CN104704142A - Plasma treatment device and method for treating at least one substrate - Google Patents
Plasma treatment device and method for treating at least one substrate Download PDFInfo
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- CN104704142A CN104704142A CN201380051002.7A CN201380051002A CN104704142A CN 104704142 A CN104704142 A CN 104704142A CN 201380051002 A CN201380051002 A CN 201380051002A CN 104704142 A CN104704142 A CN 104704142A
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- plasma processing
- processing chambers
- plasma
- internal surface
- vacuum pump
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The present invention relates to a method and a plasma treatment device for treating at least one substrate with: a plasma treatment chamber (12), in which a plasma (14) intended for the treatment of the substrate (1) can be generated; at least one gas inlet (16) opening into the plasma treatment chamber (12) for supplying at least one process gas (15); a vacuum pump device (18), which is in a flow connection with the plasma treatment chamber (12) via a gas outlet (20) and which has an effective suction capability of at least 1500 m3/h per square metre of internal surface of the plasma treatment chamber (12) normalized in relation to molecular nitrogen (N2) and to the internal surface of the plasma treatment chamber (12) in a pressure range between 2 Pa and 50 Pa.
Description
Invention field
The present invention relates to a kind of plasma processing apparatus for the treatment of at least one piece of substrate and the correlation method for this substrate of Cement Composite Treated by Plasma.
Prior art
For the plasma enhanced process of substrate, be known by prior art especially for the etching of substrate surface and/or the equipment of coating and method.Be such as even application thin layer as far as possible on substrate, wherein can use chemical Vapor deposition process, particularly the chemical Vapor deposition process of plasma enhancing, i.e. so-called PECVD method.One or more substrate is configured in plasma processing chambers set in vacuum chamber for this reason, under the pressure range keeping regulation and humidity range, at least one reaction gas or the gaseous mixture set by each technique is imported in plasma processing chambers.This gas is made to be in plasma state at least partly by the electromagnetic energy of suitable input electromagnetic energy as high-frequency range or radio frequency (RF) scope.
For producing and maintaining the plasma body for Substrate treatment, the electrode being configured in vacuum chamber or plasma processing chambers inside can be provided.But this plasma generation also can realize based on one or more coil that plasma processing chambers is outside or vacuum chamber is outside as being configured in, by this coil, for cause and the energy maintained needed for this diversion daughter can be coupled in plasma processing chambers in proximity.
Particularly such as can be used for preparing in the substrate coating process of solar cell, display device or semiconducter junction component, saving and economic cause for process, be worth pursuing, will effectively utilize produced plasma body as much as possible.Except even as far as possible and high quality apply except this substrate, the economy of this coating process plays an important role.Therefore be worth pursuing, with under time short as far as possible and Bao Te shorter cycling time, realize substrate application rate high as far as possible.
Such as US 5683548 describes a kind of coating method can implemented by means of plasma body inductively, wherein this all gas flow is 40-200 standard cubic centimeter/point (sccm), and will be used for providing the vacuum system of pressure process to be adjusted to 1-10 milli torr (0.013-0.13Pa).The high frequency power of 0.1-5kW is coupled in RF coil to produce plasma body.
The application rate of 1nm/s at the most can be realized with this processing parameter.But prepare coated substrates in order to competitive, much higher application rate need be reached.
Such as, describe the coating method of the siliceous dielectric layer of the chemical vapor deposition chamber (chemical vapor deposition (CVD)) using microwave to strengthen in US 2012/0171391 A1.Wherein advise, according to the size adjustment flow of pending substrate.When substrate has from about 730mm to 920mm area, for SiH
4and NH
3coating silicon nitride layer, can provide SiH under the flow rate of about 150sccm/L to about 3000sccm/L
4gas flow.Operation pressure in this chamber can be 50-250 milli torr (about 0.6-3.3Pa).
By means of this method, should availablely divide above application rate to produce silicon nitride layer higher than 250nm/, and the ununiformity of thickness be less than 14%.
But this thickness changes substrate mostly to be manufactured as underproof only not for substrate used for solar batteries.
Summary of the invention
Therefore, the object of the invention is to, a kind of plasma processing apparatus and correlation method of the improvement for the treatment of at least one piece of substrate is provided, high-quality Substrate treatment can be realized whereby, particularly can realize substrate coating when high application rate.In addition, this plasma body produced also should can be used for surface treatment as far as possible effectively, especially for the coating of substrate.
The plasma processing apparatus of this object by claim 1 and the method realization being configured in the substrate of plasma processing chambers inside for the treatment of at least one by claim 14, wherein, favourable scheme is respectively listed in dependent claims.
This plasma processing apparatus provided be for for the treatment of, especially for coating at least one piece of substrate and forming.This plasma processing apparatus has plasma processing chambers for this reason, can produce the plasma body for this substrate of process in this chamber.At least one inlet mouth passes in this plasma processing chambers, for importing at least one process gas, and preferred gas mixture.In addition, also provide at least one vacuum pump apparatus, it is connected in flowing with this plasma processing chambers through air outlet.Can produce the stress level of regulation in this plasma processing chambers by means of vacuum pump apparatus, wherein this process gas or gaseous mixture are corresponding controlled or adjustable through the influx of inlet mouth.
In this setting, this vacuum pump apparatus presses dinitrogen (N in the pressure range of 2-50Pa
2) meter and stdn (normierte) is at least 1500m to effective suction capactity of the internal surface of this plasma processing chambers
3/ h every square metre plasma processing chambers internal surface.This vacuum pump apparatus at least has the suction capactity of defined in the pressure range of 2-20Pa simultaneously.
By means of this limited with dynamical vacuum pump apparatus, the gas flow or the gas throughput that are conducive to coated technique can be realized in plasma processing chambers.At this, this vacuum pump apparatus can at 2-50Pa, within the scope of the total pressure of at least 2-20Pa, provides 1500m
3the given standardized minimum suction capactity of/h.In each pressure range of the pressure range of given 2-50Pa, as 5-20Pa, particularly in 10-15Pa and 15-20Pa, this effective suction capactity also can obviously be in higher than this value.
By effective suction capactity of defined, at 2-50Pa, in the pressure range of at least 2-20Pa, can realize being greater than 3 standard liters (slm), be preferably greater than the gas flow that 4 standards rise, in elevated pressures as under 15-20Pa, the gas flow being greater than 7.5slm, 10slm, 12slm or being even greater than 15slm also can be realized.At this, this representation and per minute standard liter (slm) are namely synonymous to per minute 1000 standard cubic centimeter (sccm), are measuring of per minute and the molecular amounts namely flowing through given cross section in standard conditions under 1013hPa.
At this, the gas flow that standard rises is corresponding to about 6000m
3the volumetric flow rate of Pa/h.
By producing given gas flow in plasma processing chambers, except suitable select vacuum pump apparatus except, the geometric configuration of this plasma processing chambers and its gas-guiding structure also very important.
Also show at this, effective suction capactity that the internal surface of the direct plasma body towards producing of this plasma processing chambers should be relevant to this vacuum pump apparatus is determined.Except pending substrate, also having the internal surface of plasma processing chambers to be also similar to this substrate will inevitably stand surface treatment process.When other processing parameter is constant, the increase of the internal surface of such as this plasma processing chambers can cause the application rate as substrate can be surveyed significantly to reduce, because the total surface be made up of substrate and plasma processing chambers internal surface becomes large.
In less total internal surface situation of this plasma processing chambers, this plasma-treating technology can more effectively carry out.But here want it is considered that, the Geometrical change of this plasma processing chambers also incidentally can produce the phase strain ratio of its flow guide dynamic characteristic simultaneously, thus can damage or affect effective suction capactity of this vacuum pump apparatus.
In this respect, about data normalized 1 square metre of (m to this plasma processing chambers of the suction capactity of this vacuum pump apparatus, nearly all data of its effective suction capactity and the flow technique transmission value about gas-guiding structure
2) internal surface.Therefore, the parameter mentioned by the transmission value of suction capactity and flow technique such as has 2m
2the factor 2 to be multiplied by the plasma processing chambers of internal surface, will divided by the corresponding factor in corresponding undersized plasma processing chambers.
In a preferred version, do not adopt the way of the internal surface being normalized into this plasma processing chambers, but can be normalized into the total area of substrate to be applied in treating chamber yet.Do not adopt the way of square metre internal surface being normalized into plasma processing chambers, but also can by 0.1m
2total substrate surface carry out stdn.Therefore, this vacuum pump apparatus is at 2-50Pa, and at least within the scope of 2-20Pa, by dinitrogen and the stdn of pending substrate total surface, effective suction capactity is at least 1500m
3the every 0.1m of/h
2substrate surface to be applied.
In the present invention, effective suction capactity of this vacuum pump apparatus means the suction capactity that can effectively be applied this plasma processing chambers by pumping unit.Because this vacuum pump apparatus or indirectly as being connected on shell by corresponding guide pipeline, or be directly connected on shell, as being connected on the vacuum chamber of this plasma processing chambers of encapsulating, so based on the guide pipeline provided between plasma processing chambers and vacuum pump apparatus, particularly in the pressure range of set 2-50Pa and the pressure range at 2-20Pa, be bound to produce significant power loss and the pressure-losses.
In this respect, mutually adjust vacuum pump apparatus and plasma processing chambers or encapsulate the vacuum chamber of this plasma processing chambers, so that the effective suction capactity needed for this plasma processing chambers region can be provided under the whole air feed considered between plasma processing chambers and empty pumping unit or gas-guiding structure.
By first advantageous scheme, described effective suction capactity of this vacuum pump apparatus is by the suction capactity of this vacuum pump apparatus itself and drawn by the transmission value of the flow technique of whole gas-guiding structure, this whole gas-guiding structure is in the downstream of this plasma processing chambers and the upstream of this vacuum pump apparatus, is therefore between vacuum pump apparatus and plasma body to be generated.
In the pressure range of 2-50Pa or the pressure range of 2-20Pa of setting, import the process gas of this plasma processing chambers or precursor gases or corresponding gaseous mixture, no longer be in the flow characteristics state of absolute pure molecule, under the flow characteristics state of absolute pure molecule, the transmission value of this steam line or structure can show with pressure irrelevant.In fact, the pressure range required to this, existed main in stratiform or the flow characteristics of turbulent flow, under this characteristic, the transmission value of this gas-guiding structure shows and pressure correlation.
Particularly in hypergeometric, example increases the transmission value of pipe class or other gas-guiding structures under elevated pressure.At plasma processing chambers and/or under encapsulating the vacuum chamber of this plasma processing chambers and the given geometric configuration situation of all provided gas-guiding structures wherein, can under the pressure of setting, as this is positioned at the transmission value of the gas-guiding structure in plasma processing chambers downstream with computer aided calculation, and measure this effective suction capactity with it under the known suction capactity providing this vacuum pump apparatus.
By another program, this vacuum pump apparatus in the pressure range of 2-50Pa, but presses dinitrogen (N at least in the pressure range of 2-20Pa
2) meter and the effective suction capactity being normalized into the internal surface of this plasma processing chambers be at least 3000m
3/ h, 4000m
3/ h, 4500m
3/ h, 5000m
3/ h or 5500m
3/ h, each all by the internal surface of every square metre of plasma processing chambers.
With so high effective suction capactity, final attainable gas flow or volumetric flow of gas are for being greater than 3slm, particularly > 3.5slm, > 5slm, > 7.5slm, > 10slm, > 12.5slm or even > 15slm.At this, as the larger gas flow higher than 3.5slm, particularly can realize in the pressure range of at least 5Pa, 7.5Pa, 15Pa, 20Pa or 50Pa.
In this respect, by another preferred version be setting, this vacuum pump apparatus higher than 5Pa and/or higher than in the pressure range of 10Pa, by dinitrogen (N
2) meter and the effective suction capactity being normalized into the internal surface of this plasma processing chambers is at least 3000m
3/ h, 4000m
3/ h, 4500m
3/ h, 5000m
3/ h or 5500m
3/ h, each all by the internal surface of every square metre of plasma processing chambers.
Also can set by another preferred version, the total transmission value that be normalized into the internal surface of this plasma processing chambers of the gas-guiding structure provided in the downstream of this plasma processing chambers and the upstream of this vacuum pump apparatus under 2Pa pressure is at least 2000m
3/ h, 3000m
3/ h, 4000m
3/ h, 5000m
3/ h or 6000m
3/ h, each all by the internal surface of every square metre of plasma processing chambers.
By another preferred version, this vacuum pump apparatus has rocker-type piston pump, and the suction capactity that be normalized into the internal surface of this plasma processing chambers of this pump under 2Pa pressure is at least 2000m
3/ h, 3000m
3/ h, 4000m
3/ h, 5000m
3/ h or at least 6000m
3/ h, each all by the internal surface of every square metre of plasma processing chambers.If this plasma processing chambers has 0.5m
2internal surface, then suction capactity given here will divided by the factor 2.At this plasma processing chambers, there is about 2m
2internal surface situation under, the rocker-type piston pump with the suction capactity being multiplied by the factor 2 be provided, i.e. so-called Roots's mechanical booster pump.
Applying at least one rocker-type piston pump to show, is favourable to providing higher by the gas flow of this plasma processing chambers.Thus, rocker-type piston pump is higher than 1Pa or higher than the suction capactity in the pressure range of 2Pa with approximately constant.
Other pump housing system, as turbomolecular pump (Turbomolekularpumpen), in other pressure ranges, particularly lower than under 1Pa, can have the pumping efficiency higher than rocker-type piston pump or pump efficiency.But in the pressure range of the 2-20Pa here preferably set, pump efficiency or the pumping efficiency of turbomolecular pump but obviously decline.Higher than 2Pa, 4Pa or even adopt turbomolecular pump higher than in the pressure range of 5Pa, the gas flow of this required such as 3slm or even 5slm, be that do not reach or not attainable technically.
Based on size and the geometric configuration of rocker-type piston pump, it scarcely can be connected directly between on plasma processing chambers or encapsulate on the shell of vacuum chamber of this plasma processing chambers.And need this to be equipped with the vacuum pump apparatus of at least one rocker-type piston pump through gas-guiding structure as being that fluid technique is connected through air outlet with this rocker-type piston pump.At this, corresponding gas-guiding structure or pipeline so design, and have impact little as far as possible to make effective suction capactity of the transmission value of its fluid technique on this vacuum pump apparatus.
The flow resistance or the transmission value that are in the gas-guiding structure between plasma processing chambers and vacuum pump apparatus should be at least large as the suction capactity of this vacuum pump apparatus.Therefore, effective suction capactity of this vacuum pump apparatus is drawn by the serial connection of the suction capactity of this rocker-type piston pump and the transmission value of configuration gas-guiding structure at its upstream.
If total transmission value of the gas-guiding structure described in this is such as 3000m
3the suction capactity of/h and this vacuum pump apparatus is also 3000m
3/ h, be then added by this transmission value and this suction capactity inverse the inverse drawing this effective suction capactity, it is 1500m to described example
3/ h.
It is to be noted at this, total suction capactity given here or transmission value be always normalized into plasma processing chambers with square metre internal surface represented.
By another preferred version, this vacuum pump apparatus in the pressure range of 2-50Pa, but at least has the suction capactity of approximately constant in the pressure range of 2-20Pa.The suction capactity of this vacuum pump apparatus is about at most 10% or 20% with the deviation of maximum aspiration ability is the highest in described 2-20Pa pressure range.Higher than in the pressure range of 4Pa or 5Pa, therefore in the pressure range of 4Pa or 5Pa to 20Pa, the deviation of the maximum aspiration ability of this suction capactity and this vacuum pump apparatus is preferably about up to 5%.
Particularly can realize the constant suction capactity in this large pressure range with rocker-type piston pump.In this respect, this kind of pump sees it is also favourable with process technology.The pressure process of the process gas therefore fed to plasma processing chambers by this at least one of throttling just this plasma processing chambers inside adjustable.
In addition, also under constant gas flow, at least pressure process needed for this plasma processing chambers inside can be regulated in certain limit by the variable rotation frequency of this rocker-type piston pump.Whereby, such as compensate as by applying or deposit them and the pressure process changed when the transmission value of this gas-guiding structure slowly changes by corresponding raising or the revolution that changes this rocker-type piston pump.
By the scheme that another is favourable, the cross section that can flow through connecting the connecting tube of this plasma processing chambers and this vacuum pump apparatus in flow technique is at least 200cm
2, be preferably at least 490cm
2, or be even greater than 550cm
2.At cross section as in rounded connecting tube situation, it is about at least 160mm or 250mm corresponding to diameter.The connecting tube provided between plasma processing chambers and vacuum pump apparatus, so large flow cross section is necessary, with the gas flow needed for can having and keep in plasma processing chambers.
In addition, the minimum cross-section of this connecting tube is relevant with the length of this connecting tube.If the spacing between vacuum pump apparatus and plasma processing chambers is as being greater than 1 meter, then also may also need much bigger flow cross section.
By another preferred scheme, this plasma processing chambers is configured in vacuum chamber.This plasma processing chambers is preferably formed the shielding case (Einhausung) of the plasma body that this will produce, and makes the effect of inwall from plasma body of this vacuum chamber.At this, this plasma processing chambers has at least one, preferred multiple passage, and the process gas in this importing plasma processing chambers in person who lives in exile's vacuum chamber, and can be able to be flowed in the connecting tube of guiding vacuum pump apparatus therefrom by described passage.
The geometric configuration of the passage between plasma processing chambers and vacuum chamber and the transmission value of number on this gas-guiding structure have conclusive impact.
By a favourable scheme, between this plasma processing chambers and this vacuum chamber, the summation of the cross-sectional area of all passages that can flow through is at least 100cm
2, be preferably at least 250cm
2, be more preferably at least 500cm
2.Here, those cross sections are also the internal surfaces of every square metre being normalized into this plasma processing chambers.If the whole internal surface of this plasma processing chambers is such as only 0.5m
2, then the cross-sectional area of passage described in this is at least 50cm
2, be preferably at least 120cm
2or be at least 250cm
2.If the internal surface of this plasma processing chambers is greater than 1m
2, then certainly corresponding conversion is suitable for.
By another preferred version, this plasma processing apparatus is equipped with at least one plasma producing apparatus, and this plasma producing apparatus has at least one excitation variable winding and excites at least one at the inner producible plasma body of this plasma chamber for induction.It is outside or be even favourable in this vacuum chamber outside that this excitation variable winding is configured in this plasma chamber.More uniform plasma body can be formed thus on the one hand on pending on-chip area.This excitation variable winding can be avoided to a great extent by means of the excitation variable winding provided in the outside of this plasma processing chambers or this vacuum chamber outside in addition and itself be subject to action of plasma.
Can avoid the purifying treatment costly to excitation variable winding thus, this is because plasma coating process also can produce coating to excitation variable winding.In addition, by the design of excitation variable winding that is outside at this plasma processing chambers or that provide in this vacuum chamber outside, the volume of this plasma processing chambers or this vacuum chamber can advantageously be reduced.Reducing of chamber volume always improves with the efficiency of this plasma processing apparatus.Set pressure process and other processing parameter such as process temperature can rationally regulate by this way smoothly.In addition, process circulation or the cycling time of this plasma processing apparatus can also advantageously be reduced.
By another preferred version, the maximum output high frequency power (PHF) of this plasma processing apparatus is at least respectively the internal surface of this plasma processing chambers of 5kW, 7.5kW or 10kW every square metre.Highdensity plasma body can be produced in the inside of this plasma processing chambers by means of this kind of high-power excitation variable winding and plasma generator.At this, the electron density of this plasma body or density value can reach and be greater than 1 x 10
18every cubic metre.
Aforementioned parameters namely pressure process be 2-50Pa or 2-20Pa, the gas volume flow plasma coating process of carrying out under be the output high frequency power of the plasma processing apparatus of 3-15slm and this induction being 5-10kW can realize on-chip high layer homogeneity.At this, the fluctuation of thickness is less than 5%, 3%, 2% of thickness or is even less than 1%.
By another preferred version, this plasma processing apparatus has the excitation variable winding of preferably individual pen formula, and this coil encapsulates this plasma processing chambers in peripheral direction substantially, and it is preferably configured in the outside of this plasma processing chambers.At this, this coil plane can be arranged essentially parallel to the plane of this at least one piece of substrate.
Substantially encapsulate this plasma processing chambers by this excitation variable winding at peripheral direction, the plane normal direction being at least one piece of pending substrate can be formed to a great extent for region freely.Even can imagine at this, at least two pieces of substrates to be configured in therebetween to face each other with its pending face and on the opposite side of the gas ions produced by means of excitation variable winding.
In addition, by another independently aspect, a kind of method of substrate for the treatment of being placed in plasma processing chambers inside is to provide.In this method, the first step is placed in this plasma processing chambers by this at least one piece of substrate.Through regulating given process parameter particularly after pressure process, in this plasma processing chambers, produce plasma body.Be preferably based on induction at this generation plasma body to excite, this excites and can produce by means of being such as configured in the coil that this plasma processing chambers is outside or vacuum chamber is outside.
For producing plasma body, at least one process gas or process gas mixture or multiple precursor gases are imported in this plasma processing chambers.Also add this at least one process gas of suction or corresponding process gas mixture simultaneously.
In the plasma caused, also carrying out chemical reaction, becoming reactant gases to make the gas conversion at least partially through importing.The reactant gases that the process gas of this importing and at least one are formed due to Cement Composite Treated by Plasma and corresponding gaseous mixture finally can be extracted out in the vacuum pump apparatus be connected that flows with this plasma processing chambers by means of through air outlet.
By the controlled importing of this at least one process gas, and by extract this process gas and corresponding reactant gases and corresponding gaseous mixture out simultaneously, the desired gas flow of this plasma processing chambers inside can be regulated targetedly.At this moment, the 2-50Pa in this plasma processing chambers, in the pressure range of the internal surface of the plasma processing chambers of preferred 2-20Pa every square metre, provides at least 1500m by dinitrogen
3effective suction capactity of the vacuum pump apparatus of/h.
As long as import other process gas or reactant gases in this plasma processing chambers, or extract these gas out by this plasma processing chambers, the then effective suction capactity occurring deviation at this of also this vacuum pump apparatus adjustable, and also other gas flow adjustable thus.Conventional vacuum pump apparatus will to many available process gas as helium, hydrogen, argon be identified and corresponding demarcation in its suction capactity.From the usual data sheet provided by pump business, such as, also can be converted into other gas by by the gas flow of nitrogen or corresponding effective suction capactity of plasma processing chambers and carry out corresponding demarcation.
Viewed from process technology, yes, before this at least one process gas is fed plasma processing chambers, vacuum pump apparatus be made to put into operation.When pump operation, this at least one process gas is so fed in chamber, to make as far as possible directly to reach required pressure process in chamber.At this moment or in advance pass through be connected in series exhaust or suction or by the gate mechanism that use is suitable, this at least one piece of substrate inserted in plasma processing chambers.
By a preferred version, also at plasma processing chambers in 2-50Pa, in the pressure range of the internal surface of the plasma processing chambers of preferred 2-20Pa every square metre, at least 3000m to be provided
3/ h, 4000m
3/ h, 4500m3/h, 5000m
3/ h or at least 5500m
3effective suction capactity of/h, each all by the internal surface of every square metre of plasma processing chambers.
By means of so effective suction capactity, in the pressure range of 2-20Pa, more preferably gas flow or gas volume flow respectively can be adjusted to and be greater than 3slm, 3.5slm, 5slm, 7.5slm, 10slm, 12.5slm or be even greater than 15slm.Especially higher than in the pressure range of 5Pa, the gas flow described in this need regulate.Particularly higher than in the pressure range of 10Pa or 15Pa, gas volume flow by the plasma processing chambers internal surface of every square metre can be adjusted to and be greater than 7.5slm or be greater than 10slm, under 20Pa pressure at the most, can reach and be greater than 15slm, at 50Pa gas under pressure volume flow at the most, even codamine is aobvious is greater than 20slm.
In another preferred version, this at least one process gas is so imported in this plasma processing chambers, and extracted out by this plasma processing chambers, to make at 2-50Pa, in the pressure range of preferred 2-20Pa, this associated gas and/or the residence time t of reactant gases in this plasma processing chambers that should produce due to plasma process are t≤0.5s, t≤0.3s or t≤0.2s.
By another advantageous scheme, the ratio of will to be also the HF-transmitted power (PHF [kW]) of the plasma producing apparatus of kW by unit to unit the be pressure (p [Pa]) of the every square metre of plasma processing chambers internal surface existed in the plasma processing chambers of Pa is adjusted to and is more than or equal to 1.Therefore at 1m
2the internal surface for the treatment of chamber and the pressure process situation of 2Pa under, the HF-transmitted power of this plasma producing apparatus need be set as at least 2kW.In elevated pressures as under 5Pa, the HF-power of at least 5kW must be set as.If the internal surface in this process chamber is about 2m
2, then to set or be adjusted to corresponding higher HF-power.
Here also it is noted that, the plasma processing apparatus described in this and the method for the treatment of at least one piece of substrate be placed in plasma processing chambers are directly mutually related.Therefore the consequent advantage of all characteristic sum described in plasma treatment unit is equally applicable to this treatment process, and vice versa.
Accompanying drawing explanation
Illustrate in other object, feature and the embodiment of favourable scheme below described in adjoint.
Wherein:
Fig. 1 illustrates the schematic diagram of plasma processing apparatus,
Fig. 2 illustrates the relation of the exemplary application rate that obtains and gas flow,
Fig. 3 illustrates under this plasma producing apparatus different capacity, in the spatial distribution of on-chip deposition rate.
Embodiment
The plasma processing apparatus 10 schematically drawn in Fig. 1 has vacuum chamber 11, and its internal configuration has plasma processing chambers 12.This plasma processing chambers 12 is connected in flow technique with the feeding pipeline 34 for feeding at least one process gas 15.This feeding pipeline 34 has entrance 16 in the open area of this plasma processing chambers 12.The process gas 15 or the corresponding gaseous mixture that flow into this plasma processing chambers 12 are convertible into plasmoid by the small part that is coupled to of electromagnetic energy, and the plasma producing apparatus 40 of this electromagnetic energy such as by having circulating type excitation variable winding 42 provides.
Therefore, by exciting formation plasma body 14 through excitation variable winding 42 in the induction that this plasma processing chambers 12 inside provides.This plasma body mainly for the treatment of in this plasma processing chambers 12 inside, can preferably be placed in the surface of the substrate 1 on movable carrier 2.
This vacuum chamber 11 is connected with connecting tube 26, can from this plasma processing chambers 12 or the reactant gases 15 ' pumping out this at least one process gas 15 from this vacuum chamber 11 or formed due to plasma process by this pipeline.Finally, the downstream of this connecting tube 26 is set with vacuum pump apparatus 18.This vacuum pump apparatus preferably has off-gas pump (Vorpumpe) 28 and rocker-type piston pump 30 or Roots's mechanical booster pump.The structural shape of rocker-type piston pump 30 makes to arrange air guide connecting tube 26 between this vacuum pump apparatus 18 and this vacuum chamber 11.
The gas-guiding structure 22,24,26 be between plasma processing chambers 12 and vacuum pump apparatus 18 has this kind of geometrical shape best in flow technique and configuration, to give the effective suction capactity needed for this vacuum pump apparatus 18, is namely at least 1500m
3/ h every square metre plasma processing chambers 12 internal surface.
Therefore, the passage 22 of the suitable dimension of enough numbers is provided between plasma processing chambers 12 and vacuum chamber 11.Therefore, these should be at least 100cm also referred to as the summation of the cross-sectional area of the passage 22 of pump gap (Pumpspalte)
2, preferably at least 250cm
2, or more preferably at least 500cm
2every square metre of plasma processing chambers 12 internal surface.
Thus, advantageously, between plasma processing chambers 12 and vacuum chamber 11, at least 4 are provided, preferably 8 or even 16 passages 22.Be adjacent to be arranged on the sidewall 36 of plasma processing chambers 12 at these these passages.On the other hand, these passages 22 also can be limited by the carrier 2 of this at least one piece pending substrate 1, or are limited by the base plate 2 of corresponding this plasma processing chambers formed.
At carrier or between chamber base plate 2 and vacuum chamber 11, at least one is extended with at this plasma processing chambers 12 downstream part, preferably many communication channels 24, through this communication channel, by plasma processing chambers 12 flow out and flow into the gas 15,15 ' of vacuum chamber 11 and can enter air outlet 20 and linking conduit 26 be communicated with there.
By the length of this linking conduit 26 to vacuum pump apparatus 18, the interior cross section that can flow through of this linking conduit 26 is set as at least 200cm
2, preferably at least 490cm
2or be greater than 500cm
2.At this, the corresponding circular inner diameter of this linking conduit 26 should be at least 160mm, preferred 250mm or larger.
Finally, provide exhaust pipeline 32 in the downstream of this vacuum pump apparatus 18, through this exhaust pipeline, the gas 15,15 ' should extracted out from plasma processing chambers 12 can through disposing or reprocessing.
For obtaining the coating of as far as possible all even smooth substrate 1, especially reach the application rate being greater than 4nm/s, 5nm/s, 6nm/s, 8nm/s or being even greater than 10nm/s, advantageously, in plasma processing chambers, gas flow is adjusted to and is greater than 3slm, 3.5slm, 5slm, 7.5slm, 10slm, 12.5slm or is even greater than 15slm.
If combine suitably high excitation energy or the high-frequency emission power of the plasma producing apparatus to have at least one excitation variable winding 42, then can produce the plasma body 14 of higher density, its be particularly suitable for guaranteeing before mentioned high application rate simultaneously have little thickness fluctuation concurrently.
Following table provides the various flow technique parameters of existing plasma processing apparatus under various process pressure with given geometrical dimension.
| 1 | 2 | 3 | 4 | 5 | 6 |
| Pressure | Gas-guiding structure transmission value | Pump suction capactity | Effectively take out receipts ability | Gas flow | The residence time |
| [Pa] | [m 3/h] | [m 3/h] | [m 3/h] | [slm] | [s] |
| 2 | 5463 | 5500 | 2741 | 0.9 | 0.28 |
| 5 | 13398 | 5800 | 4048 | 3.4 | 0.19 |
| 10 | 25774 | 5700 | 4668 | 7.8 | 0.16 |
| 20 | 50000 | 5600 | 5036 | 16.8 | 0.15 |
Each pressure process is provided in the 1st hurdle.In the 2nd hurdle, provide the summation of the flow technique transmission value of this gas-guiding structure in this plasma processing chambers downstream and this vacuum pump apparatus upstream drawn this, unit is cube m/h.Here show, be somebody's turn to do the 5500m nearly under the initial pressure of 2Pa
3the transmission value of/h and the about 50000m under being elevated to 20Pa pressure
3/ h.
In addition, be given in each common pressure process in the 3rd hurdle under, the suction capactity of this vacuum pump apparatus 18 or pumping power.At this, this vacuum pump apparatus 18 has the rocker-type piston pump described.As shown by third column, the suction capactity in 2-20Pa pressure range is almost constant.
By the suction capactity of this vacuum pump apparatus and the transmission value of the gas-guiding structure between vacuum pump apparatus 18 and plasma processing chambers 12 that provides in the 2nd hurdle, draw effective suction capactity of this vacuum pump apparatus respectively provided in the 4th hurdle.In the whole pressure range of the 2-20Pa of institute's concern, this effective suction capactity is all greater than 2500m
3/ h.Even be elevated to rising with pressure process, and for being greater than 5000m under about 20Pa
3/ h.
Draw the gas flow represented with per minute standard liter (slm) provided in the 5th hurdle thus.Be issued to the gas flow of 0.9slm at 2Pa pressure, and under 5Pa, this gas flow is 3.4slm.Under taller pressure process as under 10Pa or 20Pa, this gas flow is even 7.8slm or 16.8slm.Finally, by described in this with the parameter that provides in table 1, draw the residence time of this process gas in plasma processing chambers 12 provided in the 6th hurdle.
Under 2Pa, this residence time is less than 0.3 second.At larger pressure process as under 5Pa, this residence time even can be less than 0.2 second.At lopa, the residence time is 0.16 second, and under 20Pa, the residence time is 0.15 second.
In figs 2 and 3, the example results applied planar substrates 1 with silicon nitride is shown.Use the plasma processing apparatus 10 with plasma processing chambers 12 of the present invention at this, the internal surface of this plasma processing chambers is 1.1m
2, it is connected in flowing with vacuum pump apparatus 18.The process gas 15 being used for deposit silicon nitride layer is imported in plasma processing chambers 12.At this, this plasma processing chambers 12 and this vacuum pump apparatus 18 have the transmission value described in table 1 or suction capactity.
To excite by means of induction at this and cause plasma body 14.This plasma producing apparatus 40 has the excitation variable winding 42 of preferably individual pen formula, and this coil is in the outside of this plasma processing chambers 12, is also configurable on the outside of this vacuum chamber 11 when needing.The plane that this excitation variable winding 42 plane is preferably arranged essentially parallel to this at least one piece of substrate 1 extends.
Adopt the gas flow of change, and when the HF-power of plasma producing apparatus 40 is 10kW, the application rate on the substrate 1 shown in Fig. 2 can be realized.At about 2000sccmNH
3gas flow and SiH at 1000sccm
4gas flow under (it is corresponding to 2.0slm or 1.0slm), the application rate of 7.8nm/s can be reached when process temperature is 360 DEG C.At this moment the pressure process in vacuum chamber or plasma processing chambers is about 7.6Pa.
Even at 1500sccm NH
3lower gas flow or the SiH of corresponding reduction
4gas flow under, also can reach higher than 5nm/s, 5.5nm/s or even higher than the application rate of 5.75nm/s.
In addition, Fig. 3 also illustrates each at 1.9slm NH
3with 0.8slm SiH
4gas flow under, the various application rate when changing the HF-power of plasma producing apparatus 40.
In effective suction capactity situation of this vacuum pump apparatus 18 corresponding to table 1, before plasma body 14 causes, the pressure existed in plasma processing chambers 12 is about 6.5Pa.Under other identical processing parameter and process parameter, the substrate 1 of at least one piece of silicon sample carrys out deposit silicon nitride by causing and protecting special HF-plasma body 14.Layer thickness distribution in the space over the substrate surface of this gained or therewith corresponding application rate measure under the HF-power being respectively 2kW, 3kW, 4kW, 7kW and 10kW at HF-power.
By gas molecule is resolved into plasma body 14 improve this gas number in plasma processing chambers 12 share and thus this pressure increase to 7.8Pa at the most.
As shown in Figure 3, under given pressure process, when being less than the HF-power of 3kW, this application rate is less than 1nm/s.This plasma body 14 irradiates uneven and faint.When HF-power is 3-5kW, this plasma body 14 intensity increases.But this application rate is more uneven, there is obvious minimum value at the center of this Plasma Center or this substrate 1.This length is the substrate 1 of 380mm, its by the center shown in Fig. 3 about 190mm place.
First, from the HF-power of 7kW and exceed this value, the coating of approaches uniformity can be realized on the face of this substrate 1.The minimum value before observed in this application rate no longer exists.But the decline a little of this application rate is there will be at the edge of substrate 1.
Under the HF-power of 10kW, this edge declines and no longer exists.The layer particularly produced with the deposition rate of 7.8nm/s under the HF-power of 10kW is shown to be obviously uniform.The center of this substrate be near 190mm from the scale that Fig. 3 is given is measured, and the thickness in-170mm or-150mm to+150mm or+170mm scope on this substrate 1 is similar to constant.Compared with the thickness at center or average thickness, the thickness change in the whole length of whole of this substrate 1 upper or about 340mm is less than 4%, is less than 3% or be even less than 2.5%.
Once observed, the minimum HF-power needed for this even application is also relevant with pressure: as under 3Pa pressure, can realize even application in 5kW.But due to lower gas flow, be lower to the application rate of embodiment described in this.
Label table
1 substrate
2 carriers
10 plasma processing apparatus
11 vacuum chambers
12 plasma processing chambers
14 plasma bodys
15 process gas
16 inlet mouths
18 vacuum pump apparatus
20 air outlets
22 passages
24 communication channels
26 linking conduits
28 off-gas pumps
30 rocker-type piston pumps
32 exhaust pipelines
34 feeding pipelines
36 sidewalls
40 plasma producing apparatus
42 excitation variable windings
Claims (17)
1., for the treatment of a plasma processing apparatus at least one piece of substrate (1), it has:
-one plasma processing chambers (12), can produce the plasma body (14) for this substrate of process (1) in this chamber,
-at least one passes into inlet mouth (16) in this plasma processing chambers (12), for importing at least one process gas (15),
-one vacuum pump apparatus (18), it is connected in flowing with this plasma processing chambers (12) through air outlet (20), and this vacuum pump apparatus presses dinitrogen (N in the pressure range of 2-50Pa
2) meter and the effective suction capactity being normalized into the internal surface of this plasma processing chambers (12) be at least 1500m
3/ h every square metre plasma processing chambers (12) internal surface.
2. the plasma processing apparatus of claim 1, wherein effective suction capactity of this vacuum pump apparatus (18) is by the suction capactity of this vacuum pump apparatus (18) itself with by whole gas-guiding structure (22,24,26) the transmission value composition of flow technique, this whole gas-guiding structure is in this plasma processing chambers (12) downstream and this vacuum pump apparatus (18) upstream.
3. the plasma processing apparatus of one of aforementioned claim, wherein this vacuum pump apparatus (18) is in the pressure range of 2-50Pa, by dinitrogen (N
2) meter and the effective suction capactity being normalized into the internal surface of this plasma processing chambers (12) be at least 3000m
3/ h, 4000m
3/ h, 4500m
3/ h, 5000m
3/ h or 5500m
3/ h, each all by every square metre of plasma processing chambers (12) internal surface.
4. the plasma processing apparatus of one of aforementioned claim, wherein this vacuum pump apparatus (18) is higher than 5Pa and/or higher than in the pressure range of 10Pa, by dinitrogen (N
2) meter and the effective suction capactity being normalized into the internal surface of this plasma processing chambers (12) be at least 3000m
3/ h, 4000m
3/ h, 4500m
3/ h, 5000m
3/ h or 5500m
3/ h, each all by every square metre of plasma processing chambers (12) internal surface.
5. the plasma processing apparatus of one of aforementioned claim 2-4, wherein at the gas-guiding structure (22 that this plasma body (14) downstream and this vacuum pump apparatus (18) upstream provide, 24,26) the total transmission value being normalized into the internal surface of this plasma processing chambers (12) under 2Pa pressure is at least 2000m
3/ h, 3000m
3/ h, 4000m
3/ h, 5000m
3/ h or at least 6000m
3/ h, each all by every square metre of plasma processing chambers (12) internal surface.
6. the plasma processing apparatus of one of aforementioned claim, wherein this vacuum pump apparatus (18) has rocker-type piston pump (30), and the suction capactity that be normalized into the internal surface of this plasma processing chambers (12) of this pump under 2Pa pressure is at least 2000m
3/ h, 3000m
3/ h, 4000m
3/ h, 5000m
3/ h or at least 6000m
3/ h, each all by every square metre of plasma processing chambers (12) internal surface.
7. the plasma processing apparatus of one of aforementioned claim, wherein this vacuum pump apparatus (18) has the suction capactity of approximately constant in the pressure range of 2-50Pa, is about 10% or 20% with the deviation of its maximum aspiration ability is the highest.
8. the plasma processing apparatus of one of aforementioned claim, the cross section that can flow through wherein connecting the connecting tube (26) of this plasma processing chambers (12) and this vacuum pump apparatus (18) in flow technique is at least 200cm
2, be preferably at least 490cm
2, or be greater than 500cm
2.
9. the plasma processing apparatus of one of aforementioned claim, wherein this plasma processing chambers (12) is configured in a vacuum chamber (11).
10. the plasma processing apparatus of claim 9, wherein this plasma processing chambers (12) can flow through passage (22) and vacuum chamber (11) through at least one and is connected in flow, and wherein between plasma processing chambers (12) and this vacuum chamber (11), the summation of the cross-sectional area of all passages (22) that can flow through is at least 100cm
2, preferably at least 250cm
2, more preferably at least 500cm
2, each all by every square metre of plasma processing chambers (12) internal surface.
The plasma processing apparatus of one of 11. aforementioned claims, it also has at least one plasma producing apparatus (40), and this plasma producing apparatus has the plasma body (14) that at least one excitation variable winding (42) excites at least one can produce in this plasma chamber (12) inside for induction.
The plasma processing apparatus of 12. claims 11, wherein this excitation variable winding (42) substantially encapsulating this plasma processing chambers (12) in peripheral direction is configured in the outside of this plasma processing chambers (12), and its coil plane is arranged essentially parallel to the plane of this at least one piece of substrate (1).
The plasma processing apparatus of one of 13. aforementioned claims, wherein the output high frequency power (PHF) of this plasma producing apparatus (40) is at least respectively the internal surface of this plasma processing chambers (12) of 5kW, 7.5kW or 10kW every square metre.
14. 1 kinds are placed in the method for the inner substrate (1) of plasma processing chambers (12) for the treatment of at least one piece, and it has the following step:
-this at least one piece of substrate is placed in this plasma processing chambers (12),
-at least one process gas (15) is imported in this plasma processing chambers (12),
-by means of through air outlet (20) and this plasma processing chambers (12) in flowing the vacuum pump apparatus (18) be connected, the reactant gases (15 ') extracted this at least one process gas out and/or formed due to Cement Composite Treated by Plasma
-produce plasma body (14) in this plasma processing chambers (12) inside,
In the pressure range of-2-50Pa wherein in this plasma processing chambers (12), provide by dinitrogen and be normalized into the internal surface of this plasma processing chambers (12) be at least 1500m
3effective suction capactity of plasma processing chambers (12) internal surface of/h every square metre.
The method of 15. claims 14, in the pressure range of plasma processing chambers (12) internal surface of the 2-50Pa every square metre wherein in this plasma processing chambers (12), gas flow is adjusted at least 3slm, 3.5slm, 5slm, 7.5slm, 10slm, 12.5slm or at least 15slm.
The method of one of 16. claims 14 or 15, wherein this at least one process gas (15) so to import in this plasma processing chambers (12) and is extracted out by this plasma processing chambers, to make this associated gas (15) in the pressure range of 2-50Pa and/or the residence time of reactant gases (15 ') in this plasma processing chambers (12) for≤0.5s, t≤0.3s or≤0.2s.
Unit is wherein the HF-transmitted power (PHF [kW]) of the plasma producing apparatus (40) of kW by the method for one of 17. claim 14-16 is that the ratio of pressure (p [Pa]) of every square metre of plasma processing chambers (12) internal surface existed in the plasma processing chambers (12) of Pa is adjusted to and is greater than 1 to unit.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102012017453.5 | 2012-09-04 | ||
| DE102012017453.5A DE102012017453A1 (en) | 2012-09-04 | 2012-09-04 | Plasma treatment device and method for treating at least one substrate |
| PCT/EP2013/002640 WO2014037101A1 (en) | 2012-09-04 | 2013-09-03 | Plasma treatment device and method for treating at least one substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104704142A true CN104704142A (en) | 2015-06-10 |
Family
ID=49261488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380051002.7A Pending CN104704142A (en) | 2012-09-04 | 2013-09-03 | Plasma treatment device and method for treating at least one substrate |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20150053789A (en) |
| CN (1) | CN104704142A (en) |
| DE (1) | DE102012017453A1 (en) |
| WO (1) | WO2014037101A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117176A (en) * | 2019-06-20 | 2020-12-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and plasma processing system including the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102381679B1 (en) | 2021-09-13 | 2022-04-01 | 주식회사 씨맵 | Auto pressure control vacuum plasma system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5879139A (en) * | 1995-07-07 | 1999-03-09 | Tokyo Electron Limited | Vacuum pump with gas heating |
| US20020164883A1 (en) * | 1997-01-29 | 2002-11-07 | Tadahiro Ohmi | Plasma device |
| CN101304630A (en) * | 2007-02-02 | 2008-11-12 | 应用材料公司 | Internal balanced coil for inductively coupled high density plasma processing chamber |
| US20120040519A1 (en) * | 2010-08-13 | 2012-02-16 | Bureau Of Energy, Ministry Of Economic Affairs | Method for forming silicon film having microcrystal structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4010663C2 (en) * | 1990-04-03 | 1998-07-23 | Leybold Ag | Device and method for plasma-assisted coating of workpieces |
| US5683548A (en) | 1996-02-22 | 1997-11-04 | Motorola, Inc. | Inductively coupled plasma reactor and process |
| US7572647B2 (en) * | 2007-02-02 | 2009-08-11 | Applied Materials, Inc. | Internal balanced coil for inductively coupled high density plasma processing chamber |
| KR101563541B1 (en) | 2010-12-30 | 2015-10-27 | 어플라이드 머티어리얼스, 인코포레이티드 | Thin film deposition using microwave plasma |
-
2012
- 2012-09-04 DE DE102012017453.5A patent/DE102012017453A1/en not_active Withdrawn
-
2013
- 2013-09-03 KR KR1020157008720A patent/KR20150053789A/en not_active Application Discontinuation
- 2013-09-03 CN CN201380051002.7A patent/CN104704142A/en active Pending
- 2013-09-03 WO PCT/EP2013/002640 patent/WO2014037101A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5879139A (en) * | 1995-07-07 | 1999-03-09 | Tokyo Electron Limited | Vacuum pump with gas heating |
| US20020164883A1 (en) * | 1997-01-29 | 2002-11-07 | Tadahiro Ohmi | Plasma device |
| CN101304630A (en) * | 2007-02-02 | 2008-11-12 | 应用材料公司 | Internal balanced coil for inductively coupled high density plasma processing chamber |
| US20120040519A1 (en) * | 2010-08-13 | 2012-02-16 | Bureau Of Energy, Ministry Of Economic Affairs | Method for forming silicon film having microcrystal structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117176A (en) * | 2019-06-20 | 2020-12-22 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and plasma processing system including the same |
| CN112117176B (en) * | 2019-06-20 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and plasma processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150053789A (en) | 2015-05-18 |
| WO2014037101A1 (en) | 2014-03-13 |
| DE102012017453A1 (en) | 2014-03-06 |
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