CN104638036B - High photoresponse near infrared photodetector - Google Patents
High photoresponse near infrared photodetector Download PDFInfo
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- CN104638036B CN104638036B CN201410229544.5A CN201410229544A CN104638036B CN 104638036 B CN104638036 B CN 104638036B CN 201410229544 A CN201410229544 A CN 201410229544A CN 104638036 B CN104638036 B CN 104638036B
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- 239000011669 selenium Substances 0.000 claims abstract description 32
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 31
- 238000000137 annealing Methods 0.000 claims abstract description 26
- OQRNKLRIQBVZHK-UHFFFAOYSA-N selanylideneantimony Chemical compound [Sb]=[Se] OQRNKLRIQBVZHK-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000012545 processing Methods 0.000 claims abstract description 7
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims 2
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 18
- 239000002994 raw material Substances 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 48
- 230000000052 comparative effect Effects 0.000 description 11
- 229910005542 GaSb Inorganic materials 0.000 description 6
- 238000002207 thermal evaporation Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013475 authorization Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- GNZJTRGEKSBAAS-UHFFFAOYSA-N selanylideneantimony;selenium Chemical compound [Se].[Sb]=[Se].[Sb]=[Se] GNZJTRGEKSBAAS-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
Abstract
A kind of high photoresponse near infrared photodetector, it is characterised in that：Concrete structure is transparent inert substrate/selenizing Sb film/electrode, and wherein selenizing Sb film is the selenizing Sb film of selenization after passing through；Selenization is after described：Selenizing Sb film is made annealing treatment in selenium atmosphere, wherein：The selenium steam partial pressure of the selenium atmosphere is 1~10000Pa, and annealing temperature is 150~400 DEG C, and processing time is 5~30min；Or one layer of selenium is deposited in antimony selenide film surface, then made annealing treatment again, wherein：The thickness of the selenium of deposition is 1~500nm, and annealing temperature is 150~400 DEG C, and annealing time is 10~60min.The abundant raw materials of the high photoresponse near infrared photodetector of the present invention, cheap, technique is simple, economical, workable, and has high sensitivity.
Description
Technical field
The invention belongs to semiconductor photoelectronic device technical field, and in particular to a kind of high photoresponse near infrared light electrical resistivity survey is surveyed
Device.
Background technology
Antimony selenide（Sb2Se3）Belong to V-VI race's banding compound semiconductor, there is good photoelectric respone and thermoelectricity to imitate
Should, it is that a kind of very promising film photovoltaic absorbs layer material, it has suitable 1~1.2eV of energy gap, big extinction system
Number（Shortwave absorptivity>105 cm-1）, raw material are nontoxic and rich reserves, but its application is not taken seriously but always.To current
Untill, there is not yet antimony selenide to be used for the report for preparing photodetector.
In recent years, with the development of optical communication technique, high response, high-quantum efficiency, high specific detecivity and Gao Xiang are prepared
Answer the near infrared photodetector of frequency bandwidth turns into the target that domestic and international researcher is pursued.The III- such as InGaAs/InP
Detective quantum efficiency height, the dark current of V races semi-conducting material preparation are small, but its expensive, heat conductivility and mechanical performance
It is poor to limit its application in optoelectronic integrated technology.In the data of literatures reported before this, it is understood that doping energy
The carrier concentration of semi-conducting material is significantly changed, particularly with transparent conductive film, incorporation impurity can make it have very high
Carrier concentration, so as to influence its energy gap, for example, Authorization Notice No. be CN 100541828C patent disclose one
Photodetector of the kind for 650nm fiber optic communications, it is the P of heavy doping+Superficial layer/P-type layer/low-doped N-Type epitaxial layer/heavily doped
Miscellaneous N+Substrate layer four-layer structure, obtained detector I-V characteristic is good, dark current is small, optical responsivity is high, but this method technique is relative
Complexity, and need strictly effectively control doping, severe reaction conditions, processing cost is higher, can industrialization degree it is low；Shen Qing Publication
Number it isCN103280484APatent disclose a kind of p-type graphene film/n-type Ge schottky junction near infrared lights
Electric explorer and preparation method thereof, Authorization Notice No. areCN101576413A kind of C GaAs bases InAs/GaSb superlattices of patent
1 to 3 micron waveband infrared photoelectric detector, the infrared photoelectric detector by GaAs substrates from bottom to top, GaAs cushions,
AlSb nucleating layers, GaSb bottom breakers, AlSb/GaSb superlattice layers, the upper cushions of GaSb, InAs/GaSb superlattice layers, GaSb
Cap rock and titanium alloy electrode are formed., but these method practical operations get up to run into the problem of many new, increase detector
The cost of production.
The doping concentration of the selenizing Sb film prepared using the various techniques in currently available technology is relatively low, only 1013~
1014 cm-3Left and right, so as to limit the raising of antimony selenide film photoelectric detector photoresponse.Application publication number is CN
103343323 A patent discloses a kind of CIGS thin-film preparation method, including is copper to the CIGS initialization layer
Indium gallium carries out selenizing and annealing, but the processing method, primarily to preparing CIGS thin-film, control CIGS is answered
The proportioning of miscellaneous quaternary compound, so as to improve the photoelectric transformation efficiency of the solar cell of CIGS thin-film, there is presently no
The photoresponse of antimony selenide film is improved by selenizing and then prepares selenizing Sb film near infrared light electricity with it was found that pertinent literature is related to
Detector.Therefore, a kind of abundant raw materials are sought, cheap, technique is simple, economical, workable, and has high sensitivity
Light-detecting device, be the major issue that the current field is urgently researched and solved.
The content of the invention
Part in view of the shortcomings of the prior art, it is an object of the invention to provide a kind of high photoresponse near infrared light electricity
Detector, it has abundant raw materials, cheap, and technique is simple, economical, workable, and has high sensitivity.
To achieve the above object, the technical solution adopted by the present invention is as follows：A kind of high photoresponse near infrared photodetector,
It is characterized in that：Concrete structure is transparent inert substrate/selenizing Sb film/electrode, and wherein selenizing Sb film is selenizing after warp
The selenizing Sb film of processing；
Selenization is after described：Selenizing Sb film is made annealing treatment in selenium atmosphere, wherein：The selenium atmosphere
Selenium steam partial pressure is 1~10000Pa, and annealing temperature is 150~400 DEG C, and processing time is 5~30min；
Or one layer of selenium is deposited in antimony selenide film surface, then made annealing treatment again, wherein：The thickness of the selenium of deposition is
1~500nm, annealing temperature are 150~400 DEG C, and annealing time is 10~60min.
Above-mentioned selenium atmosphere can be produced by thermal evaporation or other heating means, and transparent inert substrate is white glass or ceramics
Piece etc., the electrode are Au electrodes.
It is cheap because antimony selenide raw material are nontoxic and rich reserves, the selenizing of selenization after the present invention
Sb film, selenizing Sb film selenium room V can be reducedSe, increase selenium is in antimony position doping SeSb, so as to improve the doping of selenizing Sb film
Concentration simultaneously improves the lifting that back electrode contact reaches device performance, improves the photoresponse of antimony selenide film photoelectric detector, makes it
Cheap so as to obtain abundant raw materials with high sensitivity, technique is simple, economical, workable, and with height
The photodetector of sensitivity, the effect for improving open-circuit voltage can also be obtained by being applied on solar cell.With existing skill
Art is compared, and the inventive method has advantages below and progress：（1）New raw material approach is opened for photodetector；（2）This hair
The bright antimony selenide film equality prepared by rear selenization antimony selenide film light that is high, therefore being prepared using the inventive method
Electric explorer quality is high；（3）The inventive method while detector photoresponse is greatly improved, is not changed by rear selenization
Antimony selenide film surface appearance and internal structure, the change to energy gap is also smaller, it is somewhat broadened and have it is more suitable
Energy gap；（4）This method technical process is simple, and technological parameter is easily controlled, and easily accomplishes scale production, and energy consumption
Low, remarkable in economical benefits, the minority carrier life time of antimony selenide film photoelectric detector of the invention is higher, is not losing the feelings of responsiveness
Brightness electric current is significantly lifted under condition, and specific detecivity has also been lifted, and substantially increases the performance of detector, preferably should be had
Use prospect.
Brief description of the drawings
Fig. 1 be in the embodiment of the present invention 1 after in the selenizing Sb film of selenization and comparative example 1 without after selenization
Selenizing Sb film electric field scanning exterior view；
Fig. 2 be in the embodiment of the present invention 1 after in the selenizing Sb film of selenization and comparative example 1 without after selenization
Selenizing Sb film absorption curve；
Fig. 3 be in the embodiment of the present invention 1 after in the selenizing Sb film of selenization and comparative example 1 without selenization
The energy gap matched curve of selenizing Sb film；
Fig. 4 be in the embodiment of the present invention 1 after in the selenizing Sb film of selenization and comparative example 1 without selenization
The photoresponse curve of selenizing Sb film；
Fig. 5 be the embodiment of the present invention 1 of the embodiment of the present invention 1 after in the selenizing Sb film of selenization and comparative example 1 not
The X-ray diffraction curve of selenizing Sb film through selenization；
Fig. 6 is the antimony selenide film photoelectric detector that selenization obtains after selenizing Sb film in the embodiment of the present invention 1
Current-voltage is efficiency curve；
Fig. 7 is the electric field scanning surface pattern that antimony selenide film surface deposits one layer of selenium after annealing in the embodiment of the present invention 2；
Fig. 8 is the absorption curve of one layer of selenium after annealing of antimony selenide thin film deposition in the embodiment of the present invention 2；
Fig. 9 is the energy gap matched curve of one layer of selenium after annealing of antimony selenide thin film deposition in the embodiment of the present invention 2；
Figure 10 is the photoresponse curve of one layer of selenium after annealing of antimony selenide thin film deposition in the embodiment of the present invention 2；
Figure 11 is the antimony selenide film photoelectric detector that selenization obtains after selenizing Sb film in the embodiment of the present invention 2
Current-voltage is efficiency curve.
Embodiment
The process that specific embodiment illustrates to prepare high photoresponse near infrared photodetector is exemplified below, but the present invention is simultaneously
It is not limited to following embodiments.Rear selenization process conditions in following embodiments are that experiment is optimal, but the present invention's is upper
Stating content can be applied to improve near infrared photodetector photoresponse, only be illustrated below with preferable treatment conditions.
Embodiment 1
A kind of high photoresponse near infrared photodetector, concrete structure are transparent inert substrate/selenizing Sb film/electrode,
Wherein selenizing Sb film is obtained using rear selenization；
Its specific preparation process is as follows：
Step 1：Cleaning base plate：With deionized water, acetone, isopropanol, it is white that deionized water cleans transparent inert substrate successively
Each 16 minutes of glass, then dried up with nitrogen gun；
Step 2：Using thermal evaporation, the transparent inert substrate white glass surface deposits selenizing Sb film in step 1,
Source temperature is 330 DEG C, and substrate heating temperature is 290 DEG C, evaporation time 40min, and the selenizing Sb film of the deposition is thick
Spend for 500nm；
Step 3：Selenizing Sb film described in step 2 is made annealing treatment in selenium atmosphere, the selenium atmosphere is to pass through
Thermal evaporation produces, wherein：Source temperature is 200 DEG C, and substrate heating temperature is 250 DEG C, evaporation time 10min, described
The selenium steam partial pressure of selenium atmosphere is 100Pa, and annealing temperature is 150 DEG C, and the annealing time is 30min；
Step 4：Using thermal evaporation, the selenium layer surface deposits 50nm gold electrodes in step 3, wherein：Electrode is grown
15mm, electrode spacing 0.2mm.
Embodiment 2
A kind of high photoresponse near infrared photodetector, concrete structure are transparent inert substrate/selenizing Sb film/electrode,
Wherein selenizing Sb film is obtained using rear selenization；
Its specific preparation process is as follows：
Step 1：Cleaning base plate：Transparent inert substrate pottery is cleaned successively with deionized water, acetone, isopropanol, deionized water
Each 16 minutes of ceramics, then dried up with nitrogen gun；
Step 2：Using thermal evaporation, the transparent inert substrate potsherd surface deposits selenizing Sb film in step 1,
Source temperature is 330 DEG C, and substrate heating temperature is 290 DEG C, evaporation time 40min, and the selenizing Sb film of the deposition is thick
Spend for 500nm；
Step 3：Described antimony selenide film surface deposits one layer of selenium in step 2, and wherein source temperature is 200 DEG C,
Substrate heating temperature is 250 DEG C, evaporation time 10min, and the thickness of the selenium of the deposition is 500nm, then again by SEDIMENTARY SELENIUM
Selenizing Sb film afterwards is made annealing treatment, wherein：The annealing temperature is 400 DEG C, annealing time 60min；
Step 4：50nm gold electrodes are deposited using the selenium layer surface after the thermal evaporation in step 3 annealed processing,
Wherein：Electrode long 15mm, electrode spacing 0.2mm.
Comparative example
The difference of comparative example and embodiment 1 is：Without rear selenization, it is operated selenizing Sb film prepared by comparative example
To remove the step in embodiment 1（3）, other steps are identical.
The photodetector obtained to embodiment 1 and embodiment 2 and comparative example carries out performance test, test result respectively
As shown in table 1.
The performance comparision table of photodetector made from the embodiment of table 1 and comparative example difference
| Photoelectric detector performance parameter | Embodiment 1 | Embodiment 2 | Comparative example |
| Photoelectric current | 45nA | 38nA | 30nA |
| Dark current | 450nA | 410nA | 310nA |
| Responsiveness | 10 | 10 | 10 |
| Specific detecivity | 5.6*1010 | 4.6*1010 | 3.9*1010 |
As it can be seen from table 1 the method that photoresponse is improved using selenization selenizing Sb film after the present invention, obtained light
Electric explorer minority carrier life time is higher, and in the case where not losing responsiveness, brightness electric current is significantly lifted, and specific detecivity is also
Improve, therefore the quality of photodetector is improved, inventor has found, for the scope and condition in claim, light
The specific detecivity and brightness electric current of electric explorer also all improve.Therefore, visited using in the present invention by improving photoelectricity
Overall performance is greatly improved after surveying the rear selenization method of the photoresponse of device.
Obviously, those skilled in the art can carry out the structure of various changes and modification without departing from the present invention to the present invention
Think of and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (1)
- A kind of 1. high photoresponse near infrared photodetector, it is characterised in that：Selenizing after selenizing Sb film to crystallization is carried out Processing improves the p-type doping concentration of selenizing Sb film so as to obtaining high photoresponse near infrared photodetector；Concrete structure is Bright inert substrate/selenizing Sb film/electrode, wherein selenizing Sb film are the selenizing Sb film of selenization after passing through；Selenization is after described：Selenizing Sb film is made annealing treatment in selenium atmosphere, wherein：The selenium of the selenium atmosphere steams Qi leel pressure is 1~10000Pa, and annealing temperature is 150~400 DEG C, and processing time is 5~30min；Or one layer of selenium is deposited in antimony selenide film surface, then made annealing treatment again, wherein：The thickness of the selenium of deposition be 1~ 500nm, annealing temperature are 150~400 DEG C, and annealing time is 10~60min；The near infrared photodetector, its structure are inert substrate/selenizing Sb film/metal, are photoconduction type photodetection Device, and be Ohmic contact between selenizing Sb film and metal.
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| CN201410229544.5A CN104638036B (en) | 2014-05-28 | 2014-05-28 | High photoresponse near infrared photodetector |
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| CN201410229544.5A CN104638036B (en) | 2014-05-28 | 2014-05-28 | High photoresponse near infrared photodetector |
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| CN104638036A CN104638036A (en) | 2015-05-20 |
| CN104638036B true CN104638036B (en) | 2017-11-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416356A (en) * | 2019-07-10 | 2019-11-05 | 西安交通大学 | A kind of preparation method of antimony selenide thin-film solar cells |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105632771B (en) * | 2016-03-16 | 2018-03-06 | 三峡大学 | A kind of Sb2Se3Preparation method of the film to electrode material |
| CN106129143B (en) * | 2016-07-01 | 2017-09-01 | 武汉光电工业技术研究院有限公司 | A kind of high orientation selenizing Sb film and preparation method thereof |
| CN107275441A (en) * | 2017-06-20 | 2017-10-20 | 湖南商学院 | A kind of preparation method of photodetector |
| CN110061090A (en) * | 2019-04-30 | 2019-07-26 | 福建农林大学 | Photodetector and preparation method thereof based on single antimony selenide nano wire PN junction |
| CN113972292B (en) * | 2021-03-29 | 2024-03-19 | 南京大学 | InP-based band gap adjustable structure and photoelectric conversion device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101983254A (en) * | 2008-03-14 | 2011-03-02 | 朗姆研究公司 | Method for depositing a film onto a substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59132175A (en) * | 1983-01-18 | 1984-07-30 | Ricoh Co Ltd | Manufacture of light conducting material for near infrared rays |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101983254A (en) * | 2008-03-14 | 2011-03-02 | 朗姆研究公司 | Method for depositing a film onto a substrate |
Non-Patent Citations (1)
| Title |
|---|
| Structural and optical properties of amorphous and crystalline antimony sulfide thin-films;Matthieu Y. Versavel、Joel A. Haber;《Thin Solid Films》;20070327;第515卷;第7172页右栏第1段 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416356A (en) * | 2019-07-10 | 2019-11-05 | 西安交通大学 | A kind of preparation method of antimony selenide thin-film solar cells |
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