CN104617090A - Graphene-based pressure sensor and preparation method thereof - Google Patents
Graphene-based pressure sensor and preparation method thereof Download PDFInfo
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- CN104617090A CN104617090A CN201510023523.2A CN201510023523A CN104617090A CN 104617090 A CN104617090 A CN 104617090A CN 201510023523 A CN201510023523 A CN 201510023523A CN 104617090 A CN104617090 A CN 104617090A
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Abstract
The invention discloses a graphene-based pressure sensor; the pressure sensor from bottom to top is sequentially provided with a PVDF piezoelectric film, a first graphene layer, a boron nitride layer and a second graphene layer, the pressure sensor also has a first electrode and a second electrode. The preparation method thereof comprises the following steps: firstly transferring the graphene onto the PVDF piezoelectric film; then transferring the boron nitride onto the graphene layer; and then transferring the graphene onto the boron nitride; and finally making the electrodes on the upper and lower two layers of graphene. The pressure sensor utilizes the high light transmission and high conductivity properties of the graphene material in combination with the piezoelectric property of the PVDF piezoelectric film; the pressure sensor can work without an external power source; the pressure can be detected by the voltage or the electric current; meanwhile, the pressure sensor can be manufactured ultrathin and half-transparent; and the pressure sensor is also easy to be integrated and applied.
Description
Technical field
The present invention relates to a kind of pressure sensor and preparation method thereof, particularly a kind of Graphene/BN/PVDF piezoelectric membrane pressure sensor and preparation method thereof.
Background technology
Pressure sensor is the on-the-spot test device directly contacted with measured medium, the fields such as extensive use and electric power, oil, chemical industry and medical science.Along with the development of science and technology, transducer constantly updates, and wish that its accuracy is high, energy consumption is low and size little etc.
Since grapheme material 2004 first by stable preparing after, increasing research finds that grapheme material has excellent electricity, optical property, as high carrier mobility, high light transmittance, high Young's modulus etc., various field can be applied to.
Summary of the invention
The object of the present invention is to provide a kind of preparation technology simple and graphene-based pressure sensor that can realize self power generation and preparation method thereof.
Graphene-based piezoelectric transducer of the present invention, there are PVDF piezoelectric membrane, the first graphene layer, boron nitride layer and the second graphene layer from bottom to top successively, described piezoelectric transducer is also provided with the first electrode and the second electrode, first electrode is arranged on the first graphene layer, and the second electrode is arranged on the second graphene layer.
In technique scheme, the Graphene in the first described graphene layer and the second graphene layer is all generally 1 layer to 10 layers.
Boron nitride in described boron nitride layer is generally 1 layer to 50 layers.
The first described electrode and the second electrode can be all one or several the combination electrodes in gold, palladium, silver, titanium, chromium and nickel.
Prepare the method for above-mentioned graphene-based piezoelectric transducer, comprise the steps:
1) clean PVDF piezoelectric membrane and dry up;
2) Graphene is transferred on the PVDF piezoelectric membrane of step 1) gained, PVDF piezoelectric membrane obtains the first graphene layer;
3) boron nitride is transferred to step 2) on the first graphene layer of gained, and on the first graphene layer the area of reserved growth first electrode;
4) Graphene is transferred on step 3) gained boron nitride layer, boron nitride layer obtains the second graphene layer;
5) reserve area place at the first graphene layer and make the first electrode, the second graphene layer makes the second electrode.
The beneficial effect that the present invention has is: pressure sensor of the present invention utilizes high light transmittance and the high conductivity of grapheme material, and in conjunction with the piezoelectric properties of PVDF piezoelectric membrane, does not need additional power source just can work, can pass through voltage or current detecting pressure; Can accomplish ultra-thin and translucent simultaneously, be easy to Integrated predict model, preparation method's technique of the present invention is simple in addition, and cost is low, is convenient to promote.
Accompanying drawing explanation
Fig. 1 is the structural representation of graphene-based pressure sensor;
Fig. 2 is graphene-based pressure sensor test result.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be further described.
With reference to Fig. 1, graphene-based pressure sensor of the present invention, it has PVDF piezoelectric membrane 1, first graphene layer 2, boron nitride layer 3 and the second graphene layer 4 from bottom to top successively, described piezoelectric transducer is also provided with the first electrode 5 and the second electrode 6, first electrode 5 is arranged on the first graphene layer 2, and the second electrode 6 is arranged on the second graphene layer 4.
Embodiment 1:
1) plasma water, acetone and isopropyl alcohol is used to clean the thick PVDF piezoelectric membrane of 30um and dry up respectively;
2) 1 layer graphene is shifted on the PVDF piezoelectric membrane of step 1) gained;
3) 1 layer of boron nitride is shifted to step 2) on the graphene layer of gained, and on graphene layer, reserve the area of growth first electrode;
4) again 1 layer graphene is transferred on the boron nitride layer of step 3) gained;
5) in the reserved area place of lower floor's graphene layer and the graphene layer of the superiors, utilize thermal evaporation process depositing silver electrode respectively, obtain graphene-based pressure sensor.
Direct pressing gained pressure transducer devices, measures two interelectrode voltage or curent changes, thus the change of reaction pressure, the test result of the pressure sensor prepared by this example as shown in Figure 2, can be found out when pushed, electric current significant change.
Embodiment 2:
1) plasma water, acetone and isopropyl alcohol is used to clean the thick PVDF piezoelectric membrane of 100um and dry up respectively;
2) 10 layer graphenes are shifted on the PVDF piezoelectric membrane of step 1) gained;
3) 50 layers of boron nitride are transferred to step 2) on the graphene layer of gained, and on graphene layer the area of reserved growth first electrode;
4) again 10 layer graphenes are transferred on the boron nitride layer of step 3) gained;
5) in the reserved area place and the superiors' graphene layer of lower floor's graphene layer, utilize magnetron sputtering technique deposited gold electrode respectively, obtain graphene-based pressure sensor.
Embodiment 3:
1) plasma water, acetone and isopropyl alcohol is used to clean the thick PVDF piezoelectric membrane of 300um and dry up respectively;
2) transferase 45 layer graphene is on the PVDF piezoelectric membrane of step 1) gained;
3) transferase 12 0 layer of boron nitride is to step 2) on the graphene layer of gained, and on graphene layer the area of reserved growth first electrode;
4) again 10 layer graphenes are transferred on the boron nitride layer of step 3) gained;
5) graphene layer reserving area place and the superiors at lower floor's graphene layer utilizes thermal evaporation process titanium deposition palladium-silver combination electrode respectively, obtain graphene-based pressure sensor.
Embodiment 4:
1) plasma water, acetone and isopropyl alcohol is used to clean the thick PVDF piezoelectric membrane of 200um and dry up respectively;
2) transferase 12 layer graphene is on the PVDF piezoelectric membrane of step 1) gained;
3) 6 layers of boron nitride are shifted to step 2) on the graphene layer of gained, and on graphene layer, reserve the area of growth first electrode;
4) again 2 layer graphenes are transferred on the boron nitride layer of step 3) gained;
5) graphene layer reserving area place and the superiors at lower floor's graphene layer utilizes electron beam evaporation process nickel deposited electrode respectively, obtain graphene-based pressure sensor.
Claims (5)
1. a graphene-based piezoelectric transducer, it is characterized in that having PVDF piezoelectric membrane (1), the first graphene layer (2), boron nitride layer (3) and the second graphene layer (4) from bottom to top successively, described piezoelectric transducer is also provided with the first electrode (5) and the second electrode (6), first electrode (5) is arranged on the first graphene layer (2), and the second electrode (6) is arranged on the second graphene layer (4).
2. graphene-based piezoelectric transducer according to claim 1, is characterized in that the Graphene in described the first graphene layer (2) and the second graphene layer (4) is 1 layer to 10 layers.
3. graphene-based piezoelectric transducer according to claim 1, is characterized in that the boron nitride in described boron nitride layer (3) is 1 layer to 50 layers.
4. graphene-based piezoelectric transducer according to claim 1, is characterized in that described the first electrode (5) and the second electrode (6) are one or several the combination electrode in gold, palladium, silver, titanium, chromium and nickel.
5. the method for the graphene-based piezoelectric transducer of preparation as described in any one of claim 1-4, is characterized in that comprising the steps:
1) clean PVDF piezoelectric membrane and dry up;
2) Graphene is transferred on the PVDF piezoelectric membrane of step 1) gained, PVDF piezoelectric membrane obtains the first graphene layer;
3) boron nitride is transferred to step 2) on the first graphene layer of gained, and on the first graphene layer the area of reserved growth first electrode;
4) Graphene is transferred on step 3) gained boron nitride layer, then boron nitride layer obtains the second graphene layer;
5) reserve area place at the first graphene layer and make the first electrode, the second graphene layer makes the second electrode.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105203019A (en) * | 2015-10-19 | 2015-12-30 | 上海集成电路研发中心有限公司 | Flexible active pressure/strain sensor structure and manufacturing method thereof |
| CN105552211A (en) * | 2016-01-18 | 2016-05-04 | 辽宁广告职业学院 | Voice-control extruded power generation thin film and preparation method thereof |
| CN106052909A (en) * | 2016-07-14 | 2016-10-26 | 中北大学 | Novel no-cavity graphene high temperature pressure sensor |
| CN106168515A (en) * | 2015-05-18 | 2016-11-30 | 宝峰时尚国际控股有限公司 | A kind of pressure transducer and preparation method thereof |
| CN106370290A (en) * | 2016-08-23 | 2017-02-01 | 东华大学 | PVDF nanometer fiber/graphene/elastic fiber piezoelectric sensor and its preparation method |
| CN106382998A (en) * | 2016-09-30 | 2017-02-08 | 中国科学院重庆绿色智能技术研究院 | Flexible graphene composite material pressure sensor and preparation method thereof |
| CN107359235A (en) * | 2017-08-14 | 2017-11-17 | 中北大学 | A kind of graphene pressure sensor |
| CN107748025A (en) * | 2017-09-30 | 2018-03-02 | 中国人民解放军国防科技大学 | Graphene/hexagonal boron nitride heterostructure pressure sensor and preparation method thereof |
| CN107941385A (en) * | 2017-08-14 | 2018-04-20 | 中北大学 | A kind of pressure sensor based on graphene piezoresistance knot |
| CN110063721A (en) * | 2019-03-12 | 2019-07-30 | 南京信息工程大学 | Measure the intelligent shoe and sign measurement method, piezoelectric approach of human body physical sign information |
| CN110686809A (en) * | 2019-10-10 | 2020-01-14 | 南京大学 | Pressure sensor based on double-layer graphene and preparation method |
| CN111220314A (en) * | 2020-03-09 | 2020-06-02 | 苏州大学 | Preparation method of zero-power-consumption pressure sensor |
| CN111262544A (en) * | 2020-02-17 | 2020-06-09 | 无锡市好达电子有限公司 | Graphene surface acoustic wave filter structure and preparation method thereof |
| CN112165275A (en) * | 2020-08-26 | 2021-01-01 | 浙江大学 | Dynamic diode generator capable of working at extremely low temperature and preparation method thereof |
| CN113029403A (en) * | 2021-03-09 | 2021-06-25 | 歌尔微电子股份有限公司 | Pressure sensor, manufacturing method thereof and electronic equipment |
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| CN106168515A (en) * | 2015-05-18 | 2016-11-30 | 宝峰时尚国际控股有限公司 | A kind of pressure transducer and preparation method thereof |
| CN105203019B (en) * | 2015-10-19 | 2018-05-29 | 上海集成电路研发中心有限公司 | A kind of active pressure of flexibility/strain transducer structure and preparation method thereof |
| CN105203019A (en) * | 2015-10-19 | 2015-12-30 | 上海集成电路研发中心有限公司 | Flexible active pressure/strain sensor structure and manufacturing method thereof |
| CN105552211A (en) * | 2016-01-18 | 2016-05-04 | 辽宁广告职业学院 | Voice-control extruded power generation thin film and preparation method thereof |
| CN106052909A (en) * | 2016-07-14 | 2016-10-26 | 中北大学 | Novel no-cavity graphene high temperature pressure sensor |
| CN106052909B (en) * | 2016-07-14 | 2019-03-08 | 中北大学 | A kind of graphene high-temp pressure sensor of novel no chamber |
| CN106370290B (en) * | 2016-08-23 | 2019-02-26 | 东华大学 | A kind of PVDF nanofiber/graphene/elastomer piezoelectric transducer and preparation method thereof |
| CN106370290A (en) * | 2016-08-23 | 2017-02-01 | 东华大学 | PVDF nanometer fiber/graphene/elastic fiber piezoelectric sensor and its preparation method |
| CN106382998A (en) * | 2016-09-30 | 2017-02-08 | 中国科学院重庆绿色智能技术研究院 | Flexible graphene composite material pressure sensor and preparation method thereof |
| CN107359235B (en) * | 2017-08-14 | 2023-10-03 | 中北大学 | Graphene pressure sensor |
| CN107941385A (en) * | 2017-08-14 | 2018-04-20 | 中北大学 | A kind of pressure sensor based on graphene piezoresistance knot |
| CN107359235A (en) * | 2017-08-14 | 2017-11-17 | 中北大学 | A kind of graphene pressure sensor |
| CN107941385B (en) * | 2017-08-14 | 2023-12-08 | 中北大学 | Pressure sensor based on graphene piezoresistance junction |
| CN107748025A (en) * | 2017-09-30 | 2018-03-02 | 中国人民解放军国防科技大学 | Graphene/hexagonal boron nitride heterostructure pressure sensor and preparation method thereof |
| CN107748025B (en) * | 2017-09-30 | 2019-10-29 | 中国人民解放军国防科技大学 | Graphene/hexagonal boron nitride heterostructure pressure sensor and preparation method thereof |
| CN110063721A (en) * | 2019-03-12 | 2019-07-30 | 南京信息工程大学 | Measure the intelligent shoe and sign measurement method, piezoelectric approach of human body physical sign information |
| CN110063721B (en) * | 2019-03-12 | 2024-03-22 | 南京信息工程大学 | Intelligent shoe for measuring human body sign information, sign measuring method and piezoelectric method |
| CN110686809A (en) * | 2019-10-10 | 2020-01-14 | 南京大学 | Pressure sensor based on double-layer graphene and preparation method |
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