CN104707244A - Implantable nerve stimulation system - Google Patents
Implantable nerve stimulation system Download PDFInfo
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- CN104707244A CN104707244A CN201510147081.2A CN201510147081A CN104707244A CN 104707244 A CN104707244 A CN 104707244A CN 201510147081 A CN201510147081 A CN 201510147081A CN 104707244 A CN104707244 A CN 104707244A
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Abstract
The invention relates to an implantable nerve stimulation system which comprises a pulse generator, a central controller, a DCDC power supply, a hybrid high-precision DAC (digital-to-analogue converter), a current output feedback, a DCDC multi-path output DAC, a DCDC multi-path option switch, an energy-storage capacitor selecting multi-path switch, an energy-storage capacitor array, a high-voltage selection circuit and a channel selection switch array, wherein the DCDC power supply is electrically connected with the energy-storage capacitor array; the energy-storage capacitor array is electrically connected with the channel selection switch array; the hybrid high-precision DAC is used for receiving digital input of the central controller, outputting corresponding current and feeding back and reporting the current output condition to the central controller through the current output feedback; the DCDC multi-path output DAC is electrically connected with the current output feedback, and is electrically connected with the DCDC power supply through the DCDC multi-path option switch; and the DCDC multi-path output DAC is used for setting the output voltage of the DCDC power supply.
Description
Technical field
The invention belongs to mini-medical instrument field, the implantable nerve stimulating system of particularly a kind of medical treatment use and its method of work.
Background technology
Implantable nerve stimulating system kind is a lot, as implanted brain depth stimulator, implanted spinal stimulator, implanted vagus nerve stimulator etc.Produce pulse by the stimulation output module of implantable nerve stimulating system, discharge high-frequency electrical stimulation by implant electrode, stimulate the nerve of specific part in body, thus realize the therapeutical effect to specified disease.
Due to implantable nerve stimulating system use time, the direct implant into body organization internal of its stimulating electrode.Therefore, this kind equipment is directly connected to the safety of implantation person, needs the human nerve tissue to it directly stimulates to realize strict charge balance.
Current implantable nerve stimulating system, the electric current of its constant current exports many resistance two ends by variable voltage is acted on a certain size through voltage follower and realizes.When the design of the program makes high precision constant current export, resistance both end voltage excursion is comparatively large, directly causes output voltage tolerance limit less, makes the energy efficiency of system lower, define the mutual restriction of energy efficiency and precision.And the electric current output of other implantable nerve stimulating system constant currents is realized by the mode of current mirror gating in parallel, when stimulating current is larger, which will make the width of current mirror very wide, take great chip area, thus limiting the amplitude range of output current, the matching problem of the current mirror under high precision design also can form restriction to precision.Meanwhile, be limited by precision characteristic, the continuous current of Current neural stimulating system exports and realizes, to meet the safety of implantable nerve stimulating system to realize the many modes by passive charge balance of strict charge balance.But the mode of passive charge balance makes more, the passive charge balanced time of sheet external component in system longer, and passive charge balance process waveforms amplitude is uncontrollable, controls also underaction.And possess the constant current implantable nerve stimulating system of active charge balancing function, there is again the problems such as the charge balance safety deficiency that efficiency is low, constant current output precision causes not in its electricity usage scheme.
Summary of the invention
In view of this, necessaryly provide a kind of efficiency high and the implantable nerve stimulating system that charge balance safety is high and method of work thereof.
A kind of implantable nerve stimulating system, it comprises: a pulse generator, a stimulating electrode, and a vitro program controlled instrument; Wherein, described pulse generator comprises: a central controller, a DCDC power supply, a mixed type high accuracy DAC, an electric current output feedack, a DCDC multiple-channel output DAC, a DCDC multidiameter option switch, a storage capacitor select variable connector, a storage capacitor array, a high voltage selection circuit, to accommodate the shell of said elements for the channel selector switch array and be electrically connected with the contact array of described stimulating electrode by this pulse generator;
Described central controller selects variable connector and channel selector switch array electric to be connected with described DCDC power supply, mixed type high accuracy DAC, electric current output feedack, DCDC multiple-channel output DAC, DCDC multidiameter option switch, storage capacitor respectively, and for controlling its work;
Described DCDC power supply selects variable connector to be connected with described storage capacitor array electric by described storage capacitor, and for charging to described storage capacitor array;
Described storage capacitor array is connected with described channel selector switch array electric by described high voltage selection circuit, and provides electric pulse stimulation by this channel selector switch array to the contact array of described stimulating electrode;
Described mixed type high accuracy DAC comprises: a low order generator, a high significance bit generator, a threshold voltage vt reference circuit, a low reference voltage and a low-voltage follower; Described mixed type high accuracy DAC inputs for the digital quantity receiving described central controller and exports corresponding size of current, and this electric current output situation is informed this central controller in real time by this electric current output feedack;
Described electric current output feedack is electrically connected with low-voltage follower output mos pipe, exports situation for the electric current received from described mixed type high accuracy DAC and informs this central controller in real time;
Described DCDC multiple-channel output DAC is electrically connected with described electric current output feedack, and is connected with described DCDC power electric by this DCDC multidiameter option switch, and this DCDC multiple-channel output DAC is for arranging the output voltage of described DCDC power supply.
Implantable nerve stimulating system described above, wherein, described low order generator comprises: a low order multidiameter option switch, a low order multiple-channel output DAC, a low order generation metal-oxide-semiconductor; Described low order multiple-channel output DAC is electrically connected with described low order multidiameter option switch, described central controller and described threshold voltage vt reference circuit respectively, and it is for receiving the digital signal of described central controller and being converted to plurality of voltages analog signal output by after its accumulation threshold voltage Vt; Described low order multidiameter option switch is electrically connected with described low order multiple-channel output DAC, central controller and low order generation metal-oxide-semiconductor respectively, and it is for setting the output current of this low order generator; The drain electrode of described low order generation metal-oxide-semiconductor is electrically connected with described low-voltage follower, source electrode and body end ground connection;
Described high significance bit generator comprises: a high significance bit single channel exports DAC, a high significance bit multi-channel gating switch, a high significance bit generation metal-oxide-semiconductor array; Described high significance bit single channel exports DAC and be electrically connected with described threshold voltage vt reference circuit and high significance bit multi-channel gating switch respectively, and it is for a corresponding fixing output valve and will be converted to the output of single channel voltage analog signal after its accumulation threshold voltage Vt; Described high significance bit multi-channel gating switch exports DAC with described central controller and high significance bit single channel and is electrically connected, and it is for setting the output current of this high significance bit generator; The drain electrode of described high significance bit generation metal-oxide-semiconductor array is electrically connected with described low-voltage follower, source electrode and body end ground connection;
The circuit that described threshold voltage vt reference circuit is used for consist of in conjunction with metal-oxide-semiconductor sheet internal resistance obtains and the threshold voltage vt of particular type metal-oxide-semiconductor under output current process in real time;
Described low reference voltage is connected with described low-voltage follower, and it is for providing a reference voltage to described low-voltage follower;
Described low-voltage follower comprises a low-voltage follower output mos pipe and an operational amplifier be connected with described low-voltage follower output mos pipe; The drain electrode of this low-voltage follower output mos pipe is connected with described channel selector switch array electric, and source electrode is electrically connected with the drain electrode of described low order generation metal-oxide-semiconductor and high significance bit generation metal-oxide-semiconductor array; Described operational amplifier is connected with described low reference voltage; Described low-voltage follower is for setting the output voltage of this low order generator and this high significance bit generator.
Implantable nerve stimulating system described above, wherein, the method that the pulse constant current of described pulse generator exports comprises the following steps:
Step S10, starts an impulse stimulation cycle, and the high significance bit of setting forward stimulating current Ip and low order also export and control this forward stimulating current output pulse width Tp, and described storage capacitor array starts electric discharge, and system enters forward stimulates state;
Step S11, stops forward stimulating state, and the high significance bit of setting negative sense stimulating current In and low order also export, and control this negative sense stimulating current output pulse width Tn, wherein Ip*Tp=In*Tn, described storage capacitor array starts electric discharge, and system enters negative sense stimulates state;
Step S12, stops negative sense stimulating state, described storage capacitor array charging, and system enters charged state;
Step S13, judges that whether described electric current output feedack is abnormal, if so, enters step S14, if not, then enter step S15;
Step S14, processes above-mentioned abnormal conditions, enters step S15 after terminating;
Step S15, judges whether to meet short circuit discharging condition, if so, enters step S16, if not, then enter step S17;
Step S16, short circuit discharges, and enters step S17 after terminating;
Step S17, judges the stimulation of above-mentioned forward, negative sense stimulation and the time of charging and whether equals an electric pulse stimulation cycle T, if so, entering step S18, if not, then return step S12; And
Step S18, described storage capacitor array stops charging, terminates this impulse stimulation cycle and returns step S10.
Implantable nerve stimulating system described above, wherein, described step S10 specifically comprises: set every road electric current by described central controller by described low order multiple-channel output DAC and export corresponding low order output, by described channel selector switch array, forward gate is carried out to described contact array, inputted by the low order of described low order multidiameter option switch forward stimulating current Ip that real-time selection is corresponding from above multiple electric current output parameter, and start forward by the high significance bit that described high significance bit multi-channel gating switch sets this forward stimulating current Ip and stimulate, and control forward stimulating current output pulse width Tp by described central controller by described low order multidiameter option switch and described high significance bit multi-channel gating switch, then, select variable connector to select electric capacity corresponding in described storage capacitor array by described central controller by described storage capacitor, and the switch that described in gating, channel selector switch array is corresponding, described contact array is discharged,
Described step S11 specifically comprises: stop forward stimulating by described central controller by described low order multidiameter option switch and described high significance bit multi-channel gating switch, by described channel selector switch array, negative sense gating is carried out to described contact array, to be stimulated by negative sense the high significance bit of described high significance bit multi-channel gating switch setting negative sense stimulating current In by the low order of described low order multidiameter option switch negative sense stimulating current In that real-time selection is corresponding from above multiple electric current output parameter input, this negative sense stimulating current output pulse width Tn is controlled by described low order multidiameter option switch and described high significance bit multi-channel gating switch by described central controller, and this negative sense stimulating current is less than or equal to this forward stimulating current, then, variable connector is selected to select electric capacity corresponding in described storage capacitor array by described central controller by described storage capacitor, and the switch that described in gating, channel selector switch array is corresponding, described contact array is discharged, wherein, discharge current direction and forward stimulate state contrary,
Described step S12 specifically comprises: disconnect described channel selector switch array by described central controller, control described low order multidiameter option switch and the stimulation of described high significance bit multi-channel gating switch stopping negative sense, and control the output voltage that described DCDC multiple-channel output DAC and described DCDC multidiameter option switch arrange described DCDC power supply, and the variable connector electric capacity corresponding to described storage capacitor array is selected to charge by described storage capacitor;
Described step S13 specifically comprises: when the output current that the voltage on the corresponding electric capacity of described storage capacitor array cannot support described mixed type high accuracy DAC correspondence to arrange, the signal that described low-voltage follower is delivered to described electric current output feedack will touch the logic level of high potential, be judged as exception; When the output current that the voltage on the corresponding electric capacity of described storage capacitor array can support described mixed type high accuracy DAC correspondence to arrange, be judged as normal;
Described step S14 specifically comprises: improve the setting value of DAC corresponding to described DCDC multiple-channel output DAC to improve described DCDC power supply output valve, or reduces the setting value of output current when the setting value of the corresponding DAC of described DCDC multiple-channel output DAC reaches maximum.
Implantable nerve stimulating system described above, wherein, the method for the output pulse constant current of described pulse generator is further comprising the steps:
Step S20, provides an output voltage Vs by described storage capacitor array by described storage capacitor multidiameter option switch;
Step S21, provides the reference voltage Vr of certain current potential between 0.1 ~ 0.4V by described low reference voltage, set pulse constant current output voltage tolerance limit as (Vs-Vr) with this;
Step S22, sets the output current Ilsb of described low order generator;
Step S23, sets the current output value Imsb of described high significance bit generator; And
Step S24, setting described mixed type high accuracy DAC output current is Ilsb and Imsb sum.
Implantable nerve stimulating system described above, wherein, described step S21 specifically comprises: the outfan being delivered to described low order generator and described high significance bit generator by described low-voltage follower by described low-voltage follower output mos pipe, determines described low order generator and the described high input signal of significance bit generator and the relation of output current thus;
Described step S22 specifically comprises: described low order multiple-channel output DAC receives the setting value of this central controller, set every road electric current respectively and export corresponding low order input value, wherein, this low order multiple-channel output DAC output valve is that above low order input value adds the threshold voltage vt that threshold voltage vt reference circuit exports, and from above low order multiple-channel output DAC output valve, select a corresponding road to act on this low order generation metal-oxide-semiconductor by this central controller by this low order multidiameter option switch, thus finally set the output current Ilsb of this low order generator,
Described step S23 specifically comprises: described high significance bit single channel exports threshold voltage vt that maximum set value that DAC exports this low order multiple-channel output DAC all the time adds that this threshold voltage vt reference circuit the exports gating reference voltage as this high significance bit generation metal-oxide-semiconductor array, and by this high significance bit multi-channel gating switch, corresponding gating is carried out to this high significance bit generation metal-oxide-semiconductor array by this central controller, thus set the output current Imsb of this high significance bit generator further.
Implantable nerve stimulating system described above, wherein, in described step S23, what the setting value from this central controller that this low order multiple-channel output DAC receives was through this central controller process considers this low order generation metal-oxide-semiconductor input voltage and the nonlinear setting correction value of output current, the linear relationship that the setting correction value that this central processing unit exports makes the output current of this low order generation metal-oxide-semiconductor and the linear output current of expectation present error to be less than 1/2 minimum resolution.
Implantable nerve stimulating system described above, wherein, described shell is a biocompatible metal shell, uses as an electrode contacts when electricity irritation; Described channel selector switch array is electrically connected with described shell, and possesses the function of the earthing of casing of the contact array of described stimulating electrode and described pulse generator.
Implantable nerve stimulating system described above, wherein, further, the wire that definition connects described DCDC power supply and described channel selector switch array is one first wire, the wire that definition connects described low-voltage follower and described channel selector switch array is one second wire, between this first wire and second wire, arrange a discharge switch, described discharge switch is used for described contact array and the electric discharge of described shell short circuit.
Implantable nerve stimulating system described above, wherein, comprises one further for connecting the extension lead of this stimulating electrode and this pulse generator.
Compared with prior art, constant current implantable nerve stimulating system of the present invention, can provide the pulse constant current of multichannel implantable nerve stimulating system to export, have active charge balancing function.From the demand of the energy efficiency of constant current output implantable nerve stimulating system, high accuracy, safety, small size, native system possesses following functions characteristic and advantage: the first, and the pulse constant current of described system exports the high output voltage margin characteristic possessed and provides high energy validity; The second, by low level with high-order adopt the mixed type high accuracy DAC of different control modes thus control with the real-time high-precision that less chip area and lower dynamic power consumption realize output current; 3rd, this high-precision characteristic significantly improves security of system performance under active charge balancing stimulation mode, greatly reduces neural tissue injury in conjunction with current control mode; 4th, the system that its central controller is dominated possesses real-time, that intelligence degree is high characteristic; 5th, have benefited from the characteristic of system design and active charge balancing, except storage capacitor array, shell, other parts all embody in the mode of chip on chip components, and system bulk is little, are applicable to the characteristic that implantable medical device volume is limited.
Accompanying drawing explanation
The structural representation of the implantable nerve stimulating system that Fig. 1 provides for the embodiment of the present invention.
Fig. 2 is the circuit block diagram of the pulse generator of the implantable nerve stimulating system of Fig. 1.
The method of work flow chart of the pulse constant current output of the pulse generator of the implantable nerve stimulating system that Fig. 3 provides for one embodiment of the invention.
The pulse generator of the implantable nerve stimulating system that Fig. 4 provides for one embodiment of the invention realizes the method for work flow chart of high output voltage margin characteristic.
Main element symbol description
| Implanted lesions located in deep brain device | 10 | Pulse generator | 11 |
| Central controller | 111 | DCDC power supply | 112 |
| Mixed type high accuracy DAC | 113 | Low order generator | 1131 |
| Low order multidiameter option switch | 11311 | Low order multiple-channel output DAC | 11312 |
| Low order generation metal-oxide-semiconductor | 11313 | High significance bit generator | 1132 |
| High significance bit generation metal-oxide-semiconductor array | 11321 | High significance bit multi-channel gating switch | 11322 |
| High significance bit single channel exports DAC | 11323 | Threshold voltage vt reference circuit | 1133 |
| Low reference voltage | 1134 | Low-voltage follower | 1135 |
| Low-voltage follower output mos pipe | 11351 | Operational amplifier | 11352 |
| Electric current output feedack | 114 | DCDC multiple-channel output DAC | 115 |
| DCDC multidiameter option switch | 116 | Storage capacitor selects variable connector | 117 |
| Storage capacitor array | 118 | High voltage selection circuit | 119 |
| Discharge switch | 1110 | Channel selector switch array | 1111 |
| Shell | 1112 | Stimulating electrode | 12 |
| Contact array | 120 | Extension lead | 13 |
| Vitro program controlled instrument | 14 |
Following detailed description of the invention will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
Below in conjunction with the accompanying drawings and the specific embodiments, implantable nerve stimulating system provided by the invention and method of work thereof are described.Described implantable nerve stimulating system and method for work thereof can realize high output voltage margin characteristic and output off current HIGH precision controlling.
Be appreciated that implantable nerve stimulating system provided by the invention can be implanted brain depth stimulator, implanted spinal stimulator, implanted vagus nerve stimulator.The embodiment of the present invention is only described for implanted lesions located in deep brain device.
Refer to Fig. 1, the embodiment of the present invention provides an implanted lesions located in deep brain device 10, it comprises: one implants subcutaneous pulse generator 11, the stimulating electrode 12 of the one dark brain position of implantation, one extension lead 13 connecting this stimulating electrode 12 and pulse generator 11, and one for the vitro program controlled instrument 14 of this pulse generator 11 program control.
Described pulse generator 11 produces specific electric stimulation pulse signal, and carries out stimulation regulation and control by described extension lead 13 and stimulating electrode 12 conducting to stimulation location.Described vitro program controlled instrument 14 can with the wireless connections of described pulse generator 11, and change its electric pulse stimulation parameter.
Please with further reference to Fig. 2, described stimulating electrode 12 tip has a contact array 120, and it comprises multiple contact, is labeled as contact 1 respectively, contact 2 ... and contact N.After stimulating electrode 12 is implanted target position, have at least a contact to contact closely with stimulation target spot, so that suitable electricity irritation is conducted to target spot, treat the disease of neural class.Be appreciated that the number of described stimulating electrode 12 is not limited to one, can select as required, corresponding position is stimulated, to ensure effect of stimulation.
Be appreciated that described extension lead 13 is a selectable unit, described stimulating electrode 12 can be directly connected on this pulse generator 11.Only have when the distance after described stimulating electrode 12 implants with this pulse generator 11 is larger, just need to be connected by extension lead 13.
Refer to Fig. 2, the circuit of described pulse generator 11 comprises: central controller 111, DC-DC (DCDC) power supply 112, mixed type high precision digital-to-analog converter (DAC) 113, electric current output feedack 114, DCDC multiple-channel output DAC115, DCDC multidiameter option switch 116, storage capacitor select variable connector 117, storage capacitor array 118, high voltage selection circuit 119, discharge switch 1110, channel selector switch array 1111 and a shell 1112 etc.
Described central controller 111 controls modules and the element co-ordination of whole pulse generator 11.Described central controller 111 selects variable connector 117, discharge switch 110 and channel selector switch array 1111 to be electrically connected with described DCDC power supply 112, mixed type high accuracy DAC113, electric current output feedack 114, DCDC multiple-channel output DAC115, DCDC multidiameter option switch 116, storage capacitor respectively, and for controlling its work.
Described DCDC power supply 112 is for providing electric energy for the circuit of described pulse generator 11, and its output voltage is 0V-24V.Described DCDC power supply 112 selects variable connector 117 to be electrically connected with described storage capacitor array 118 by described storage capacitor, and for charging to described storage capacitor array 118.Described storage capacitor array 118 is electrically connected with described channel selector switch array 1111 by described high voltage selection circuit 119, and provides electric pulse stimulation by this channel selector switch array 1111 to the contact array 120 of described stimulating electrode.
Described mixed type high accuracy DAC113, its inside comprises: low order generator 1131, high significance bit generator 1132, threshold voltage vt reference circuit 1133, low reference voltage 1134 and a low-voltage follower 1135.Described mixed type high accuracy DAC113 can be inputted by the digital quantity receiving central controller 111 and be exported the size of current of high-precision correspondence, and this electric current is exported situation, namely can fan-out capability support the output of this electric current, informs central controller 111 in real time by electric current output feedack 114.
Described low order generator 1131, its inside comprises: low order multidiameter option switch 11311, low order multiple-channel output DAC11312, a low order generation metal-oxide-semiconductor 11313.Described low order multiple-channel output DAC11312 is electrically connected with described low order multidiameter option switch 11311, described central controller 111 and described threshold voltage vt reference circuit 1133 respectively.Described low order multiple-channel output DAC11312 receives the digital signal of described central controller 111 and is converted to plurality of voltages analog signal output by after its accumulation threshold voltage Vt.Described low order multidiameter option switch 11311 is electrically connected with described low order multiple-channel output DAC11312, described central controller 111 and low order generation metal-oxide-semiconductor 11313 respectively.The control signal that described low order multidiameter option switch 11311 receives central controller 111 optionally by the output action of the low order multiple-channel output DAC11312 on a certain road in low order generation metal-oxide-semiconductor 11313, thus the output current of setting low order generator 1131.The drain electrode of described low order generation metal-oxide-semiconductor 11313 is electrically connected with described low-voltage follower 1135, source electrode and body end ground connection.
Described high significance bit generator 1132, its inside comprises: a high significance bit single channel exports DAC11323, the high significance bit generation metal-oxide-semiconductor array 11321 of a high significance bit multi-channel gating switch 11322.Described high significance bit single channel exports DAC11323 and is electrically connected with described threshold voltage vt reference circuit 1133 and high significance bit multi-channel gating switch 11322 respectively.Described high significance bit single channel exports the corresponding fixing output valve of DAC11323 and exports being converted to single channel voltage analog signal after its accumulation threshold voltage Vt.Described high significance bit multi-channel gating switch 11322 exports DAC11323 with described central controller 111 and high significance bit single channel and is electrically connected.Described in described high significance bit multi-channel gating switch 11322 receives, high significance bit single channel is optionally exported the output action of DAC11323 in high significance bit generation metal-oxide-semiconductor array 11321 by the control signal of central controller 111, thus sets the output current of high significance bit generator 1132.Described high significance bit generation metal-oxide-semiconductor array 11321 adopts thermometer-code coded system, and bears the decoding function of binary code to thermometer-code by high significance bit multi-channel gating switch 11322.The drain electrode of described high significance bit generation metal-oxide-semiconductor array 11321 is electrically connected with described low-voltage follower 1135, source electrode and body end ground connection.
Described threshold voltage vt reference circuit 1133, its function comprises: the circuit consisted of in conjunction with metal-oxide-semiconductor sheet internal resistance obtains and the threshold voltage vt of particular type metal-oxide-semiconductor under exporting current process in real time.
Described low reference voltage 1134 is connected with described low-voltage follower 1135, and it is for providing a reference voltage to described low-voltage follower 1135.
Described low-voltage follower 1135 comprises a low-voltage follower output mos pipe 11351 and an operational amplifier 11352 be connected with described low-voltage follower output mos pipe 11351.The drain electrode of this low-voltage follower output mos pipe 11351 is electrically connected with described discharge switch 1110 and channel selector switch array 1111 respectively, and source electrode is electrically connected with the drain electrode of described low order generation metal-oxide-semiconductor 11313 and high significance bit generation metal-oxide-semiconductor array 11321.Described operational amplifier 11352 is also connected with described low reference voltage 1134.Described low-voltage follower 1135 receives the output signal of this low reference voltage 1134 by this operational amplifier 11352, the voltage follow function possessing high fan-out capability is realized by this low-voltage follower output mos pipe 11351, the output signal of this low reference voltage 1134 is passed to the drain electrode of this low-voltage follower output mos pipe 11351, thus sets the output voltage of this low order generator 1131 and this high significance bit generator 1132.
Described electric current output feedack 114 is electrically connected with described central controller 111, DCDC multiple-channel output DAC115 and low-voltage follower output mos pipe 11351 respectively.Described electric current output feedack 114 exports situation for the electric current received from described mixed type high accuracy DAC113 and informs this central controller 111 in real time.
Described DCDC multiple-channel output DAC115 is electrically connected with described central controller 111 and described electric current output feedack 114 respectively, and be electrically connected with described DCDC power supply 112 by this DCDC multidiameter option switch 116, this DCDC multiple-channel output DAC115 is for arranging the output voltage of described DCDC power supply 112.
Described storage capacitor selects variable connector 117 to entreat controller 111, described DCDC power supply 112, described storage capacitor array 118 and described high voltage selection circuit 119 to be electrically connected with described stating respectively.Particularly, described storage capacitor selects variable connector 117 to comprise multiple switch, and each switch is electrically connected with described storage capacitor array 118 and described high voltage selection circuit 119 respectively.Described storage capacitor array 118 ground connection, thus make described storage capacitor select the capacity earth of each switch by described storage capacitor array 118 of variable connector 117.Described high voltage selection circuit 119 is electrically connected with described channel selector switch array 1111.
Further, it is one first wire with the wire of described channel selector switch array 1111 that definition connects described DCDC power supply 112, it is one second wire with the wire of described channel selector switch array 1111 that definition connects described low-voltage follower 1135, arranges a discharge switch 1110 between this first wire and second wire.Described discharge switch 1110 is electrically connected with described central controller 111.Described discharge switch 1110 can coordinate with described channel selector switch array 1111, carries out short circuit electric discharge to described contact array 120 and shell 1112.Be appreciated that described discharge switch 1110 is an alternate configurations.
Described channel selector switch array 1111 is electrically connected with described central controller 111, contact array 120 and shell 1112 respectively.Described channel selector switch array 1111 can be selected, by some in contact array 120 and shell 1112 of the energy delivery from described high voltage selection circuit 119 and described low-voltage follower 1135, to carry out electric pulse stimulation to tissue.Further, described channel selector switch array 1111 is ground connection also, and possess the function by contact array 120 and shell 1112 ground connection.
Described shell 1112 is a biocompatible metal shell, can use when electricity irritation as an electrode contacts.In the present embodiment, described shell 1112 is a titanium shell.
Described vitro program controlled instrument 14 is undertaken by the modes such as display screen, display lamp, buzzer, button and user alternately.Described vitro program controlled instrument 14 comprises a wireless communication module, its for described pulse generator 11 radio communication.This communication can be radio communication or near-field coupling communication etc.Wherein, the communication band of Radio-Frequency Wireless Communication device comprises 401MHz-406MHz, 420-445MHz, 2.3GHz-2.5GHz.The wearing body communication distance and can reach 1m or more of described vitro program controlled instrument 14 and described pulse generator 11.
Refer to Fig. 3, the method that the pulse constant current that described pulse generator 11 realizes high accuracy active charge balancing function exports comprises the following steps:
Step S10, start an impulse stimulation cycle, set the high significance bit of this forward stimulating current Ip and low order and export and control this forward stimulating current output pulse width Tp, described storage capacitor array 118 starts electric discharge, and system enters forward stimulates state.Particularly, in this step, set every road electric current by described central controller 111 by described low order multiple-channel output DAC11312 and export corresponding low order output, by described channel selector switch array 1111, forward gate is carried out to described contact array 120 and described shell 1112, inputted by the low order of described low order multidiameter option switch 11311 forward stimulating current Ip that real-time selection is corresponding from above multiple electric current output parameter, and start forward by the high significance bit that described high significance bit multi-channel gating switch 11322 sets this forward stimulating current Ip and stimulate, and control forward stimulating current output pulse width Tp by described central controller 111 by described low order multidiameter option switch 11311 and described high significance bit multi-channel gating switch 11322.Then, variable connector 117 is selected to select electric capacity corresponding in described storage capacitor array 118 by described central controller 111 by described storage capacitor, and the switch that described in gating, channel selector switch array 1111 is corresponding, described contact array 120 and described shell 1112 are discharged.
Step S11, stops forward stimulating state, sets the high significance bit of this negative sense stimulating current In and low order and exports, and control this negative sense stimulating current output pulse width Tn, wherein Ip*Tp=In*Tn, described storage capacitor array 118 starts electric discharge, and system enters negative sense stimulates state.Particularly, in this step, forward is stopped to stimulate by described central controller 111 by described low order multidiameter option switch 11311 and described high significance bit multi-channel gating switch 11322, by described channel selector switch array 1111, negative sense gating is carried out to described contact array 120 and described shell 1112, inputted by the low order of described low order multidiameter option switch 11311 negative sense stimulating current In that real-time selection is corresponding from multiple electric current output parameters of above low order multiple-channel output DAC11312 and negative sense stimulation setting the high significance bit of negative sense stimulating current In by described high significance bit multi-channel gating switch 11322, this negative sense stimulating current output pulse width Tn is controlled by described low order multidiameter option switch 11311 and described high significance bit multi-channel gating switch 11322 by described central controller 111, wherein Ip*Tp=In*Tn, and this negative sense stimulating current is less than or equal to this forward stimulating current.Then, variable connector 117 is selected to select electric capacity corresponding in described storage capacitor array 118 by described central controller 111 by described storage capacitor, and the switch that described in gating, channel selector switch array 1111 is corresponding, described contact array 120 and described shell 1112 are discharged, wherein, discharge current direction and forward stimulate state contrary.
Step S12, stop negative sense stimulating state, described storage capacitor array 118 charges, and system enters charged state.Particularly, in this step, described channel selector switch array 1111 is disconnected by described central controller 111, control described low order multidiameter option switch 11311 and described high significance bit multi-channel gating switch 11322 stops negative sense stimulating, and control the output voltage that described DCDC multiple-channel output DAC115 and described DCDC multidiameter option switch 116 arrange described DCDC power supply 112, and the electric capacity of variable connector 117 to described storage capacitor array 118 correspondence is selected to charge by described storage capacitor.
Step S13, judges that whether described electric current output feedack 114 is abnormal, if so, enters step S14, if not, then enter step S15.Particularly, in this step, when the output current that the voltage on the corresponding electric capacity of described storage capacitor array 118 cannot support described mixed type high accuracy DAC113 correspondence to arrange, the signal that described low-voltage follower 1135 is delivered to described electric current output feedack 114 will touch the logic level of high potential, be judged as exception.When the output current that the voltage on the corresponding electric capacity of described storage capacitor array 118 can support described mixed type high accuracy DAC113 correspondence to arrange, be judged as normal.
Step S14, described central controller 111 processes above-mentioned abnormal conditions, enters step S15 after terminating.The processing mode of described central controller 111 to above-mentioned abnormal conditions comprises but not only comprises: improve the setting value of DAC corresponding to described DCDC multiple-channel output DAC115 to improve described DCDC power supply 112 output valve, or the setting value of output current is reduced when the setting value of the corresponding DAC of described DCDC multiple-channel output DAC115 reaches maximum, that is, the output current setting value of described low order generator 1131 and the output current setting value of described high significance bit generator 1132 is reduced.
Step S15, judges whether to meet short circuit discharging condition, if so, enters step S16, if not, then enter step S17.Particularly, in this step, the trigger condition of above-mentioned short circuit electric discharge comprises but not only comprises: system reboot, and stimulus parameter is changed, and external function triggers, described storage capacitor array 118 electric voltage exception, or the electric discharge of distance short circuit last time reaches certain time length.Further, its triggered time need be positioned at negative sense stimulate terminate after and before an impulse stimulation cycle T terminates.
Step S16, short circuit discharges, and enters step S17 after terminating.Particularly, in this step, control described low order multidiameter option switch 11311 and described high significance bit multi-channel gating switch 11322 interruptive current output by described central controller 111, and closed described discharge switch 1110 discharges once to described contact array 120 and described shell 1112 short circuit.
Step S17, judges the stimulation of above-mentioned forward, negative sense stimulation and the time of charging and whether equals an electric pulse stimulation cycle T, if so, entering step S18, if not, then return step S12.
Step S18, described storage capacitor array 118 stops charging, terminates this impulse stimulation cycle and returns step S10.
Refer to Fig. 4, the method for the output pulse constant current of described pulse generator 11 is further comprising the steps, thus realizes high output voltage margin characteristic.
Step S20, provides an output voltage Vs by described storage capacitor array 118 by described storage capacitor multidiameter option switch 117.
Step S21, provides the reference voltage Vr of certain current potential between 0.1 ~ 0.4V by described low reference voltage 1134, set pulse constant current output voltage tolerance limit as (Vs-Vr) with this.Particularly, in this step, this reference voltage Vr is delivered to the outfan of described low order generator 1131 and described high significance bit generator 1132 exactly by described low-voltage follower output mos pipe 11351 by described low-voltage follower 1135, the i.e. drain electrode of described low order generation metal-oxide-semiconductor 11313 and described high significance bit generation metal-oxide-semiconductor array 11321, determines described low order generator 1131 and the described high input signal of significance bit generator 1132 and the relation of output current thus.
Step S22, is set the output current Ilsb of described low order generator 1131 by described central controller 111.Particularly, in this step, described low order multiple-channel output DAC11312 receives the setting value of this central controller 111, set every road electric current respectively and export corresponding low order input value, wherein, this low order multiple-channel output DAC11312 output valve is that above low order input value adds the threshold voltage vt that threshold voltage vt reference circuit 1133 exports, and from above low order multiple-channel output DAC11312 output valve, select a corresponding road to act on this low order generation metal-oxide-semiconductor 11313 by this central controller 111 by this low order multidiameter option switch 11311, thus finally set the output current Ilsb of this low order generator 1131.Wherein, what the setting value from this central controller 111 that this low order multiple-channel output DAC11312 receives can be through that this central controller 111 process considers this low order generation metal-oxide-semiconductor 11313 input voltage and the nonlinear setting correction value of output current, the linear relationship that the setting correction value of this central processing unit 111 output can make the output current of this low order generation metal-oxide-semiconductor 11313 and the linear output current of expectation present error to be less than 1/2 minimum resolution.
Step S23, is set the current output value Imsb of described high significance bit generator 1132 by described central controller 111.Particularly, in this step, described high significance bit single channel exports threshold voltage vt that maximum set value that DAC11323 exports this low order multiple-channel output DAC11312 all the time adds that this threshold voltage vt reference circuit 1133 the exports gating reference voltage as this high significance bit generation metal-oxide-semiconductor array 11321, and by this high significance bit multi-channel gating switch 11322, corresponding gating is carried out to this high significance bit generation metal-oxide-semiconductor array 11321 by this central controller 111, thus set the output current Imsb of this high significance bit generator 1132 further.
Step S24, setting described mixed type high accuracy DAC113 output current is Ilsb and Imsb sum.Owing to high-precision output figure place have been split respectively described low order generator 1131 and described high significance bit generator 1132, therefore, the figure place that described low order multiple-channel output DAC11312 and described high significance bit single channel export DAC11323 is also lower, thus possesses lower dynamic power consumption.
Constant current implantable nerve stimulating system of the present invention, can provide the pulse constant current of multichannel implantable nerve stimulating system to export, have active charge balancing function.From the demand of the energy efficiency of constant current output implantable nerve stimulating system, high accuracy, safety, small size, native system possesses following functions characteristic and advantage: the first, and the pulse constant current of described system exports the high output voltage margin characteristic possessed and provides high energy validity; The second, by low level with high-order adopt the mixed type high accuracy DAC of different control modes thus control with the real-time high-precision that less chip area and lower dynamic power consumption realize output current; 3rd, this high-precision characteristic significantly improves security of system performance under active charge balancing stimulation mode, greatly reduces neural tissue injury in conjunction with current control mode; 4th, the system that its central controller is dominated possesses real-time, that intelligence degree is high characteristic; 5th, have benefited from the characteristic of system design and active charge balancing, except storage capacitor array, shell, other parts all embody in the mode of chip on chip components, and system bulk is little, are applicable to the characteristic that implantable medical device volume is limited.
The high precision constant current implantable nerve stimulating system with high output voltage margin characteristic of the present invention, independent of the stimulation object of implantable nerve stimulating system, can be applicable to all kinds of implantable nerve stimulating system.
In addition, those skilled in the art can also do other changes in spirit of the present invention, and these changes done according to the present invention's spirit all should be included in the present invention's scope required for protection.
Claims (10)
1. an implantable nerve stimulating system, it comprises: a pulse generator, a stimulating electrode, and a vitro program controlled instrument; It is characterized in that, described pulse generator comprises: a central controller, a DCDC power supply, a mixed type high accuracy DAC, an electric current output feedack, a DCDC multiple-channel output DAC, a DCDC multidiameter option switch, a storage capacitor select variable connector, a storage capacitor array, a high voltage selection circuit, to accommodate the shell of said elements for the channel selector switch array and be electrically connected with the contact array of described stimulating electrode by this pulse generator;
Described central controller selects variable connector and channel selector switch array electric to be connected with described DCDC power supply, mixed type high accuracy DAC, electric current output feedack, DCDC multiple-channel output DAC, DCDC multidiameter option switch, storage capacitor respectively, and for controlling its work;
Described DCDC power supply selects variable connector to be connected with described storage capacitor array electric by described storage capacitor, and for charging to described storage capacitor array;
Described storage capacitor array is connected with described channel selector switch array electric by described high voltage selection circuit, and provides electric pulse stimulation by this channel selector switch array to the contact array of described stimulating electrode;
Described mixed type high accuracy DAC comprises: a low order generator, a high significance bit generator, a threshold voltage vt reference circuit, a low reference voltage and a low-voltage follower; Described mixed type high accuracy DAC inputs for the digital quantity receiving described central controller and exports corresponding size of current, and this electric current output situation is informed this central controller in real time by this electric current output feedack;
Described electric current output feedack is electrically connected with low-voltage follower output mos pipe, exports situation for the electric current received from described mixed type high accuracy DAC and informs this central controller in real time;
Described DCDC multiple-channel output DAC is electrically connected with described electric current output feedack, and is connected with described DCDC power electric by this DCDC multidiameter option switch, and this DCDC multiple-channel output DAC is for arranging the output voltage of described DCDC power supply.
2. implantable nerve stimulating system as claimed in claim 1, it is characterized in that, described low order generator comprises: a low order multidiameter option switch, a low order multiple-channel output DAC, a low order generation metal-oxide-semiconductor; Described low order multiple-channel output DAC is electrically connected with described low order multidiameter option switch, described central controller and described threshold voltage vt reference circuit respectively, and it is for receiving the digital signal of described central controller and being converted to plurality of voltages analog signal output by after its accumulation threshold voltage Vt; Described low order multidiameter option switch is electrically connected with described low order multiple-channel output DAC, central controller and low order generation metal-oxide-semiconductor respectively, and it is for setting the output current of this low order generator; The drain electrode of described low order generation metal-oxide-semiconductor is electrically connected with described low-voltage follower, source electrode and body end ground connection;
Described high significance bit generator comprises: a high significance bit single channel exports DAC, a high significance bit multi-channel gating switch, a high significance bit generation metal-oxide-semiconductor array; Described high significance bit single channel exports DAC and be electrically connected with described threshold voltage vt reference circuit and high significance bit multi-channel gating switch respectively, and it is for a corresponding fixing output valve and will be converted to the output of single channel voltage analog signal after its accumulation threshold voltage Vt; Described high significance bit multi-channel gating switch exports DAC with described central controller and high significance bit single channel and is electrically connected, and it is for setting the output current of this high significance bit generator; The drain electrode of described high significance bit generation metal-oxide-semiconductor array is electrically connected with described low-voltage follower, source electrode and body end ground connection;
The circuit that described threshold voltage vt reference circuit is used for consist of in conjunction with metal-oxide-semiconductor sheet internal resistance obtains and the threshold voltage vt of particular type metal-oxide-semiconductor under output current process in real time;
Described low reference voltage is connected with described low-voltage follower, and it is for providing a reference voltage to described low-voltage follower;
Described low-voltage follower comprises a low-voltage follower output mos pipe and an operational amplifier be connected with described low-voltage follower output mos pipe; The drain electrode of this low-voltage follower output mos pipe is connected with described channel selector switch array electric respectively, and source electrode is electrically connected with the drain electrode of described low order generation metal-oxide-semiconductor and high significance bit generation metal-oxide-semiconductor array; Described operational amplifier is connected with described low reference voltage; Described low-voltage follower is for setting the output voltage of this low order generator and this high significance bit generator.
3. implantable nerve stimulating system as claimed in claim 2, is characterized in that, the method that the pulse constant current of described pulse generator exports comprises the following steps:
Step S10, starts an impulse stimulation cycle, and the high significance bit of setting forward stimulating current Ip and low order also export and control this forward stimulating current output pulse width Tp, and described storage capacitor array starts electric discharge, and system enters forward stimulates state;
Step S11, stops forward stimulating state, and the high significance bit of setting negative sense stimulating current In and low order also export, and control this negative sense stimulating current output pulse width Tn, wherein Ip*Tp=In*Tn, described storage capacitor array starts electric discharge, and system enters negative sense stimulates state;
Step S12, stops negative sense stimulating state, described storage capacitor array charging, and system enters charged state;
Step S13, judges that whether described electric current output feedack is abnormal, if so, enters step S14, if not, then enter step S15;
Step S14, processes above-mentioned abnormal conditions, enters step S15 after terminating;
Step S15, judges whether to meet short circuit discharging condition, if so, enters step S16, if not, then enter step S17;
Step S16, short circuit discharges, and enters step S17 after terminating;
Step S17, judges the stimulation of above-mentioned forward, negative sense stimulation and the time of charging and whether equals an electric pulse stimulation cycle T, if so, entering step S18, if not, then return step S12; And
Step S18, described storage capacitor array stops charging, terminates this impulse stimulation cycle and returns step S10.
4. implantable nerve stimulating system as claimed in claim 3, it is characterized in that, described step S10 specifically comprises: set every road electric current by described central controller by described low order multiple-channel output DAC and export corresponding low order output, by described channel selector switch array, forward gate is carried out to described contact array, inputted by the low order of described low order multidiameter option switch forward stimulating current Ip that real-time selection is corresponding from above multiple electric current output parameter, and start forward by the high significance bit that described high significance bit multi-channel gating switch sets this forward stimulating current Ip and stimulate, and control forward stimulating current output pulse width Tp by described central controller by described low order multidiameter option switch and described high significance bit multi-channel gating switch, then, select variable connector to select electric capacity corresponding in described storage capacitor array by described central controller by described storage capacitor, and the switch that described in gating, channel selector switch array is corresponding, described contact array is discharged,
Described step S11 specifically comprises: stop forward stimulating by described central controller by described low order multidiameter option switch and described high significance bit multi-channel gating switch, by described channel selector switch array, negative sense gating is carried out to described contact array, to be stimulated by negative sense the high significance bit of described high significance bit multi-channel gating switch setting negative sense stimulating current In by the low order of described low order multidiameter option switch negative sense stimulating current In that real-time selection is corresponding from above multiple electric current output parameter input, this negative sense stimulating current output pulse width Tn is controlled by described low order multidiameter option switch and described high significance bit multi-channel gating switch by described central controller, and this negative sense stimulating current is less than or equal to this forward stimulating current, then, variable connector is selected to select electric capacity corresponding in described storage capacitor array by described central controller by described storage capacitor, and the switch that described in gating, channel selector switch array is corresponding, described contact array is discharged, wherein, discharge current direction and forward stimulate state contrary,
Described step S12 specifically comprises: disconnect described channel selector switch array by described central controller, control described low order multidiameter option switch and the stimulation of described high significance bit multi-channel gating switch stopping negative sense, and control the output voltage that described DCDC multiple-channel output DAC and described DCDC multidiameter option switch arrange described DCDC power supply, and the variable connector electric capacity corresponding to described storage capacitor array is selected to charge by described storage capacitor;
Described step S13 specifically comprises: when the output current that the voltage on the corresponding electric capacity of described storage capacitor array cannot support described mixed type high accuracy DAC correspondence to arrange, the signal that described low-voltage follower is delivered to described electric current output feedack will touch the logic level of high potential, be judged as exception; When the output current that the voltage on the corresponding electric capacity of described storage capacitor array can support described mixed type high accuracy DAC correspondence to arrange, be judged as normal;
Described step S14 specifically comprises: improve the setting value of DAC corresponding to described DCDC multiple-channel output DAC to improve described DCDC power supply output valve, or reduces the setting value of output current when the setting value of the corresponding DAC of described DCDC multiple-channel output DAC reaches maximum.
5. implantable nerve stimulating system as claimed in claim 3, it is characterized in that, the method for the output pulse constant current of described pulse generator is further comprising the steps:
Step S20, provides an output voltage Vs by described storage capacitor array by described storage capacitor multidiameter option switch;
Step S21, provides the reference voltage Vr of certain current potential between 0.1 ~ 0.4V by described low reference voltage, set pulse constant current output voltage tolerance limit as (Vs-Vr) with this;
Step S22, sets the output current Ilsb of described low order generator;
Step S23, sets the current output value Imsb of described high significance bit generator; And
Step S24, setting described mixed type high accuracy DAC output current is Ilsb and Imsb sum.
6. implantable nerve stimulating system as claimed in claim 5, it is characterized in that, described step S21 specifically comprises: the outfan being delivered to described low order generator and described high significance bit generator by described low-voltage follower by described low-voltage follower output mos pipe, determines described low order generator and the described high input signal of significance bit generator and the relation of output current thus;
Described step S22 specifically comprises: described low order multiple-channel output DAC receives the setting value of this central controller, set every road electric current respectively and export corresponding low order input value, wherein, this low order multiple-channel output DAC output valve is that above low order input value adds the threshold voltage vt that threshold voltage vt reference circuit exports, and from above low order multiple-channel output DAC output valve, select a corresponding road to act on this low order generation metal-oxide-semiconductor by this central controller by this low order multidiameter option switch, thus finally set the output current Ilsb of this low order generator,
Described step S23 specifically comprises: described high significance bit single channel exports threshold voltage vt that maximum set value that DAC exports this low order multiple-channel output DAC all the time adds that this threshold voltage vt reference circuit the exports gating reference voltage as this high significance bit generation metal-oxide-semiconductor array, and by this high significance bit multi-channel gating switch, corresponding gating is carried out to this high significance bit generation metal-oxide-semiconductor array by this central controller, thus set the output current Imsb of this high significance bit generator further.
7. implantable nerve stimulating system as claimed in claim 6, it is characterized in that, in described step S23, what the setting value from this central controller that this low order multiple-channel output DAC receives was through this central controller process considers this low order generation metal-oxide-semiconductor input voltage and the nonlinear setting correction value of output current, the linear relationship that the setting correction value that this central processing unit exports makes the output current of this low order generation metal-oxide-semiconductor and the linear output current of expectation present error to be less than 1/2 minimum resolution.
8. implantable nerve stimulating system as claimed in claim 1, it is characterized in that, described shell is a biocompatible metal shell, uses as an electrode contacts when electricity irritation; Described channel selector switch array is electrically connected with described shell, and possesses the function of the earthing of casing of the contact array of described stimulating electrode and described pulse generator.
9. implantable nerve stimulating system as claimed in claim 8, it is characterized in that, further, the wire that definition connects described DCDC power supply and described channel selector switch array is one first wire, the wire that definition connects described low-voltage follower and described channel selector switch array is one second wire, between this first wire and second wire, arrange a discharge switch, described discharge switch is used for described contact array and the electric discharge of described shell short circuit.
10. implantable nerve stimulating system as claimed in claim 1, is characterized in that, comprises one further for connecting the extension lead of this stimulating electrode and this pulse generator.
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