CN104609865A - Preparation method of silicon nitride-based conductive ceramic and molding method of silicon nitride-based conductive ceramic cutting tool - Google Patents
Preparation method of silicon nitride-based conductive ceramic and molding method of silicon nitride-based conductive ceramic cutting tool Download PDFInfo
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Abstract
The invention relates to the technical field of ceramic preparation, and in particular relates to a preparation method of silicon nitride-based conductive ceramic and a molding method of a silicon nitride-based conductive ceramic cutting tool. A microstructure of the silicon nitride-based conductive ceramic can be effectively optimized by adding a certain amount of a sintering aid prepared from MO and a rare earth oxide, so that the toughness and the strength of the silicon nitride-based conductive ceramic are significantly improved; improvement of the electric conductivity of the silicon nitride-based conductive ceramic is facilitated by adding a certain amount of conductive phase; the silicon nitride-based conductive ceramic can be processed by an electric spark machining technique; the ceramic cutting tool prepared from the silicon nitride-based conductive ceramic is suitable for a PVD coating technology; in addition, the ceramic cutting tool also plays toughening and strengthening roles; the improvement of the overall performance of the silicon nitride-based conductive ceramic is facilitated by adding a certain amount of a metal phase binder; the cutting tool is fabricated from the silicon nitride-based conductive ceramic through the molding method; the cutting tool with a complicated shape can be prepared; and the silicon nitride-based conductive ceramic cutting tool with relatively excellent performance can be obtained.
Description
Technical field
The present invention relates to field of ceramic preparation technology, particularly relate to a kind of preparation method of nitride silicon based conductivity ceramics and the forming method of nitride silicon based conductivity ceramics cutter.
Background technology
Silicon nitride ceramics is as non-oxide insulative engineering ceramics, there is wear-resisting, anti-corrosion, high temperature resistant, the excellent properties such as oxidation-resistance, heat shock resistance and low-gravity, first silicon nitride ceramics is tried out in machining cutter field by General Corporation by the phase at the beginning of the eighties in last century, its appearance makes cutter material have surprising raising in high temperature resistant and hardness, making that a lot of processing temperature is high, the processing of the workpiece material that expends cutter becomes easy, is the once very large breakthrough of manufacture field.Current silicon nitride base ceramic cutting tool mainly contains pure Si
3n
4sintex, composite S i
3n
4sintex, Sialon sintex (Sialon), the toughness reinforcing Si of nanometer
3n
4sintex, crystal whisker toughened Si
3n
4these are several for sintex.It is adopt diamond wheel grinding method to carry out simple profile processing to the silicon nitride ceramics sintered that the method for processing forming of Silicon Nitride Ceramic Cutter mainly contains following two kinds: one, and cutting force is large, consumed energy is many, tooling cost is high, efficiency is low; Two is adopt the modes such as casting or isostatic pressing, powder is first shaped to silicon nitride cutting tool idiosome, then puts in high temperature stove and sinter, carry out the precision work such as plain grinding, grinding, chamfer angle and sharpening after coming out of the stove to it.For above-mentioned two kinds of working methods, the first working method limits the shaping of complicated shape silicon nitride cutting tool, tooling cost is higher, but do not limit the sintering preparation technology of nitride silicon based cutter material, nitride silicon based cutter material can prepare the more excellent nitride silicon based cutter of performance by the sintering processing of hot pressing or hot isostatic pressing.Although the second working method can prepare the cutter of complicated shape, propose certain requirement to the preparation technology of material, can only carry out atmosphere sintering or gas pressure sintering, material property can be subject to certain restrictions.
On the other hand, nearly decades, the success of coated cutting tool is promoted the use of, and the research of people to Cutting-Tool Coating Technology is all the more paid attention to, and Cutting-Tool Coating Technology is had significant progress.And show up prominently in fields such as difficult-to-machine materials along with sintex, the nearly more than ten years, each cutter company and research institution very interested in huge prospect Cutting-Tool Coating Technology being applied to sintex, and done a lot of research, but be mainly still applied on inserted tool at present, the working durability of cutter can be significantly improved.Although attempt there being people at the beginning of 21 century preparing coating by PVD technique on silicon nitride ceramics, due to the insulativity of silicon nitride ceramics, although there is a collection of academic article, production still cannot realize.Until before 1 year, German You Ji company adopts the PVD sputtering technology of innovation, and making on silicon nitride ceramics, apply PVD coating process becomes possibility.But their technique also has its defect, also have technology barrier to need to overcome, as cost is high, the bonding force of coating and matrix is not the problem such as very desirable.
Above-described each factor all limits promoting the use of of Silicon Nitride Ceramic Cutter, and therefore preparing a kind of Silicon Nitride Ceramic Cutter having excellent conductive performance and excellent mechanical performances concurrently and be very important, is also one of developing direction of following Silicon Nitride Ceramic Cutter.
Summary of the invention
The present invention is directed to that existing silicon nitride ceramics electric property is poor, fragility be large, difficult processing, and the method for processing forming existing defects of existing Silicon Nitride Ceramic Cutter and not enough problem, a kind of preparation method having the silicon nitride ceramics of excellent mechanical performances and good electrical performance concurrently is provided, and applies the forming method that this kind of silicon nitride ceramics makes cutter.The sintex applying this kind of silicon nitride ceramics making is suitable for PVD coating process.
For achieving the above object, the present invention by the following technical solutions.
A preparation method for nitride silicon based conductivity ceramics, comprises the following steps:
S1, by the Si of 50-88%vol
3n
4the sintering aid of the conductive phase of powder, 10-45%vol, the binding agent of 0-5%vol, 2-5%vol is admixed together, obtains mixing raw material.
Preferably, described sintering aid is made up of MO and rare earth oxide, and described MO is MgO, Al
2o
3, CaO and SiO
2in at least one.
Preferably, described conductive phase is TiN, TiC, TiC
1-xn
x, MoSi
2, TiB
2, ZrB
2, carbon nano fiber (CNFs), Graphene, any one in carbon nanotube (CNT); Described x is 0.3-0.7.
Preferably, described binding agent is at least one in Co, Mo, Ni, W, Ta and Ti.
S2, mixing raw material is scattered in organic solvent, obtains mixed slurry, then mixed slurry dried and cross 50-200 mesh sieve, obtaining mixed powder.
Preferably, after mixing raw material mixes with organic solvent, first ball milling 4-48h, then ultrasonic disperse 3-5min, obtains mixed slurry.Then, at mixed slurry being placed in 60-80 DEG C, evaporation removing majority of organic solvent, then dries mixed slurry and crosses 50-200 mesh sieve, obtaining mixed powder at 60-100 DEG C.
Preferably, in described mixed slurry, the volume percent of solid phase is 35-45%; Organic solvent is dehydrated alcohol.
S3, mixed powder is placed in mould, and under rare gas element or nitrogen or vacuum, and be incubated 0.5-3h at 1500-1900 DEG C, obtained nitride silicon based conductivity ceramics.
High temperature sintering in step S3 can adopt hot pressed sintering, gas pressure sintering, atmosphere sintering, HIP sintering, discharge plasma sintering or microwave sintering.Preferred, the condition of high temperature sintering is: the N of 1atm
2atmosphere, hot pressing pressure is 30MPa.And first make temperature from ambient rise to 1350-1500 DEG C and be incubated 1h with the heat-up rate of 15 DEG C/min, then continue be warming up to 1500-1825 DEG C and be incubated 2h with the heat-up rate of 5 DEG C/min.
A forming method for nitride silicon based conductivity ceramics cutter, comprises the following steps:
S1, employing electric discharging machining technique carry out roughing to above-described nitride silicon based conductivity ceramics, obtain cutter base substrate.
Preferably, electric discharging machining technique is adopted to carry out rough machined machined parameters to nitride silicon based conductivity ceramics and be: pulsed voltage 80-150V, working width 5-100 μ s, recurrent interval 10-125 μ s, processing electric current 0.5-30A, process velocity 0.25-10mm/min.Rough machined process redundancy is 0.25-1mm.
S2, with diamond wheel and/or cubic boron nitride abrasive wheel, precision work is carried out to cutter base substrate, obtain nitride silicon based conductivity ceramics cutter.
Compared with prior art, the invention has the beneficial effects as follows: the present invention is by adding a certain amount of sintering aid be made up of MO and rare earth oxide, effectively can optimize the microtexture of nitride silicon based conductivity ceramics, thus significantly improve toughness and the intensity of nitride silicon based conductivity ceramics.And add a certain amount of conductive phase, not only contribute to the electric conductivity improving nitride silicon based conductivity ceramics, make resistivity lower than 100 Ω cm, can realize using electric discharging machining technique to process nitride silicon based conductivity ceramics, and the sintex making the nitride silicon based conductivity ceramics of application this kind make is suitable for PVD coating process, also plays toughened and reinforced effect in addition to nitride silicon based conductivity ceramics.Add a certain amount of metallographic phase binding agent, contribute to the over-all properties improving nitride silicon based conductivity ceramics.Nitride silicon based conductivity ceramics of the present invention is used to make cutter, roughing is carried out due to electric discharging machining technique can be adopted, not only can prepare complex-shaped cutter, also significantly can reduce tooling cost, improve the efficiency that cutter is shaping, relax the restriction of the sintering process to Silicon Nitride Ceramic Cutter simultaneously, be conducive to obtaining the more excellent Silicon Nitride Ceramic Cutter of performance.
Accompanying drawing explanation
Fig. 1 is the structural representation of the nitride silicon based conductivity ceramics cutter in embodiment 24;
Fig. 2 is the XRD figure of the nitride silicon based conductivity ceramics in embodiment 24;
Fig. 3 is the SEM figure of the nitride silicon based conductivity ceramics in embodiment 24.
Embodiment
In order to more fully understand technology contents of the present invention, below in conjunction with specific embodiment, technical scheme of the present invention being described further and being illustrated.
Embodiment 1-23
The preparation method of nitride silicon based conductivity ceramics is as follows:
(1) prepare burden: the volume percent shown according to the form below 1 gets Si respectively
3n
4powder, conductive phase, binding agent and sintering aid, each component then by got is admixed together, obtains mixing raw material.
(2) mix: mixed with dehydrated alcohol by mixing raw material, the volume percent of solid phase is wherein 35%; After mixing, mixture is placed in planetary ball mill high speed (400r/min) ball milling 20h, then ultrasonic disperse mixture 4min; Obtain mixed slurry.Then, at mixed slurry being placed in 60 DEG C, rotary evaporation removes most dehydrated alcohol, is then dried by mixed slurry at 80 DEG C and crosses 100 mesh sieves, obtaining mixed powder.
(3) high temperature sintering
High temperature sintering mode one (embodiment 1-19, embodiment 22-23): mixed powder is placed in mould, at the N of 1atm
2under atmosphere, two step thermal-insulating methods are adopted to carry out hot pressing at 1800 DEG C, hot pressing pressure is 30MPa, soaking time is 2h, be specially: make temperature from ambient rise to 1500 DEG C and be incubated 1h with the heat-up rate of 15 DEG C/min, then continue to be warming up to 1800 DEG C and heat-insulation pressure keeping 2h with the heat-up rate of 5 DEG C/min.Obtained nitride silicon based conductivity ceramics.
High temperature sintering mode two (embodiment 20-21): mixed powder is placed in mould, at the N of 1atm
2under atmosphere, two step thermal-insulating methods are adopted to carry out hot pressing at 1500 DEG C, hot pressing pressure is 30MPa, soaking time is 2h, be specially: make temperature from ambient rise to 1350 DEG C and be incubated 1h with the heat-up rate of 15 DEG C/min, then continue to be warming up to 1500 DEG C and heat-insulation pressure keeping 2h with the heat-up rate of 5 DEG C/min.Obtained nitride silicon based conductivity ceramics.
The method that nitride silicon based conductivity ceramics cutter prepared by the nitride silicon based conductivity ceramics that application above-described embodiment obtains is as follows:
(4) adopt Wire-cut Electrical Discharge Machining technology to carry out roughing to nitride silicon based conductivity ceramics, obtain cutter base substrate.Machined parameters is: pulsed voltage 80V, working width 35 μ s, recurrent interval 30 μ s, processing electric current 10A, process velocity 5mm/min.Rough machined process redundancy is 0.5mm.
(5) adopt diamond wheel to carry out the precision work such as plain grinding, grinding, chamfer angle and sharpening successively to cutter base substrate, obtain nitride silicon based conductivity ceramics cutter.
Table 1 embodiment 1-23 prepares each component and the volume percent of nitride silicon based conductivity ceramics
Si in table 1
3n
4the purity of powder, conductive phase, binding agent and sintering aid is 99.99%, and particle diameter is all less than 1 μm; " X-Y " in table 1 represents that this component is made up of with arbitrary proportion, as " the MgO-Y in embodiment 1 X and Y two kinds of materials
2o
3, 5 " and refer to sintering aid simultaneously containing MgO and Y
2o
3, and MgO and Y
2o
3can be arbitrary proportion, only need total amount to meet 5%vol.The proportioning of each component in above-described embodiment has been fully dense volume ratio.
The nitride silicon based conductivity ceramics tool setting prepared by above-described embodiment 1-23, in lathe, is carried out the experiment of continuous cutting HT250 graphitic cast iron to it, is selected cutter wear of the tool flank width VB=0.3mm as tool failure standard, assessment conductivity ceramics Tool in Cutting performance.Select model to be SNGN120712 side's blade, select model to be CSSNL2525M1207 knife bar, its setting angle: tool cutting edge angle is 45 °, and anterior angle and relief angle are all-8 ° 30 '.Cutting data is selected to be: Vc=300m/min, f=0.1mm/r, ap=0.5mm.The working durability of nitride silicon based conductivity ceramics cutter is as shown in table 2 below.
The test result of nitride silicon based conductivity ceramics cutter prepared by table 2 embodiment 1-23
In table 2, after Ra refers to carry out roughing by electric discharging machining technique, the surfaceness of cutter base substrate; The cutter base substrate of embodiment 1-7,11-15,20-23 all reaches less than 1 μm through diamond wheel grinding and polishing rear surface quality (Ra).
Embodiment 24
The preparation method of nitride silicon based conductivity ceramics and nitride silicon based conductivity ceramics cutter is as follows:
(1) prepare burden: by volume per-cent gets the Si of 67%vol respectively
3n
4the TiC of powder, 30%vol
0.5n
0.5, 3%volMgO-Y
2o
3, then by admixed together for this three components, obtain mixing raw material.
(2) mix: mixed with dehydrated alcohol by mixing raw material, the volume percent of solid phase is wherein 35%; After mixing, mixture is placed in planetary ball mill high speed (400r/min) ball milling 20h, then 3min ultrasonic disperse is carried out to mixture; Obtain mixed slurry.Then, at mixed slurry being placed in 60 DEG C, rotary evaporation removes most of dehydrated alcohol, is then dried by mixed slurry at 80 DEG C and crosses 100 mesh sieves, obtaining mixed powder.
(3) high temperature sintering: mixed powder is placed in mould, at the N of 1atm
2under atmosphere, at 1800 DEG C, carry out hot pressing, hot pressing pressure is 30MPa, and soaking time is 1.5h, obtained nitride silicon based conductivity ceramics.
(4) adopt Wire-cut Electrical Discharge Machining technology to carry out roughing to nitride silicon based conductivity ceramics, obtain cutter base substrate.Machined parameters is: pulsed voltage 100V, working width 50 μ s, recurrent interval 35 μ s, processing electric current 5A, process velocity 2.5mm/min.Rough machined process redundancy is 0.5mm.
(5) adopt diamond wheel to carry out the precision work such as plain grinding, grinding, chamfer angle and sharpening successively to cutter base substrate, obtain nitride silicon based conductivity ceramics cutter, its structure as shown in Figure 1.
The nitride silicon based conductivity ceramics tool setting prepared by above-described embodiment 30, in lathe, is carried out the experiment of continuous cutting HT250 graphitic cast iron to it, is selected cutter wear of the tool flank width VB=0.3mm as tool failure standard, assessment conductivity ceramics Tool in Cutting performance.Select model to be SNGN120712 side's blade, select model to be CSSNL2525M1207 knife bar, its setting angle: tool cutting edge angle is 45 °, and anterior angle and relief angle are all-8 ° 30 '.Cutting data is selected to be: Vc=300m/min, f=0.1mm/r, ap=0.5mm.Carry out cutting ability assessment according to the method described above, the working durability can reach 5.5min.
After testing, the relative density of nitride silicon based conductivity ceramics cutter reaches 99.3%, and hardness is 16.6GPa, and fracture toughness property is 6.9MPa.m
1/2, flexural strength is 870Mpa, resistivity 6.1 × 10
-4Ω .cm, cutter base substrate is after electric discharging machining technique processing, and surfaceness is Ra=3.5um, and cutter base substrate reaches below 1um through diamond wheel grinding and polishing rear surface quality (Ra).As shown in Figure 2, its microstructure is as shown in the SEM figure of Fig. 3, and its complex phase stable components, conductive path is formed for the XRD figure spectrum of nitride silicon based conductivity ceramics.
Embodiment 25
The preparation method of nitride silicon based conductivity ceramics and nitride silicon based conductivity ceramics cutter is as follows:
(1) prepare burden: by volume per-cent gets the Si of 67.5%vol respectively
3n
4the TiC of powder, 27.5%vol
0.5n
0.5, 5%volMgO-Y
2o
3, then by admixed together for this three components, obtain mixing raw material.
(2) mix: mixed with dehydrated alcohol by mixing raw material, the volume percent of solid phase is wherein 35%; After mixing, mixture is placed in planetary ball mill high speed (400r/min) ball milling 20h, then 4.5min ultrasonic disperse is carried out to mixture; Obtain mixed slurry.Then, at mixed slurry being placed in 60 DEG C, rotary evaporation removes most of dehydrated alcohol, is then dried by mixed slurry at 80 DEG C and crosses 100 mesh sieves, obtaining mixed powder.
(3) high temperature sintering: mixed powder is placed in mould, at the N of 1atm
2under atmosphere, two step thermal-insulating methods are adopted to carry out hot pressing at 1825 DEG C, hot pressing pressure is 30MPa, soaking time is 2h, be specially: make temperature from ambient rise to 1450 DEG C and be incubated 1h with the heat-up rate of 15 DEG C/min, then continue to be warming up to 1825 DEG C and heat-insulation pressure keeping 2h with the heat-up rate of 5 DEG C/min.Obtained nitride silicon based conductivity ceramics.
(4) adopt Wire-cut Electrical Discharge Machining technology to carry out roughing to nitride silicon based conductivity ceramics, obtain cutter base substrate.Machined parameters is: pulsed voltage 100V, working width 35 μ s, recurrent interval 35 μ s, processing electric current 15A, process velocity 2mm/min.Rough machined process redundancy is 0.5mm.
(5) adopt diamond wheel to carry out the precision work such as plain grinding, grinding, chamfer angle and sharpening successively to cutter base substrate, obtain nitride silicon based conductivity ceramics cutter.
The nitride silicon based conductivity ceramics tool setting prepared by above-described embodiment 31, in lathe, is carried out the experiment of continuous cutting HT250 graphitic cast iron to it, is selected cutter wear of the tool flank width VB=0.3mm as tool failure standard, assessment conductivity ceramics Tool in Cutting performance.Select model to be SNGN120712 side's blade, select model to be CSSNL2525M1207 knife bar, its setting angle: tool cutting edge angle is 45 °, and anterior angle and relief angle are all-8 ° 30 '.Cutting data is selected to be: Vc=300m/min, f=0.1mm/r, ap=0.5mm.Carry out cutting ability assessment according to the method described above, the working durability can reach 5min.
After testing, the relative density of nitride silicon based conductivity ceramics cutter reaches 99.5%, and hardness is 16.8GPa, and fracture toughness property is 6.5MPa.m
1/2, flexural strength is 830Mpa, resistivity 83.3 × 10
-3Ω .cm, cutter base substrate is after electric discharging machining technique processing, and surfaceness is Ra=3.8um, uses diamond wheel to reach below 1um to cutter base substrate grinding and polishing rear surface quality (Ra).
In other embodiments, the MO in sintering aid can also be MgO, Al
2o
3, CaO and SiO
2in at least one; Rare-earth oxidation in sintering aid can be Yb
2o
3, Lu
2o
3, Sc
2o
3, Y
2o
3, La
2o
3, Ce
2o
3, Pr
2o
3, Nd
2o
3, Pm
2o
3, Sm
2o
3, Eu
2o
3, Gd
2o
3, Tb
2o
3, Dy
2o
3, Ho
2o
3, Er
2o
3and Tm
2o
3in at least one; Conductive phase can also be TiN, TiC, TiC
1-xn
x(x=0.3-0.7), MoSi
2, TiB
2, ZrB
2, carbon fiber, Graphene, any one in carbon nanotube; Binding agent can also be at least one in Co, Mo, Ni, W, Ta and Ti.
In other embodiments, solvent used in mixing step can also be other organic solvent, and the volume percent of solid phase in mixed slurry can also be 35-45%; Mixture can also be 4-48h in the time of ball mill ball milling, and the time of ultrasonic wave dispersion can be 3-5min; At mixed slurry also can be placed in 60-80 DEG C, evaporation removing majority of organic solvent, then dries mixed slurry and crosses 50-200 mesh sieve, obtaining mixed powder at 60-100 DEG C.In high temperature sintering step, the mode of high temperature sintering can be hot pressed sintering, gas pressure sintering, atmosphere sintering, HIP sintering, discharge plasma sintering or microwave sintering; Mixed powder in mould under rare gas element or nitrogen or vacuum, and can also be incubated 0.5-3h at 1500-1900 DEG C.Employing electric discharging machining technique is carried out rough machined machined parameters to nitride silicon based conductivity ceramics and can also is: pulsed voltage 80-150V, working width 5-100 μ s, recurrent interval 10-125 μ s, processing electric current 0.5-30A, process velocity 0.25-10mm/min; Rough machined process redundancy is 0.25-1mm.
The above only further illustrates technology contents of the present invention with embodiment, so that reader is easier to understand, but does not represent embodiments of the present invention and is only limitted to this, and any technology done according to the present invention extends or recreation, all by protection of the present invention.
Claims (10)
1. a preparation method for nitride silicon based conductivity ceramics, is characterized in that, comprises the following steps:
S1, by the Si of 50-88%vol
3n
4the sintering aid of the conductive phase of powder, 10-45%vol, the binding agent of 0-5%vol, 2-5%vol is admixed together, obtains mixing raw material;
Described sintering aid is made up of MO and rare earth oxide, and described MO is MgO, Al
2o
3, CaO and SiO
2in at least one;
S2, mixing raw material is scattered in organic solvent, obtains mixed slurry, then mixed slurry dried and cross 50-200 mesh sieve, obtaining mixed powder;
S3, mixed powder is placed in mould, and under rare gas element or nitrogen or vacuum, and be incubated 0.5-3h at 1500-1900 DEG C, obtained nitride silicon based conductivity ceramics.
2. the preparation method of a kind of nitride silicon based conductivity ceramics according to claim 1, it is characterized in that, described conductive phase is TiN, TiC, TiC
1-xn
x, MoSi
2, TiB
2, ZrB
2, carbon fiber, Graphene, any one in carbon nanotube; Described x is 0.3-0.7.
3. the preparation method of a kind of nitride silicon based conductivity ceramics according to claim 1, it is characterized in that, described binding agent is at least one in Co, Mo, Ni, W, Ta and Ti.
4. a kind of preparation method of nitride silicon based conductivity ceramics according to any one of claim 1-3, it is characterized in that, in step 2, after mixing raw material mixes with organic solvent, first ball milling 4-48h, then ultrasonic disperse 3-5min, obtains mixed slurry.
5. the preparation method of a kind of nitride silicon based conductivity ceramics according to claim 4, it is characterized in that, in step 2, evaporation removing majority of organic solvent at mixed slurry being placed in 60-80 DEG C, then at 60-100 DEG C, mixed slurry dried and cross 50-200 mesh sieve, obtaining mixed powder.
6. the preparation method of a kind of nitride silicon based conductivity ceramics according to claim 5, it is characterized in that, in step 2, in described mixed slurry, the volume percent of solid phase is 35-45%.
7. the preparation method of a kind of nitride silicon based conductivity ceramics according to claim 6, it is characterized in that, in step S3, first make temperature from ambient rise to 1350-1500 DEG C and be incubated 1h with the heat-up rate of 15 DEG C/min, then continue be warming up to 1500-1825 DEG C and be incubated 2h with the heat-up rate of 5 DEG C/min.
8. a forming method for nitride silicon based conductivity ceramics cutter, is characterized in that, comprise the following steps:
S1, employing electric discharging machining technique carry out roughing to nitride silicon based conductivity ceramics according to claim 1, obtain cutter base substrate;
S2, with diamond wheel and/or cubic boron nitride abrasive wheel, precision work is carried out to cutter base substrate, obtain nitride silicon based conductivity ceramics cutter.
9. the forming method of a kind of nitride silicon based conductivity ceramics cutter according to claim 8, it is characterized in that, in step S1, employing electric discharging machining technique is carried out rough machined machined parameters to nitride silicon based conductivity ceramics and is: pulsed voltage 80-150V, working width 5-100 μ s, recurrent interval 10-125 μ s, processing electric current 0.5-30A, process velocity 0.25-10mm/min.
10. the forming method of a kind of nitride silicon based conductivity ceramics cutter according to claim 9, it is characterized in that, in step S1, rough machined process redundancy is 0.25-1mm.
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