CN104611607A - Silicon brass manufacturing method - Google Patents
Silicon brass manufacturing method Download PDFInfo
- Publication number
- CN104611607A CN104611607A CN201410823398.9A CN201410823398A CN104611607A CN 104611607 A CN104611607 A CN 104611607A CN 201410823398 A CN201410823398 A CN 201410823398A CN 104611607 A CN104611607 A CN 104611607A
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- CN
- China
- Prior art keywords
- silicon brass
- silicon
- copper
- alloy
- add
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
Abstract
The invention discloses a silicon brass manufacturing method, and belongs to the field of nonferrous metals. The silicon brass manufacturing method comprises the following steps: (1), preparing components of silicon brass; (2), charging copper into a preheated crucible, and melting the copper in a micro-oxidation atmosphere; (3), adding phosphor copper for performing deoxidation treatment; (4), adding preheated foundry returns, and stirring; (5), after stirring, adding copper silicon alloy, and further stirring to completely dissolve the alloy; (6), heating to a temperature of 1120-1160 DEG C, stirring and adding Zn; (7), after the Zn is completely melted, heating to be boiling for degassing; (8), testing in front of a furnace, and if the alloy contains gas, degassing by using N2 for refining the alloy; (9) pouring. Due to the adoption of the silicon brass manufacturing method, the problem of relatively poor quality of the silicon brass caused by improper setting of charging and other operating processes in the conventional silicon brass manufacturing process is solved; the silicon brass manufacturing method has the advantages of simplicity, low cost and easiness in manufacturing.
Description
Technical field
The invention belongs to non-ferrous metal field, more particularly, relate to a kind of method for the manufacture of silicon brass.
Background technology
Copper and alloy thereof have excellent chemistry, physical and mechanical properties, solidity to corrosion in air, fresh water, seawater and non-oxidizable acids medium is good, thus Chang Zuowei functional materials and structured material, and being widely used in the fields such as aviation, shipbuilding, electrician, its consumption is only second to aluminium alloy in non-ferrous alloy material.
Silicon brass is a kind of on the basis of copper zinc alloy, adds silicon and the Albatra metal-formed.It all has higher solidity to corrosion in air and seawater, and the ability that stress corrosion resistant breaks is higher than general brass.But in the application process of silicon brass, often occur the problem that its quality is short of, mainly in the process of smelting, technique is unreasonable caused.
Summary of the invention
For existing silicon brass in the fabrication process, because the operating procedures such as charging arrange unreasonable, and the problem causing silicon brass second-rate, the invention provides a kind of manufacture method of silicon brass, by changing the span of control of its charging technique and temperature, make the smelting technology of silicon brass more reasonable, reach the object improving its quality.
For solving the problem, the present invention adopts following technical scheme.
A manufacture method for silicon brass, comprises the following steps:
(1) preparation of each component of silicon brass:
The mass percent of each component of silicon brass is: Si:4.8%, Zn:19%, all the other are Cu;
(2) copper is encased in the crucible of preheating, under the atmosphere of low-level oxidation, makes it melt;
(3) continue heating, when temperature reaches 1150-1250 DEG C, add phosphor-copper and carry out deoxidation treatment;
(4) add the foundry returns of preheating, and stir;
(5) add cupro silicon after stirring, and continue to stir, alloy is dissolved completely;
(6) be warming up to 1120-1160 DEG C, stir and add Zn;
(7) after Zn melts completely, degasification of seething with excitement is heated to;
(8) stokehold test, if alloy gassiness, uses N
2refinery by de-gassing;
(9) pour into a mould.
Preferably, in described step (3), when temperature reaches 1200 DEG C, add phosphor-copper and carry out deoxidation treatment.
Preferably, in described step (6), be warming up to 1150 DEG C, stir and add Zn.
Compared to prior art, beneficial effect of the present invention is:
(1) the present invention is by changing the span of control of its charging technique and temperature, makes the smelting technology of silicon brass more reasonable, improves its quality.
(2) the inventive method is simple, and cost is low, handling ease.
Embodiment
Describe the present invention below in conjunction with embodiment.
embodiment 1
A manufacture method for silicon brass, comprises the following steps:
(1) preparation of each component of silicon brass:
The mass percent of each component of silicon brass is: Si:4.8%, Zn:19%, all the other are Cu;
(2) copper is encased in the crucible of preheating, under the atmosphere of low-level oxidation, makes it melt;
(3) continue heating, when temperature reaches 1200 DEG C, add phosphor-copper and carry out deoxidation treatment;
(4) add the foundry returns of preheating, and stir;
(5) add cupro silicon after stirring, and continue to stir, alloy is dissolved completely;
(6) be warming up to 1150 DEG C, stir and add Zn;
(7) after Zn melts completely, degasification of seething with excitement is heated to;
(8) stokehold test, if alloy gassiness, uses N
2refinery by de-gassing;
(9) pour into a mould.
Claims (3)
1. a manufacture method for silicon brass, is characterized in that following steps:
(1) preparation of each component of silicon brass:
The mass percent of each component of silicon brass is: Si:4.8%, Zn:19%, all the other are Cu;
(2) copper is encased in the crucible of preheating, under the atmosphere of low-level oxidation, makes it melt;
(3) continue heating, when temperature reaches 1150-1250 DEG C, add phosphor-copper and carry out deoxidation treatment;
(4) add the foundry returns of preheating, and stir;
(5) add cupro silicon after stirring, and continue to stir, alloy is dissolved completely;
(6) be warming up to 1120-1160 DEG C, stir and add Zn;
(7) after Zn melts completely, degasification of seething with excitement is heated to;
(8) stokehold test, if alloy gassiness, uses N
2refinery by de-gassing;
(9) pour into a mould.
2. the manufacture method of a kind of silicon brass according to claim 1, is characterized in that, in described step (3), when temperature reaches 1200 DEG C, adds phosphor-copper and carries out deoxidation treatment.
3. the manufacture method of a kind of silicon brass according to claim 1, is characterized in that, in described step (6), is warming up to 1150 DEG C, stirs and add Zn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410823398.9A CN104611607A (en) | 2014-12-26 | 2014-12-26 | Silicon brass manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410823398.9A CN104611607A (en) | 2014-12-26 | 2014-12-26 | Silicon brass manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104611607A true CN104611607A (en) | 2015-05-13 |
Family
ID=53146251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410823398.9A Pending CN104611607A (en) | 2014-12-26 | 2014-12-26 | Silicon brass manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104611607A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318053A (en) * | 2021-12-15 | 2022-04-12 | 中船重工西安东仪科工集团有限公司 | Rapid melting method of common brass |
-
2014
- 2014-12-26 CN CN201410823398.9A patent/CN104611607A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| 吴树森等: "《有色金属熔炼入门与精通》", 31 May 2014, 机械工业出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318053A (en) * | 2021-12-15 | 2022-04-12 | 中船重工西安东仪科工集团有限公司 | Rapid melting method of common brass |
| CN114318053B (en) * | 2021-12-15 | 2022-10-18 | 中船重工西安东仪科工集团有限公司 | Rapid melting method of common brass |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: 241000, Wuhu economic and Technological Development Zone, Hengshan Road, No. 35, electronic Pioneer Park, room 605-606 Applicant after: WUHU MINTAI COPPER INDUSTRY CO., LTD. Address before: 241000 Anhui city of Wuhu province Jiujiang Economic Development Zone East Road No. 3 leap Applicant before: WUHU MINTAI COPPER INDUSTRY CO., LTD. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 241000 Yue Jiang Road 3, Jiujiang Economic Development Zone, Wuhu, Anhui Applicant after: WUHU MINTAI COPPER INDUSTRY CO., LTD. Address before: 241000 room 605-606, electronic Pioneer Park, Hengshan Road 35, Wuhu economic and Technological Development Zone, Anhui Applicant before: WUHU MINTAI COPPER INDUSTRY CO., LTD. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150513 |