CN104660042A - Switching circuit for voltage conversion - Google Patents

Switching circuit for voltage conversion Download PDF

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Publication number
CN104660042A
CN104660042A CN201410798180.2A CN201410798180A CN104660042A CN 104660042 A CN104660042 A CN 104660042A CN 201410798180 A CN201410798180 A CN 201410798180A CN 104660042 A CN104660042 A CN 104660042A
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CN
China
Prior art keywords
transistor switch
voltage
transistor
output
input
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CN201410798180.2A
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Chinese (zh)
Inventor
黄宗伟
林水木
程健源
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Richtek Technology Corp
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Richtek Technology Corp
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Priority to CN201410798180.2A priority Critical patent/CN104660042A/en
Publication of CN104660042A publication Critical patent/CN104660042A/en
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/1557—Single ended primary inductor converters [SEPIC]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)

Abstract

The invention provides a switching circuit for voltage conversion. The switching circuit comprises an upper switch and a lower switch, wherein the upper switch is provided with a first upper transistor switch and a second upper transistor switch, and the lower switch is provided with a first lower transistor switch. When the switching circuit needs to break over a channel of the upper switch, a channel of the first lower transistor switch is blocked, then a channel of the first upper transistor switch is broken over, and finally a channel of the second upper transistor switch is broken over; or when the switching circuit needs to break over a channel of the lower switch, the channel of the second upper transistor switch is blocked, then the channel of the first upper transistor switch is blocked, and finally the channel of the first lower transistor switch is blocked. Thus, the dead time of the switching circuit during operation can be shorted, the breakover of a parasitic element of the switch is avoided, and the voltage conversion efficiency is improved.

Description

The switching circuit of voltage transitions
Technical field
The invention provides a kind of switching circuit, espespecially a kind of switching circuit of voltage transitions, its circuit is in order to improve the efficiency of voltage transitions.
Background technology
Electronic installation inside includes many various electronic components, and the operating voltage needed for each electronic component is usually different.Therefore, in an electronic, often configure a voltage conversion circuit (voltageconverting circuit), utilize voltage conversion circuit to carry out the adjustment of voltage quasi position, the output voltage of a demand is changed out, to provide the load energy needed for output loading with a voltage quasi position input voltage regulation to preset.
Referring to Fig. 1, is the circuit diagram of the switching circuit of conventional voltage conversion.As shown in Figure 1, the switching circuit 100 of voltage transitions is the voltage conversion circuit of a voltage-dropping type, and it includes control module 10, voltage input end 11, switch module 13, inductance element 14 and a voltage output end 15.
Wherein voltage input end 11 is in order to receive an input voltage vin.Switch module 13 comprises upper switches 131, lower switches 132, inverting amplifier 133 and an in-phase amplifier 134.Upper switches 131 and lower switches 132 can be bipolar npn transistor.
The control signal controlling module 10 is sent to upper switches 131 and lower switches 132 to control conducting or the cut-off of upper switches 131 and lower switches 132 via inverting amplifier 133 and in-phase amplifier 134, and adjusts the size of current of the node 110 (N1) between upper switches 131 or lower switches 132.Inductance element 14 is coupled to node N1, utilizes inductance element 14 to change out an output voltage Vout at voltage output end 15, and provides an output current Iout.In addition, due to processing procedure skew, physical characteristic etc. factor, upper switches 131 and the lower switches 132 of switch module 13 certainly exist some parasitic antennas, such as: parasitic diode, parasitic transistor, parasitic capacitance etc.
Moreover in order to avoid a large penetrating current is present between upper switches 131 and lower switches 132, upper switches 131 will present reverse operation with the on off state of lower switches 132.Such as: after control module 10 controls upper switches 131 cut-off, after then control lower switches 132 conducting, or control module 10 controls lower switches 132 cut-off, then control upper switches 131 conducting.
Because traditional voltage switcher circuit 100 utilizes single element to make for upper switches 131 or lower switches 132, as bipolar npn transistor, so that upper switches 131 or lower switches 132 have a larger size, and the control end of meaning and upper switches 131 or lower switches 132 also can have a larger parasitic capacitance.Then, when controlling module 10 for driving the control end of upper switches 131 or lower switches 132, elder generation must carry out the action of charge or discharge for larger parasitic capacitance, and making upper switches 131 or lower switches 132 cannot carry out channel conductive or cut-off immediately.At this, after control module 10 controls a wherein switch cut-off, often need a period of time to control another switch conduction, then, this upper switches 131 and lower switches 132 idle time (dead time) of simultaneously ending by be present in voltage conversion circuit 100 running in the middle of.
When voltage conversion circuit 100 operated in idle time, output current Iout will select to flow to the parasitic antenna of upper switches 131 or lower switches 132 and form current circuit.This current circuit formed via parasitic antenna, not only can produce the interference of electromagnetism noise, if idle time maintains the longer time, will have influence on the conversion efficiency of voltage.
Summary of the invention
In view of this, the present invention will provide a kind of switching circuit of voltage transitions, and it can shorten idle time when switching circuit operates, and avoiding the parasitic antenna of actuating switch, and effectively improve voltage conversion efficiency, will be object of the present invention.
For achieving the above object, the present invention is by the following technical solutions:
A kind of switching circuit of voltage transitions, its circuit comprises a control module, a upper switches and a lower switches, when controlling the passage of module wish conducting upper switches, first the passage of lower switches must be ended, the passage of ability conducting upper switches, or, when controlling the passage of module wish conducting lower switches, must first be ended by the passage of upper switches, the passage of ability conducting lower switches, to avoid producing penetrating current between upper switches and lower switches.
The present invention proposes a kind of switching circuit of voltage transitions, its upper switches comprises one first top transistor switch and one second top transistor switch, the size of the first top transistor switch is greater than the size of the second top transistor switch, when controlling module for conducting upper switches, the channel conductive of the first top transistor switch that first controlling dimension is less, the channel conductive of the second top transistor switch that controlling dimension is larger again, to avoid the parasitic antenna of conducting upper switches, and increase the conversion efficiency of voltage transitions, or, when controlling module for cut-off upper switches, the passage of the second top transistor switch that first deadline size is larger, the passage of the first top transistor switch that deadline size is less again, to reduce the possibility of passage because of the change conducting once again of node voltage of the second top transistor switch ended.
The present invention proposes a kind of switching circuit of voltage transitions, its underpart switch comprises one first bottom transistor switch and one second bottom transistor switch, the size of the first bottom transistor switch is greater than the size of the second bottom transistor switch, when controlling module for conducting lower switches, the channel conductive of the first bottom transistor switch that first controlling dimension is less, the channel conductive of the second bottom transistor switch that controlling dimension is larger again, to avoid the parasitic antenna of conducting lower switches, and increase the conversion efficiency of voltage transitions, or, when controlling module for cut-off lower switches, the passage of the second bottom transistor switch that first deadline size is larger, the passage of the first bottom transistor switch that deadline size is less again, to reduce the possibility of passage because of the change conducting once again of node voltage of the second bottom transistor switch ended.
To achieve the above object, the present invention proposes a kind of switching circuit of voltage transitions, comprise: a upper switches, comprise one first top transistor switch and one second top transistor switch, the passage of upper switches is formed via the passage of the passage second top transistor switch in parallel of the first top transistor switch, and the equiva lent impedance of the channel conductive of the first top transistor switch is greater than the equiva lent impedance of the channel conductive of the second top transistor switch; One lower switches, comprises one first bottom transistor switch; One inductance element, its one end and upper switches and lower switches are connected to a first node, other end ground connection altogether, and wherein upper switches is arranged between a voltage input end and first node, and lower switches is arranged between first node and a voltage output end; And one controls module, connect the control end of the first top transistor switch, the control end of the second top transistor switch and the control end of the first bottom transistor switch, an input voltage of voltage input end is converted to an output voltage to voltage output end to regulate the power supply energy on inductance element by the channel conductive or the cut-off that control the first top transistor switch, the second top transistor switch and the first bottom transistor switch.
The present invention proposes again a kind of switching circuit of voltage transitions, it is characterized in that, comprising: a upper switches, comprises one first top transistor switch; One lower switches, comprise one first bottom transistor switch and one second bottom transistor switch, the passage of bottom transistor switch is formed via the passage of the passage first bottom transistor switch in parallel of the first bottom transistor switch, and the equiva lent impedance of the channel conductive of the first bottom transistor switch is greater than the equiva lent impedance of the channel conductive of the second bottom transistor switch; One inductance element, its one end and upper switches and lower switches are connected to a first node, other end ground connection altogether, and wherein upper switches is arranged between a voltage input end and first node, and lower switches is arranged between first node and a voltage output end; And one controls module, connect the control end of the first top transistor switch, the control end of the first bottom transistor switch and the control end of the second bottom transistor switch, an input voltage of input is converted to an output voltage to voltage output end to regulate the power supply energy on inductance element by the channel conductive or the cut-off that control the first top transistor switch, the first bottom transistor switch and the second bottom transistor switch.
The invention has the advantages that;
The present invention can shorten idle time during switching circuit running, avoids the parasitic antenna of actuating switch, and effectively improves voltage conversion efficiency.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the switching circuit of conventional voltage conversion.
Fig. 2 is the electrical block diagram of an embodiment of the switching circuit of voltage transitions of the present invention.
Fig. 3 is the electrical block diagram of the another embodiment of switching circuit of voltage transitions of the present invention.
Fig. 4 is the electrical block diagram of the another embodiment of switching circuit of voltage transitions of the present invention.
Fig. 5 is the detailed circuit structural representation of Fig. 4 voltage switcher circuit one embodiment of the present invention.
Fig. 6 is the detailed circuit structural representation of voltage signal detector one embodiment described in Fig. 5 of the present invention.
Fig. 7 is the detailed circuit structural representation of the another embodiment of Fig. 4 voltage switcher circuit of the present invention.
Fig. 8 is the detailed circuit structural representation of voltage signal detector one embodiment described in Fig. 7 of the present invention.
Embodiment
Referring to Fig. 2, is the electrical block diagram of an embodiment of the switching circuit of voltage transitions of the present invention.As shown in the figure, switching circuit 200 is the voltage switcher circuit of an anti-phase booster type (inverting boost), and it comprises control module 20, voltage input end 21, upper switches 23, lower switches 25, inductance element 27 and a voltage output end 29.
Wherein upper switches 23 comprises one first top transistor switch 231 and one second top transistor switch 232, and lower switches 25 comprises one first bottom transistor switch 251.First top transistor switch 231 and the second top transistor switch 232 can be positive-negative-positive bipolar transistor or P type metal-oxide half field effect transistor, and the first bottom transistor switch 251 can be bipolar npn transistor or N-type metal-oxide half field effect transistor.The passage of upper switches 23 is formed via the passage of the passage second top transistor switch 232 in parallel of the first top transistor switch 231, and the equiva lent impedance of the channel conductive of the first top transistor switch 231 is greater than the equiva lent impedance of the channel conductive of the second top transistor switch 232.One end of inductance element 27 and upper switches 23 and lower switches 25 are connected to a first node 210 altogether, and other end ground connection.Moreover upper switches 23 will be arranged between a voltage input end 21 and first node 210, and lower switches 25 will be arranged between first node 210 and a voltage output end 29.Control the control end that module 20 connects the control end of the first top transistor switch 231, the control end of the second top transistor switch 232 and the first bottom transistor switch 251, in order to control channel conductive or the cut-off of the first top transistor switch 231, second top transistor switch 232 and the first bottom transistor switch 251.In the present embodiment, before controlling the passage of module 20 for conducting upper switches 23, first must control lower switches 25 and end, upper switches 23 conducting could be controlled; Or, before controlling the passage of module 20 for conducting lower switches 25, first must control upper switches 23 and end, lower switches 25 conducting could be controlled.So, penetrating current can be avoided to produce between upper switches 23 and lower switches 25.
Moreover, the upper switches of conventional voltage conversion switch circuit only utilizes one-transistor element to realize, the size of its switch is formed with comparatively greatly the parasitic capacitance of large-size on control end, therefore, when switching circuit carries out channel conductive or cut-off for controlling upper switches, the conducting of upper switches or the reaction time of cut-off will be had influence on because of the parasitic capacitance of large-size for this reason, cause parasitic antenna (as parasitic diode, the parasitic transistor) conducting of upper switches to form current circuit.In embodiments of the present invention, upper switches 23 realizes utilizing two transistor element to carry out (as top transistor switch 231,232), the equiva lent impedance of the channel conductive of the first top transistor switch 231 is owing to being greater than the factor of the equiva lent impedance of the channel conductive of the second top transistor switch 232, therefore, first top transistor switch 231 will have less size, and the control end of the first top transistor switch 231 also will have less parasitic capacitance, so that the reaction speed of its switching manipulation can be comparatively quick.
Therefore when controlling module 20 for conducting upper switches 23, the channel conductive of the first top transistor switch 231 that first controlling dimension is less, then the channel conductive of larger the second top transistor switch 232 of controlling dimension.Switch control mode like this, before the parasitic antenna conducting of upper switches 23, the passage of fast conducting first top transistor switch 231 and form the circuit loop of normal operation, the conversion efficiency increasing voltage transitions to avoid producing unnecessary electric current noise among circuit.
In addition, when controlling module 20 for cut-off upper switches 23, the passage of the second top transistor switch 232 that first deadline size is larger, then the passage of less the first top transistor switch 231 of deadline size.Because the passage of the first top transistor switch 231 can be ended fast, the passage that can reduce the second top transistor switch 232 ended is the possibility of conducting once again because of the change in voltage on first node 210, to avoid the operation having influence on voltage transitions.
Manipulated by the switch of control module 20 for upper switches 23 and lower switches 25, regulate the accumulate energy on inductance element 27, make the input voltage vin of voltage input end 21 can be converted to the output voltage Vout of a demand in voltage output end 29.
Refer to Fig. 3, the electrical block diagram of the another embodiment of the switching circuit for voltage transitions of the present invention.As shown in the figure, switching circuit 300 is the voltage switcher circuit of an anti-phase booster type (inverting boost), and it comprises control module 30, voltage input end 31, upper switches 33, lower switches 35, inductance element 37 and a voltage output end 39.
Wherein upper switches 33 comprises one first top transistor switch 331, and lower switches 35 comprises one first bottom transistor switch 351 and one second bottom transistor switch 352.First top transistor switch 331 can be positive-negative-positive bipolar transistor or P type metal-oxide half field effect transistor, and the first bottom transistor switch 351 and the second bottom transistor switch 352 can be bipolar npn transistor or N-type metal-oxide half field effect transistor.The passage of lower switches 35 is formed via the passage of the passage second bottom transistor switch 352 in parallel of the first bottom transistor switch 351, and the equiva lent impedance of the channel conductive of the first bottom transistor switch 351 is greater than the equiva lent impedance of the channel conductive of the second bottom transistor switch 352.One end of inductance element 37 and upper switches 33 and lower switches 35 are connected to a first node 310 altogether, and other end ground connection.Moreover upper switches 33 will be arranged between a voltage input end 31 and first node 310, and lower switches 35 will be arranged between first node 310 and a voltage output end 39.Control the control end that module 30 connects the control end of the first top transistor switch 331, the control end of the first bottom transistor switch 351 and the second bottom transistor switch 352, in order to control channel conductive or the cut-off of the first top transistor switch 331, first bottom transistor switch 351 and the second bottom transistor switch 352.In the present embodiment, before controlling the passage of module 30 for conducting lower switches 35, first must control upper switches 33 and end, lower switches 35 conducting could be controlled; Or, before controlling the passage of module 30 for conducting upper switches 33, first must control lower switches 35 and end, upper switches 33 conducting could be controlled.So, penetrating current can be avoided to produce between upper switches 33 and lower switches 35.
Moreover, the upper switches of conventional voltage conversion switch circuit only utilizes one-transistor element to realize, the size of its switch is formed with comparatively greatly the parasitic capacitance of large-size on control end, therefore, when switching circuit carries out channel conductive or cut-off for controlling lower switches, the conducting of lower switches or the reaction time of cut-off will be had influence on because of the parasitic capacitance of large-size for this reason, cause parasitic antenna (as parasitic diode, the parasitic transistor) conducting of lower switches to form current circuit.In embodiments of the present invention, lower switches 35 realizes utilizing two transistor element to carry out (as bottom transistor switch 351,352), the equiva lent impedance of the channel conductive of the first bottom transistor switch 351 is owing to being greater than the factor of the equiva lent impedance of the channel conductive of the second bottom transistor switch 352, therefore, first bottom transistor switch 351 will have less size, and the control end of the first bottom transistor switch 351 also will have less parasitic capacitance, so that the reaction speed of its switching manipulation can be comparatively quick.
Therefore when controlling module 30 for conducting lower switches 35, the channel conductive of the first bottom transistor switch 351 that first controlling dimension is less, then the channel conductive of larger the second bottom transistor switch 352 of controlling dimension.Switch control mode like this, before the parasitic antenna conducting of lower switches 35, the passage of fast conducting first bottom transistor switch 351 and form the circuit loop of normal operation, the conversion efficiency increasing voltage transitions to avoid producing unnecessary electric current noise in circuit.
In addition, when controlling module 30 for cut-off lower switches 35, first ending the passage of the second bottom transistor switch 352, then ending the passage of the first bottom transistor switch 351.Because the passage of the first bottom transistor switch 351 can be ended fast, the passage that can reduce the second bottom transistor switch 352 ended is the possibility of conducting once again because of the change in voltage on first node 310, to avoid the operation having influence on voltage transitions.
Manipulated by the switch of control module 30 for upper switches 33 and lower switches 35, regulate the accumulate energy on inductance element 37, make the input voltage vin of voltage input end 31 can be converted to the output voltage Vout of a demand in voltage output end 39.
Referring to Fig. 4, is the electrical block diagram of the another embodiment of the switching circuit of voltage transitions of the present invention.As shown in the figure, switching circuit 400 is the voltage switcher circuit of an anti-phase booster type (inverting boost), and it comprises control module 40, voltage input end 41, upper switches 43, lower switches 45, inductance element 47 and a voltage output end 49.
Wherein upper switches 43 comprises one first top transistor switch 431 and one second top transistor switch 432, and lower switches 45 comprises one first bottom transistor switch 451 and one second bottom transistor switch 452.First top transistor switch 431 and the second top transistor switch 432 can be positive-negative-positive bipolar transistor or P type metal-oxide half field effect transistor, and the first bottom transistor switch 451 and the second bottom transistor switch 452 can be bipolar npn transistor or N-type metal-oxide half field effect transistor.The passage of upper switches 43 is formed via the passage of the passage second top transistor switch 432 in parallel of the first top transistor switch 431, and the passage of lower switches 45 is formed via the passage of the passage second bottom transistor switch 452 in parallel of the first bottom transistor switch 451.And, the equiva lent impedance of the channel conductive of the first top transistor switch 431 is greater than the equiva lent impedance of the channel conductive of the second top transistor switch 432, and the equiva lent impedance of the channel conductive of the first bottom transistor switch 451 is greater than the equiva lent impedance of the channel conductive of the second bottom transistor switch 452.One end of inductance element 47 and upper switches 43 and lower switches 45 are connected to a first node 410 altogether, and other end ground connection.Moreover upper switches 43 will be arranged between a voltage input end 41 and first node 410, and lower switches 45 will be arranged between first node 410 and a voltage output end 49.Control module 40 and connect the control end of the first top transistor switch 431, the control end of the second top transistor switch 432, the control end of the first bottom transistor switch 451 and the second bottom transistor switch 452, in order to control channel conductive or the cut-off of the first top transistor switch 431, second top transistor switch 432, first bottom transistor switch 451 and the second bottom transistor switch 452.In the present embodiment, before controlling the passage of module 40 for conducting upper switches 43, first must control lower switches 45 and end, upper switches 43 conducting could be controlled; Or, before controlling the passage of module 40 for conducting lower switches 45, first must control upper switches 43 and end, lower switches 45 conducting could be controlled.So, penetrating current can be avoided to produce between upper switches 43 and lower switches 45.
Moreover, the upper switches of conventional voltage conversion switch circuit and lower switches all utilize one-transistor element to realize, the size of its switch is formed with comparatively greatly the parasitic capacitance of large-size on control end, therefore, when switching circuit carries out channel conductive or cut-off for control upper switches or lower switches, the conducting of upper switches or lower switches or the reaction time of cut-off will be had influence on because of the parasitic capacitance of large-size, cause the parasitic antenna of upper switches or lower switches (as parasitic diode, parasitic transistor) conducting formation current circuit.
Relative, in the embodiment of the present invention, upper switches 43 and lower switches 45 all utilize two transistor element carry out realizing (as top transistor open 431,432, bottom transistor switch 451,452).The equiva lent impedance that equiva lent impedance due to the channel conductive of the first top transistor switch 431 is greater than the equiva lent impedance of the channel conductive of the second top transistor switch 432 and the channel conductive of the first bottom transistor switch 451 is greater than the factor of the equiva lent impedance of the channel conductive of the second bottom transistor switch 452, first top transistor switch 431 and the first bottom transistor switch 451 all have the speciality that reduced size size and control end thereof have less parasitic capacitance respectively, so that the reaction speed of its switching manipulation can both be comparatively quick.
Therefore when controlling module 40 for conducting upper switches 43 or lower switches 45, the channel conductive of the first top transistor switch 431 that first controlling dimension is less or the first bottom transistor switch 451, then the channel conductive of larger the second top transistor switch 432 of controlling dimension or the second bottom transistor switch 452.Switch control mode like this, before the parasitic antenna conducting of upper switches 43 or lower switches 45, the passage of fast conducting first top transistor switch 431 or the first bottom transistor switch 451 and form the circuit loop of normal operation, the conversion efficiency increasing voltage transitions to avoid producing unnecessary electric current noise among circuit.
In addition, when controlling module 40 for cut-off upper switches 43 or lower switches 45, first end the passage of the second top transistor switch 432 or the second bottom transistor switch 452, then end the passage of the first top transistor switch 431 or the first top transistor switch 451.At this, because the passage of the first top transistor switch 431 or the first top transistor switch 451 can be ended fast, the passage that can reduce the second top transistor switch 432 or the second bottom transistor switch 452 ended is the possibility of conducting once again because of the change in voltage on first node 410, to avoid the operation having influence on voltage transitions.
Then, manipulated by the switch of control module 40 for upper switches 43 and lower switches 45, regulate the accumulate energy on inductance element 47, make the input voltage vin of voltage input end 41 can be converted to the output voltage Vout of a demand in voltage output end 49.
Referring to Fig. 5, is the detailed circuit structural representation of Fig. 4 voltage switcher circuit one embodiment of the present invention.As shown in the figure, the present embodiment voltage switcher circuit 500 comprises voltage input end 41, upper switches 43, lower switches 45, inductance element 47, voltage output end 49 and a control module 50.The detailed construction controlling module 50 comprises controller 52,1 first upper driver 541,1 second upper driver 542,1 first lower driver 561,1 second lower driver 562 and a voltage signal detector 58.
First upper driver 541 has first input end, the second input and output, its output connects the control end of the first top transistor switch 431, first input end connects the control end of the first bottom transistor switch 451, and the second input connects the control end of the second top transistor switch 432.Wherein, when positive edge occurs the signal that the second input of the first upper driver 541 receives, the output of the first upper driver 541 exports one first reference voltage V r1.Or when negative edge occurs the signal that the first input end of the first upper driver 541 receives, the output of the first upper driver 541 exports one second reference voltage V r2.In the present invention, the first reference voltage V r1to set higher than the second reference voltage V r2.In embodiments of the present invention, the first upper driver 541 utilizes trigger as basic element.
Second upper driver 542 has first input end, the second input and output, its output connects the control end of the second top transistor switch 412, first input end connects the control end of the first top transistor switch 431, the second input connection control device 52.Wherein, when the first input end of the second upper driver 542 or the second input receive the first reference voltage V r1time, the output of the second upper driver 542 is by output first reference voltage V r1, otherwise the output of the second upper driver 542 exports the second reference voltage V r2.In embodiments of the present invention, the second upper driver 542 utilize or door as basic element.
Voltage signal detector 58 has first input end, the second input and output, and its output connects the control end of the first bottom transistor switch 451, and the second input connects first node 410 with receiving node voltage Vn.In embodiments of the present invention, voltage signal detector 58 sets a lower voltage limit threshold value relative to node voltage Vn.If voltage signal detector 58 receives the first reference voltage V via first input end r1and when detecting that node voltage Vn on first node 410 is lower than lower voltage limit threshold value via the second input, the output of voltage signal detector 58 exports the first reference voltage V r1; Otherwise, if voltage signal detector 58 receives the second reference voltage V via first input end r2time, its output of detection of voltage signal detector 58 not XM voltage Vn directly exports the second reference voltage V r2.
First lower driver 561 has first input end, the second input and output, its output connects the first input end of voltage signal detector 58, first input end connects the control end of the second bottom transistor switch 452, and the second input connects the control end of the first top transistor switch 431.Wherein, when positive edge occurs the signal that the second input of the first lower driver 561 receives, the output of the first lower driver 561 exports the first reference voltage V r1; Otherwise when negative edge occurs the signal that the first input end of the first lower driver 561 receives, the output of the first lower driver 561 exports the second reference voltage V r2.In embodiments of the present invention, the first lower driver 561 utilizes trigger as basic element.
Second lower driver 562 has first input end, the second input and output, its output connects the control end of the second bottom transistor switch 452, first input end connection control device 52, second input connects the control end of the first bottom transistor switch 451.Wherein, when the first input end of the second lower driver 562 and the second input receive the first reference voltage V simultaneously r1time, the output of the second lower driver 562 exports the first reference voltage V r1, otherwise the output of the second lower driver 562 exports the second reference voltage V r2.In embodiments of the present invention, the second lower driver 562 utilize and lock as basic element.
Then, the switch control action of the present embodiment voltage switcher circuit 500 is further illustrated.When voltage switcher circuit 500 is for first ending the passage of passage then conducting lower switches 45 of upper switches 43, first, perform the flow process of the passage cut-off of upper switches 43, the voltage signal that the output of controller 52 exports will from the second reference voltage V r2be converted to the first reference voltage V r1, the output of the second upper driver 542 will reflect the first reference voltage V r1and end the passage of the second top transistor switch 432.There is positive edge via the output transition of the second upper driver 542 in the second input of the first upper driver 541, makes the output of the first upper driver 541 export the first reference voltage V r1and end the passage of the first top transistor switch 431, then, the passage of upper switches 43 really enters cut-off state.
Subsequently, voltage switcher circuit 500 enters idle time, and the output current that now inductance element 47 produces will flow to voltage output end 49, and the node voltage Vn on first node 410 will decline gradually.Now, perform the flow process of the channel conductive of lower switches 45, there is positive edge due to the output transition of the first upper driver 541 in the second input of the first lower driver 561, makes the output of the first lower driver 561 export the first reference voltage V r1to voltage signal detector 58.Voltage signal detector 58 receives the first reference voltage V via first input end r1and whether via the node voltage Vn on the second input detection first node 410 lower than lower voltage limit threshold value, if when node voltage Vn is lower than lower voltage limit threshold value, then the output of voltage signal detector 58 is by output first reference voltage V r1with the passage of conducting first bottom transistor switch 451, and the idle time of end voltage conversion switch circuit 500.Afterwards, two inputs of the second lower driver 562 receive the first reference voltage V from controller 52 and voltage signal detector 58 respectively r1and export the first reference voltage V at output r1with the passage of conducting second bottom transistor switch 452, then, the passage of lower switches 45 really enters conducting state.As above implement according to this, the passage that voltage switcher circuit 500 of the present invention first ends upper switches 43 can be realized, then the technical purpose of the passage of conducting lower switches 45.
Or, when voltage switcher circuit 500 is for first ending the passage of passage then conducting upper switches 43 of lower switches 45, first, perform the flow process of the passage cut-off of lower switches 45, the voltage signal that the output of controller 52 exports will from the first reference voltage V r1be converted to the second reference voltage V r2, the output of the second lower driver 562 will reflect the second reference voltage V r2and end the passage of the second bottom transistor switch 452.There is negative edge via the output transition of the second lower driver 562 in the first input end of the first lower driver 561, makes the output of the first lower driver 561 export the second reference voltage V r2to voltage signal detector 58.Voltage signal detector 58 is receiving the second reference voltage V via first input end r2time, its output of detection of XM voltage Vn does not directly export the second reference voltage V r2to end the passage of the first bottom transistor switch 451, then, the passage of lower switches 45 really enters cut-off state.
Subsequently, voltage switcher circuit 500 enters idle time, now, perform the flow process of the channel conductive of upper switches 43, there is negative edge via the transition of the control end of the first bottom transistor switch 451 in the first input end of the first upper driver 541, makes the output of the first upper driver 541 export the second reference voltage V r2and the passage of conducting first top transistor switch 431.Then, two inputs of the second upper driver 542 receive the second reference voltage V from controller 52 and the first upper driver 541 respectively r2and export the second reference voltage V at output r2with the passage of conducting second top transistor switch 432, then, the passage of upper switches 43 really enters conducting state.As above implement according to this, the passage that voltage switcher circuit 500 of the present invention first ends lower switches 45 can be realized, then the technical purpose of the passage of conducting upper switches 43.
Referring to Fig. 6, is the detailed circuit structural representation of an embodiment of the voltage signal detector described in Fig. 5 of the present invention.As shown in the figure, voltage signal detector 58 comprises the first transistor 581, transistor seconds 582, third transistor 583, the 4th transistor 584, transmission gate 585 and a not gate 586.
The first transistor 581 is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, and its channel setting is at the first reference voltage V r1and first bottom transistor switch 451 control end between.Transistor seconds 582 is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, and its channel setting is at the second reference voltage V r2and first bottom transistor switch 451 control end between, the tie point wherein between the collector of the first transistor 581 or the collector of drain and transistor seconds 582 or drain is the output of voltage signal detector 58.Third transistor 583 is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, and its channel setting is at the first reference voltage V r1and between the control end of the first transistor 581 (base stage or gate pole).One end of the passage of transmission gate 585 connects the control end of the first transistor 581, positive control end connects the control end (base stage or gate pole) of third transistor 583, and inverted control terminals connects the control end (base stage or gate pole) of transistor seconds 582.4th transistor 584 is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, its channel setting is between the other end and first node 410 of transmission gate 585, and wherein the collector of the 4th transistor 584 or drain are the second input of voltage signal detector 58.The input of not gate 586 connects the output of the first lower driver value 561, and output connects the control end of transistor seconds 582 and the positive control end of transmission gate 585, wherein the tie point of the control end of the input of not gate 585, third transistor 583, the control end of the 4th transistor 584 and the inverted control terminals of transmission gate 585 is the first input end of voltage signal detector 58.
When voltage signal detector 58 receives the first reference voltage V from the first lower driver 561 r1time, the passage of cut-off transistor seconds 582 and third transistor 583, and conducting transmission gate 585.Then, when being reduced to lower voltage limit threshold value under the node voltage Vn on first node 410, the passage of the 4th transistor 584 will conducting.This node voltage Vn be in compared with electronegative potential is connected to the control end of the first transistor 581 via the 4th transistor 584 of channel conductive and transmission gate 585, and the passage of conducting the first transistor 581 according to this, make the control end of the first bottom transistor switch 451 connect the first reference voltage V via the first transistor 581 of channel conductive r1, and the passage of conducting first bottom transistor switch 451.
Or, when voltage signal detector 58 receives the second reference voltage V from the first lower driver 561 r2time, the passage of conducting transistor seconds 582 and third transistor 583, and end transmission gate 585.Then, the control end of the first transistor 581 connects the first reference voltage VR1 via the third transistor 583 of channel conductive, and ends the passage of the first transistor 581.Now, the control end of the first bottom transistor switch 451 connects the second reference voltage V via the transistor seconds 582 of channel conductive r2, and end the passage of the first bottom transistor switch 451.
Referring to Fig. 7, is the detailed circuit structural representation of the another embodiment of Fig. 4 voltage switcher circuit of the present invention.As shown in the figure, the present embodiment voltage switcher circuit 600 comprises voltage input end 41, upper switches 43, lower switches 45, inductance element 47, voltage output end 49 and a control module 60.The detailed construction controlling module 60 comprises controller 62,1 first upper driver 641,1 second upper driver 642,1 first lower driver 661,1 second lower driver 662 and a voltage signal detector 68.
First upper driver 641 has first input end, the second input and output, its output connects the first input end of voltage signal detector 68, first input end connects the control end of the first bottom transistor switch 451, and the second input connects the control end of the second top transistor switch 432.When positive edge occurs the signal wherein received when the second input of the first upper driver 641, the output of the first upper driver 641 exports one first reference voltage V r1.Or when negative edge occurs the signal that the first input end of the first upper driver 641 receives, the output of the first upper driver 641 exports the second reference voltage V r2.In embodiments of the present invention, the first upper driver 641 utilizes trigger as basic element.
Second upper driver 642 has first input end, the second input and output, its output connects the control end of the second top transistor switch 432, first input end connects the control end of the first top transistor switch 43, the second input connection control device 62.Wherein, when the first input end of the second upper driver 642 or the second input receive the first reference voltage V r1time, the output of the second upper driver 642 is by output first reference voltage V r1, otherwise the output of the second upper driver 642 exports the second reference voltage V r2.In embodiments of the present invention, the second upper driver 642 utilize or door as basic element.
Voltage signal detector 68 has first input end, the second input and output, and its output connects the control end of the first top transistor switch 431, and the second input connects first node 410 with receiving node voltage Vn.In embodiments of the present invention, voltage signal detector 68 sets a upper voltage limit threshold value relative to node voltage Vn.If voltage signal detector 68 receives the second reference voltage V via first input end r2and when detecting that node voltage Vn on first node 410 is higher than a upper voltage limit threshold value via the second input, the output of voltage signal detector 68 exports the second reference voltage V r2; Otherwise, if voltage signal detector 68 receives the first reference voltage V via first input end r1time, its output of detection of voltage signal detector 68 not XM voltage Vn directly exports the first reference voltage V r1.
First lower driver 661 has first input end, the second input and output, its output connects the control end of the first bottom transistor switch 451, first input end connects the control end of the second bottom transistor switch 452, and the second input connects the control end of the first top transistor switch 431.Wherein, when positive edge occurs the signal that the second input of the first lower driver 661 receives, the output of the first lower driver exports the first reference voltage V r1; Otherwise when negative edge occurs the signal that the first input end of the first lower driver 661 receives, the output of the first lower driver 661 exports the second reference voltage V r2.In embodiments of the present invention, the first lower driver 661 utilizes trigger as basic element.
Second lower driver 662 has first input end, the second input and output, its output connects the control end of the second bottom transistor switch 452, first input end connection control device 62, second input connects the control end of the first bottom transistor switch 451.Wherein, when the first input end of the second lower driver 662 and the second input receive the first reference voltage V simultaneously r1time, the output of the second lower driver 662 exports the first reference voltage V r1, otherwise the output of the second lower driver 662 exports the second reference voltage V r2.In embodiments of the present invention, the second lower driver 662 utilize and lock as basic element.
Then, the switch control action of the present embodiment voltage switcher circuit 600 is further illustrated.When voltage switcher circuit 600 for first end lower switches 45 passage then conducting upper switches 43 time, first, perform the flow process of the passage cut-off of lower switches 45, the voltage signal that the output of controller 62 exports will from the first reference voltage V r1be converted to the second reference voltage V r2, the output of the second lower driver 662 will reflect the second reference voltage V r2and end the passage of the second bottom transistor switch 452.There is negative edge via the output transition of the second lower driver 662 in the first input end of the first lower driver 661, makes the output of the first lower driver 661 export the second reference voltage V r2and end the passage of the first bottom transistor switch 451, then, the passage of lower switches 45 really enters cut-off state.
Subsequently, voltage switcher circuit 600 enters idle time, and it is inner that the output current that now inductance element 47 produces flows to voltage switcher circuit 600, and the node voltage Vn on first node 410 will raise gradually.Now, perform the flow process of the channel conductive of upper switches 43, there is negative edge due to the output transition of the first lower driver 661 in the first input end of the first upper driver 641, makes the output of the first lower driver 661 export the second reference voltage V r2to voltage signal detector 68.Voltage signal detector 68 receives the second reference voltage V via first input end r2and via the node voltage Vn on the second input detection first node 410 whether higher than upper voltage limit threshold value, if when node voltage Vn is higher than upper voltage limit threshold value, then the output of voltage signal detector 68 by output second reference voltage VR2 with the passage of conducting first top transistor switch 431, and idle time of end voltage conversion switch circuit 600.Afterwards, two inputs of the second upper driver 642 receive the second reference voltage V from controller 62 and voltage signal detector 68 respectively r2and export the second reference voltage V at output r2with the passage of conducting second top transistor switch 432, then, the passage of upper switches 43 really enters conducting state.As above implement according to this, the passage that voltage switcher circuit 600 of the present invention first ends lower switches 45 can be realized, then the technical purpose of the passage of conducting upper switches 43.
Or, when voltage switcher circuit 600 is for first ending the passage of passage then conducting lower switches 45 of upper switches 43, first, perform the flow process of the passage cut-off of upper switches 43, the voltage signal that the output of controller 62 exports will from the second reference voltage V r2be converted to the first reference voltage V r1, the output of the second upper driver 642 will reflect the first reference voltage V r1and end the passage of the second top transistor switch 432.There is positive edge via the output transition of the second upper driver 642 in the second input of the first upper driver 641, makes the output of the second upper driver 642 export the first reference voltage V r1to voltage signal detector 68.Voltage signal detector 68 is receiving the first reference voltage V via first input end r1time, its output of detection of XM voltage Vn does not directly export the first reference voltage V r1to end the passage of the first top transistor switch 431, then, the passage of upper switches 43 really enters cut-off state.
Subsequently, voltage switcher circuit 600 enters idle time, now, perform the flow process of the channel conductive of lower switches 45, there is positive edge via the transition of the control end of the first top transistor switch 431 in the second input of the first lower driver 661, makes the output of the first lower driver 661 export the first reference voltage V r1and the passage of conducting first bottom transistor switch 451.Then, two inputs of the second lower driver 662 receive the first reference voltage V from controller 62 and the first lower driver 661 respectively r1and export the first reference voltage V at output r1with the passage of conducting second bottom transistor switch 452, then, the passage of lower switches 45 really enters conducting state.As above implement according to this, the passage that voltage switcher circuit 600 of the present invention first ends upper switches 43 can be realized, then the technical purpose of the passage of conducting lower switches 45.
Referring to Fig. 8, is the detailed circuit structural representation of voltage signal detector one embodiment described in Fig. 7 of the present invention.As shown in the figure, voltage signal detector 68 comprises the first transistor 681, transistor seconds 682, third transistor 683, the 4th transistor 684, transmission gate 685 and a not gate 686.
The first transistor 681 is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, and its channel setting is at the control end of the first top transistor switch 431 and the second reference voltage V r2between.Transistor seconds 682 is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, and its channel setting is at the first reference voltage V r1and first top transistor switch 431 control end between, the tie point wherein between the collector of the first transistor 681 or the collector of drain and transistor seconds 682 or drain is the output of voltage signal detector 68.Third transistor 683 is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, and its channel setting is at the control end of the first transistor 681 and the second reference voltage V r2between.One end of the passage of transmission gate 685 connects the control end of the first transistor 681, and positive control end connects the control end of transistor seconds 682, and inverted control terminals connects the control end of third transistor 683.4th transistor 684 is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, its channel setting is between the other end and first node 410 of transmission gate 685, and wherein the collector of the 4th transistor 684 or drain are the second input of voltage signal detector 68.Its input of not gate 686 connects the output of the first upper driver 641, and output connects the control end of transistor seconds 682 and the positive control end of transmission gate 685.Wherein, the tie point of the control end of the input of not gate 685, third transistor 683, the control end of the 4th transistor 684 and the inverted control terminals of transmission gate 685 is the first input end of voltage signal detector 68.
When voltage signal detector 68 receives the second reference voltage V from the first upper driver 641 r2time, the passage of cut-off transistor seconds 682 and third transistor 683, and conducting transmission gate 685.Then, when the node voltage Vn on first node 410 rises higher than upper voltage limit threshold value, the passage of the 4th transistor 684 will conducting.This node voltage Vn being in high potential is connected to the control end of the first transistor 681 via the 4th transistor 684 of channel conductive and transmission gate 685, and the passage of conducting the first transistor 681 according to this, make the control end of the first top transistor switch 431 connect the second reference voltage V via the first transistor 681 of channel conductive r2, and the passage of conducting first top transistor switch 431.
Or, when voltage signal detector 68 receives the first reference voltage V from the first upper driver 641 r1time, the passage of conducting transistor seconds 682 and third transistor 683, and end conducting transmission gate 685.Then, the control end of the first transistor 681 connects the second reference voltage V via the third transistor 683 of channel conductive r2, and end the passage of the first transistor 681.Now, the control end of the first top transistor switch 431 connects the first reference voltage V via the transistor seconds 682 of channel conductive r1, and end the passage of the first top transistor switch 431.
The above, be only a preferred embodiment of the present invention, not be used for limiting scope of the invention process, namely all equalizations of doing according to shape, structure, feature and the spirit described in the present patent application the scope of the claims change and modify, and all should be included in claim of the present invention.

Claims (14)

1. the switching circuit of voltage transitions, is characterized in that, comprising:
One upper switches, comprise one first top transistor switch and one second top transistor switch, the passage of upper switches is formed via the passage of the passage second top transistor switch in parallel of the first top transistor switch, and the equiva lent impedance of the channel conductive of the first top transistor switch is greater than the equiva lent impedance of the channel conductive of the second top transistor switch;
One lower switches, comprises one first bottom transistor switch;
One inductance element, its one end and upper switches and lower switches are connected to a first node, other end ground connection altogether, and wherein upper switches is arranged between a voltage input end and first node, and lower switches is arranged between first node and a voltage output end; And
One controls module, connect the control end of the first top transistor switch, the control end of the second top transistor switch and the control end of the first bottom transistor switch, an input voltage of voltage input end is converted to an output voltage to voltage output end to regulate the power supply energy on inductance element by the channel conductive or the cut-off that control the first top transistor switch, the second top transistor switch and the first bottom transistor switch.
2. the switching circuit of voltage transitions according to claim 1, it is characterized in that, when the passage of upper switches described in the conducting of described control module wish, first control the passage cut-off of described lower switches, control the channel conductive of described upper switches again, or when the passage of lower switches described in the conducting of described control module wish, first control the passage cut-off of described upper switches, then control the channel conductive of described lower switches.
3. the switching circuit of voltage transitions according to claim 2, it is characterized in that, when described control module controls the channel conductive of described upper switches, first control the channel conductive of described first top transistor switch, control the channel conductive of described second top transistor switch again, or when described control module controls the cut-off of described upper switches, first control the passage cut-off of described second top transistor switch, then control the passage cut-off of described first top transistor switch.
4. the switching circuit of voltage transitions according to claim 2, it is characterized in that, described lower switches still comprises one second bottom transistor switch, the passage of described lower switches is formed via the passage of passage this second bottom transistor switch in parallel of described first bottom transistor switch, the equiva lent impedance of the channel conductive of described first bottom transistor switch is greater than the equiva lent impedance of the channel conductive of this second bottom transistor switch, described control module controls described first top transistor switch, second top transistor switch, the input voltage of described voltage input end is converted to output voltage to described voltage output end by the channel conductive of the first bottom transistor switch and/or this second bottom transistor switch or cut-off to regulate the power supply energy on described inductance element.
5. the switching circuit of voltage transitions according to claim 4, it is characterized in that, when described control module controls the channel conductive of described lower switches, first control the channel conductive of described first bottom transistor switch, control the channel conductive of described second bottom transistor switch again, and when described control module controls the cut-off of described lower switches, first control the passage cut-off of described second bottom transistor switch, then control the passage cut-off of described first bottom transistor switch.
6. the switching circuit of voltage transitions according to claim 5, it is characterized in that, described first top transistor switch and the second top transistor switch are positive-negative-positive bipolar transistor or P type metal-oxide half field effect transistor, and described first bottom transistor switch and the second bottom transistor switch are bipolar npn transistor or N-type metal-oxide half field effect transistor.
7. the switching circuit of voltage transitions according to claim 6, is characterized in that, described control module comprises:
One controller;
One first upper driver, there is first input end, second input and output, the output of this first upper driver connects the control end of described first top transistor switch, the first input end of this first upper driver connects the control end of described first bottom transistor switch, second input of this first upper driver connects the control end of described second top transistor switch, when there is positive edge in the signal wherein received when the second input of this first upper driver, the output of this first upper driver exports one first reference voltage, when there is negative edge in the signal that the first input end of this first upper driver receives, the output of this first upper driver exports one second reference voltage, wherein this first reference voltage is higher than this second reference voltage,
One second upper driver, there is first input end, second input and output, the output of this second upper driver connects the control end of described second top transistor switch, the first input end of this second upper driver connects the control end of described first top transistor switch, second input of this second upper driver connects this controller, wherein when the first input end of this second upper driver or the second input receive this first reference voltage, the output of this second upper driver is by this first reference voltage of output, otherwise, the output of this second upper driver exports this second reference voltage,
One voltage signal detector, there is first input end, second input and output, the output of this voltage signal detector connects the control end of described first bottom transistor switch, second input of this voltage signal detector connects described first node, wherein when this voltage signal detector receives this first reference voltage via first input end and detect that node voltage on described first node is lower than a lower voltage limit threshold value via this second input, the output of this voltage signal detector exports this first reference voltage, or when this voltage signal detector receives this second reference voltage via first input end, the output of this voltage signal detector directly exports this second reference voltage,
One first lower driver, there is first input end, second input and output, the output of this first lower driver connects the first input end of this voltage signal detector, the first input end of this first lower driver connects the control end of this second bottom transistor switch, second input of this first lower driver connects the control end of described first top transistor switch, when there is positive edge in the signal wherein received when the second input of this first lower driver, the output of this first lower driver exports this first reference voltage, when there is negative edge in the signal that the first input end of this first lower driver receives, the output of this first lower driver exports this second reference voltage, and
One second lower driver, there is first input end, second input and output, the output of this second lower driver connects the control end of described second bottom transistor switch, the first input end of this second lower driver connects this controller, second input of this second lower driver connects the control end of described first bottom transistor switch, wherein when the first input end of this second lower driver and the second input receive this first reference voltage simultaneously, the output of this second lower driver exports this first reference voltage, otherwise, the output of this second lower driver exports this second reference voltage.
8. the switching circuit of voltage transitions according to claim 7, is characterized in that, described voltage signal detector comprises:
One the first transistor, it is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, and the channel setting of this first transistor is between the control end of described first reference voltage and the first bottom transistor switch;
One transistor seconds, it is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, the channel setting of this transistor seconds is between the control end of described second reference voltage and the first bottom transistor switch, and the tie point wherein between the collector of this first transistor or the collector of drain and this transistor seconds or drain is the output of described voltage signal detector;
One third transistor, it is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, and the channel setting of this third transistor is between the control end of described first reference voltage and this first transistor;
One transmission gate, one end of the passage of this transmission gate connects the control end of this first transistor, and positive control end connects the control end of this third transistor, and inverted control terminals connects the control end of this transistor seconds;
One the 4th transistor, it is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, the channel setting of the 4th transistor is between the other end and described first node of this transmission gate, and wherein the collector of the 4th transistor or drain are the second input of described voltage signal detector; And
One not gate, its input connects the output of described first lower driver, and output connects the control end of this transistor seconds and the positive control end of this transmission gate, wherein the tie point of the control end of the input of this not gate, this third transistor, the control end of the 4th transistor and the inverted control terminals of this transmission gate is the first input end of described voltage signal detector.
9. the switching circuit of voltage transitions according to claim 6, is characterized in that, described control module comprises:
One controller;
One first lower driver, there is first input end, second input and output, the output of this first lower driver connects the control end of described first bottom transistor switch, the first input end of this first lower driver connects the control end of described second bottom transistor switch, second input of this first lower driver connects the control end of described first top transistor switch, when there is positive edge in the signal wherein received when the second input of this first lower driver, the output of this first lower driver exports this first reference voltage, when there is negative edge in the signal that the first input end of this first lower driver receives, the output of this first lower driver exports this second reference voltage,
One second lower driver, there is first input end, second input and output, the output of this second lower driver connects the control end of described second bottom transistor switch, the first input end of this second lower driver connects this controller, second input of this second lower driver connects the control end of described first bottom transistor switch, wherein when the first input end of this second lower driver and the second input receive this first reference voltage simultaneously, the output of this second lower driver exports this first reference voltage, otherwise, the output of this second lower driver exports this second reference voltage,
One voltage signal detector, there is first input end, second input and output, the output of this voltage signal detector connects the control end of described first top transistor switch, second input of this voltage signal detector connects described first node, wherein when this voltage signal detector receives this second reference voltage via first input end and detect that node voltage on described first node is higher than a upper voltage limit threshold value via this second input, the output of this voltage signal detector exports this second reference voltage, or when this voltage signal detector receives this first reference voltage via first input end, the output of this voltage signal detector directly exports this first reference voltage,
One first upper driver, there is first input end, second input and output, the output of this first upper driver connects the first input end of this voltage signal detector, the first input end of this first upper driver connects the control end of described first bottom transistor switch, second input of this first upper driver connects the control end of described second top transistor switch, when there is positive edge in the signal wherein received when the second input of this first upper driver, the output of this first upper driver exports one first reference voltage, when there is negative edge in the signal that the first input end of this first upper driver receives, the output of this first upper driver exports one second reference voltage, wherein this first reference voltage is higher than this second reference voltage, and
One second upper driver, there is first input end, second input and output, the output of this second upper driver connects the control end of described second top transistor switch, the first input end of this second upper driver connects the control end of described first top transistor switch, second input of this second upper driver connects this controller, wherein when the first input end of this second upper driver or the second input receive this first reference voltage, the output of this second upper driver is by this first reference voltage of output, otherwise, the output of this second upper driver exports this second reference voltage.
10. the switching circuit of voltage transitions according to claim 9, is characterized in that, described voltage signal detector comprises:
One the first transistor, it is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, and the channel setting of this first transistor is between the control end and the second reference voltage of described first top transistor switch;
One transistor seconds, it is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, the channel setting of this transistor seconds is between the control end of described first reference voltage and the first top transistor switch, and the tie point wherein between the collector of this first transistor or the collector of drain and this transistor seconds or drain is the output of described voltage signal detector;
One third transistor, it is bipolar npn junction transistor or N-type metal-oxide half field effect transistor, and the channel setting of this third transistor is between the control end and described second reference voltage of this first transistor;
One transmission gate, one end of the passage of this transmission gate connects the control end of this first transistor, and positive control end connects the control end of this transistor seconds, and inverted control terminals connects the control end of this third transistor;
One the 4th transistor, it is positive-negative-positive bipolarity junction transistor or P type metal-oxide half field effect transistor, the channel setting of the 4th transistor is between the other end and described first node of this transmission gate, and wherein the collector of the 4th transistor or drain are the second input of this voltage signal detector; And
One not gate, its input connects the output of described first upper driver, and output connects the control end of this transistor seconds and the positive control end of this transmission gate, wherein the tie point of the control end of the input of this not gate, this third transistor, the control end of the 4th transistor and the inverted control terminals of this transmission gate is the first input end of this voltage signal detector.
The switching circuit of 11. 1 kinds of voltage transitions, is characterized in that, comprising:
One upper switches, comprises one first top transistor switch;
One lower switches, comprise one first bottom transistor switch and one second bottom transistor switch, the passage of bottom transistor switch is formed via the passage of the passage first bottom transistor switch in parallel of the first bottom transistor switch, and the equiva lent impedance of the channel conductive of the first bottom transistor switch is greater than the equiva lent impedance of the channel conductive of the second bottom transistor switch;
One inductance element, its one end and upper switches and lower switches are connected to a first node, other end ground connection altogether, and wherein upper switches is arranged between a voltage input end and first node, and lower switches is arranged between first node and a voltage output end; And
One controls module, connect the control end of the first top transistor switch, the control end of the first bottom transistor switch and the control end of the second bottom transistor switch, an input voltage of input is converted to an output voltage to voltage output end to regulate the power supply energy on inductance element by the channel conductive or the cut-off that control the first top transistor switch, the first bottom transistor switch and the second bottom transistor switch.
The switching circuit of 12. voltage transitions according to claim 11, it is characterized in that, when the passage of lower switches described in the conducting of described control module wish, first control the passage cut-off of described upper switches, control the channel conductive of described lower switches again, or when the passage of upper switches described in the conducting of described control module wish, first control the passage cut-off of described lower switches, then control the channel conductive of described upper switches.
The switching circuit of 13. voltage transitions according to claim 12, it is characterized in that, when described control module controls the channel conductive of described lower switches, first control the channel conductive of described first bottom transistor switch, control the channel conductive of described second bottom transistor switch again, or when described control module controls the cut-off of described lower switches, first control the passage cut-off of described second bottom transistor switch, then control the passage cut-off of described first bottom transistor switch.
The switching circuit of 14. voltage transitions according to claim 11, it is characterized in that, described first top transistor switch is positive-negative-positive bipolar transistor or P type metal-oxide half field effect transistor, and described first bottom transistor switch and the second bottom transistor switch are bipolar npn transistor or N-type metal-oxide half field effect transistor.
CN201410798180.2A 2014-12-19 2014-12-19 Switching circuit for voltage conversion Pending CN104660042A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1568568A (en) * 2001-08-23 2005-01-19 费查尔德半导体有限公司 Method and circuit for reducing losses in DC-DC converters
CN1581658A (en) * 2003-08-04 2005-02-16 马维尔国际贸易有限公司 Split gate drive scheme to improve reliable voltage operation range
CN1967991A (en) * 2005-11-14 2007-05-23 广达电脑股份有限公司 DC-DC convertor
CN101997311A (en) * 2009-08-19 2011-03-30 株式会社理光 Electrostatic discharge protection circuit, control method therefor, and switching regulator using same
TW201438390A (en) * 2013-03-22 2014-10-01 Richtek Technology Corp Apparatus and method for avoiding conduction of parasitic devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1568568A (en) * 2001-08-23 2005-01-19 费查尔德半导体有限公司 Method and circuit for reducing losses in DC-DC converters
CN1581658A (en) * 2003-08-04 2005-02-16 马维尔国际贸易有限公司 Split gate drive scheme to improve reliable voltage operation range
CN1967991A (en) * 2005-11-14 2007-05-23 广达电脑股份有限公司 DC-DC convertor
CN101997311A (en) * 2009-08-19 2011-03-30 株式会社理光 Electrostatic discharge protection circuit, control method therefor, and switching regulator using same
TW201438390A (en) * 2013-03-22 2014-10-01 Richtek Technology Corp Apparatus and method for avoiding conduction of parasitic devices

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Application publication date: 20150527