CN104659143A - Optical sensor as well as manufacturing method of optical sensor - Google Patents
Optical sensor as well as manufacturing method of optical sensor Download PDFInfo
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- CN104659143A CN104659143A CN201510054958.3A CN201510054958A CN104659143A CN 104659143 A CN104659143 A CN 104659143A CN 201510054958 A CN201510054958 A CN 201510054958A CN 104659143 A CN104659143 A CN 104659143A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention provides an optical sensor as well as a manufacturing method of the optical sensor. The optical sensor comprises a base plate, a control element and a photosensitive element, wherein the control element comprises a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode; the photosensitive element comprises a lower electrode, an SRO thin film layer and a first transparent conductive layer; the lower electrode is coupled to the drain electrode through a first opening; the first transparent conductive layer is coupled to a second transparent conductive layer through a second opening; the process step of the SRO thin film layer is earlier than the process step of the oxide semiconductor layer. Compared with the prior art, in the process step, the SRO thin film layer is formed firstly and then the oxide semiconductor layer is formed. As hydrogen used when the SRO thin film is deposited does not affect the element characteristics of the oxide semiconductor layer, the threshold voltage of a control element is free of negative drift. In addition, the SRO thin film is protected by the gate insulating layer, and the subsequent low-temperature process procedure does not affect the characteristics of the SRO thin film.
Description
Technical field
The present invention relates to a kind of sensing detection technology, particularly relate to a kind of optical pickocff and manufacture method thereof.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display, TFT-LCD) have that high image quality, volume are little, lightweight, the advantage such as low voltage drive, low consumpting power, therefore be widely used in portable television, mobile phone, shoot with video-corder projector, in the consumer electronics such as notebook computer, console display and projection TV or computer product, become the main flow of display.Accordingly, TFT liquid crystal display screen refers to that each pixel on liquid crystal panel is driven by the thin-film transistor be integrated in thereafter.Common TFT drives classification to mainly contain a-Si TFT (amorphous silicon), LTPS TFT (low temperature polycrystalline silicon), and adopts the TFT of IGZO technology to be exactly one during amorphous silicon drives.At this, the abbreviation that IGZO (Indium Gallium Zinc Oxide) is indium gallium zinc oxide, amorphous IGZO material is for the channel layer materials in thin-film transistor technologies of new generation, is the one of metal oxide panel technology.
IGZO technology is utilized to manufacture the channel layer materials of thin-film transistor, display screen power consumption can be made less, cost is lower, and resolution can reach the rank degree of full HD (full HD) and even ultra high-definition (UltraDefinition, resolution 4k*2k).This IGZO TFT solves the defect of traditional TFT, and it is insensitive to visible ray, greatly can increase the aperture opening ratio of assembly, improves brightness and reduces power consumption.
But, in the prior art, the optical pickocff (photo sensor) utilizing IGZO TFT to combine with SRO thin layer to make, processing procedure carries out in vertical stacking mode, first make SRO assembly on TFT assembly and then storehouse, the threshold voltage of the reading TFT of IGZO material can be caused like this to occur negative drift, cause the noise reading TFT higher, and then affect the quality of optical pickocff.
In view of this, how designing a kind of new optical pickocff or improve existing optical pickocff, to eliminate above-mentioned defect or deficiency, is the problem that person skilled is urgently to be resolved hurrily in the industry.
Summary of the invention
For the above-mentioned defect that optical pickocff of the prior art exists on processing procedure, that the invention provides a kind of novelty, that sensing quality can be promoted optical pickocff and manufacture method thereof.
According to one aspect of the present invention, provide a kind of optical pickocff, comprising:
One substrate;
One control element, be arranged on described substrate, described control element comprises:
One gate electrode, is positioned at a first metal layer;
One gate insulator, is positioned at the top of described the first metal layer;
Monoxide semiconductor layer, is positioned at the top of described gate insulator; And
One source pole electrode and a drain electrode, be positioned at one second metal level, and this source electrode and this drain electrode correspond to described oxide semiconductor layer and arrange; And a photo-sensitive cell, be arranged on described substrate, described photo-sensitive cell comprises:
One bottom electrode, is positioned at described the first metal layer, and described bottom electrode is electrically coupled to described drain electrode by one first opening;
One SRO thin layer, is positioned at the top of described bottom electrode; And
One first transparency conducting layer, is positioned at the top of described SRO thin layer, and described first transparency conducting layer is coupled to one second transparency conducting layer by one second opening, and wherein, the fabrication steps of described SRO thin layer is early than the fabrication steps of described oxide semiconductor layer.
An embodiment wherein, described optical pickocff also comprises a flatness layer, in order to cover described gate insulator and described second metal level.
An embodiment wherein, this first opening is formed at described gate insulator, exposes the bottom electrode of described photo-sensitive cell with part.
An embodiment wherein, described second opening is formed at described flatness layer and described gate insulator, exposes described first transparency conducting layer with part.
An embodiment wherein, described oxide semiconductor layer is made by indium gallium zinc oxide (IGZO).
An embodiment wherein, described control element is a thin-film transistor.
According to another aspect of the present invention, provide a kind of manufacture method of optical pickocff, described optical pickocff comprises a control element and a photo-sensitive cell, and this manufacture method comprises the following steps:
Form a first metal layer of patterning, wherein, the part of described the first metal layer is as the gate electrode of described control element, and another part is as the bottom electrode of described photo-sensitive cell;
Form a SRO thin layer and the first transparency conducting layer in the top of described bottom electrode;
Form a gate insulator to cover described gate electrode, the part of described bottom electrode and described first transparency conducting layer;
Form monoxide semiconductor layer in the top of described gate insulator, and described oxide semiconductor layer in the vertical direction is positioned on described gate electrode;
In described gate insulator, form one first opening, expose the bottom electrode of described photo-sensitive cell with part; And
Form one second metal level in the top of described gate insulator, to form one source pole electrode and a drain electrode, wherein stacking described gate electrode, described gate insulator, described oxide semiconductor layer, described source electrode and described drain electrode form described control element, and described drain electrode is electrically coupled to the bottom electrode of described photo-sensitive cell through described first opening.
An embodiment wherein, above-mentioned formation second metal level is after the step of the top of described gate insulator, and described manufacture method also comprises: form a flatness layer to cover described gate insulator and described second metal level; In described flatness layer and described gate insulator, form one second opening, expose described first transparency conducting layer with part; And form one second transparency conducting layer in the part surface of described flatness layer, and be electrically coupled to described first transparency conducting layer by described second opening.
An embodiment wherein, after the step of above-mentioned formation oxide semiconductor layer above described gate insulator, described manufacture method also comprises: form an etching stopping layer in the top of described oxide semiconductor layer.
An embodiment wherein, described oxide semiconductor layer is made by indium gallium zinc oxide (IGZO).
Adopt optical pickocff of the present invention and manufacture method thereof, first form the gate electrode of the first metal layer respectively as control element and the bottom electrode of photo-sensitive cell of patterning, form a SRO thin layer and the first transparency conducting layer again in the top of bottom electrode, form the top of oxide semiconductor layer in gate insulator of such as IGZO afterwards, last first opening that formed in gate insulator with the bottom electrode of part exposure photo-sensitive cell, and forms the second metal level in the top of gate insulator to produce one source pole electrode and a drain electrode.Compared to prior art, optical pickocff of the present invention first forms SRO thin layer on processing procedure, rear formation oxide semiconductor layer, because the hydrogen used during SRO thin film deposition can not affect the element characteristic of oxide semiconductor layer, thus can't there is negative drift in the threshold voltage of the TFT of oxide semiconductor layer formation.In addition, SRO film is subject to the protection of gate insulator, and follow-up low temperature process also can not affect the characteristic of SRO film.
Accompanying drawing explanation
Reader, after having read the specific embodiment of the present invention with reference to accompanying drawing, will become apparent various aspects of the present invention.Wherein,
Figure 1A illustrates that existing optical pickocff forms the schematic diagram of the first metal layer in the fabrication process;
Figure 1B illustrates that existing optical pickocff forms the schematic diagram of oxide semiconductor layer in the fabrication process;
Fig. 1 C illustrates that existing optical pickocff forms the schematic diagram of etching stopping layer in the fabrication process;
Fig. 1 D illustrates that existing optical pickocff forms the schematic diagram of the second metal level in the fabrication process;
Fig. 1 E illustrates that existing optical pickocff forms the schematic diagram of insulating barrier in the fabrication process;
Fig. 1 F illustrates that existing optical pickocff forms the schematic diagram of the first transparency conducting layer in the fabrication process;
Fig. 1 G illustrates that existing optical pickocff forms the schematic diagram of SRO film in the fabrication process;
Fig. 1 H illustrates that existing optical pickocff forms the schematic diagram of flatness layer in the fabrication process;
Fig. 1 I illustrates that existing optical pickocff forms the schematic diagram of the second transparency conducting layer in the fabrication process;
Fig. 2 illustrates the curve comparison figure that the processing procedure sequencing of SRO film in optical pickocff and oxide semiconductor layer affects the threshold voltage of thin-film transistor;
Fig. 3 illustrates the FB(flow block) of the manufacture method of the optical pickocff according to an embodiment of the present invention;
Fig. 4 A illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the first metal layer;
Fig. 4 B illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the first transparency conducting layer;
Fig. 4 C illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form SRO film;
Fig. 4 D illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form oxide semiconductor layer;
Fig. 4 E illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form etching stopping layer;
Fig. 4 F illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the first opening;
Fig. 4 G illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the second metal level;
Fig. 4 H illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form flatness layer; And
Fig. 4 I illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the second transparency conducting layer.
Embodiment
The technology contents disclosed to make the application is more detailed and complete, and can refer to accompanying drawing and following various specific embodiment of the present invention, mark identical in accompanying drawing represents same or analogous assembly.But those of ordinary skill in the art should be appreciated that hereinafter provided embodiment is not used for limiting the scope that contains of the present invention.In addition, accompanying drawing, only for being schematically illustrated, is not drawn according to its life size.
With reference to the accompanying drawings, the embodiment of various aspects of the present invention is described in further detail.
Figure 1A ~ Fig. 1 I is the decomposing schematic representation of the manufacture process of existing optical pickocff.As a rule, optical pickocff comprises a control element and a photo-sensitive cell.In existing processing procedure, first provide a substrate 100, and form a first metal layer above this substrate 100.The part of this first metal layer in order to the gate electrode 200 of formation control element (such as thin-film transistor), another part in order to form the bottom electrode 300 of photo-sensitive cell, as shown in Figure 1A.Then, above the first metal layer, gate insulator 102 is formed, with covered substrate 100, gate electrode 200 and bottom electrode 300.Oxide semiconductor layer 202 is formed at the top of gate insulator 102, as shown in Figure 1B.
In fig. 1 c, form an etching stopping layer (Etching Stop Layer, ESL) 204 in the top of oxide semiconductor layer 202, this etching stopping layer 204 at vertical direction and gate electrode 200 just to setting.As shown in figure ip, form one second metal level with a part for capping oxide semiconductor layer 202 and gate insulator 102, and expose a part for etching stopping layer 204.Source electrode 206 and the drain electrode 208 of thin-film transistor is defined through this second metal level.
In fig. ie, form the insulating barrier 210 of a patterning, with a part for a part for cover gate insulating barrier 102, source electrode 206 and drain electrode 208.While like this, this insulating barrier 210 also exposes another part of drain electrode 208, this part drain electrode 208 at vertical direction and bottom electrode 300 just to setting.As shown in fig. 1f, a SRO (that is, SrRuO is formed
3) thin layer 212 above insulating barrier 210, and forms one first transparency conducting layer (first transparent conductive layer) 302 in the relevant position of SRO thin layer 212.Such as, this first transparency conducting layer 302 can be indium tin oxide.Then, Mask processing procedure is carried out to SRO thin layer 212, so as only retain drain electrode 208 expose portion above SRO film, as shown in Figure 1 G.
In Fig. 1 H, form a flatness layer (planarization layer) 104 to cover insulating barrier 210 and to expose the first transparency conducting layer 302.Finally, form one second transparency conducting layer (secondtransparent conductive layer) 304 in the top of flatness layer 104, this second transparency conducting layer 304 is electrically coupled to the first transparency conducting layer 302 by opening.
Fig. 2 illustrates the curve comparison figure that the processing procedure sequencing of SRO film in optical pickocff and oxide semiconductor layer affects the threshold voltage of thin-film transistor.In fig. 2, when solid line represents SRO thin film layer step prior to oxide semiconductor layer forming step, the threshold voltage of thin-film transistor and the graph of relation of electric current; When dotted line represents that SRO thin film layer step is later than oxide semiconductor layer forming step, the threshold voltage of thin-film transistor and the graph of relation of electric current.As can be seen from Figure 2, when making after SRO thin layer, CVD (Chemical Vapor Deposition, chemical vapour deposition (CVD)) hydrogen in fabrication steps will cause threshold voltage to occur negative drift, and then the noise of reading thin-film transistor when causing sensor output data is higher, affects the quality of optical pickocff.
For the above-mentioned defect of prior art, the present invention proposes a kind of manufacturing method thereof of optical pickocff, impacts to avoid the element characteristic of the hydrogen of CVD processing procedure to thin-film transistor.Particularly, Fig. 3 illustrates the FB(flow block) of the manufacture method of the optical pickocff according to an embodiment of the present invention.Fig. 4 A illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the first metal layer; Fig. 4 B illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the first transparency conducting layer; Fig. 4 C illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form SRO film; Fig. 4 D illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form oxide semiconductor layer; Fig. 4 E illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form etching stopping layer; Fig. 4 F illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the first opening; Fig. 4 G illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the second metal level; Fig. 4 H illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form flatness layer; And Fig. 4 I illustrates the schematic diagram adopting the manufacture method of Fig. 3 to form the second transparency conducting layer.
With reference to Fig. 3, in this manufacturing method thereof, first perform step S101, form the first metal layer of patterning, wherein a part for this first metal layer is as the gate electrode of control element, and another part is as the bottom electrode of photo-sensitive cell.Then, in step s 103, a SRO thin layer and the first transparency conducting layer is formed in the top of bottom electrode.Then, in step S105, form a gate insulator with a part for cover gate electrode, bottom electrode and the first transparency conducting layer.Then, in step s 107, form monoxide semiconductor layer in the top of gate insulator, and this oxide semiconductor layer in the vertical direction is positioned on gate electrode.Such as, this oxide semiconductor layer is made by indium gallium zinc oxide (IGZO).Then, in step S109, in gate insulator, form one first opening, expose the bottom electrode of photo-sensitive cell with part.Finally perform step S111, form one second metal level in the top of gate insulator, to form one source pole electrode and a drain electrode, wherein stacking gate electrode, gate insulator, oxide semiconductor layer, source electrode and drain electrode form above-mentioned control element, and this drain electrode is electrically coupled to the bottom electrode of photo-sensitive cell through the first opening.
With reference to Fig. 3 composition graphs 4A ~ 4I, first a substrate 400 is provided, and forms a first metal layer above this substrate 400.The part of this first metal layer in order to the gate electrode 500 of formation control element (such as thin-film transistor), another part in order to form the bottom electrode 600 of photo-sensitive cell, as shown in Figure 4 A.In figure 4b, a SRO (that is, SrRuO is formed
3) thin layer 402 in the top of substrate 400 and the first metal layer, and forms one first transparency conducting layer (first transparent conductive layer) 602 in the relevant position of SRO thin layer 402.Such as, this first transparency conducting layer 602 can be indium tin oxide.Then, Mask processing procedure is carried out to SRO thin layer 402, only to retain a part of SRO film above electrode 600, as shown in Figure 4 C.In fig. 4d, above the first metal layer, form gate insulator 404, with a part for covered substrate 400, gate electrode 500 and bottom electrode 600.Then above gate insulator 404, monoxide semiconductor layer 502 is formed.At a specific embodiment, this manufacture method also comprises the step of formation one etching stopping layer 504 above oxide semiconductor layer 502, as shown in Figure 4 E.
In Fig. 4 F, form the first opening P1 on gate insulator 404, expose the bottom electrode 600 of photo-sensitive cell with part.As shown in Figure 4 G, form one second metal level with a part for capping oxide semiconductor layer 502 and gate insulator 404, and expose a part for etching stopping layer 504.Source electrode 506 and the drain electrode 508 of thin-film transistor is defined through this second metal level.Thus, drain electrode 508 can be electrically coupled to the bottom electrode 600 of photo-sensitive cell by the first opening P1.
At a specific embodiment, this manufacturing method thereof also comprises formation one flatness layer 406 with cover gate insulating barrier 404 and the second metal level, then in flatness layer 406 and gate insulator 404, form one second opening P2, expose the first transparency conducting layer 602 (as shown at figure 4h) with part.In addition, after formation flatness layer 406 and the second opening P2, also can form one second transparency conducting layer 408 in the part surface of flatness layer 406, and be electrically coupled to the first transparency conducting layer 602 (as shown in fig. 41) by the second opening P2.
It will be understood by those of skill in the art that Fig. 4 I ~ Fig. 4 H not only can describe the processing procedure decomposing schematic representation of optical pickocff of the present invention, also can disclose optical sensor structure of the present invention.Specifically, optical pickocff of the present invention comprises substrate 400, control element and a photo-sensitive cell.
Control element is arranged on substrate 400, and this control element comprises gate electrode 500, gate insulator 404, monoxide semiconductor layer 502, drain electrode 506 and a drain electrode 508.Gate electrode 500 is positioned at a first metal layer.Gate insulator 404 is positioned at the top of the first metal layer.Oxide semiconductor layer 502 is positioned at the top of gate insulator 404.Source electrode 506 and drain electrode 508 are positioned at one second metal level, and this source electrode 506 corresponds to oxide semiconductor layer 502 with this drain electrode 508 and arranges.
Photo-sensitive cell is arranged on substrate 400, and this photo-sensitive cell comprises bottom electrode 600, SRO film 402,1 first transparency conducting layer 602.Bottom electrode 600 is positioned at the first metal layer, and this bottom electrode 600 is electrically coupled to drain electrode 508 by one first opening P1.SRO film 402 is positioned at the top of bottom electrode 600.First transparency conducting layer 602 is positioned at the top of SRO film 402.First transparency conducting layer 602 is coupled to one second transparency conducting layer 408 by one second opening P2.Further, the fabrication steps of SRO thin layer 402 is early than the fabrication steps of oxide semiconductor layer 502.
Adopt optical pickocff of the present invention and manufacture method thereof, first form the gate electrode of the first metal layer respectively as control element and the bottom electrode of photo-sensitive cell of patterning, form a SRO thin layer and the first transparency conducting layer again in the top of bottom electrode, form the top of oxide semiconductor layer in gate insulator of such as IGZO afterwards, last first opening that formed in gate insulator with the bottom electrode of part exposure photo-sensitive cell, and forms the second metal level in the top of gate insulator to produce one source pole electrode and a drain electrode.Compared to prior art, optical pickocff of the present invention first forms SRO thin layer on processing procedure, rear formation oxide semiconductor layer, because the hydrogen used during SRO thin film deposition can not affect the element characteristic of oxide semiconductor layer, thus can't there is negative drift in the threshold voltage of the TFT of oxide semiconductor layer formation.In addition, SRO film is subject to the protection of gate insulator, and follow-up low temperature process also can not affect the characteristic of SRO film.
Above, the specific embodiment of the present invention is described with reference to the accompanying drawings.But those skilled in the art can understand, when without departing from the spirit and scope of the present invention, various change and replacement can also be done to the specific embodiment of the present invention.These change and replace and all drop in claims of the present invention limited range.
Claims (10)
1. an optical pickocff, is characterized in that, described optical pickocff comprises:
One substrate;
One control element, be arranged on described substrate, described control element comprises:
One gate electrode, is positioned at a first metal layer;
One gate insulator, is positioned at the top of described the first metal layer;
Monoxide semiconductor layer, is positioned at the top of described gate insulator; And
One source pole electrode and a drain electrode, be positioned at one second metal level, and this source electrode and this drain electrode correspond to described oxide semiconductor layer and arrange; And
One photo-sensitive cell, be arranged on described substrate, described photo-sensitive cell comprises:
One bottom electrode, is positioned at described the first metal layer, and described bottom electrode is electrically coupled to described drain electrode by one first opening;
One SRO thin layer, is positioned at the top of described bottom electrode; And
One first transparency conducting layer, is positioned at the top of described SRO thin layer, and described first transparency conducting layer is coupled to one second transparency conducting layer by one second opening,
Wherein, the fabrication steps of described SRO thin layer is early than the fabrication steps of described oxide semiconductor layer.
2. optical pickocff according to claim 1, is characterized in that, described optical pickocff also comprises a flatness layer, in order to cover described gate insulator and described second metal level.
3. optical pickocff according to claim 1, is characterized in that, this first opening is formed at described gate insulator, exposes the bottom electrode of described photo-sensitive cell with part.
4. optical pickocff according to claim 1, is characterized in that, described second opening is formed at described flatness layer and described gate insulator, exposes described first transparency conducting layer with part.
5. optical pickocff according to claim 1, is characterized in that, described oxide semiconductor layer is made by indium gallium zinc oxide.
6. optical pickocff according to claim 1, is characterized in that, described control element is a thin-film transistor.
7. a manufacture method for optical pickocff, described optical pickocff comprises a control element and a photo-sensitive cell, it is characterized in that, described manufacture method comprises the following steps:
Form a first metal layer of patterning, wherein, the part of described the first metal layer is as the gate electrode of described control element, and another part is as the bottom electrode of described photo-sensitive cell;
Form a SRO thin layer and the first transparency conducting layer in the top of described bottom electrode;
Form a gate insulator to cover described gate electrode, the part of described bottom electrode and described first transparency conducting layer;
Form monoxide semiconductor layer in the top of described gate insulator, and described oxide semiconductor layer in the vertical direction is positioned on described gate electrode;
In described gate insulator, form one first opening, expose the bottom electrode of described photo-sensitive cell with part; And
Form one second metal level in the top of described gate insulator, to form one source pole electrode and a drain electrode, wherein stacking described gate electrode, described gate insulator, described oxide semiconductor layer, described source electrode and described drain electrode form described control element, and described drain electrode is electrically coupled to the bottom electrode of described photo-sensitive cell through described first opening.
8. the manufacture method of optical pickocff according to claim 7, is characterized in that, above-mentioned formation second metal level is after the step of the top of described gate insulator, and described manufacture method also comprises:
Form a flatness layer to cover described gate insulator and described second metal level;
In described flatness layer and described gate insulator, form one second opening, expose described first transparency conducting layer with part; And
Form one second transparency conducting layer in the part surface of described flatness layer, and be electrically coupled to described first transparency conducting layer by described second opening.
9. the manufacture method of optical pickocff according to claim 7, is characterized in that, after the step of above-mentioned formation oxide semiconductor layer above described gate insulator, described manufacture method also comprises:
Form an etching stopping layer in the top of described oxide semiconductor layer.
10. the manufacture method of optical pickocff according to claim 1, is characterized in that, described oxide semiconductor layer is made by indium gallium zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510054958.3A CN104659143A (en) | 2015-02-03 | 2015-02-03 | Optical sensor as well as manufacturing method of optical sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510054958.3A CN104659143A (en) | 2015-02-03 | 2015-02-03 | Optical sensor as well as manufacturing method of optical sensor |
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| CN104659143A true CN104659143A (en) | 2015-05-27 |
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Application publication date: 20150527 |