CN104730443A - High-power silicon controlled rectifier testing table - Google Patents
High-power silicon controlled rectifier testing table Download PDFInfo
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- CN104730443A CN104730443A CN201510121004.XA CN201510121004A CN104730443A CN 104730443 A CN104730443 A CN 104730443A CN 201510121004 A CN201510121004 A CN 201510121004A CN 104730443 A CN104730443 A CN 104730443A
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- circular
- controlled rectifier
- silicon controlled
- steel plate
- power silicon
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Abstract
The invention discloses a high-power silicon controlled rectifier testing table. The high-power silicon controlled rectifier testing table comprises a steel shell, a silicon controlled rectifier and a bottom face. Four steel column supports are arranged on the periphery of the shell. A circular hole is formed in the top. A nut is fixed to the upper portion of the circular hole, a vertical line is made with the circle center of the circular hole to be perpendicular to the bottom face, a circular steel plate is fixed to the bottom face with the perpendicular foot as the circle center, a circular insulating plate is fixed to the upper portion of the circular steel plate, a copper plate is fixed to the upper portion of the circular insulating plate, the silicon controlled rectifier is arranged above the copper plate, a copper plate, a circular insulating plate and a circular steel plate are arranged above the silicon controlled rectifier in sequence, and the two copper plates are connected with led-out wires in a welding mode respectively. According to the high-power silicon controlled rectifier testing table, the steel shell is adopted, the working state of the silicon controlled rectifier under the pressure welding torque can be simulated, the performance of the silicon controlled rectifier under the specified pressure welding torque can be rapidly and effectively tested, and therefore it is avoided that due to the manufacturing technology defect, a power element is broken through during using.
Description
Technical field
The present invention relates to a kind of controllable silicon test board, be especially applicable to the test to high-power silicon controlled rectifier element function.
Background technology
At present, known controllable silicon method of testing is: test controllable silicon forward reverse resistance value, and then gate pole adds light current pressure, and test controllable silicon forward reverse resistance value, judges controllable silicon quality according to measurement numerical value.But for the controllable silicon components and parts of large-scale kinematic train, controllable silicon performance under the crimping moment of regulation cannot be tested, and closed installation is comparatively inconvenient for on-line measurement controllable silicon performance.Once cause power component to puncture due to silicon controlled manufacturing process defect, will serious equipment breakdown be caused, even threaten staff's personal safety.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of high-power silicon controlled rectifier test board, fast, effectively can solve a difficult problem for the controllable silicon components and parts performance of testing large kinematic train under the crimping moment of regulation.
For solving the problems of the technologies described above, the technical solution adopted in the present invention is: a kind of high-power silicon controlled rectifier test board, comprise steel shell, controllable silicon, test board bottom surface and electric control system, described shell surrounding is provided with four steel columns, top is provided with a circular hole, a nut is fixed above circular hole, vertical line is made perpendicular to bottom surface with the center of circle of circular hole, be that a circular steel plate is fixed on bottom surface in the center of circle with intersection point, a circular insulating board is fixed with above described circular steel plate, a copper coin is fixed with above described circular insulating board, it is controllable silicon above described copper coin, copper coin is followed successively by above controllable silicon, circular insulating board and circular steel plate, described two copper coins weld extraction wire respectively.
The diameter of described circular hole is 27mm.
Described nut-welding is above the circular hole of cover top portion, and nut is provided with the bolt be mated.
Described circular insulating board is circular bakelite plate.
Described circular steel plate, circular insulating board and copper coin are pasted in aggregates.
Described circular steel plate, circular insulating board are identical with diameter with the thickness of copper coin.
The thickness of described circular steel plate, circular insulating board and copper coin is 10mm, and diameter is 100mm.
Beneficial aspects of the present invention is: high-power silicon controlled rectifier test board of the present invention, adopt steel shell, the duty of controllable silicon under crimping moment can be simulated, the performance of controllable silicon under the crimping moment of regulation can be tested quickly and efficiently, thus avoid because manufacturing process defect causes power component in use to puncture.
Accompanying drawing explanation
fig. 1for structural representation of the present invention
figure.
fig. 2for circuit of the present invention
figure.
in figure: 1 is test board bottom surface, and 2,9 is circular steel plate, and 3,8 is circular insulating board, and 4,7 is copper coin, 5-steel column, 6-controllable silicon, and 10 is shell, and 11 is nut, and 12 is bolt, and 13 is wire, 14-electric control system.
Embodiment
Below in conjunction with
accompanying drawingand embodiment the invention will be further described.
as Fig. 1shown in: to test the controllable silicon of 3000A, a kind of high-power silicon controlled rectifier test board, comprise steel shell 10, controllable silicon 6, test board bottom surface 1 and electric control system 14, described shell 10 surrounding is provided with four steel columns 5, fixation is played to a whole set of test macro, shell 10 top is provided with a circular hole, a nut 11 is fixed above circular hole, vertical line is made perpendicular to bottom surface 1 with the center of circle of circular hole, be that a circular steel plate 2 is fixed on bottom surface in the center of circle with intersection point, a circular insulating board 3 is fixed with above described circular steel plate 2, a copper coin 4 is fixed with above described circular insulating board 3, be controllable silicon 6 above described copper coin 4, copper coin 7 is followed successively by above controllable silicon 6, circular insulating board 8 and circular steel plate 9, described two copper coins 4, on 7, wire 13 is drawn in welding respectively.
The diameter of described circular hole is 27mm.
Described nut 11 is welded on above the circular hole at shell 10 top, and nut 11 is provided with the bolt 12 be mated, for being compressed by controllable silicon 6.
Described circular insulating board 3,8 is circular bakelite plate, insulate, prevent test board charged to device, impact test effect.
Described circular steel plate 2, circular insulating board 3 and copper coin 4 are pasted in aggregates, and an entirety pasted into by circular steel plate 9, circular insulating board 8 and copper coin 7.
Described circular steel plate 2,9, circular insulating board 3,8 is identical with diameter with the thickness of copper coin 4,7.
Described circular steel plate 2,9, the thickness of circular insulating board 3,8 and copper coin 4,7 is 10mm, diameter is 100mm.
During installation, be placed on by silicon controlled negative electrode on the copper coin above bottom surface, anode surface places another block copper coin, is alignd with the silicon controlled center of circle in the center of circle of two copper coins, utilizes the bolt at top to be compressed by controllable silicon, and recycling torque spanner is fastened to 450NM.First, measure the forward and reverse resistance of controllable silicon with multimeter, when controllable silicon resistance is greater than 30K Ω, judge that controllable silicon meets request for utilization.Then, by silicon controlled negative electrode, anode and gate pole access test circuit, power transmission closes controllable silicon major loop contactor, operation gate pole button 10 times.If the instruction of major loop lamp is normal, then judge that controllable silicon is normal.Otherwise judge that controllable silicon is abnormal, can not use.
as Fig. 2shown in: have a switch in circuit, two buttons are respectively the SB1 controlling gate pole and the SB2 controlling major loop break-make.When tested, closed a floodgate by major loop SB2, now, owing to protecting the effect of line, make KM1 adhesive and self-insurance, after major loop energising, when controllable silicon is normal, the test lamp in major loop does not work.When 3V voltage is added to gate pole by the SB1 controlling gate pole, the test lamp in major loop is bright, then controllable silicon is normal.
Can existing techniques in realizing be passed through without the technical characteristic described in the present invention, not repeat them here.The foregoing is only better embodiment of the present invention, the present invention is not limited in above-mentioned embodiment, and the change that those of ordinary skill in the art make in essential scope of the present invention, remodeling, interpolation or replacement also should belong to protection scope of the present invention.
Claims (8)
1. a high-power silicon controlled rectifier test board, comprise steel shell, controllable silicon and bottom surface, it is characterized in that: described shell surrounding is provided with four steel columns, top is provided with a circular hole, a nut is fixed above circular hole, vertical line is made perpendicular to bottom surface with the center of circle of circular hole, be that a circular steel plate is fixed on bottom surface in the center of circle with intersection point, a circular insulating board is provided with above described circular steel plate, a copper coin is provided with above described circular insulating board, it is controllable silicon above described copper coin, copper coin is provided with successively above controllable silicon, circular insulating board and circular steel plate, described two copper coins weld extraction wire respectively.
2. high-power silicon controlled rectifier test board according to claim 1, is characterized in that: the diameter of described circular hole is 27mm.
3. high-power silicon controlled rectifier test board according to claim 1, is characterized in that: described nut-welding is above the circular hole of cover top portion.
4. high-power silicon controlled rectifier test board according to claim 3, is characterized in that: described nut is provided with the bolt be mated.
5. high-power silicon controlled rectifier test board according to any one of claim 1 to 4, is characterized in that: described circular insulating board is circular bakelite plate.
6. high-power silicon controlled rectifier test board according to any one of claim 1 to 4, is characterized in that: described circular steel plate, circular insulating board and copper coin are pasted in aggregates.
7. high-power silicon controlled rectifier test board according to any one of claim 1 to 4, is characterized in that: described circular steel plate, circular insulating board are identical with diameter with the thickness of copper coin.
8. high-power silicon controlled rectifier test board according to claim 7, is characterized in that: the thickness of described circular steel plate, circular insulating board and copper coin is 10mm, and diameter is 100mm.
Priority Applications (1)
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CN201510121004.XA CN104730443A (en) | 2015-03-19 | 2015-03-19 | High-power silicon controlled rectifier testing table |
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CN201510121004.XA CN104730443A (en) | 2015-03-19 | 2015-03-19 | High-power silicon controlled rectifier testing table |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN2754106Y (en) * | 2004-12-13 | 2006-01-25 | 宝钢集团上海梅山有限公司 | Simple high-power silicon controlled rectifier measuring instrument |
CN201017023Y (en) * | 2007-03-05 | 2008-02-06 | 烟台鲁宝钢管有限责任公司 | Inductor for detecting controlled silicon conducting |
CN203643563U (en) * | 2013-11-18 | 2014-06-11 | 中国科学院苏州生物医学工程技术研究所 | A semiconductor laser chip testing apparatus |
US20140247037A1 (en) * | 2011-09-22 | 2014-09-04 | Tokyo Electron Limited | Probe apparatus |
CN203825151U (en) * | 2013-11-30 | 2014-09-10 | 国家电网公司 | Multifunctional portable thyristor tester |
CN204166002U (en) * | 2014-11-11 | 2015-02-18 | 武汉钢铁(集团)公司 | Controllable silicon hold down gag |
CN204515080U (en) * | 2015-03-19 | 2015-07-29 | 山东钢铁股份有限公司 | A kind of high-power silicon controlled rectifier test board |
-
2015
- 2015-03-19 CN CN201510121004.XA patent/CN104730443A/en active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2754106Y (en) * | 2004-12-13 | 2006-01-25 | 宝钢集团上海梅山有限公司 | Simple high-power silicon controlled rectifier measuring instrument |
CN201017023Y (en) * | 2007-03-05 | 2008-02-06 | 烟台鲁宝钢管有限责任公司 | Inductor for detecting controlled silicon conducting |
US20140247037A1 (en) * | 2011-09-22 | 2014-09-04 | Tokyo Electron Limited | Probe apparatus |
CN203643563U (en) * | 2013-11-18 | 2014-06-11 | 中国科学院苏州生物医学工程技术研究所 | A semiconductor laser chip testing apparatus |
CN203825151U (en) * | 2013-11-30 | 2014-09-10 | 国家电网公司 | Multifunctional portable thyristor tester |
CN204166002U (en) * | 2014-11-11 | 2015-02-18 | 武汉钢铁(集团)公司 | Controllable silicon hold down gag |
CN204515080U (en) * | 2015-03-19 | 2015-07-29 | 山东钢铁股份有限公司 | A kind of high-power silicon controlled rectifier test board |
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Effective date of abandoning: 20180907 |