CN104660927A - Image sensor, image capturing apparatus, and cellular phone - Google Patents
Image sensor, image capturing apparatus, and cellular phone Download PDFInfo
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- CN104660927A CN104660927A CN201410688165.2A CN201410688165A CN104660927A CN 104660927 A CN104660927 A CN 104660927A CN 201410688165 A CN201410688165 A CN 201410688165A CN 104660927 A CN104660927 A CN 104660927A
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- 230000011218 segmentation Effects 0.000 claims description 6
- 238000004891 communication Methods 0.000 description 15
- 230000006870 function Effects 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000011514 reflex Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
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- 238000006243 chemical reaction Methods 0.000 description 4
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- 238000005538 encapsulation Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 240000001439 Opuntia Species 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/1469—Assemblies, i.e. hybrid integration
Abstract
The invention provides an image sensor, an image capturing apparatus, and a cellular phone. The image sensor comprises a first semiconductor comprising a plurality of pixels two-dimensionally arranged, and a plurality of division output lines in a first direction, wherein the plurality of division output lines are configured to read pixel signals from the plurality of pixels in the first direction; and a second semiconductor comprising a plurality of signal processing units and a reading unit, wherein the plurality of signal processing units are respectively corresponding with the plurality of output lines, and are configured to process the read pixel signals; the reading unit is configured to read signals outputted by the signal processing units in a second direction, wherein the first semiconductor and the second semiconductor are stacked, and the plurality of output lines and the plurality of signal processing units are in connection correspondingly.
Description
Technical field
The present invention relates to imageing sensor and use camera head and the cell phone of imageing sensor.
Background technology
Traditionally, cmos image sensor is widely used in the camera head of such as digital camera and digital video camera.Imageing sensor comprises pixel region and the peripheral circuit for exporting the signal from pixel region, amplify and read.
In recent years, along with the miniaturization of pixel, start the area considering how to guarantee photodiode.By reducing the number of elements forming each pixel, the area of photodiode can be guaranteed, and high pixel count and picture quality can be guaranteed.
On the other hand, if only increase pixel quantity, then reading speed reduces.Therefore, in order to realize high speed readout operation, such as, multiple horizontal output line and multiple output amplifier is prepared to provide multi output passage.In addition, so-called row A/D type imageing sensor (reference example is as Japanese Unexamined Patent Publication 05-048460 publication) being integrated with A/D translation function for each row has been introduced, to improve the speed of the system comprising A/D conversion.
Some row A/D type imageing sensor is formed by the so-called stacked structures such as described by Japanese Unexamined Patent Publication 2011-159958 publication, in this stacked structures, A/D converting unit for each row is formed on two chips, and is connected by these chips.
But if as described in Japanese Unexamined Patent Publication 05-048460 publication, added by A/D converter as peripheral circuit, then along with the increase of the function of peripheral circuit, the area of peripheral circuit becomes large undesirably relatively.
Such as, if as the 35mm full size format in single-lens reflex digital camera, pre-determine the area occupied by imageing sensor, then along with the increase of peripheral circuit area, chip size also merely increases.In the nature of things, the encapsulation (package) holding chip also becomes large.
Especially, when merging imageing sensor in Single-sens reflex camera, if the size in the vertical direction of imageing sensor (size in the vertical direction of camera) increases, then the light path of the optical finder of Single-sens reflex camera interfered by imageing sensor.If for suppressing such interference to attempt light path to move up, then need to carry out large change to finder optical system.This needs to carry out large amendment to traditional mechanical structure of Single-sens reflex camera, and thereby increases the load of Machine Design.Even if achieve amendment, also need large view finder prism etc., thereby increase the cost of mechanical structure parts and optical element.
On the other hand, even if adopt stacked structures as described by Japanese Unexamined Patent Publication 2011-159958 publication, with formed the situation of imageing sensor by one single chip compared with, projected area can be reduced, but by adopting stacked structures, can not readout time be shortened.
In Japanese Unexamined Patent Publication 2011-159958 publication, owing to being loaded with image processing block, therefore, it is possible to effectively utilize the second chip.But, in fact, in the single-lens reflex digital camera using mass storage, need memory chip to be arranged near image processing block, and therefore always do not expect image processing block to be arranged on the second chip.If picture signal processing block is not disposed on the second chip, then relative to chip area, the circuit quantity of actual arrangement on the second chip is very little, result in very expensive stacked chips.
Summary of the invention
The present invention considers said circumstances and makes, and when the area and cost that do not make imageing sensor are excessive, realizes high quality graphic and high speed readout operation.
According to the present invention, a kind of imageing sensor is provided, this imageing sensor comprises: the first semiconductor, it comprises multiple pixel and multiple segmentation output lines in a first direction of two-dimensional arrangement, and described multiple segmentation output line is constructed to from described multiple pixel, read picture element signal in said first direction; And second semiconductor, it comprises multiple signal processing unit and sensing element, described multiple signal processing unit corresponds respectively to described multiple output line, and be constructed to process read-out picture element signal, described sensing element is constructed to read the signal exported from described signal processing unit in a second direction, wherein, described first semiconductor and described second semiconductor are stacked, and described multiple output line is connected with described multiple signal processing unit with corresponding to each other.
In addition, according to the present invention, a kind of camera head comprising imageing sensor as defined above is provided.
In addition, according to the present invention, provide a kind of cell phone comprising imageing sensor as defined above.
By referring to the description of accompanying drawing to exemplary embodiment, other features of the present invention will become clear.
Accompanying drawing explanation
Be included in the description and form the accompanying drawing of a part for specification, exemplified with exemplary embodiment of the present invention, feature and aspect, and be used for principle of the present invention is described together with text description.
Fig. 1 is the figure of the schematic structure of the imageing sensor illustrated according to the first embodiment of the present invention.
Fig. 2 is the circuit diagram of the example of the structure of the pixel that imageing sensor is shown.
Fig. 3 A and Fig. 3 B is the figure of the schematic structure illustrated separately in the semiconductor of the imageing sensor according to the first embodiment.
Fig. 4 is the figure of the example of the cross-section structure of the imageing sensor illustrated according to embodiment.
Fig. 5 A and Fig. 5 B is the figure of the schematic structure illustrated separately in the semiconductor of the imageing sensor according to the second embodiment.
Fig. 6 is the block diagram of the cellular schematic structure illustrated according to the 3rd embodiment.
Embodiment
Now, exemplary embodiment of the present invention is described in detail with reference to accompanying drawing.According to the various condition and the structure that are applicable to device of the present invention, suitably should change the size of the component parts shown in embodiment, shape and relative position, and the invention is not restricted to embodiment described herein.
< first embodiment >
With reference to Fig. 1, the first embodiment of the present invention is described.Fig. 1 describes the schematic structure of the imageing sensor according to the first embodiment of the present invention.Note, the various camera heads that it is representative that imageing sensor of the present invention can be used in digital camera, digital video camera etc.
As shown in Figure 1, according in the imageing sensor of the first embodiment, multiple pixel 101 is by two-dimensional arrangement.Note, for convenience of description, Fig. 1 shows in the horizontal direction in (line direction) and vertical direction (column direction) respectively 6 pixels.But, in the imageing sensor of reality, be furnished with millions of to several ten million pixels 101.The detailed construction of pixel 101 is described with reference to Fig. 2.
As shown in Figure 2, pixel 101 comprises photodiode 201, transmission switch 202, float diffusion unit 203, MOS amplifier 204, selector switch 205 and Resetting Switching 206.
The light of the optical system incidence via camera head is converted to the signal of telecommunication by photodiode 201.Photodiode 201 is connected to and transmits switch 202.Grid (gate) the suspension control signal TX transmitting switch 202 controls, so that the electric charge of accumulation in photodiode 201 is sent to floating diffusion unit 203.
Charge conversion is the voltage corresponding with the quantity of electric charge transmitted by the diffusion unit 203 that floats, and voltage is input to the grid of MOS amplifier 204.The output of MOS amplifier 204 is imported into selector switch 205.When the control signal SEL of selector switch 205 selects corresponding row, the vertical output line (column output line) on each row there is the picture element signal in this corresponding row.
Resetting Switching 206 suspension control signal RES controls.In floating diffusion unit 203, the electric charge of accumulation can be reset via Resetting Switching 206.
Again with reference to Fig. 1, the picture element signal that the pixel 101 of each output from the respective column being arranged in imageing sensor in vertical output line (column output line) 102a and 102b exports.Each in constant current source 103a and 103b drives one corresponding in vertical output line 102a and 102b.As shown in Figure 1, be two cut-off rules in the vertical direction of imageing sensor according to vertical output line 102a and 102b of the first embodiment.Constant current source 103a and 103b is arranged accordingly with vertical output line 102a and 102b respectively.
The floating diffusion unit 203 of pixel 101 and MOS amplifier 204, vertical output line 102a or 102b and constant current source 103a and 103b constitute source follower.The electric charge being arranged in each pixel 101 on the row selected by selector switch 205 is converted into voltage signal, and voltage signal appears on vertical output line 102a and 102b respectively.
Control signal SEL, RES and TX for controlling pixel 101 is supplied from vertical scanning circuit 104a and 104b and signal selecting circuit 105a and 105b.The common vertical scanning pulse being input to vertical scanning circuit 104a and 104b determines the row that will select.The information of selected row is respectively transmitted to signal selecting circuit 105a and 105b.
Control signal, according to the timing of input signal SEL, RES and TX supplied from timing generator (not shown) and the information of selected row, is supplied to the pixel of corresponding row by each of signal selecting circuit 105a and 105b as required.By this way, the picture element signal of selected row appears in vertical output line 102a and 102b respectively.
In a first embodiment, the output of two row selected by two vertical scanning circuit 104a and 104b appears in vertical output line 102a and 102b respectively.The signal appeared at thus in vertical output line 102a and 102b is imported into column circuits 106a and 106b.
Each of column circuits 106a and 106b is made up of the circuit comprising column amplifier.In amplifier in all upper and lower column circuits, the identical gain selected by control signal (not shown) is multiplied.
Vertical output line is generally extended to last pixel from first pixel in the vertical direction of imageing sensor.Especially, in the imageing sensor of the large Single-sens reflex camera of actual size, the impact of the resistance that the physical length due to vertical output line causes, distributing electric capacity etc., makes circuit unstable.Such as, from the signal potential be switched on until vertical output line of the selector switch each pixel become stable till the expensive time.Correspondingly, after having connected selector switch, the column amplifier that cannot read immediately in column circuits exports.
In contrast, as shown in Figure 1, by splitting vertical output line (column output line) in a vertical direction (columns), arrange column circuits 106a and 106b for each vertical output line, and carry out signal transacting, significantly can reduce destabilizing factor.This can significantly shorten the stable stand-by period, shortens readout time thus.In addition, synchronously can also read the picture element signal in two different rows in vertical direction, make roughly reduce by half readout time thus.
Be input to A/D change-over circuit 107a and 107b of each row with suitable gain amplifying signal in column circuits 106a and 106b.A/D change-over circuit 107a and 107b changes the output signal of column circuits 106a and 106b in preset range, and difference output digit signals.The output signal of A/D change-over circuit 107a and 107b is remained in memory 108a and 108b of back segment respectively temporarily.When output signal is maintained in memory 108a and 108b, A/D change-over circuit 107a and 107b can start the conversion operations for next line immediately, can carry out high speed operation thus.
The numerical data remained in memory 108a and 108b is exported for each leu by horizontal output circuit 109a and 109b, and is outputted to outside imageing sensor by final output driver 110a and 110b.Although simply show each final output driver 110a and 110b in FIG, but in order to output digital data suitably, in fact it can be formed by the circuit such as the parallel data that sorts, serializing circuit and lvds driver etc.
Note, in a first embodiment, comprising two-dimensional arrangement has the dotted line part of the pixel region of pixel 101, vertical scanning circuit 104a and 104b and signal selecting circuit 105a and 105b to be formed in the first semiconductor 111.
Assembly except above-mentioned points, that is, constant current source 103a and 103b, column circuits 106a and 106b, A/D change-over circuit 107a and 107b, memory 108a and 108b, horizontal output circuit 109a and 109b, final output driver 110a and 110b are formed in the second semiconductor 112.
First semiconductor 111 and the second semiconductor 112 are stacked, and connect at the tie point 113 be disposed between these semiconductors.
The example of the structure of each assembly in above-mentioned first semiconductor 111 and the second semiconductor 112 is described with reference to Fig. 3 A and Fig. 3 B.Fig. 3 A illustrates according to the first embodiment, the vertical view of imageing sensor when observing from the side of the first semiconductor 111 being furnished with pixel region.
First semiconductor 111 and the second semiconductor 112 to be formed on different semiconductor substrate and to have the semiconductor chip of roughly the same profile, and are stacked and are connected by electric wire.In semiconductor is enclosed (encapsulate) single package, and be processed as an imageing sensor.
With reference to Fig. 3 A, vertical scanning circuit 104a and 104b, signal selecting circuit 105a and 105b, two-dimensional arrangement have the pixel region of pixel 101 and vertical output line 102a and 102b split in vertical direction in each row is disposed in the first semiconductor 111.Tie point 113 for being electrically connected to the second semiconductor is disposed in the end of vertical output line 102a and 102b.
Fig. 3 B is the vertical view of the imageing sensor illustrated according to the first embodiment.Fig. 3 B shows the second semiconductor 112 that can see when removing the first semiconductor 111, that be furnished with peripheral circuit.Equally, in the second semiconductor 112, tie point 113 is disposed in the position identical with the first semiconductor 111.Constant current source 103a and 103b of vertical output line is disposed near tie point 113.Immediately after constant current source 103a and 103b, be furnished with column circuits 106a and 106b.In back segment, be furnished with A/D change-over circuit 107a and 107b.A/D change-over circuit 107a and 107b occupies the maximum region relative to circuit scale.In back segment, be furnished with memory 108a and 108b.Said modules is arranged with the direction same with pixel column direction.
Horizontal output circuit 109a and 109b is placed on the centre of the second semiconductor 112 by horizontal direction (line direction).Digital signal exports and is sent to horizontal output circuit 109a and 109b, and is then supplied to final output driver 110a and 110b at left end.Each the area of final output driver 110a and 110b depends on the way of output, but because logical circuit scale is relatively large, and in the image sensor in order to drive the final output of such as LVDS to comprise the circuit being performed driving by relatively high electric current, thus tend to become large.
Fig. 4 shows the cross-section structure of the imageing sensor according to the first embodiment of the present invention.The first semiconductor 111 being furnished with pixel is formed on semiconductor substrate 401, and comprises the region 402 of the first conduction type.In the region 402 of the first conduction type, be equipped with the region 201 of the second conduction type forming photodiode, transmit switch 202, float diffusion unit 203 and selector switch 205.Note, for convenience of description, not shown Resetting Switching and MOS amplifier.
Be equipped with territory, element separation area 404, first wiring layer 405, second wiring layer 406, the 3rd wiring layer 407 and the 4th wiring layer 408.4th wiring layer 408 forms tie point 113.Each wiring layer is electrically connected by through hole 409.
As the structure that pixel region is intrinsic, in each pixel, be formed with colour filter 410 and lenticule 411.
On the other hand, the second semiconductor 112 is formed on semiconductor substrate 412, and comprises the region 413 of the first conduction type.In the region 413 of the first conduction type, be formed with transistor 414.Be equipped with territory, element separation area 404, first wiring layer 415, second wiring layer 416, the 3rd wiring layer 417 and the 4th wiring layer 418.4th wiring layer 418 forms tie point 113.The tie point 113 of the first semiconductor 111 and the tie point 113 of the second semiconductor 112 are by connections such as dimpling blocks (microbump) 419.Now, the pel spacing of imageing sensor is number micron order.But, if for the position of each line skew tie point, then micro-bump pitch of twice pel spacing can be guaranteed, and can use dimpling block thus.
As other methods of attachment, after by these semiconductor multilayers, form through hole to the wiring layer of another semiconductor in a semiconductor substrate in these semiconductor substrates, and metal to be imbedded in through hole to form through VIA, guarantee electrical connection thus.
Describe edge pixels with reference to Fig. 4.As shown in Figure 3 B, below the pixel region of middle body periphery, various function block circuit is formed with.
Split vertical output line in a vertical direction (columns) to make it possible to carry out high speed readout operation.Similarly, column circuits, A/D change-over circuit etc. that respective pixel arranges are arranged in the back side of pixel region, can the overall dimension of minimizing image transducer.This makes it possible to large imageing sensor to enclose in little encapsulation, contributes to the size reducing camera thus.Note that when connection first semiconductor 111 and the second semiconductor 112, by Stacket semiconductor to make overlapping area maximum, can the size of downscaled images transducer effectively.
The wiring layer quantity, structure etc. of each semiconductor are not limited to the scope described in the first embodiment, and the present invention can be applied to the semiconductor of the layer with any amount.
In a first embodiment, the constant current circuit for splitting each vertical output line is disposed in the second semiconductor 112.But constant current circuit also can be arranged in the first semiconductor 111.
< second embodiment >
Imageing sensor according to a second embodiment of the present invention will be described below.In a second embodiment, transducer will be described as follows, in this transducer, vertical output line (column output line) is split into four lines in a vertical direction (columns), and the end of each line is set to the tie point to the second semiconductor.
Fig. 5 A according to the second embodiment, from be furnished with imageing sensor pixel region the first semiconductor 2111 side observe time vertical view.With reference to Fig. 5 A, the first semiconductor 2111 is furnished with vertical scanning circuit 104a to 104d, signal selecting circuit 150a to 105d, two-dimensional arrangement has the pixel region of pixel 101 and the vertical output line 102a to 102d split in vertical direction for each row.The tie point 113 for being electrically connected to the second semiconductor 2112 is furnished with in the end of each vertical output line 102a to 102d.Note, it is identical that the structure of each pixel 101 and reference Fig. 2 describe, and therefore will the description of omission to it.
Fig. 5 B is the vertical view of the imageing sensor illustrated according to the second embodiment.Fig. 5 B shows the second semiconductor 2112 that can see when removing the first semiconductor 2111, that be furnished with peripheral circuit.Same in the second semiconductor 2112, tie point 113 is disposed in the position same with the first semiconductor 2111.The constant current source 103a to 103d of vertical output line is disposed near tie point 113.After constant current source 103a to 103d, be furnished with column circuits 106a to 106d.A/D change-over circuit 107a to 107d is furnished with in back segment.Be less than the first embodiment when circuit scale can be designed to be, and when four groups of circuit can be arranged in the vertical direction (column direction) of imageing sensor, the structure of the second embodiment can be realized.Memory 108a to 108d is disposed in back segment.Said modules is arranged by with the direction identical with pixel column direction.
Horizontal output circuit 109a to 109d is placed on the centre of the block up and down of the second semiconductor 2112 by horizontal direction.Digital signal exports and is sent to horizontal output circuit 109a to 109d, and is then supplied to the final output driver 110a to 110d of left end.Each the area of final output driver 110a to 110d depends on the way of output, but because logical circuit scale is relatively large, and in the image sensor in order to drive the final output of such as LVDS to comprise the circuit being performed driving by relatively high electric current, thus tend to become large.
Noting, in a second embodiment, being disposed in the second semiconductor 2112 for driving the constant current source 103a to 103d of each vertical output line 102a to 102d.If this is because vertical line is split into three or more bar lines in vertical direction, is then difficult to constant current source is arranged in the first semiconductor 2111, and more expects constant current source to be arranged in the second semiconductor 2112 thus.
As mentioned above, by being increased in the quantity of the segmentation vertical output line (column output line) in vertical direction (column direction), four lines can be read simultaneously, can high speed readout operation be carried out thus.Similarly, column circuits, A/D change-over circuit etc. that respective pixel arranges are arranged in the back side of pixel region, can the overall dimension of minimizing image transducer.This makes it possible to large imageing sensor to enclose in little encapsulation, contributes to the size reducing camera thus.
In addition, due to can based in a column direction in the second semiconductor the circuit area of actual arrangement determine vertical segmentation quantity, therefore, it is possible to determine any dividing number, and to make the overall dimension of imageing sensor become minimum for designed image transducer suitably, or suitably designed image transducer to be suitable for the image procossing of back segment.
In the above-mentioned first or second embodiment, describe following situation: the first semiconductor 111 or 2111 is connected by the dimpling block be used on wiring layer with the second stacking semiconductor 112 or 2112.The present invention is not limited thereto.To be back lighting type or front optical illumination type or semiconductor be is connected by dimpling block or connected by through VIA and different according to pixel region for the type of attachment of each semiconductor.Any structure can be adopted.
< the 3rd embodiment >
Fig. 6 is the block diagram of the structure of the cell phone 300 illustrated according to the third embodiment of the invention.According to the cell phone of the 3rd embodiment except there is audio communication function, also there are e-mail function, internet, image taking/playback function etc.
In figure 6, the communication means of common carrier of communication unit 301 by following user and having contracted, carries out communicating of voice data and view data with other phones.In audio communication, the voice data from microphone 303 is converted to the form being suitable for initiating by sound processing unit 302, and sends the data of conversion to communication unit 301.Similarly, the audio data decoding from callee that sound processing unit 302 will be sent from communication unit 301, and send decoded data to loud speaker 304.
Image sensing unit 305 is included in the imageing sensor described in the one of the first and second embodiments, the image of shooting subject, and output image data.When photographic images, graphics processing unit 306 processes the view data of being taken by image sensing unit 305, converts data to the form being suitable for recording, and exports translation data.When playback image, the image of playback is wanted in graphics processing unit 306 process, and sends process image to display unit 307.Display unit 307 comprises the LCDs of large approximate number inch size, and shows various displaying contents according to the instruction from control unit 309.The data of nonvolatile memory 308 stores address book information and such as e-mail data, the view data of being taken by image sensing unit 305 etc.
Control unit 309 comprises CPU and memory, and controls each unit of cell phone 300 according to the control program stored in memory (not shown).Operating unit 310 comprises power knob, numerical key and other operation keyss various for user input data.Card I/F 311 records to storage card 312 and reads various data from it.Exterior I/F 313 external device sends the data be stored in nonvolatile memory 308 and storage card 312, and receives the data sent from external equipment.Exterior I/F 313 by such as radio communication or meet such as USB standard wire communication method, known communication means communicates.
Next, the audio communication function in cell phone 300 will be described.When calling out callee, the numerical key of user operation operating unit 310 to input the number of callee, or carries out operating on display unit 307, show the address book be stored in nonvolatile memory 308, select callee, and instruction is initiated.When indicating initiation, control unit 309 makes a call to callee via communication unit 301.If callee's answering call, then communication unit 301 exports the voice data of callee to sound processing unit 302, and gives callee by the audio data transmitting of user.
When sending an e-mail, the establishment of user by using operating unit 310 to indicate mail.When indicating the establishment of mail, control unit 309 shows mail creation picture on display unit 307.User inputs sending destination address and text by using operating unit 310, and instruction sends.When indicating the transmission of mail, control unit 309 sends the data of address information and message body to communication unit 301.Mail data is converted to the form being suitable for communicating by communication unit 301, and sends translation data to sending destination.When communication unit 301 receives Email, the mail data received is converted to the form being suitable for showing by it, and translation data is presented on display unit 307.
Next, cellular image camera function will be described.When user operation operating unit 310 is to arrange screening-mode and then to indicate shooting rest image or moving image, image sensing unit 305 carries out taking and sends Still image data or the motion image data of shooting to graphics processing unit 306.Graphics processing unit 306 processes Still image data or the motion image data of shooting, and deal with data is stored in nonvolatile memory 308.Graphics processing unit 306 sends Still image data or the motion image data of acquisition to card I/F 311.Still image data or motion image data are stored in storage card 312 by card I/F 311.
Cell phone 300 can comprise the file of Still image data or the motion image data taken by this way, and the annex as Email sends.More specifically, when sending an e-mail, select the image file be stored in nonvolatile memory 308 or storage card 312, and instruction is as the transmission of the image file of annex.
Cell phone 300 can also via exterior I/F 313 to such as PC or other phones external equipment send comprise the Still image data of shooting or the file of motion image data.User selects the file be stored in nonvolatile memory 308 or storage card 312 by operation operating unit 310, and instruction sends.Control unit 309 carries out the image file controlled to read selection from nonvolatile memory 308 or storage card 312, and controls exterior I/F 313 sends reading image file with external device.
Although with reference to exemplary embodiment, invention has been described, should be appreciated that and the invention is not restricted to disclosed exemplary embodiment.The widest explanation should be given to the scope of claims, contain all modification, equivalent structure and function to make it.
Claims (7)
1. an imageing sensor, this imageing sensor comprises:
First semiconductor, it comprises multiple pixel and multiple segmentation output lines in a first direction of two-dimensional arrangement, and described multiple segmentation output line is constructed to from described multiple pixel, read picture element signal in said first direction; And
Second semiconductor, it comprises multiple signal processing unit and sensing element, described multiple signal processing unit corresponds respectively to described multiple output line, and be constructed to process read-out picture element signal, described sensing element is constructed to read the signal exported from described signal processing unit in a second direction
Wherein, described first semiconductor and described second semiconductor are stacked, and described multiple output line is connected with described multiple signal processing unit with corresponding to each other.
2. imageing sensor according to claim 1, wherein, described first semiconductor and described second semiconductor are stacked to make overlapping area maximum.
3. imageing sensor according to claim 1, wherein, described first semiconductor and described second semiconductor have identical profile.
4. imageing sensor according to claim 1, wherein, each in described multiple signal processing unit comprises at least one in amplifier and A/D change-over circuit.
5. imageing sensor according to claim 1, wherein, described second semiconductor also comprises the multiple driver elements being constructed to drive described multiple output line respectively.
6. a camera head, it comprises the imageing sensor that any one in claim 1 to 5 limits.
7. a cell phone, it comprises the imageing sensor that any one in claim 1 to 5 limits.
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| JP2013243346 | 2013-11-25 | ||
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| JP2014217663A JP6463944B2 (en) | 2013-11-25 | 2014-10-24 | Imaging device, imaging device, and mobile phone |
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| CN109429020A (en) * | 2017-08-21 | 2019-03-05 | 三星电子株式会社 | For manufacturing the method and system of imaging sensor |
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| CN108886589A (en) * | 2016-03-31 | 2018-11-23 | 索尼公司 | Solid-state imaging element, imaging device and electronic device |
| CN108886589B (en) * | 2016-03-31 | 2021-02-19 | 索尼公司 | Solid-state imaging element, imaging device, and electronic device |
| CN107957235A (en) * | 2016-10-14 | 2018-04-24 | Ckd株式会社 | Three-dimensional measuring apparatus |
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| KR101782334B1 (en) | 2017-09-27 |
| KR20150060541A (en) | 2015-06-03 |
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