CN104732913A - Screen body structure of AMOLED and voltage conversion circuit of screen body structure - Google Patents
Screen body structure of AMOLED and voltage conversion circuit of screen body structure Download PDFInfo
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- CN104732913A CN104732913A CN201310705863.4A CN201310705863A CN104732913A CN 104732913 A CN104732913 A CN 104732913A CN 201310705863 A CN201310705863 A CN 201310705863A CN 104732913 A CN104732913 A CN 104732913A
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Abstract
The invention discloses a voltage conversion circuit of a screen body structure of an AMOLED. The voltage conversion circuit is used for providing testing voltages for an array substrate and comprises a negative voltage module used for converting an input first positive voltage into a first negative voltage to be output, a voltage splitting module which is connected with the output end, outputting the first negative voltage, of the negative voltage module and used for splitting the first negative voltage to obtain one or more negative voltages to be output, wherein the first positive voltage and the negative voltages are used as testing voltages. The invention further discloses the screen body structure, comprising the voltage conversion circuit, of the AMOLED. When the screen body structure is tested, two or more testing voltages can be obtained by providing only one first positive voltage through an external testing device, and the area occupied by testing element sets is greatly narrowed. On the other hand, the external testing device does not need to provide various different voltages, the complexity of the external testing device is lowered, and the testing cost is reduced.
Description
Technical field
The present invention relates to active matrix organic light-emitting display technique field, particularly relate to screen body structure and the voltage conversion circuit thereof of a kind of AMOLED.
Background technology
Active matrix organic light-emitting display (AMOLED) is a kind of autonomous luminescent device, compares present main flow flat panel display Thin Film Transistor-LCD (TFT-LCD) and has the advantages such as high-contrast, wide viewing angle, low-power consumption, volume are thinner.
AMOLED is primarily of thin film transistor (TFT) (TFT) array base palte and organic layer composition, in traditional production run, the display screen body having completed making needed to light test to whole display screen body before fixed with driving chip nation, need to input many voltage signals by test pin to display screen body, these signals comprise high level signal VGH, low level signal VGL and reference signal VREF for this reason.
Traditional way is: input each positive and negative voltage signal by special testing apparatus to each test pin, but need like this to manufacture many special test pin at display screen edge, make this just very crowded display screen body edge more crowded, also make display screen body frame narrow and become more difficult.
On the other hand, special testing apparatus needs to input multiple voltage signal, is difficult to the cost avoiding improving testing apparatus.
Summary of the invention
Based on this, be necessary to provide a kind of and reduce test pin area occupied and reduce the voltage conversion circuit of testing cost.
In addition, a kind of screen body structure comprising the AMOLED of this voltage conversion circuit is also provided.
A voltage conversion circuit for the screen body structure of AMOLED, for providing test voltage for described array base palte, comprising:
Negative pressure module, exports for the first positive voltage of input is converted to the first negative voltage;
Division module, connects the output terminal that described negative pressure module exports the first negative voltage, obtains the output of more than one negative voltage for described first negative voltage being carried out dividing potential drop;
Described first positive voltage and more than one negative voltage are all as test voltage.
Wherein in an embodiment, described negative pressure module comprises the first film transistor, the second thin film transistor (TFT), the first resistance, the first electric capacity, the second electric capacity, the first diode, the second diode and stabilivolt;
The source electrode of described the first film transistor for inputting described first positive voltage, drain electrode is connected with the source electrode of the second thin film transistor (TFT), grid is for inputting the first square-wave signal; The grounded drain of described second thin film transistor (TFT), grid are for inputting the second square-wave signal; The waveform of described first square-wave signal and the second square-wave signal is contrary;
The drain electrode of described the first film transistor connects the first resistance, the first electric capacity, the first diode successively to the output terminal of described negative pressure module; The anode of wherein said first diode connects the first electric capacity;
Described second diode is connected between the negative electrode of the first diode and the drain electrode of the second thin film transistor (TFT), and the negative electrode of described second diode is connected with the drain electrode of described second thin film transistor (TFT);
Described second electric capacity and stabilivolt parallel connection, and be connected between the anode of the first diode and the drain electrode of the second thin film transistor (TFT), the negative electrode of wherein said stabilivolt is connected with the drain electrode of described second thin film transistor (TFT).
Wherein in an embodiment, described the first film transistor and the second thin film transistor (TFT) are P type.
Wherein in an embodiment, described division module comprises at least two divider resistances of series connection.
Wherein in an embodiment, described first positive voltage is sweep trace cut-in voltage, and described more than one negative voltage comprises sweep trace and closes voltage and reference voltage.
A screen body structure of AMOLED, comprising:
Substrate;
Screen body, be located on described substrate, described screen body comprises thin film transistor (TFT) pixel drive unit;
Gate driver circuit, is located at the marginal position on described substrate, provides to described screen body the drive singal comprising driving voltage;
Testing element group, is located at the marginal position on described substrate, is connected with described gate driver circuit, provides test voltage to described gate driver circuit;
Wherein, be also provided with voltage conversion circuit in described gate driver circuit or testing element group, described voltage conversion circuit comprises:
Negative pressure module, exports for the first positive voltage of input is converted to the first negative voltage;
Division module, connects the output terminal that described negative pressure module exports the first negative voltage, obtains the output of more than one negative voltage for described first negative voltage being carried out dividing potential drop;
Described first positive voltage and more than one negative voltage are all as test voltage.
Wherein in an embodiment, described negative pressure module comprises the first film transistor, the second thin film transistor (TFT), the first resistance, the first electric capacity, the second electric capacity, the first diode, the second diode and stabilivolt;
The source electrode of described the first film transistor for inputting described first positive voltage, drain electrode is connected with the source electrode of the second thin film transistor (TFT), grid is for inputting the first square-wave signal; The grounded drain of described second thin film transistor (TFT), grid are for inputting the second square-wave signal; The waveform of described first square-wave signal and the second square-wave signal is contrary;
The drain electrode of described the first film transistor connects the first resistance, the first electric capacity, the first diode successively to the output terminal of described negative pressure module; The anode of wherein said first diode connects the first electric capacity;
Described second diode is connected between the negative electrode of the first diode and the drain electrode of the second thin film transistor (TFT), and the negative electrode of described second diode is connected with the drain electrode of described second thin film transistor (TFT);
Described second electric capacity and stabilivolt parallel connection, and be connected between the anode of the first diode and the drain electrode of the second thin film transistor (TFT), the negative electrode of wherein said stabilivolt is connected with the drain electrode of described second thin film transistor (TFT).
Wherein in an embodiment, described the first film transistor and the second thin film transistor (TFT) are P type.
Wherein in an embodiment, described division module comprises at least two divider resistances of series connection.
Wherein in an embodiment, described first positive voltage is sweep trace cut-in voltage, and described more than one negative voltage comprises sweep trace and closes voltage and reference voltage.
The screen body structure of above-mentioned AMOLED, when testing it, outside testing apparatus only needs to provide first positive voltage just can obtain plural test voltage by testing element group to gate driver circuit.The size that district or pin are comparatively macroscopic views is touched due to what testing element group is used for carry out electrical contact, and the circuit structure of testing element group itself adopts photoetching technique to be formed, size is very little, and therefore minimizing and the area of external test facility electrical contact can reduce the area shared by testing element group greatly.On the other hand, outside testing apparatus, also without the need to reoffering multiple different voltage, reducing the complexity of outside testing apparatus, reducing testing cost.
Accompanying drawing explanation
Fig. 1 is the screen body structure schematic diagram of the AMOLED of an embodiment;
Fig. 2 is the voltage conversion circuit module map of the AMOLED of an embodiment;
Fig. 3 is the schematic diagram of the voltage conversion circuit in Fig. 2.
Embodiment
As shown in Figure 1, be the screen body structure schematic diagram of AMOLED of an embodiment.Screen body 200, gate driver circuit (gate drive IC) 300 and testing element group (test element group, TEG) 400 that this screen body structure 10 comprises substrate 100 and is located on substrate 100.
Screen body 200 comprises thin film transistor (TFT) (thin filmtransistor, the TFT) array layer and organic electroluminescent layer (not shown) that are formed on the substrate 100 by photoetching technique.Screen body 200 comprises a large amount of thin film transistor (TFT) pixel drive unit 210.The screen body of AMOLED is the technology that those skilled in the art are familiar with, and is not repeated herein.
With reference to the enlarged drawing of the thin film transistor (TFT) pixel drive unit 210 in figure 1, it comprises two thin film transistor (TFT)s M1, M2 and a storage capacitor Cs.When scanning voltage Vscan is cut-in voltage VGH, thin film transistor (TFT) M1 conducting, Vdata can control thin film transistor (TFT) M2, can make that OLED is luminous, corresponding pixel is lighted between supply voltage VDD and reference voltage VREF during conducting.Active matrix organic light-emitting displaying principle is this area routine techniques, is not repeated herein.
In the present embodiment, gate driver circuit 300 is located at the marginal position on substrate 100, is also namely formed with the form of driving circuit in a kind of panel (gate in panel, GIP).This makes it possible on a display screen integrated for the partial function of driving circuit, and tft array layer and gate driver circuit 300 can be formed by a photoetching process simultaneously.This gate driver circuit 300 can receive outside drive singal, drive singal is converted to screen body 200 and works required electrical quantity.
Testing element group 400 is formed together with the tft array layer on screen body 200, and its inside comprises some circuit for testing, such as circuit and square-wave etc.Testing element group 400 is located at the marginal position on substrate 100, is connected with gate driver circuit 300, provides to described gate driver circuit 300 test parameter comprising test voltage.Testing element group 400 also have be electrically connected with external test facility touch district, for touching with the testing tool such as such as probe, obtain test voltage.Testing element group 400 is supplied to gate driver circuit 300 test voltage then.
Voltage conversion circuit 310 is also provided with in gate driver circuit 300.With reference to figure 2, voltage conversion circuit 310 comprises negative pressure module 311 and division module 312.Negative pressure module 311 exports for the first positive voltage VGH of input is converted to the first negative voltage.Division module 312 connects the output terminal that negative pressure module 311 exports described first negative voltage, obtains more than one negative voltage (VGL and VREF in such as figure) output for described first negative voltage being carried out dividing potential drop.
With reference to the circuit structure of thin film transistor (TFT) pixel drive unit in figure 1, the voltage wherein related to comprises VDD, Vscan, Vdata and VREF.VDD can be provided by special power supply, and Vdata is provided by source driving chip (figure does not show, it adopts GIP mode to be arranged on substrate 100 equally).Scanning voltage Vscan comprises sweep trace cut-in voltage VGH and sweep trace closes voltage VGL, and together with reference voltage VREF, the change of this three all can affect the change of the duty of pixel cell.Therefore these three voltages can be provided to screen body 200 when testing.
In traditional test process, testing element group 400 directly provides these three voltages to gate driver circuit 300 by outside testing apparatus, what therefore need to provide three to connect external test facilities in testing element group 400 touches district's (or pin), understands the area outside occupying volume like this.In above-described embodiment, outside testing apparatus only needs to provide a first positive voltage VGH just can obtain three test voltages by testing element group 400 to gate driver circuit 300: sweep trace cut-in voltage VGH, sweep trace close voltage VGL and reference voltage VREF.The size that district or pin are comparatively macroscopic views is touched due to what be used for carrying out electrical contact, and the circuit structure of testing element group 400 itself adopts photoetching technique to be formed, size is very little, and therefore minimizing and the area of external test facility electrical contact can reduce the area shared by testing element group 400 greatly.
On the other hand, outside testing apparatus also without the need to reoffering three kinds of different voltages, reducing the complexity of outside testing apparatus, reducing testing cost.
Be appreciated that, when above-mentioned voltage conversion circuit 310 only provides a negative pressure dividing potential drop VREF or VGL, the testing element group that it still can be relatively traditional reduces the area taken.And if when having other negative pressure value more to need to provide, then more negative voltages can be exported in the division module 312 of voltage conversion circuit 310.Same, if there are more positive voltages to provide, described first positive voltage VGH can be carried out dividing potential drop and obtain.
Be appreciated that above-mentioned voltage conversion circuit 310 also can be arranged in testing element group 400, testing element group 400 converts more than one negative voltage to by input positive voltage, then positive voltage is supplied to gate driver circuit 300 together with negative voltage.
Please refer to Fig. 3, is the schematic diagram of voltage conversion circuit 310.The negative pressure module 311 of this voltage conversion circuit 310 comprises the first film transistor Q1, the second thin film transistor (TFT) Q2, the first resistance R1, the first electric capacity C1, the second electric capacity C2, the first diode D1, the second diode D2 and stabilivolt D3.
The source electrode of the first film transistor Q1 for inputting the first positive voltage VGH, drain electrode is connected with the source electrode of the second thin film transistor (TFT) Q2, grid is for inputting the first square-wave signal CLK; The grounded drain of the second thin film transistor (TFT) Q2, grid are for inputting the second square-wave signal CLK_B; The waveform of the first square-wave signal CLK and the second square-wave signal CLK_B is contrary.First square-wave signal CLK and the second square-wave signal CLK_B can be provided by testing element group 400.
The drain electrode of the first film transistor Q1 connects the first resistance R1, the first electric capacity C1, the first diode D1 successively to the output terminal of negative pressure module 311.Wherein the anode of the first diode D1 connects the first electric capacity C1.Second diode D2 is connected between the negative electrode of the first diode D1 and the drain electrode of the second thin film transistor (TFT) Q2, and the negative electrode of the second diode D2 is connected with the drain electrode of the second thin film transistor (TFT) Q2.Second electric capacity C2 and stabilivolt D3 is in parallel, and is connected between the anode of the first diode D1 and the drain electrode of the second thin film transistor (TFT) Q2, and wherein the negative electrode of stabilivolt D3 is connected with the drain electrode of the second thin film transistor (TFT) Q2.The first film transistor Q1 and the second thin film transistor (TFT) Q2 is P type.
Division module 312 comprises three divider resistances R2, R3, R4 of series connection.Wherein the common port of divider resistance R2 and R3 is the output terminal of a negative voltage VGL, the common port of divider resistance R3 and R4 is the output terminal of another negative voltage VREF.Namely first positive voltage VGH can be sweep trace cut-in voltage, and a negative voltage VGL closes voltage as sweep trace, and another negative voltage VREF as the reference voltage.
By inputting the first contrary square-wave signal CLK and the second square-wave signal CKL_B at the first film transistor Q1 and the second thin film transistor (TFT) Q2 respectively, first positive voltage VGH can be converted to the first negative voltage by above-mentioned voltage conversion circuit 310, then obtains two negative pressure VGL, VREF by suitable dividing potential drop.
Be appreciated that negative pressure module 311 is except adopting foregoing circuit and realizing, and with the circuit of other suitable forms, can also make the square-wave signal that it can provide by means of testing element group 400.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a voltage conversion circuit for the screen body structure of AMOLED, for providing test voltage for the array base palte of described screen body structure, is characterized in that, comprise:
Negative pressure module, exports for the first positive voltage of input is converted to the first negative voltage;
Division module, connects the output terminal that described negative pressure module exports the first negative voltage, obtains the output of more than one negative voltage for described first negative voltage being carried out dividing potential drop;
Described first positive voltage and more than one negative voltage are all as test voltage.
2. the voltage conversion circuit of the screen body structure of AMOLED according to claim 1, it is characterized in that, described negative pressure module comprises the first film transistor, the second thin film transistor (TFT), the first resistance, the first electric capacity, the second electric capacity, the first diode, the second diode and stabilivolt;
The source electrode of described the first film transistor for inputting described first positive voltage, drain electrode is connected with the source electrode of the second thin film transistor (TFT), grid is for inputting the first square-wave signal; The grounded drain of described second thin film transistor (TFT), grid are for inputting the second square-wave signal; The waveform of described first square-wave signal and the second square-wave signal is contrary;
The drain electrode of described the first film transistor connects the first resistance, the first electric capacity, the first diode successively to the output terminal of described negative pressure module; The anode of wherein said first diode connects the first electric capacity;
Described second diode is connected between the negative electrode of the first diode and the drain electrode of the second thin film transistor (TFT), and the negative electrode of described second diode is connected with the drain electrode of described second thin film transistor (TFT);
Described second electric capacity and stabilivolt parallel connection, and be connected between the anode of the first diode and the drain electrode of the second thin film transistor (TFT), the negative electrode of wherein said stabilivolt is connected with the drain electrode of described second thin film transistor (TFT).
3. the voltage conversion circuit of the screen body structure of AMOLED according to claim 2, is characterized in that, described the first film transistor and the second thin film transistor (TFT) are P type.
4. the voltage conversion circuit of the screen body structure of AMOLED according to claim 1, is characterized in that, described division module comprises at least two divider resistances of series connection.
5. the voltage conversion circuit of the screen body structure of AMOLED according to claim 1, is characterized in that, described first positive voltage is sweep trace cut-in voltage, and described more than one negative voltage comprises sweep trace and closes voltage and reference voltage.
6. a screen body structure of AMOLED, comprising:
Substrate;
Screen body, be located on described substrate, described screen body comprises thin film transistor (TFT) pixel drive unit;
Gate driver circuit, is located at the marginal position on described substrate, provides to described screen body the drive singal comprising driving voltage;
Testing element group, is located at the marginal position on described substrate, is connected with described gate driver circuit, provides test voltage to described gate driver circuit;
Wherein, be also provided with voltage conversion circuit in described gate driver circuit or testing element group, described voltage conversion circuit comprises:
Negative pressure module, exports for the first positive voltage of input is converted to the first negative voltage;
Division module, connects the output terminal that described negative pressure module exports the first negative voltage, obtains the output of more than one negative voltage for described first negative voltage being carried out dividing potential drop;
Described first positive voltage and more than one negative voltage are all as test voltage.
7. the screen body structure of AMOLED according to claim 6, it is characterized in that, described negative pressure module comprises the first film transistor, the second thin film transistor (TFT), the first resistance, the first electric capacity, the second electric capacity, the first diode, the second diode and stabilivolt;
The source electrode of described the first film transistor for inputting described first positive voltage, drain electrode is connected with the source electrode of the second thin film transistor (TFT), grid is for inputting the first square-wave signal; The grounded drain of described second thin film transistor (TFT), grid are for inputting the second square-wave signal; The waveform of described first square-wave signal and the second square-wave signal is contrary;
The drain electrode of described the first film transistor connects the first resistance, the first electric capacity, the first diode successively to the output terminal of described negative pressure module; The anode of wherein said first diode connects the first electric capacity;
Described second diode is connected between the negative electrode of the first diode and the drain electrode of the second thin film transistor (TFT), and the negative electrode of described second diode is connected with the drain electrode of described second thin film transistor (TFT);
Described second electric capacity and stabilivolt parallel connection, and be connected between the anode of the first diode and the drain electrode of the second thin film transistor (TFT), the negative electrode of wherein said stabilivolt is connected with the drain electrode of described second thin film transistor (TFT).
8. the screen body structure of AMOLED according to claim 7, is characterized in that, described the first film transistor and the second thin film transistor (TFT) are P type.
9. the screen body structure of AMOLED according to claim 6, is characterized in that, described division module comprises at least two divider resistances of series connection.
10. the screen body structure of AMOLED according to claim 6, is characterized in that, described first positive voltage is sweep trace cut-in voltage, and described more than one negative voltage comprises sweep trace and closes voltage and reference voltage.
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| WO2017202005A1 (en) * | 2016-05-25 | 2017-11-30 | 华南理工大学 | Gate driving unit, row gate scanning driver and driving method thereof |
| WO2020042539A1 (en) * | 2018-08-31 | 2020-03-05 | 重庆惠科金渝光电科技有限公司 | Display device |
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