CN104656368A - Extreme Ultraviolet Lithography Process And Mask - Google Patents

Extreme Ultraviolet Lithography Process And Mask Download PDF

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Publication number
CN104656368A
CN104656368A CN201410677613.9A CN201410677613A CN104656368A CN 104656368 A CN104656368 A CN 104656368A CN 201410677613 A CN201410677613 A CN 201410677613A CN 104656368 A CN104656368 A CN 104656368A
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China
Prior art keywords
multilayer
mask
euv
euvr
leuvr
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CN201410677613.9A
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Chinese (zh)
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CN104656368B (en
Inventor
卢彦丞
游信胜
陈政宏
严涛南
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Priority claimed from US14/087,508 external-priority patent/US9146459B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials

Abstract

A low EUV reflectivity mask includes a low thermal expansion material (LTEM) layer, a low EUV reflectivity (LEUVR) multilayer over the LTEM layer in a first region, a high EUV reflectivity (HEUVR) multilayer over the LTEM layer in a second region and a patterned absorption layer over the LEUVR multilayer and the HEUVR multilayer. The present invention also relates to an extreme ultraviolet lithography process and a mask.

Description

Extreme ultraviolet light carving technology and mask
Technical field
The present invention relates to extreme ultraviolet light carving technology and mask.
Cross reference
The name submitted in present patent application and on September 6th, 2013 is called the U.S. the 14/020th of " extreme ultraviolet light carving technology and mask ", and be correlated with for No. 302, its full content is incorporated herein by reference.
Background technology
SIC (semiconductor integrated circuit) (IC) industry in the past few decades in experienced by quick growth.Semiconductor material and the technical progress in designing have produced more and more less and more complicated circuit.Due to processing with manufacture relevant technology and also experience technical progress, these material and design progress become possibility.Along with device component size (such as grid length) reduces, bring many challenges.High resolution lithography technique normally reduces more importantly one of field of part dimension, and the general improvement expected in this field.A kind of photoetching technique is extreme ultraviolet (EUV) photoetching.Other technologies comprise X-X-ray lithography X, ion beam projection lithography, electron beam projection lithography and multi electron beam maskless lithography.
For having the semiconductor technology node of very little part dimension (such as 14nm) and higher node, EUV lithography is promising patterning techniques.Owing to using mask transfer printing wafer, therefore EUV lithography and optical lithography closely similar.But different from optical lithography, EUV uses the light in EUV district, such as, at about 13.5nm.At 13.5nm wavelength place, many materials are high absorption.Therefore, usually in EUV lithography, reflective optical device instead of diffractive optical devices is used.Although the existing method of EUV lithography is enough for its expection object substantially, it is not all satisfactory in all respects.Such as, by the EUV light of plasma generation, such as DPP (plasma that electric discharge produces) and LPP (laser-produced plasma) launches outer (OOB) radiation of some bands.A part (being sometimes referred to as credit light) for OOB radiation also can arrive target substrate (such as wafer) and cause picture contrast to be lost.Therefore the further improvement in this field is expected.
Summary of the invention
In order to solve the problems of the prior art, the invention provides a kind of low extreme ultraviolet reflection (LEUVR) mask and comprising: low thermal expansion material (LTEM) layer; Low extreme ultraviolet reflection (LEUVR) multilayer, above the firstth district being positioned at described LTEM floor; Farsighted ultraviolet reflectance (HEUVR) multilayer, is positioned at the top in secondth district of described LTEM; And the absorption layer of patterning, be positioned at the top of described LEUVR multilayer and described HEUVR multilayer.
In aforementioned mask, wherein, described LEUVR multilayer has the EUV reflectivity being less than 2%.
In aforementioned mask, wherein, described HEUVR multilayer has the EUV reflectivity being greater than 30%.
In aforementioned mask, wherein, described LEUVR multilayer comprises 40 films pair, and each film is to comprising the first film and the second film, and described first film comprises the silicon (Si) that the molybdenum (Mo) of about 1.5nm and described second film comprise about 2nm.
In aforementioned mask, wherein, described LEUVR multilayer comprises 40 films pair, and each film is to comprising the first film and the second film, and described first film comprises the silicon (Si) that the molybdenum (Mo) of about 4.5nm and described second film comprise about 6nm.
In aforementioned mask, wherein, described LEUVR multilayer comprises molybdenum silicon (MoSi) layer of about 280nm thickness.
In aforementioned mask, also comprise: overlayer, be positioned at the top of described LEUVR multilayer and described HEUVR multilayer.
In aforementioned mask, also comprise: overlayer, be positioned at the top of described LEUVR multilayer and described HEUVR multilayer; Wherein, described overlayer comprises the ruthenium (Ru) of about 2.5nm thickness.
In aforementioned mask, wherein, described secondth district is around described firstth district.
In aforementioned mask, wherein, the absorption layer of described patterning comprises the tantalum boron nitride (TaBN) of about 70nm thickness.
In aforementioned mask, wherein, the absorption layer of described patterning comprises the tantalum oxide boron (TaBO) of the thick tantalum boron nitride of about 56nm (TaBN) and the about 14nm thickness at the disposed thereon of described TaBN layer.
In aforementioned mask, wherein, described HEUVR multilayer comprises 40 to the film of silicon (Si) with the molybdenum (Mo) of about 3nm thickness and about 4nm thickness.
According to another aspect of the present invention, provide a kind of deep ultraviolet lithography (EUVL) technique to comprise: receive and there is at least one figuratum mask pair altogether, described mask is to comprising: extreme ultraviolet (EUV) mask, has an EUV reflectivity r 1; And low EUV reflectivity mask, there is the 2nd EUV reflectivity r 2; Receive the substrate being coated with photoresist layer; Receive the EUV scanner being equipped with EUV radiation; By utilizing described EUV scanner and described EUV mask to implement the first exposure technology to substrate, wherein, described first exposure technology is performed according to the first exposure dose matrix; And by utilizing described EUV scanner and described low EUV reflectivity mask to implement the second exposure technology to substrate, wherein, perform described second exposure technology according to the second exposure dose matrix.
In above-mentioned technique, wherein, perform described first exposure technology according to described first exposure dose matrix to implement as follows: the N district exposing described substrate, each district (" n ", in the scope of 1 to N) receive according to the different exposure doses of following formula: Eop – (n-1) Δ, wherein Δ=r 2/ r 1the exposure dose that × Eop and Eop=optimize.
In above-mentioned technique, wherein, perform described second exposure technology according to described second exposure dose matrix to implement as follows: the N district exposing described substrate, each district (" n ", in the scope of 1 to N) receives the different exposure doses according to following formula: (n-1) Eop.
In above-mentioned technique, wherein, each district of described substrate receives total exposure dosage, and described total exposure dosage is the combination of the exposure dose received in described first exposure technology and described second exposure technology.
In above-mentioned technique, wherein, each district of described substrate receives total exposure dosage, and described total exposure dosage is the combination of the exposure dose received in described first exposure technology and described second exposure technology; Wherein, each district of described substrate receives the exposure dose of substantially the same amount from described EUV radiation.
In above-mentioned technique, wherein, each district of described substrate receives total exposure dosage, and described total exposure dosage is the combination of the exposure dose received in described first exposure technology and described second exposure technology; Wherein, each district of described substrate receives the exposure dose of substantially the same amount from described EUV radiation; Wherein, each district of described substrate receives substantially different exposure doses from (OOB) radiation deep ultraviolet (DUV) band of described EUV radiation.
In above-mentioned technique, wherein, each district of described substrate receives total exposure dosage, and described total exposure dosage is the combination of the exposure dose received in described first exposure technology and described second exposure technology; Wherein, each district of described substrate receives the exposure dose of substantially the same amount from described EUV radiation; Also comprise: the critical dimension (CD) measuring each district of described substrate; Draw the chart of summation of CD to described first exposure and the described second exposure dose exposed to determine the Trendline of CD to DUV OOB radiation level; And utilize described chart, determine the DUV credit influence of light in the described EUV mask that described EUV scanner exposes.
According to a further aspect of the invention, provide a kind of low extreme ultraviolet reflection (LEUVR) mask to comprise: low thermal expansion material (LTEM) layer; First extreme ultraviolet reflectivity (EUVR) multilayer, is positioned at above described LTEM layer, has the EUV reflectivity being greater than 30%; Second extreme ultraviolet reflectivity (EUVR) multilayer, be positioned at the part top of a described EUVR to form the 3rd EUVR multilayer, described 3rd EUVR multilayer has as a described EUVR of described 3rd EUVR multi-layer bottom and described 2nd EUVR as described 3rd EUVR multilayer top, wherein, described 3rd EUVR multilayer has the EUV reflectivity being less than 2%; And the absorption layer of patterning, be positioned at above a described EUVR multilayer and described 2nd EUVR multilayer.
Accompanying drawing explanation
When reading in conjunction with the accompanying drawings, the present invention may be better understood according to the following detailed description.It is emphasized that according to the standard practices in industry, various parts be not drawn to scale and only for illustration of object.In fact, in order to clearly discuss, the size of various parts can be arbitrarily increased or reduce.
Fig. 1 is the block diagram of the photoetching process for performing one or more embodiment of the present invention.
Fig. 2 is the schematic sectional view of the mask substrate in each stage being in the photoetching process built according to aspects of the present invention.
Fig. 3 is the schematic sectional view of low EUV reflectivity (LEUVR) mask in each stage being in the photoetching process built according to aspects of the present invention.
Fig. 4 is the schematic sectional view of the EUV mask in each stage being in the photoetching process built according to aspects of the present invention.
Fig. 5 is to shine the process flow diagram of exemplary method of influence of light for evaluating deep ultraviolet (DUV) according to various aspects of the present invention.
Fig. 6 A and Fig. 6 B is the top schematic diagram utilizing the different mask patterning substrates in the method for Fig. 5 according to various aspects of the present invention.
Fig. 7 is that critical dimension (CD) according to various aspects of the present invention is shone to DUV the chart of light.
Embodiment
In order to implement different parts of the present invention, the invention provides many different embodiments or example.The particular instance of element and layout is below described to simplify the present invention.Certainly these are only that example does not intend to limit.Such as, in below describing first component to be formed in above second component or on can comprise wherein the first and second parts directly to contact the embodiment of formation, and also can comprise wherein extra parts and be formed into embodiment in the first and second parts, thus the first and second parts are not directly contacted.Moreover the present invention can repeat reference number and/or letter in various embodiments.This repeats to be for the sake of simplicity with clear, and itself does not specify the relation between described various embodiment and/or structure.
In addition, can use in this article such as " below ", " ... under ", bottom ", " ... on ", the space relative terms on " top " etc. is so that instructions describes the relation of the element of shown in accompanying drawing or parts and another (a bit) element or parts.Space relative terms intention contains the different azimuth except the orientation shown in accompanying drawing of the device used or in operation.Such as, if the device upset in accompanying drawing, be then described as the element of other elements or parts " under " or " below " can be positioned in other elements or parts " on ".Therefore, exemplary term " ... under " can contain on and under two kinds of orientation.Device can with other azimuthal orientations (90-degree rotation or be in other orientation) and space used herein relative descriptors can correspondingly explain in a similar fashion.
With reference to Fig. 1, disclose the EUV lithography technique 10 that can benefit from one or more embodiment of the present invention.EUV lithography technique 10 uses EUV radiation source 20, comprises the EUV wavelength of about 13.5nm.
EUV lithography technique 10 also uses luminaire 30.Luminaire 30 can comprise reflective optical device, such as single mirror or have the mirror system of multiple mirror so that in the future the light in autoradiolysis source 20 is directed on mask 40.In EUV wavelength range, usually use reflective optical device.But diffractive optical devices also can be realized by zone plate.
EUV lithography technique 10 also can use mask 40 (term mask used herein, photomask and reticle mask refer to identical article) or multiple mask.In the present embodiment, mask 40 is reflection masks.Mask 40 can in conjunction with other resolution enhance technology, such as optical near-correction (OPC).Below mask 40 will be described in further detail.
EUV lithography system and technique 10 also use projection optics case (POB) 50.POB 50 can have diffractive optical devices or reflective optical device.POB 50 collects the radiation (such as, the radiation of patterning) of reflecting from mask 40.
Target 60 comprises the semiconductor crystal wafer had the radiosensitive photosensitive layer of EUV (such as, photoresist layer or resist).Target 60 can pass through target substrate worktable support.Target substrate worktable provides target substrate position and controls thus make the image of mask be scanned up to (but other photoetching methods are also feasible) in target substrate in a repetitive fashion.
EUV exposure light source can comprise some out-of-band radiations (OOB) and this radiation of a part can arrive crystal column surface (being sometimes referred to as credit light) and cause the decline of picture contrast.Compared with EUV, the OOB radiation that can arrive crystal column surface may have longer wavelength, such as deep ultraviolet (DUV) wavelength.Therefore, the stray light level of DUV credit light may be more much lower than the stray light level of EUV.In EUV lithography technique, in order to better optical analogy and prediction, the impact evaluating DUV credit light and the strategy forming this impact of compacting are important.And, the parasitic light that the DUV credit light in EUV scanner may be local credit light instead of be caused by non-pure illumination wavelengths.The impact of the DUV credit light of the type may depend on such as mask arrangement and pattern density.The method evaluated this local credit light and distinguish dissimilar credit light is below described.
Below describe and relate to mask 40 and mask-making technology.Mask-making technology generally includes two steps: mask substrate manufacturing process and mask pattern metallization processes.Mask substrate is formed by stacking (such as, multiple reflection horizon) of layer.During mask pattern metallization processes, pattern mask substrate is to have the design of integrated circuit (IC) device (or chip) layer.Then utilize the mask transfer printing circuit pattern (such as the design of the layer of IC device) of patterning on semiconductor crystal wafer.By various photoetching process, pattern can be transferred on multiple wafer repeatedly.Multiple mask (such as, one group more than 50 masks) may be used for building complete IC device.
With reference to Fig. 2, mask substrate 100 comprises the material layer 102 be made up of low thermal expansion material (LTEM).LTEM material comprises TiO 2, doping SiO 2, and/or other low thermal expansion materials well known in the art.LTEM layer 102 heats the image fault caused for minimizing mask.In the present embodiment, LTEM layer 102 comprises the material with low defect level and smooth surface.In addition, conductive layer 104 can be deposited on below LTEM layer 102 (as shown in drawings) for electrostatic clamp mask.In an embodiment, conductive layer 104 comprises chromium nitride (CrN), but other components are also possible.
In the present embodiment, mask substrate 100 has Liang Ge district, the first district 110 and the second district 120.Second district 120 comprises the marginarium of mask substrate 100.In the first district 110, low EUV reflects (LEUVR) multilayer 130 and is formed above LTEM layer 102.Such as, the reflectivity of LEUVR multilayer 130 is less than 2%.In one embodiment, LEUVR multilayer 130 comprises the film of 40 pairs of 1.5nm molybdenums (Mo) and 2nm silicon (Si).In another embodiment, LEUVR multilayer 130 comprises 280nm MoSi.In another embodiment, LEUVR multilayer 130 comprises the film of 40 couples of 4.5nm Mo and 6nm Si.
In the second district 120, high EUV reflectivity (HEUVR) multilayer 135 is formed above LTEM layer 102.HEUVR multilayer 135 comprises multiple film pair, such as molybdenum-silicon (Mo/Si) film to (such as, each film centering to be positioned on silicon layer or under molybdenum layer).Alternatively, HEUVR multilayer 135 can comprise molybdenum-beryllium (Mo/Be) film pair, or at any material of EUV wavelength place high reflection to may be used for HEUVR multilayer 135.The thickness of each layer of HEUVR multilayer 135 depend on EUV wavelength and incident angle and by adjust to reach the EUV light of each reflected at interfaces maximum constructive interference and minimize the absorption of HEUVR multilayer 135 pairs of EUV light.HEUVR multilayer 135 can be selected thus make it provide high reflectance to the emission types/wavelength selected.Typical film is 5-60 to quantity, but any amount of film is to being possible.HEUVR multilayer 135 reaches more than at least 0.2 reflectance usually.In one embodiment, HEUVR multilayer 135 comprises 40 pairs of Mo/Si layers.Each Mo/Si film is to the thickness with about 7nm, and gross thickness is 280nm.In this case, the reflectivity of about 70% is achieved.In one embodiment, HEUVR multilayer 135 is configured to the film of 40 couples of 3nm Mo and 4nm Si.In one embodiment, the second district 120 is around the first district 110.In another embodiment, the second district 120 is in the edge of mask.By means of high EUV reflectivity, the second district 120 can for Alignment Process provides enough intensities of reflected light in EUV lithography technique.
In one embodiment, in the first district 110 and the second district 120, LEUVR multilayer 130 is formed above LTEM layer 102.Then, in the second district 120, LEUVR multilayer 130 is removed by suitable technique, such as patterning and etch process.Then in the second district 120, HEUVR multilayer 135 is formed by suitable deposition technique.In another embodiment, in the first district 110 and the second district 120, above LTEM layer 102, LEUVR multilayer 130 is formed.Then in the second district 120, above LEUVR multilayer 130, HEUVR multilayer 135 is formed by suitable deposition technique.Therefore, by making LEUVR multilayer 130 as making HEUVR multilayer 135 form the final multilayer in the second district 120 as its top bottom it.In this embodiment, HEUVR multilayer 135 comprises the right Mo/Si layer of 5-10.Each Mo/Si film is to the thickness with about 7nm.
Mask substrate 100 can also be included in the overlayer 140 of setting on LEUVR multilayer 130 and HEUVR multilayer 135 in case oxidation.In one embodiment, overlayer 140 comprises ruthenium (Ru), the Ru compound of such as RuB, RuSi, chromium (Cr), Cr oxide and Cr nitride.Overlayer 140 has the thickness of about 2.5nm.Alternatively, in one embodiment, overlayer 140 is not formed above HEUVR multilayer 135 above LEUVR multilayer 130.
Mask substrate 100 is also included in the absorption layer 150 formed on the overlayer 140 in the first district 110 and the second district 120.Absorption layer 150 comprises multiple film layer, and every tunic comprises chromium, chromium oxide, chromium nitride, titanium, titanium dioxide, titanium nitride, tantalum, tantalum oxide, tantalum nitride, nitrogen tantalum oxide, boron nitride tantalum, boron oxide tantalum, nitrogen boron oxide tantalum, aluminium, Solder for Al-Cu Joint Welding, aluminium oxide, silver, silver oxide, palladium, ruthenium, molybdenum, other suitable materials or the above potpourri of some.In one embodiment, absorption layer 150 comprises the boron nitride tantalum (TaBN) of 70nm.In another embodiment, absorption layer 150 comprises the boron nitride tantalum (TaBN) of 56nm and the boron oxide tantalum (TaBO) at the 14nm of TaBN layer disposed thereon.
One deck or multilayer 104,130,135,140 and 150 can be formed by various method, comprise physical vapor deposition (PVD) technique of such as evaporation and DC magnetron sputtering, the depositing process of such as electroless-plating or plating, such as chemical vapor deposition (CVD) technique of atmospheric pressure CVD (APCVD), low pressure chemical vapor deposition (LPCVD), plasma enhanced CVD (PECVD) or high-density plasma CVD (HDP CVD), ion beam depositing, spin coating, metal organic decomposition (MOD) and/or other methods well known in the art.
With reference to Fig. 3, patterning absorption layer 150 has low EUV reflectivity (LEUVR) mask 200 of the first subprovince 210 and the second subprovince 220 to be formed in the first district 110.In the first subprovince 210, retain absorption layer 150, and in the second subprovince 220, it is removed.In some instances, the first subprovince 210 is called uptake zone and the second subprovince 220 is called echo area.Can by patterning and etch process patterning absorption layer 150.Etch process can comprise dry type (plasma) etching, Wet-type etching and/or other engraving methods.Such as, dry etch process can use fluoro-gas (such as, CF 4, SF 6, CH 2f 2, CHF 3, and/or C 2f 6), chlorine-containing gas (such as, Cl 2, CHCl 3, CCl 4and/or BCl 3), bromine-containing gas (such as, HBr and/or CHBR 3), containing iodine gas, other suitable gases and/or plasma and/or their combination.Optional Patternized technique comprises maskless lithography, electron beam writes, directly write and/or ion beam writes.
With reference to Fig. 4, except it has high EUV reflectivity (HEUVR) multilayer 430 be positioned at above whole LTEM layer 102, form EUV mask 400 similarly with the LEUVR mask 200 discussed in figs. 2 and 3 above in many aspects.In one embodiment, HEUVR multilayer 430 is identical with HEUVR multilayer 135.EUV mask 400 can be included in the overlayer 440 of HEUV multilayer 430 disposed thereon.EUV mask 400 has the absorption layer 450 of patterning to limit Liang Ge district, uptake zone 410 and echo area 420.In uptake zone 410, retain absorption layer 450, and in echo area 420, it is removed.In one embodiment, the absorption layer 450 of patterning has the pattern identical with the absorption layer 150 of one of them patterning in LEUVR mask 200.
LEUVR mask 200 and EUV mask 400 can also in conjunction with other resolution enhance technology, such as optical near-correction (OPC).LEUVR mask 200 and EUV mask 400 can also experience the defect repair technique that defects on mask repair system carries out.Defects on mask repair system is suitable system, such as electron beam repair system and/or focused ion beam (FIB) repair system.
Fig. 5 is the process flow diagram of the method 500 of the evaluation DUV credit influence of light built according to aspects of the present invention.Fig. 6 A and 6B is the schematic plan of each stage pattern target 600 in method 500.
Method 500 starts from step 502, provides and has an EUV reflectivity r 1eUV mask 400 and there is the 2nd EUV reflectivity r 2lEUVR mask 200.In this example, EUV mask 400 and LEUVR mask 200 have identical absorption pattern.
With reference to Fig. 5 and 6A, method 500 continues to step 504, and EUV scanner utilizes EUV mask 400 pairs of substrates 600 to implement the first exposure technology.In the present embodiment, EUV scanner uses the EUV radiation of carrying OOB radiation.First exposure technology starts from the first district 601 in the substrate 600 covered by photoresist layer, then implements the second exposure technology at the second place of district 602, then implements the 3rd exposure technology etc. at the 3rd place of district 603.In the present embodiment, the first exposure technology is carried out according to the first exposure dose matrix.Configure the first exposure dose matrix thus make by EUV mask 400, exposure dose E 11for exposing the first district 601, equal E 11the exposure dose E of – Δ 12for exposing second district 602 (Δ=r here 2/ r 1× E 11); Equal E 11the exposure dose E of-2 Δs 13for exposing the 3rd district 603 etc.In a word, exposure dose E 1Nequal E 11– (N-1) Δ is to expose N district 60N.
In one embodiment, E 11it is the exposure dose (Eop) of the optimization for EUV mask 400.Eop can determine based on exposure dose, and this exposure dose is used for the pattern of EUV mask 400 in corresponding single exposure technology, reaches preassignment target size on substrate 600.Eop can according to the change of pattern density of EUV mask 400.Therefore, E 12equal Eop – Δ, E 13equal Eop-2 Δ ... ..E 1Nequal Eop – (N-1) Δ.
By means of an EUV reflectivity r of EUV mask 400 1, the exposure dose E that the region 60N of substrate 600 receives 1Nabout r 1× E 11– r 2(N-1) E 11.When exposure dose has EUV dosage and OOB credit light dosage, E 1Nabout r 1× E 11EUV– r 2(N-1) E 11EUVadd E 11OOB– (N-1) (r 2/ r 1) E 11OOB.E 11EUVrepresent E 11eUV dose fraction and E 11OOBrepresent E 11oOB to shine light dosage part.In the present embodiment, OOB credit light dosage E is considered 11DUVsubstantially the EUV dosage E in EUV scanner is less than 11EUV, and r 2substantially r is less than 1, can reasonably estimation region 60N receive exposure dose E 1Nclose to r 1× E 11EUV– r 2(N-1) E 11EUVadd E 11OOB.As an example, when exposure dose has EUV dosage and DUV credit light dosage, region 601 receives r 1× E 11EUVadd E 11OOBexposure dose; And region 602 receives r 1× E 11EUV– r 2× E 11EUVadd E 11OOBexposure dose; Region 603 receives E 11EUV– 2r 2× E 11EUVadd E 11OOBexposure dose; ..., and region 60N receives r 1× E 11EUV– r 2(N-1) E 11EUVadd E 11OOBexposure dose.
With reference to Fig. 5 and 6B, method 500 proceeds to step 506, utilizes LEUVR mask 200 pairs of substrates 600 to implement the second exposure by the identical EUV scanner with identical radiation.In the present embodiment, the second exposure technology is carried out according to the second exposure dose matrix.Second exposure dose matrix configuration being become to make through LEUVR mask 200, zero exposure dose for exposing the first district 601, equaling E 11exposure dose E 22for exposing the second district 602; Equal 2E 11exposure dose E 23for exposing the 3rd district 603 ..., and equal (N-1) E 11exposure dose E 2Nfor exposing N district 60N.
By means of the 2nd EUV reflectivity r of LEUVR mask 200 2, the exposure dose that N district 60N receives is close to r 2× (N-1) E 11EUV(N-1) E 11OOB.As an example, district 601 receives zero-dose; District 602 receives r 2× E 11EUVand E 11DUVexposure dose; District 603 receives 2r 2× E 11EUVand 2E 11DUVexposure dose; , district 60N receives r 2(N-1) E 11EUV(N-1) E 11DUVexposure dose.In the present embodiment, r is considered 2substantially little, can reasonably zone of estimate 60N receive exposure dose close to r 2(N-1) E 11EUVadd (N-1) E 11OOB.
Therefore, after the first and second exposure technologys, the total exposure dosage E of each district reception of substrate 600 tto shine close to the EUV dosage that receives in these two exposures respectively by two masks and OOB the summation of light dosage.Consider that OOB light dosage of shining is less than EUV dosage in EUV scanner and r substantially 2substantially r is less than 1, can reasonably zone of estimate 601 receive E t1close to r 1× E 11EUV+ E 11OOB; The ET that district 602 receives 2close to r 1× E11 eUV+ 2E 11OOB; The E that district 603 receives t3close to r 1× E 11EUV+ 3E 11OOB; The E that district 60N receives tNclose to r 1× E 11EUV+ N × E 11OOB.Such as, when exposure dose has EUV dosage and DUV credit light dosage, the E that district 60N receives tNclose to r 1× E 11EUV+ N × E 11DUV.In other words, each district in substrate 600 receives substantially identical EUV exposure dose r 1× E 11EUV, and different OOB credit light dosage N × E 11OOB.
With reference to Fig. 5, method 500 is by proceeding to step 508 for each district of substrate 600 obtains critical dimension (CD) data.After enforcement first and second exposure technology, developing process is implemented to the photoresist layer of substrate 600.During developing process, developing solution is used to photoresist layer.In instances, developing solution is aqueous slkali, such as Tetramethylammonium hydroxide (TMAH).Depend on anticorrosive additive material, developing solution removes exposure or the unexposed portion of photoresist layer.Such as, photoresist layer comprises positive resist agent material, and therefore developing process is removed the exposed portion of (dissolving) photoresist layer and retained the unexposed portion of the photoresist layer above substrate 600.Alternatively, when photoresist layer comprises negative resist material, developing process is removed the unexposed portion of (dissolving) photoresist layer and is retained the exposed portion of the photoresist layer above substrate 600.Developing technique, such as deionization (DI) water rinses.Developing technique can remove residual particles.
Implement CD to measure with the CD obtaining the first district 601 1, the CD in the second district 602 2, the CD in the 3rd district 603 3..., the CD of N district 60N n.The each CD of any suitable technique study can be passed through nwith corresponding total exposure dosage E tbetween relation with evaluate EUV scanner produce the DUV to EUV mask 400 (there is its mask arrangement and pattern density) shine influence of light.As an example, total exposure dosage E is utilized tas its X-axis and CD as its Y-axis formed CD to total exposure dosage E tchart.Also CD can be obtained to total exposure dosage E from chart ttrendline.As shown in Figure 7, the substantially the same and total exposure dosage E of the EUV dosage received due to each district in substrate 600 tmainly represent the change of DUV credit light, therefore Y-axis intercept and CD 1between difference be directly proportional to DUV level.This can utilize the software stored in storer implement on computers and performed by processor.
Can before method 500, when in and after other steps are provided, and can replace for other embodiments of method 500, delete or mobile some steps described.
Based on more than, the invention provides EUV lithography technique and to shine influence of light with the DUV evaluated in the EUV mask that exposed by EUV scanner.But this technique uses the mask pair with identical absorption layer pattern different EUV reflectivity.This mask is to having low EUV reflectivity mask and EUV mask.Low EUV reflectivity mask has high EUV reflectivity district (i.e. the edge of mask).This technique also uses two exposure dose matrixes to show the DUV credit influence of light of EUV scanner to EUV mask to the multiple exposure technologys utilizing mask right.
The present invention is directed to mask.In one embodiment, low extreme ultraviolet reflection (LEUVR) mask comprises low thermal expansion material (LTEM) layer, low extreme ultraviolet reflection (LEUVR) multilayer above the LTEM floor being arranged in the firstth district, is arranged in farsighted ultraviolet reflectance (HEUVR) multilayer of the top of the LTEM floor in the secondth district and is positioned at the absorption layer of the patterning above LEUVR multilayer and HEUVR multilayer.
The invention still further relates to etching system and technique.In one embodiment, deep ultraviolet lithography (EUVL) technique comprises the mask pair receiving and have identical patterns.This mask has an EUV reflectivity r to comprising 1the first extreme ultraviolet (EUV) mask and there is the 2nd EUV reflectivity r 2low EUV reflectivity mask.This technique also comprises the substrate receiving and be coated with photoresist layer, receives the EUV scanner being equipped with EUV radiation.This technique also comprises implements the first exposure technology to substrate, by utilizing EUV scanner and EUV mask.The first exposure technology is performed according to the first exposure dose matrix.This technique also comprises implements the second exposure technology to substrate, by utilizing EUV scanner and low EUV reflectivity mask.The second exposure technology is performed according to the second exposure dose matrix.
In another embodiment, mask comprises low thermal expansion material (LTEM) layer, is positioned at the first extreme ultraviolet reflectivity (EUVR) multilayer above LTEM layer.One EUVR multilayer has the EUV reflectivity being greater than 30%.This mask also comprises the second extreme ultraviolet reflectivity (EUVR) multilayer of the top of the part being positioned at an EUVR to form the 3rd EUVR multilayer.Therefore the 3rd EUVR multilayer has as the EUVR bottom it and the 2nd EUVR as its top.3rd EUVR multilayer has the EUV reflectivity being less than 2%.This mask also comprises the absorption layer of the patterning be positioned at above an EUVR multilayer and the 2nd EUVR multilayer.
Discuss the feature of some embodiments above, make the various aspects that the present invention may be better understood for those of ordinary skill in the art.It will be understood by those skilled in the art that to use easily and to design based on the present invention or to change other for the process and the structure that reach the object identical with introduced embodiment here and/or realize same advantage.Those of ordinary skill in the art also it should be appreciated that this equivalent constructions does not deviate from the spirit and scope of the present invention, and when not deviating from the spirit and scope of the present invention, can carry out multiple change, replacement and change.

Claims (10)

1. one kind low extreme ultraviolet reflection (LEUVR) mask comprises:
Low thermal expansion material (LTEM) layer;
Low extreme ultraviolet reflection (LEUVR) multilayer, above the firstth district being positioned at described LTEM floor;
Farsighted ultraviolet reflectance (HEUVR) multilayer, is positioned at the top in secondth district of described LTEM; And
The absorption layer of patterning, is positioned at the top of described LEUVR multilayer and described HEUVR multilayer.
2. mask according to claim 1, wherein, described LEUVR multilayer has the EUV reflectivity being less than 2%.
3. mask according to claim 1, wherein, described HEUVR multilayer has the EUV reflectivity being greater than 30%.
4. mask according to claim 1, wherein, described LEUVR multilayer comprises 40 films pair, and each film is to comprising the first film and the second film, and described first film comprises the silicon (Si) that the molybdenum (Mo) of about 1.5nm and described second film comprise about 2nm.
5. mask according to claim 1, wherein, described LEUVR multilayer comprises 40 films pair, and each film is to comprising the first film and the second film, and described first film comprises the silicon (Si) that the molybdenum (Mo) of about 4.5nm and described second film comprise about 6nm.
6. mask according to claim 1, wherein, described LEUVR multilayer comprises molybdenum silicon (MoSi) layer of about 280nm thickness.
7. mask according to claim 1, also comprises:
Overlayer, is positioned at the top of described LEUVR multilayer and described HEUVR multilayer.
8. mask according to claim 7, wherein, described overlayer comprises the ruthenium (Ru) of about 2.5nm thickness.
9. deep ultraviolet lithography (EUVL) technique comprises:
Reception has at least one figuratum mask pair altogether, and described mask is to comprising:
Extreme ultraviolet (EUV) mask, has an EUV reflectivity r 1; And
Low EUV reflectivity mask, has the 2nd EUV reflectivity r 2;
Receive the substrate being coated with photoresist layer;
Receive the EUV scanner being equipped with EUV radiation;
By utilizing described EUV scanner and described EUV mask to implement the first exposure technology to substrate, wherein, described first exposure technology is performed according to the first exposure dose matrix; And
By utilizing described EUV scanner and described low EUV reflectivity mask to implement the second exposure technology to substrate, wherein, described second exposure technology is performed according to the second exposure dose matrix.
10. one kind low extreme ultraviolet reflection (LEUVR) mask comprises:
Low thermal expansion material (LTEM) layer;
First extreme ultraviolet reflectivity (EUVR) multilayer, is positioned at above described LTEM layer, has the EUV reflectivity being greater than 30%;
Second extreme ultraviolet reflectivity (EUVR) multilayer, be positioned at the part top of a described EUVR to form the 3rd EUVR multilayer, described 3rd EUVR multilayer has as a described EUVR of described 3rd EUVR multi-layer bottom and described 2nd EUVR as described 3rd EUVR multilayer top, wherein, described 3rd EUVR multilayer has the EUV reflectivity being less than 2%; And
The absorption layer of patterning, is positioned at above a described EUVR multilayer and described 2nd EUVR multilayer.
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