CN104701329B - Semiconductor sensing device - Google Patents
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Abstract
The present invention discloses a kind of semiconductor sensing device.Semiconductor sensing device includes multiple pixels and a phase grating structure (phase grating structure).Phase grating structure is set in those pixels, and phase grating structure has multiple periodic arrangement patterns (periodically arranged patterns).
Description
Technical field
The content of present invention is related to a kind of semiconductor sensing device, and more particularly to a kind of with can modulation appearance color
Semiconductor sensing device.
Background technique
Since bio-identification information (biometric information) is compared to conventionally employed user's code name and password
Mode there is higher reliability, therefore fingerprint sensing device is applied to more more and more universal in user's certification, and referred to
Line sensor has also been applied to various portable electronic devices, e.g. mobile phone and tablet computer etc..On the other hand, for can
The design of portable electronic apparatus requires also to have improved.
Therefore, designers are dedicated to developing a kind of fingerprint sensing device invariably, not only may be adapted to be installed on portable electricity
In sub-device, still so that portable electronic devices, which are possessed, enables the favorite design of consumer.
Summary of the invention
The content of present invention is about a kind of semiconductor sensing device.Phase light in embodiment, in semiconductor sensing device
Grid structure (phase grating structure) has multiple periodic arrangement patterns and is set in pixel, accordingly, via
Change the design of the periodic arrangement pattern of phase grating structure, and is capable of the appearance color of modulation semiconductor sensing device.
An embodiment of content according to the present invention proposes a kind of semiconductor sensing device.Semiconductor sensing device includes more
A pixel and a phase grating structure (phase grating structure).Phase grating structure has multiple periodicity
Arrangement pattern (periodically arranged patterns) is simultaneously set in pixel.
More preferably understand to have to above-mentioned and other aspect of the invention, preferred embodiment is cited below particularly, and cooperates institute
Attached drawing is described in detail below:
Detailed description of the invention
Fig. 1 is the schematic diagram of the semiconductor sensing device of an embodiment of the content of present invention；
Fig. 2~Fig. 8 is the schematic top plan view of the phase grating structure of some embodiments of the content of present invention；
Fig. 9~Figure 10 is the stereoscopic schematic diagram of the phase grating structure of some embodiments of the content of present invention；
Figure 11 A~Figure 11 B is a kind of manufacturing method schematic diagram of semiconductor sensing device of one embodiment of the invention.
Symbol description
100: semiconductor sensing device
110: flatness layer
120: passivation layer
130: lid oxide layer
140,153,157,1140,1140 ': nitride layer
150: protective layer
151,155,1130,1130 ': oxide layer
260,360,460,560,660,760,860,1060: phase grating structure
261,361,461,561,661,761,861: the first area
263,363,463,563,663,763,863: the second area
761c, 861c: pothole
1061: film layer
1063: channel
1065: opening
1110,1110 ': substrate
D1~D7, S: size
H1, H2: height
P: pixel
Specific embodiment
In the embodiment of this summary of the invention, a kind of semiconductor sensing device is proposed.In embodiment, semiconductor sensing device
In phase grating structure have and multiple periodic arrangement patterns and be set in pixel, accordingly, via changing phase grating knot
The design of the periodic arrangement pattern of structure, and it is capable of the appearance color of modulation semiconductor sensing device.However, embodiment and correspondence
Attached drawing can't limit the range of the invention to be protected only to illustrate as example.Also, have in attached drawing and invention description
The element of identical label is identical.In addition, it is noted that the dimension scale on attached drawing not necessarily compares according to actual product etc.
Example is drawn, therefore is not intended as limiting the scope of the present invention and be used.However, embodiment is as example only to illustrate, not
The range of the invention to be protected can be limited.In addition, the element that the attached drawing clipped in embodiment is wanted, to clearly show that the present invention
Technical characterstic.
Fig. 1 is please referred to, the schematic diagram of the semiconductor sensing device 100 of an embodiment of the content of present invention is painted.Partly lead
Body sensing device 100 includes multiple pixel P and a phase grating structure.Phase grating structure has multiple periodic arrangement figures
Case is simultaneously set on pixel P.
In embodiment, semiconductor sensing device 100 can be fingerprint sensing device or complementary metal oxide semiconductor shadow
As sensor (CMOS image sensor), all include pixel array and with can modulation appearance color.For example, half
Conductor sense device 100 can be capacitive silicon formula (capacitance silicon type) fingerprint sensing device or radiofrequency field formula
(RF field type) fingerprint sensing device.
The periodic arrangement pattern of phase grating structure makes semiconductor sensing device 100 have specific appearance color.
Particularly, duplicate periodic arrangement pattern has periodically, this repeatability makes covering cycle arrange pattern with periodical
Semiconductor sensing device 100 have uniform appearance color.Some embodiments of content according to the present invention, via change
The design of the periodic arrangement pattern of phase grating structure, can be with the appearance color of modulation semiconductor sensing device 100.Periodically
The narration and embodiment for arranging pattern can be in the collocation Detailed description of the inventions of paragraph herein below.
As shown in Figure 1, semiconductor sensing device 100 may also include a flatness layer 110, flatness layer 110 is formed in pixel P
On.In embodiment, flatness layer 110 is, for example, spin-on glasses layer.
Semiconductor sensing device 100 may also include a passivation layer 120, a lid oxide layer (recap oxide layer) 130
And mononitride layer 140.In embodiment, passivation layer 120 is formed on flatness layer 110, and lid oxide layer 130 is formed in passivation layer
On 120, nitride layer 140 is formed in lid oxide layer 130.Passivation layer 120 is made of oxide, e.g. silica.Nitridation
Nitride layer 140 is, for example, to be made of silicon nitride.After carrying out chemical mechanical grinding manufacture craft to passivation layer 120, upper surface can
Scratches can be will form, lid oxide layer 130 is formed in the effect that planarization can be improved on scratches.In embodiment, passivation layer
E.g. about 13,000 angstroms of 120 height (), the height of nitride layer 140 is, for example, about 7,000 angstroms.
In one embodiment, periodic arrangement pattern can be formed in passivation layer 120, lid oxide layer 130 and nitride layer 140
At least one among.That is, periodic arrangement pattern can be made in passivation layer 120, lid oxide layer 130 and/
Or in the structure of nitride layer 140.In manufacture craft, periodic arrangement pattern can be with passivation layer 120, lid oxide layer 130
And/or nitride layer 140 makes together, or in 140 formation of passivation layer 120, lid oxide layer 130 and/or nitride layer
It makes again afterwards.
As shown in Figure 1, semiconductor sensing device 100 may also include a protective layer 150.Protective layer 150 is formed in pixel P
On.In embodiment, protective layer 150, which is formed on nitride layer 140, provides further guarantor with double of conductor sense device 100
Shield.In embodiment, protective layer 150 may include at least oxide layer stacked and at least mononitride layer.In the present embodiment, such as
Shown in Fig. 1, protective layer 150 includes the dioxide layer 151,155 stacked and second nitride layer 153,157.Oxide layer 151,155
It is made in this way of silica, nitride layer 153,157 is, for example, to be made of silicon nitride.In embodiment, oxide layer (151,155)
Height is, for example, about 10,000 angstroms, and the height of nitride layer (153,157) is, for example, about 50,000 angstroms.However, oxide layer and nitrogen
The height and quantity of compound layer can do appropriate selection according to practical application, be not limited with aforementioned height and quantity.
In one embodiment, periodic arrangement pattern can be formed in protective layer 150.That is, according to the present invention
Embodiment, periodic arrangement pattern can be formed in above-mentioned oxide layer 151,155 and nitride layer 153,157 at least within
One of among.
In some embodiments, the periodic arrangement pattern of phase grating structure be in alignment with each other and have consistent size and
Shape.Periodic arrangement pattern can be polygon pattern, circular pattern, pattern of oval shapes, strip pattern, hollow pattern,
Trellis pattern or saw-tooth like pattern.However, the shape of periodic arrangement pattern can do appropriate selection according to practical application, not
It is limited with aforementioned shapes.
In some embodiments, periodic arrangement pattern may also include the different periodic patterns of at least two groups.Namely
It says, the periodic patterns of these difference groups may have different sizes and/or shape, nevertheless, the period in each group
Property pattern still have repeatability, periodically and have consistent size and shape.These are with different groups of periodic patterns
It can combine in many ways to form phase grating structure, and different combinations can produce different appearance colors.It changes
Yan Zhi can be with the outer of modulation semiconductor sensing device 100 according to the structure combination for adjusting different multiple groups periodic patterns
See color.Further, since the different periodic patterns of those at least two groups have different structures, therefore also there is different foldings
Penetrate rate.In practice, the combination of different periodic patterns can do appropriate selection according to practical application, if what it was constituted
Phase grating structure can make semiconductor sensing device 100 have a specific uniform appearance color.
In one embodiment, the size S of pixel can be about 60 microns x60 microns, and the size of periodic arrangement pattern
It can be about 1~2.5 micron.Therefore, compared to the size of pixel, the small size of periodic arrangement pattern makes semiconductor sense
Device 100 is surveyed, e.g. fingerprint sensing device or CMOS Image Sensor, sensing function can't be by phase grating structures
It influences.
In one embodiment, periodic arrangement pattern has a height, and the size of periodic arrangement pattern is, for example, pattern
Width, length or diameter, and the height of periodic arrangement pattern is about 1:1 relative to the ratio of its size.For example, when
The size of periodic arrangement pattern is, for example, 1~2.5 micron, then the height of periodic arrangement pattern can be 1~2.5 micron.
However, the height and size of periodic arrangement pattern can do appropriate selection according to practical application, not with aforementioned height and ruler
It is very little to be limited.In some embodiments, phase grating structure can have one can modulation height, can be used to modulation semiconductor sensing dress
Set 100 appearance color.
For above content of the invention can be clearer and more comprehensible, some embodiments that phase grating structure is cited below particularly are made in detail
Carefully it is described as follows.Referring to figure 2.~Fig. 8 is painted bowing for the phase grating structure of some embodiments according to the content of present invention
Depending on schematic diagram.
As shown in Fig. 2, phase grating structure 260 has one first area being made of multiple protrusions (protrusions)
261 and by multiple one second areas 263 for constituting of recess (indentations).In some embodiments, periodic arrangement figure
Case can refer to the protrusion in the first area 261 or the recess in the second area 263.As shown in Fig. 2, in the present embodiment, with the second area 263
Recess as periodic arrangement pattern for, those recess be polygon pattern, those polygons recess is in alignment with each other and has
There is consistent size and shape, and the dimension D 1 being recessed is about 1~2.5 micron.
Furthermore since depressed section can be inserted an overlying strata (overlying layer), and overlying strata and phase grating knot
Structure is as made by different materials, therefore the refractive index in the refractive index in the first area 261 and the second area 263 is different.For example, it asks
With reference to Fig. 1, when phase grating structure 260 is made in oxide layer 151, that is to say, that protrusion is made of oxide layer 151,
And the recess of phase grating structure 260 then inserts the nitride layer 153 covered.In this way, which the first area 261 is by oxide layer 151
It is formed, and the second area 263 is formed by nitride layer 153, then the recess in the protrusion in the first area 261 and the second area 263 has not
Same refractive index.
In another embodiment, the structure of the recess of the bump and the second area 263 in the first area 261 as shown in Figure 2 is matched
Setting can also be interchangeable with one another (not being painted).In this way, which the bump in the firstth area becomes as periodic arrangement figure in the present embodiment
Case, and those bumps are polygon patterns, are in alignment with each other and have consistent size and shape.
As shown in figure 3, phase grating structure 360 has one first area 361 being made of multiple protrusions and by multiple
Be recessed one second area 363 constituted.The phase grating structure 360 of the present embodiment and the phase grating structure 260 of previous embodiment
The difference is that the periodic arrangement pattern of phase grating structure 360 is square pattern, and phase grating structure 260
Periodic arrangement pattern be hexagon-shaped pattern.In the present embodiment, the dimension D 2 of periodic arrangement pattern is, for example, that square is recessed
Sunken width.Remaining is repeated no more with previous embodiment similarity.
As shown in figure 4, phase grating structure 460 has one first area 461 being made of multiple protrusions and by multiple
Be recessed one second area 463 constituted.The present embodiment and previous embodiment the difference is that, the week of phase grating structure 460
It is strip pattern that phase property, which arranges pattern, and the dimension D 3 of periodic arrangement pattern is, for example, the width of strip recess.Remaining with it is aforementioned
Embodiment similarity repeats no more.
As shown in figure 5, phase grating structure 560 has one first area 561 being made of multiple protrusions and by multiple
Be recessed one second area 563 constituted.The present embodiment and previous embodiment the difference is that, the week of phase grating structure 560
It is saw-tooth like pattern that phase property, which arranges pattern, and the dimension D 4 of periodic arrangement pattern is, for example, the sunken length of phalanges saw mark of mouth.Remaining with
Previous embodiment similarity repeats no more.
As shown in fig. 6, phase grating structure 660 has one first area 661 being made of multiple protrusions and by multiple
Be recessed one second area 663 constituted.The present embodiment and previous embodiment the difference is that, the week of phase grating structure 660
Phase property arranges the protrusion that pattern is the first area 661, those protrusions are circular pattern, the dimension D of periodic arrangement pattern 5
The diameter of circular protrusion in this way.Remaining is repeated no more with previous embodiment similarity.
As shown in fig. 7, phase grating structure 760 has one first area 761 being made of multiple protrusions and by multiple
Be recessed one second area 763 constituted.The present embodiment and previous embodiment the difference is that, the week of phase grating structure 760
Phase property arranges the protrusion that pattern is the first area 761, those protrusions are hollow pattern, and the size of periodic arrangement pattern
D6 is, for example, the diameter of hollow protrusion.The depth of pothole 761c among each hollow protrusion in the first area 761 with
And second area 763 recess depth can be it is identical or different.Remaining of the present embodiment with previous embodiment similarity not
It repeats again.
As shown in figure 8, phase grating structure 860 has one first area 861 being made of multiple protrusions and by multiple
Be recessed one second area 863 constituted.The present embodiment and previous embodiment the difference is that, the week of phase grating structure 860
It is each hollow protrusion with multiple pothole 861c that phase property, which arranges pattern, and the dimension D 7 of periodic arrangement pattern is for example
It is the width of hollow protrusion.The depth of the pothole 861c of the hollow protrusion in the first area 861 and the second area 863 it is recessed
Sunken depth can be identical or different.Remaining of the present embodiment is repeated no more with previous embodiment similarity.
Fig. 9~Figure 10 is painted the stereoscopic schematic diagram of the phase grating structure of some embodiments according to the content of present invention.In
In some embodiments, the periodic arrangement pattern of phase grating structure has irregular height.For example, as shown in figure 9,
Periodic arrangement pattern for example can be multiple prisms, is in alignment with each other and has consistent size and shape, and height H1 is different
In height H2.However, prism is only as one embodiment with irregular height, the structure of periodic arrangement pattern can be with
Appropriate variation is done according to practical application, is not limited with aforementioned structure.
In some embodiments, phase grating structure can be a film layer in multiple holes or multiple channels, some holes
Hole or those channels are the periodic arrangement pattern of phase grating structure.For example, as shown in Figure 10, phase grating structure
1060 be a film layer 1061, is located among film layer 1061 with multiple channels 1063 and the opening 1065 of multiple trellis is located at film
The upper surface of layer 1061.Channel 1063 is periodically in alignment with each other and has consistent size and shape.Opening 1065 is periodically
Ground is in alignment with each other and has consistent size and shape.In other embodiments, phase grating structure can be multiple holes
Or a film layer in multiple channels, while also and with irregular height.
Structure as shown in Figure 10 be only according to the present invention an embodiment of content have multiple holes or multiple channels
Phase grating structure.In fact, if hole or channel are periodically arranged in three-dimensional phase grating structure, phase
The thin portion structure of optical grating construction can there are many change and deform.For example, with the bionical knot of periodic arrangement pattern
Structure (biomimetic architecture) is also possible to a kind of deformation implementation side of the phase grating structure of the content of present invention
Formula, e.g. the wing structure of butterfly, labyrinth include be made of the rib of the reticular structure of ridge and intersection it is more
The cylindrical type channel of a periodic arrangement.
Figure 11 A~Figure 11 B is painted to be shown according to a kind of manufacturing method of semiconductor sensing device of one embodiment of the invention
It is intended to.As shown in Figure 11 A, a substrate 1110 is provided, forms an oxide layer 1130 on substrate 1110, and form mononitride
Layer 1140 is in oxide layer 1130.Substrate 1110 optionally includes multiple pixels, a flatness layer and a passivation layer and (does not draw
Show).
As shown in Figure 11 B, phase grating structure is made in substrate 1110 ', oxide layer 1130 ' and nitride layer 1140 '.
It is worth noting that, phase grating structure as shown in Figure 11 B is only used for illustrating, its actual structure is not represented.Table 1 arranges
It is used out if the design of Fig. 2~phase grating structure shown in Fig. 8 260~860 is to make the phase grating structure in Figure 11 B
Afterwards, the appearance color result that semiconductor sensing device as shown in Figure 11 B is presented.
Table 1
| Phase grating structure | Appearance color |
| Phase grating structure 260 (Fig. 2) | It is dark red |
| Phase grating structure 360 (Fig. 3) | It is bluish dark red |
| Phase grating structure 460 (Fig. 4) | Blue |
| Phase grating structure 560 (Fig. 5) | Grey |
| Phase grating structure 660 (Fig. 6) | Viridant orange |
| Phase grating structure 760 (Fig. 7) | Orange |
| Phase grating structure 860 (Fig. 8) | Green |
As shown in table 1, via the design for the periodic arrangement pattern for changing phase grating structure, thus it is possible to vary semiconductor sense
Survey the appearance color of device.Furthermore as a result, similar design can generate similar appearance color according to shown in table 1.Citing comes
Say, there is similar structure to configure for phase grating structure 260 and the periodic arrangement pattern of phase grating structure 360, the two it
Between major difference is that pattern shape；Therefore, the appearance color that the two is presented is red and bluish peony respectively,
It is similar each other.Therefore, the embodiment of content according to the present invention, it will be evident that can be via systematically changing phase
The design of the periodic arrangement pattern of optical grating construction, with the appearance color of modulation semiconductor sensing device.
More specifically, the embodiment of content according to the present invention, the appearance color to modulation semiconductor sensing device
Phase grating structure can complete in a step, and have high accurancy and precision, do not need to carry out repeatedly to make work
Skill step (e.g. Multiple depositions step) to form multilayer film can achieve the effect that specific appearance color is presented.Therefore,
The manufacturing process steps of semiconductor sensing device can simplify, and the precision of process for integrally manufacturing can also be promoted.
Although being not limited to this hair in conclusion the above preferred embodiment has been combined to disclose the present invention
It is bright.Skilled person in the technical field of the invention, without departing from the spirit and scope of the present invention, can make it is various more
Dynamic and retouching.Therefore, protection scope of the present invention should be subject to what the appended claims were defined.
Claims (11)
1. a kind of semiconductor sensing device, comprising:
Multiple pixels；
Flatness layer is formed in those pixels；
Passivation layer is formed on the flatness layer；
Lid oxide layer is formed on the passivation layer；
Nitride layer is formed in the lid oxide layer；And
Protective layer is formed on the nitride layer, which includes at least oxide layer and at least one another nitridation stacked
Nitride layer；
Wherein the semiconductor sensing device further includes phase grating structure (phase grating structure), the phase light
Grid structure is set in those pixels, which has multiple periodic arrangement pattern (periodically
Arranged patterns), the height of the phase grating structure can modulation, with the appearance face of the modulation semiconductor sensing device
Color.
2. semiconductor sensing device as described in claim 1, wherein the phase grating structure has by multiple protrusions
(protrusions) one first area constituted and one second area being made of multiple recess (indentations), those weeks
Phase property arrangement pattern is those protrusions or those recess.
3. semiconductor sensing device as claimed in claim 2, the wherein refractive index of the refractive index in firstth area and secondth area
It is different.
4. semiconductor sensing device as described in claim 1, wherein those periodic arrangement patterns have irregular height.
5. semiconductor sensing device as described in claim 1, wherein those periodic arrangement patterns further include at least two groups not
Same periodic patterns.
6. semiconductor sensing device as described in claim 1, wherein those periodic arrangement patterns are polygon pattern, circle
Pattern, pattern of oval shapes, strip pattern, hollow pattern, trellis pattern or saw-tooth like pattern.
7. semiconductor sensing device as described in claim 1, wherein those periodic arrangement patterns are to be in alignment with each other and have
Consistent size and shape.
8. semiconductor sensing device as described in claim 1, wherein those periodic arrangement patterns are formed in the passivation layer, are somebody's turn to do
In at least one of lid oxide layer and the nitride layer.
9. semiconductor sensing device as described in claim 1, wherein those periodic arrangement patterns are formed in at least protection
In layer.
10. semiconductor sensing device as described in claim 1, wherein those pixels have about 60 microns x60 microns of a ruler
It is very little.
11. semiconductor sensing device as described in claim 1, wherein the phase grating structure is with multiple holes or multiple
One film layer in channel, those holes or those channels are those periodic arrangement patterns.
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| KR20100079452A (en) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | Image sensor |
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| JP2013038164A (en) * | 2011-08-05 | 2013-02-21 | Sony Corp | Solid state image pickup device and electronic apparatus |
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| US5539206A (en) * | 1995-04-20 | 1996-07-23 | Loral Vought Systems Corporation | Enhanced quantum well infrared photodetector |
| CN1404158A (en) * | 2001-08-30 | 2003-03-19 | 联华电子股份有限公司 | Making process of phase grating image sensor |
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| EP2180512A2 (en) * | 2008-10-24 | 2010-04-28 | Thales | Polarimetric imaging device optimised in relation to polarisation contrast |
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