CN104752953B - A kind of GaAs base PHEMTs vertical cavity surface emitting laser - Google Patents

A kind of GaAs base PHEMTs vertical cavity surface emitting laser Download PDF

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CN104752953B
CN104752953B CN201510107058.0A CN201510107058A CN104752953B CN 104752953 B CN104752953 B CN 104752953B CN 201510107058 A CN201510107058 A CN 201510107058A CN 104752953 B CN104752953 B CN 104752953B
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gaas
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phemts
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CN104752953A (en
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王智勇
高鹏坤
王青
郑建华
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Beijing University of Technology
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Abstract

A kind of GaAs base PHEMTs vertical cavity surface emitting laser, the laser are made of GaAs base PHEMTs and VCSEL two parts, and the GaAs base PHEMTs and the VCSEL cutoff layer InGaP that is corroded are separated；The GaAs base PHEMTs are by the first buffer layer GaAs of molecular beam epitaxial growth, the Al in 15 cycles successively on gaas substrates0.22Ga0.78As/GaAs superlattice layers, raceway groove lower barrierlayer Al0.22Ga0.78As, channel layer In0.2Gao0.8As, space separation layer Al0.22Ga0.78As, planar sheet doping layers, barrier layer Al0.22Ga0.78The highly doped cap GaAs of As, N-type is formed；The VCSEL is by the 2nd GaAs cushions of molecular beam epitaxial growth, 34.5 couples of λ successively on etch stop layers InGaP0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer, Al under As N-types0.2Ga0.8As/GaAs active layers, 3 couples of λ0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8As p-type distribution Bragg reflectors layer, Al0.98Ga0.02As oxidation limiting layers, 21.5 couples of λ0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer, GaAs cap layers in As p-types.

Description

A kind of GaAs base PHEMTs vertical cavity surface emitting laser
Technical field
The present invention relates to compound semiconductor materials and device arts, more particularly to a kind of monolithic GaAs (GaAs) structure of base pseudomorphic high electron mobility transistor (PHEMT) vertical cavity surface emitting laser (VCSEL).
Background technology
Pseudomorphic high electron mobility transistor (PHEMT) has the spy of high frequency, high speed, high power gain and low-noise factor Point, is widely used in military, space and civil telecommunications field, such as millimetre-wave radar, electronic warfare, intelligence equipment, satellite communication and Radiate astronomy etc..PHEMT devices are chiefly used in the drive circuit of laser in field of high-speed optical communications.
In above-mentioned translaser structure, Laser output mode is edge emitting, and vertical cavity surface emitting laser is near Apply a kind of wider new type light source within several years, have the following advantages that：(1) resonator is small, is also easy to produce microcavity effect, and Low threshold is (sub- Milliampere magnitude) lasing；(2) resonator is shorter, thus longitudinal mode spacing is very big, and dynamic modulation frequency is high；(3) active area section is in Circle symmetric form, beam directionality is good, easily coupling；(4) light direction is suitable for parallel optical interconnecting and information perpendicular to substrate plane Processing；(5) device volume is small, can form two-dimensional array laser to high-density；(6) monolithic is epitaxially-formed, easy to life The quality examination and screening of long material, high yield rate.
So GaAs base PHEMTs and vertical cavity surface emitting laser (VCSEL) are integrated on same substrate, formed Single-chip-integrated GaAs base PHEMT and VCSEL material structures, the single-chip integration for realizing device are the important values of the present invention.
The content of the invention
It is a primary object of the present invention to provide a kind of GaAs base PHEMTs vertical cavity surface emitting laser, by GaAs bases PHEMT and VCSEL is integrated on same substrate, realizes GaAs base PHEMTs and VCSEL single-chip integrations.
The present invention provides a kind of GaAs base PHEMTs vertical cavity surface emitting laser, the laser by GaAs base PHEMTs and VCSEL two parts form, and the GaAs base PHEMTs and the VCSEL cutoff layer InGaP that is corroded are separated；The GaAs bases PHEMT is by the first buffer layer GaAs of molecular beam epitaxial growth, 15 cycles successively on gaas substrates Al0.22Ga0.78As/GaAs superlattice layers, raceway groove lower barrierlayer Al0.22Ga0.78As, channel layer In0.2Gao0.8As, space isolation Layer Al0.22Ga0.78As, planar sheet doping layers, barrier layer Al0.22Ga0.78The highly doped cap GaAs of As, N-type is formed；The corrosion Cutoff layer InGaP molecular beam epitaxial growths on the highly doped cap GaAs of the N-type form；The VCSEL in corrosion by cutting Only the 2nd GaAs cushions of molecular beam epitaxial growth, 34.5 couples of λ successively on layer InGaP0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8Distribution Bragg reflector layer, Al under As N-types0.2Ga0.8As/GaAs active layers, 3 couples of λ0/ 4 optical thicknesses Al0.9Ga0.1As/Al0.2Ga0.8As p-type distribution Bragg reflectors layer, Al0.98Ga0.02As oxidation limiting layers, 21.5 couples of λ0/4 The Al of optical thickness0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer, GaAs cap layers in As p-types.
In such scheme, the first buffer layer GaAs is used to provide smooth interface for the growth of subsequent epitaxial layer；Should The thickness of first buffer layer GaAs is 500nm.
In such scheme, the Al in 15 cycles0.22Ga0.78As/GaAs superlattice layers are used to reduce cushion electric leakage Stream, wherein, Al0.22Ga0.78The thickness of As is 10nm, and the thickness of GaAs is 1.5nm.
In such scheme, the raceway groove lower barrierlayer Al0.22Ga0.78As is used to provide a smooth boundary for raceway groove growth Face, while also utilize Al0.22Ga0.78As/In0..2Ga0.8As hetero-junctions is strapped in 2DEG in raceway groove；The raceway groove lower barrierlayer Al0.22Ga0.78The thickness of As is 50nm.
In such scheme, the space separation layer Al0.22Ga0.78As is used for donor impurity spur and 2DEG spaces Isolation, reduces ionization scattering process, ensures the high electron mobility of 2DEG in raceway groove；The space separation layer Al0.22Ga0.78As Thickness be 4nm.
In such scheme, that adulterated in the planar sheet doping layers is Si, dopant dose 3.0x1012cm-2。
In such scheme, that adulterated in the highly doped cap GaAs of N-type is Si, and doping Si concentration is 5 × 1018cm-3, N+- GaAs contacts to prepare for device with grid metal provides good Ohmic contact；The thickness of the highly doped cap GaAs of the N-type For 50nm.
In such scheme, the etch stop layers InGaP is used to separate the epitaxial structure of PHEMT and VCSEL, is corroding During play the role of corrode cut-off；The thickness of etch stop layers InGaP is 3nm.
In such scheme, the channel layer In0.2Ga0.8The thickness of As is 12nm, the barrier layer Al0.22Ga0.78The thickness of As Spend for 15nm.
In such scheme, distribution Bragg reflector layer is by 34.5 couples of λ under the N-type0/ 4 optical thicknesses Al0.9Ga0.1As/Al0.2Ga0.8As is formed.
In such scheme, distribution Bragg reflector layer is by 34.5 couples of λ under the N-type0/ 4 optical thicknesses Al0.9Ga0.1As/Al0.2Ga0.8As is formed, thick 4460nm.
In such scheme, the active layer Al0.2Ga0.8As/GaAs thickness 250nm.
In such scheme, the p-type distribution Bragg reflector layer is by 3 couples of λ0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8As is formed, thick 380nm.
In such scheme, the oxidation limiting layer Al0.98Ga0.02As thickness 40nm.
In such scheme, distribution Bragg reflector layer is by 21.5 couples of λ in the p-type0/ 4 optical thicknesses Al0.9Ga0.1As/Al0.2Ga0.8As is formed, thick 2780nm.
In such scheme, the cap layers GaAs thickness 10nm.
Beneficial outcomes
It can be seen from the above technical proposal that this single-chip-integrated GaAs base PHEMT provided by the invention and VCSEL materials Structure, be on the basis of conventional GaAs base PHEMTs epitaxial structure, grown etch stop layers InGaP, GaAs cushion, Al0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer, Al under As N-types0.2Ga0.8As/GaAs active layers, Al0.9Ga0.1As/Al0.2Ga0.8As p-type distribution Bragg reflectors layer, Al0.98Ga0.02As oxidation limiting layers, Al0.9Ga0.1As/ Al0.2Ga0.8Distribution Bragg reflector layer, GaAs cap layers in As p-types.For realizing VCSEL.InGaP is by PHEMT and VCSEL Separate, and in corrosion process, play the role of corroding cut-off.
In addition, this single-chip-integrated GaAs base PHEMT provided by the invention and VCSEL material structures, it is possible to achieve more Complicated circuit, such as single-chip integration pHEMT amplifiers and VCSEL.
Brief description of the drawings
Fig. 1 is the schematic diagram of single-chip-integrated GaAs base PHEMT and VCSEL material structures.
In figure：1st, GaAs substrates, 2, first buffer layer GaAs, the Al in 3,15 cycles0.22Ga0.78As/GaAs superlattices Layer, 4, raceway groove lower barrierlayer Al0.22Ga0.78As, 5, channel layer In0.2Gao0.8As, 6, space separation layer Al0.22Ga0.78As, 7, Planar sheet doping layers, 8, barrier layer Al0.22Ga0.78As, 9, N-type highly doped cap GaAs, 10, etch stop layers InGaP, 11, Two GaAs cushions, 12, Al0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer under As N-types, 13, Al0.2Ga0.8As/ GaAs active layers, 14, Al0.9Ga0.1As/Al0.2Ga0.8As p-type distribution Bragg reflector layers, 15, Al0.98Ga0.02As is aoxidized Limiting layer, 16, Al0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer in As p-types, 17, GaAs cap layers.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference Attached drawing, the present invention is described in more detail.
This single-chip-integrated GaAs base PHEMT and VCSEL material structures provided by the invention, are in conventional GaAs bases On the basis of PHEMT epitaxial structures, etch stop layers InGaP, GaAs cushion, Al grown0.9Ga0.1As/Al0.2Ga0.8As Distribution Bragg reflector layer, Al under N-type0.2Ga0.8As/GaAs active layers, Al0.9Ga0.1As/Al0.2Ga0.8As p-types are distributed cloth Glug mirror layer, Al0.98Ga0.02As oxidation limiting layers, Al0.9Ga0.1As/Al0.2Ga0.8Distributed Blatt reflective in As p-types Mirror layer, GaAs cap layers, for realizing VCSEL.InGaP separates PHEMT and VCSEL, and in corrosion process, plays corrosion and cut Only act on.
Conventional GaAs base PHEMTs material structure by grow successively on gaas substrates cushion GaAs, 15 cycles Al0.22Ga0.78As/GaAs superlattice layers, raceway groove lower barrierlayer Al0.22Ga0.78As, channel layer In0.2Ga0.8As, space isolation Layer Al0.22Ga0.78As, planar sheet doping layers Si, barrier layer Al0.22Ga0.78As and the highly doped cap GaAs of N-type are formed.
VCSEL material structures are by the GaAs cushions, the Al that grow successively on gaas substrates0.9Ga0.1As/Al0.2Ga0.8As Distribution Bragg reflector layer, Al under N-type0.2Ga0.8As/GaAs active layers, Al0.9Ga0.1As/Al0.2Ga0.8As p-types are distributed cloth Glug mirror layer, Al0.98Ga0.02As oxidation limiting layers, Al0.9Ga0.1As/Al0.2Ga0.8Distributed Blatt reflective in As p-types Mirror layer, GaAs cap layers are formed.
As shown in Figure 1, Fig. 1 is the signal of single-chip-integrated GaAs base PHEMT and VCSEL material structure provided by the invention Figure, the structure are made of GaAs bases pHEMT and VCSEL part, and the GaAs base PHEMTs and the VCSEL are corroded cutoff layer InGaP is separated.
The GaAs base PHEMTs are by the cushion GaAs of molecular beam epitaxial growth, 15 week successively on gaas substrates The Al of phase0.22Ga0.78As/GaAs superlattice layers, raceway groove lower barrierlayer Al0.22Ga0.78As, channel layer In0.2Ga0.8As, space every Absciss layer Al0.22Ga0.78As, planar sheet doping layers, barrier layer Al0.22Ga0.78The highly doped cap GaAs of As, N-type is formed.
Etch stop layers InGaP molecular beam epitaxial growths on the highly doped cap GaAs of the N-type form.
The VCSEL by etch stop layers InGaP successively the GaAs cushions of molecular beam epitaxial growth, Al0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer, Al under As N-types0.2Ga0.8As/GaAs active layers, Al0.9Ga0.1As/Al0.2Ga0.8As p-type distribution Bragg reflectors layer, Al0.98Ga0.02As oxidation limiting layers, Al0.9Ga0.1As/ Al0.2Ga0.8Distribution Bragg reflector layer, GaAs cap layers are formed in As p-types.
The cushion GaAs is used to provide smooth interface for the growth of subsequent epitaxial layer；First buffer layer GaAs's Thickness is 500nm.
The Al in 15 cycles0.22Ga0.78As/GaAs superlattice layers are used to reduce cushion leakage current, wherein, Al0.22Ga0.78The thickness of As is 10nm, and the thickness of GaAs is 1.5nm.
The raceway groove lower barrierlayer Al0.22Ga0.78As is used to provide a smooth interface for raceway groove growth, while also sharp Use Al0.22Ga0.78As/In0.2Ga0.8As hetero-junctions is strapped in 2DEG in raceway groove；The raceway groove lower barrierlayer Al0.22Ga0.78As Thickness be 50nm.
The space separation layer Al0.22Ga0.78As is used to isolate donor impurity spur and 2DEG spaces, reduces electricity From scattering process, ensure the high electron mobility of 2DEG in raceway groove；The space separation layer Al0.22Ga0.78The thickness of As is 4nm.
That adulterated in the planar sheet doping layers is Si, dopant dose 3.0x1012cm-2。
That adulterated in the highly doped cap GaAs of N-type is Si, and doping Si concentration is 5x1018cm-3, N+- GaAs and grid Metal contact is prepared for device provides good Ohmic contact；The thickness of the highly doped cap GaAs of the N-type is 50nm.
The channel layer In0.2Ga0.8The thickness of As is 12nm, the barrier layer Al0.22Ga0.78The thickness of As is 15nm.
The etch stop layers InGaP is used to separate the epitaxial structure of PHEMT and VCSEL, is played in corrosion process Corrode cut-off effect；The thickness of etch stop layers InGaP is 3nm.
Distribution Bragg reflector layer is by 34.5 couples of λ under the N-type0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8As is formed.
Distribution Bragg reflector layer is by 34.5 couples of λ under the N-type0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8As is formed, thick 4460nm.
The active layer Al0.2Ga0.8As/GaAs thickness 250nm.
The p-type distribution Bragg reflector layer is by 3 couples of λ0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8As structures Into thick 380nm.
The oxidation limiting layer Al0.98Ga0.02As thickness 40nm.
Distribution Bragg reflector layer is by 21.5 couples of λ in the p-type0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8As is formed, thick 2780nm.
The cap layers GaAs thickness 10nm.
The life of this single-chip-integrated GaAs base PHEMT and VCSEL material structures provided by the invention is further illustrated below Growth process.
Step 1, the first buffer layer GaAs for growing 200nm on gaas substrates；
Step 2, on first buffer layer GaAs grow 15 cycles 10nm Al0.22Ga0.78As/1.5nm GaAs surpass Lattice；
Step 3, the Al 15 cycles0.22Ga0.78The raceway groove lower barrierlayer of 50nm is grown on As/GaAs superlattice layers Al0.22Ga0.78As；
Step 4, under the channel barrier layer Al0.22Ga0.78The channel layer In of 12nm is grown on As0.2Ga0.8As；
Step 5, in channel layer In0.2Ga0.8The space separation layer Al of 4nm is grown on As0.22Ga0.78As；
Step 6, in space separation layer Al0.22Ga0.78The upper growth plane doped layers of As, the dosage for adulterating Si are 3.0x1012cm-2；
Step 7, on planar sheet doping layers grow 15nm barrier layer A10.22Ga0.78As；
Step 8, in barrier layer Al0.22Ga0.78The highly doped cap GaAs of 50nmN types is grown on As；
Step 9, the In for growing on the highly doped cap GaAs of N-type thickness 3nm0.5Ga0.5P etch stop layers；
Step 10, in In0.5Ga0.5The GaAs cushions 2 of thickness 300nm are grown on P etch stop layers；
Step 11,34.5 couples of λ for growing in second buffer layer thickness 4460nm0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8Distribution Bragg reflector layer under As N-types；
Step 12, the Al that thickness 250nm is grown under N-type on distribution Bragg reflector layer0.2Ga0.8As/GaAs active layers；
Step 13,3 couples of λ for growing on active layer thickness 380nm0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8As P-type distribution Bragg reflector layer；
Step 14, the Al for growing on p-type distribution Bragg reflector layer thickness 40nm0.98Ga0.02As oxidation limiting layers；
Step 15,21.5 couples of λ for growing in oxidation limiting layer thickness 2780nm0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8Distribution Bragg reflector layer in As p-types；
Step 16, the growth thickness 10nm GaAs cap layers on distribution Bragg reflector layer in p-type.
The single-chip-integrated GaAs base PHEMT and VCSEL material structures of the present invention, it is contemplated that epitaxial growth and device performance two The actual requirement of aspect, each layer thickness, dopant dose can be adjusted according to specific material and device index within the specific limits It is whole.Under the premise of meeting that epitaxial growth is achievable, single-chip-integrated GaAs base PHEMT and VCSEL are realized.
Particular embodiments described above, has carried out the purpose of the present invention, technical solution and beneficial effect further in detail Describe in detail it is bright, it should be understood that the foregoing is merely the present invention specific embodiment, be not intended to limit the invention, it is all Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done, should be included in the guarantor of the present invention Within the scope of shield.

Claims (10)

  1. A kind of 1. GaAs base PHEMTs vertical cavity surface emitting laser, it is characterised in that：The laser by GaAs base PHEMTs and VCSEL two parts form, and the GaAs base PHEMTs and the VCSEL cutoff layer InGaP that is corroded are separated；The GaAs bases PHEMT is by the first buffer layer GaAs of molecular beam epitaxial growth, 15 cycles successively on gaas substrates Al0.22Ga0.78As/GaAs superlattice layers, raceway groove lower barrierlayer Al0.22Ga0.78As, channel layer In0.2Gao0.8As, space isolation Layer Al0.22Ga0.78As, planar sheet doping layers, barrier layer Al0.22Ga0.78The highly doped cap GaAs of As, N-type is formed；The corrosion Cutoff layer InGaP molecular beam epitaxial growths on the highly doped cap GaAs of the N-type form；The VCSEL in corrosion by cutting Only the 2nd GaAs cushions of molecular beam epitaxial growth, 34.5 couples of λ successively on layer InGaP0The Al of/4 optical thicknesses0.9Ga0.1As/ Al0.2Ga0.8Distribution Bragg reflector layer, Al under AsN types0.2Ga0.8As/GaAs active layers, 3 couples of λ0/ 4 optical thicknesses Al0.9Ga0.1As/Al0.2Ga0.8As p-type distribution Bragg reflectors layer, Al0.98Ga0.02As oxidation limiting layers, 21.5 couples of λ0/4 The Al of optical thickness0.9Ga0.1As/Al0.2Ga0.8Distribution Bragg reflector layer, GaAs cap layers in As p-types.
  2. A kind of 2. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：Described One cushion GaAs is used to provide smooth interface for the growth of subsequent epitaxial layer；The thickness of first buffer layer GaAs is 500nm。
  3. A kind of 3. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：Described ten The Al in five cycles0.22Ga0.78As/GaAs superlattice layers are used to reduce cushion leakage current, wherein, Al0.22Ga0.78The thickness of As Spend for 10nm, the thickness of GaAs is 1.5nm.
  4. A kind of 4. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The ditch Road lower barrierlayer Al0.22Ga0.78As is used to provide a smooth interface for raceway groove growth, while also utilizes Al0.22Ga0.78As/ In0..2Ga0.8As hetero-junctions is strapped in 2DEG in raceway groove；The raceway groove lower barrierlayer Al0.22Ga0.78The thickness of As is 50nm.
  5. A kind of 5. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The sky Between separation layer Al0.22Ga0.78As is used to isolate donor impurity spur and 2DEG spaces, reduces ionization scattering process, ensures The high electron mobility of 2DEG in raceway groove；The space separation layer Al0.22Ga0.78The thickness of As is 4nm.
  6. A kind of 6. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：It is described flat That adulterated in the doped layer of face is Si, dopant dose 3.0x1012cm-2。
  7. A kind of 7. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The N-type That adulterated in highly doped cap GaAs is Si, and doping Si concentration is 5 × 1018cm-3, N+It is device that-GaAs is contacted with grid metal Prepare and good Ohmic contact is provided；The thickness of the highly doped cap GaAs of the N-type is 50nm.
  8. A kind of 8. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The corruption The thickness for losing cutoff layer InGaP is 3nm.
  9. A kind of 9. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The ditch Channel layer In0.2Ga0.8The thickness of As is 12nm, the barrier layer Al0.22Ga0.78The thickness of As is 15nm.
  10. A kind of 10. GaAs base PHEMTs vertical cavity surface emitting laser according to claim 1, it is characterised in that：The N Distribution Bragg reflector layer is by 34.5 couples of λ under type0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8As is formed；
    Distribution Bragg reflector layer is by 34.5 couples of λ under the N-type0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8As structures Into thick 4460nm；
    The active layer Al0.2Ga0.8As/GaAs thickness 250nm；
    The p-type distribution Bragg reflector layer is by 3 couples of λ0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8As is formed, thick 380nm；
    The oxidation limiting layer Al0.98Ga0.02As thickness 40nm；
    Distribution Bragg reflector layer is by 21.5 couples of λ in the p-type0The Al of/4 optical thicknesses0.9Ga0.1As/Al0.2Ga0.8As structures Into thick 2780nm；
    The cap layers GaAs thickness 10nm.
CN201510107058.0A 2015-03-11 2015-03-11 A kind of GaAs base PHEMTs vertical cavity surface emitting laser Expired - Fee Related CN104752953B (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1871751A (en) * 2003-07-25 2006-11-29 康涅狄格大学 Semiconductor laser array device employing modulation doped quantum well structures
CN104221130A (en) * 2012-02-24 2014-12-17 天工方案公司 Improved structures, devices and methods releated to copper interconnects for compound semiconductors

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100359638C (en) * 2001-10-22 2008-01-02 耶鲁大学 Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1871751A (en) * 2003-07-25 2006-11-29 康涅狄格大学 Semiconductor laser array device employing modulation doped quantum well structures
CN104221130A (en) * 2012-02-24 2014-12-17 天工方案公司 Improved structures, devices and methods releated to copper interconnects for compound semiconductors

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