CN104677407A - Fault detection circuit applied to photoelectric direct reading register and detection method of fault detection circuit - Google Patents
Fault detection circuit applied to photoelectric direct reading register and detection method of fault detection circuit Download PDFInfo
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- CN104677407A CN104677407A CN201510081308.8A CN201510081308A CN104677407A CN 104677407 A CN104677407 A CN 104677407A CN 201510081308 A CN201510081308 A CN 201510081308A CN 104677407 A CN104677407 A CN 104677407A
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Abstract
The invention provides a fault detection circuit applied to a photoelectric direct reading register. The fault detection circuit comprises a plurality of groups of emission circuits and an MCU, wherein each group of emission circuits comprises an emission completion circuit and an emission fault detection circuit; each emission completion circuit comprises a light emitting diode and a first emission circuit resistor; each emission fault detection circuit comprises a second emission circuit resistor; the identification enabling pin CODEA of the MCU is connected with the negative electrode of the light emitting diode; the output pin L of the MCU is connected with the positive electrode of the light emitting diode through the first emission circuit resistor; the digital-to-analog conversion circuit pin A/D of the MCU is connected with the positive electrode of the light emitting diode through the second emission circuit resistor. The invention further provides a detection method of the fault detection circuit applied to the photoelectric direct reading register. The detection method comprises an emission fault detection method and a receiving fault detection method. The fault detection circuit applied to the photoelectric direct reading register and the detection method of the fault detection circuit, which are provided by the invention, are quick in fault detection response and accurate in fault finding position.
Description
Technical field
Design error failure testing circuit of the present invention and detection method thereof, especially relate to and a kind ofly to check meter the failure detector circuit being applied to photo-electronic directly reading register in field and detection method thereof at intellectual water meter, intelligent gas meter.
Background technology
Photo-electronic directly reading register is widely used in the intelligent meter data recording system of water meter, gas meter, flow meter, photo-electronic directly reading register can form the kilowatt meter reading-out system of different characteristic, wired meter reading system, wireless kilowatt meter reading-out system, movement (GSM/GPRS) kilowatt meter reading-out system with various communication mode.Photo-electronic directly reading register is exactly the Recognition of Reading system consisted of light emitting diode (LED), light path, the character wheel of band coding, photosensitive receiving tube, convert the mechanical reading of water meter, gas meter, flow meter to electronical reading, one of parts basic, the most most crucial in kilowatt meter reading-out system, it is whether accurate that its reading is changed, being directly connected to the economic interests of tap water, gas supply side, Demand-side both sides, is also the necessary means ensureing fair trade.
Due to electron device performance discreteness and later stage ageing failure, light emitting diode, photosensitive receiving tube often there will be the fault such as short circuit, open circuit.The photo-electronic directly reading register of current use, these faults are not comprehensively detected, when making photo-electronic directly reading register occur this type of fault, mechanical reading can only be converted to a wrong electronical reading, the reading of this mistake is used to trade settlement, will trade dispute be produced, difficulty is added to the management of tap water, gas company.
Summary of the invention
In order to solve the problem, the invention provides a kind of failure detector circuit and the detection method thereof that are applied to photo-electronic directly reading register.A kind of failure detector circuit and detection method thereof being applied to photo-electronic directly reading register provided by the invention, fault detect response is fast, finds that fault place is accurate.
The technical solution used in the present invention is as follows:
A kind of failure detector circuit being applied to photo-electronic directly reading register, comprise some groups of radiating circuits, MCU, described radiating circuit of often organizing comprises transmitting completing circuit, launching failure testing circuit, described transmitting completing circuit comprises light emitting diode, first launches road resistance, described launching failure testing circuit comprises the second transmitting road resistance, the identification enable pin CODEA of described MCU is connected with the negative pole of light emitting diode, the output pin L of described MCU launches road resistance by first and is connected with the positive pole of light emitting diode, the D/A converting circuit pin A/D of described MCU launches road resistance by second and is connected with the positive pole of light emitting diode, the transmitting completing circuit of described some groups of radiating circuits is in parallel, the launching failure testing circuit of described some groups of radiating circuits is in parallel.
Above-mentioned a kind of failure detector circuit being applied to photo-electronic directly reading register, wherein, also comprise one group of receiving circuit, described receiving circuit comprises photosensitive receiving tube, the input pin INA of described MCU is connected with the negative pole of photosensitive receiving tube, and the positive pole of described photosensitive receiving tube is connected with the output pin OUT pin of MCU.
Above-mentioned a kind of failure detector circuit being applied to photo-electronic directly reading register, wherein, described radiating circuit has five groups.
Be applied to a detection method for the failure detector circuit of photo-electronic directly reading register, comprise launching failure detection method, comprise the steps:
S11, photo-electronic directly reading register starts reading;
S12, MCU first being put CODEA pin is low level, and putting L pin is high level, now, voltage is full value voltage, and " A/D pin " interface of MCU launches by first the positive pole that road resistance is connected to light emitting diode, is used for detecting the voltage Vd of light emitting diode positive pole; When light emitting diode normally works, Vd=operating voltage; When light-emitting diodes tube short circuit, Vd=0V; When light emitting diode open circuit, Vd=full value voltage;
S13, judges light emitting diode whether fault: MCU is changed by A/D, detects the voltage of light emitting diode positive pole, and when detecting that Vd is 0V or 3.3V, MCU will will be set to character " F " in the reading of photo-electronic directly reading register corresponding positions;
S14, when kilowatt meter reading-out system finds that the character of non-arabic numeral appears in the reading of certain water meter or gas meter, flow meter, namely breaks down.
Above-mentioned a kind of detection method being applied to the failure detector circuit of photo-electronic directly reading register, also comprises reception fault detection method, comprises the steps:
S21, photo-electronic directly reading register starts reading; MCU first puts " OUT " is high level, and " CODEA " is low level, carries out numeral identify certain character wheel in photo-electronic directly reading register;
S22, certain character wheel corresponding, these character wheel both sides are provided with luminous light guide sheet and receive light guide sheet, and certain the L pin arranged in five groups of radiating circuits corresponding to this character wheel is high level, light corresponding light emitting diode, the light that light emitting diode sends, received to reception light guide sheet by luminous light guide sheet, if light injects photosensitive receiving tube by accepting light guide sheet, then photosensitive receiving tube conducting, " INA pin " is high level, and MCU identifies that corresponding L pin is " 1 "; If light does not inject photosensitive receiving tube by receiving light guide sheet, photosensitive receiving tube ends, and " INA " is low level, and MCU identifies that corresponding L pin is " 0 ";
S23, photo-electronic directly reading register, from half carry corresponding between numerical value " 0-9 " and every two numerical value, needs 20 kinds of codings altogether, arranges " 0 " and " 1 " containing varying number in each coding;
S24, judges photosensitive receiving tube whether fault: when MCU carries out obtaining corresponding being " 0 " of all L pins, then photosensitive receiving tube generation open circuit fault after numeral identifies to five of a character wheel groups of radiating circuits; When MCU to carry out five of a character wheel groups of radiating circuits obtaining corresponding being " 1 " of all L pins after numeral identifies, then photosensitive receiving tube is short-circuited fault; Character " F " is set in the reading of photo-electronic directly reading register corresponding positions;
S25, when kilowatt meter reading-out system finds that the character of non-arabic numeral appears in the reading of certain water meter or gas meter, flow meter, namely breaks down.
The present invention compared with the existing technology, has the following advantages and beneficial effect:
The present invention is directed to above-mentioned phenomenon, have employed brand-new circuit design and brand-new coded system, when each startup photo-electronic directly reading register carries out reading, capital is to light emitting diode each in photo-electronic directly reading register, photosensitive receiving tube detects, once detect the fault of short interruption, photo-electronic directly reading register will provide the information of an error in reading, the meter reading management system of tap water or gas company will find this error in reading information at once, and in time this water meter or gas meter, flow meter are keeped in repair, thus ensure that the reading of checking meter obtained from kilowatt meter reading-out system is 100% correct, thus also stopped the trade dispute that produces because of error in reading.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of circuit theory diagrams being applied to the failure detector circuit of photo-electronic directly reading register of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment
As shown in Figure 1, a kind of failure detector circuit being applied to photo-electronic directly reading register, comprise five groups of radiating circuits, MCU, described radiating circuit of often organizing comprises transmitting completing circuit, launching failure testing circuit, described transmitting completing circuit comprises light emitting diode, first launches road resistance, described launching failure testing circuit comprises the second transmitting road resistance, the identification enable pin CODEA of described MCU is connected with the negative pole of light emitting diode, the output pin L of described MCU launches road resistance by first and is connected with the positive pole of light emitting diode, the D/A converting circuit pin A/D of described MCU launches road resistance by second and is connected with the positive pole of light emitting diode, the transmitting completing circuit of described some groups of radiating circuits is in parallel, the launching failure testing circuit of described some groups of radiating circuits is in parallel.
Five groups of above-mentioned radiating circuits are as follows:
0th group of radiating circuit: output pin L0, light emitting diode D0, first launches road resistance R01, second launches road resistance R02, identify that enable pin CODEA is connected with the negative pole of light emitting diode D0, the output pin L0 of MCU launches road resistance R01 by first and is connected with the positive pole of light emitting diode D0, and the D/A converting circuit pin A/D of MCU launches road resistance R02 by second and is connected with the positive pole of light emitting diode D0;
1st group of radiating circuit: output pin L1, light emitting diode D1, first launches road resistance R11, second launches road resistance R12, identify that enable pin CODEA is connected with the negative pole of light emitting diode D1, the output pin L1 of MCU launches road resistance R11 by first and is connected with the positive pole of light emitting diode D1, and the D/A converting circuit pin A/D of MCU launches road resistance R12 by second and is connected with the positive pole of light emitting diode D1;
2nd group of radiating circuit: output pin L2, light emitting diode D2, first launches road resistance R21, second launches road resistance R22, identify that enable pin CODEA is connected with the negative pole of light emitting diode D2, the output pin L2 of MCU launches road resistance R21 by first and is connected with the positive pole of light emitting diode D2, and the D/A converting circuit pin A/D of MCU launches road resistance R22 by second and is connected with the positive pole of light emitting diode D2;
3rd group of radiating circuit: output pin L3, light emitting diode D3, first launches road resistance R31, second launches road resistance R32, identify that enable pin CODEA is connected with the negative pole of light emitting diode D3, the output pin L3 of MCU launches road resistance R31 by first and is connected with the positive pole of light emitting diode D3, and the D/A converting circuit pin A/D of MCU launches road resistance R32 by second and is connected with the positive pole of light emitting diode D3;
4th group of radiating circuit: output pin L4, light emitting diode D4, first launches road resistance R41, second launches road resistance R42, identify that enable pin CODEA is connected with the negative pole of light emitting diode D4, the output pin L4 of MCU launches road resistance R41 by first and is connected with the positive pole of light emitting diode D4, and the D/A converting circuit pin A/D of MCU launches road resistance R42 by second and is connected with the positive pole of light emitting diode D4.
Above-mentioned a kind of failure detector circuit being applied to photo-electronic directly reading register, wherein, also comprise one group of receiving circuit, described receiving circuit comprises photosensitive receiving tube PD, the input pin INA of described MCU is connected with the negative pole of photosensitive receiving tube PD, and the positive pole of described photosensitive receiving tube PD is connected with the output pin OUT of MCU.
Be applied to a detection method for the failure detector circuit of photo-electronic directly reading register, comprise launching failure detection method, comprise the steps:
S11, photo-electronic directly reading register starts reading;
S12, MCU first being put CODEA pin is low level, and putting L pin is high level, and now, voltage is that " A/D pin " interface of 3.3V, MCU launches by first the positive pole that road resistance is connected to light emitting diode, is used for detecting the voltage Vd of light emitting diode positive pole; When light emitting diode normally works, Vd=1.4V; When light-emitting diodes tube short circuit, Vd=0V; When light emitting diode open circuit, Vd=3.3V;
S13, judges light emitting diode whether fault: MCU is changed by A/D, detects the voltage of light emitting diode positive pole, and when detecting that Vd is 0V or 3.3V, MCU will will be set to character " F " in the reading of photo-electronic directly reading register corresponding positions;
S14, when kilowatt meter reading-out system finds that the character of non-arabic numeral appears in the reading of certain water meter or gas meter, flow meter, namely breaks down.
Above-mentioned a kind of detection method being applied to the failure detector circuit of photo-electronic directly reading register, also comprises reception fault detection method, comprises the steps:
S21, photo-electronic directly reading register starts reading; MCU first puts " OUT " is high level, and " CODEA " is low level, carries out numeral identify certain character wheel in photo-electronic directly reading register;
S22, certain character wheel corresponding, these character wheel both sides are provided with luminous light guide sheet and receive light guide sheet, and certain the L pin arranged in five groups of radiating circuits corresponding to this character wheel is high level, light corresponding light emitting diode, the light that light emitting diode sends, received to reception light guide sheet by luminous light guide sheet, if light injects photosensitive receiving tube by accepting light guide sheet, then photosensitive receiving tube conducting, " INA pin " is high level, and MCU identifies that corresponding L pin is " 1 "; If light does not inject photosensitive receiving tube by receiving light guide sheet, photosensitive receiving tube ends, and " INA " is low level, and MCU identifies that corresponding L pin is " 0 ";
S23, photo-electronic directly reading register, from half carry corresponding between numerical value " 0-9 " and every two numerical value, needs 20 kinds of codings altogether, arranges " 0 " and " 1 " containing varying number in each coding;
S24, judges photosensitive receiving tube whether fault: when MCU carries out obtaining corresponding being " 0 " of all L pins, then photosensitive receiving tube generation open circuit fault after numeral identifies to five of a character wheel groups of radiating circuits; When MCU to carry out five of a character wheel groups of radiating circuits obtaining corresponding being " 1 " of all L pins after numeral identifies, then photosensitive receiving tube is short-circuited fault; Character " F " is set in the reading of photo-electronic directly reading register corresponding positions;
S25, when kilowatt meter reading-out system finds that the character of non-arabic numeral appears in the reading of certain water meter or gas meter, flow meter, namely breaks down.
In above-mentioned steps, for described S22, specific as follows:
The first step: put " L0 " for high level, light the 0th light emitting diode, the light that light emitting diode sends, No. 0 luminous point is transmitted to by the 0th article of light path of luminous light guide sheet, because the character wheel now with encoding strip is printing opacity, so light injects photosensitive receiving tube, photosensitive receiving tube conducting by receiving light guide sheet, " INA " is high level, and MCU is identified as " L0=1 ".
Second step: put " L1 " for high level, light the 1st light emitting diode, the light that light emitting diode sends, No. 1 luminous point is transmitted to by the 1st article of light path of luminous light guide sheet, because the character wheel now with encoding strip is printing opacity, so light injects photosensitive receiving tube, photosensitive receiving tube conducting by receiving light guide sheet, " INA " is high level, and MCU is identified as " L1=1 ".
3rd step: put " L2 " for high level, light the 2nd light emitting diode, the light that light emitting diode sends, No. 2 luminous point is transmitted to by the 2nd article of light path of luminous light guide sheet, because the character wheel now with encoding strip is printing opacity, so light injects photosensitive receiving tube, photosensitive receiving tube conducting by receiving light guide sheet, " INA " is high level, and MCU is identified as " L2=1 ".
4th step: put " L3 " for high level, light the 3rd light emitting diode, the light that light emitting diode sends, No. 3 luminous point is transmitted to by the 3rd article of light path of luminous light guide sheet, because the character wheel now with encoding strip is lighttight, so light does not inject photosensitive receiving tube by receiving light guide sheet, photosensitive receiving tube ends, " INA " is low level, MCU is identified as " L1=0.
5th step: put " L4 " for high level, light the 4th light emitting diode, the light that light emitting diode sends, No. 4 luminous point is transmitted to by the 4th article of light path of luminous light guide sheet, because the character wheel now with encoding strip is printing opacity, so light injects photosensitive receiving tube, photosensitive receiving tube conducting by receiving light guide sheet, " INA " is high level, and MCU is identified as " L4=1 ".
Have passed above-mentioned 5 steps, MCU obtains a string binary coding: L4L3L2L1L0=10111, the character of correspondence in place be exactly " 8 ".
According to the feature of decimal system register, when a rear character wheel runs to 9 to 0 this position, last position character wheel can be driven to march forward lattice, at this time will produce half carry phenomenon.So one identifies accurate photo-electronic directly reading register, need to identify half carry.5 binary codings can identify at most 32 numerals, and photo-electronic directly reading register from " 0 " to " 9 " and corresponding half carry, need 20 kinds of codings altogether, " 0 " and " 1 " containing varying number in each coding.Coding schedule is as follows:
| Numeral | Coding | Numeral | Coding |
| 0 | 01111 | 5 | 00001 |
| 01 half carry | 01110 | 56 half carrys | 01011 |
| 1 | 01000 | 6 | 11011 |
| 12 half carrys | 11010 | 67 half carrys | 10011 |
| 2 | 11110 | 7 | 00010 |
| 23 half carrys | 11100 | 78 half carrys | 10110 |
| 3 | 10000 | 8 | 10111 |
| 34 half carrys | 10101 | 89 half carrys | 00111 |
| 4 | 11101 | 9 | 00100 |
| 45 half carrys | 11001 | 90 half carrys | 01101 |
Be only preferred embodiment of the present invention described in upper, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. one kind is applied to the failure detector circuit of photo-electronic directly reading register, it is characterized in that, comprise some groups of radiating circuits, MCU, described radiating circuit of often organizing comprises transmitting completing circuit, launching failure testing circuit, described transmitting completing circuit comprises light emitting diode, first launches road resistance, described launching failure testing circuit comprises the second transmitting road resistance, the identification enable pin CODEA of described MCU is connected with the negative pole of light emitting diode, the output pin L of described MCU launches road resistance by first and is connected with the positive pole of light emitting diode, the D/A converting circuit pin A/D of described MCU launches road resistance by second and is connected with the positive pole of light emitting diode, the transmitting completing circuit of described some groups of radiating circuits is in parallel, the launching failure testing circuit of described some groups of radiating circuits is in parallel.
2. a kind of failure detector circuit being applied to photo-electronic directly reading register according to claim 1, it is characterized in that, also comprise one group of receiving circuit, described receiving circuit comprises photosensitive receiving tube, the input pin INA of described MCU is connected with the negative pole of photosensitive receiving tube, and the positive pole of described photosensitive receiving tube is connected with the output pin OUT of MCU.
3. a kind of failure detector circuit being applied to photo-electronic directly reading register according to claim 1 and 2, it is characterized in that, described radiating circuit has five groups.
4. be applied to a detection method for the failure detector circuit of photo-electronic directly reading register, it is characterized in that, comprise launching failure detection method, comprise the steps:
S11, photo-electronic directly reading register starts reading;
S12, MCU first being put CODEA pin is low level, and putting L pin is high level, now, voltage is full value voltage, and " A/D pin " interface of MCU launches by first the positive pole that road resistance is connected to light emitting diode, is used for detecting the voltage Vd of light emitting diode positive pole; When light emitting diode normally works, Vd=operating voltage; When light-emitting diodes tube short circuit, Vd=0V; When light emitting diode open circuit, Vd=full value voltage;
S13, judges light emitting diode whether fault: MCU is changed by A/D, detects the voltage of light emitting diode positive pole, when detect Vd be 0V or full value voltage time, MCU will will be set to character " F " in the reading of photo-electronic directly reading register corresponding positions;
S14, when kilowatt meter reading-out system finds that the character of non-arabic numeral appears in the reading of certain water meter or gas meter, flow meter, namely breaks down.
5. a kind of detection method being applied to the failure detector circuit of photo-electronic directly reading register according to claim 4, is characterized in that, also comprise reception fault detection method, comprise the steps:
S21, photo-electronic directly reading register starts reading; MCU first puts " OUT " is high level, and " CODEA " is low level, carries out numeral identify certain character wheel in photo-electronic directly reading register;
S22, certain character wheel corresponding, these character wheel both sides are provided with luminous light guide sheet and receive light guide sheet, and certain the L pin arranged in five groups of radiating circuits corresponding to this character wheel is high level, light corresponding light emitting diode, the light that light emitting diode sends, received to reception light guide sheet by luminous light guide sheet, if light injects photosensitive receiving tube by accepting light guide sheet, then photosensitive receiving tube conducting, " INA pin " is high level, and MCU identifies that corresponding L pin is " 1 "; If light does not inject photosensitive receiving tube by receiving light guide sheet, photosensitive receiving tube ends, and " INA " is low level, and MCU identifies that corresponding L pin is " 0 ";
S23, photo-electronic directly reading register, from half carry corresponding between numerical value " 0-9 " and every two numerical value, needs 20 kinds of codings altogether, arranges " 0 " and " 1 " containing varying number in each coding;
S24, judges photosensitive receiving tube whether fault: when MCU carries out obtaining corresponding being " 0 " of all L pins, then photosensitive receiving tube generation open circuit fault after numeral identifies to five of a character wheel groups of radiating circuits; When MCU to carry out five of a character wheel groups of radiating circuits obtaining corresponding being " 1 " of all L pins after numeral identifies, then photosensitive receiving tube is short-circuited fault; Character " F " is set in the reading of photo-electronic directly reading register corresponding positions;
S25, when kilowatt meter reading-out system finds that the character of non-arabic numeral appears in the reading of certain water meter or gas meter, flow meter, namely breaks down.
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| CN104677407B (en) | 2017-03-29 |
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Effective date of registration: 20220606 Address after: 310000 Room 401, floor 4, building 1, No. 516, Renhe Avenue, Renhe street, Yuhang District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang Shanli Intelligent Technology Co.,Ltd. Address before: 310000 Room 501, unit 1, building 5, No. 1, Xianing lane, Xihu District, Hangzhou City, Zhejiang Province Patentee before: Xu Qinlang |