CN104743529B - Synthesis method of tungsten nitride with high catalytic performance - Google Patents
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- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 34
- 239000010937 tungsten Substances 0.000 title claims abstract description 34
- -1 tungsten nitride Chemical class 0.000 title claims abstract description 27
- 230000003197 catalytic effect Effects 0.000 title claims abstract description 9
- 238000001308 synthesis method Methods 0.000 title 1
- 239000000843 powder Substances 0.000 claims abstract description 25
- 239000002243 precursor Substances 0.000 claims abstract description 24
- 238000002360 preparation method Methods 0.000 claims abstract description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 13
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 11
- 238000005121 nitriding Methods 0.000 claims description 11
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- 239000012752 auxiliary agent Substances 0.000 claims description 5
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 239000004202 carbamide Substances 0.000 claims description 3
- 239000004471 Glycine Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000006479 redox reaction Methods 0.000 claims description 2
- 238000010189 synthetic method Methods 0.000 claims 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims 1
- 239000001630 malic acid Substances 0.000 claims 1
- 235000011090 malic acid Nutrition 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 12
- 229910001930 tungsten oxide Inorganic materials 0.000 abstract description 10
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 abstract description 9
- 238000004663 powder metallurgy Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- VYTBPJNGNGMRFH-UHFFFAOYSA-N acetic acid;azane Chemical compound N.N.CC(O)=O.CC(O)=O.CC(O)=O.CC(O)=O VYTBPJNGNGMRFH-UHFFFAOYSA-N 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007327 hydrogenolysis reaction Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
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Abstract
本发明公开了一种制备纳米氮化钨的方法,属于粉末冶金制备技术领域。首先采用溶液法合成制备氧化钨前驱体,接着将氧化钨前驱物在氨气中进行氮化得到晶粒为纳米级的氮化钨粉末,粉末粒度为30~120nm。该发明解决了传统制备方法难以得到超细纳米晶粉末以及制备时间长的问题,得到的氮化钨粉末粒径可控、低成本、原料粉末利用率高、具有显著的催化性能等优点。
The invention discloses a method for preparing nanometer tungsten nitride, belonging to the technical field of powder metallurgy preparation. Firstly, the tungsten oxide precursor is synthesized and prepared by solution method, and then the tungsten oxide precursor is nitrided in ammonia gas to obtain tungsten nitride powder with nanoscale crystal grains, and the powder particle size is 30-120nm. The invention solves the problems that the traditional preparation method is difficult to obtain ultrafine nanocrystalline powder and the preparation time is long, and the obtained tungsten nitride powder has the advantages of controllable particle size, low cost, high utilization rate of raw material powder, and remarkable catalytic performance.
Description
技术领域technical field
本发明属于粉末冶金制备技术领域,特别提供了一种纳米晶氮化钨粉末的制备方法。The invention belongs to the technical field of powder metallurgy preparation, and particularly provides a preparation method of nanocrystalline tungsten nitride powder.
背景技术Background technique
难熔金属钨不仅在作为单质时有着出色的表现,它的化合物氧化钨、硫化钨、氮化钨也均有着十分广泛的应用。其中氮化钨是一种新型催化材料,在加氢脱硫、加氢脱氮中有着比硫化物催化剂更加优越的性能,不仅可以避免因工业催化剂预硫化而带来的硫污染,还对杂原子环的氢解有很高的选择性,可大大降低过程中的氢耗,具有较大的工业意义。这些过程传统上使用贵金属作为催化剂。因此,使用氮化物代替贵金属的愿望推动人们研究此类催化剂的合成和催化作用。The refractory metal tungsten not only has excellent performance as a single substance, but also its compounds tungsten oxide, tungsten sulfide, and tungsten nitride are also widely used. Among them, tungsten nitride is a new type of catalytic material, which has better performance than sulfide catalysts in hydrodesulfurization and hydrodenitrogenation. The hydrogenolysis of the ring has high selectivity, which can greatly reduce the hydrogen consumption in the process, and has great industrial significance. These processes traditionally use noble metals as catalysts. Thus, the desire to use nitrides instead of noble metals has driven research into the synthesis and catalysis of such catalysts.
同时,目前的研究表明,当材料达到纳米尺寸的时候,其光学、热学、电学、磁学、力学乃至化学性质也就相应地发生十分显著的变化,具有一般材料所没有的优越性能。同样,氮化钨晶粒尺寸达到纳米级别的时候,其催化性能也有很大提高。另一方面由于紫钨在钨的氧化物中具有最高的氧空位缺陷,表面活性高,所以目前广泛应用于制备超细钨粉,硬质合金WC等。因此制备纳米晶的氮化钨可通过优先制备紫钨,再经过后续氮化得到。At the same time, the current research shows that when the material reaches the nanometer size, its optical, thermal, electrical, magnetic, mechanical and even chemical properties will change significantly accordingly, and it has superior performance that ordinary materials do not have. Similarly, when the grain size of tungsten nitride reaches the nanometer level, its catalytic performance is also greatly improved. On the other hand, because violet tungsten has the highest oxygen vacancy defect in tungsten oxide and has high surface activity, it is currently widely used in the preparation of ultrafine tungsten powder, cemented carbide WC, etc. Therefore, the preparation of nanocrystalline tungsten nitride can be obtained by preferentially preparing violet tungsten and then subsequent nitriding.
目前,纳米级氮化钨的制备方法主要是由溶胶凝胶法、喷雾热解法、回转炉煅烧法等制备氧化钨前驱体,然后再通入氨气中氮化。刘兵发(南昌大学学报:工科版,2006,28(3):235-238.)以偏钨酸铵为原料,采用喷雾造粒然后煅烧的方法,制备平均粒径为0.64μmWO3前驱体粉末,再筛选出100nm左右的颗粒在纯氨条件下氮化。该方法虽然能制备小于100nm的氮化钨粉末,但是制粉率很低。Chen(Journal of Solid State Chemistry,2011,184(2):455-462.)将钨酸与辛胺混合搅拌24h,再经过48小时反应后通入氨气,在650~800℃条件下煅烧制备WN。该方法制备出的WN为短棒状,晶粒细小,但是制备时间太长,且制备成本较高。因此,需要开发新一种具有高催化性能氮化钨的制备方法。At present, the preparation method of nanoscale tungsten nitride is mainly to prepare tungsten oxide precursor by sol-gel method, spray pyrolysis method, rotary kiln calcination method, etc., and then pass it into ammonia gas for nitriding. Liu Bingfa (Journal of Nanchang University: Engineering Edition, 2006,28(3):235-238.) used ammonium metatungstate as raw material, and prepared WO 3 precursor with an average particle size of 0.64μm by spraying granulation and then calcining. Powder, and then screen out the particles of about 100nm to be nitrided under the condition of pure ammonia. Although the method can prepare tungsten nitride powder smaller than 100nm, the powder making rate is very low. Chen (Journal of Solid State Chemistry, 2011, 184(2):455-462.) mixed tungstic acid and octylamine for 24 hours, then fed ammonia gas after 48 hours of reaction, and calcined at 650-800°C to prepare WN. The WN prepared by this method is in the shape of short rods and fine grains, but the preparation time is too long and the preparation cost is relatively high. Therefore, it is necessary to develop a new preparation method for tungsten nitride with high catalytic performance.
发明内容Contents of the invention
本发明的目的在于提供一种制备纳米氮化钨的新方法,解决制备时间太长,且制备成本较高的问题。The purpose of the present invention is to provide a new method for preparing nano-tungsten nitride, which solves the problems of too long preparation time and high preparation cost.
本发明直接采用钨酸盐偏钨酸铵为原料,具有短流程、低成本的特点,并且制备出的氮化钨的粒径大小可控,催化性能优异。The invention directly uses tungstate ammonium metatungstate as a raw material, has the characteristics of short process and low cost, and the prepared tungsten nitride has controllable particle size and excellent catalytic performance.
本发明的工艺步骤如下:Processing step of the present invention is as follows:
1、原料:所采用的原料有偏钨酸铵、硝酸铵、辅助剂和乙二胺四乙酸;1. Raw materials: The raw materials used are ammonium metatungstate, ammonium nitrate, auxiliary agent and ethylenediaminetetraacetic acid;
2、溶液配制:将所选择原料按照一定的配比溶于水,混合均匀;2. Solution preparation: dissolve the selected raw materials in water according to a certain ratio, and mix them evenly;
3、前驱体制备:将步骤(2)得到的水溶液加热,随着水溶液的挥发,溶液在发生浓缩后鼓泡,放出大量的气体,在几十秒钟内发生剧烈氧化还原反应,生成前驱体粉末。3. Precursor preparation: Heat the aqueous solution obtained in step (2). With the volatilization of the aqueous solution, the solution will bubble after concentration and release a large amount of gas, and a violent redox reaction will occur within tens of seconds to form a precursor powder.
4、氮化钨的制备:将步骤(3)得到的前驱物在650℃~900℃温度下,氨气气氛中煅烧,时间为1~2小时,得到纯净、孔隙率和粒径可控的纳米氮化钨粉末。4. Preparation of tungsten nitride: calcining the precursor obtained in step (3) at a temperature of 650°C to 900°C in an ammonia atmosphere for 1 to 2 hours to obtain pure, porosity and particle size controlled Nano tungsten nitride powder.
其中步骤(2)中硝酸铵与钨源的摩尔比为12~36;辅助剂与钨源的摩尔比为5~15;乙二胺四乙酸与钨源摩尔比为0.5~1。Wherein in step (2), the molar ratio of ammonium nitrate to tungsten source is 12-36; the molar ratio of auxiliary agent to tungsten source is 5-15; the molar ratio of EDTA to tungsten source is 0.5-1.
本发明的优点是:The advantages of the present invention are:
1、直接采用钨酸盐偏钨酸铵为原料,短流程、低成本,工艺简便、快捷,适合规模化生产;1. Directly use tungstate ammonium metatungstate as raw material, short process, low cost, simple and fast process, suitable for large-scale production;
2、可以通过控制原料的种类及配比,控制前驱体制备的反应过程,控制前驱体的粒径、孔隙结构;2. By controlling the type and proportion of raw materials, the reaction process of precursor preparation can be controlled, and the particle size and pore structure of the precursor can be controlled;
3、本发明反应过程中产生大量气体,有效的控制了反应过程中反应物与氧气的接触,对生成前驱体紫钨粉末有着重要作用;3. A large amount of gas is generated during the reaction process of the present invention, which effectively controls the contact between the reactant and oxygen during the reaction process, and plays an important role in the formation of the precursor violet tungsten powder;
4、前驱体粉末反应活性高,可降低热处理温度,并提高热处理速度;4. The precursor powder has high reactivity, which can reduce the heat treatment temperature and increase the heat treatment speed;
5、可以通过氨气的氮化温度,控制所得到氮化钨的粒度、孔隙结构。从而达到提高催化性能的目的。5. The particle size and pore structure of the obtained tungsten nitride can be controlled by the nitriding temperature of ammonia gas. So as to achieve the purpose of improving the catalytic performance.
附图说明Description of drawings
图1为氮化钨粉末的XRD图谱;Fig. 1 is the XRD pattern of tungsten nitride powder;
图2为氮化钨粉末扫描电镜观察照片(其中a为x2,000,b为x9,000倍)。Fig. 2 is a scanning electron microscope observation photo of tungsten nitride powder (where a is x2,000, b is x9,000 times).
具体实施方式detailed description
实施例1Example 1
按照反应计量比称取偏钨酸铵((NH4)6H2W12O40)0.01mol,硝酸铵(NH4NO3)0.24mol,尿素(CO(NH2)2)0.072mol,乙二胺四乙酸(EDTA)0.005mol。将原料粉末溶于适量的去离子水中搅拌至完全溶解后,恒温200℃加热,溶液蒸干后发生反应得到前驱物氧化钨粉末。将前驱物在氨气中650℃氮化,保温2小时得到直径为30~80nm的氮化钨。Weigh 0.01 mol of ammonium metatungstate ((NH 4 ) 6 H 2 W 12 O 40 ), 0.24 mol of ammonium nitrate (NH 4 NO 3 ), 0.072 mol of urea (CO(NH 2 ) 2 ), and Diaminetetraacetic acid (EDTA) 0.005mol. Dissolve the raw material powder in an appropriate amount of deionized water and stir until completely dissolved, then heat at a constant temperature of 200°C, and react after the solution is evaporated to dryness to obtain the precursor tungsten oxide powder. Nitriding the precursor at 650°C in ammonia gas and keeping it warm for 2 hours to obtain tungsten nitride with a diameter of 30-80nm.
实施例2Example 2
按照反应计量比称取偏钨酸铵((NH4)6H2W12O40)0.01mol,硝酸铵(NH4NO3)0.24mol,尿素(CO(NH2)2)0.072mol,乙二胺四乙酸(EDTA)0.005mol。将原料粉末溶于适量的去离子水中搅拌至完全溶解后,恒温200℃加热,溶液蒸干后发生反应得到前驱物氧化钨粉末。将前驱物在氨气中750℃氮化,保温2小时得到直径为30~100nm的氮化钨。Weigh 0.01 mol of ammonium metatungstate ((NH 4 ) 6 H 2 W 12 O 40 ), 0.24 mol of ammonium nitrate (NH 4 NO 3 ), 0.072 mol of urea (CO(NH 2 ) 2 ), and Diaminetetraacetic acid (EDTA) 0.005mol. Dissolve the raw material powder in an appropriate amount of deionized water and stir until completely dissolved, then heat at a constant temperature of 200°C, and react after the solution is evaporated to dryness to obtain the precursor tungsten oxide powder. Nitriding the precursor at 750°C in ammonia gas and keeping it warm for 2 hours to obtain tungsten nitride with a diameter of 30-100nm.
实施例3Example 3
按照反应计量比称取偏钨酸铵((NH4)6H2W12O40)0.01mol,硝酸铵(NH4NO3)0.3mol,柠檬酸(C6H8O7)0.072mol,乙二胺四乙酸(EDTA)0.005mol。将原料粉末溶于适量的去离子水中搅拌至完全溶解后,恒温200℃加热,溶液蒸干后发生反应得到前驱物氧化钨泡沫。将前驱物在氨气中900℃氮化,保温1小时得到直径为50~100nm的氮化钨。Weigh ammonium metatungstate ((NH 4 ) 6 H 2 W 12 O 40 ) 0.01mol, ammonium nitrate (NH 4 NO 3 ) 0.3mol, citric acid (C 6 H 8 O 7 ) 0.072mol according to the reaction measurement ratio, Ethylenediaminetetraacetic acid (EDTA) 0.005mol. Dissolve the raw material powder in an appropriate amount of deionized water and stir until completely dissolved, then heat at a constant temperature of 200°C, and react after the solution is evaporated to dryness to obtain the precursor tungsten oxide foam. Nitriding the precursor at 900°C in ammonia gas and keeping it warm for 1 hour to obtain tungsten nitride with a diameter of 50-100nm.
实施例4Example 4
按照反应计量比称取偏钨酸铵((NH4)6H2W12O40)0.01mol,硝酸铵(NH4NO3)0.24mol,柠檬酸(C6H8O7)0.1mol,乙二胺四乙酸(EDTA)0.005mol。将原料粉末溶于适量的去离子水中搅拌至完全溶解后,恒温200℃加热,溶液蒸干后发生反应得到前驱物氧化钨粉末。将前驱物在氨气中650℃氮化,保温2小时得到直径为50~80nm的氮化钨。Weigh 0.01 mol of ammonium metatungstate ((NH 4 ) 6 H 2 W 12 O 40 ), 0.24 mol of ammonium nitrate (NH 4 NO 3 ), 0.1 mol of citric acid (C 6 H 8 O 7 ) according to the reaction measurement ratio, Ethylenediaminetetraacetic acid (EDTA) 0.005mol. Dissolve the raw material powder in an appropriate amount of deionized water and stir until completely dissolved, then heat at a constant temperature of 200°C, and react after the solution is evaporated to dryness to obtain the precursor tungsten oxide powder. Nitriding the precursor at 650°C in ammonia gas and keeping it warm for 2 hours to obtain tungsten nitride with a diameter of 50-80nm.
实施例5Example 5
按照反应计量比称取偏钨酸铵((NH4)6H2W12O40)0.01mol,硝酸铵(NH4NO3)0.24mol,甘氨酸(C2H5NO2)0.072mol,乙二胺四乙酸(EDTA)0.005mol。将原料粉末溶于适量的去离子水中搅拌至完全溶解后,恒温200℃加热,溶液蒸干后发生反应得到前驱物氧化钨粉末。将前驱物在氨气中750℃氮化,保温2小时得到直径为50~100nm的氮化钨。Weigh 0.01 mol of ammonium metatungstate ((NH 4 ) 6 H 2 W 12 O 40 ), 0.24 mol of ammonium nitrate (NH 4 NO 3 ), 0.072 mol of glycine (C 2 H 5 NO 2 ), and Diaminetetraacetic acid (EDTA) 0.005mol. Dissolve the raw material powder in an appropriate amount of deionized water and stir until completely dissolved, then heat at a constant temperature of 200°C, and react after the solution is evaporated to dryness to obtain the precursor tungsten oxide powder. Nitriding the precursor at 750°C in ammonia gas and keeping it warm for 2 hours to obtain tungsten nitride with a diameter of 50-100nm.
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