CN104732694A - Anti-theft alarm system based on photoelectric sensing technology - Google Patents
Anti-theft alarm system based on photoelectric sensing technology Download PDFInfo
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- CN104732694A CN104732694A CN201510149945.4A CN201510149945A CN104732694A CN 104732694 A CN104732694 A CN 104732694A CN 201510149945 A CN201510149945 A CN 201510149945A CN 104732694 A CN104732694 A CN 104732694A
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- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B13/00—Burglar, theft or intruder alarms
- G08B13/18—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength
- G08B13/181—Actuation by interference with heat, light, or radiation of shorter wavelength; Actuation by intruding sources of heat, light, or radiation of shorter wavelength using active radiation detection systems
Abstract
The invention discloses an anti-theft alarm system based on a photoelectric sensing technology. The anti-theft alarm system based on the photoelectric sensing technology is characterized by comprising a radiating circuit (1), a receiving circuit (2), an amplifying circuit (3) which is connected with the receiving circuit (2), a trigger circuit (4) which is connected with the amplifying circuit (3), and an alarm circuit (5) which is connected with the trigger circuit (4). According to the anti-theft alarm system based on the photoelectric sensing technology, the alarm system is controlled through the photoelectric sensing technology, and the safety performance of the alarm system is improved; meanwhile, the trigger circuit adopts an LM387 integrated circuit as a trigger chip, and the sensitivity of the alarm system can be improved.
Description
Technical field
The present invention relates to a kind of warning system, specifically refer to a kind of guard against theft and alarm system based on photoelectric sense technology.
Background technology
The application of current warning system widely, at automobile burglar, barndoor gate, and in home security system, almost employ warning system bar none.Along with developing rapidly of social science and technology, the performance of people to warning system proposes more and more higher requirement.Traditional warning system adopts touch, switching regulator etc. usually.This kind of warning system has stable performance, the feature such as practical, but it is narrow also to have range of application, and the defect that security performance is bad.How solving above-mentioned defect is then people institute problems faced.
Summary of the invention
The object of the invention is to overcome the narrow and defect that security performance is bad of current guard against theft and alarm system range of application, a kind of guard against theft and alarm system based on photoelectric sense technology is provided.
The following technical scheme of object of the present invention realizes: a kind of guard against theft and alarm system based on photoelectric sense technology, by radiating circuit, receiving circuit, the amplifying circuit be connected with receiving circuit, the trigger circuit be connected with amplifying circuit, and the warning circuit be connected with trigger circuit forms.
Further, described radiating circuit is by the chip U that vibrates, triode VT1, one end is connected with VCC pin with the RE pin of vibration chip U simultaneously, the other end in turn through the resistance R1 that resistance R2 is connected with the base stage of triode VT1 after electric capacity C1, the diode D1 that P pole is connected with the emitter of triode VT1, N pole is connected with the OUT pin of the chip U that vibrates after light emitting diode D2 through electric capacity C2 in turn forms; The grounded collector of described triode VT1, while the DIS pin of described vibration chip U is connected with the tie point of resistance R2 with resistance R1, THR pin is all connected with the tie point of electric capacity C1 with resistance R2 with TRI pin, GND pin is connected with the N pole of diode D1, ground connection, CONT pin are connected with the tie point of electric capacity C2 with light emitting diode D2.
Described receiving circuit comprises photodiode D3, resistance R4, resistance R5, resistance R6, electric capacity C3; The positive pole of electric capacity C3 is connected with the P pole of photodiode D3, negative pole is connected with amplifying circuit after resistance R5, one end of resistance R4 is connected with the P pole of photodiode D3, the other end is connected with amplifying circuit after resistance R6, and the N pole of described photodiode D3 is connected with amplifying circuit.
Described amplifying circuit is by amplifier P1, amplifier P2, unidirectional thyristor D5, N pole is connected with trigger circuit, the diode D4 that P pole is connected with the N pole of photodiode D3 after resistance R3, be serially connected in the resistance R8 between the positive pole of amplifier P1 and output terminal, one end is connected with the N pole of diode D4, the resistance R9 that the other end is connected with the control pole of unidirectional thyristor D5, positive pole is connected with the output terminal of amplifier P1, the electric capacity C4 that negative pole is connected with the positive pole of amplifier P2 after resistance R10, N pole is connected with the negative pole of amplifier P2, the diode D6 that P pole is then connected with resistance R6, negative pole is connected with the P pole of diode D6, the electric capacity C5 of plus earth, one end is connected with the negative pole of amplifier P1, while the other end is connected with the P pole of diode D6, the resistance R7 of ground connection forms, the positive pole of described amplifier P1 is connected with resistance R5, and the output terminal of amplifier P2 is connected with trigger circuit, and the N pole of unidirectional thyristor D5 is connected with the P pole of diode D4, P pole is then connected with the tie point of resistance R10 with electric capacity C4.
Described trigger circuit are by flip chip U1, triode VT2, triode VT3, one end is connected with the N pole of diode D4, the resistance R11 that the other end is connected with the IN1 pin of flip chip U1, one end is connected with the output terminal of amplifier P2, the resistance R12 that the other end is connected with the emitter of triode VT3 after resistance R13, negative pole is connected with the VCC pin of flip chip U1, the electric capacity C6 that positive pole is connected with the IN1 pin of flip chip U1, positive pole is connected with the IN2 pin of flip chip U1, the electric capacity C7 of ground connection while negative pole is connected with the tie point of resistance R13 with resistance R12, positive terminal is connected with the VCC pin of flip chip U1, the not gate K that end of oppisite phase is connected with warning circuit, the end of oppisite phase of N pole Sheffer stroke gate K is connected, the diode D7 that P pole is connected with the collector of triode VT2, one end is connected with the emitter of triode VT2, the resistance R14 that the other end is connected with the emitter of triode VT3, the end of oppisite phase of N pole Sheffer stroke gate K is connected, the diode D8 that P pole is connected with the collector of triode VT3 forms, the VCC pin of described flip chip U1 is connected with the output terminal of amplifier P2, OUT pin is connected with the base stage of triode VT2, the ground connection while base stage is connected with the emitter of triode VT2, collector is connected with warning circuit, emitter is connected with warning circuit of triode VT3.
Described warning circuit is by bidirectional thyristor D9, unidirectional thyristor D10, negative pole is connected with the control pole of unidirectional thyristor D10, the electric capacity C8 that positive pole is connected with the N pole of diode D8, one end is connected with the P pole of unidirectional thyristor D10, the resistance R16 that the other end is connected with the control pole of bidirectional thyristor D9 after resistance R15, one end is connected with the tie point of resistance R15 with resistance R16, the resistance R17 that the other end is connected with the second anode of bidirectional thyristor D9, and positive pole is connected with the second anode of bidirectional thyristor D9, the electric capacity C9 that negative pole is connected with the N pole of unidirectional thyristor D10 forms, the N pole of described unidirectional thyristor D10 is connected with the N pole of diode D8, and the first anode of described bidirectional thyristor D9 is connected with the collector of triode VT3, control pole is connected with the emitter of triode VT3.
Described vibration chip U is NE555 integrated circuit, and flip chip U1 is LM387 integrated circuit.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) the present invention adopts photoelectric sense technology to control warning system, improves the security performance of warning system;
(2) trigger circuit of the present invention adopt LM387 integrated circuit as flip chip, can improve the sensitivity of warning system;
(3) electronic component of the present invention is with low cost, is applicable to extensively promoting.
Accompanying drawing explanation
Fig. 1 is integrated circuit structural representation of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention by radiating circuit 1, receiving circuit 2, the amplifying circuit 3 be connected with receiving circuit 2, trigger circuit 4 be connected with amplifying circuit 3, and the warning circuit 5 be connected with trigger circuit 4 forms.
Wherein, radiating circuit 1 is by vibration chip U, triode VT1, one end is connected with VCC pin with the RE pin of vibration chip U simultaneously, the other end in turn through the resistance R1 that resistance R2 is connected with the base stage of triode VT1 after electric capacity C1, the diode D1 that P pole is connected with the emitter of triode VT1, N pole is connected with the OUT pin of the chip U that vibrates after light emitting diode D2 through electric capacity C2 in turn forms; The grounded collector of described triode VT1, ground connection while the DIS pin of described vibration chip U is connected with the tie point of resistance R2 with resistance R1, THR pin is all connected with the tie point of electric capacity C1 with resistance R2 with TRI pin, GND pin is connected with the N pole of diode D1, CONT pin and the light emitting diode D2 VCC pin that is connected with the tie point of electric capacity C2 is then connected with 5V power supply.In radiating circuit 1, vibration chip U is as multivibrator starting of oscillation, and at this moment light emitting diode D2 is then luminous.In order to better implement the present invention, the preferred NE555 integrated circuit of this vibration chip U realizes.
Described receiving circuit 2 comprises photodiode D3, resistance R4, resistance R5, resistance R6, electric capacity C3.During connection, the positive pole of electric capacity C3 is connected with the P pole of photodiode D3, negative pole is connected with amplifying circuit 3 after resistance R5, one end of resistance R4 is connected with the P pole of photodiode D3, the other end is connected with amplifying circuit 3 after resistance R6, external 5V voltage while the N pole of described photodiode D3 is connected with amplifying circuit 3.Photodiode D3 is corresponding with light emitting diode D2, can receive the light signal that light emitting diode D2 sends.
Described amplifying circuit 3 is by amplifier P1, amplifier P2, unidirectional thyristor D5, N pole is connected with trigger circuit 4, the diode D4 that P pole is connected with the N pole of photodiode D3 after resistance R3, be serially connected in the resistance R8 between the positive pole of amplifier P1 and output terminal, one end is connected with the N pole of diode D4, the resistance R9 that the other end is connected with the control pole of unidirectional thyristor D5, positive pole is connected with the output terminal of amplifier P1, the electric capacity C4 that negative pole is connected with the positive pole of amplifier P2 after resistance R10, N pole is connected with the negative pole of amplifier P2, the diode D6 that P pole is then connected with resistance R6, negative pole is connected with the P pole of diode D6, the electric capacity C5 of plus earth, one end is connected with the negative pole of amplifier P1, while the other end is connected with the P pole of diode D6, the resistance R7 of ground connection forms, the positive pole of described amplifier P1 is connected with resistance R5, and the output terminal of amplifier P2 is connected with trigger circuit 4, and the N pole of unidirectional thyristor D5 is connected with the P pole of diode D4, P pole is then connected with the tie point of resistance R10 with electric capacity C4.
Trigger circuit 4 can triggering alarm system, it is by flip chip U1, triode VT2, triode VT3, one end is connected with the N pole of diode D4, the resistance R11 that the other end is connected with the IN1 pin of flip chip U1, one end is connected with the output terminal of amplifier P2, the resistance R12 that the other end is connected with the emitter of triode VT3 after resistance R13, negative pole is connected with the VCC pin of flip chip U1, the electric capacity C6 that positive pole is connected with the IN1 pin of flip chip U1, positive pole is connected with the IN2 pin of flip chip U1, the electric capacity C7 of ground connection while negative pole is connected with the tie point of resistance R13 with resistance R12, positive terminal is connected with the VCC pin of flip chip U1, the not gate K that end of oppisite phase is connected with warning circuit 5, the end of oppisite phase of N pole Sheffer stroke gate K is connected, the diode D7 that P pole is connected with the collector of triode VT2, one end is connected with the emitter of triode VT2, the resistance R14 that the other end is connected with the emitter of triode VT3, the end of oppisite phase of N pole Sheffer stroke gate K is connected, the diode D8 that P pole is connected with the collector of triode VT3 forms.The VCC pin of described flip chip U1 is connected with the output terminal of amplifier P2, OUT pin is connected with the base stage of triode VT2, ground connection while the base stage of triode VT3 is connected with the emitter of triode VT2, collector is connected with warning circuit 5, emitter is connected with warning circuit 5.In order to better implement the present invention, this flip chip U1 is preferably LM387 integrated chip to realize.
Warning circuit 5 is by bidirectional thyristor D9, unidirectional thyristor D10, negative pole is connected with the control pole of unidirectional thyristor D10, the electric capacity C8 that positive pole is connected with the N pole of diode D8, one end is connected with the P pole of unidirectional thyristor D10, the resistance R16 that the other end is connected with the control pole of bidirectional thyristor D9 after resistance R15, one end is connected with the tie point of resistance R15 with resistance R16, the resistance R17 that the other end is connected with the second anode of bidirectional thyristor D9, and positive pole is connected with the second anode of bidirectional thyristor D9, the electric capacity C9 that negative pole is connected with the N pole of unidirectional thyristor D10 forms, the N pole of described unidirectional thyristor D10 is connected with the N pole of diode D8, and the first anode of described bidirectional thyristor D9 is connected with the collector of triode VT3, control pole is connected with the emitter of triode VT3.The N pole of unidirectional thyristor D10 is as the output terminal of system together with its P pole, and this output terminal is then connected with alarm.
After system debug is good, the multivibrator starting of oscillation that vibration chip U-shaped becomes, light emitting diode D2 starts luminescence.Photodiode D3 exports high level after receiving the light signal of light emitting diode D2, and flows to trigger circuit 4 after amplifying circuit 3.Flip chip U1 then output low level when trigger circuit 4 receive high level, at this moment triode VT2 and triode VT3 not conducting, warning system is not reported to the police.
When there being thief to enter, the light signal that light emitting diode D2 sends is stopped, photodiode D3 then cannot receive light signal and output low level.When trigger circuit 4 receive low level, flip chip U1 then exports high level, and at this moment triode VT2 and triode VT3 starts conducting triggered alarm.
As mentioned above, just well the present invention can be realized.
Claims (8)
1. the guard against theft and alarm system based on photoelectric sense technology, it is characterized in that: by radiating circuit (1), receiving circuit (2), the amplifying circuit (3) be connected with receiving circuit (2), the trigger circuit (4) be connected with amplifying circuit (3), and the warning circuit (5) be connected with trigger circuit (4) forms.
2. a kind of guard against theft and alarm system based on photoelectric sense technology according to claim 1, it is characterized in that: described radiating circuit (1) is by vibration chip U, triode VT1, one end is connected with VCC pin with the RE pin of vibration chip U simultaneously, the other end in turn through the resistance R1 that resistance R2 is connected with the base stage of triode VT1 after electric capacity C1, the diode D1 that P pole is connected with the emitter of triode VT1, N pole is connected with the OUT pin of the chip U that vibrates after light emitting diode D2 through electric capacity C2 in turn forms; The grounded collector of described triode VT1, while the DIS pin of described vibration chip U is connected with the tie point of resistance R2 with resistance R1, THR pin is all connected with the tie point of electric capacity C1 with resistance R2 with TRI pin, GND pin is connected with the N pole of diode D1, ground connection, CONT pin are connected with the tie point of electric capacity C2 with light emitting diode D2.
3. a kind of guard against theft and alarm system based on photoelectric sense technology according to claim 2, is characterized in that: described receiving circuit (2) comprises photodiode D3, resistance R4, resistance R5, resistance R6, electric capacity C3; The positive pole of electric capacity C3 is connected with the P pole of photodiode D3, negative pole is connected with amplifying circuit (3) after resistance R5, one end of resistance R4 is connected with the P pole of photodiode D3, the other end is connected with amplifying circuit (3) after resistance R6, and the N pole of described photodiode D3 is connected with amplifying circuit (3).
4. a kind of guard against theft and alarm system based on photoelectric sense technology according to claim 3, it is characterized in that: described amplifying circuit (3) is by amplifier P1, amplifier P2, unidirectional thyristor D5, N pole is connected with trigger circuit (4), the diode D4 that P pole is connected with the N pole of photodiode D3 after resistance R3, be serially connected in the resistance R8 between the positive pole of amplifier P1 and output terminal, one end is connected with the N pole of diode D4, the resistance R9 that the other end is connected with the control pole of unidirectional thyristor D5, positive pole is connected with the output terminal of amplifier P1, the electric capacity C4 that negative pole is connected with the positive pole of amplifier P2 after resistance R10, N pole is connected with the negative pole of amplifier P2, the diode D6 that P pole is then connected with resistance R6, negative pole is connected with the P pole of diode D6, the electric capacity C5 of plus earth, one end is connected with the negative pole of amplifier P1, while the other end is connected with the P pole of diode D6, the resistance R7 of ground connection forms, the positive pole of described amplifier P1 is connected with resistance R5, and the output terminal of amplifier P2 is connected with trigger circuit (4), and the N pole of unidirectional thyristor D5 is connected with the P pole of diode D4, P pole is then connected with the tie point of resistance R10 with electric capacity C4.
5. a kind of guard against theft and alarm system based on photoelectric sense technology according to claim 4, it is characterized in that: described trigger circuit (4) are by flip chip U1, triode VT2, triode VT3, one end is connected with the N pole of diode D4, the resistance R11 that the other end is connected with the IN1 pin of flip chip U1, one end is connected with the output terminal of amplifier P2, the resistance R12 that the other end is connected with the emitter of triode VT3 after resistance R13, negative pole is connected with the VCC pin of flip chip U1, the electric capacity C6 that positive pole is connected with the IN1 pin of flip chip U1, positive pole is connected with the IN2 pin of flip chip U1, the electric capacity C7 of ground connection while negative pole is connected with the tie point of resistance R13 with resistance R12, positive terminal is connected with the VCC pin of flip chip U1, the not gate K that end of oppisite phase is connected with warning circuit (5), the end of oppisite phase of N pole Sheffer stroke gate K is connected, the diode D7 that P pole is connected with the collector of triode VT2, one end is connected with the emitter of triode VT2, the resistance R14 that the other end is connected with the emitter of triode VT3, the end of oppisite phase of N pole Sheffer stroke gate K is connected, the diode D8 that P pole is connected with the collector of triode VT3 forms, the VCC pin of described flip chip U1 is connected with the output terminal of amplifier P2, OUT pin is connected with the base stage of triode VT2, ground connection while the base stage of triode VT3 is connected with the emitter of triode VT2, collector is connected with warning circuit (5), emitter is connected with warning circuit (5).
6. a kind of guard against theft and alarm system based on photoelectric sense technology according to claim 5, it is characterized in that: described warning circuit (5) is by bidirectional thyristor D9, unidirectional thyristor D10, negative pole is connected with the control pole of unidirectional thyristor D10, the electric capacity C8 that positive pole is connected with the N pole of diode D8, one end is connected with the P pole of unidirectional thyristor D10, the resistance R16 that the other end is connected with the control pole of bidirectional thyristor D9 after resistance R15, one end is connected with the tie point of resistance R15 with resistance R16, the resistance R17 that the other end is connected with the second anode of bidirectional thyristor D9, and positive pole is connected with the second anode of bidirectional thyristor D9, the electric capacity C9 that negative pole is connected with the N pole of unidirectional thyristor D10 forms, the N pole of described unidirectional thyristor D10 is connected with the N pole of diode D8, and the first anode of described bidirectional thyristor D9 is connected with the collector of triode VT3, control pole is connected with the emitter of triode VT3.
7. a kind of guard against theft and alarm system based on photoelectric sense technology according to any one of claim 2 ~ 6, is characterized in that: described vibration chip U is NE555 integrated circuit.
8. a kind of guard against theft and alarm system based on photoelectric sense technology according to claim 6, is characterized in that: described flip chip U1 is LM387 integrated circuit.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510149945.4A CN104732694B (en) | 2015-03-31 | 2015-03-31 | Anti-theft alarm system based on photoelectric sensing technology |
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| CN201510149945.4A CN104732694B (en) | 2015-03-31 | 2015-03-31 | Anti-theft alarm system based on photoelectric sensing technology |
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| CN104732694A true CN104732694A (en) | 2015-06-24 |
| CN104732694B CN104732694B (en) | 2017-04-26 |
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Cited By (5)
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| CN105180997A (en) * | 2015-08-04 | 2015-12-23 | 宁波摩米创新工场电子科技有限公司 | Low-pass filter amplifying digital photoelectrical detecting system |
| CN105421982A (en) * | 2015-12-19 | 2016-03-23 | 成都克雷斯达科技有限公司 | Intelligent control system for roller shutter door based on signal processing type selection circuit |
| CN106246584A (en) * | 2016-08-25 | 2016-12-21 | 四川省阳子森环保设备有限公司 | A kind of industrial and mining establishment noise controller |
| CN106871939A (en) * | 2016-12-26 | 2017-06-20 | 浙江科聪智能科技有限公司 | Sensor, robot, industrial robot |
| CN112880710A (en) * | 2021-01-14 | 2021-06-01 | 安徽科达自动化集团股份有限公司 | Photoelectric detection circuit and interval type photoelectric detector with same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106871939B (en) * | 2016-12-26 | 2019-11-29 | 杭州科聪自动化有限公司 | Sensor, robot, industrial robot |
| CN112880710A (en) * | 2021-01-14 | 2021-06-01 | 安徽科达自动化集团股份有限公司 | Photoelectric detection circuit and interval type photoelectric detector with same |
| CN112880710B (en) * | 2021-01-14 | 2022-04-22 | 安徽科达自动化集团股份有限公司 | Photoelectric detection circuit and interval type photoelectric detector with same |
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