CN104745179A - Alkaline earth nitrosilicate luminescent film and its preparation method and use - Google Patents

Alkaline earth nitrosilicate luminescent film and its preparation method and use Download PDF

Info

Publication number
CN104745179A
CN104745179A CN201310731378.4A CN201310731378A CN104745179A CN 104745179 A CN104745179 A CN 104745179A CN 201310731378 A CN201310731378 A CN 201310731378A CN 104745179 A CN104745179 A CN 104745179A
Authority
CN
China
Prior art keywords
film
alkaline earth
emitting film
preparation
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310731378.4A
Other languages
Chinese (zh)
Inventor
周明杰
陈吉星
王平
张振华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Original Assignee
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oceans King Lighting Science and Technology Co Ltd, Shenzhen Oceans King Lighting Engineering Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Priority to CN201310731378.4A priority Critical patent/CN104745179A/en
Publication of CN104745179A publication Critical patent/CN104745179A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

The invention discloses an alkaline earth nitrosilicate luminescent film and its preparation method and use. The film has a general molecular formula of Me1-xSi2O2N2: xMn<2+>, wherein MeSi2O2N2 is a matrix, Me represents Ca, Sr or Ba, Mn<2+> is an activation element and is used as a main luminescent center in the film, and x is in a range of 0.01-0.08. Through a metal organic chemical vapor deposition method (MOCVD), the alkaline earth nitrosilicate luminescent film (Me1-xSi2O2N2: xMn<2+>) is prepared, has a strong luminescent peak at the wave length of 655nm in a film electroluminescent spectra (EL), and can be used as a latent use material for a film electroluminescent device.

Description

Alkaline earth nitrogen silicate light-emitting film and its preparation method and application
Technical field
The present invention relates to light-emitting film preparation field, particularly relate to a kind of alkaline earth nitrogen silicate light-emitting film and its preparation method and application.
Background technology
Thin-film electroluminescent displays (TFELD), due to its active illuminating, total solids, the advantage such as shock-resistant, reaction is fast, visual angle is large, Applicable temperature is wide, operation is simple, has caused and paid close attention to widely, and development rapidly.At present, research colour and extremely panchromatic TFELD, the material of exploitation multiband luminescence is the developing direction of this problem.
In the research of LED fluorescent powder, the fluorescent material of rear-earth-doped nitrogen silicate substrate, the emmission spectrum that its excitation spectrum can mate existing near ultraviolet LED preferably can obtain good ruddiness exciting to blue light.But, be prepared into electroluminescent film with non-rear-earth-doped nitrogen silicate as luminescent material, have not yet to see report.
Summary of the invention
Problem to be solved by this invention is to provide a kind of alkaline earth nitrogen silicate light-emitting film that can be applied to as emitting layer material in organic electroluminescence device.
Technical scheme of the present invention is as follows:
A kind of alkaline earth nitrogen silicate light-emitting film, its general structure is Me 1-xsi 2o 2n 2: xMn 2+; Wherein, MeSi 2o 2n 2be matrix, Me is Ca, Sr or Ba, Mn 2+be active element, serve as main luminescence center in the film; The value of x is 0.01 ~ 0.08; The value of preferred x is 0.05; Wherein, nitrogen silicate substrate has stable crystalline structure, good electricity and optical property, and as photoelectric material, phonon energy is lower, and optical band gap is wider, can be in luminescence and provides good crystal field; Ca, Sr, Ba are similar alkali earth metals, and the nitrogen silicate performance of composition is similar.
The present invention also provides a kind of preparation method of above-mentioned alkaline earth nitrogen silicate light-emitting film, comprises the steps:
(1), priority toluene, acetone and ethanol respectively ultrasonic cleaning substrate (substrate is the ito glass that Nan Bo company buys) 5 minutes, then clean with distilled water flushing, the air-dry rear feeding vacuum coating film equipment reaction chamber of nitrogen;
(2), to vacuum coating film equipment reaction chamber vacuumize process, make its vacuum tightness be evacuated to 1.0 × 10 -2pa ~ 1.0 × 10 -3after Pa; Heat treating substrates 10 ~ 30 minutes at prior to 700 DEG C, then temperature is reduced to 250 DEG C ~ 650 DEG C (preferably 500 DEG C);
(3) rotating machine of filming equipment is opened, regulate coating process parameter: the rotating speed of substrate bracket is 50 ~ 1000 revs/min, first pass into airshed and be 5 ~ 15sccm and the Ar carrier gas containing organometallic sources, then oxygen and ammonia gas mixture body that general gas flow is 10 ~ 200sccm is passed into, the molar flow of oxygen and ammonia is 1:2, starts the deposition of film; Wherein, described organometallic sources selects mol ratio to be the chemical formula of (1-x): 2:x is respectively (C 5h 5) 2the cyclopentadiene alkaline earth salt of Me, silane and the luxuriant manganese of methyl two (MCp);
(4) thickness of film to be deposited is 80 ~ 300nm(preferred thickness is 150nm) after, close the Ar carrier gas containing organometallic sources, and continue logical oxygen and ammonia gas mixture body, and the temperature of reaction chamber is dropped to 60 ~ 100 DEG C (preferably 80 DEG C), namely obtaining general structure is Me 1-xsi 2o 2n 2: xMn 2+alkaline earth nitrogen silicate light-emitting film; Wherein, MeSi 2o 2n 2be matrix, Me is Ca, Sr or Ba, Mn 2+be active element, serve as main luminescence center in the film; The value of x is 0.01 ~ 0.08; Wherein, the oxygen passed into and ammonia gas mixture are as reaction gas, and mocvd method prepares the prerequisite of nitride oxide film.
In the preparation method of described alkaline earth nitrogen silicate light-emitting film, preferably, vacuumizing process to vacuum coating film equipment reaction chamber adopts mechanical pump and molecular pump to vacuumize; The vacuum tightness of preferred reaction room is 4.0 × 10 -3pa.
In the preparation method of described alkaline earth nitrogen silicate light-emitting film, preferred coating process parameter: the rotating speed of substrate bracket is 300 revs/min, the airshed of Ar carrier gas is 10sccm, and molar flow is the oxygen of 1:2 and the airshed of ammonia is 120sccm.
The present invention provides again a kind of above-mentioned alkaline earth nitrogen silicate light-emitting film as the application of organic electroluminescence device luminescent layer film.
The present invention utilizes Metalorganic Chemical Vapor Deposition (MOCVD), prepares alkaline earth nitrogen silicate light-emitting film (Me 1-xsi 2o 2n 2: xMn 2+), obtain in the electroluminescence spectrum (EL) of film, have very strong glow peak in 655nm position, relative luminous intensity is about 2580, can be used as the potential application material of membrane electro luminescent device.
Accompanying drawing explanation
Fig. 1 is the EL spectrogram of the alkaline earth nitrogen silicate light-emitting film that embodiment 8 obtains;
Fig. 2 is the structural representation of the organic electroluminescence device that embodiment 12 obtains.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described
Embodiment 1: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.4.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 20 minutes, then temperature reduces to 500 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 300 revs/min, passes into three kinds of organic source bis-cyclopentadiene magnesium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Mg, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.95:2:0.05, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 120sccm, starts the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 80 DEG C, takes out sample light-emitting film Mg 0.95si 2o 2n 2: 0.05Mn 2+.
Embodiment 2: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 10 minutes, then temperature reduces to 250 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 50 revs/min, passes into three kinds of organic source bis-cyclopentadiene magnesium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Mg, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.99:2:0.01, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 10sccm, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 60 DEG C, takes out sample light-emitting film Mg 0.99si 2o 2n 2: 0.01Mn 2+.
Embodiment 3: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -2pa; Then substrate is carried out 700 DEG C of thermal treatments 30 minutes, then temperature reduces to 650 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 1000 revs/min, passes into three kinds of organic source bis-cyclopentadiene magnesium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Mg, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.92:2:0.08, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 200sccm, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 100 DEG C, takes out sample light-emitting film Mg 0.92si 2o 2n 2: 0.08Mn 2+.
Embodiment 4: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.4.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 20 minutes, then temperature reduces to 500 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 300 revs/min, passes into three kinds of organic source cyclopentadiene calcium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Ca, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.95:2:0.05, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 120sccm, starts the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to less than 100 DEG C, takes out sample light-emitting film Ca 0.95si 2o 2n 2: 0.05Mn 2+.
Embodiment 5: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 10 minutes, then temperature reduces to 250 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 50 revs/min, passes into three kinds of organic source cyclopentadiene calcium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Ca, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.99:2:0.01, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 10sccm, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 100 DEG C, takes out sample light-emitting film Ca 0.99si 2o 2n 2: 0.01Mn 2+.
Embodiment 6: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -2pa; Then substrate is carried out 700 DEG C of thermal treatments 30 minutes, then temperature reduces to 650 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 1000 revs/min, passes into three kinds of organic source cyclopentadiene calcium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Ca, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.92:2:0.08, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 200sccm, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 80 DEG C, takes out sample light-emitting film Ca 0.92si 2o 2n 2: 0.08Mn 2+.
Embodiment 7: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.4.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 20 minutes, then temperature reduces to 500 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 300 revs/min, passes into three kinds of organic source cyclopentadiene strontium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Sr, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.95:2:0.05, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 120sccm, starts the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 100 DEG C, takes out sample light-emitting film Sr 0.95si 2o 2n 2: 0.05Mn 2+.
Embodiment 8: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 10 minutes, then temperature reduces to 250 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 50 revs/min, passes into three kinds of organic source cyclopentadiene strontium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Sr, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.99:2:0.01, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 10sccm, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 80 DEG C, takes out sample light-emitting film Sr 0.99si 2o 2n 2: 0.01Mn 2+.
Fig. 1 is the EL spectrogram of the alkaline earth nitrogen silicate light-emitting film that embodiment 8 obtains; As shown in Figure 1, in the electroluminescence spectrum (EL) of the alkaline earth nitrogen silicate light-emitting film that the present embodiment obtains, have very strong glow peak in 655nm position, relative luminous intensity is about 2580.
Embodiment 9: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -2pa; Then substrate is carried out 700 DEG C of thermal treatments 30 minutes, then temperature reduces to 650 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 1000 revs/min, passes into three kinds of organic source cyclopentadiene strontium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Sr, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.92:2:0.08, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 200sccm, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 60 DEG C, takes out sample light-emitting film Sr 0.92si 2o 2n 2: 0.08Mn 2+.
Embodiment 10: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.4.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 20 minutes, then temperature reduces to 500 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 300 revs/min, passes into three kinds of organic source cyclopentadiene barium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Ba, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.95:2:0.05, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 120sccm, starts the deposition of film.The thickness of film is deposited into 150nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 60 DEG C, takes out sample light-emitting film Ba 0.95si 2o 2n 2: 0.05Mn 2+.
Embodiment 11: substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -3pa; Then substrate is carried out 700 DEG C of thermal treatments 10 minutes, then temperature reduces to 250 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 50 revs/min, passes into three kinds of organic source cyclopentadiene barium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Ba, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.99:2:0.01, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 10sccm, starts the deposition of film.The thickness of film is deposited into 80nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 80 DEG C, takes out sample light-emitting film Ba 0.99si 2o 2n 2: 0.01Mn 2+.
Embodiment 12: the present embodiment is organic electroluminescence device, as shown in Figure 2, its structure comprises glass substrate 1, ITO transparent conductive film 2 as anode, light-emitting film layer 3, Ag layer 4 as negative electrode; Wherein, light-emitting film layer 3 is alkaline earth nitrogen silicate light-emitting film.
The preparation process of this organic electroluminescence device is as follows:
Substrate is the ito glass bought from Nan Bo company, successively cleans 5 minutes with toluene, acetone and EtOH Sonicate, then clean with distilled water flushing, the air-dry rear feeding equipment reaction chamber of nitrogen.1.0 × 10 are evacuated to by the vacuum tightness of mechanical pump and molecular pump cavity -2pa; Then substrate is carried out 700 DEG C of thermal treatments 30 minutes, then temperature reduces to 650 DEG C.Open rotating machine, the rotating speed regulating substrate bracket is 1000 revs/min, passes into three kinds of organic source cyclopentadiene barium (C 5h 5) 2the carrier gas Ar gas of the luxuriant manganese of Ba, silane and methyl two (MCp), flow is 10sccm.Wherein, the molar flow of three provenances, than being 0.92:2:0.08, then passes into reaction gas oxygen and ammonia, and its molar flow is than being 1:2, and flow is 200sccm, starts the deposition of film.The thickness of film is deposited into 300nm, closes organic source and carrier gas, and continue logical oxygen and ammonia gas mixture body, temperature drops to 100 DEG C, takes out sample light-emitting film Ba 0.92si 2o 2n 2: 0.08Mn 2+.Finally evaporation one deck Ag on light-emitting film, as negative electrode.Obtained organic electroluminescence device.
Should be understood that, the above-mentioned statement for present pre-ferred embodiments is comparatively detailed, and therefore can not think the restriction to scope of patent protection of the present invention, scope of patent protection of the present invention should be as the criterion with claims.

Claims (8)

1. an alkaline earth nitrogen silicate light-emitting film, is characterized in that, its general structure is Me 1-xsi 2o 2n 2: xMn 2+; Wherein, MeSi 2o 2n 2be matrix, Me is Ca, Sr or Ba, Mn 2+be active element, serve as main luminescence center in the film; The value of x is 0.01 ~ 0.08.
2. alkaline earth nitrogen silicate light-emitting film according to claim 1, is characterized in that, the value of x is 0.05.
3. a preparation method for alkaline earth nitrogen silicate light-emitting film according to claim 1, is characterized in that, comprise the steps:
(1) toluene, acetone and ethanol difference ultrasonic cleaning substrate 5 minutes, are successively used, then clean with distilled water flushing, the air-dry rear feeding vacuum coating film equipment reaction chamber of nitrogen;
(2), to vacuum coating film equipment reaction chamber vacuumize process, make its vacuum tightness be evacuated to 1.0 × 10 -2pa ~ 1.0 × 10 -3after Pa; Heat treating substrates 10 ~ 30 minutes at prior to 700 DEG C, then temperature reduces to 250 DEG C ~ 650 DEG C;
(3) rotating machine of filming equipment is opened, regulate coating process parameter: the rotating speed of substrate bracket is 50 ~ 1000 revs/min, first pass into airshed and be 5 ~ 15sccm and the Ar carrier gas containing organometallic sources, then oxygen and ammonia gas mixture body that general gas flow is 10 ~ 200sccm is passed into, the molar flow of oxygen and ammonia is 1:2, starts the deposition of film; Wherein, described organometallic sources selects mol ratio to be the chemical formula of (1-x): 2:x is respectively (C 5h 5) 2the cyclopentadiene alkaline earth salt of Me, silane and the luxuriant manganese of methyl two;
(4) thickness of film to be deposited is after 80 ~ 300nm, closes the Ar carrier gas containing organometallic sources, and continues logical oxygen and ammonia gas mixture body, and the temperature of reaction chamber is dropped to 60 ~ 100 DEG C, and namely obtaining general structure is Me 1-xsi 2o 2n 2: xMn 2+alkaline earth nitrogen silicate light-emitting film; Wherein, MeSi 2o 2n 2be matrix, Me is Ca, Sr or Ba, Mn 2+be active element, serve as main luminescence center in the film; The value of x is 0.01 ~ 0.08.
4. the preparation method of alkaline earth nitrogen silicate light-emitting film according to claim 3, is characterized in that, vacuumizes process adopt mechanical pump and molecular pump to vacuumize to vacuum coating film equipment reaction chamber.
5. the preparation method of the alkaline earth nitrogen silicate light-emitting film according to claim 3 or 4, is characterized in that, the vacuum tightness of reaction chamber is 4.0 × 10 -3pa.
6. the preparation method of alkaline earth nitrogen silicate light-emitting film according to claim 3, it is characterized in that, coating process parameter: the rotating speed of substrate bracket is 300 revs/min, the airshed of Ar carrier gas is 10sccm, and molar flow is the oxygen of 1:2 and the airshed of ammonia is 120sccm.
7. the preparation method of alkaline earth nitrogen silicate light-emitting film according to claim 3, is characterized in that, Me 1-xsi 2o 2n 2: xMn 2+in the value of x be 0.05.
8. one kind as claimed in claim 1 or 2 alkaline earth nitrogen silicate light-emitting film as the application of organic electroluminescence device luminescent layer film.
CN201310731378.4A 2013-12-26 2013-12-26 Alkaline earth nitrosilicate luminescent film and its preparation method and use Pending CN104745179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310731378.4A CN104745179A (en) 2013-12-26 2013-12-26 Alkaline earth nitrosilicate luminescent film and its preparation method and use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310731378.4A CN104745179A (en) 2013-12-26 2013-12-26 Alkaline earth nitrosilicate luminescent film and its preparation method and use

Publications (1)

Publication Number Publication Date
CN104745179A true CN104745179A (en) 2015-07-01

Family

ID=53585450

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310731378.4A Pending CN104745179A (en) 2013-12-26 2013-12-26 Alkaline earth nitrosilicate luminescent film and its preparation method and use

Country Status (1)

Country Link
CN (1) CN104745179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106147757A (en) * 2016-06-13 2016-11-23 郑甘裕 A kind of alkaline earth nitrogen silicate luminescent material, preparation method and applications

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106147757A (en) * 2016-06-13 2016-11-23 郑甘裕 A kind of alkaline earth nitrogen silicate luminescent material, preparation method and applications

Similar Documents

Publication Publication Date Title
CN104752629A (en) Niobium zincate luminescent film, and preparation method and application thereof
CN106118650A (en) HONGGUANG niobium zincate luminescent material, preparation method and applications
CN104745179A (en) Alkaline earth nitrosilicate luminescent film and its preparation method and use
CN104745180A (en) Manganese-doped gallate luminescent film and its preparation method and use
CN104745178A (en) Cerium-doped alkaline earth sulfide luminescent film, and preparation method and application thereof
CN103805186A (en) Copper-iridium co-doped vanadate light-emitting film, and preparation method and application thereof
CN104745186A (en) Europium doped gadolinium oxide light emitting film, preparation method and applications thereof
CN104752628A (en) Europium-doped aluminum arsenate luminescent film and preparation method and application thereof
CN104119894A (en) Titanium-doped alkaline earth borophosphate luminescent thin film and preparation method and application thereof
CN103421493B (en) Europium doping sulfo copper aluminate luminescent thin film, preparation method and application thereof
CN103805188A (en) Cerium and terbium codoped borophosphate light-emitting film as well as preparation method and application of cerium and terbium codoped borophosphate light-emitting film
CN103421499B (en) Additive Mn arsenate light-emitting film, preparation method and application thereof
CN106433620A (en) Alkaline-earth sulfide luminescent material, preparation method and application of material
CN103805185A (en) Praseodymium-doped molybdate light emitting film and preparation method and application thereof
CN103289687B (en) Cerium dopping sulphoaluminate light-emitting film, preparation method and application thereof
CN104277834A (en) Bis-alkaline-earth phosphate light-emitting film as well as preparation and application thereof
CN104673292A (en) Indium zirconate luminescence film, electroluminescent device and preparation method of indium zirconate luminescence film and electroluminescent device
CN103289688B (en) titanium doped aluminate luminescent film, preparation method and application thereof
CN104178142A (en) Manganese-doped alkaline-earth nitrogen-aluminium-silicon-salt luminescent film, preparation method and application thereof
CN103289690B (en) Praseodymium doped titanate luminescent film, preparation method and application thereof
CN103571476A (en) Cerium-doped Group-III molybdate light-emitting film, preparation method and application thereof
CN104342137A (en) Ce-doped trivalent vanadium silicate light-emitting film as well as preparation method and application thereof
CN106147757A (en) A kind of alkaline earth nitrogen silicate luminescent material, preparation method and applications
CN106118654A (en) A kind of europium adulterated al arsenate luminescent material, preparation method and applications
CN104342157A (en) Alkali metal and titanium ion co-doped strontium selenide luminescent thin film, and preparation method and application thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150701

WD01 Invention patent application deemed withdrawn after publication