CN104698552A - Optical interconnection substrate applied to spacecraft and military computer and manufacturing method thereof - Google Patents
Optical interconnection substrate applied to spacecraft and military computer and manufacturing method thereof Download PDFInfo
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- CN104698552A CN104698552A CN201510114954.XA CN201510114954A CN104698552A CN 104698552 A CN104698552 A CN 104698552A CN 201510114954 A CN201510114954 A CN 201510114954A CN 104698552 A CN104698552 A CN 104698552A
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Abstract
The invention discloses an optical interconnection substrate applied to a spacecraft and a military computer and a manufacturing method thereof. The optical interconnection substrate comprises a transmitting component, a receiving component and an LTCC (Low Temperature Co Fired Ceramic) substrate provided with a cavity, the cavity of the LTCC substrate is internally provided with a single side polished silicon wafer, and a polishing surface of the silicon wafer is provided with a composite waveguide; one end of the composite waveguide is provided with a first reflector, and the other end of the composite waveguide is provided with a second reflector; another side of the LTCC substrate is assembled with a VCSEL (Vertical Cavity Surface Emitting Laser) device in the transmitting component and a PD (Potential Difference) device in the receiving component, a first micro-lens array is arranged between the VCSEL device and the first reflector, and a second micro-lens array is arranged between the PD device and the second reflector. The LTCC optical interconnection substrate provided by the invention has the characteristics of being smaller in volume, lighter in weight and higher in integration density, thereby being applicable to manufacturing the spacecraft and the military computer, and being easier to realize an assembling process of a photoelectric component.
Description
Technical field
The invention belongs to hybrid semiconductor integrated circuit technical field, be specifically related to a kind of light network substrate on spacecraft and military computer and manufacture method thereof.
Background technology
Along with digitized process, the process of data, storage and transmission obtain development at full speed.Play the lifting of warship star ship performance, also more and more higher to the requirement of data transmission capabilities, an urgent demand is carried out in real time the complex information from each side, high speed acquisition, data processing and automatically control.As the observation to high-speed motion or instant of short duration process, record, display and storage; To the identification of the shape and size of the two and three dimensions object of complexity, accurately measure; To macroscopic view or the analysis of superfine graph and interpretation.Realize payload data disposal system high speed, universalization and configuration more flexible, need at a high speed, the high-speed interconnect method of highly reliable, low-power consumption.The demand of high bandwidth short interconnections the is become bottleneck of System Development.Affect by the factor such as loss and crosstalk, the transmission range of electrical interconnection in high bandwidth situation based on copper cash is restricted, and cost also rises thereupon.Compared with electrical interconnection, light network has high bandwidth, low-loss, without crosstalk and the advantage such as coupling and electromagnetic compatibility, starts to be widely used in the high-speed interconnect between rack room, framework and between plate.
Photoelectron technology can realize high I/O terminal number (I/O) and be suitable for the three-dimensional light electrical interconnection of parallel processing, and data exchange capability is that traditional integrated circuit is incomparable.The application of photoelectron technology significantly can promote the data exchange capability of spacecraft and military computer, is once challenge greatly to traditional circuit concept.
Domestic and international light network substrate, substantially all based on pcb board, yet there are no the light network technology manufactured based on ltcc substrate.
Summary of the invention
For the deficiencies in the prior art and Problems existing, the object of this invention is to provide a kind of light network substrate on spacecraft and military computer and manufacture method thereof, it has, and volume is little, lightweight, integrated level advantages of higher, is applicable to the inner photoelectric signal transformation of hybrid circuit used on spacecraft and military computer and high speed transmission of signals.
For achieving the above object, the present invention adopts following technical scheme:
A light network substrate on spacecraft and military computer, comprises the ltcc substrate that the first catoptron, the second catoptron, the first microlens array, the second microlens array, emitting module, receiving unit, the silicon chip of single-sided polishing and side offer cavity; Wherein, emitting module is integrated with VCSEL device, VCSEL interface card and drive circuit chip; Receiving unit is integrated with PD device, PD interface card, drive circuit chip; Be provided with the silicon chip of single-sided polishing in the cavity of described ltcc substrate, the polished surface of the silicon chip of single-sided polishing is provided with composite waveguide; One end of composite waveguide arranges the first catoptron, and the other end arranges the second catoptron;
Emitting module, receiving unit are assembled in the opposite side of ltcc substrate, and the opposite side of ltcc substrate is offered porose, VCSEL device and PD device are assembled in the opposite side tapping of ltcc substrate, first microlens array is set between VCSEL device and the first catoptron, between PD device and the second catoptron, is provided with the second microlens array; The light beam that VCSEL device vertically excites is through passing the first microlens array behind hole, injecting composite waveguide through the first catoptron horizontal reverse, light beam horizontal transport after composite waveguide total reflection transmission gives the second catoptron, the second microlens array is entered by the second catoptron vertical reflection, final beam through the second microlens array, enter in PD device through hole, realizes light network.
The surfaceness in the silicon wafer polishing face of described single-sided polishing is less than
The waveguide core layer that described composite waveguide comprises clad, lower clad and is arranged between clad, lower clad.
Described waveguide core layer material is SU-8, and upper clad, lower clad material are PDMS.
The reflecting surface of described first catoptron, the second catoptron deposits Al or Au.
Described first catoptron and the second catoptron are all bonded on the silicon chip of single-sided polishing by bonding agent; VCSEL device and PD device are bonded on ltcc substrate by bonding agent.
A manufacture method for light network substrate on spacecraft and military computer, comprises the following steps:
1) composite waveguide is manufactured:
First on the silicon chip of monolithic polishing, composite waveguide is made, the waveguide core layer that composite waveguide comprises clad, lower clad and is arranged between clad, lower clad, wherein, the wide of waveguide core layer is 10 μm, height is 10 μm, long is 20mm, and the thickness of upper clad and lower clad is 60 μm;
2) catoptron is manufactured:
First catoptron and the second catoptron are assembled on silicon chip, and the first catoptron and the second catoptron lay respectively at the two ends of composite waveguide;
3) ltcc substrate is begun to speak, is punched:
Offer step-like cavity in ltcc substrate side, and punch at ltcc substrate opposite side;
4) silicon chip with composite waveguide is bonded in the cavity of ltcc substrate by bonding agent; Emitting module and receiving unit are assembled into the opposite side of ltcc substrate, wherein, emitting module is integrated with VCSEL device, VCSEL interface card and drive circuit chip; Receiving unit is integrated with PD device, PD interface card, drive circuit chip; First microlens array is set between VCSEL device and the first catoptron, the second microlens array is set between PD device and the second catoptron; The light beam passing hole that VCSEL device is launched vertically is injected in the first microlens array, by the first microlens array directive first catoptron, beam level is injected in composite waveguide by the first catoptron, through beam level directive second catoptron of composite waveguide, inject the second microlens array by the second catoptron, light beam is injected in PD device by the second microlens array.The concrete preparation method of described first catoptron and the second catoptron is as follows: in <100> crystal orientation and the tow sides that thickness is the twin polishing silicon chip of 500 μm by LPCVD deposit thickness be
si
3n
4, as mask during corrosion, then adopt negative-working photoresist on silicon chip, make figure to be etched, then etch Si by plasma etching technology
3n
4, wet etching produces reflecting surface, then adopts phosphoric acid to remove the double-edged Si of silicon chip
3n
4, obtain the first catoptron and the second catoptron; The reflecting surface of the first catoptron and the second catoptron deposits Al or Au; Described step 3) in waveguide core layer material be SU-8, upper clad, lower clad material are PDMS.
Described waveguide core layer obtains by the following method: first, by after backing material Wafer Cleaning prior to glue 10s even under 500rpm rotating speed, then under 3000rpm rotating speed even glue 30s, then at 70 DEG C, carry out front baking 5min, then in 270W, light intensity be 2.7mW/cm
2toast at 70 DEG C after lower exposure 380s, then develop 30s, and last 98 DEG C of baking-curing 5min, obtain waveguide core layer SU-8.
Described step 2) the middle reacting gas CF etching employing
4and O
2, and CF
4, O
2flow be respectively 65sccm, 38sccm, etching power is 100W, and the corrosive liquid of employing is the mixed solution of KOH, DI water, isopropyl alcohol, and KOH:DI water: isopropyl alcohol=200g:400mL:40mL.
Compared with prior art, the beneficial effect that has of the present invention:
The present invention by offering cavity in ltcc substrate side, and arranges composite waveguide on the polished surface of silicon chip, and the first catoptron is set in one end of composite waveguide, the other end arranges the second catoptron, the tapping assembling VCSEL device of the opposite side of ltcc substrate and PD device, and the first microlens array is set between VCSEL device and the first catoptron, second microlens array is set between PD device and the second catoptron, the light beam that VCSEL device is vertically excited passes the first microlens array through behind hole, composite waveguide is injected through the first catoptron horizontal reverse, light beam horizontal transport after composite waveguide total reflection transmission gives the second catoptron, the second microlens array is entered by the second catoptron vertical reflection, final beam is through the second microlens array, enter in PD device through hole, realize light network.The advantages such as compared with interconnecting with traditional electrical, light network has that transfer rate is fast, high bandwidth, no signal crosstalk and electromagnetic compatibility; Compared with PCB light network substrate, LTCC light network substrate of the present invention has the advantages that volume is little, lightweight, integration density is higher, is applicable to very much manufacturing being used for spacecraft and military computer, and more easily realizes the packaging technology with photoelectric subassembly.
Further, the surfaceness in the silicon wafer polishing face of single-sided polishing is less than
be convenient to the manufacture of small size composite waveguide.
Further, waveguide core layer material is SU-8, and upper clad, lower clad material are PDMS, and such material is convenient to the total reflection transmission of light in composite waveguide.
Further, the reflecting surface due to the first catoptron, the second catoptron deposits Al or Au, absorb and scattering loss so light wave can be reduced, and then strengthen reflection.
The present invention forms composite waveguide by making clad, lower clad and waveguide core layer on the silicon chip of single-sided polishing, then the first catoptron and the second catoptron are set on the silicon chip of single-sided polishing, make the first catoptron and the second catoptron lay respectively at the two ends of composite waveguide; Step-like cavity is offered in ltcc substrate side, punch at ltcc substrate opposite side, then the silicon chip with composite waveguide is bonded in the cavity of ltcc substrate by bonding agent, at ltcc substrate opposite side assembling emitting module and receiving unit, obtain light network substrate, achieve the light network on ltcc substrate, preparation method of the present invention is simple, easily realizes; The light network substrate of simultaneously manufacture of the present invention can realize the interconnection of chip to chip, significantly improves transmission bandwidth and transfer rate, meets modern national defense and military weapon to the demand of high speed data transfer, has important national defence and military significance.
Further, adding isopropyl alcohol in corrosive liquid when manufacturing catoptron is to be corroded surface topography in order to control corrosion rate speed and improvement, improves surface smoothness.
Accompanying drawing explanation
Fig. 1 is ltcc substrate optical interconnected structure schematic diagram of the present invention.
Fig. 2 is optical interconnection system theory diagram.
Fig. 3 is the process chart for the manufacture of waveguide core layer.
Fig. 4 is the process chart for the manufacture of ltcc substrate of beginning to speak.
Fig. 5 is that ltcc substrate is begun to speak schematic cross-section.
Fig. 6 is the vertical view of the first catoptron.
Fig. 7 is the cut-open view along A-A in Fig. 6.
In figure, 1 is ltcc substrate, and 2 is silicon chip, and 3 is waveguide core layer, and 4 is upper clad, 5 is lower clad, and 6 is the second catoptron, and 7 is the first catoptron, 8 is microlens array, and 9 is bonding agent, and 10 is VCSEL device, 11 is PD device, and 12 is drive circuit chip, and 13 is passive element, 14 is transmission line, and 15 is microcontroller, and 16 is trans-impedance amplifier, 17 is the first power filter, and 18 is second source filtering, and 19 is composite waveguide.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, describe technical solution of the present invention in detail below in conjunction with accompanying drawing.
See Fig. 1, a kind of light network substrate on spacecraft and military computer, comprise the ltcc substrate 1 that the first catoptron 7, second catoptron 6, first microlens array 8-1, the second microlens array 8-2, emitting module, receiving unit, the silicon chip 2 of single-sided polishing and side offer cavity, wherein, emitting module is integrated with VCSEL device 10, VCSEL interface card and drive circuit chip 12; Receiving unit is integrated with PD device 11, PD interface card, drive circuit chip; Be provided with the silicon chip 2 of single-sided polishing in the cavity of described ltcc substrate 1, the surfaceness of the polished surface of silicon chip 2 is less than
and the polished surface of silicon chip is provided with composite waveguide 19, the waveguide core layer 3 that composite waveguide 19 comprises clad 4, lower clad 5 and is arranged between clad 4, lower clad 5, upper clad 4, lower clad 5 and waveguide core layer 3 is three one polymer films, three one polymer membrane structures are specially PDMS/SU-8/PDMS, waveguide core layer 3 material is SU-8, and upper clad 4, lower clad 5 material are PDMS; One end of composite waveguide 19 arranges the first catoptron 7, and the other end arranges the second catoptron 6, first catoptron 7 and the second catoptron 6 is all bonded on the silicon chip 2 of single-sided polishing by bonding agent 9.
The opposite side of ltcc substrate 1 is offered porose, and VCSEL device 10 and PD device 11 are assembled in the tapping of the opposite side of the ltcc substrate 1 offering cavity, VCSEL device 10 and PD device 11 are bonded in ltcc substrate 1 by bonding agent, and be oppositely arranged with hole, in addition, VCSEL device 10 and PD device 11 interval are arranged; Between VCSEL device 10 and the first catoptron 7, the first microlens array 8-1 is set, the second microlens array 8-2 is provided with between PD device 11 and the second catoptron 6, the light beam that VCSEL device 10 vertically excites is through the first microlens array 8-1, the waveguide core layer 3 injecting composite waveguide 19 through the first catoptron 7 horizontal reverse, light beam horizontal transport after waveguide core layer 3 total reflection transmission gives the second catoptron 6, the second microlens array 8-2 is entered by the second catoptron 6 vertical reflection, final beam is entered in PD device 11 by the second microlens array 8-2, realizes the interconnection of light.
The reflecting surface of the first catoptron 7, second catoptron 6 described in the present invention deposits Al or Au, because the first catoptron 7, second catoptron 6 is assembled in composite waveguide 19 two ends, absorb and scattering loss for reducing light wave, depositing Al or the reflection of Au Material reinforcement on the reflecting surface of catoptron.
According to actual needs, ltcc substrate 1 can arrange passive element 13, passive element 13 is specifically as follows resistance or electric capacity.
General design idea of the present invention is: on semi-conductor silicon chip, manufacture composite waveguide 19 and catoptron, ltcc substrate is begun to speak, punches, photoelectric subassembly and the driving circuits such as assembling composite waveguide 19, first catoptron, the second catoptron, the first microlens array, the second microlens array, VCSEL device, PD device, realize the light network on ltcc substrate.
See Fig. 1, this LTCC light network substrate overall framework schematic diagram is the topology layout schematic diagram of chip to the optical interconnection system of chip.Within the system, low-frequency electric signal is transmitted by traditional transmission line 14 (i.e. metal wire) electrical interconnection, and high-frequency light signal then carries out light network transmission by composite waveguide 19.
The present invention can realize the interconnection of chip to chip, and detailed process is: the high speed signal that IC chip sends, by the transmission line 14 of ltcc substrate 1, is sent to the drive circuit chip 12 of VCSEL; Driving circuit on drive circuit chip 12 is luminous by modulation VCSEL device, and the electric signal sent of IC chip is changed into light signal; Light signal is coupled to by microlens array in the composite waveguide being assembled into ltcc substrate 1 and transmits; At composite waveguide output terminal, light signal is coupled in PD device by microlens array; PD device converts light signal to electric signal.
In the present invention, emitting module is integrated with VCSEL chip, VCSEL interface card and drive circuit chip 12.Receiving unit is integrated with PD chip, PD interface card, drive circuit chip etc.
The present invention is by a laser array and driving chip, a detector and form across resistance amplifying circuit, reception and radiating portion power-supply filter and optical waveguide, is divided into emitting module and receiving unit two parts.Emitting module is formed primarily of a 850nm vertical cavity surface emitting laser (VCSEL) and driving chip 12 thereof, receiving unit is formed primarily of a photodetector (Photodiode, PD) and trans-impedance amplifier (TIA) 16 thereof.
VCSEL device and these two optical devices of PD device are assembled on silica-based slide glass by technique for sticking by the present invention respectively, then driving circuit is assembled on ltcc substrate, fit together with the silica-based slide glass of laser instrument and driving circuit, realize VCSEL and driver interconnects, use the same method and realize PD and trans-impedance amplifier 16 interconnects, realize electric interconnection finally by bonding technology.System principle diagram is shown in Fig. 2.Be provided with the microcontroller 15 be connected with driving circuit, TIA respectively between driving circuit with TIA, driving circuit is also connected with second source wave filter 18, TIA and is connected with the first power-supply filter 17.
LTCC light network manufacture of substrates of the present invention, comprises the following steps:
1) composite waveguide manufacturing process:
Composite waveguide is made up of three layers of organic polymer material, first three layers of organic polymer are made at the front side of silicon wafer of single-sided polishing, the membrane structure of three layers of organic polymer is PDMS/SU-8/PDMS, SU-8 is as middle waveguide core layer 3, PDMS is shown in Fig. 3 as the manufacturing process flow of upper clad 4, lower clad 5, waveguide core layer SU-8.Described waveguide core layer 3 obtains by the following method: first, prior to glue 10s even under 500rpm rotating speed after backing material silicon chip is cleaned, then under 3000rpm rotating speed even glue 30s, then at 70 DEG C, carry out front baking 5min, then in 270W, light intensity 2.7mW/cm
2at 70 DEG C, toast 10min after lower exposure 380s, then develop 30s, finally in 98 DEG C of baking-curing 5min, obtains waveguide core layer SU-8.
After manufacture completes, gained waveguide core layer is of a size of 10 μm × 10 μm × 20mm (wide × high × long), and the thickness of upper clad and lower clad is 60 μm.
2) catoptron manufacturing process:
First catoptron 7 and the second catoptron 6 are assembled in composite waveguide 19 two ends, absorb and scattering loss for reducing light wave, the light beam vertically excited by VCSEL device horizontal reverse after the incident micro lens of the first microlens array 8-1 injects the waveguide core layer 3 of composite waveguide 19, light beam is totally reflected after transmission through waveguide core layer 3 and penetrates from another end face, be reflected into the second microlens array 8-2 through the second catoptron 6, finally received by PD device;
The present invention adopts wet etch techniques to manufacture the second catoptron 6 and the first catoptron 7.Select twin polishing silicon chip, < 100 > crystal orientation, thickness is 500 μm.Silicon chip tow sides are by LPCVD deposit Si
3n
4, thickness is
as mask during corrosion.Make figure to be etched with negative-working photoresist, the figure concrete shape to be etched in the present invention is groined type, and line thickness is 500 μm ~ 1000 μm, and spacing is 3mm.Etching Si
3n
4time etching reacting gas be CF
4and O
2, CF
4, O
2gas flow be respectively 65sccm, 38sccm, etching power is 100W.The corrosive liquid adopted in wet etch techniques is the mixed solution of KOH, DI water, isopropyl alcohol, adopt anisotropic etch, KOH:DI water: isopropyl alcohol=200g:400mL:40mL, different ratio determines different corrosion rates, the temperature of corrosive liquid is 85 DEG C, and is realized by heating water bath.Adding isopropyl alcohol in corrosive liquid is to be corroded surface topography in order to control corrosion rate speed and improvement, improves surface smoothness.
The phosphoric acid of 80 DEG C is adopted to remove double-edged Si after corrosion
3n
4.Si mirror completes, and obtains the first catoptron 7 and the second catoptron 6.See Fig. 6 and Fig. 7, first catoptron 7 is identical with the structure of the second catoptron 6, and the first catoptron 7 and the second catoptron 6 are square sheets, and the length of side is 3mm, thickness is about 500 μm, and four sides of the first catoptron 7 are the inclined-plane horizontal by 45° angle.
3) ltcc substrate begin to speak, drilling technology:
Begun to speak by green, lamination, lamination, SINTERING TECHNOLOGY, complete and offer step-like cavity in ltcc substrate 1 side, and ltcc substrate opposite side after sintering adopts laser to punch, realize ltcc substrate being assembled composite waveguide 19 and the photoelectric subassembly such as the first microlens array 8-1, the second microlens array 8-2, form optical interconnected structure.
In the present invention, the length of composite waveguide 19 is 20mm, and Fig. 4 is shown in the technological process of embed the object of ltcc substrate for reaching, ltcc substrate is begun to speak, punching, first, ceramic chips punches, in the through hole formed, fills conductor paste, then carry out conductor printing, green begins to speak, then vacuum seal is carried out after some ceramic chips being arranged lamination, then by green lamination, carry out low temperature co-fired after finally green being cut, obtain the ltcc substrate having cavity.Ltcc substrate begins to speak schematic cross-section as shown in Figure 5.
4) silicon chip with composite waveguide is bonded in the cavity of ltcc substrate by bonding agent, first catoptron 7, second catoptron 6 is assembled on silicon chip 2, and the first catoptron 7 is positioned at one end of composite waveguide, the second catoptron 6 is positioned at the other end of composite waveguide; First microlens array 8-1 is set between VCSEL device 10 and the first catoptron 7, the second microlens array 8-2 is set between PD device 11 and the second catoptron 6; VCSEL device 10 and PD device 11 are bonded in ltcc substrate 1 opposite side by bonding agent, the light beam passing hole that VCSEL device 10 is launched vertically is injected in the first microlens array 8-1, after the first catoptron reflection, level is injected in composite waveguide 19, through composite waveguide 19 light beam again through second catoptron reflection after, received by PD device through the second microlens array.
The present invention by first manufacturing composite waveguide on silicon chip, and composite waveguide end face cuts through excimer laser, and performance reaches transmission requirement, and scribing is separated; Silicon slice corrosion method manufactures the first catoptron and the second catoptron, is fixed on composite waveguide two ends after surface metalation through technique for sticking; Ltcc substrate is begun to speak punching, bonding first microlens array on the composite waveguide completed and the first catoptron, and bonding second microlens array on composite waveguide and the second catoptron, is assembled on ltcc substrate through technique for sticking; As shown in Figure 1, the first microlens array and the second microlens array include the lenticule being arranged on ltcc substrate and on silicon chip, and the hole that the lenticule on the lenticule that ltcc substrate is assembled, waveguide and ltcc substrate opposite side are offered is coupled and aligned; Ltcc substrate another side is assembled emitting module, receiving unit and passive element 13, complete electric interconnection by transmission line 14.
The present invention adopts composite waveguide and catoptron manufacture on silicon chip, and through the photoelectric subassemblys such as VCSEL, PD and driving circuit assembling, micro lens is coupled, and ltcc substrate achieves light network.The present invention has the advantages that volume is little, lightweight, integration density is high, spacecraft and military computer can be used in, significantly improve transmission bandwidth and transfer rate, meet modern national defense and military weapon to the demand of high speed data transfer, there is important national defence and military significance.
Claims (10)
1. the light network substrate on spacecraft and military computer, it is characterized in that, comprise the ltcc substrate (1) that the first catoptron (7), the second catoptron (6), the first microlens array (8-1), the second microlens array (8-2), emitting module, receiving unit, the silicon chip (2) of single-sided polishing and side offer cavity; Wherein, emitting module is integrated with VCSEL device (10), VCSEL interface card and drive circuit chip; Receiving unit is integrated with PD device (11), PD interface card, drive circuit chip; Be provided with the silicon chip (2) of single-sided polishing in the cavity of described ltcc substrate (1), the polished surface of the silicon chip (2) of single-sided polishing is provided with composite waveguide (19); One end of composite waveguide (19) arranges the first catoptron (7), and the other end arranges the second catoptron (6);
Emitting module, receiving unit are assembled in the opposite side of ltcc substrate (1), and the opposite side of ltcc substrate (1) is offered porose, VCSEL device (10) and PD device (11) are assembled in the opposite side tapping of ltcc substrate (1), first microlens array (8-1) is set between VCSEL device (10) and the first catoptron (7), between PD device (11) and the second catoptron (6), is provided with the second microlens array (8-2); The light beam that VCSEL device (10) vertically excites is through passing the first microlens array (8-1) behind hole, injecting composite waveguide (19) through the first catoptron (7) horizontal reverse, light beam horizontal transport after composite waveguide (19) total reflection transmission gives the second catoptron (6), the second microlens array (8-2) is entered by the second catoptron (6) vertical reflection, final beam through the second microlens array (8-2), enter in PD device (11) through hole, realizes light network.
2. the light network substrate on spacecraft and military computer according to claim 1, is characterized in that, the surfaceness of silicon chip (2) polished surface of described single-sided polishing is less than
3. the light network substrate on spacecraft and military computer according to claim 1, it is characterized in that, the waveguide core layer (3) that described composite waveguide (19) comprises clad (4), lower clad (5) and is arranged between clad (4), lower clad (5).
4. the light network substrate on spacecraft and military computer according to claim 3, it is characterized in that, described waveguide core layer (3) material is SU-8, and upper clad (4), lower clad (5) material are PDMS.
5. the light network substrate on spacecraft and military computer according to claim 1, is characterized in that, the reflecting surface of described first catoptron (7), the second catoptron (6) deposits Al or Au.
6. the light network substrate according to claim 1 or 5 on spacecraft and military computer, it is characterized in that, described first catoptron (7) and the second catoptron (6) are all bonded on the silicon chip (2) of single-sided polishing by bonding agent (9); VCSEL device (10) and PD device (11) are bonded on ltcc substrate (1) by bonding agent.
7. a manufacture method for the light network substrate on spacecraft and military computer, is characterized in that, comprise the following steps:
1) composite waveguide is manufactured:
First on the silicon chip (2) of monolithic polishing, composite waveguide (19) is made, the waveguide core layer (3) that composite waveguide (19) comprises clad (4), lower clad (5) and is arranged between clad (4), lower clad (5), wherein, the wide of waveguide core layer (3) is 10 μm, height is 10 μm, long is 20mm, and the thickness of upper clad (4) and lower clad (5) is 60 μm;
2) catoptron is manufactured:
First catoptron (7) and the second catoptron (6) are assembled on silicon chip (2), and the first catoptron (7) and the second catoptron (6) lay respectively at the two ends of composite waveguide (19);
3) ltcc substrate is begun to speak, is punched:
Offer step-like cavity in ltcc substrate side, and punch at ltcc substrate opposite side;
4) silicon chip with composite waveguide (19) is bonded in the cavity of ltcc substrate by bonding agent; Emitting module and receiving unit are assembled into the opposite side of ltcc substrate, wherein, emitting module is integrated with VCSEL device (10), VCSEL interface card and drive circuit chip; Receiving unit is integrated with PD device (11), PD interface card, drive circuit chip; First microlens array (8-1) is set between VCSEL device (10) and the first catoptron (7), the second microlens array (8-2) is set between PD device (11) and the second catoptron (6); The light beam passing hole that VCSEL device (10) is launched vertically is injected in the first microlens array (8-1), by the first microlens array (8-1) directive first catoptron (7), beam level is injected in composite waveguide (19) by the first catoptron (7), through beam level directive second catoptron (6) of composite waveguide (19), inject the second microlens array (8-2) by the second catoptron (6), light beam is injected in PD device (11) by the second microlens array (8-2).
8. the manufacture method of the light network substrate on spacecraft and military computer according to claim 7, it is characterized in that, the concrete preparation method of described first catoptron (7) and the second catoptron (6) is as follows: in <100> crystal orientation and the tow sides that thickness is the twin polishing silicon chip of 500 μm by LPCVD deposition thickness be
si
3n
4, as mask during corrosion, then adopt negative-working photoresist on silicon chip, make figure to be etched, then etch Si by plasma etching technology
3n
4, wet etching produces reflecting surface, then adopts phosphoric acid to remove the double-edged Si of silicon chip
3n
4, obtain the first catoptron (7) and the second catoptron (6); First catoptron (7) and the reflecting surface of the second catoptron (6) deposit Al or Au; Described step 3) in waveguide core layer (3) material be SU-8, upper clad (4), lower clad (5) material are PDMS.
9. the manufacture method of the light network substrate on spacecraft and military computer according to claim 8, it is characterized in that, described waveguide core layer (3) obtains by the following method: first, by after backing material Wafer Cleaning prior to glue 10s even under 500rpm rotating speed, even glue 30s under 3000rpm rotating speed again, then at 70 DEG C, carry out front baking 5min, then in 270W, light intensity be 2.7mW/cm
2toast at 70 DEG C after lower exposure 380s, then develop 30s, and last 98 DEG C of baking-curing 5min, obtain waveguide core layer SU-8.
10. the manufacture method of the light network substrate on spacecraft and military computer according to claim 7, is characterized in that, described step 2) the middle reacting gas CF etching employing
4and O
2, and CF
4, O
2flow be respectively 65sccm, 38sccm, etching power is 100W, and the corrosive liquid of employing is the mixed solution of KOH, DI water, isopropyl alcohol, and KOH:DI water: isopropyl alcohol=200g:400mL:40mL.
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