CN104765078A - Multilayer extreme ultraviolet film with heat stability and irradiation damage resistance - Google Patents
Multilayer extreme ultraviolet film with heat stability and irradiation damage resistance Download PDFInfo
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- CN104765078A CN104765078A CN201510190378.7A CN201510190378A CN104765078A CN 104765078 A CN104765078 A CN 104765078A CN 201510190378 A CN201510190378 A CN 201510190378A CN 104765078 A CN104765078 A CN 104765078A
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- extreme ultraviolet
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- thermostable
- heat stability
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
Abstract
The invention discloses a multilayer extreme ultraviolet film with heat stability and irradiation damage resistance and belongs to the technical field of extreme ultraviolet lithography. The multilayer extreme ultraviolet film solves the technical problem that under high-energy laser irradiation and high-energy photo bombardment in long time, the reflectivity of the extreme ultraviolet wave band of an existing multilayer extreme ultraviolet film declines seriously. The multilayer extreme ultraviolet film sequentially comprises a substrate, a period layer and an irradiation damage resisting layer from bottom to top, wherein the number of periods of the period layer is 40-60, each period is composed of a Si layer, a first heat stability layer, a Mo layer and a second heat stability layer which are arranged in sequence from bottom to top, each first heat stability layer and each heat stability layer are both made of B4C and are 0.3-0.5 nm thick, and each irradiation damage resisting layer is made of TiN or SiO2 and is 1-3 nm thick. The multilayer extreme ultraviolet film can improve the imaging quality of an extreme ultraviolet lithography reflector system and prolong the service life of the extreme ultraviolet lithography reflector system, and the reflectivity of the extreme ultraviolet wave band ranges from 69.4% to 72.4%.
Description
Technical field
The invention belongs to extreme ultraviolet photolithographic technical field, be specifically related to a kind of multiplayer films in EUV with thermal stability and radioresistance injury reinforcing.
Background technology
Extreme ultraviolet (EUV) photoetching is the Next Generation Lithography most possibly realizing 22nm technology node.Extreme ultraviolet etching system uses wavelength to be 13.5nm, and at this wave band, the absorption coefficient of most of material is all very high, so can only adopt total-reflection type system.In order to shorten the time shutter further, improving output, needing on optical element, to be coated with high precision multilayer film to improve reflectivity.The Mo/Si multilayer film that in prior art, the multilayer film that extreme ultraviolet waveband is coated with is periodicity is 40, periodic thickness is 7nm.The groundwork wave band of this multiplayer films in EUV is near 13.5nm (98eV), and peak reflectivity can reach more than 68%.But there is following defect in this Mo/Si multilayer film:
First, under the high energy laser irradiation of EUV wave band, film inside can produce highfield, and the membraneous material caused is ionized, and then causes film surface to there will be the hole of ablation shape.Even if multilayer film is under the EUV radiation effects of denier, breakage to a certain degree and hole are also caused in surface, and this can cause the significantly reduction of x-ray reflectivity.
Secondly, because the surface of this multiplayer films in EUV is bombarded for a long time by high-energy photon, multilayer film temperature is caused constantly to raise, under in multilayer film, Mo layer and Si layer are in high temperature action for a long time, material between rete can interpenetrate and even form molybdenum silicides, destroy multilayer film reflex mechanism, cause the degradation of extreme ultraviolet reflectivity.
Summary of the invention
The object of the invention is to solve multiplayer films in EUV of the prior art under long high energy laser irradiation and high-energy photon bombardment, the technical matters of the reflectivity degradation of extreme ultraviolet waveband, provides a kind of multiplayer films in EUV with thermal stability and radioresistance injury reinforcing.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is as follows.
There is the multiplayer films in EUV of thermal stability and radioresistance injury reinforcing, comprise substrate, cycle layer, radioresistance injury reinforcing layer from bottom to up successively;
The number of cycles of described cycle layer is 40-60, each cycle is made up of the Si layer be arranged in order from bottom to up, the first thermostable layer, Mo layer, the second thermostable layer, the thickness of described Si layer is 3.7m-3.9nm, the thickness of Mo layer is 2.3nm-2.5nm, and the material of the first thermostable layer and the second thermostable layer is B
4c, thickness is respectively 0.3nm-0.5nm;
The material of described radioresistance injury reinforcing layer is TiN or SiO
2, thickness is 1nm-3nm.
Further, each periodic thickness of described cycle layer is 7nm.
Further, the surfaceness of described substrate is less than or equal to 0.2nm.
Further, be also provided with the 3rd thermostable layer between described substrate and cycle layer, the material of the 3rd thermostable layer is B
4c, thickness is 0.3nm-0.5nm.
Compared with prior art, the invention has the beneficial effects as follows:
The multiplayer films in EUV with thermal stability and radioresistance injury reinforcing of the present invention is in the profile not changing film system, do not increase optical element, do not increase on the basis of extra procedure of processing yet, thermostable layer and radioresistance injury reinforcing layer is added in existing multi-layer film structure, by the diffusion between reduction multilayer film and the irradiation damage threshold value improving Mo/Si layer, reach the image quality and the object in serviceable life that improve extreme ultraviolet photolithographic mirror system, and add thermostable layer and radioresistance injury reinforcing layer to the loss of the reflectivity of extreme ultraviolet waveband below 5%, negligible.Multilayer film of the present invention is suitable for being applied in the high extreme ultraviolet etching system of irradiation dose, large photon energy.
Accompanying drawing explanation
Fig. 1 is the structural representation with the multiplayer films in EUV of thermal stability and radioresistance injury reinforcing of the present invention;
Fig. 2 is the change curve of reflectivity in 12.8nm-14.2nm wavelength coverage of the multilayer film in embodiment of the present invention 1-6;
Fig. 3 is the partial enlarged drawing in Fig. 2 in 13.3nm-13.8nm wavelength coverage;
Fig. 4 is the thickness of radioresistance injury reinforcing layer and the relation curve of the peak reflectivity of multilayer film in 12.8nm-14.2nm wavelength coverage of multilayer film in embodiment of the present invention 1-6;
In figure, 1, substrate, 2, cycle layer, 21, Si layer, the 22, first thermostable layer, 23, Mo layer, the 24, second thermostable layer, 3, radioresistance injury reinforcing layer.
Embodiment
Below in conjunction with accompanying drawing, the present invention is elaborated further.
As shown in Figure 1, there is the multiplayer films in EUV of thermal stability and radioresistance injury reinforcing, comprise substrate 1, cycle layer 2, radioresistance injury reinforcing layer 3 from bottom to up successively.Wherein, substrate 1 is not particularly limited, and selects this area to commonly use substrate, and the surfaceness of general substrate 1 is less than or equal to 0.2nm.Cycle layer 2 is containing 40-60 cycle, each cycle is four-layer structure, be followed successively by Si layer 21, first thermostable layer 22, Mo layer 23, second thermostable layer 24 from bottom to up, what contact with substrate 1 is Si layer 21, what contact with radioresistance injury reinforcing layer 3 is that the material of the second thermostable layer 24, first thermostable layer 22 and the second thermostable layer 24 is B
4c, thickness is respectively 0.3nm-0.5nm, and preferred thickness is equal, and the material of Si layer 21 is Si, and thickness is generally 3.7nm-3.9nm, and the material of Mo layer 23 is Mo, and thickness is 2.3nm-2.5nm, and the periodic thickness of cycle layer is 6.6nm-7.4nm, preferred 7nm.The material of radioresistance injury reinforcing layer 3 is TiN or SiO
2, thickness is 1nm-3nm.This multiplayer films in EUV is 69.4%-72.4% at the peak reflectivity of extreme ultraviolet waveband.Can pass through the thickness of change first thermostable layer 22 and the second thermostable layer 24, and the material of radioresistance injury reinforcing layer 6, thickness and combination carry out satisfied different photoetching radiation environment to the requirement of multilayer film.
Multilayer film of the present invention, can also be provided with the 3rd thermostable layer between substrate 1 and cycle layer 2, the material of the 3rd thermostable layer is B
4c, thickness is 0.3nm-0.5nm.
Multilayer film of the present invention, due to the very thin thickness of the first thermostable layer 22 and the second thermostable layer 24, so can ensure that light wave is propagated when forming stationary field (crest and trough are in interface) in multilayer film, the distribution of stationary field is not had an impact, and then can not have a significant impact the reflectivity of multilayer film at 13.5nm place, the loss caused can not more than 5%; The material adopted due to the first thermostable layer 22 and the second thermostable layer 24 is B
4c, stops Si layer 21 and the mutual diffusion of Mo layer 23 so can isolate, ensures the serviceable life of multilayer film.
Multilayer film of the present invention, because the thickness of radioresistance injury reinforcing layer 3 only has 1-3nm, so it is also relatively very little on the impact of the reflectivity of extreme ultraviolet waveband.And due to its material adopted be TiN or SiO
2, can effectively suppress high energy laser irradiation.
The preparation of multilayer film of the present invention can adopt magnetron sputtering technique, wherein, Si layer 21, first thermostable layer 22, Mo layer 23, second thermostable layer 24 select magnetically controlled DC sputtering, and radioresistance injury reinforcing layer 3 selects magnetically controlled DC sputtering, and sputtering working gas all can adopt argon gas.
Comparative example 1
Existing Mo/Si multilayer film, be followed successively by substrate, Mo/Si cycle layer, a Si layer (material Si from bottom to up, thickness is 4.2nm), wherein, Mo/Si cycle layer contains 40 cycles, each cycle is followed successively by the 2nd Si layer (material Si from bottom to up, thickness is 4.2nm), Mo layer (material Mo, thickness is 2.8nm), with substrate contact be the 2nd Si layer, what contact with a Si layer is Mo layer, and the surfaceness of substrate is 0.2nm.
Comparative example 2
There is the multiplayer films in EUV of thermal stability, comprise substrate, cycle layer, a Si layer (material Si from bottom to up successively, thickness is 3.8nm), wherein, cycle layer 2 is containing 40 cycles, each cycle is followed successively by the 2nd Si layer (material Si, thickness is 3.8nm), the first thermostable layer (material B from bottom to up
4c, thickness is 0.4nm), Mo layer (thickness is 2.4nm), the second thermostable layer (material B
4c, thickness is 0.4nm), with substrate contact be the 2nd Si layer 21, what contact with a Si layer is the second thermostable layer, and the surfaceness of substrate is 0.2nm.
Embodiment 1-6
There is the multiplayer films in EUV of thermal stability and radioresistance injury reinforcing, comprise substrate 1, cycle layer 2, radioresistance injury reinforcing layer 3 from bottom to up successively, wherein, cycle layer 2 is containing 40 cycles, each cycle is followed successively by Si layer 21 (material Si, thickness is 3.8nm), the first thermostable layer 22 (material B from bottom to up
4c, thickness is 0.4nm), Mo layer 23 (material Mo, thickness is 2.4nm), the second thermostable layer 24 (material B
4c, thickness is 0.4nm), what contact with substrate 1 is Si layer 21, and what contact with radioresistance injury reinforcing layer 3 is the second thermostable layer 24, and the surfaceness of substrate 1 is 0.2nm.Material and the thickness of the radioresistance injury reinforcing layer 3 of the multiplayer films in EUV of embodiment 1-6 are as shown in table 1.
Table 1 is material and the thickness of radioresistance injury reinforcing layer in the multilayer film of embodiment 1-6
| Embodiment | 1 | 2 | 3 | 4 | 5 | 6 |
| Radioresistance injury reinforcing layer material | SiO 2 | SiO 2 | SiO 2 | TiN | TiN | TiN |
| Radioresistance injury reinforcing layer thickness | 1nm | 2nm | 3nm | 1nm | 2nm | 3nm |
Measure the reflectivity of multilayer film in the wavelength coverage of 12.8nm-14.2nm of comparative example 1-2 and embodiment 1-6, albedometer can be adopted to characterize, result as shown in Figures 2 and 3, in Fig. 2 and Fig. 3, the corresponding comparative example 1 of curve 1, the corresponding embodiment 1 of curve 2, the corresponding embodiment 4 of curve 3, the corresponding comparative example 2 (curve 2,3 and 4 coincidence) of curve 4, the corresponding embodiment 2 of curve 5, the corresponding embodiment 5 (curve 5 and 6 coincidence) of curve 6, the corresponding embodiment 3 of curve 7, the corresponding embodiment 6 of curve 8.As can be seen from Fig. 2 and Fig. 3, existing Mo/Si multilayer film (comparative example 1) peak reflectivity in 12.8nm-14.2nm wavelength coverage is 73%, add the first thermostable layer 22 and the second thermostable layer 24 rear (comparative example 2), due to the absorption of the first thermostable layer 22 and the second thermostable layer 24, reflectivity has small reduction, but impact is little; When adding 1nm respectively, 2nm, 3nmSiO
2radioresistance injury reinforcing layer 3 after, the peak reflectivity of multilayer film in 12.8nm-14.2nm wavelength coverage is respectively 72.4%, 72% and 70%; When adding 1nm respectively, after the radioresistance injury reinforcing layer 3 of 2nm, 3nmTiN, the peak reflectivity of multilayer film in 12.8nm-14.2nm wavelength coverage is respectively 72.4%, 72% and 69.4%; Learnt by Fig. 2 and Fig. 3, the first thermostable layer 22, second thermostable layer 24 that the present invention adds and radioresistance injury reinforcing layer 3 do not play very large impact to the reflectivity of multilayer film, and the loss of reflectivity is within acceptable scope, generally below 5%.
Fig. 4 is the thickness of radioresistance injury reinforcing layer 3 in multilayer film of the present invention and the relation curve of reflectivity.As can be seen from the figure, the reflectivity of multilayer film can increase with the thickness of radioresistance injury reinforcing layer 3 and reduce, when the thickness of radioresistance injury reinforcing layer 3 is less than 2.25nm, radioresistance injury reinforcing layer 3 adopts the reflectivity impact of TiN on multilayer film less, when the thickness of radioresistance injury reinforcing layer 3 is greater than 2.25nm, radioresistance injury reinforcing layer 3 adopts SiO
2less on the reflectivity impact of multilayer film.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among the protection domain of the invention.
Claims (4)
1. there is the multiplayer films in EUV of thermal stability and radioresistance injury reinforcing, it is characterized in that, comprise substrate (1), cycle layer (2), radioresistance injury reinforcing layer (3) from bottom to up successively;
The number of cycles of described cycle layer (2) is 40-60, each cycle is made up of the Si layer (21) be arranged in order from bottom to up, the first thermostable layer (22), Mo layer (23), the second thermostable layer (24), the thickness of described Si layer is 3.7m-3.9nm, the thickness of Mo layer is 2.3nm-2.5nm, and the material of the first thermostable layer and the second thermostable layer is B
4c, thickness is respectively 0.3nm-0.5nm;
The material of described radioresistance injury reinforcing layer (3) is TiN or SiO
2, thickness is 1nm-3nm.
2. the multiplayer films in EUV with thermal stability and radioresistance injury reinforcing according to claim 1, is characterized in that, each periodic thickness of described cycle layer (2) is 7nm.
3. the multiplayer films in EUV with thermal stability and radioresistance injury reinforcing according to claim 1, is characterized in that, the surfaceness of described substrate (1) is less than or equal to 0.2nm.
4. the multiplayer films in EUV with thermal stability and radioresistance injury reinforcing according to claim 1, is characterized in that, is also provided with the 3rd thermostable layer between described substrate (1) and cycle layer (2), and the material of the 3rd thermostable layer is B
4c, thickness is 0.3nm-0.5nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510190378.7A CN104765078A (en) | 2015-04-21 | 2015-04-21 | Multilayer extreme ultraviolet film with heat stability and irradiation damage resistance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510190378.7A CN104765078A (en) | 2015-04-21 | 2015-04-21 | Multilayer extreme ultraviolet film with heat stability and irradiation damage resistance |
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| CN104765078A true CN104765078A (en) | 2015-07-08 |
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| CN201510190378.7A Pending CN104765078A (en) | 2015-04-21 | 2015-04-21 | Multilayer extreme ultraviolet film with heat stability and irradiation damage resistance |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105446088A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Light source collecting mirror with micro-structure and spectrum purification layers |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040121134A1 (en) * | 2000-03-31 | 2004-06-24 | Frederik Bijkerk | Multilayer system with protecting layer system and production method |
| JP2006173490A (en) * | 2004-12-17 | 2006-06-29 | Nikon Corp | Optical element and projection aligner using the same |
| WO2006068464A1 (en) * | 2004-12-21 | 2006-06-29 | Stichting Voor Fundamenteel Onderzoek Der Materie | Multi-layer mirror for radiation in the soft x-ray and xuv wavelength range |
| US20080088916A1 (en) * | 2004-12-23 | 2008-04-17 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Thermally Stable Multilayer Mirror for the Euv Spectral Region |
| CN104297820A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Multilayer film improving extreme ultraviolet spectral purity and oxidation resistance |
-
2015
- 2015-04-21 CN CN201510190378.7A patent/CN104765078A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040121134A1 (en) * | 2000-03-31 | 2004-06-24 | Frederik Bijkerk | Multilayer system with protecting layer system and production method |
| JP2006173490A (en) * | 2004-12-17 | 2006-06-29 | Nikon Corp | Optical element and projection aligner using the same |
| WO2006068464A1 (en) * | 2004-12-21 | 2006-06-29 | Stichting Voor Fundamenteel Onderzoek Der Materie | Multi-layer mirror for radiation in the soft x-ray and xuv wavelength range |
| US20080088916A1 (en) * | 2004-12-23 | 2008-04-17 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Thermally Stable Multilayer Mirror for the Euv Spectral Region |
| CN104297820A (en) * | 2014-09-26 | 2015-01-21 | 中国科学院长春光学精密机械与物理研究所 | Multilayer film improving extreme ultraviolet spectral purity and oxidation resistance |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105446088A (en) * | 2015-12-21 | 2016-03-30 | 中国科学院长春光学精密机械与物理研究所 | Light source collecting mirror with micro-structure and spectrum purification layers |
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Application publication date: 20150708 |