CN104730111A - Metal-oxide-semiconductor field effect transistor (MOSFET) biosensor based on Si/SiGe/Si quantum well, and preparation method of biosensor - Google Patents
Metal-oxide-semiconductor field effect transistor (MOSFET) biosensor based on Si/SiGe/Si quantum well, and preparation method of biosensor Download PDFInfo
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Abstract
The invention provides a metal-oxide-semiconductor field effect transistor (MOSFET) biosensor based on a Si/SiGe/Si quantum well, and a preparation method of the biosensor. The preparation method comprises the steps of (1) providing a Si/SiGe/silicon on insulator (SOI) substrate; (2) manufacturing a device area on the surface of the Si/SiGe/SOI substrate; (3) injecting P-type ions into the two sides of the top layer of Si/SiGe/Si to form a P<+> source region and a P<+> drain region; (4) forming dielectric layers on the surface of the Si/SiGe/SOI substrate; (5) forming metal contact openings in the dielectric layers corresponding to the P<+> source region and the P<+> drain region, and manufacturing a metal contact electrode; (6) manufacturing an electrode protection layer, and enabling the electrode protection layer to be exposed out of a grid sensing area; (7) manufacturing a back grid; (8) carrying out surface activation modification on the surface of the grid sensing area. The SiGe material with high migration rate is taken as a channel, and the Si/SiGe/Si quantum well structure is adopted, so that information with higher signal to noise ratio can be obtained by the same technology; therefore, compared with the conventional silicon device, the MOSFET biosensor has higher sensitivity and can be used for detecting biological molecules with high sensitivity.
Description
Technical field
The present invention relates to a kind of biosensing device and preparation method thereof, particularly relate to a kind of biology sensor based on Si/SiGe/Si quantum well MOSFET and preparation method thereof.
Background technology
Biology sensor (biosensor) is responsive and its concentration is converted to the instrument that electric signal detects to biological substance.Make analysis tool that recognition component (comprising the bioactivators such as enzyme, antibody, antigen, microorganism, cell, tissue, nucleic acid) and suitable physics and chemistry transducer (as oxygen electrode, photosensitive tube, field effect transistor, piezoelectric crystal etc.) and signal amplifying apparatus form or system by immobilized biological sensitive materials.Biology sensor has the function of receptacle and converter.Responsive and its concentration is converted to the instrument that electric signal detects to biological substance.Various biology sensor has following common structure: comprise one or several relevant biological activity materials (biological membrane) and the signal that biologically active is expressed can be converted to physics or the chemical transducer (sensor) of electric signal, the two is combined, carry out the reprocessing of bio signal with modern microelectronic and automation instrument technology, form various operable biosensor analysis device, instrument and system.
S.J. Wu Pudike in 1967 etc. have made first biology sensor glucose sensor.Glucose oxidase is included in polyacrylamide colloid and is solidified, then this colloidal film is fixed on the tip of barrier film oxygen electrode, just made glucose sensor.When using the cured film such as other enzyme or microorganism instead, other sensors detecting its homologue just can be obtained.The method fixedly experiencing film has direct chemical bonding processes; Macromolecule carrier method; Polymeric membrane combined techniques.Now develop second generation biology sensor (microorganism, immunity, enzyme immunity and cell organelle sensor), Study and Development Third Generation Biosensors, by the Field effect transistor based Biosensor that Systems biotechnology and electronic technology combine, the nineties opens microflow control technique, and the micro-fluidic chip of biology sensor is integrated into drug screening and gene diagnosis etc. and provides new technical prospect.Because enzyme membrane, Mitochondrial electron transmission system particle membrane, microbial film, antigenic membrane, the molecular structure of antibody membrane to biological substance have Selective recognition function, only play catalytic activation effect to specific reaction, therefore biology sensor has very high selectivity.Shortcoming is that biological curing film is unstable.What biology sensor related to is biological substance, the aspect such as implementing monitoring, fermentation industry, food industry, environment and robot when being mainly used in clinical diagnosis inspection, treatment.
Biology sensor is the cross discipline organically combined with bioactive materials (enzyme, protein, DNA, antibody, antigen, biological membrane etc.) and physical chemistry transducer, being detection method and the method for supervising of the requisite a kind of advanced person of development biotechnology, is also quick, the microanalysis method of material molecule level.In following 21 century knowledge economy development; biosensor technology will be the new growing point between information and biotechnology, has a wide range of applications in the clinical diagnosis in national economy, Industry Control, food and Pharmaceutical Analysis (comprising bio-pharmaceutical research and development), environmental protection and the research such as biotechnology, biochip.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of biology sensor based on Si/SiGe/Si quantum well MOSFET and preparation method thereof, to realize a kind of there is higher sensitivity, the biology sensor of high-sensitive detection can be carried out to biomolecule.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET, described preparation method comprises step:
1) provide a Si/SiGe/SOI substrate, described Si/SiGe/SOI substrate comprises body silicon substrate, oxygen buried layer, Si/SiGe/Si top layer;
2) photoetching process and dry etch process is utilized to produce device area in described Si/SiGe/SOI substrate surface;
3) adopt ion implantation technology in described Si/SiGe/Si top layer both sides implanting p-type ion, form P+ source region and P+ drain region, the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region;
4) dielectric layer is formed in described Si/SiGe/Si topsheet surface;
5) utilize photoetching process and dry etch process to form Metal Contact perforate in the dielectric layer corresponding with described P+ source region and P+ drain region, and make Metal contact electrode;
6) make electrode protecting layer, and expose gate sensing region, described gate sensing region is region corresponding to channel region;
7) backgate is made in the described body silicon substrate back side;
8) surface active modification is carried out to gate sensing region surface, for the detection to biomolecule.
As a kind of preferred version of the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention, step 4) described in dielectric layer be alumina layer.
As a kind of preferred version of the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention, step 6) comprise step:
PECVD method 6-1) is adopted to grow one deck silicon nitride layer;
Photoetching process and dry etch process 6-2) is utilized to remove silicon nitride layer corresponding above described channel region, to expose gate sensing region.
As a kind of preferred version of the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention, step 8) adopt APTES to carry out surface active modification to gate sensing region surface.
As a kind of preferred version of the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention, step 8) comprise step:
Mixed solution 8-1) device being put into ethanol, water and APTES processes, and the processing time is 1 ~ 10 hour;
8-2) process rear ethanol and the deionized water of adopting respectively to clean, and dried at 60 ~ 120 DEG C.
The present invention also provides a kind of biology sensor based on Si/SiGe/Si quantum well MOSFET, comprising:
Si/SiGe/SOI substrate, described Si/SiGe/SOI substrate comprises body silicon substrate, oxygen buried layer, Si/SiGe/Si top layer;
P+ source region and P+ drain region, be formed at described Si/SiGe/Si top layer both sides, and the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region;
Dielectric layer, is formed at described Si/SiGe/Si topsheet surface, and the region that described dielectric layer is corresponding with described P+ source region and P+ drain region is formed with Metal Contact perforate, is formed with Metal contact electrode in described Metal Contact perforate;
Electrode protecting layer, is covered in described Metal contact electrode, and exposes gate sensing region, and described gate sensing region is region corresponding to channel region;
Backgate, is formed at the described body silicon substrate back side;
Activation decorative material, is formed at described gate sensing region surface.
As a kind of preferred version of the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention, described dielectric layer is alumina layer.
As a kind of preferred version of the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention, described electrode protecting layer is silicon nitride layer.
As a kind of preferred version of the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention, described activation decorative material is APTES.
As mentioned above, the invention provides a kind of biology sensor based on Si/SiGe/Si quantum well MOSFET and preparation method thereof, described preparation method comprises step: 1) provide a Si/SiGe/SOI substrate, and described Si/SiGe/SOI substrate comprises body silicon substrate, oxygen buried layer, Si/SiGe/Si top layer; 2) photoetching process and dry etch process is utilized to produce device area in described Si/SiGe/SOI substrate surface; 3) adopt ion implantation technology in described Si/SiGe/Si top layer both sides implanting p-type ion, form P+ source region and P+ drain region, the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region; 4) dielectric layer is formed in described Si/SiGe/Si topsheet surface; 5) utilize photoetching process and dry etch process to form Metal Contact perforate in the dielectric layer corresponding with described P+ source region and P+ drain region, and make Metal contact electrode; 6) make electrode protecting layer, and expose gate sensing region, described gate sensing region is region corresponding to channel region; 7) backgate is made in the described body silicon substrate back side; 8) surface active modification is carried out to gate sensing region surface, for the detection to biomolecule.The present invention adopts the sige material of high mobility material as raceway groove, and the structure of the quantum well of Si/SiGe/Si, the information of more high s/n ratio will be obtained under same process, thus there is higher sensitivity compared with conventional silicon device, therefore biology sensor of the present invention can carry out high-sensitive detection to biomolecule.
Accompanying drawing explanation
The structural representation that each step of preparation method that Fig. 1 a ~ Fig. 9 is shown as the biology sensor based on Si/SiGe/Si quantum well MOSFET of the present invention presents.
Element numbers explanation
101 body silicon substrates
102 oxygen buried layers
103 channel regions
104 Si/SiGe/Si top layers
1041 Si layers
1042 SiGe layer
1043 Si layers
105 P+ source regions
106 P+ drain regions
107 dielectric layers
108 Metal Contact perforates
109 Metal contact electrode
110 electrode protecting layers
111 backgates
112 activation decorative materials
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 a ~ Fig. 9.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Fig. 1 a ~ Fig. 9, the present embodiment provides a kind of preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET, and described preparation method comprises step:
As shown in Fig. 1 a ~ Fig. 1 b, first carry out step 1), provide a Si/SiGe/SOI substrate, described Si/SiGe/SOI substrate comprises body silicon substrate 101, oxygen buried layer 102, Si/SiGe/Si top layer 104; Described Si/SiGe/Si top layer comprises the Si layer 1041, SiGe layer 1042 and the Si layer 1043 that stack gradually, and as shown in Figure 1 b, described Si/SiGe/Si top layer is incorporated into described oxygen buried layer 102 surface.
As shown in Fig. 1 a ~ Fig. 1 b, then carry out step 2), utilize photoetching process and dry etch process to produce device area in described Si/SiGe/SOI substrate surface.
As shown in Figure 2, then carry out step 3), adopt ion implantation technology in described Si/SiGe/Si top layer both sides implanting p-type ion, form P+ source region 105 and P+ drain region 106, the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region 103.
Exemplarily, mask layer is formed prior to described Si/SiGe/SOI substrate, then, after adopting photoetching process and etching technics to open window on Si/SiGe/Si top layer both sides, carry out P type ion implantation according to the window's position, finally carry out the preparation of having annealed P+ source region 105 and P+ drain region 106.In the present embodiment, described P type ion is boron.
As shown in Figure 3, then carry out step 4), form dielectric layer surface in described Si/SiGe/Si topsheet surface and form dielectric layer 107.
Exemplarily, described dielectric layer 107 is alumina layer, can adopt as the techniques such as chemical vapour deposition technique are prepared.Certainly, other dielectric material also may be applicable to the present embodiment, therefore, is not limited thereto the example that place is enumerated.
As shown in Fig. 4 ~ Fig. 5, then carry out step 5), utilize photoetching process and dry etch process to form Metal Contact perforate 108 in the dielectric layer 107 corresponding with described P+ source region 105 and P+ drain region 106, and make Metal contact electrode 109.
Exemplarily, described Metal contact electrode 109 is Al.
As shown in Fig. 6 ~ Fig. 7; then carry out step 6), make electrode protecting layer 110, and expose gate sensing region; described gate sensing region is the region of channel region 103 correspondence, does not namely carry out the region that the Si/SiGe/Si top layer of ion implantation is corresponding between described P+ source region and P+ drain region.
Exemplarily, step 6) comprise step:
As shown in Figure 6, first carry out step 6-1), adopt PECVD method to grow one deck silicon nitride layer;
As shown in Figure 7, then carry out step 6-2), utilize photoetching process and dry etch process to remove silicon nitride layer corresponding above described channel region, to expose gate sensing region, described gate sensing region is the region of channel region 103 correspondence.
As shown in Figure 8, then carry out step 7), make backgate 111 in described body silicon substrate 101 back side.
Exemplarily, prior to described body silicon substrate 101 backside deposition layer of metal layer, then carry out annealing and make this metal level and described body silicon substrate 101 form Ohmic contact, to complete the making of described backgate 111.In the present embodiment, described metal level is Al.
As shown in Figure 9, finally carry out step 8), surface active modification is carried out to gate sensing region surface, for the detection to biomolecule.
Exemplarily, step 8) adopt APTES to carry out surface active modification to gate sensing region surface.
Particularly, step 8) comprise step:
Mixed solution 8-1) device being put into ethanol, water and APTES processes, and the processing time is 1 ~ 10 hour, and in the present embodiment, the volume ratio of described ethanol, water and APTES is 95:3:2, and the time of process is 2 hours;
8-2) processed rear ethanol and the deionized water of adopting respectively to clean, and dried at 60 ~ 120 DEG C, in the present embodiment, drying the temperature adopted is 100 DEG C.
As shown in Figure 9, the present embodiment also provides a kind of biology sensor based on Si/SiGe/Si quantum well MOSFET, comprising:
Si/SiGe/SOI substrate, described Si/SiGe/SOI substrate comprises body silicon substrate 101, oxygen buried layer 102, Si/SiGe/Si top layer 104.Described Si/SiGe/Si top layer 104 comprises the Si layer, SiGe layer and the Si layer that stack gradually, and described Si/SiGe/Si top layer is incorporated into described oxygen buried layer 102 surface;
P+ source region 105 and P+ drain region 106, be formed at described Si/SiGe/Si top layer both sides, and the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region 103;
Dielectric layer 107, is formed at described Si/SiGe/Si topsheet surface, and the region that described dielectric layer 107 is corresponding with described P+ source region 105 and P+ drain region 106 is formed with Metal Contact perforate 108, is formed with Metal contact electrode 109 in described Metal Contact perforate 108;
Electrode protecting layer 110, is covered in described Metal contact electrode 109, and exposes gate sensing region, and described gate sensing region is the region of channel region 103 correspondence;
Backgate 111, is formed at described body silicon substrate 101 back side;
Activation decorative material 112, is formed at described gate sensing region surface.
Exemplarily, described dielectric layer 107 is alumina layer.
Exemplarily, described electrode protecting layer 110 is silicon nitride layer.
Exemplarily, described activation decorative material 112 is APTES.
As mentioned above, the invention provides a kind of biology sensor based on Si/SiGe/Si quantum well MOSFET and preparation method thereof, described preparation method comprises step: 1) provide a Si/SiGe/SOI substrate, and described Si/SiGe/SOI substrate comprises body silicon substrate, oxygen buried layer, Si/SiGe/Si top layer; 2) photoetching process and dry etch process is utilized to produce device area in described Si/SiGe/SOI substrate surface; 3) adopt ion implantation technology in described Si/SiGe/Si top layer both sides implanting p-type ion, form P+ source region and P+ drain region, the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region; 4) dielectric layer is formed in described Si/SiGe/Si topsheet surface; 5) utilize photoetching process and dry etch process to form Metal Contact perforate in the dielectric layer corresponding with described P+ source region and P+ drain region, and make Metal contact electrode; 6) make electrode protecting layer, and expose gate sensing region, described gate sensing region is region corresponding to channel region; 7) backgate is made in the described body silicon substrate back side; 8) surface active modification is carried out to gate sensing region surface, for the detection to biomolecule.The present invention adopts the sige material of high mobility material as raceway groove, and the structure of the quantum well of Si/SiGe/Si, the information of more high s/n ratio will be obtained under same process, thus there is higher sensitivity compared with conventional silicon device, therefore biology sensor of the present invention can carry out high-sensitive detection to biomolecule.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (9)
1. based on a preparation method for the biology sensor of Si/SiGe/Si quantum well MOSFET, it is characterized in that, described preparation method comprises step:
1) provide a Si/SiGe/SOI substrate, described Si/SiGe/SOI substrate comprises body silicon substrate, oxygen buried layer, Si/SiGe/Si top layer;
2) photoetching process and dry etch process is utilized to produce device area in described Si/SiGe/SOI substrate surface;
3) adopt ion implantation technology in the both sides implanting p-type ion of described Si/SiGe/Si top layer, form P+ source region and P+ drain region, the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region;
4) dielectric layer is formed in described Si/SiGe/Si topsheet surface;
5) utilize photoetching process and dry etch process to form Metal Contact perforate in the dielectric layer corresponding with described P+ source region and P+ drain region, and make Metal contact electrode;
6) make electrode protecting layer, and expose gate sensing region, described gate sensing region is region corresponding to channel region;
7) backgate is made in the described body silicon substrate back side;
8) surface active modification is carried out to gate sensing region surface, for the detection to biomolecule.
2. the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET according to claim 1, is characterized in that: step 4) described in dielectric layer be alumina layer.
3. the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET according to claim 1, is characterized in that: step 6) comprise step:
PECVD method 6-1) is adopted to grow one deck silicon nitride layer;
Photoetching process and dry etch process 6-2) is utilized to remove silicon nitride layer corresponding above described channel region, to expose gate sensing region.
4. the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET according to claim 1, is characterized in that: step 8) adopt APTES to carry out surface active modification to gate sensing region surface.
5. the preparation method of the biology sensor based on Si/SiGe/Si quantum well MOSFET according to claim 4, is characterized in that: step 8) comprise step:
Mixed solution 8-1) device being put into ethanol, water and APTES processes, and the processing time is 1 ~ 10 hour;
8-2) process rear ethanol and the deionized water of adopting respectively to clean, and dried at 60 ~ 120 DEG C.
6. based on a biology sensor of Si/SiGe/Si quantum well MOSFET, it is characterized in that, comprising:
Si/SiGe/SOI substrate, described Si/SiGe/SOI substrate comprises body silicon substrate, oxygen buried layer, Si/SiGe/Si top layer;
P+ source region and P+ drain region, be formed at described Si/SiGe/Si top layer both sides, and the Si/SiGe/Si top layer not carrying out ion implantation between described P+ source region and P+ drain region is channel region;
Dielectric layer, is formed at described Si/SiGe/Si topsheet surface, and the region that described dielectric layer is corresponding with described P+ source region and P+ drain region is formed with Metal Contact perforate, is formed with Metal contact electrode in described Metal Contact perforate;
Electrode protecting layer, is covered in described Metal contact electrode, and exposes gate sensing region, and described gate sensing region is region corresponding to channel region;
Backgate, is formed at the described body silicon substrate back side;
Activation decorative material, is formed at described gate sensing region surface.
7. the biology sensor based on Si/SiGe/Si quantum well MOSFET according to claim 6, is characterized in that: described dielectric layer is alumina layer.
8. the biology sensor based on Si/SiGe/Si quantum well MOSFET according to claim 6, is characterized in that: described electrode protecting layer is silicon nitride layer.
9. the biology sensor based on Si/SiGe/Si quantum well MOSFET according to claim 6, is characterized in that: described activation decorative material is APTES.
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| CN110672700B (en) * | 2019-10-18 | 2022-06-03 | 广东省半导体产业技术研究院 | Biological electronic chip and manufacturing method thereof |
| WO2021141701A1 (en) * | 2020-01-09 | 2021-07-15 | Applied Materials, Inc. | Methods to fabricate dual pore devices |
| US11536708B2 (en) | 2020-01-09 | 2022-12-27 | Applied Materials, Inc. | Methods to fabricate dual pore devices |
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