CN104756238B - The method of controlling switch pattern ion energy distribution system - Google Patents

The method of controlling switch pattern ion energy distribution system Download PDF

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Publication number
CN104756238B
CN104756238B CN201380056068.5A CN201380056068A CN104756238B CN 104756238 B CN104756238 B CN 104756238B CN 201380056068 A CN201380056068 A CN 201380056068A CN 104756238 B CN104756238 B CN 104756238B
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function
voltage
ion energy
plasma
gas current
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CN104756238A (en
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V·布劳克
D·J·霍夫曼
D·卡特
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Advanced Engineering Solutions Global Holdings Private Limited
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Advanced Energy Industries Inc
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Priority claimed from US13/596,976 external-priority patent/US9767988B2/en
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Priority to CN201711336133.6A priority Critical patent/CN107978506B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/248—Components associated with the control of the tube
    • H01J2237/2485—Electric or electronic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

Disclose for adjusting the ion energy in plasma room and substrate being clamped to system, the method and apparatus of substrate support.Exemplary method includes：Substrate is placed in plasma room；Plasma is formed in the plasma room；Electric energy is controllably switched to the substrate, to apply periodic voltage function to the substrate；And during multiple cycles of the periodic voltage function, the periodic voltage function is modulated in response to the ion energy distribution of the definition on the surface of the substrate, to realize the ion energy distribution of the definition on the basis of time averaging.

Description

The method of controlling switch pattern ion energy distribution system
Related Cases and priority
This application is the U.S. Patent Application No. No.13/193,299 submitted on July 28th, 2011 part continuation application The non-provisional U.S. Patent Application No. No.12/870,837 submitted for 29th with August in 2010 part continuation application.Application number No.13/193,299 and No.12/870,837 details is used for all suitable in being incorporated herein in a manner of it is cited in full text Purpose.
Technical field
Present disclosure relates generally to corona treatment.Specifically, etched the present invention relates to plasmaassisted, The method and apparatus of deposition, and/or other plasma assisted process, but not limited to this.
Background technology
The semiconductor devices of many types is manufactured using the etching technique based on plasma.If conductor is eclipsed Carve, then can will be applied to conductive substrates relative to the negative voltage on ground, to be created substantially at the surface both ends of liner conductor Consistent negative voltage, the ion of positively charged is attracted conductor 801 by it, and result, the cation for colliding conductor substantially have phase Same energy.
However, if substrate is dielectric, indeclinable voltage does not work to the voltage at the surface both ends in substrate. But AC voltages (for example, high frequency) can be applied to conductive plate (chuck), to cause AC regions to go out electricity in the surface induction of substrate Pressure.During the positive half period in AC cycles, substrate suction phase is light electronics for the quality of cation；So as in positive half period Interior many electrons are attracted to the surface of substrate.As a result, the surface of substrate will be negatively charged, and this causes ion to be attracted to band The surface of negative electricity.And when the surface of ionic bombardment substrate, hit and evict material from the surface of substrate from, complete etching.
In many cases it is desirable to there is narrow ion energy distribution, but by sine wave be applied to substrate can induce it is wide Ion energy distribution, which has limited the ability that corona treatment performs desired etching outline.It is known to realize narrow ion energy Amount distribution technique is costly, efficiency is low, unmanageable and may negatively affect plasma density.As a result, known to these Useless be commercially used of technology used.Accordingly, it is desirable to a kind of system and method come solve current technology deficiency and carry For other novel and creative features.
The content of the invention
The one exemplary embodiment of present disclosure shown in accompanying drawing summarized below.In specific embodiment part These and other embodiment will be described more fully.Summary is limited the invention to it will be appreciated, however, that being not present Or the intention of the form described in specific embodiment part.It will be appreciated by the appropriately skilled person that having many can fall into Such as changing in the spirit and scope of the present invention expressed in claim, equivalent and alternative structure.
According to one embodiment, the present invention can be characterized as a kind of for establishing one or more plasma sheath voltages Method.Methods described can include providing modified periodic voltage function to the substrate support of plasma chamber.It is described Substrate support may be coupled to be configured in the substrate handled in plasma.Equally, it is described modified Periodic voltage function can be included by the periodic voltage function of gas current compensation Ic modifications.The modified periodic voltage letter Number can include the part between pulse and the pulse.Equally, the pulse can be the function of the periodic voltage function, And the slope of the part between the pulse can be the function of the gas current compensation Ic.Methods described can also include Access at least represents the effective capacitance value C of the electric capacity of the substrate support1.Methods described, which may finally identify, to produce arrival The gas current compensation Ic of the defined ion energy distribution function of the ion on the surface of substrate value, wherein, The identification is the effective capacitance C1The slope dV of the part between the pulse0/ dt function.
According to another embodiment, the present invention can be described as it is a kind of be used for plasma be biased thus wait from The method that the ion energy of definition is realized at the surface of substrate in plasma processing chamber.Methods described may include to substrate support Apply the modified periodic voltage function for the periodic voltage function for including being compensated modification by gas current.Methods described can also wrap At least one circulation to the modified periodic voltage function is included to be sampled to produce voltage data point.Methods described is also It may include to estimate the numerical value of the first ion energy at the substrate surface according to the voltage data point.Equally, the side Method can include adjusting the modified periodic voltage function, until first ion energy is equal to the ion of the definition Energy.
According to another embodiment, the present invention can be characterized as a kind of realizing the side of ion energy distribution function width Method.Methods described may include to provide modified periodic voltage function to the substrate support of plasma processing chamber.The side Method may additionally include for the first moment and sample at least two voltages from the nonsinusoidal waveform at the second moment.Methods described can be with Comprise additionally in and the slope of at least two voltage is calculated as dV/dt.Equally, methods described may include by the slope with The reference slope known is compared, so as to corresponding with ion energy distribution function width.Finally, methods described may include to adjust The modified periodic voltage function, to cause the slope to refer to slope close to described.
The another aspect of present disclosure may be characterized as a kind of device, including power supply, gas current compensating unit and control Device.The power supply can provide periodic voltage function, and the periodic voltage function has the part between pulse and the pulse.Institute The slope of the part between the pulse can be changed by stating gas current compensating unit, to form modified periodic voltage Function.The modified periodic voltage function, which can be configurable for providing, arrives substrate support, in plasma Handled in body process chamber.The controller may be coupled to the switched-mode power supply and the gas current compensation section Part.The controller can be additionally configured to identify the numerical value of the gas current compensation, if carried to the substrate support Compensated for the gas current, the ion energy distribution function of the definition of the ion on the surface for reaching the substrate will be produced.
The another aspect of present disclosure can be characterized as a kind of tangible computer readable storage medium of non-transitory, its Coding has processor readable instruction, to perform the side of the gas current for monitoring the plasma for being configured as handling substrate Method.Methods described can include：In the case of the gas current compensation with the first numerical value, to modified periodic voltage Function is sampled, and is considered in the case of having the gas current compensation of second value, to the modified week Phase function of voltage is sampled.When methods described may also include based on the described first sampling and the described second sampling to be determined as Between function the modified periodic voltage function slope.Methods described is also based on the described first sampling and described second Sample the slope of the modified periodic voltage function of the function to be determined as the time.Methods described finally may include base The third value of the gas current compensation is calculated in the slope, it is constant on the substrate at the third value Voltage will exist at least one cycle memory of the modified periodic voltage function.
These embodiments and other embodiments are described in further detail herein.
Brief description of the drawings
By referring to detailed description below and appended claims in combination with accompanying drawing, each purpose of the invention and Advantage and more complete understanding can be apparent and it is more readily appreciated that wherein, throughout several accompanying drawings, identical accompanying drawing mark Note refers to same or similar element, and in the accompanying drawings：
Fig. 1 shows the block diagram of the plasma process system according to an embodiment of the invention；
Fig. 2 is the block diagram for the one exemplary embodiment for showing the switched-mode power supply system shown in Fig. 1；
Fig. 3 is to can be used for realizing that the schematic diagram of the part of the switching mode bias supply described with reference to figure 2 represents；
Fig. 4 is the timing diagram for showing two drive signal waveforms；
Fig. 5 is the list for the Operation switch mode bias power supply for realizing the ion energy distribution concentrated at specific ion energy The figure of pattern represents；
Fig. 6 is to be shown in which to generate showing for the bimodal pattern of the operation at two discrete peaks in ion energy distribution Figure；
Fig. 7 A and Fig. 7 B are to show the reality carried out in plasma, the diagram of direct ion energy measurement；
Fig. 8 is the block diagram for showing an alternative embodiment of the invention；
Fig. 9 A are the diagrams for showing the exemplary periodic voltage function by sinusoidal modulation function modulation；
Fig. 9 B are the exploded views of a part for the periodic voltage function shown in Fig. 9 A；
Fig. 9 C show it is being obtained by the Sine Modulated of periodic voltage function, based on time averaging obtained ion energy Distribution；
Fig. 9 D show the time averaging IEDF that is obtained when periodic voltage function is modulated by sinusoidal modulation function etc. The actual direct ion energy measurement carried out in gas ions；
Figure 10 A show the periodic voltage function by saw tooth modulation FUNCTION MODULATION；
Figure 10 B are the exploded views of a part for the periodic voltage function shown in Figure 10 A；
Figure 10 C be show it is being obtained by the Sine Modulated of the periodic voltage function in Figure 10 A and 10B, put down based on the time The diagram of the distribution of equal resulting ion energy；
Figure 11 is the diagram for showing IEDF functions in the right column and associated modulation function being shown in left column；
Figure 12 is the embodiment for the gas current being shown in which in gas current compensating unit compensation plasma body room Block diagram；
Figure 13 is the diagram for showing exemplary ion current compensation part；
Figure 14 is the diagram for showing the exemplary voltage at node Vo shown in fig. 13；
Figure 15 A-15C are in response to the voltage waveform occurred in compensation electric current at the surface of substrate or wafer；
Figure 16 is the one exemplary embodiment that may be embodied as realizing the current source of the current source with reference to described by figure 13；
Figure 17 A and 17B are the block diagrams for showing other embodiments of the invention；
Figure 18 is the block diagram for showing an alternative embodiment of the invention；
Figure 19 is the block diagram for showing another embodiment of the present invention；
Figure 20 is can be with reference to the input parameter and the block diagram of control output used with reference to the embodiment described by figure 1-19；
Figure 21 is the block diagram for showing another embodiment of the present invention；
Figure 22 is the block diagram for showing another embodiment of the present invention；
Figure 23 is the block diagram for showing another embodiment of the present invention；
Figure 24 is the block diagram for showing another embodiment of the present invention；
Figure 25 is the block diagram for showing another embodiment of the present invention；
Figure 26 is the block diagram for showing another embodiment of the present invention；
Figure 27 is the block diagram for showing another embodiment of the present invention；
The method that Figure 28 shows the embodiment according to present disclosure；
Figure 29 shows another method of the embodiment according to present disclosure；
Figure 30 shows one embodiment of the method for the ion energy distribution of the ion on the surface of control collision substrate；
Figure 31 shows the method for setting IEDF and ion energy；
Figure 32 shows that two transmitted according to one embodiment of present disclosure to substrate support are modified Periodic voltage function waveform；
Figure 33 shows the gas current of the plasma source unstability or change that can indicate in plasma density Waveform；
Figure 34 shows the gas current I of the modified periodic voltage function waveform with aperiodic shapeI；
Figure 35 shows the modified periodic voltage function waveform for the failure that can be indicated in bias supply；
Figure 36 shows the modified periodic voltage function waveform for the dynamic change that can indicate system capacitance；
Figure 37 shows the modified periodic voltage function waveform for the change that can indicate plasma density；
Figure 38 shows the sampling of the gas current for different process operation, wherein, drift in gas current can be with Indicate system drifting；
Figure 39 shows the sampling of the gas current for different technical parameters.
Two offset waveforms that Figure 40 is monitored in the case of showing in room without plasma；
Figure 41 shows two offset waveforms that can be used for verifying plasma process；
Figure 42 shows some supply voltage and ion energy figures of the relation between display supply voltage and ion energy；
Figure 43 shows one embodiment of the method for the ion energy distribution of the ion on the surface of control collision substrate；
Figure 44 shows each waveform at the difference in system herein disclosed；
Figure 45 shows that carrying out final increase in gas current compensates Ic is varied so that it matches gas current II's Effect；
Figure 46 shows the selection of ion energy；
Figure 47 shows the selection and extension of ion energy distribution function width；
Figure 48 shows the supply voltage V that can be used for realizing more than one ion energy levelPSA pattern, its In, each ion energy level has narrow IEDF width；
Figure 49 shows the supply voltage V that can be used for realizing more than one ion energy levelPSAnother pattern, its In, each ion energy level has narrow IEDF width；And
Figure 50 shows the supply voltage V that can be used for creating defined IEDFPSI is compensated with gas currentCOne Combination.
Embodiment
The one exemplary embodiment of plasma process system is generally shows in Fig. 1.As shown, plasma electrical source 102 are coupled to plasma processing chamber 104, and switched-mode power supply 106 is coupled to support 108, the substrate in room 104 110 are placed on support 108.It also show the controller 112 for being coupled to switched-mode power supply 106.
In this exemplary embodiment, plasma processing chamber 104 can realize (example with the room of substantially conventional structure Such as, including by one or more pump (not shown) the vacuum casting emptied).In addition, it will be understood to those of skill in the art that room Plasma in 104 can by any source forcing, such as including spiral plasma source, it include encouraging and The magnetic coil and antenna of plasma 114 in maintenance reaction device, and gas access can be provided to introduce a gas into room 104 In.
As shown, Exemplary plasma room 104 is set and is configured to utilize and the energetic ion of substrate 110 is banged Hit auxiliary to carry out plasma with other corona treatments (for example, plasma-deposited and plasmaassisted is ion implanted) The material etches helped.Plasma electrical source 102 in this embodiment be configured as under one or more frequencies (for example, Energy (for example, RF energy) 13.56MHz) is applied to room 104 via matching network (not shown), to encourage and to maintain Gas ions 114.It should be appreciated that the invention is not restricted to any particular type to the plasma by energy coupling to room 104 Power supply 102 or source, and various frequencies and energy level can inductively or capacitively be coupled to plasma 114.
As shown, by dielectric substrate 110 (for example, semiconductor crystal wafer) to be processed at least partly by support 108 supportings, support 108 can include a part (for example, being handled for semiconductor crystal wafer) for conventional wafer chuck.Support 108 can be formed as having insulating barrier between support 108 and substrate 110, and wherein substrate 110 is capacitively coupled to flat Platform, but support 108 can also be floating with the voltage different from support 108.
As described above, if substrate 110 and support 108 are conductor, fixed voltage can be applied to support 108, and due to the electrical conduction by substrate 110, the voltage for being applied to support 108 may be applied to the surface of substrate 110.
However, in the case of substrate 110 is dielectric, apply processing of the fixed voltage to substrate 110 to support 108 Surface both ends produce voltage and not worked.Therefore, exemplary switch mode power 106 is configured as controlled so as in substrate Being realized on 110 surface can attract the ion in plasma 114 to carry out the voltage collided with substrate 110, so as to perform substrate 110 Controlled etch and/or deposition and/or other plasma assisted process.
In addition, as discussed further herein, the switched-mode power supply 106 of embodiment be configured as operating such that by wait from Daughter power supply 102 (to plasma 114) apply energy with by switched-mode power supply 106 be applied to substrate 110 energy it Between be substantially absent from interaction.For example, the energy applied by controlling switch mode power 106 is controllable, to control Ion energy processed and have no substantial effect on the density of plasma 114.
In addition, the embodiment of many exemplary switch mode powers 106 illustrated in fig. 1 is by can be by relatively simple control The relatively inexpensive part of algorithm control is realized.And compared with prior art, the embodiment of many switched-mode power supplies 106 has Effect is much；So as to reduce the cost of energy relevant with removing excessive heat energy and expensive material.
It is to utilize high-power linear amplifier and complicated control to apply alive technology known to one to dielectric substrate Scheme processed is combined, to apply energy to the substrate support that voltage is induced in substrate surface.However, this technology does not have also Used by commercial entity, reason is not prove that the technology is cost-effective and is easily managed also.Specifically, it is used linear Amplifier is generally larger, very expensive, poorly efficient and unmanageable.In addition, linear amplifier inherently need AC coupling (for example, Blocking capacitor), and the miscellaneous function of similar chuck, by fed in parallel circuit realiration, it can damage the source with chuck The AC frequency spectrum degrees of purity of system.
It is contemplated that another technology be to substrate apply high frequency power (for example, utilizing one or more Linear Amplifers Device).However, because the high frequency power article on plasma volume density applied to substrate has an impact, therefore have been found that this technology equity Plasma density has detrimental effect.
In certain embodiments, the switched-mode power supply 106 shown in Fig. 1 can be by being depressured, boosting or lift Die mould energy technologies are realized.In these embodiments, the pulse power of change can be applied with controlling switch mode power 106 Level, to induce potential on the surface of substrate 110.
In other embodiments, switched-mode power supply 106 can be by other more complicated switched-mode power supplies and control skill Art is realized.With reference next to Fig. 2, for example, with reference to figure 1 describe switched-mode power supply by switching mode bias supply 206 Realize, switching mode bias supply 206 is used to apply energy to substrate 110, to realize one or more desired bombardment The energetic ion of substrate 110.It also show ion energy control unit 220, arc-detection part 222 and be coupled to switching molding The controller 212 of both formula bias supply 206 and wave memorizer 224.
The setting of these shown parts is rational；So as to combine in actual embodiment or further separate These parts, and these parts can be connected in a variety of ways, the groundwork without changing system.For example, in some realities Apply in example, can be using by the controller 212 that hardware, software, firmware or its combination are realized power supply 202 and switching molding can be controlled Both formula bias supplies 206.However, in alternative embodiments, power supply 202 and switching mode bias supply 206 are by completely solely Vertical functional unit is realized.It is further illustrated, controller 212, wave memorizer 224, the and of ion energy control unit 220 Switching mode bias supply 206 can be integrated into single part (for example, in common shell) or can be distributed in point In vertical part.
Switching mode bias supply 206 in this embodiment is typically configured as in a controlled manner applying support 208 Making alive, to realize the Energy distribution for desired (definition) ion for bombarding substrate surface.More specifically, switching mode is inclined Put power supply 206 be configured as it is desired to realize by the way that the specific waveforms of one or more particular energy level are applied into substrate (definition) ion energy distribution.And more specifically, in response to the input from ion energy control unit 220, switching mode Bias supply 206 applies particular energy level to realize specific ion energy, and using by the waveform in wave memorizer 224 One or more voltage waveforms of data definition apply specific energy level.Therefore, can be selected using ionic control portion One or more specific ion bombarding energies are selected, to perform the controllable etching to substrate (or at the plasma of other forms Reason).
As shown, switched-mode power supply 206 includes switch block 226 ', 226 " (for example, high-power field effect transistor Pipe), it is used for the branch that energy is switched to substrate 210 in response to the drive signal from corresponding driving part 228 ', 228 " Bearing portion 208.And defined in the content based on wave memorizer 224 timing and by controller 212 to by driving part 228 ', Drive signal 230 ', 230 " is controlled caused by 228 ".For example, the controller 212 in many embodiments is suitable to explain waveform The content of memory and driving control signal 232 ', 232 " is produced, driving control signal 232 ', 232 " is by driving part 228 ', 228 " using controlling to the drive signal 230 ', 230 " of switch block 226 ', 226 ".Although with exemplary purpose Two switch blocks 226 ', 226 " that can be set with half-bridge configuration are shown, but it is inevitable it is conceivable that in various frameworks Less or other switch block (for example, configuration of H bridge) can be realized.
In various operational modes, controller 212 (for example, utilizing Wave data) modulation driving control signal 232 ', 232 " timing, so that the support 208 in substrate 210 realizes desired waveform.In addition, switched-mode power supply 206 be based on from Sub- energy control signal 234 provides substrate 210 power supply, and control signal 234 can be DC signals either time-varying waveform.Cause This, the present embodiment can be by controlling to the timing signal of switch block and controlling what is applied by switch block 226 ', 226 " Energy (being controlled by ion energy control unit 220) controls ion energy distribution.
In addition, the controller 212 in this embodiment is configured as：In response to by the grade that arc-detection part 222 detects from Electric arc in seed cell 204 performs arc-management function.In certain embodiments, when an arc is detected, controller 212 changes Driving control signal 232 ', 232 ", plasma is extinguished with the waveform for the output end 236 for be applied to switched-mode power supply 206 Electric arc in body 214.In other embodiments, controller 212 is by simply interrupting the application of driving control signal 232 ', 232 " To extinguish electric arc, to cause the application of the energy of the output end 236 of switching mode bias supply 206 to be interrupted.
With reference next to Fig. 3, it can be used for the part for realizing the switching mode bias supply 206 described with reference to figure 2 Schematic diagram represent.As shown, the switch block T1 and T2 in this embodiment is opened up with half-bridge (also referred to as totem) type Flutter to set.Jointly, R2, R3, C1 and C2 represent plasma load, and C10 is that effective capacitance (is also referred to as gone here and there herein Join electric capacity or chuck electric capacity), and C3 is optional physical capacitor, with prevent the voltage that is induced on substrate surface or The DC electric current of voltage from electrostatic chuck (not shown) flows through circuit.C10 is referred to as effective capacitance, because it includes substrate branch The application of the series capacitance of support part and electrostatic chuck (or e- chucks) (or also referred to as chuck electric capacity) and biasing institute is intrinsic Other electric capacity, such as insulation and substrate.As shown, L1 is stray inductance (for example, feeding the conductor of electric energy to load Natural inductance).And three inputs in this embodiment, be present：Vbus, V2 and V4.
V2 and V4 represents drive signal (for example, believing with reference to the driving exported by driving part 228 ', 228 " that figure 2 describes Numbers 230 ', 230 "), and in this embodiment, it can be V2 and V4 timings (pulse length and/or mutually delay) so that can The waveform for the voltage output Vout for being applied to substrate support is controlled to modulate T1 and T2 closing.In many embodiments In, the transistor for realizing switch block T1 and T2 is not perfect switch, therefore in order to reach desired waveform, is considered brilliant Body pipe special characteristic.Under many operator schemes, simply changing V2 and V4 timing can realize what will be applied in Vout Desired waveform.
For example, can be with Operation switch T1, T2 make it that the voltage on substrate 110,210 surfaces is usually negative and periodic voltage Pulse is close and/or is referred to only slight beyond positive voltage.Magnitude of voltage at substrate 110,210 surfaces is the value for defining ion energy, Its feature can be in terms of ion energy distribution function (IEDF).In order to realize desired voltage at substrate 110,210 surfaces, It is generally rectangular in Vout pulse and be long enough to go out of short duration positive electricity in substrate 110,210 surface inductions with width Pressure, so as to which the electronics of abundance is attracted into substrate 110,210 surfaces, so as to realize desired voltage and corresponding ion energy.
Close and/or just over positive voltage reference periodic voltage pulse can have by switching T1, T2 switching capability The minimum time of limitation.The substantially negative part of the voltage may extend away, as long as the voltage is not building up to the electricity of damage switch It is flat.Meanwhile the length of the negative part of voltage should exceed the ion transit time.
Vbus in this embodiment define Vout measurement impulse amplitude, which define substrate surface voltage and Ion energy.Referring briefly back to Fig. 2, Vbus may be coupled to ion energy control unit, and the ion energy control unit can With by being realized for applying the D/C power of DC signals or time-varying waveform to Vbus.
The mutual delay of pulsewidth, pulse shape and/or two signals V2, V4 can be modulated to reach the expectation ripple in Vout Shape (in the periodic voltage function also referred to as changed herein), and the voltage for being applied to Vbus can influence the characteristic of pulse. In other words, voltage Vbus can influence the relative phase of pulsewidth, pulse shape and/or signal V2, V4.For example, referring briefly to Fig. 4, show and two drive signal waveform (as the V2 and V4) timing diagrams that can be applied to T1 and T2 are shown, so as in Vout Produce periodic voltage function as illustrated in FIG. 4.In order to be modulated at Vout pulse shape (for example, in order to realize Vout arteries and veins The minimum time of punching, also reach the peak value of pulse), two gate drive signals V2, V4 timing can be controlled.
For example, two gate drive signals V2, V4 can be applied to switch block T1, T2, thus between pulse Time T-phase ratio, can be shorter in the time for each pulse that Vout applies, but is long enough in substrate 110,210 surface senses Positive voltage should be gone out, so as to which electronics is attracted into substrate 110,210 surfaces.Further, it is found that by changing the grid between pulse Pole tension level, the slope for the voltage for being applied to Vout between the pulses can be controlled (for example, being served as a contrast between the pulses to realize The substantially invariable voltage of basal surface).In certain operations pattern, the repetitive rate of grid impulse is about 400kHz, but this is heavy Multiple rate can necessarily change according to the difference of application.
Although not requiring, in practice, according to modeling and refinement based on actual embodiment, can define can For producing the waveform of desired (definition) ion energy distribution, and the waveform can be stored (for example, with reference to figure 1 In the Waveform storage portion of description, the sequence as voltage level).In addition, in many embodiments, it can directly produce waveform (for example, need not the feedback from Vout)；Therefore, the undesirable aspect of feedback control system is avoided (for example, during setting Between).
Referring again to Fig. 3, Vbus can be modulated to control ion energy, and the waveform stored can be used for control gate Pole drive signal V2, V4, to realize the expectation impulse amplitude at Vout, while minimize pulsewidth.Again, this can root According to can model or implement and the special characteristic of transistor empirically established is completed.For example, with reference to figure 5, Vbus is shown Change over time, substrate 110, the voltage on 210 surfaces change over time and the diagram of corresponding ion energy distribution.
Diagram in Fig. 5 shows the monotype of Operation switch mode bias power supply 106,206, its realize it is specific from The ion energy distribution that son can be concentrated.As shown, in order to realize the concentration of single ion energy in this example, keep applying It is added to that Vbus voltage is constant, while control is applied to V2 and V4 voltage (for example, utilizing the drive signal shown in Fig. 3), with Just pulse is produced in the output end of switching mode bias supply 106,206, it realizes the corresponding ion energy shown in Fig. 5 Distribution.
As illustrated in FIG. 5, substrate 110, the potential on 210 surfaces are usually to bear, to attract to bombard and etch substrate 110th, 210 ion.The cycle short pulse for being applied to substrate 110,210 (by applying pulse to Vout) has by being applied to Vbus potential is come the size that defines, and these pulses result in the minor variations of the potential of substrate 110,210 (for example, connecing Be bordering on just or slightly positive potential), electronics is attracted to substrate surface by this, to realize along substrate 110,210 surfaces substantially On negative potential.As illustrated in FIG. 5, the single ion that being applied to Vbus constant voltage realizes in specific ion energy leads to The concentration of amount；Therefore, can be by the way that Vbus simply be set as into certain electrical potential to select specific ion bombarding energy.Other Under operator scheme, the concentration of the ion energy of two or more separation can be created (for example, with reference to Figure 49).
It would be recognized by those skilled in the art that without power supply is limited into switched-mode power supply, and it is in this way, also controllable The output of power supply is to influence certain ion energy.In this way, when in situation about not combined with gas current compensation or gas current During lower consideration, the output of power supply (either switched-mode power supply or other power supplys) is also referred to as supply voltage VPS。
With reference to figure 6, for example, showing the bimodal operator scheme for having two detached peakses in ion energy distribution Diagram.As shown, in this operating mode, substrate is subjected to two obvious voltages and the level of recurrent pulse, and because This creates the concentration of the ion energy of two separation.As shown, in order to realize that two obvious ion energies are concentrated, The voltage that Vbus applies alternation, and each level defines the energy electricity that two ion energies are concentrated between two levels It is flat.
Although Fig. 6 shows two voltages (for example, Figure 48) of the substrate 110,210 of the alternation after each pulse, It is not required that this is inevitable.For example, under other operator schemes, relative to the voltage for being applied to Vout, to be applied to V2 and V4 voltage switches over (for example, using drive signal shown in Fig. 3), to cause the induced voltage in substrate surface to exist After two or more pulse from first voltage to second voltage (vice versa) alternation (for example, Figure 49).
In the prior art, have attempted to the combination of (as caused by waveform generator) two waveforms being applied to and linearly put The combination of two waveforms after amplification is simultaneously applied to substrate to realize multiple ion energies by big device.However, the method is than ginseng The method for examining Fig. 6 descriptions is much more complex, and needs the linear amplifier and waveform generator of costliness.
With reference next to Fig. 7 A and 7B, single energy of Vbus D/C voltage and double level modulations pair are respectively illustrated and are applied to The diagram for the actual direct ion energy measurement carried out in the plasma answered.As illustrated in figure 7 a, in response to being applied to Vbus fixed voltage (for example, as illustrated in FIG. 5), ion energy distribution concentrated near 80eV.And in figure 7b, ring Should in Vbus double level adjustments (for example, as illustrated in FIG. 6), the ion energies of two separation concentrate be present in 85eV and Near 115eV.
With reference next to Fig. 8, the block diagram for showing another embodiment of the invention is shown.As shown, switching mode Power supply 806 is coupled to controller 812, ion energy control unit 820 and substrate support via arc-detection part 822 808.Controller 812, switched-mode power supply 806 and ion energy control unit 820 jointly work to substrate support 808 Apply energy, to realize desired (definition) ion energy distribution on the surface of substrate 810 on the basis of time averaging.
Briefly with reference to figure 9A, such as the periodic voltage function that the cycle is about 400kHz is shown, it is in cycle electricity It is modulated during the multiple cycles for pressing function by about 5kHz sinusoidal modulation function.Fig. 9 B are the periodic voltages circulated in Fig. 9 A The exploded view of the part of function, and Fig. 9 C show it is being obtained by the Sine Modulated of periodic voltage function, time averaging On the basis of, the distribution of resulting ion energy.And Fig. 9 D are shown when periodic voltage function is entered by sinusoidal modulation function The actual directly ion energy measurement carried out during row modulation in resulting, time averaging IEDF plasma.Such as this Text is discussed further, realizes that desired (definition) ion energy distribution can be by simply on the basis of time averaging Change and be applied to the modulation function of periodic voltage to realize.
With reference to Figure 10 A and 10B as another example, modulate 400kHz's by about 5kHz saw tooth modulation function Periodic voltage function, to reach the ion energy distribution shown in Figure 10 C on the basis of time averaging.As shown, In addition to the periodic voltage function in Figure 10 is modulated by sawtooth function rather than SIN function, the cycle used with reference to Figure 10 is electric Press function identical with Fig. 9.
It should be appreciated that the ion energy distribution function shown by Fig. 9 C and Figure 10 C does not indicate that the instantaneous of the surface of substrate 810 Ion energy distribution, but the time averaging ion energy of phase antirepresentation.With reference to figure 9C, for example, in a certain particular moment, ion Energy distribution would is that present on whole cycle process in modulation function, the subset of shown ion energy distribution.
It should also be appreciated that modulation function needs not be fixed function, fixed frequency is also not necessarily.In some cases, example Such as, may it is expected to be modulated to realize the periodic voltage function with one or more specific modulation period of a function Specifically, time averaging ion energy distribution, and then to the cycle with one or more another modulation function Periodic voltage function is modulated to realize another time averaging ion energy distribution.Under many circumstances, to (modulation period Function of voltage) this change of modulation function can be favourable.For example, etched if necessary to specific ion Energy distribution Specific geometric configuration is etched through certain material, it is possible to using the first modulation function, and then, can then use another One modulation function realizes different etch geometries or is etched through another material.
Similarly, periodic voltage function is (for example, in the part and Fig. 4 of 400kHz in Fig. 9 A, 9B, 10A and 10B Vout) need not strictly fix (for example, the shape and frequency of periodic voltage function can change), but generally its frequency is by interior Transition time of ion determine, to cause the ion of interior by the voltage influence for being applied to substrate 810.
Driving control signal 832 ' and 832 " is provided to switched-mode power supply 806, is made with reference to figure 8, controller 812 back Obtain switched-mode power supply 806 and produce periodic voltage function.Part that switched-mode power supply 806 can go out as shown in Figure 3 is realized (for example, creating periodic voltage function illustrated in fig. 4), but it is inevitable it is conceivable that other switch configurations can be utilized.
In general, ion energy control unit 820 plays, to periodic voltage function application modulation function, (it is by controller 812 produce with reference to switched-mode power supplies 806) effect.As shown in figure 8, ion energy control unit 820 include with it is self-defined Modulation controller 840, IEDF function memories 848, user interface 846 and the power supply unit 844 that IEDF portions 850 communicate.Should Recognize, show that these parts are intended to expressive function part, actually described functional part can be by identical or different part To realize.
Modulation controller 840 in this embodiment, which is typically based on, to be defined the data of modulation function and controls power supply unit 844 (and its output 834), and power supply unit 844 (based on control signal 842 from modulation controller 840) produces modulation function 834, modulation function 834 is applied to the periodic voltage function as caused by switched-mode power supply 806.User in this embodiment connects Mouthfuls 846, which are configured with family, can select to be stored in predefined IEDF functions in IEDF function memories 848, Huo Zhejie Customized IEDF parts 850 are closed to define customized IEDF.
In many embodiments, power supply unit 844 includes D/C power (for example, DC switched-mode power supplies or linearly putting Big device), modulation voltage (for example, D/C voltage of change) is applied to switched-mode power supply (for example, opening shown in Fig. 3 by it Close the Vbus of mode power).In these embodiments, modulation controller 840 controls the voltage electricity exported by power supply unit 844 It is flat so that power supply unit 844 applies the voltage being consistent with modulation function.
In some embodiments, IEDF function memories 848 include and each phase in multiple IEDF distribution functions Corresponding multiple data sets, and user interface 846 allows users to select desired (definition) IEDF functions.Reference chart 11, for example, right row are shown available for the exemplary IEDF functions for user's selection.And left column shows the modulation letter of correlation The modulation function is applied to periodic voltage function come corresponding to realizing by number, modulation controller 840 with reference to power supply unit 844 IEDF functions.It should be appreciated that the IEDF functions shown in Figure 11 are only exemplary, it can also be used to select other IEDF letters Number.
Customized IEDF parts 850 typically serve to allow users to define desired (definition by user interface 846 ) effect of ion energy distribution function.In some embodiments, for example, customized IEDF parts 850 allow users to It is determined that define the value of the special parameter of ion energy distribution.
For example, customized IEDF parts 850 allow to according in high level (high IF), middle level (middle IF) and low electricity Relative flux level (for example, percentage according to the flux) combination of flat (low IF) defines the IEDF's between these energy levels One or more functions define IEDF functions.In many cases, the IEDF functions between only high IF, low IF and these level Just it is enough to define IEDF functions.As particular example, user can be utilized in 20% contribution level (contribution Level) (contribution to total IEDF) and 30% contribution level between sinusoidal IEDF come ask the 1200eV of 20% contribution level, The 700eV of 30% contribution level.
It is further envisioned that customized IEDF portions 850 can be allowed the user to one or more (for example, more) energy electricity Flat list and corresponding each energy level and IEDF percentage contribution fill form.And implement in another substitute In example, it is envisioned that customized IEDF parts 850 combine user interface 846 and allow users to draw by presenting to user Desired (definition) IEDF graphical tool allows users to graphically produce desired (definition) IEDF.
In addition it is further envisioned that IEDF function memories 848 and self-defined IEDF parts 850 can be with interactive operations to use Family can select predefined IEDF functions and then change predefined IEDF functions, to produce by predefined IEDF letters Customized IEDF functions derived from number.
Once defining IEDF functions, modulation controller 840 will just define the data of desired (definition) IEDF functions The control signal 842 of control power supply unit 844 is converted to, to cause power supply unit 844 to realize and desired (definition) IEDF Corresponding modulation function.For example, control signal 842 controls power supply unit 844 that power supply unit 844 is exported by modulation letter The voltage of number definition.
With reference next to Figure 12, it is to show the ion in the compensation plasma body room 1204 of gas current compensating unit 1260 The block diagram of the embodiment of electric current.It has been discovered by the applicants that under more high level, the gas current of indoor more high level influences substrate The voltage on surface, and result, ion energy distribution are also affected.Briefly with reference to figure 15A-15C, work as example, showing Voltage waveform when voltage waveform appears in substrate 1210 or crystal column surface and its relation with IEDF.
More specifically, Figure 15 A are shown as gas current IIThe cycle electricity on the surface of substrate 1210 during equal to compensation electric current Ic Press function；Figure 15 B are shown as gas current IIThe voltage waveform on the surface of substrate 1210 during more than compensation electric current Ic；And figure 15C is shown as gas current IIThe voltage waveform of substrate surface during less than compensation electric current Ic.
As shown in Figure 15 A, worked as IIDuring=Ic, the extension 1470 of ion energy is relative to be narrower than the institute in Figure 15 B What is shown works as II>The uniform expansion 1472 of ion energy during Ic or shown in figure 15 c work as II<Ion energy during Ic The uniform expansion 1474 of amount.Therefore, gas current compensating unit 1260 when gas current is higher (for example, passing through counterion The effect of electric current) the narrow extension of ion energy is realized, and the uniform expansion 1572,1574 for also achieving ion energy is controllable (for example, when being desired to have ion energy extension).
As shown in Figure 15 B, (work as I in the compensation of no gas currentI>Ic in the case of), in periodic voltage letter Between several positive parts, the voltage of substrate surface is changed into what is born smaller in a manner of ramp type, and this generates broader ion Energy spread 1572.Similarly, when using gas current compensation come increase compensation electric current level in more than such as Figure 15 C institute Gas current (the I shownI<During level Ic), between the positive part of periodic voltage function, the voltage of substrate surface is with oblique Slope formula mode becomes more negative, and produces broader uniform ion energy spread 1574.
Independent annex is can be implemented as with reference to figure 12, gas current compensating unit 1260 back, it can be alternatively It is added to switched-mode power supply 1206 and controller 1212.In other embodiments, (for example, as shown in Figure 13), ion Current compensation part 1260 can with other components described herein (for example, switched-mode power supply 106,206,806,1206 and The shell 1366 of ion energy control unit 220,820) share common.In this embodiment, there is provided to plasma chamber 1204 Periodic voltage function be referred to alternatively as modified periodic voltage function because it is included by from gas current compensating unit The periodic voltage function of 1260 gas current compensation modification.Controller 1212 can be in switched-mode power supply 1206 and gas current Being sampled at different moments to voltage at the electrical node of the output combination of compensation 1260.
As shown in Figure 13, exemplary gas current compensating unit 1360 is shown, it includes being coupled to switch The current source 1364 of the output end 1336 of mode power and it is coupled to current source 1364 and the electric current both output end 1336 Controller 1362.Figure 13 also show plasma chamber 1304, and have in plasma room capacitive element C1, C2 and from Electron current II.Go out as shown in the figure, C1 is represented and can be included but is not limited to insulating materials, substrate, substrate support and e- cards The natural capacity (being also referred to as effective capacitance herein) of the associated part in the room 1304 of disk, and C2 represent sheath layer capacitance and miscellaneous Spurious capacitance.In this embodiment, to plasma chamber 1304 provide and in V0Locating measurable periodic voltage function can be with It is referred to as modified periodic voltage function, because it is included by the periodic voltage function of gas current compensation Ic modifications.
Sheaths (being also referred to as plasma sheath herein) are close to the layer and possibility of substrate surface in plasma It is that plasma processing chamber has a high density cation and the therefore wall of overall superfluous positive charge.The surface of sheaths contact leads to Often with the negative electrical charge for having dominance.Sheaths occur by velocity of electrons more faster than cation, therefore cause greater proportion Electronics reaches substrate surface or wall, hence in so that sheaths exhaust electronics.Sheaths thickness (λSheaths) be plasma characteristics (such as, etc. Plasma density and plasma temperature) function.
It should be noted that because of the C in this embodiment1Be the part associated with room 1304 it is intrinsic (herein Be referred to as effectively) electric capacity, so it be added to processing gain control access electric capacity.For example, some prior art sides Bias supply is coupled on the substrate with blocking capacitor by method using linear amplifier, and then utilizes stopping direct current electricity The monitoring voltage at container both ends controls its linear amplifier as feedback.Although in many embodiments disclosed herein, electricity Switched-mode power supply can be coupled to substrate support by container, but due to need not be used in several embodiments of the present invention every The feedback control of direct current capacitors, so need not so do.
With reference to figure 14 while with reference to figure 13, Figure 14 is to show the exemplary voltage (example at the Vo shown in Figure 13 Such as, modified periodic voltage function).In operation, current controller 1362 monitors the voltage at Vo, such as the following formula counting period The gas current of (as shown in Figure 14) during t：
(equation 1)
Gas current IIWith natural capacity (also referred to as effective capacitance) C1Any one of or both can be time-varying. Due to C1It is substantially invariable and is measurable for given instrument, so only needs to monitor Vo to realize compensation electric current Uninterrupted control.As described above, can be distributed to obtain the list of more ion energies (for example, go out as shown in figure 15 a), electricity Stream controller control electric current source 1364 is to cause IcWith IIOf substantially equal (or in alternative solution, according to equation 2 and IIIt is related). According to the method, even if when gas current reaches the level for the voltage for influenceing substrate surface, ion energy can also be kept Narrow extension.And in addition, if desired, the expansion of ion energy can be controlled as shown by Figure 15 B and 15C Exhibition, to produce extra ion energy in substrate surface.
Equally, figure 13 illustrates feedback line 1370, it can combine control ion energy distribution and use.For example, figure The value of Δ V (being also known as voltage step or Part III 1406 herein) shown in 14 represents instantaneous ion energy, and And it can be used for the part in many embodiments as feedback control loop.In one embodiment, according to equation formula 4, electricity Press step Δ V related to ion energy.In other embodiments, peak-to-peak voltage VPPCan be related to instantaneous ion energy.Alternatively, Peak-to-peak voltage VPPWith the slope dV of Part IV 14080The difference that/dt is multiplied by between time t product can be with instantaneous ion energy phase Close (for example, VPP–dV0/dt·t)
With reference next to Figure 16, the one exemplary embodiment of current source 1664 is shown, it can be used for realizing with reference to figure 13 Described in current source 1364.In this embodiment, the controllable negative DC voltage source being connected with series reactor L2 plays electric current The effect in source, it will be appreciated by those skilled in the art that in view of this specification, by other parts and/or can be configured Lai real Existing current source.
Figure 43 shows one embodiment of the method for the ion energy distribution of the ion on the surface of control collision substrate.Side Method 4300 to the substrate support in plasma processing chamber inner support substrate by applying modified periodic voltage function 4302 (referring to the modified periodic voltage functions 4402 in Figure 44) and start.Can via at least two ' knobs ' (such as from Electron current compensates IC(referring to the I in Figure 44CAnd supply voltage V 4404)PS(referring to the supply voltage 4406 in Figure 44) control warp The periodic voltage function of modification.Example components for producing supply voltage are the switched-mode power supplies 106 in Fig. 1.In order to Help explain supply voltage VPS, it is shown as being not coupled to gas current and gas current compensation in measurement herein.So Afterwards I is compensated in gas currentCThe first numerical value and the second value at modified periodic voltage function is sampled 4304.I is compensated for gas currentCEach numerical value choose modified periodic voltage function voltage at least two samples This.Sampling 4304 is performed to realize to gas current IIWith sheath layer capacitance CSheathsCalculating 4306 (or determine) 4306.It is this true Surely can relate to find gas current compensation ICIf substrate support is applied it to (or when applying it to the substrate supports During portion) narrow (for example, minimum) ion energy distribution function (IEDF) width will be produced.Calculating 4306 can also alternatively include Voltage step Δ V (also referred to as modified weeks are determined based on the sampling 4304 of the waveform of modified periodic voltage function The Part III 1406 of phase function of voltage).Voltage step Δ V can be related to the ion energy of the ion on the surface for reaching substrate. When finding gas current I firstIWhen, voltage step Δ V can be ignored.Sampling 4304 and meter will be provided in the discussion of figure 30 below Calculate 4306 details.
Once known ion electric current IIWith sheath layer capacitance CSheaths, method 4300 can move on to Figure 31 be related to set and supervise Control IEDF ion energy and the method 3100 of shape (for example, width).For example, Figure 46 shows that the change of supply voltage can be such as What influences the change of ion energy.Especially, the size of shown supply voltage reduces, so as to cause the reduction of ion energy Size.In addition, Figure 47 is shown, it is contemplated that in the case of narrow IEDF 4714, can compensate I by adjusting gas currentCTo make IEDF broadens.Alternatively or concurrently, method 4300 can be as performed various measurements with reference to described by figure 32-41, its profit With gas current II, sheath layer capacitance CSheathsWith the waveform other side of modified periodic voltage function.
In addition to ion energy and/or IEDF width is set, method 4300 can adjust modified periodic voltage function 4308 to keep ion energy and IEDF width.Especially, it can perform the ion-conductance to being provided by gas current compensating unit Stream compensation ICRegulation and regulation 4308 to supply voltage.In certain embodiments, the bus voltage V of power supply can be passed throughbus (for example, Fig. 3 bus voltage Vbus) control supply voltage.Gas current compensates ICControl IEDF width, and supply voltage control Ion energy processed.
After these regulations 4308, modified periodic voltage function 4304 can be sampled again, and can be again Secondary execution is to gas current II, sheath layer capacitance CSheathsWith voltage step Δ V calculating 4306.If gas current IIOr voltage step Δ V is different from defined numerical value (or in alternative solution, desired numerical value), then can adjust gas current compensation ICWith/ Or supply voltage 4308.May occur in which sampling 4304, calculate 4306 and adjust 4308 circulation, so as to keep ion energy eV and/ Or IEDF width.
Figure 30 shows another embodiment of the method for the ion energy distribution of the ion on the surface of control collision substrate. In some embodiments, as discussed above, it is desired to realize narrow IEDF width (for example, minimum IEDF width, or in alternative solution, ~6% full width at half maximum).In this way, method 3000 can provide modified periodic voltage function to room and to substrate support, with So that constant underlayer voltage at the surface of substrate be present, and therefore plasma arc voltage.This is then with the voltage of substantial constant The ion at sheaths both ends is accelerated, hence in so that ion can collide substrate with substantially the same ion energy, it is then Narrow IEDF width is provided.For example, in Figure 45, it is seen that regulation gas current compensation ICThe underlayer voltage between pulse can be caused VsubWith constant or substantial constant voltage, therefore IEDF is caused to narrow.
Assuming that without stray capacitance (referring to the periodic voltage function (V in Figure 450) last five cycles), in gas current Compensate ICEqual to gas current IIWhen realize this modified periodic voltage function.In alternative solution, stray electrical is being considered Hold CIt is spuiousIn the case of, according to equation 2, gas current compensation ICWith gas current IIIt is related：
(equation 2)
Wherein, C1It is effective capacitance (for example, natural capacity with reference to described in figure 3 and Figure 13).Effective capacitance C1Can be with the time Change is constant.For the purpose of present disclosure, narrow IEDF width can be in II=ICWhen or in alternative solution when meeting equation Exist when 2.Figure 45-50 uses nomenclature (nomenclature) II=IC, it will be appreciated that, these equatioies are only equatioies 2 Simplify, and the equation therefore used in 2 alternative Figure 45-50 of equation.Stray capacitance CIt is spuiousIt is the accumulation electricity of plasma chamber Hold, such as by power supply finding.Figure 45 illustrates eight cycles.
Method 3000, which can begin to substrate support (for example, substrate support 108 in Fig. 1), applies modified week Phase function of voltage is (for example, the modified periodic voltage in modified periodic voltage function or Figure 44 shown in Figure 14 Function 4402) 3002.Sampling 3004 can be carried out to the voltage of modified periodic voltage function at two or more moment, and And sampled according to this, at least one of slope dV of modified periodic voltage period of a function can be calculated0/ dt is (for example, arteries and veins The slope of part or Part IV 1408 between punching) 3006.At certain moment before decision-making 3010, effective capacitance C can be accessed1 (for example, the natural capacity C in Figure 131With the natural capacity C10 in Fig. 3) previously determined numerical value (for example, from memory or Input and access from user) 3008.Based on slope dV0/ dt, effective capacitance C1I is compensated with gas currentC, ion-conductance can be directed to as follows Stream compensation ICEach Numerical evaluation function f (equation 3)：
(equation 3)
If function f is true, gas current compensation ICEqual to gas current II, or in alternative solution so that equation 2 Be true, and have been carried out narrow IEDF width 3010 (for example, with reference to Figure 45).If function f is not true, can further adjust Gas current compensates IC3012, until function f is true.The another way for checking this situation is adjustable gas current compensation IC, Until it matches gas current II(or in alternative solution, meeting the relation of equation 2), there will be narrow IEDF is wide at this Degree.This regulation for compensating gas current Ic is can be seen that in Figure 45 and is narrowed produced by IEDF.In storage operation 3014 In can (for example, in memory) ion storage electric current IIIc is compensated with corresponding gas current.Gas current ICCan be as effective Electric capacity C1Equally change over time.
When meeting equation 3, gas current IIIt is known (because IC=IIOr because equation 2 is true).Therefore, method 3000 realize to gas current IIReal-time long-range and non-invasive measurement, without influenceing plasma.This causes some new Grain husk measurement, such as by with reference to figure 32-41 described in those measurements (for example, the remote monitoring of article on plasma volume density with it is reciprocity from The remote failure detection in daughter source).
In the compensation electric current of regulation 3012 ICWhen, ion energy will be likely to more wider than delta function, and ion energy will Similar to Figure 15 B, Figure 15 C or Figure 44 ion energy.However, once find compensation electric current ICMeet equation 2, IEDF will just go out It is existing, as shown in Figure 15 A or Figure 45 right part-it is with narrow IEDF width (for example, minimum IEDF width).This is Because work as IC=IIWhen (or alternatively when equation 2 is true), the voltage between the pulse of modified periodic voltage function causes The sheaths or underlayer voltage of substantial constant, and the therefore ion energy of substantial constant.In figures 4-6 can, underlayer voltage 4608 Including the pulse between constant potential portion.These pulses there is so short duration so that its to ion energy and IEDF influence can be ignored, and therefore underlayer voltage 4608 is treated as substantial constant.
The further detail below on each method and step in the method and step that is shown in Figure 30 is provided below.At one In embodiment, modified periodic voltage function can have the waveform such as the waveform shown in Figure 14 and may include first Partly (for example, Part I 1402), Part II (for example, 1404), Part III (for example, Part III 1406) and the 4th Partly (for example, Part IV 1408), wherein Part III can have voltage step Δ V, and Part IV can have slope dV0/dt.Slope dV0/ dt can be positive and negative or zero.Modified periodic voltage function 1400 can also be described as having including The pulse of Part I 1402, Part II 1404 and Part III 1406, and the part (Part IV between pulse 1408)。
Modified periodic voltage function can be measured as the V in Fig. 30And it may occur in which as the modified week in Figure 44 Phase function of voltage 4402.Modified periodic voltage function 4402 by supply voltage 4406 by (being also referred to as periodic voltage letter Number) combine and produce with gas current compensation 4404.Supply voltage 4406 is mainly responsible for producing and makes modified cycle electricity Press the pulse shaping of function 4402, and gas current compensation 4404 be mainly responsible for producing and make part between pulse into Shape, it is typically the voltage of straight incline.Increase gas current compensation Ic causes the size of the slope of the part between pulse to subtract It is small, as seen in Figure 45.The size of reduction supply voltage 4606 causes the size of the amplitude of pulse and modified periodic voltage The reduction of the peak-to-peak voltage of function 4602, as seen in Figure 46.
In the case where power supply is switched-mode power supply, first switch T1 and second switch T2 switch figure can be applied 4410.For example, first switch T1 can be embodied as the switch T1 in Fig. 3, and second opening of being embodied as in Fig. 3 of second switch T2 Close T2.Two switches are shown as having identical switch time, but 180 ° of out-phase.In other embodiments, switch can Slight phase offset with all phase offsets slight as shown in Figure 4 etc.When first switch T1 is opened, power supply Voltage is drawn to largest amount, and it is negative value in Figure 44, because power supply has negative bus voltage.Second switch T2 is in this cycle Period closes, to cause supply voltage 4406 to isolate with ground.As switch reversely (reverse), supply voltage 4406 is close to simultaneously And just over (pass) the earth.In the embodiment illustrated, two pulse widths be present, but this is not essential. In other embodiments, pulse width can be identical for all cycles.In other embodiments, pulse width can change in good time Or modulation.
Modified periodic voltage function may be used on substrate support 3002, and in modified periodic voltage function Reach before substrate support last can sampling 3004 be V at access point0(for example, in switched-mode power supply and effectively Between electric capacity).Unmodified periodic voltage function (or supply voltage 4406 in Figure 44) may originate from opening in such as Figure 12 Close the power supply of mode power 1206 etc.The gas current that gas current compensation 4404 in Figure 44 may originate from such as Figure 12 is mended Repay the current source of the gas current compensating unit 1360 in part 1260 or Figure 13.
A part for modified periodic voltage function or whole modified periodic voltage function can be sampled 3004.For example, can Part IV (for example, Part IV 1408) sampled.Sampling 3004 can be in power supply and substrate support Between perform.For example, in Fig. 1, sampling 3004 can be performed between switched-mode power supply 106 and supporting part 108.For example, In Fig. 1, sampling 3004 can be performed between switched-mode power supply 106 and supporting part 108.In figure 3, can be in inductor L1 with consolidating Execution samples 3004 between having electric capacity C10.In one embodiment, can be between electric capacity C3 and natural capacity C10 in V0Hold at place Row sampling 3004.Due to natural capacity C10 and represent that the element (R2, R3, C1 and C2) of plasma can not be accessed for real-time Measurement, therefore the left side of natural capacity C10 generally in figure 3 performs sampling 3004.Although natural capacity C10 is not locating generally Measured during reason, but its is commonly known constant, and therefore can be configured during manufacture.Meanwhile in some cases, Natural capacity C10 can be changed over time.
Although in some embodiments, it is only necessary to two samples of modified periodic voltage function, in other implementations In example, each cycle that can be directed to modified periodic voltage function chooses hundreds of, thousands of or thousands of individual samples.For example, Sample rate can be more than 400kHz.These sample rates realize to the more accurate of modified periodic voltage function and its shape and Detailed monitoring.Herein in identical texture (vein), the more detailed monitoring to periodic voltage function allows to the more accurate of waveform Compare：Between different cycles, between different technology conditions, between different process, between different chamber, it is not homologous between etc..For example, With these sample rates, can distinguish the periodic voltage function shown in Figure 14 first, second, third and fourth part 1402, 1404th, 1406,1408, this can be impossible with traditional sampling rate.In certain embodiments, realized compared with high sampling rate to voltage Step Δ V and slope dV0/ dt parsing, this is impossible in the art.In certain embodiments, can be to modified A part for periodic voltage function is sampled, without being sampled to other parts.
The multiple V carried out during time t (for example, Part IV 1408) can be based on0Measurement is to slope dV0/ dt is counted Calculate 3006.For example, linear fit is can perform so that a line is fitted into V0Value, wherein the slope of the line provides slope dVo/dt。 In another example, it may be determined that the V at the beginning and end of time t (for example, Part IV 1408) in fig. 140Value, and And a line can be fitted between the two points, wherein the slope of the line is given dVo/dt.These are only that can calculate pulse Between part slope dVoTwo ways in/dt many modes.
Decision-making 3010 can be used for by IEDF be tuned to narrow width (for example, minimum widith, or in alternative solution, 6% Full width at half maximum) iterative cycles part.Equation 3 is only equal to gas current I in gas current compensation IcI(or in alternative solution In, according to equation 2 and IIIt is related) in the case of remain true, only constant underlayer voltage and therefore constant and base be present in it Occur in sheet in the case of single ion energy (narrow IEDF width).Visible (the V of constant underlayer voltage 4608 in figures 4-6 cansub)。 Therefore, gas current IIOr alternatively gas current compensation Ic is available in equation 3.
Alternatively, period 1 and second round can be directed to (being also referred to as the portion between pulse along Part IV 1408 Point) two values sampled, and first slope and the second slope can be determined for each cycle respectively.According to the two Slope, it may be determined that gas current compensates Ic, it is expected that gas current compensation Ic makes equation 3 be directed to the 3rd (but not yet measuring) slope and is Very.Therefore, gas current I can be estimatedI, it is contemplated that gas current IICorresponding to narrow IEDF width.These are only that can determine that narrow IEDF is wide Spend and corresponding gas current compensation Ic and/or corresponding gas current I can be foundIMany modes in two ways.
Regulation 3012 to gas current compensation Ic can relate to increased or decrease gas current compensation Ic, and to each tune The step-length of section is unrestricted.In certain embodiments, function f symbol can be used for determination to be increase or reduce ion in equation 3 Current compensation.If symbol is negative, gas current compensation Ic can be reduced, and plus sign may indicate that and need to increase gas current Compensate Ic.
Once identified gas current compensation Ic is equal to gas current II(or in other schemes, according to equation 2 and its It is related), method 3000 just may proceed to further set-point operation (referring to Figure 31) or remote chamber and source policer operation are (referring to figure 32-41).It is described further set-point operation may include set ion energy (referring also to Figure 46) and ion energy distribution or IEDF width (referring also to Figure 47).Source and room monitoring may include to monitor plasma density, source supply exception, plasma arc It is and other.
In addition, method 3000 is alternatively circulated back to sampling 3004 so as to continuous (or in alternative solution, periodically) more New gas current compensation Ic.For example, it is contemplated that in the case of compensating Ic to current gas current, sampling can be performed periodically 3004th, 3006, decision-making 3010 and regulation 3012 are calculated, to ensure to continue to meet equation 3.Meanwhile if renewal meets equation 3 Gas current compensation Ic, then can also update gas current IIAnd 3014 can be stored and be updated over numerical value.
Although method 3000 can find and set gas current compensation Ic to be equal to gas current II, or in alternative In case, meet equation 2, but not by gas current IC(or in alternative solution, will be from the case of being arranged to the numerical value Electron current ICIt is arranged to before the numerical value), it may be determined that realize the numerical value of the gas current compensation Ic needed for narrow IEDF width.Example Such as, Ic is compensated by applying the first gas current for the period 11And measure the first slope of the voltage between pulse dV01/ dt, and compensate Ic by applying the second gas current for second round2And measure of the voltage between pulse Two slope dV02/ dt, it may be determined that compensate Ic with the 3rd gas current3The 3rd associated slope dV03/ dt, wherein, it is expected equation 3 It is true.3rd gas current compensates Ic3Can compensate the gas current for producing narrow IEDF width if applied.Therefore, may be used Only by the single regulation compensated gas current come determine to meet equation 3 and therefore with gas current IICorresponding ion Current compensation Ic.Then method 3000 can move on to the method described in Figure 31 and/or Figure 32-41, and never by gas current IC It is arranged to realize the numerical value needed for narrow IEDF width.This embodiment be can perform to increase tuned speed.
Figure 31 shows the method for setting IEDF width and ion energy.Methods described is derived from the side shown in Figure 30 Method 3000, and left hand path 3100 (also referred to as IEDF branch roads) or (the also referred to as ion energy of right hand path 3101 can be chosen Measure branch road) in either path, it needs to set IEDF width and ion energy respectively.Ion energy eV and voltage step Δ V Or the Part III 1406 of Figure 14 modified periodic voltage function 1400 is directly proportional.Ion energy eV and voltage step Δ V Between relation can be written as equation 4：
(equation 4)
Wherein C1It is effective capacitance (for example, chuck electric capacity；Natural capacity C10 in Fig. 3；Or the natural capacity in Figure 13 ), and C C12It is sheath layer capacitance (for example, sheath layer capacitance C2 in sheath layer capacitance C4 or Fig. 3 in Fig. 3).Sheath layer capacitance C2It can wrap Include stray capacitance and depend on gas current II.Voltage step Δ V can be measured as modified periodic voltage function 1400 Part II 1404 and Part IV 1408 between voltage change.By control and monitoring voltage step Δ V, (it is Bus voltage V in supply voltage or such as Fig. 3busEtc bus voltage function), it is controllable and know ion energy eV。
Meanwhile IEDF width can be estimated according to equation 5：
(equation 5)
Wherein, it is C in CSeries connectionIn the case of I be II, or in C be CEffectivelyIn the case of I be IC.Time t be between pulse when Between, VPPIt is peak-to-peak voltage, and Δ V is voltage step.
In addition, sheath layer capacitance C2It can be used in a variety of calculating and policer operation.For example, can estimate as follows Debye sheaths away from From λSheaths：
(equation 6)
Wherein be permittivity of vacuum, and A be substrate area (or in alternative solution, the surface of substrate support Product).In some high voltage applications, equation 6 is written as equation 7：
(equation 7)
Furthermore it is possible to the e fields in sheaths are estimated as sheath layer capacitance C2, sheaths distance lambdaSheathsWith ion energy eV function. Sheath layer capacitance C2Together with gas current IIIt can also be used to determine plasma density n according to equation 8 togethere, wherein for independent The plasma of ionization, saturation current IsatWith compensating electric current ICIt is linearly related.
(equation 8)
Sheath layer capacitance C can be used2With saturation current IsatTo calculate the effective mass of the ion at substrate surface.Plasma Volume density ne, electric field in sheaths, ion energy eV, the DC current potentials V of the effective mass of ion and substrateDCIt is generally only via this The basic plasma parameter of indirect means monitoring in field.Present disclosure realizes the direct measurement to these parameters, because This realizes the more accurate monitoring in real time of article on plasma bulk properties.
As seen in equation 4, sheath layer capacitance C2It can also be used to monitor and control ion energy eV, such as Figure 31 ion energy Shown in amount branch road 3101.Ion energy branch road 3101 selects 3102 to start by receiving the user of ion energy.Then, from Sub- energy branch road 3101 can be configured 3104 to the primary power voltage of the switched-mode power supply of supply cycle function of voltage. At certain moment before the periodic voltage operation 3108 of sampling, it can also access gas current 3106 (for example, from memory access).Can Sampling period voltage 3108, and 3110 can be measured to the measurement of the Part III of modified periodic voltage function.Can According to the voltage step Δ V of modified periodic voltage function (also referred to as Part III (for example, Part III 1406)) come Calculate ion energy II3112.Then, ion energy branch road 3101 can determine that whether ion energy is equal to defined ion energy Amount 3114, and if so, then ion energy is at desired set-point and ion energy branch road 3101 can terminate. If ion energy ion energy not equal to defined in, the adjustable source voltage 3116 of ion energy branch road 3101, and Sampling 3108 is carried out to periodic voltage again.Then, ion energy branch road 3101 can loop through sampling 3108, measurement 3110, Calculate 3112, decision-making 3114 and set 3116, until ion energy is equal to defined ion energy.
The method for monitoring and controlling IEDF width is shown in Figure 31 IEDF branch roads 3100.IEDF branch roads 3100 include receiving user's selection 3150 of IEDF width and carry out sampling 3152 to current IEDF width.Then, decision-making 3154 determine defined in IEDF width whether be equal to current IEDF width, and if meeting decision-making 3152, then IEDF width It is (or defined) IEDF width as expected, and IEDF branch roads 3100 can terminate.If however, current IEDF width And not equal to defined IEDF width, then it can adjust gas current compensation Ic 3156.This determination 3154 and regulation 3156 can be with Continue in a looping fashion, until current IEDF width is equal to defined IEDF width.
In certain embodiments, IEDF branch roads 3100 can also be implemented to protect desired IEDF shapes.It can produce various IEDF shapes, and every IEDF shapes can be associated with different ions energy and IEDF width.For example, the first IEDF shapes can To be delta function, and the 2nd IEDF shapes can be chi square function.Other IEDF shapes can be cup.In fig. 11 It can be seen that the example of various IEDF shapes.
Knowing gas current IIIn the case of voltage step Δ V, ion energy eV can be directed to and solve equation 4.It can lead to Cross change supply voltage (it then causes voltage step Δ V to change) and carry out control voltage step Δ V.Larger supply voltage is led Voltage step Δ V increases are caused, and supply voltage reduction causes voltage step Δ V to reduce.In other words, increase supply voltage is led Cause larger ion energy eV.
Further, since the feedback loop works of system above and method to consecutive variations, therefore although due to plasma The change of body source or room condition or the deliberately change of plasma caused by regulation, it can keep desired and (or be defined ) ion energy and IEDF width.
Although describing Figure 30-41 according to single ionic energy, it will be recognized to those skilled in the art that producing simultaneously And these methods of desired (or defined) the IEDF width (or IEDF shapes) of monitoring and ion energy can be used further In producing and monitor two or more ion energies, each ion energy has IEDF width (or the IEDF shapes of their own Shape).For example, by providing the first supply voltage V in the first, the 3rd and period 5PSAnd at second, the 4th and the 6th week Interim offer second source voltage, the ion that can be directed to the surface for reaching substrate realize two differences and narrow ion energy (for example, Figure 42 A).Cause three different ions energy (for example, Figure 42 B) using three different electrical power voltages.By changing Apply the time of each supply voltage in multiple supply voltage during this, or apply each mains voltage level during this period The number in cycle, it can control the ionic flux (for example, Figure 42 C) of different ions energy.
The periodic voltage function discussed above for having illustrated how to be provided by power supply by gas current compensating unit with being provided Gas current compensation combination, its can be used for control during corona treatment reach substrate surface ion ion energy Amount and IEDF width and/or IEDF shapes.
Some controls in the control are realized by using some combinations of the following so far：(1) fixed waveform (continuous cycles of waveform are identical)；(2) there is the waveform of at least two parts, at least two part and ion energy and IEDF proportional (for example, Part III and Part IV 1406 and 1408 for being shown in Figure 14)；And (3) high sampling rate (example Such as, 125MHz), it realizes the accurate monitoring to the different characteristic of waveform.For example, prior art (such as linear amplifier to Substrate is sent and waveform as modified periodic voltage function class) in the case of, the undesirable change between the cycle causes Those prior art waveforms are difficult with to characterize ion energy or IEDF width (or IEDF shapes).
In the case where linear amplifier has been used to be biased substrate support, not yet see and carried out with high-speed The needs of sampling because waveform is not consistent from cycle to cycle, and therefore the parsing feature of waveform (for example, between pulse Part slope) will generally be not provided with using information.This useful information occurs really when having used fixed waveform, such as originally Originally open seen in content and relevant disclosure.
It is feasible that fixed waveform and high sampling rate disclosed herein, which further result in more accurate statistical observation,.Due to This increased precision degree, it can be monitored via the various characteristics for monitoring modified periodic voltage function in plasma source and room Plasma operation and treatment characteristic.For example, measurement to modified periodic voltage function realize to sheath layer capacitance and The remote monitoring of gas current, and can be monitored in the case where not knowing room technique or other room details.Some examples A large amount of modes of the system and method available for non-invasive monitoring and fault detect to source and room so far are then only shown In some modes.
Plasma source can be represented as the example of monitoring, and with reference to figure 14, the DC skews of waveform 1400 (hereinafter Be referred to as in " source ") health status.In another example, the top section 1404 of the pulse of modified periodic voltage function The slope of (Part II) can be associated with the damping effect in source.From the top section 1404 of horizontal line (horizontal) The standard deviation of slope (being shown as with the slope equal to 0) is to monitor the another of source health status based on the aspect of waveform 1400 One mode.On the other hand it is related to along the measurement of Part IV 1408 of modified periodic voltage function and samples V0The standard deviation of point Difference, and make the standard deviation associated with room ring.For example, this standard deviation and institute are monitored among being continuous impulse State standard deviation with the time it is increased in the case of, this may indicate that in room (such as in e- chucks) has ring.Ring can be with It is the sign of the bad electrical connection into room or room or the extra sign for being not intended to inductance or electric capacity.
Figure 32 shows that two transmitted according to one embodiment of present disclosure to substrate support are modified Periodic voltage function.When being compared, two modified periodic voltage functions can be used for room matching or in situ abnormal or event Barrier detection.For example, a modified periodic voltage function in two modified periodic voltage functions can be reference wave Shape, and the second modified periodic voltage function can be selected from plasma processing chamber during calibration.Two modified weeks Difference between phase function of voltage is (for example, peak-to-peak voltage VPPDifference) can be used for calibrate plasma processing chamber.Alternatively, the second warp The periodic voltage function of modification can during processing compared with reference waveform, and waveform characteristic any difference (for example, It is mobile) it may indicate that failure (for example, difference of the slope of the Part IV 3202 of modified periodic voltage function).
Figure 33 shows the gas current of the plasma source unstability or change that can indicate in plasma density Waveform.Can be to gas current IIIn fluctuation (as shown in Figure 33 all fluctuation) be analyzed to the failure in identifying system And exception.For example, the cyclic swing in Figure 33 may indicate that the low frequency in plasma source (for example, plasma electrical source 102) Unstability.Gas current IIIn this fluctuation may further indicate that the circulation change of plasma density.This designator and Qi Ke The possible breakdown or exception of instruction are only gas current IIRemote monitoring can be used for specific advantages many modes in one kind Mode.
Figure 34 shows the gas current I of the modified periodic voltage function with aperiodic shapeI.Gas current II This embodiment may indicate that the aperiodic fluctuation of such as plasma instability etc and the change of plasma density.It is this Fluctuation may further indicate that various plasma instabilitys, such as, electric arc, the formation of parasitic plasma or plasma density Drift.
Figure 35 shows the modified periodic voltage function for the failure that may indicate that in bias supply.Week shown by 3rd The top section (also referred herein as Part II) of phase shows to may indicate that bias supply (for example, the power supply in Figure 12 1206) abnormal behaviour of the ring in.This ring can be the instruction to the failure in bias supply.To further dividing for ring The recognizable characteristic for helping to identify the failure in power-supply system of analysis.
Figure 36 shows the modified periodic voltage function of dynamic (or non-linear) change of the electric capacity for the system of may indicate that. For example, the stray capacitance for depending non-linearly on voltage can cause this modified periodic voltage function.In another example, Failure in plasma breakdown or chuck can also result in this modified periodic voltage function.In the cycle shown by three In each cycle in, the non-linear dynamic change that may indicate that system capacitance in the Part IV 3602 in each cycle.For example, The non-linear change that may indicate that sheath layer capacitance, because other components of system capacitance are largely fixed.
Figure 37 shows the modified periodic voltage function for the change that may indicate that plasma density.It is shown through repairing The periodic voltage function changed shows slope dV0Dullness in/dt is mobile, and it may indicate that the change of plasma density.These lists Movement is adjusted to provide the direct instruction to expected event (such as, technique etching end point).In other embodiments, these are dull Movement may indicate that the failure in the technique in the absence of expected event.
Figure 38 shows the sampling of the gas current for different process operation, and the drift in its ion current may indicate that System drifting.Each data point can represent the gas current of given operation, and wherein acceptable limit is to define acceptable ion-conductance The user's definition or volitional check of stream.Drift in gas current (it gradually shifts gas current more than the acceptable limit onto) It is possible for may indicate that substrate damage.The monitoring of this type can also be with any amount of other tradition monitoring (such as optics omissions (optical omission), thickness measure etc.) combination.The monitoring of these traditional types in addition to monitoring ion current drift Existing monitoring and Statisti-cal control can be strengthened.
Figure 39 shows the sampling of the gas current for different technical parameters.In this diagram, gas current can be used as Distinguish different process and the figure of merit figure of different process characteristic.This data can be used in the exploitation of plasma recipes and process. For example, 11 process conditions can be tested, produce 11 shown ion current data points, and will can produce preferably from The process choice of electron current is ideal technology, or preferred process is used as in alternative solution.For example, can be by minimum gas current Select as ideal technology, and whether gas current hereafter associated with selection process may be used as judging technique with excellent The measurement for selecting process conditions to perform.In addition to similar traditional figure of merit characteristic (such as speed, selectivity and profile angle) or make For the replacement of similar traditional measure characteristic (such as speed, selectivity and profile angle), this figure of merit figure can be used for naming some non- Limitative examples.
Two modified periodic voltage functions that Figure 40 is monitored in the case of showing in room without plasma.It is comparable Compared with the two modified periodic voltage functions and use it for characterizing plasma chamber.In embodiment, first is modified Periodic voltage function can be reference waveform, and the second modified periodic voltage function can be the waveform of current monitor.Can In the process chamber without plasma in the case of (such as after room cleaning or preventive maintenance) choose these waveforms, and because This second waveform can be used for before room is discharged into (or returning to) production providing the checking to the electric state of room.
Figure 41 shows two modified periodic voltage functions available for checking plasma process.First is modified Periodic voltage function can be reference waveform, and the second modified periodic voltage function can be the waveform of current monitor. The waveform of current monitor can be compared with reference waveform, and may indicate that in addition can not using traditional monitoring method for any difference The parasitism and/or non-electrical capacitive impedance problems of detection.For example, seen ring can be detected and can be with table on Figure 35 waveform Show the ring in power supply.
Can with any measurement in the measurement shown in monitoring figure 32-41, while method 3000 circulate so as to update from Electron current compensation Ic, gas current IIAnd/or sheath layer capacitance CSheaths.For example, in each gas current IIAfterwards, chosen in Figure 38 Sampling, method 3000 can loop back to sampling 3004 to determine updated gas current II.In another example, as prison Control the result of operation, it may be desirable to gas current II, ion energy eV or IEDF width correction.Corresponding correction can be carried out, and And method 3000 can loop back to sampling 3004 and meet that the new gas current of equation 3 compensates Ic to find.
It would be recognized by those skilled in the art that the method that is shown in Figure 30, Figure 31 and Figure 43 and do not need it is any specific or Described order of operation, its be also not necessarily limited to by illustrate or figure in any order for implying.For example, it can set and monitor Measurement (Figure 32-41) is monitored before, during or after IEDF width and/or ion energy eV.
Figure 44 shows each waveform at the difference in system disclosed herein.In view of switched-mode power supply Switch block shown switching mode 4410, supply voltage VPS4406 (also referred to as periodic voltage functions herein), Gas current compensation Ic 4404, modified periodic voltage function 4402 and underlayer voltage VsubIn the case of 4412, IEDF tools There are shown width 4414 (it may be not drawn on scale) or IEDF shapes 4414.This width is wider than present disclosure and claimed For the width of " narrow width ".As seen, when gas current compensation Ic 4404 is more than gas current IIWhen, underlayer voltage Vsub 4412 and non-constant.IEDF width 4414 and underlayer voltage VsubThe voltage difference between sloping portion between 4412 pulse into Ratio.
In the case of this non-narrow IEDF width 4414, method disclosed herein requires that regulation gas current is mended Ic is repaid, until IC=II(or in alternative solution, according to equation 2 and IIIt is related).Figure 45 is shown in gas current compensates Ic Carry out final increase and be varied so that it matches gas current IIEffect.Work as IC=IIWhen, underlayer voltage Vsub4512 become base It is constant in sheet, and IEDF width 4514 narrow becomes narrow from non-.
Once having realized narrow IEDF, ion energy can be adjusted to desired by going out as shown in Figure 46 or defined Numerical value.Herein, supply voltage (or in alternative solution, the bus voltage V of switched-mode power supplybus) size reduce (for example, The maximum of the pulse of supply voltage 4606 is born amplitude and reduced).Therefore, Δ V1It is reduced to Δ V2, peak-to-peak voltage is same, from VPP1Reduce To VPP2Like that.The underlayer voltage V of substantial constantsub4608 size correspondingly reduces, thus by the size of ion energy from 4615 are reduced to 4614, while keep narrow IEDF width.
Regardless of whether regulation ion energy, can make IEDF width broaden, such as institute in Figure 47 after narrow IEDF width is realized Show.Here, it is assumed that II=IC(or in alternative solution, equation 2 provides IIAnd ICBetween relation), can adjust IC, therefore change The slope of part between the pulse of modified periodic voltage function 4702.Because gas current compensates Ic and gas current II It is unequal, underlayer voltage basically constant movement to non-constant.Further result is IEDF width 4714 from narrow IEDF 4714 Expand to non-narrow IEDF 4702.By IIIt is adjusted to further away from IC, the width of IEDF 4714 is bigger.
Figure 48 shows a pattern available for the supply voltage for realizing more than one ion energy level, wherein, often One ion energy level has the narrow width of IEDF 4814.The each cycle alternation of size of supply voltage 4806.This is produced for warp The alternation Δ V and peak-to-peak voltage in each cycle in the periodic voltage function 4802 of modification.Underlayer voltage 4812 then has The voltage of two substantial constants of alternation between the pulse of underlayer voltage.This produces two different ions energy, each ion Energy has the narrow width of IEDF 4814.
Figure 49 shows another pattern for the supply voltage that can be used for realizing more than one ion energy level, its In, each ion energy level has the narrow width of IEDF 4914.Herein, supply voltage 4906 is handed between two different sizes Become, but also two cycles of alternation time before alternation.As seen, mean ion energy is identical, as VPS 4906 Each cycle alternation is the same.This only shows VPSHow 4906 each other patterns can be used to realize same ion energy One example.
Figure 50 shows the supply voltage V that can be used for creating defined IEDF 5014PS5006 and gas current mend Repay Ic 5004 combination.Herein, alternating source voltage 5006 produces two different ions energy.In addition, by by ion Current compensation 5004 is adjusted to away from gas current II, the width of IEDF 5014 of expansible each ion energy.If ion energy Amount sufficiently closes to, and as it in shown embodiment, then the IEDF 5014 of two ion energies will be overlapping, produces one Big IEDF5014.Other modifications are also feasible, but this example is intended to illustrate how to VPS5006 and IC 5004 Regulation combination be used to realizing defined in ion energy and defined IEDF 5014.
With reference next to Figure 17 A and 17B, the block diagram for describing other embodiments of the invention is shown.As shown, this Substrate support 1708 in a little embodiments includes electrostatic chuck 1782, and electrostatic chuck supply 1780 is used for electrostatic chuck 1782 power supplies.In some variations, as shown in Figure 17 A, electrostatic chuck supply 1780 is arranged as directly to substrate support 1708 Power supply, and in other modifications, electrostatic chuck supply 1780 is arranged as combining switched-mode power supply to power.It should be noted that Series connection chuck can be powered by independent current source or be powered by using controller to realize net DC chucks function.In this DC coupling In (for example, without blocking capacitor) series connection chuck function of closing, it can make to have the undesirable interference in other RF sources most Smallization.
Figure 18 shows the block diagram for showing another embodiment of the present invention, wherein being generally used for producing plasma density Plasma electrical source 1884 is additionally configured to the substrate support 1808 and electrostatic chuck on the side of driving switch mode power 1806 Power supply 1880.In this embodiment, in plasma electrical source 1884, electrostatic chuck supply 1880 and switched-mode power supply 1806 Each can be located in independent component, or two or more in power supply 1806,1880,1884 are configured to In same physical assemblies.Advantageously, the embodiment shown in Figure 18 makes top electrode 1886 (for example, shower nozzle) being capable of electrical ground To obtain electricity symmetrically and reduce the level damaged caused by a small amount of arc event.
With reference to figure 19, the block diagram for showing one more embodiment of the present invention is shown.As shown, opening in this embodiment Close mode power 1906 be configured as powering to substrate support and room 1904, so as to substrate is biased and lighted (and Maintain) both plasmas without extra plasma electrical source (for example, without plasma electrical source 102,202, 1202nd, 1702,1884) for example, switched-mode power supply 1806 can be to be enough to light and maintain plasma simultaneously to substrate branch The dutycycle that bearing portion provides biasing carrys out work.
With reference next to Figure 20, it is to show the block diagram that the control of input parameter and control unit exports, the control unit Embodiment that can be with reference to described by referring to figs. 1 to 19 uses.To control unit show to be intended to it is as described herein to that can combine The exemplary control input and output that embodiment uses provide showing for simplification, and are not intended to as hardware diagram.In actual reality Apply in mode, shown control unit can divide among the several discrete parts that can be realized by hardware, software, firmware and combinations thereof Cloth.
With reference to above-described embodiment herein, the controller shown in Figure 20 can provide the controller described with reference to figure 1 112nd, the controller 212 and ion energy control unit 220 that are described with reference to figure 2, the controller 812 and ion that are described with reference to figure 8 Energy hole portion 820, the gas current compensating unit 1260 described with reference to figure 12, the current controller described with reference to figure 13 1362nd, controller 1712A and 1712B, Figure 18 and 19 that the Icc controls shown in Figure 16, Figure 17 A and 17B are shown respectively show respectively The function of one or more of the controller 1812 and 1912 gone out.
As shown, may be used as the parameter of the input of control section includes having referred to Figure 13 and 14 in greater detail DVo/dt and Δ V.As described above, dVo/dt can be used for coupled ion Energy distribution extension input Δ E to provide control signal The width that Icc, control signal Icc control extend with reference to figure 12,13,14,15A-C and Figure 16 ion energy distribution described.This Outside, ion energy control input (Ei) can be used for producing ion energy control signal (for example, influenceing with reference to optional feedback Δ V Vbus shown in Fig. 3), to realize referring to figs. 1 to 11 (definition) ion energy distributions desired in greater detail.And can It is DC skew inputs to combine another parameter of many e- chucks embodiments, it provides electrostatic force for effective thermal control Wafer is maintained on chuck.
Figure 21 shows the plasma process system 2100 according to the embodiment of present disclosure.System 2100 includes envelope Close the plasma of the plasma 2104 of the top surface 2118 (and other plasma processes) for etching substrate 2106 Body process chamber 2102.Plasma is produced (for example, in situ by the plasma source 2112 powered by plasma electrical source 2122 Or long-range or projection).The plasma sheath electricity measured between plasma 2104 and the top surface 2118 of substrate 2106 Press VSheathsMake the ion from plasma 2104 accelerate to cross over plasma sheath 2115, cause accelerated ion collision to serve as a contrast The top surface 2118 at bottom 2106 and etch substrate 2106 (or be not affected by substrate 2106 photoresist protection part). Plasma 2104 is in plasma potential V relative to ground (for example, the wall of plasma processing chamber 2102)3.Substrate 2106 has There is lower surface 2120, lower surface 2120 is via electrostatic chuck 2111 and the top surface 2121 and substrate of electrostatic chuck 2111 Chuck current potential V between 2106ChuckSupporting part 2108 is remained to for electrostatically.Substrate 2106 is dielectric, and is therefore being pushed up There can be the first current potential V at portion surface 21181And there can be the second current potential V at lower surface 21202.Electrostatic chuck 2121 Top surface contacted with the lower surface 2120 of substrate, and therefore the two surfaces 2120,2121 are in same electricity Position V2.First current potential V1, chuck current potential VChuckWith the second current potential V2Biased via with the DC as caused by switched-mode power supply 2130 Or the AC waveforms of skew control, and provided via the first conductor 2124 and arrive electrostatic chuck 2111.Alternatively, led via first Body 2124 provides AC waveforms, and provides DC waveforms via optional second conductor 2125.It can be controlled via controller 2132 AC and the DC output of switched-mode power supply 2130, controller 2132 are additionally configured to each side of controlling switch mode power 2130 Face.
Ion energy and ion energy distribution are the first current potential V1Function.Switched-mode power supply 2130, which provides, trimmed is Influence desired first current potential V1AC waveforms, it is known that the desired first current potential V1Produce desired (or definition) ion Energy and ion energy distribution.AC waveforms can be RF and with such as Fig. 5, Fig. 6, Figure 11, Figure 14, Figure 15 a, Figure 15 b and Nonsinusoidal waveform shown in Figure 15 c.First current potential V1Can be proportional to the voltage Δ V shown in Figure 14 change.First Current potential V1Also equal to plasma potential V3Subtract plasma sheath voltage VSheaths.But due to plasma sheath voltage VSheaths(for example, 50V -2000V) is compared, plasma potential V3Usual very little (for example, being less than 20V), therefore the first current potential V1With Plasma sheath voltage VSheathsApproximately equal and purpose for embodiment can be considered equal.Therefore, because plasma Plasma arc voltage VSheathsIndication ion energy, therefore the first current potential V1It is proportional to ion energy distribution.By keeping constant first Current potential V1, plasma sheath voltage VSheathsIt is constant, and therefore essentially all ion accelerates via identical energy, and because This realizes narrow ion energy distribution.Plasma potential V3By the energy that plasma 2104 is imparted to via plasma source 2112 Measure.
The first current potential V at the top surface 2118 of substrate 21061Via the electrical capacitive charge from electrostatic chuck 2111 Formed with the combination from electronics and the charge accumulated of ion by sheaths 2115.AC from switched-mode power supply 2130 Waveform is trimmed to offset being produced at by ion and the electronics transfer of sheaths 2115 and the top surface 2118 of substrate 2106 The influence of raw charge accumulated, to cause the first current potential V1Keep substantial constant.
It is chuck current potential V by the chuck power that substrate 2106 remains to electrostatic chuck 2111ChuckFunction.Switched-mode power supply 2130 provide DC biasings or DC skews to AC waveforms, to cause the second current potential V2In with the first current potential V1Different current potentials.This electricity Potential difference causes chucking voltage VChuck.Can from the top surface 2221 of electrostatic chuck 2111 to substrate 2106 inside reference layer measurement Chucking voltage VChuck, wherein the reference layer include substrate interior except the lower surface 2120 of substrate 2106, (reference layer is serving as a contrast Accurate location alterable in bottom 2106) outside any absolute altitude (elevation).Therefore, chuck is by the second current potential V2Control And with the second current potential V2It is proportional.
In embodiment, the second current potential V2DC skews equal to the switched-mode power supply 2130 changed by AC waveforms (change sentence Talk about, there is the AC waveforms of DC skews, peak-to-peak voltage of the wherein DC skews more than AC waveforms).DC skews can be substantially greater than AC waveforms, the second current potential V is dominated with the DC components for causing switched-mode power supply 2130 to export2And negligible or AC points of ignorance Amount.
Current potential in substrate 2106 is in first and second current potential V1、V2Between change.Due to substrate 2106 and electrostatic chuck Coulomb attraction between 2111 is present, so chuck current potential VChuckCan be positive or negative (for example, V1>V2Or V1<V2), without pipe clamp Disk current potential VChuckPolarity why.
Switched-mode power supply 2130 can monitor with reference to controller 2132 deterministically and in the case of without sensor Each voltage.Especially, parameter (for example, slope and step) based on AC waveforms come deterministically monitoring ion energy (for example, Average energy and ion energy distribution).For example, plasma potential V3, ion energy and ion energy distribution with by switching molding The parameter of AC waveforms is proportional caused by formula power supply 2130.Especially, the Δ V (for example, see Figure 14) of the trailing edge of AC waveforms with First current potential V1It is proportional and therefore proportional to ion energy.By keeping the first current potential V1It is constant, ion energy distribution It can keep narrow.
Although it is unable to the first current potential of direct measurement V1And switched-mode power supply exports and first voltage V1Between correlation Electric capacity and processing parameter that can be based on substrate 2106 and change, but can be managed in weakness after time-out be gone and empirically determine Δ V and the first current potential V1Between proportionality constant.For example, found in the trailing edge Δ V of AC waveforms for 50V and empirically for giving In the case that fixed substrate and the proportionality constant of technique are 2, it may be desirable to the first current potential V1For 100V.Step electricity is described by equation 4 Press Δ V and the first current potential V1Ratio between (and being therefore also ion energy eV).Therefore, can be in plasma processing chamber In the case that 2102 inside are without any sensor, the knowledge of the AC waveforms based on switched-mode power supply determines the first current potential V1With And ion energy and ion energy distribution.In addition, when switched-mode power supply 2130 can monitor chuck with reference to controller 2132 Occur and whether occur (such as, if via chuck current potential VChuckSubstrate 2106 is remained into electrostatic chuck 2111).
By eliminating or reducing chuck current potential VChuckTo perform chuck (dechucking).This can be by by the second current potential V2It is equal to the first current potential V1To complete.In other words, DC skews and AC waveforms can be adjusted to cause chucking voltage VChuckClose to 0V.Compared with routinely going chuck method, system 2100 is realized removes chuck and therefore larger flux faster, because Both DC skews and AC waveforms can be adjusted to realize chuck.Equally, when DC and AC power supplies are in switched-mode power supply When in 2130, its circuit is more unified, more closely together, can via single controller 2132 come control (such as with DC and AC The canonical parallel of power supply sets and compared), and quickly change output.Chuck is removed by what the embodiments described herein was realized Speed it is also real after the extinguishing of plasma 2104 or at least after the electric power from plasma source 2112 is had been switched off Now remove chuck.
Plasma source 2112 can take many forms.For example, in embodiment, plasma source 2112 is in plasma The inside of body process chamber 2102 includes electrode, and it is established in room 2102 and lights and maintain the RF fields of plasma 2104.Another In one embodiment, plasma source 2112 includes the plasma source remotely projected, and it remotely produces ionization electromagnetic field, incited somebody to action The projection of ionization electromagnetic field is extended in process chamber 2102, and is lighted simultaneously in plasma processing chamber using ionization electromagnetic field And maintain plasma 2104.Reached however, the plasma source remotely projected also includes ionization electromagnetic field at plasma The field translator unit (for example, contact tube) passed through in the way of room 2102 is managed, during this period, electromagnetic field decay is ionized, to cause Field strength in plasma processing chamber 2102 is only the field strength when the field produces in remotely projection plasma source first 1/10th, 1 percent, one thousandth or even smaller ones.Plasma source 2112 is not drawn on scale.
Switched-mode power supply 2130 can float and therefore can be by the company of series connection between ground and switched-mode power supply 2130 The D/C power (not shown) connect is offset with any DC to be biased.Switched-mode power supply 2130 can be via switched-mode power supply AC and D/C power (for example, see Figure 22, Figure 23, Figure 26) or electric via the AC inside switched-mode power supply 2130 inside 2130 D/C power (for example, see Figure 24, Figure 27) outside source and switched-mode power supply 2130 provides the AC waveforms with DC skews. In embodiment, switched-mode power supply 2130 can be grounded and be coupled in series in switched-mode power supply 2130 and electrostatic chuck The floating D/C power of series coupled between 2111.
When switched-mode power supply 2130 includes both AC and D/C power, the controllable switch mode power of controller 2132 AC and DC outputs.When switched-mode power supply 2130 and D/C power are connected in series, controller 2132 can only controlling switch pattern electricity The AC outputs in source 2130.In alternative embodiments, the controllable D/C power for being coupled to switched-mode power supply 2130 of controller 2130 With switched-mode power supply 2130 both.It would be recognized by those skilled in the art that though it is shown that single controller 2132, but may be used also Implement other controllers to control the AC waveforms and DC that provide to electrostatic chuck 2111 to offset.
Electrostatic chuck 2111 can be dielectric (for example, ceramics) and therefore substantially stop D/C voltage by, or its Can be semiconductive material, such as doped ceramics.In any case, electrostatic chuck 2111 is on the top of electrostatic chuck 2111 There can be second voltage V on portion surface 21212, electrostatic chuck 2111 is coupled to substrate 2106 by voltage capacitor, and (generally electricity is situated between Matter) top surface 2118 to form first voltage V1。
The shape and size of plasma 2104 are not necessarily drawn to scale.For example, it can be defined by a certain plasma density The edge of plasma 2104, in the case, shown plasma 2104 not any particular plasma to be considered Volume density is drawn.Similarly, at least some plasma densitys fill whole plasma processing chamber 2102, but regardless of shown The shape of plasma 2104 how.The shown shape of plasma 2104 is directed primarily to show sheaths 2115, sheaths 2115 With plasma density substantially smaller than plasma 2104.
Figure 22 shows another embodiment of plasma process system 2200.In the embodiment illustrated, switch Mode power 2230 includes the D/C power 2234 and AC power supplies 2236 being connected in series.Controller 2232 is configured as by controlling AC The waveform of power supply 2236 and D/C power 2234 bias or offset both to control the DC with switched-mode power supply 2230 to offset output AC waveforms.This embodiment also includes electrostatic chuck 2211, and it has the gate electrode or mesh electrode being embedded in chuck 2211 2210.Switched-mode power supply 2230 provides both AC and DC biasings to gate electrode 2210.DC biasing together with AC components (its substantially Bias and can therefore be ignored less than DC) the 3rd current potential V is established on gate electrode 2210 together4.As the 3rd current potential V4It is different from In substrate 2206 during current potential at the reference layer of any position (except the lower surface 2220 of substrate 2206), chuck current potential is established VChuckWith Coulombic chuck power, substrate 2206 is remained to electrostatic chuck 2211 by it.The reference layer is parallel to gate electrode 2210 Imaginary plane.AC waveforms pass through substrate 2206 from the capacitively coupled part by electrostatic chuck 2211 of gate electrode 2210 To control the first current potential V on the top surface 2218 of substrate 22061.Due to plasma potential V3Relative to plasma sheath Layer voltage VSheathsIt is negligible, therefore the first current potential V1With plasma sheath voltage VSheathsApproximately equal, and for reality Purpose is considered as equal.Therefore, the first current potential V1Equal to the current potential for being accelerated to the ion by sheaths 2215.
In embodiment, electrostatic chuck 2211 can be doped, to pass through card with sufficiently conductive property Any potential difference of the body of disk 2211 can be neglected, and therefore gate electrode or mesh electrode 2210 can lie substantially in Second current potential V2Identical voltage.
Gate electrode 2210 can be embedded in electrostatic chuck 2211, any conductive plane device parallel to substrate 2206 Part, and be configured as being biased and establish chuck current potential V by switched-mode power supply 2230Chuck.Although gate electrode 2210 are shown as being embedded in the low portion of electrostatic chuck 2211, but gate electrode 2210 can from substrate 2206 closer to or further Positioning.Gate electrode 2210 need not also have gate pattern.In embodiment, gate electrode 2210 can be solid electrode or have with non- The non-solid structure of grid shape (for example, checkerboard pattern).In embodiment, electrostatic chuck 2211 is that ceramic or other electricity are situated between Matter, and therefore the 3rd current potential V on gate electrode 22104Not equal to the first electricity on the top surface 2221 of electrostatic chuck 2211 Position V1.In another embodiment, electrostatic chuck 2211 is somewhat conductive doped ceramics, and therefore gate electrode 2210 On the 3rd current potential V4The the second current potential V that can be equal on the top surface 2221 of electrostatic chuck 22112。
It can be that the AC that non-sine exports is exported that switched-mode power supply 2230, which produces,.Switched-mode power supply 2230 can operate The DC and AC power supplies 2234,2236 of series connection, because D/C power 2234 is AC conduction types (AC-conductive), and AC electricity Source 2236 is DC conduction types (DC-conductive).The exemplary AC power supplies for not being DC conduction types is being provided with DC electricity Can vitiable some linear amplifiers when pressure or electric current.Reduce switching molding using AC conduction types and DC conduction types power supply The quantity of the part used in formula power supply 2230.For example, if D/C power 2234 is AC barrier types, AC bypass types or DC hinder Gear type part (for example, capacitor) must can be arranged in parallel with D/C power 2234.If AC power supplies 2236 is DC barrier types, DC bypass types or AC barrier types part (for example, inductor) must can be arranged in parallel with AC power supplies 2236.
In this embodiment, AC power supplies 2238 is typically configured as controllably applying electricity to electrostatic chuck 2211 Pressure biasing, so as to realize desired (or definition) ion energy point of the ion of the top surface 2218 of bombardment substrate 2206 Cloth.More particularly, AC power supplies 2236 is configured as by applying one or more to gate electrode 2210 with certain power level Specific waveforms realize desired (or definition) ion energy distribution.And more particularly, AC power supplies 2236 applies specific Power level is used and defined by the Wave data being stored in wave memorizer (not shown) to realize specific ion energy One or more voltage waveforms apply certain power level.It is thereby possible to select one or more specific ion bombarding energies To perform the controlled etching (or other plasma assisted process) to substrate 2206.In one embodiment, AC power supplies 2236 can utilize switching mode to configure (for example, see Figure 25-27).Switched-mode power supply 2230 (and more particularly AC power supplies 2236) the AC waveforms as described in each embodiment of present disclosure can be produced.
It would be recognized by those skilled in the art that gate electrode 2210 may not be necessary and other embodiments can be without grid Implement in the case of electrode 2210.It will also be appreciated by the skilled artisan that gate electrode 2210 is only that can be used for establishing chuck electricity Position VChuckMany devices an example.
Figure 23 shows another embodiment of plasma process system 2300.Shown embodiment include be used for Electrostatic chuck 2311 provides AC waveforms and the switched-mode power supply 2330 of DC biasings.Switched-mode power supply 2330 includes D/C power 2334 and AC power supplies 2336, the two power supplys can all be grounded.AC power supplies 2336 produces quiet to being embedded in via the first conductor 2324 The AC waveforms that first gate electrode or mesh electrode 2310 in electric card disk 2311 provide.AC power supplies 2336 is in first gate electrode or net Current potential V is established on shape electrode 23104.D/C power 2334 is produced via the second conductor 2325 to being embedded in electrostatic chuck 2311 The DC biasings that second gate electrode or mesh electrode 2312 provide.D/C power 2334 is built on the second gate electrode or mesh electrode 2312 Vertical current potential V5.Current potential V4And V5Can independently it be controlled via AC and D/C power 2336,2334 respectively.However, the first and second grid Electrode or mesh electrode 2310,2312 can be with capacitively coupled and/or can exist via the part in electrostatic chuck 2311 DC couplings be present between gate electrode or mesh electrode 2310,2312.Coupled if there is AC or DC, then can be with Coupling Potential V4With V5.It would be recognized by those skilled in the art that the first and second gate electrodes 2310,2312 may be provided at throughout electrostatic chuck 2311 In various positions, including first gate electrode 2310 is arranged to second grid electrode 2312 and is closer to substrate 2306.
Figure 24 shows another embodiment of plasma process system 2400.In this embodiment, switching mode electricity Source 2430 provides AC waveforms to electrostatic chuck 2411, and it is inclined to export the DC provided by D/C power 2434 for wherein switched-mode power supply 2430 Put to offset.The AC waveforms of switched-mode power supply 2430 have the waveform that is selected by controller 2435, so as to by from The ion of the plasma 2404 of narrow ion energy distribution bombards substrate 2406.AC waveforms can be nonsinusoidal waveform (for example, Square wave or pulse) and can be produced via the AC power supplies 2436 of switched-mode power supply 2430.Chuck is via from D/C power 2434 DC offset and control, D/C power 2434 controls by controller 2433.D/C power 2434 can be on ground and switched-mode power supply Series coupled between 2430.Switched-mode power supply 2430 is to float, to cause its DC biasings to be set by D/C power 2434.
Although it would be recognized by those skilled in the art that shown embodiment show two independent controls 2433, 2435, but can be by these controller combinations to single functional unit, equipment or system (such as, optional controller 2432).Separately Outside, can be with Coupling Control Unit 2433 and 2435, so as to communicate with one another and shared processing resources.
Figure 25 shows the further embodiment of plasma process system 2500.Shown embodiment includes switching molding Formula power supply 2530, switched-mode power supply 2530 produce the AC waveforms that can have the DC provided by D/C power (not shown) to offset. The switched-mode power supply can control via optional controller 2535, and optional controller 2535 controls including voltage and current Device 2537,2539.Switched-mode power supply 2530 can be included with the controllable of the voltage output controlled by voltage controller 2537 Voltage source 2538 processed and the controllable current source 2540 exported with the electric current controlled by current controller 2539.Controllable voltage Can be in be arranged in parallel with current source 2538,2540.Controllable current source 2540 is configured as plasma 2504 and substrate Gas current between 2506 compensates.
Voltage and current controller 2537,2539 can be coupled and communicated with one another.Voltage controller 2537 can also be controlled The switch output 2539 of controllable voltage source 2538 processed.Switch output 2539 may include two switches in parallel as shown, Or it may include any electricity that the output of controllable voltage source 2538 is converted to desired AC waveforms (for example, nonsinusoidal waveform) Road.Via described two switches, controlled voltage or AC waveforms from controllable voltage source 2538 can be with controllable current sources 2540 controlled current flow output is combined, to produce the output of the AC waveforms of switched-mode power supply 2530.
Controllable voltage source 2538 is shown as having given polarity, it will be recognized to those skilled in the art that opposite pole Property be equivalent to shown polarity.Alternatively, it can control voltage and current source 2538,2540 can together with switch output 2539 To be the part of AC power supplies 2536, and AC power supplies 2536 can be with the DC electricity inside or outside switched-mode power supply 2530 Source (not shown) is arranged in series.
Figure 26 shows the another embodiment of plasma process system 2600.In the embodiment illustrated, switching molding Formula power supply 2630 provides the AC waveforms with DC skews to electrostatic chuck 2611.The AC components of the waveform are via defeated by switching Go out the parallel combination in 2639 controllable voltage sources 2638 being connected to each other and controllable current source 2640 to produce.DC skew by The D/C power 2634 of series coupled produces between ground and controllable voltage source 2638.In embodiment, D/C power 2634 can be It is floating and ungrounded.Similarly, switched-mode power supply 2630 can be floating or ground connection.
System 2600 can include one or more controllers of the output for controlling switch mode power 2630.First Controller 2632 for example can carry out controlling switch mode power 2630 via the controller 2635 of second controller 2633 and the 3rd Output.Second controller 2633 can be controlled such as the DC skews of the switched-mode power supply 2630 as caused by D/C power 2634.3rd Controller 2635 can be by controlling controllable voltage source 2638 and controllable current source 2640 come controlling switch mode power 2630 AC waveforms.In embodiment, voltage controller 2637 controls the voltage output of controllable voltage source 2638, and electric current Controller 2639 controls the electric current in controllable current source 2640.Voltage and current controller 2637,2639 can communicate with one another and It can be a part for the 3rd controller 2635.
It would be recognized by those skilled in the art that description controller is relative to the various configurations of power supply 2634,2638,2640 It is restricted that above example, which is not, and can also implement various other configurations, without departing from present disclosure.For example, the Three controllers 2635 or voltage controller 2637 can be controlled between controllable voltage source 2638 and controllable current source 2640 Switch output 2639.As another example, second and the 3rd controller 2633,2635 can communicate with one another (although not showing so Go out).It should also be understood that the polarity in controllable voltage and current source 2638,2640 is only exemplary and is not intended to limit Property.
2639 can be exported to make AC waveform shapings come Operation switch by alternately switching two paralleling switches.Switch defeated Going out 2639 may include any kind of switch, including but not limited to MOSFET and BJT.In a modification, D/C power 2634 can Be arranged on controllable current source 2640 and between electrostatic chuck 2611 (in other words, D/C power 2634 can be float ), and switched-mode power supply 2630 can be grounded.
Figure 27 shows another embodiment of plasma process system 2700.In this modification, switched-mode power supply 2734 are grounded again, and without being incorporated into switched-mode power supply 2730, herein, D/C power 2734 is individual components and to whole Individual switched-mode power supply 2730 (rather than only part in switched-mode power supply 2730) provides DC skews.
Figure 28 shows the method 2800 according to the embodiment of present disclosure.Method 2800 includes substrate being placed on Operation 2802 in gas ions room.Method 2800 is additionally included in the operation 2804 that plasma is formed in plasma chamber.It is this Plasma can be formed in situ or be formed via long-range projection source.Method 2800 also includes Switching Power Supply operation 2806.Switch Power operation 2806 is related to the electric power that controllably switch arrives substrate, so as to apply periodic voltage function to substrate.The cycle Function of voltage can be considered as impulse waveform (for example, square wave) or AC waveforms, and including the DC by being connected with switched-mode power supply DC caused by power supply is offset.Therefore and switching molding in embodiment, D/C power can be incorporated into switched-mode power supply, and The AC power supplies series connection of formula power supply.DC skews produce potential difference between the reference layer in the top surface and substrate of electrostatic chuck, And this potential difference is referred to as chuck current potential.Substrate is remained to electrostatic chuck by the chuck current potential between electrostatic chuck and substrate, Therefore prevent substrate from moving during processing.Method 2800 also includes modulation operations 2808, wherein to week during multiple cycles Phase function of voltage is modulated.Desired (or definition) ion energy distribution of the modulated response at the surface of substrate, So as to realize on the basis of time averaging desired (or definition) ion energy distribution.
Figure 29 shows another method 2900 of the embodiment according to present disclosure.Method 2900 includes putting substrate Put the operation 2902 in plasma chamber.Method 2900 is additionally included in the operation that plasma is formed in plasma chamber 2904.The plasma can be formed in situ or be formed via long-range projection source.It is at least one that method 2900 also includes reception The operation 2906 that ion energy distribution is set.The setting received in operation 2906 is received can be indicated at the surface of substrate One or more ion energies.Method 2900 also includes Switching Power Supply operation 2908, wherein controllably switch arrives substrate Electric power, so as to realize the following：(1) desired (or definition) distribution of ion energy on the basis of time averaging； And the desired chuck current potential of (2) on the basis of time averaging.Power supply can have AC waveforms and DC to offset.
In a word, in other side, it is used to optionally produce expectation using switched-mode power supply the invention provides one kind (or definition) ion energy method and apparatus.It will be readily appreciated by those skilled in the art that it can make in the present invention The identical result substantially realized with embodiment as described herein is realized in many modifications and replacement, its purposes and its configuration. Therefore, the intention of disclosed example form is not limited the invention to.Many modifications, modifications and substitutions structure are each fallen within In the scope and spirit of present invention disclosed.

Claims (36)

1. a kind of method for establishing one or more plasma sheath voltages, including：
Modified periodic voltage function is provided to the substrate support of plasma chamber, wherein, the substrate support coupling To being configured in the substrate that is handled in the plasma, and wherein, the modified periodic voltage letter Number is included by the periodic voltage function of gas current compensation Ic modifications,
Wherein, the modified periodic voltage function includes the part between pulse and the pulse,
Wherein, the pulse is the function of the periodic voltage function, and
Wherein, the slope of the part between the pulse is the function of the gas current compensation Ic；
Access at least represents the effective capacitance value C of the electric capacity of the substrate support1；And
Identification will produce the gas current of the ion energy distribution function of the definition of the ion on the surface for reaching the substrate Ic numerical value is compensated, wherein, the identification is the effective capacitance C1The slope dV of the part between the pulse0/dt Function,
Wherein, the numerical value of the gas current compensation Ic meets such as minor function f：
<mrow> <mi>f</mi> <mrow> <mo>(</mo> <msub> <mi>I</mi> <mi>C</mi> </msub> <mo>)</mo> </mrow> <mo>=</mo> <mfrac> <mrow> <msub> <mi>dV</mi> <mn>0</mn> </msub> </mrow> <mrow> <mi>d</mi> <mi>t</mi> </mrow> </mfrac> <mo>-</mo> <mfrac> <msub> <mi>I</mi> <mi>C</mi> </msub> <msub> <mi>C</mi> <mn>1</mn> </msub> </mfrac> <mo>=</mo> <mn>0.</mn> </mrow>
2. according to the method for claim 1, wherein, the ion energy distribution of the definition is narrow ion energy distribution.
3. according to the method for claim 2, wherein, the ion energy distribution of the definition is described between the pulse It is corresponding with the constant voltage at the substrate surface during part.
4. the method according to claim 11, in addition to：
Gas current compensation Ic is arranged to the first numerical value；
Determine the symbol of the function f；And
If the symbol of the function f for just, increases the gas current compensation Ic, and if the function f The symbol is negative, then reduces the gas current compensation Ic.
5. according to the method for claim 1, wherein, it is described identification be included in two or more moment to the pulse it Between the voltage of the part sampled.
6. according to the method for claim 5, wherein, the identification includes being adopted according to described two or more moment The voltage of sample calculates the slope dV0/dt。
7. according to the method for claim 6, wherein, the identification is included for the modified periodic voltage function Slope dV described in two or more computation of Period0/ dt, wherein, each cycle in described two or more cycles with The different numerical value of the gas current compensation Ic are associated.
8. according to the method for claim 5, wherein, the identification is included during the period 1 and in phase second round Between the voltage of the part between the pulse is sampled, and the voltage sampled according at least to these is to calculate State slope dV0/dt。
9. according to the method for claim 1, wherein, gas current compensation Ic and the grade through the plasma from The gas current I of daughter sheathsIIt is linearly related.
10. according to the method for claim 9, wherein, the gas current compensates Ic according to below equation and the ion Electric current IIIt is linearly related：
Wherein, C1It is the effective capacitance as seen by bias supply of the plasma chamber, and CIt is spuiousIt is the plasma chamber Accumulate stray capacitance as seen by the bias supply.
11. the method according to claim 11, wherein, the effective capacitance C1Change over time.
12. according to the method for claim 10, wherein, the gas current compensation Ic is changed over time.
13. according to the method for claim 1, in addition to the substrate support provide the modified periodic voltage Function, to cause ion with the surface of the first ion energy arrival substrate.
14. according to the method for claim 13, wherein, the modified periodic voltage function have with described first from The corresponding first voltage step of sub- energy.
15. according to the method for claim 14, include the second value by gas current compensation Ic to described Substrate support provides the modified periodic voltage function, so as to widen the ion energy distribution function.
16. according to the method for claim 14, wherein, carried in the adjacent periods of the modified periodic voltage function For the first voltage step and second voltage step.
17. according to the method for claim 13, wherein, the offer has to the density of the plasma can be neglected not The influence of meter.
18. a kind of be biased for plasma at the surface so as to the substrate in plasma processing chamber realizes definition Ion energy method, methods described includes：
Applying to substrate support includes the modified periodic voltage of the periodic voltage function by gas current compensation Ic modifications Function, the modified periodic voltage function include the part between pulse and the pulse；
At least one cycle of the modified periodic voltage function is sampled, to produce voltage data point；
The numerical value of the first ion energy at the substrate surface is estimated according to the voltage data point；And
Adjust the modified periodic voltage function, until first ion energy be equal to the definition ion energy,
Wherein, the numerical value of the gas current compensation Ic meets such as minor function f：
<mrow> <mi>f</mi> <mrow> <mo>(</mo> <msub> <mi>I</mi> <mi>C</mi> </msub> <mo>)</mo> </mrow> <mo>=</mo> <mfrac> <mrow> <msub> <mi>dV</mi> <mn>0</mn> </msub> </mrow> <mrow> <mi>d</mi> <mi>t</mi> </mrow> </mfrac> <mo>-</mo> <mfrac> <msub> <mi>I</mi> <mi>C</mi> </msub> <msub> <mi>C</mi> <mn>1</mn> </msub> </mfrac> <mo>=</mo> <mn>0</mn> <mo>,</mo> </mrow>
Wherein, C1It is the effective capacitance value for the electric capacity at least representing the substrate support, dV0/ dt is the institute between the pulse State the slope of part.
19. the method according to claim 11, in addition at least one week to the modified periodic voltage function Phase is sampled, and the numerical value of first ion energy is calculated after each voltage increase of the regulation.
20. according to the method for claim 18, wherein, the estimation is the function of the gas current as input.
21. according to the method for claim 18, wherein, the gas current is the function of the gas current compensation.
22. according to the method for claim 21, wherein, make in the estimation to the numerical value of first ion energy Use below equation：
Wherein, Δ V is the voltage step, C1It is the effective capacitance as seen by bias supply of the room, and CSheathsIt is described The sheath layer capacitance of plasma sheath, it depends on the gas current.
23. according to the method for claim 22, wherein, the regulation includes the regulation modified periodic voltage function The step voltage Δ V, until first ion energy be equal to the definition ion energy.
24. according to the method for claim 18, in addition to the first numerical value that the gas current is compensated is changed into the second number Value, so as to widen the width of the distribution of the ion energy.
25. the method according to claim 11, wherein, the application and the plasma adjusted to the plasma Volume density has negligible influence.
26. according to the method for claim 18, wherein, the regulation includes regulation bias supply voltage, until described the One ion energy is equal to the ion energy of the definition.
27. a kind of to realize the method for ion energy distribution function width, methods described includes：
Being there is provided to the substrate support of plasma processing chamber is included by the periodic voltage function of gas current compensation Ic modifications Modified periodic voltage function, the modified periodic voltage function include the part between pulse and the pulse；
In the first moment and the voltage of waveform sampling at least two at the second moment from the modified periodic voltage function；
The slope of at least two voltage is calculated as dV/dt；
By the slope compared with known reference slope, so as to corresponding with ion energy distribution function width；And
The modified periodic voltage function is adjusted, to cause the slope to refer to slope close to described,
Wherein, the numerical value of the gas current compensation Ic meets such as minor function f：
<mrow> <mi>f</mi> <mrow> <mo>(</mo> <msub> <mi>I</mi> <mi>C</mi> </msub> <mo>)</mo> </mrow> <mo>=</mo> <mfrac> <mrow> <msub> <mi>dV</mi> <mn>0</mn> </msub> </mrow> <mrow> <mi>d</mi> <mi>t</mi> </mrow> </mfrac> <mo>-</mo> <mfrac> <msub> <mi>I</mi> <mi>C</mi> </msub> <msub> <mi>C</mi> <mn>1</mn> </msub> </mfrac> <mo>=</mo> <mn>0</mn> <mo>,</mo> </mrow>
Wherein, C1It is the effective capacitance value for the electric capacity at least representing the substrate support, dV0/ dt is the institute between the pulse State the slope of part.
28. according to the method for claim 27, wherein, first moment occurs in the modified periodic voltage letter During several period 1, and phase second round in the modified periodic voltage function occurs for second moment Between.
29. according to the method for claim 27, wherein, first moment and second moment occur described through repairing During the same period of the periodic voltage function changed.
30. according to the method for claim 27, wherein, the sampling is performed with least 400kHz sample rate.
31. a kind of plasma process system, including：
Plasma processing chamber, the plasma processing chamber are configured to contain plasma；
Substrate support, the substrate support are placed in the plasma processing chamber and are positioned in plasma Support substrate during processing；
Power supply, the power supply to the substrate support provide periodic voltage function, the periodic voltage function have pulse and Part between the pulse；
Gas current compensating unit, the gas current compensating unit change the slope dV of the part between the pulse0/ Dt, include to be formed to what the substrate support provided by the periodic voltage function of gas current compensation Ic modifications through repairing The periodic voltage function changed；And
Controller, the controller are communicated with the power supply and the gas current compensating unit,
Wherein, the numerical value of the gas current compensation Ic meets such as minor function f：
<mrow> <mi>f</mi> <mrow> <mo>(</mo> <msub> <mi>I</mi> <mi>C</mi> </msub> <mo>)</mo> </mrow> <mo>=</mo> <mfrac> <mrow> <msub> <mi>dV</mi> <mn>0</mn> </msub> </mrow> <mrow> <mi>d</mi> <mi>t</mi> </mrow> </mfrac> <mo>-</mo> <mfrac> <msub> <mi>I</mi> <mi>C</mi> </msub> <msub> <mi>C</mi> <mn>1</mn> </msub> </mfrac> <mo>=</mo> <mn>0</mn> <mo>,</mo> </mrow>
Wherein, C1It is the effective capacitance value for the electric capacity at least representing the substrate support.
32. system according to claim 31, wherein, the controller adjusts the amplitude of the gas current compensation, directly To the ion energy distribution function of the definition for the ion for realizing the surface for reaching the substrate.
33. system according to claim 31, wherein, the controller is additionally configured to identify the periodic voltage function The pulse amplitude, if providing the pulse of the periodic voltage function to the substrate support, generation is arrived Up to the ion energy of the definition of the ion on the surface of the substrate.
34. system according to claim 33, wherein, the controller adjusts the pulse of the periodic voltage function Amplitude, the ion energy of the definition of the ion until realizing the surface for reaching the substrate.
35. a kind of method for being used to monitor the gas current for the plasma for being configured as handling substrate, methods described include：
In the case of the gas current compensation with the first numerical value, first is carried out to modified periodic voltage function and is adopted Sample；
In the case of the gas current compensation with second value, the modified periodic voltage function is carried out Second sampling；
The modified periodic voltage of the function of time is determined as based on the described first sampling and the described second sampling The slope of function；And
The third value of the gas current compensation is calculated based on the slope, at the third value, on the substrate Constant voltage will exist at least one cycle memory of the modified periodic voltage function.
36. according to the method for claim 35, include the sheath at the plasma sheath both ends of the calculating plasma Layer voltage.
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