal pipe connects the source of N-type transistor in the transistor seconds circuit adjacent with described the first transistor circuit; The source ground connection of the N-type transistor of described the first transistor circuit.
Optionally, in the K transistor circuit that described in the transistor circuit middle distance of a described K cascade, crystal circuit is the longest, the connecting line of the source of P-type crystal pipe is the output after described frequency doubling device K frequency multiplication; The source of N-type transistor connects the source of P-type crystal pipe in the K-1 transistor circuit adjacent with described K transistor circuit.
Optionally, in the transistor circuit of a described K cascade, the Substrate ground of all N-type transistor or connect low-voltage.
Optionally, in the transistor circuit of a described K cascade, the substrate of all P-type crystal pipes connects the source of N-type transistor or connects high voltage.
Optionally, in the transistor circuit of a described K cascade, except the K transistor circuit the longest apart from described crystal circuit, the source of the P-type crystal pipe in any one transistor circuit L is connected to the source of the N-type transistor of L+1 transistor circuit.
Optionally, described first resistance is adjustable resistance; Described first electric capacity, the second electric capacity and the 3rd electric capacity are tunable capacitor; Described first inductance is controllable impedance.
Known via above-mentioned technical scheme, compared with prior art, the embodiment of the invention discloses a kind of frequency doubling device based on crystal-oscillator circuit, described frequency doubling device is except the structure of existing crystal-oscillator circuit, also comprise the inductance and electric capacity that can realize He Ne laser, and multiple transistor circuits of cascade of times yupin effect can be realized.This frequency doubling device by increasing suitable active device and electric capacity, inductance in crystal-oscillator circuit, the rate-adaptive pacemaker of the crystal fundamental of any multiple can be obtained, and the phase noise of the high-frequency time-base signal exported through described frequency doubling device or reference clock signal is basic identical with the phase noise of fundamental crystal oscillator, the requirement of high performance system to the phase noise of time-base signal or reference clock signal can be met.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments of the invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to the accompanying drawing provided.
Fig. 1 is a kind of general integrated crystal oscillator circuit structure figure;
Fig. 2 is the disclosed circuit structure diagram based on the frequency doubling device of crystal oscillating circuit of the embodiment of the present invention;
The structural representation of Fig. 33 frequency doubling devices disclosed in the embodiment of the present invention;
Fig. 4 is the signal transient design sketch of the crystal oscillator frequency multiplier circuit of 3 frequency doubling devices shown in Fig. 3;
Fig. 5 is the partial enlargement design sketch of signal in Fig. 4;
Fig. 6 is the phase noise effect figure of crystal-oscillator circuit in 3 frequency doubling devices shown in Fig. 3.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 2 is the disclosed circuit structure diagram based on the frequency doubling device of crystal oscillating circuit of the embodiment of the present invention, shown in Figure 2, described frequency doubling device can comprise: the transistor circuit M of crystal X, the first resistance R1, the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the first inductance L 1 and K cascade.
Wherein, described K be not less than 2 positive integer.
Wherein, the first end of described first resistance R1 connects the first end X1 of crystal, and the second end connects the second end X2 of crystal; The first end of described first electric capacity C1 connects the first end X1 of crystal, the second end ground connection; The first end of described second electric capacity C2 connects the second end X2 of crystal, the second end ground connection; The first end of described first inductance L 1 connects supply voltage VDD, and the second end connects the output Krd of described frequency doubling device; The first end of described 3rd electric capacity C3 connects supply voltage VDD, and the second end connects the output Krd of described frequency doubling device.The output of described frequency doubling device is in the K transistor circuit the longest apart from described crystal circuit, the line end be connected with the far-end of P-type crystal pipe.
Described transistor circuit M comprises P-type crystal pipe and N-type transistor, and described P-type crystal pipe is connected with the first end of described crystal with the grid end of N-type transistor, and drain terminal is connected with the second end of described crystal.
In active situation, each transistor circuit, by the feedback of described first resistance, forms amplifier, the transistor circuit of K cascade is by the cascade of K group amplifier, realize the mixing operations of signal, obtain K frequency-doubled signal, described K frequency-doubled signal is exported by the output of described frequency doubling device.
For the ease of understanding the frequency doubling device based on crystal-oscillator circuit disclosed in the embodiment of the present invention, below to comprise the frequency doubling device introduction of the transistor circuit M of 3 cascades.The structural representation of Fig. 33 frequency doubling devices disclosed in the embodiment of the present invention, shown in Figure 3, the frequency doubling device shown in Fig. 3 is by N-type transistor M1, M3 and M5, and P-type crystal pipe M2, M4 and M6, inductance L 1, resistance R1, electric capacity C1, C2 and C3 and crystal formed.In order to illustrative clarity, N-type transistor M5 is connected omission with the substrate of M3, they all connect (GND).Their annexation is as follows: one end of inductance L x connects supply voltage (VDD), and the other end connects the output 3rd after 3 frequencys multiplication; One end of electric capacity C3 connects supply voltage (VDD), and the other end connects the output 3rd after 3 frequencys multiplication; The source of P-type crystal pipe M6 is connected output 3rd with substrate, and its grid end connects the X1 end of crystal, and its drain terminal connects the X2 end (being also fundamental frequency output 1st) of crystal; The source of N-type transistor M5 connects source and the substrate of P-type crystal pipe M4, and its substrate connects ground (GND), and its grid end connects the X1 end of crystal, and its drain terminal connects the X2 end (also i.e. fundamental frequency output 1st) of crystal; The source of P-type crystal pipe M4 is connected the source of N-type transistor M5 with substrate, its grid end connects the X1 end of crystal, and its drain terminal connects the X2 end (being also fundamental frequency output 1st) of crystal; The source of N-type transistor M3 connects source and the substrate of P-type crystal pipe M2, and its substrate connects ground (GND), and its grid end connects the X1 end of crystal, and its drain terminal connects the X2 end (also i.e. fundamental frequency output 1st) of crystal; The source of P-type crystal pipe M2 is connected the source of N-type transistor M3 with substrate, its grid end connects the X1 end of crystal, and its drain terminal connects the X2 end (being also fundamental frequency output 1st) of crystal; The source of N-type transistor M1 is connected ground (GND) with substrate, its grid end connects the X1 end of crystal, and its drain terminal connects the X2 end (also i.e. fundamental frequency output 1st) of crystal; One end of resistance R1 connects the X1 end of crystal, and its other end connects the X2 end (being also fundamental frequency output 1st) of crystal; One end of electric capacity C1 connects the X1 end of crystal, its other end ground connection (GND); One end of electric capacity C2 connects the X2 end (being also fundamental frequency output 1st) of crystal, its other end ground connection (GND); The two ends of crystal are then connected to X1 end and X2 end.
The operation principle of the crystal oscillator frequency multiplier circuit of 3 frequency doubling devices shown in Fig. 3 is as follows: electric capacity C1 and C2 provides phase compensation for crystal oscillating circuit, and M1 and M2, M3 and M4, M5 and M6 forms three transistor circuit M, there is provided biased by resistance R1 and realize three gain amplifiers, and then realize crystal oscillating circuit.Due to three groups of gain amplifier cascades (as three transistor circuit M in Fig. 3), be equivalent to carry out mixing operations to signal, owing to having 3 groups of identical transistor circuit M, and the input and output of this 3 group transistor circuit M connect identical, in fact just achieve 3 frequencys multiplication of signal.The signal of 3 frequencys multiplication carries out He Ne laser by L1 and C3, and is exported by 3rd end.
Thus, can determine, in the first transistor circuit that described in the transistor circuit middle distance of a described K cascade, crystal circuit is the shortest, the source of P-type crystal pipe connects the source of N-type transistor in the transistor seconds circuit adjacent with described the first transistor circuit; The source ground connection of the N-type transistor in described the first transistor circuit.
In the K transistor circuit M that described in the transistor circuit M middle distance of a described K cascade, crystal circuit is the longest, the connecting line of the source of P-type crystal pipe is the output after described frequency doubling device K frequency multiplication; The source of N-type transistor connects the source of P-type crystal pipe in the K-1 transistor circuit M adjacent with described K transistor circuit M.
In the transistor circuit M of a described K cascade, the Substrate ground of all N-type transistor or connect low-voltage.
In the transistor circuit of a described K cascade, the substrate of all P-type crystal pipes connects the source of N-type transistor or connects high voltage.The substrate of different P-type crystal pipes can connect the source of different N-type transistor, as, in order to line clear, in the transistor circuit of K cascade, P-type crystal pipe substrate in the K transistor circuit the longest apart from described crystal circuit directly connects power supply, and the substrate of the P-type crystal pipe in other any one transistor circuits is all connected to that it is adjacent, circuit is away from the source of the N-type transistor of crystal.
In the transistor circuit M of a described K cascade, except the K transistor circuit M the longest apart from described crystal circuit, the source of the P-type crystal pipe in other any one transistor circuit L is connected with substrate, and is connected to the source of the N-type transistor in the L+1 transistor circuit M be adjacent.
Needs illustrate, in figure 3, just with 3 frequency doubling devices exemplarily, in practical application, can design the frequency doubling device of random frequency multiplication as required, want the frequency obtaining a few frequency multiplication, described frequency doubling device just comprises several transistor circuit M.But, consider actual circuit technology, the difference of supply voltage and device parameters characteristic, when realizing the rate-adaptive pacemaker of a certain frequency multiplication numerical value, needs to do the value of the N-type transistor in frequency doubling device, P-type crystal pipe, resistance, inductance, electric capacity and supply voltage rationally to arrange and optimize.
Therefore, in frequency doubling device disclosed in the embodiment of the present invention, described first resistance can be adjustable resistance; Described first electric capacity, the second electric capacity and the 3rd electric capacity can be tunable capacitor; Described first inductance can be controllable impedance.
Discrete digital control mode can be adopted to the adjustment of C3 and L1, also can adopt continuous analog control mode; Can be the collection by circuit performance index parameter to the adjustment of the parameter of supply voltage, active device (length-width ratio as N-type transistor and P-type crystal pipe), resistance R1, electric capacity C1 and resistance C2, adjustment is realized by FEEDBACK CONTROL, also can by discrete mode by the outer control realization adjustment of sheet.
Fig. 4 for the transient effects figure of the crystal oscillator frequency multiplier circuit of 3 frequency doubling devices shown in Fig. 3, Fig. 5 be the partial enlargement design sketch of signal in Fig. 4.Described crystal now in Fig. 3 is the crystal of 40MHz, in Fig. 4 and Fig. 5, transverse axis is time shaft, unit is millisecond (ms), the longitudinal axis is voltage, unit is volt (V), and the first half is the output waveform (signal of 40MHz) of fundamental frequency signal 1st, and the latter half is the output waveform (signal of 40*3=120MHz) of 3 frequency-doubled signal 3rd.Can understand from Fig. 5, frequency doubling device disclosed in the embodiment of the present invention can realize 3 more accurate frequencys multiplication.In like manner, based on technological thought of the present invention, the random frequency multiplication result of satisfied certain accuracy can be realized.
Fig. 6 is the phase noise effect figure of crystal-oscillator circuit in 3 frequency doubling devices shown in Fig. 3.The phase noise performance of the general crystal oscillator on market is as follows in the phase noise performance in 40MHz fundamental frequency situation :-140dBc/Hz@1kHz ,-152dBc/Hz@100kHz.Phase noise data in comparison diagram 6 are known, and the phase noise performance of 3 frequency-doubled signals (40X3=120MHz signal) that the embodiment of the present invention realizes reaches the phase noise performance of fundamental frequency (40MHz signal) crystal oscillator general on market.
In the present embodiment, described frequency doubling device, except the structure of existing crystal-oscillator circuit, also comprises the inductance and electric capacity that can realize He Ne laser, and can realize multiple transistor circuit M of cascade of times yupin effect.This frequency doubling device by increasing suitable active device and electric capacity, inductance in crystal-oscillator circuit, the rate-adaptive pacemaker of the crystal fundamental of any multiple can be obtained, and the phase noise of the high-frequency time-base signal exported through described frequency doubling device or reference clock signal is basic identical with the phase noise of fundamental crystal oscillator, the requirement of high performance system to the phase noise of time-base signal or reference clock signal can be met.
Also it should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the article of a series of key element or equipment not only comprises those key elements, but also comprise other key elements clearly do not listed, or also comprise by this article or the intrinsic key element of equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within the article or equipment comprising described key element and also there is other identical element.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (7)
1. based on a frequency doubling device for crystal-oscillator circuit, it is characterized in that, comprise the transistor circuit of crystal, the first resistance, the first electric capacity, the second electric capacity, the 3rd electric capacity, the first inductance and K cascade; K be not less than 2 positive integer;
Wherein, the first end of described first resistance connects the first end of crystal, and the second end connects the second end of crystal; The first end of described first electric capacity connects the first end of crystal, the second end ground connection; The first end of described second electric capacity connects the second end of crystal, the second end ground connection; The first end of described first inductance connects supply voltage, and the second end connects the output of described frequency doubling device; The first end of described 3rd electric capacity connects supply voltage, and the second end connects the output of described frequency doubling device; The output of described frequency doubling device is in the K transistor circuit the longest apart from described crystal circuit, the line end be connected with the source of P-type crystal pipe;
Described transistor circuit comprises: P-type crystal pipe and N-type transistor; Described P-type crystal pipe is connected with the first end of described crystal with the grid end of N-type transistor, and drain terminal is connected with the second end of described crystal;
In active situation, each transistor circuit, by the feedback of described first resistance, forms amplifier, the transistor circuit of K cascade is by the cascade of K group amplifier, realize the mixing operations of signal, obtain K frequency-doubled signal, described K frequency-doubled signal is exported by the output of described frequency doubling device.
2. frequency doubling device according to claim 1, it is characterized in that, in the first transistor circuit that described in the transistor circuit middle distance of a described K cascade, crystal circuit is the shortest, the source of P-type crystal pipe connects the source of N-type transistor in the transistor seconds circuit adjacent with described the first transistor circuit; The source ground connection of the N-type transistor of described the first transistor circuit.
3. frequency doubling device according to claim 1, it is characterized in that, in the K transistor circuit that described in the transistor circuit middle distance of a described K cascade, crystal circuit is the longest, the connecting line of the source of P-type crystal pipe is the output after described frequency doubling device K frequency multiplication; The source of N-type transistor connects the source of P-type crystal pipe in the K-1 transistor circuit adjacent with described K transistor circuit.
4. frequency doubling device according to claim 1, is characterized in that, in the transistor circuit of a described K cascade, and the Substrate ground of all N-type transistor or connect low-voltage.
5. frequency doubling device according to claim 1, is characterized in that, in the transistor circuit of a described K cascade, the substrate of all P-type crystal pipes connects the source of N-type transistor or connects high voltage.
6. frequency doubling device according to claim 1, it is characterized in that, in the transistor circuit of a described K cascade, except the K transistor circuit the longest apart from described crystal circuit, the source of the P-type crystal pipe in any one transistor circuit L is connected to the source of the N-type transistor of L+1 transistor circuit.
7. frequency doubling device according to claim 1, is characterized in that, described first resistance is adjustable resistance; Described first electric capacity, the second electric capacity and the 3rd electric capacity are tunable capacitor; Described first inductance is controllable impedance.
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| CN201510213811.4A CN104767488B (en) | 2015-04-29 | 2015-04-29 | A kind of frequency doubling device based on crystal-oscillator circuit |
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| CN201510213811.4A CN104767488B (en) | 2015-04-29 | 2015-04-29 | A kind of frequency doubling device based on crystal-oscillator circuit |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5077546A (en) * | 1990-11-07 | 1991-12-31 | General Electric Company | Low phase noise frequency multiplier |
| CN1326264A (en) * | 2000-04-27 | 2001-12-12 | 株式会社东芝 | Frequency multiplier and semiconductor integrated circuit |
| US20030090302A1 (en) * | 2001-11-12 | 2003-05-15 | Hiroyuki Hanamori | Semiconductor integrated circuit characterized by timing adjustment of clock switching control |
| CN1874143A (en) * | 2005-05-31 | 2006-12-06 | 三洋电机株式会社 | Oscillation circuit |
| CN203590156U (en) * | 2013-09-04 | 2014-05-07 | 苏州苏尔达信息科技有限公司 | Frequency multiplication circuit |
-
2015
- 2015-04-29 CN CN201510213811.4A patent/CN104767488B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5077546A (en) * | 1990-11-07 | 1991-12-31 | General Electric Company | Low phase noise frequency multiplier |
| CN1326264A (en) * | 2000-04-27 | 2001-12-12 | 株式会社东芝 | Frequency multiplier and semiconductor integrated circuit |
| US20030090302A1 (en) * | 2001-11-12 | 2003-05-15 | Hiroyuki Hanamori | Semiconductor integrated circuit characterized by timing adjustment of clock switching control |
| CN1874143A (en) * | 2005-05-31 | 2006-12-06 | 三洋电机株式会社 | Oscillation circuit |
| CN203590156U (en) * | 2013-09-04 | 2014-05-07 | 苏州苏尔达信息科技有限公司 | Frequency multiplication circuit |
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