CN104649665A - Microwave medium ceramic Li2La3NdV2O12 with near zero temperature coefficient of resonant frequency - Google Patents

Microwave medium ceramic Li2La3NdV2O12 with near zero temperature coefficient of resonant frequency Download PDF

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Publication number
CN104649665A
CN104649665A CN201410825798.3A CN201410825798A CN104649665A CN 104649665 A CN104649665 A CN 104649665A CN 201410825798 A CN201410825798 A CN 201410825798A CN 104649665 A CN104649665 A CN 104649665A
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microwave
hours
temperature coefficient
dielectric ceramic
low
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巩美露
苏聪学
覃杏柳
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Guilin University of Technology
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Guilin University of Technology
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Abstract

The invention discloses a low-temperature-sintered microwave medium ceramic Li2La3NdV2O12 with the near zero temperature coefficient of resonant frequency and high-quality factor and a method for preparing the low-temperature-sintered microwave medium ceramic Li2La3NdV2O12. The preparation method comprises the following steps: (1) measuring Li2CO3, La2O3, Nd2O3 and V2O5 raw powder with the purity of more than 99.9% (in weight percent) according to the composition formula of Li2La3NdV2O12; (2) mixing the raw materials obtained in the step (1) based on wet ball milling, drying and pre-burning for 6 hours in 800 DEG C atmosphere; and (3) granulating after an adhesive in the powder obtained in the step (2) is added, then press forming and finally sintering for 4 hours in the atmosphere of 870-930 DEG C. The ceramic prepared according to the method is well sintered at 870-930 DEG C, has the dielectric constant reaching 18.7-19.6, the quality factor value reaching up to 66000-83000 GHz and near zero temperature coefficient of resonant frequency.

Description

A kind of microwave-medium ceramics Li with near-zero resonance frequency temperature coefficient 2la 3ndV 2o 12
Technical field
The present invention relates to dielectric ceramic material, dielectric ceramic material particularly relating to Ceramic Resonator and the microwave device such as wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency ?little of as far as possible to ensure the thermostability that device has had, general requirement-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO 2microwave dielectric filter, but its temperature coefficient of resonance frequency τ ?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q × f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=20 ~ 35, Q=(1 ~ 2) × 10 4(under the GHz of f>=10), τ ?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material for base, its ε r=35 ~ 45, Q=(6 ~ 9) × 10 3(under f=3 ~-4GHz), τ ?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not directly and the low melting point metal such as Ag and Cu burn formation laminated ceramic capacitor altogether.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly adopt devitrified glass or glassceramic composites system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase substantially increases the dielectric loss of material.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase.
Can in the process of low fired microwave dielectric ceramic materials in exploration and development of new, the material systems such as the Li based compound that intrinsic sintering temperature is low, Bi based compound, tungstate architecture compound and tellurate architecture compound get the attention and research, but due to three performance index (ε of microwave dielectric ceramic rwith Qf and τ ?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet three performance requriementss and the single-phase microwave-medium ceramics of low temperature sintering is considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot application request.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, which greatly limits the development of low temperature co-fired technology and microwave multilayer device.Explore with exploitation can low-temperature sintering have simultaneously near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τ ?≤+10 ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the microwave dielectric ceramic of higher figure of merit.We are to composition Li 2la 3ndNb 2o 12, Li 2la 3ndTa 2o 12series compound carried out the research of microwave dielectric property, wherein find that their sintering temperature is higher than 950 DEG C, and their temperature factor is all bigger than normal and cannot can Temperature Firing Microwave Dielectric Ceramics as practical.
Summary of the invention
The object of this invention is to provide a kind of there is near-zero resonance frequency temperature coefficient and high quality factor can low-temperature sintered microwave dielectric ceramic material and preparation method thereof.
The chemical constitution of microwave dielectric ceramic material of the present invention is Li 2la 3ndV 2o 12.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3, La 2o 3, Nd 2o 3and V 2o 5starting powder press Li 2la 3ndV 2o 12composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 870 ~ 930 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
Advantage of the present invention: Li 2la 3ndV 2o 12ceramic sintering temperature is low, and raw materials cost is low; Specific inductivity reaches 18.7 ~ 19.6, the temperature factor τ of its resonant frequency ?nearly zero, temperature stability is good; Quality factor q f value, up to 66000-83000GHz, can be widely used in the manufacture of the microwave devices such as various dielectric resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, industrially have great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various dielectric resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:

Claims (1)

1. what have near-zero resonance frequency temperature coefficient and a high quality factor can a low-temperature sintered microwave dielectric ceramic, it is characterized in that the chemical constitution of described microwave dielectric ceramic is: Li 2la 3ndV 2o 12;
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) be 99.9%(weight percent by purity) more than Li 2cO 3, La 2o 3, Nd 2o 3and V 2o 5starting powder press Li 2la 3ndV 2o 12composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 800 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 870 ~ 930 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and polyvinyl alcohol addition accounts for 3% of powder total mass.
CN201410825798.3A 2014-12-28 2014-12-28 Microwave medium ceramic Li2La3NdV2O12 with near zero temperature coefficient of resonant frequency Pending CN104649665A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105272243A (en) * 2015-10-18 2016-01-27 桂林理工大学 Temperature-stable type microwave dielectric ceramic LiNiPrV2O8 having ultralow dielectric constant and capable of being sintered at low temperature

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1524792A (en) * 2003-02-28 2004-09-01 新加坡纳米材料科技有限公司 Method for preparing crystalline state perovskite compounds powder
CN101081736A (en) * 2006-12-15 2007-12-05 重庆工学院 Niobium-based microwave dielectric ceramic with near-zero resonance frequency temperature coefficient and preparation method thereof
CN103011810A (en) * 2012-12-07 2013-04-03 桂林理工大学 Low-temperature sinterable lithium-containing garnet structure microwave dielectric ceramic Li2Ca2BiV3O12 and its preparation method
CN103193483A (en) * 2013-04-02 2013-07-10 桂林理工大学 Low-temperature sintering tungstate microwave dielectric ceramic Li3R3W2O12 and preparation method thereof
CN104058746A (en) * 2014-06-30 2014-09-24 桂林理工大学 Microwave dielectric ceramic LiNd2V3O11 allowing low-temperature sintering and preparation method thereof
CN104193336A (en) * 2014-08-29 2014-12-10 桂林电子科技大学 Low-sintering-temperature microwave dielectric ceramic material and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1524792A (en) * 2003-02-28 2004-09-01 新加坡纳米材料科技有限公司 Method for preparing crystalline state perovskite compounds powder
CN101081736A (en) * 2006-12-15 2007-12-05 重庆工学院 Niobium-based microwave dielectric ceramic with near-zero resonance frequency temperature coefficient and preparation method thereof
CN103011810A (en) * 2012-12-07 2013-04-03 桂林理工大学 Low-temperature sinterable lithium-containing garnet structure microwave dielectric ceramic Li2Ca2BiV3O12 and its preparation method
CN103193483A (en) * 2013-04-02 2013-07-10 桂林理工大学 Low-temperature sintering tungstate microwave dielectric ceramic Li3R3W2O12 and preparation method thereof
CN104058746A (en) * 2014-06-30 2014-09-24 桂林理工大学 Microwave dielectric ceramic LiNd2V3O11 allowing low-temperature sintering and preparation method thereof
CN104193336A (en) * 2014-08-29 2014-12-10 桂林电子科技大学 Low-sintering-temperature microwave dielectric ceramic material and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105272243A (en) * 2015-10-18 2016-01-27 桂林理工大学 Temperature-stable type microwave dielectric ceramic LiNiPrV2O8 having ultralow dielectric constant and capable of being sintered at low temperature

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